Marking position calibration method, device, equipment and medium

Abstract

The invention provides a marking position calibration method, device and equipment and a medium, and the method comprises the steps: carrying out the marking of a silicon wafer sample according to an initial marking position coordinate; acquiring an actual distance value between the mark code on the silicon wafer sample and the center of the silicon wafer sample; calculating a deviation correction value of the mark code according to the actual distance value and a preset distance value; and calibrating the initial marking position coordinate according to the deviation correction value to obtain a corrected marking position coordinate. According to the marking position calibration method and device, the equipment and the medium provided by the invention, the marking position of the silicon wafer can be calibrated, the problem of difficulty in code reading of subsequent equipment caused by deviation of the marking position is avoided, and the overall utilization rate of the silicon wafer is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a marking position calibration method, device, equipment and medium. Background Art

[0002] Silicon single crystals have become the basic material for manufacturing integrated circuits due to their good electron mobility and thermal conductivity as well as controllable doping characteristics. In silicon wafer production, specific information is usually engraved on the back of the silicon wafer by laser marking, so that the source and quality of the silicon wafer can be tracked, controlled and verified later.

[0003] The main process of the laser pulse marking (Hard Laser Mark, HLM) method includes: instantaneously generating high temperature in the designated marking area on the back of the silicon wafer, thereby causing the silicon wafer material to vaporize. At the same time, the melt accumulated in the action area will continue to absorb energy. When the temperature of the molten material rises and is higher than the vaporization temperature of the material surface, vaporization pressure will be generated, causing the melt to spray out, thereby forming pits on the material surface. Multiple pits are arranged in a regular pattern to form coding characters.

[0004] The accuracy of the marking position will directly affect the subsequent reading of the coded characters and the utilization rate of silicon wafer manufacturing devices. If the marking position deviates towards or away from the center, it will affect the subsequent process.

[0005] However, in the prior art, the marking position in the marking process is fixed, and the mechanical parts of the equipment are prone to fatigue after long-term operation. The marking position may shift, which greatly affects the code reading of subsequent equipment and affects the overall utilization rate of the silicon wafer. Summary of the invention

[0006] In order to solve at least one technical problem in the above prior art, the embodiments of the present disclosure provide a marking position calibration method, device, equipment and medium.

[0007] The technical solutions provided by the embodiments of the present disclosure are as follows:

[0008] In a first aspect, an embodiment of the present disclosure provides a marking position calibration method, which includes:

[0009] Marking is performed on the silicon wafer sample according to the initial marking position coordinates;

[0010] Obtaining an actual distance value between the marking code on the silicon wafer sample and the center of the silicon wafer sample;

[0011] Calculating a deviation correction value of the marking code according to the actual distance value and the preset distance value;

[0012] The initial marking position coordinates are calibrated according to the deviation correction value to obtain the corrected marking position coordinates.

[0013] Exemplarily, the obtaining of the actual distance value between the marking code on the silicon wafer sample and the center of the silicon wafer sample specifically includes:

[0014] Obtain an actual distance value B in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample, wherein the center of the silicon wafer sample is located on the longitudinal axis of the coordinate system of the initial marking position coordinates, the first direction and the longitudinal axis in the coordinate system are at an angle α, and the angle with the transverse axis is (90°-α), and the outer boundary is a side boundary of the marking code away from the center of the silicon wafer sample in the first direction.

[0015] Exemplarily, obtaining the actual distance value in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample specifically includes:

[0016] Measure the radius A, chamfer width C, and distance D between the outer boundary and the inner boundary of the chamfer of the silicon wafer sample in the first direction, wherein the inner boundary of the chamfer is a boundary on one side of the chamfer surface of the silicon wafer sample close to the center of the silicon wafer sample in the first direction;

[0017] The actual distance value B in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample is calculated according to the following formula: B=ACD.

[0018] Exemplarily, the calculating the deviation correction value of the marking code according to the actual distance value and the preset distance value specifically includes:

[0019] The deviation value △B between the outer boundary of the marking code on the silicon wafer sample and the center of the silicon wafer sample in the first direction is calculated according to the following formula: △B=B-B0, where B0 is the preset distance value;

[0020] The deviation correction value of the initial marking position coordinates is calculated according to the following formula:

[0021] ΔX=ΔB·sinα; ΔY=ΔB·cosα.

[0022] Exemplarily, the calibrating the initial marking position coordinates according to the deviation correction value to obtain the corrected marking position coordinates specifically includes:

[0023] The corrected marking position coordinates (X1, Y1) are calculated according to the following formula: X1=X0-ΔX, Y1=Y0-ΔY, wherein the initial marking position coordinates are (X0, Y0).

[0024] In a second aspect, the present disclosure also provides a marking position calibration device, including:

[0025] An acquisition module, used for acquiring an actual distance value between a marking code on a silicon wafer sample and a center of the silicon wafer sample;

[0026] A calculation module, used for calculating a deviation correction value of the marking code according to the actual distance value and the preset distance value;

[0027] The calibration module is used to calibrate the initial marking position coordinates according to the deviation correction value to obtain the corrected marking position coordinates.

[0028] Exemplarily, the acquisition module is specifically used for:

[0029] Obtain an actual distance value B in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample, wherein the center of the silicon wafer sample is located on the longitudinal axis of the coordinate system of the initial marking position coordinates, the first direction and the longitudinal axis in the coordinate system are at an angle α, and the angle with the transverse axis is (90°-α), and the outer boundary is a side boundary of the marking code away from the center of the silicon wafer sample in the first direction.

[0030] Exemplarily, the acquisition module is specifically used for:

[0031] Measure the radius A, chamfer width C, and distance D between the outer boundary and the inner boundary of the chamfer of the silicon wafer sample in the first direction, wherein the inner boundary of the chamfer is a boundary on one side of the chamfer surface of the silicon wafer sample close to the center of the silicon wafer sample in the first direction;

[0032] The actual distance value B between the preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample in the first direction is calculated according to the following formula: B=ACD;

[0033] The calculation module is specifically used for:

[0034] The deviation value △B between the outer boundary of the marking code on the silicon wafer sample and the center of the silicon wafer sample in the first direction is calculated according to the following formula: △B=B-B0, where B0 is the preset distance value;

[0035] The deviation correction value of the initial marking position coordinates is calculated according to the following formula:

[0036] ΔX=ΔB·sinα; ΔY=ΔB·cosα;

[0037] The calibration module is specifically used to calculate the corrected marking position coordinates (X1, Y1) according to the following formula: X1=X0-ΔX, Y1=Y0-ΔY, wherein the initial marking position coordinates are (X0, Y0).

[0038] In a third aspect, an embodiment of the present disclosure further provides a device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the computer program, the marking position calibration method as described above is implemented.

[0039] In a fourth aspect, an embodiment of the present disclosure further provides a readable storage medium having a program or instruction stored thereon, wherein the program or instruction, when executed by a processor, implements the steps in the marking position calibration method as described above.

[0040] The beneficial effects brought by the embodiments of the present disclosure are as follows:

[0041] In the marking position calibration method, device, equipment and medium provided by the embodiments of the present disclosure, the silicon wafer sample is first marked according to the initial marking position coordinates, so that a marking code is formed on the silicon wafer sample, and then the actual distance value between the marking code on the silicon wafer sample and the center of the silicon wafer sample is obtained, and the deviation correction value of the marking code is calculated according to the actual distance value and the preset distance value. The initial marking position coordinates are calibrated by the deviation correction value to obtain the corrected marking position coordinates. In this way, when the silicon wafer marking position deviates, the silicon wafer marking position can be calibrated, avoiding the problem of difficulty in subsequent equipment reading the code caused by the marking position offset, and improving the overall utilization rate of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 A schematic diagram showing a flow chart of a marking position calibration method provided in an embodiment of the present disclosure;

[0043] Figure 2 A schematic diagram showing the marking positions in a silicon wafer sample according to an embodiment of the present disclosure;

[0044] Figure 3 A schematic diagram showing the principle of calibrating the marking position in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0046] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0047] The features such as "parallel", "perpendicular", and "same" used in the embodiments of the present disclosure include the features such as "parallel", "perpendicular", and "same" in a strict sense, as well as the cases where "approximately parallel", "approximately perpendicular", "approximately the same", etc. include certain tolerances, taking into account the tolerances associated with the measurement of specific quantities (e.g., the limitations of the measurement system), and represent the acceptable deviation range for a specific value determined by ordinary technicians in the field. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the value.

[0048] In addition, in this document, unless otherwise defined, the terms "substantially", "substantially", "approximately" and "about" are used to describe and explain small changes. When used with an event or situation, these terms can cover situations where the event or situation occurs exactly, and can also cover situations where the event or situation occurs approximately. For example, when used with a numerical value, these terms can include a range of variation of less than or equal to 10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces being arranged along the same plane in the micrometer range, for example, arranged along the same plane within 40μm, 30μm, 20μm, 10μm or 1μm.

[0049] like Figure 1 As shown, the embodiment of the present disclosure provides a marking position calibration method, including:

[0050] Step S01, marking on the silicon wafer sample 100 according to the initial marking position coordinates;

[0051] Step S02, obtaining an actual distance value between the marking code 200 on the silicon wafer sample 100 and the center of the silicon wafer sample 100;

[0052] Step S03, calculating the deviation correction value of the marking code 200 according to the actual distance value and the preset distance value;

[0053] Step S04: calibrate the initial marking position coordinates according to the deviation correction value to obtain the corrected marking position coordinates.

[0054] In the above scheme, the silicon wafer sample 100 is first marked according to the initial marking position coordinates, so that the marking code 200 is formed on the silicon wafer sample 100, and then the actual distance value between the marking code 200 on the silicon wafer sample 100 and the center of the silicon wafer sample 100 is obtained, and the deviation correction value of the marking code 200 is calculated according to the actual distance value and the preset distance value. The initial marking position coordinates are calibrated by the deviation correction value to obtain the corrected marking position coordinates. In this way, when the silicon wafer marking position deviates, the silicon wafer marking position can be calibrated, avoiding the problem of difficulty in subsequent equipment reading caused by the deviation of the marking position, and improving the overall utilization rate of the silicon wafer.

[0055] In the above step S01, the silicon wafer can be marked by a laser marking device according to the preset initial marking position coordinates. Specifically, the laser parameters (such as laser power, frequency, pulse width, etc.) of the laser marking device can be set according to the preset marking content (i.e., target characters, such as text, patterns, etc.), and the laser beam can be positioned and focused so that the laser beam can irradiate the target area of ​​the silicon wafer (usually a preset position on the outer periphery of the back of the silicon wafer), and the laser beam is allowed to etch or mark the target area according to the preset marking content, so that part of the target area is sunken to form a character pit (i.e., the target character pit), and the character pit can visually present the preset marking code 200.

[0056] The marking code 200 may include but is not limited to an OCR (Optical Character Recognition) code and a Code code.

[0057] OCR is a technology used to identify and read character information printed on the surface of silicon wafers. Typically, OCR is used to read text information such as batch number, serial number, production date, etc. T7 Code is a specific barcode or QR code format, which is usually used for the identification and tracking of silicon wafers. T7 Code usually contains key information related to the silicon wafer 10, such as product type, production date, process parameters, etc.

[0058] The initial marking position coordinates may be parameters pre-set in the laser marking device. The marking position of the laser marking device may be determined based on the initial coordinate position information. The center of the silicon wafer sample 100 is located on the vertical axis of the coordinate system of the initial marking position coordinates. The actual coordinates of the marking code 200 in the coordinate system may be (X, Y), and the initial marking position coordinates are (X0, Y0).

[0059] See also Figure 2 As shown, a line extending along a first direction can be obtained by drawing a line from the center of the silicon wafer sample 100 to the center of the marking code 200, and the angle between the first direction and the longitudinal axis in the coordinate system is α, and the angle between the first direction and the horizontal axis is (90°-α). The outer boundary of the marking code 200 in the silicon wafer sample 100 is the boundary of the side of the marking code 200 away from the center of the silicon wafer sample 100 in the first direction, and the actual distance value between the outer boundary of the marking code 200 and the center of the silicon wafer sample 100 in the first direction is B.

[0060] In some embodiments, the marking position may be calibrated based on the actual distance value B. That is, the above step S02 specifically includes:

[0061] Step S021, obtain the actual distance value B in the first direction between the preset point in the outer boundary 210 of the marking code 200 in the silicon wafer sample 100 and the center of the silicon wafer sample 100, wherein the center O of the silicon wafer sample 100 is located on the longitudinal axis y of the coordinate system of the initial marking position coordinates, the first direction and the longitudinal axis y in the coordinate system The angle is α, and the angle with the horizontal axis x is (90°-α), the outer boundary 210 is a side boundary of the marking code 200 away from the center O of the silicon wafer sample 100 in the first direction, and the preset point may include but is not limited to the center O of the outer boundary 210.

[0062] Specifically, the above step S021 specifically includes:

[0063] Step S0211, measuring the radius A, chamfer width C, and the distance D between the outer boundary 210 and the chamfer inner boundary of the silicon wafer sample 100 in the first direction, wherein the chamfer inner boundary 110 is a side boundary of the chamfer surface of the silicon wafer sample 100 close to the center O of the silicon wafer sample 100 in the first direction;

[0064] Step S0212, calculate the actual distance value B in the first direction between the preset point in the outer boundary 210 of the marking code 200 in the silicon wafer sample 100 and the center O of the silicon wafer sample 100 according to the following formula: B=ACD.

[0065] Among them, the chamfering of the silicon wafer is involved in the processing of the silicon wafer. After the chamfering is completed, it is generally necessary to detect the chamfering morphology to determine whether it meets the chamfering processing standards. In this process, parameters such as the radius and chamfering surface width of the silicon wafer will be measured and obtained.

[0066] In the above step S0211, the radius A and chamfer surface width C of the silicon wafer sample 100 can be measured by measuring the radius and chamfer surface width data of the silicon wafer obtained during the chamfering morphology detection process during the chamfering processing of the silicon wafer. In this way, the parameters measured by the process equipment of the previous process can be directly used without the need for separate measurement.

[0067] In addition, in the above step S0211, the distance D between the outer boundary 210 and the chamfered inner boundary 110 of the silicon wafer sample 100 in the first direction can be measured by using a measuring tool such as a microscope after the marking is completed.

[0068] See also Figure 2 As shown, in the first direction, there is the following relationship: A=B+C+D. Therefore, based on the above formula, the actual distance value B=ACD can be obtained.

[0069] Of course, it is understandable that, in other embodiments, the actual distance value B may also be obtained by other means, such as directly measuring with a measuring tool.

[0070] In addition, in some exemplary embodiments, the above step S03 specifically includes:

[0071] Step S031, calculating the deviation value △B between the outer boundary 210 of the marking code 200 on the silicon wafer sample 100 and the center O of the silicon wafer sample 100 in the first direction according to the following formula: △B=B-B0, where B0 is the preset distance value;

[0072] Step S032, calculating the deviation correction value of the initial marking position coordinate according to the following formula: ΔX=ΔB·sinα; ΔY=ΔB·cosα.

[0073] For the above scheme, please see Figure 3 As shown, in the coordinate system of the initial marking position coordinate, the y-axis coordinate from the center O of the silicon wafer to the origin is Y, and the horizontal coordinate of the predetermined point of the outer boundary 210 can be X. According to the Pythagorean theorem, it can be obtained that: Y = B·sinα, X = B·cosα. Therefore, the deviation value △B between the outer boundary 210 of the marking code 200 on the silicon wafer sample 100 and the center O of the silicon wafer sample 100 in the first direction is calculated to be the difference between the actual distance value B and the preset distance value B0, and it can be obtained that ΔX = ΔB·sinα; ΔY = ΔB·cosα.

[0074] Here, ΔX is the deviation distance of the actual marking position coordinates relative to the initial marking position coordinates along the horizontal axis x direction, and ΔY is the deviation distance of the actual marking position coordinates relative to the initial marking position coordinates along the vertical axis y direction.

[0075] Exemplarily, the above step S04 specifically includes:

[0076] The corrected marking position coordinates (X1, Y1) are calculated according to the following formula: X1=X0-ΔX, Y1=Y0-ΔY, wherein the initial marking position coordinates are (X0, Y0).

[0077] It should be noted that, since the deviation value ΔB is the difference obtained by subtracting the preset distance value B0 from the actual distance value B, when B is greater than B0, ΔB is a positive value, and the corresponding ΔX and ΔY are both positive values, indicating that the actual marking position is larger than the target marking position in terms of both the horizontal and vertical coordinates of the actual marking position. Therefore, it is necessary to subtract ΔB from the horizontal and vertical coordinates of the marking position coordinates of the laser marking device, that is, to reduce the horizontal and vertical coordinates, to obtain the corrected marking position coordinates; conversely, when B is less than B0, ΔB is a negative value, and the corresponding ΔX and ΔY are both negative values, indicating that the actual marking position is smaller than the target marking position in terms of both the horizontal and vertical coordinates of the actual marking position. Therefore, it is necessary to subtract ΔB from the horizontal and vertical coordinates of the marking position coordinates of the laser marking device, that is, to increase the horizontal and vertical coordinates, to obtain the corrected marking position coordinates.

[0078] In addition, the present disclosure also provides a marking position calibration device, including:

[0079] An acquisition module, used for acquiring an actual distance value between the marking code 200 on the silicon wafer sample 100 and the center O of the silicon wafer sample 100;

[0080] A calculation module, used to calculate a deviation correction value of the marking code 200 according to the actual distance value and the preset distance value;

[0081] The calibration module is used to calibrate the initial marking position coordinates according to the deviation correction value to obtain the corrected marking position coordinates.

[0082] Exemplarily, the acquisition module is specifically used for:

[0083] Obtain an actual distance value B in the first direction between a preset point in the outer boundary 210 of the marking code 200 in the silicon wafer sample 100 and the center O of the silicon wafer sample 100, wherein the center O of the silicon wafer sample 100 is the origin of the coordinate system of the initial marking position coordinates, the first direction and the longitudinal axis y in the coordinate system are at an angle α, and the angle with the transverse axis x is (90°-α), and the outer boundary 210 is a side boundary of the marking code 200 away from the center O of the silicon wafer sample 100 in the first direction.

[0084] Exemplarily, the acquisition module is specifically used for:

[0085] Measure the radius A, chamfer width C, and distance D between the outer boundary 210 and the chamfer inner boundary 110 of the silicon wafer sample 100 in the first direction, wherein the chamfer inner boundary 110 is a boundary of the chamfer surface of the silicon wafer sample 100 close to the center O of the silicon wafer sample 100 in the first direction;

[0086] The actual distance value B between the preset point in the outer boundary 210 of the marking code 200 in the silicon wafer sample 100 and the center O of the silicon wafer sample 100 in the first direction is calculated according to the following formula: B=ACD;

[0087] The calculation module is specifically used for:

[0088] The deviation value △B between the outer boundary 210 of the marking code 200 on the silicon wafer sample 100 and the center O of the silicon wafer sample 100 in the first direction is calculated according to the following formula: △B=B-B0, where B0 is the preset distance value;

[0089] The deviation correction value of the initial marking position coordinates is calculated according to the following formula:

[0090] ΔX=ΔB·sinα; ΔY=ΔB·cosα;

[0091] The calibration module is specifically used to calculate the corrected marking position coordinates (X1, Y1) according to the following formula: X1=X0-ΔX, Y1=Y0-ΔY, wherein the initial marking position coordinates are (X0, Y0).

[0092] It should be noted here that the above-mentioned marking position calibration device provided in the embodiment of the present invention can implement all the method steps implemented in the above-mentioned marking position calibration method embodiment, and can achieve the same technical effect. The parts and beneficial effects that are the same as the method embodiment in this embodiment will not be described in detail here.

[0093] In addition, an embodiment of the present disclosure further provides a device, including a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the computer program, the marking position calibration method as described above is implemented.

[0094] It should be noted here that the above-mentioned device provided by the embodiment of the present invention can implement all the method steps implemented by the above-mentioned marking position calibration method embodiment, and can achieve the same technical effect. The parts and beneficial effects that are the same as the method embodiment in this embodiment will not be described in detail here.

[0095] In addition, an embodiment of the present disclosure further provides a readable storage medium on which a program or instruction is stored. When the program or instruction is executed by a processor, the steps in the marking position calibration method as described above are implemented.

[0096] A computer-readable storage medium according to an embodiment of the present invention stores a program or instruction thereon, and when the program or instruction is executed by a processor, the steps in the marking position calibration method described above are implemented, and the same technical effect can be achieved. To avoid repetition, it is not described here. The computer-readable storage medium is, for example, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0097] There are a few points to note:

[0098] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0099] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0100] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0101] The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A marking position calibration method, characterized in that: include: Marking is performed on the silicon wafer sample according to the initial marking position coordinates; Obtaining an actual distance value between the marking code on the silicon wafer sample and the center of the silicon wafer sample; Calculating a deviation correction value of the marking code according to the actual distance value and the preset distance value; The initial marking position coordinates are calibrated according to the deviation correction value to obtain the corrected marking position coordinates.

2. The marking position calibration method according to claim 1, characterized in that: The obtaining of the actual distance between the marking code on the silicon wafer sample and the center of the silicon wafer sample specifically includes: Obtain an actual distance value B in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample, wherein the center of the silicon wafer sample is located on the longitudinal axis of the coordinate system of the initial marking position coordinates, the first direction and the longitudinal axis in the coordinate system are at an angle α, and the angle with the transverse axis is (90°-α), and the outer boundary is a side boundary of the marking code away from the center of the silicon wafer sample in the first direction.

3. The marking position calibration method according to claim 2, characterized in that: The obtaining of the actual distance value in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample specifically includes: Measure the radius A, chamfer width C, and distance D between the outer boundary and the inner boundary of the chamfer of the silicon wafer sample in the first direction, wherein the inner boundary of the chamfer is a boundary on one side of the chamfer surface of the silicon wafer sample close to the center of the silicon wafer sample in the first direction; The actual distance value B in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample is calculated according to the following formula: B=ACD.

4. The marking position calibration method according to claim 2, characterized in that: The calculating the deviation correction value of the marking code according to the actual distance value and the preset distance value specifically includes: The deviation value △B between the outer boundary of the marking code on the silicon wafer sample and the center of the silicon wafer sample in the first direction is calculated according to the following formula: △B=B-B0, where B0 is the preset distance value; The deviation correction value of the initial marking position coordinates is calculated according to the following formula: ΔX=ΔB·sinα; ΔY=ΔB·cosα.

5. The marking position calibration method according to claim 4, characterized in that: The step of calibrating the initial marking position coordinates according to the deviation correction value to obtain the corrected marking position coordinates specifically includes: The corrected marking position coordinates (X1, Y1) are calculated according to the following formula: X1=X0-ΔX, Y1=Y0-ΔY, wherein the initial marking position coordinates are (X0, Y0).

6. A marking position calibration device, characterized in that: include: An acquisition module, used for acquiring an actual distance value between a marking code on a silicon wafer sample and a center of the silicon wafer sample; A calculation module, used for calculating a deviation correction value of the marking code according to the actual distance value and the preset distance value; The calibration module is used to calibrate the initial marking position coordinates according to the deviation correction value to obtain the corrected marking position coordinates.

7. The marking position calibration device according to claim 6, characterized in that: The acquisition module is specifically used for: Obtain an actual distance value B in the first direction between a preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample, wherein the center of the silicon wafer sample is located on the longitudinal axis of the coordinate system of the initial marking position coordinates, the first direction and the longitudinal axis in the coordinate system are at an angle α, and the angle with the transverse axis is (90°-α), and the outer boundary is a side boundary of the marking code away from the center of the silicon wafer sample in the first direction.

8. The marking position calibration device according to claim 7, characterized in that: The acquisition module is specifically used for: Measure the radius A, chamfer width C, and distance D between the outer boundary and the inner boundary of the chamfer of the silicon wafer sample in the first direction, wherein the inner boundary of the chamfer is a boundary on one side of the chamfer surface of the silicon wafer sample close to the center of the silicon wafer sample in the first direction; The actual distance value B between the preset point in the outer boundary of the marking code in the silicon wafer sample and the center of the silicon wafer sample in the first direction is calculated according to the following formula: B=ACD; The calculation module is specifically used for: The deviation value △B between the outer boundary of the marking code on the silicon wafer sample and the center of the silicon wafer sample in the first direction is calculated according to the following formula: △B=B-B0, where B0 is the preset distance value; The deviation correction value of the initial marking position coordinates is calculated according to the following formula: ΔX=ΔB·sinα; ΔY=ΔB·cosα; The calibration module is specifically used to calculate the corrected marking position coordinates (X1, Y1) according to the following formula: X1=X0-ΔX, Y1=Y0-ΔY, wherein the initial marking position coordinates are (X0, Y0).

9. A device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor; characterized in that: When the processor executes the computer program, the marking position calibration method according to any one of claims 1 to 5 is implemented.

10. A readable storage medium having a program or instruction stored thereon, characterized in that: When the program or instruction is executed by a processor, the steps in the marking position calibration method according to any one of claims 1 to 5 are implemented.

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