High-power compressor driving circuit, high-power compressor and control method of high-power compressor

Abstract

The invention discloses a high-power compressor driving circuit, a high-power compressor and a control method of the high-power compressor. The high-power compressor driving circuit comprises a controller, a three-phase half-bridge driving circuit, a three-phase half-bridge circuit and a direct current-direct current converter, the three-phase half-bridge driving circuit is connected with the controller; the three-phase half-bridge drive circuit is connected with the three-phase half-bridge circuit; the DC-DC converter is connected with the controller and the three-phase half-bridge drive circuit. Wherein the three-phase half-bridge circuit comprises 12 insulated gate bipolar transistors, each phase of the three phases of the three-phase half-bridge circuit comprises 4 insulated gate bipolar transistors, and the three-phase half-bridge circuit is used for driving the permanent magnet synchronous scroll compressor connected with the three-phase half-bridge circuit. The permanent magnet synchronous scroll compressor connected with the three-phase half-bridge circuit is driven in a double-tube parallel current expansion mode corresponding to the three-phase half-bridge circuit, the full-load load power of the permanent magnet synchronous scroll compressor can meet the driving refrigeration requirement of large equipment, the on-load overcurrent capacity is enhanced in the double-tube parallel current expansion mode, and the influence of the environment temperature is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of compressors, and in particular to a high-power compressor driving circuit, a high-power compressor and a control method thereof. Background Art

[0002] Permanent magnet synchronous motor compressor drive (PMSM compressor drive, PMSM stands for Permanent Magnet Synchronous Motor and represents permanent magnet synchronous motor) has the characteristics of small size, light weight and high efficiency, and it is also a nonlinear, strongly coupled and multi-variable object. Therefore, in actual production and applications, such as in the field of electric vehicles (EV, its full name is Electric Vehicle), permanent magnet synchronous motors have become ideal drive choices due to their high torque density and fast response characteristics.

[0003] Especially in pure electric vehicles, new energy vehicle refrigeration equipment, namely the scroll PMSM compressor, is an important type of compressor, which is usually used to compress gas into high-pressure gas or extract low-pressure gas. The scroll PMSM compressor adopts the characteristics of turbines and centrifuges, and can efficiently compress gas to the required pressure or vacuum, which makes the scroll PMSM compressor widely used in air compressors. For example, scroll PMSM compressors are usually used in manufacturers, auto repair shops, construction sites and other fields to provide compressed air refrigeration to factories or construction sites.

[0004] At present, the compressor driver used in common high-power PMSM compressors adopts single-tube drive, and the operating temperature range is relatively narrow, for example, it usually only works between -20℃ and +60℃. If the working environment temperature of the high-power PMSM compressor is too high or too low, the overcurrent capacity of the compressor driver will drop sharply, and the external electromagnetic interference will become serious. Summary of the invention

[0005] The embodiments of the present invention provide a high-power compressor drive circuit, a high-power compressor and a control method thereof, aiming to solve the problem that the compressor driver used in the high-power PMSM compressor in the prior art adopts a single-tube drive and has a narrow operating temperature range. If the working environment temperature is too high or too low, the overcurrent capacity of the compressor driver drops sharply and the external electromagnetic interference becomes serious.

[0006] In the first aspect, an embodiment of the present invention provides a high-power compressor drive circuit, which includes a controller, a three-phase half-bridge drive circuit, a three-phase half-bridge circuit and a DC-DC converter; the three-phase half-bridge drive circuit is connected to the controller; the three-phase half-bridge drive circuit is also connected to the three-phase half-bridge circuit; the DC-DC converter is connected to both the controller and the three-phase half-bridge drive circuit; wherein the three-phase half-bridge circuit includes 12 insulated gate bipolar transistors, and each of the three phases of the three-phase half-bridge circuit includes 4 insulated gate bipolar transistors, and the three-phase half-bridge circuit is used to drive the connected permanent magnet synchronous scroll compressor.

[0007] In the second aspect, an embodiment of the present invention also provides a high-power compressor, which includes the high-power compressor driving circuit as described in the first aspect above, and also includes a permanent magnet synchronous scroll compressor; the three-phase half-bridge circuit in the high-power compressor driving circuit is connected to the permanent magnet synchronous scroll compressor.

[0008] In a third aspect, an embodiment of the present invention further provides a control method for a high-power compressor, which is applied to the high-power compressor as described in the second aspect above; the control method for the high-power compressor comprises: When the controller in the high-power compressor detects the driving control signal, it generates a three-phase half-bridge driving circuit start signal and sends it to the three-phase half-bridge driving circuit in the high-power compressor; The three-phase half-bridge driving circuit is started according to the three-phase half-bridge driving circuit starting signal, generates a three-phase half-bridge circuit driving signal and sends it to the three-phase half-bridge circuit in the high-power compressor; The three-phase half-bridge circuit drives the permanent magnet synchronous scroll compressor in the high-power compressor correspondingly through the three-phase half-bridge circuit driving signal and the step-down voltage output by the DC-DC converter in the high-power compressor; The permanent magnet synchronous scroll compressor performs refrigeration according to preset refrigeration working parameters.

[0009] The embodiment of the present invention provides a high-power compressor drive circuit, a high-power compressor and a control method thereof, wherein the high-power compressor drive circuit includes a controller, a three-phase half-bridge drive circuit, a three-phase half-bridge circuit and a DC-DC converter; the three-phase half-bridge drive circuit is connected to the controller; the three-phase half-bridge drive circuit is connected to the three-phase half-bridge circuit; the DC-DC converter is connected to both the controller and the three-phase half-bridge drive circuit; wherein the three-phase half-bridge circuit includes 12 insulated gate bipolar transistors, and each of the three phases of the three-phase half-bridge circuit includes 4 insulated gate bipolar transistors, and the three-phase half-bridge circuit is used to drive the connected permanent magnet synchronous scroll compressor. The embodiment of the present invention drives the connected permanent magnet synchronous scroll compressor through the double-tube parallel expansion mode corresponding to the three-phase half-bridge circuit, so that its full-load power can reach the driving refrigeration demand of large equipment, and the load overcurrent capacity is enhanced under the double-tube parallel expansion mode, and the influence of ambient temperature becomes less. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0011] Figure 1 A schematic block diagram of the structure of a high-power compressor driving circuit provided by an embodiment of the present invention; Figure 2 A schematic diagram of a circuit topology structure of a high-power compressor driving circuit provided by an embodiment of the present invention; Figure 3 A schematic diagram of the circuit board structure of a high-power compressor driving circuit in a high-power compressor provided in an embodiment of the present invention; Figure 4 A schematic flow chart of a control method for a high-power compressor provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0012] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0013] It should be understood that when used in this specification and the appended claims, the terms "include" and "comprises" indicate the presence of described features, integers, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or combinations thereof.

[0014] It should also be understood that the terms used in this specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the specification of the present invention and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0015] It should be further understood that the term "and / or" used in the present description and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

[0016] Please also see Figure 1 and Figure 2 ,in Figure 1 A schematic block diagram of the structure of a high-power compressor driving circuit provided by an embodiment of the present invention, Figure 2 Schematic diagram of the circuit topology structure of the high-power compressor drive circuit provided by the embodiment of the present invention. Figure 1 and Figure 2 As shown, the high-power compressor drive circuit includes a controller 10, a three-phase half-bridge drive circuit 20, a three-phase half-bridge circuit 30 and a DC-DC converter 40; the three-phase half-bridge drive circuit 20 is connected to the controller 10; the three-phase half-bridge drive circuit 20 is also connected to the three-phase half-bridge circuit 30; the DC-DC converter 40 is connected to both the controller 10 and the three-phase half-bridge drive circuit 20; wherein the three-phase half-bridge circuit 30 includes 12 insulated gate bipolar transistors, and each of the three phases of the three-phase half-bridge circuit includes 4 insulated gate bipolar transistors, and the three-phase half-bridge circuit 30 is used to drive the connected permanent magnet synchronous scroll compressor 100.

[0017] In this embodiment, in order to realize the driving of the permanent magnet synchronous scroll compressor 100 (i.e., PMSM scroll compressor) connected to the three-phase half-bridge circuit, the high-power compressor driving circuit in this application can be used. Moreover, the difference from the existing single-tube driving method is that the three-phase half-bridge circuit 30 is used to drive the connected permanent magnet synchronous scroll compressor in this application, and the three-phase half-bridge inverter topology structure in the three-phase half-bridge circuit 30 is a double-tube parallel expansion drive mode, and its full-load power can meet the refrigeration demand of large-scale equipment driving, and the load overcurrent capacity is enhanced under the double-tube parallel expansion mode, and the influence of ambient temperature becomes less. Wherein, if the four insulated gate bipolar transistors included in the first phase of the three phases of the three-phase half-bridge circuit are recorded as the first edge gate bipolar transistor to the fourth edge gate bipolar transistor, the first edge gate bipolar transistor and the second edge gate bipolar transistor are connected in parallel to form a first insulated gate bipolar transistor group, and the third edge gate bipolar transistor and the fourth edge gate bipolar transistor are connected in parallel to form a second insulated gate bipolar transistor group, and then the first insulated gate bipolar transistor group and the second insulated gate bipolar transistor group are connected in series. Moreover, the second insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a first sampling resistor to form a loop, and the first sampling resistor is also connected to the controller through a first operational amplifier.

[0018] Similarly, if the four insulated gate bipolar transistors included in the second phase of the three phases of the three-phase half-bridge circuit are recorded as the fifth edge gate bipolar transistor to the eighth edge gate bipolar transistor, the fifth edge gate bipolar transistor and the sixth edge gate bipolar transistor are connected in parallel to form a third insulated gate bipolar transistor group, and the seventh edge gate bipolar transistor and the eighth edge gate bipolar transistor are connected in parallel to form a fourth insulated gate bipolar transistor group, and then the third insulated gate bipolar transistor group and the fourth insulated gate bipolar transistor group are connected in series. Moreover, the fourth insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a second sampling resistor to form a loop, and the second sampling resistor is also connected to the controller through a second operational amplifier.

[0019] Similarly, if the four insulated gate bipolar transistors included in the third phase of the three phases of the three-phase half-bridge circuit are recorded as the ninth edge gate bipolar transistor to the twelfth edge gate bipolar transistor, the ninth edge gate bipolar transistor and the tenth edge gate bipolar transistor are connected in parallel to form a fifth insulated gate bipolar transistor group, and the eleventh edge gate bipolar transistor and the twelfth edge gate bipolar transistor are connected in parallel to form a sixth insulated gate bipolar transistor group, and then the fifth insulated gate bipolar transistor group and the sixth insulated gate bipolar transistor group are connected in series. Moreover, the sixth insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a third sampling resistor to form a loop, and the third sampling resistor is also connected to the controller through a third operational amplifier.

[0020] The specific process of the high-power compressor driving circuit in the present application driving the connected permanent magnet synchronous scroll compressor 100 is as follows: 1) When the controller 10 detects the driving control signal, it generates a three-phase half-bridge driving circuit start signal and sends it to the three-phase half-bridge driving circuit 20; the controller 10 may be implemented using a DSP chip (DSP stands for Digital Signal Process, which means digital signal processing); 2) The three-phase half-bridge driving circuit 20 is started according to the three-phase half-bridge driving circuit starting signal, generates a three-phase half-bridge circuit driving signal and sends it to the three-phase half-bridge circuit 30; 3) The three-phase half-bridge circuit 30 drives the connected permanent magnet synchronous scroll compressor correspondingly through the three-phase half-bridge circuit driving signal and the step-down voltage output by the DC-DC converter 40; After the permanent magnet synchronous scroll compressor is driven and started, the permanent magnet synchronous scroll compressor performs refrigeration according to preset refrigeration working parameters.

[0021] In order to enable the three-phase half-bridge circuit 30 to realize the dual-tube parallel current expansion driving mode, 12 insulated gate bipolar transistors (IGBT, whose full name is Insulate-Gate Bipolar Transistor) are included in the three-phase half-bridge circuit 30, and each of the three phases of the three-phase half-bridge circuit 30 includes 4 insulated gate bipolar transistors. Moreover, the 12 insulated gate bipolar transistors included in the three-phase half-bridge circuit 30 need to use the same batch of materials, that is, to ensure that the 12 insulated gate bipolar transistors are obtained by the same manufacturing process, so as to ensure that the 12 insulated gate bipolar transistors have the same or extremely similar IGBT saturation voltage drop and diode Vf characteristics.

[0022] In a specific implementation, the three-phase half-bridge circuit 30 is also connected to a DC power supply via a DC bus, and the DC power supply can provide a stable DC voltage to the three-phase half-bridge circuit 30. Figure 2 BUS+ in the figure represents a DC bus connected to the positive pole of the DC power supply, and BUS- represents a DC bus connected to the negative pole of the DC power supply. Moreover, the DC bus connected to the positive pole of the DC power supply and the DC bus connected to the negative pole of the DC power supply are also connected via a first capacitor C1.

[0023] In one embodiment, if Figure 1 and Figure 2 As shown, the high-power compressor driving circuit further includes a CAN communication chip 50 ; the CAN communication chip 50 is connected to both the controller 10 and the DC-DC converter 40 .

[0024] In this embodiment, if the high-power compressor drive circuit of the present application is applied to an electric vehicle as an example, when the high-power compressor drive circuit is set on the low-voltage side (which can also be understood as the low-voltage domain) except for the DC-DC converter 40, the remaining components are all set on the high-voltage side. When the controller 10 needs to communicate with the components on the low-voltage side (such as a microcontroller set on the low-voltage side), the controller 10 must first send the data to be transmitted or the instructions to be transmitted to the CAN communication chip 50 (the full name of CAN is Controller Area Network, and CAN communication means controller area network communication). Because the isolation chip is used as an intermediate component between the high-voltage domain and the low-voltage domain of the electric vehicle, the CAN communication chip 50 will first send the data to be transmitted or the instructions to be transmitted to the isolation chip for electrical isolation processing before sending it to the components on the low-voltage side. It can be seen that the communication capability between the controller and the low-voltage domain components is enhanced by the CAN communication chip.

[0025] In one embodiment, if Figure 1 and Figure 2 As shown, the high-power compressor driving circuit further includes a sampling circuit 60 ; the sampling circuit 60 is connected to both the controller 10 and the DC-DC converter 40 .

[0026] In this embodiment, by connecting the sampling circuit to the controller 10, the current and voltage input to the controller 10 can be sampled respectively, and the obtained current sampled current and current sampled voltage are sent to the controller to obtain the current working parameters in time. Moreover, when the controller 10 compares the current sampled current and current sampled voltage with the normal current and normal voltage, it can also detect whether there is an abnormality in the high-power compressor drive circuit.

[0027] In one embodiment, if Figure 1 and Figure 2 As shown, the input end of the DC-DC converter 40 is connected to a 24V DC power supply through a first diode D1; the first output end of the DC-DC converter 40 outputs a low-voltage side 5V voltage to the CAN communication chip 50; the second output end of the DC-DC converter 40 outputs a 16V voltage to the three-phase half-bridge drive circuit 20; the third output end of the DC-DC converter 40 outputs a high-voltage side 5V voltage which is stepped down to 3.3V by a low voltage difference linear regulator 41 and output to the sampling circuit 60.

[0028] In this embodiment, the high-power compressor driving circuit of the present application is still used in an electric vehicle as an example. In the high-power compressor driving circuit, except for the DC-DC converter 40 arranged on the low-voltage side, the remaining components are arranged on the high-voltage side. The input end of the DC-DC converter 40 is connected to the 24V DC power supply through the first diode D1. Specifically, the 24V DC power supply (at Figure 2 The positive electrode of the first diode D1 (indicated by +24V in the figure) is connected to the positive electrode of the first diode D1, and the negative electrode of the first diode D1 is connected to the input end of the DC-DC converter 40. The first output end of the DC-DC converter 40 outputs a low-voltage side 5V voltage to the CAN communication chip 50; the second output end of the DC-DC converter 40 outputs a 16V voltage to the three-phase half-bridge drive circuit 20, and the second output end of the DC-DC converter 40 is also grounded through the second capacitor C2 (in specific implementation, the fourth output end of the DC-DC converter 40 can also be grounded); the third output end of the DC-DC converter 40 outputs a high-voltage side 5V voltage, which is stepped down to 3.3V by a low-dropout linear regulator 41 (i.e., LDO, the full name of LDO is LowDropout Regulator) and output to the sampling circuit 60, wherein the third output end of the DC-DC converter 40 can also be grounded through a third capacitor C3, and the output end of the low-dropout linear regulator 41 can also be grounded through a fourth capacitor C4. It can be seen that through the above circuit structure, the DC-DC converter can provide corresponding voltages to various components to ensure the normal use of various components.

[0029] The embodiment of the present invention also provides a high-power compressor, still referring to Figure 1 The high-power compressor includes a high-power compressor driving circuit as described in any of the aforementioned embodiments, and also includes a permanent magnet synchronous scroll compressor 100; the three-phase half-bridge circuit 30 in the high-power compressor driving circuit is connected to the permanent magnet synchronous scroll compressor 100.

[0030] In this embodiment, in order to realize the driving of the permanent magnet synchronous scroll compressor 100 (i.e., PMSM scroll compressor) connected to the three-phase half-bridge circuit, the high-power compressor driving circuit in this application can be used. Moreover, the difference from the existing single-tube driving method is that the three-phase half-bridge circuit 30 is used to drive the connected permanent magnet synchronous scroll compressor in this application, and the three-phase half-bridge inverter topology structure in the three-phase half-bridge circuit 30 is a double-tube parallel expansion drive mode, and its full-load power can meet the refrigeration demand of large-scale equipment driving, and the load overcurrent capacity is enhanced under the double-tube parallel expansion mode, and the influence of ambient temperature becomes less.

[0031] The specific process of the high-power compressor driving circuit in the present application driving the connected permanent magnet synchronous scroll compressor 100 is as follows: 11) When the controller 10 detects the driving control signal, it generates a three-phase half-bridge driving circuit start signal and sends it to the three-phase half-bridge driving circuit 20; 12) The three-phase half-bridge driving circuit 20 starts correspondingly according to the three-phase half-bridge driving circuit starting signal, generates a three-phase half-bridge circuit driving signal and sends it to the three-phase half-bridge circuit 30; 13) The three-phase half-bridge circuit 30 drives the connected permanent magnet synchronous scroll compressor correspondingly through the three-phase half-bridge circuit driving signal and the step-down voltage output by the DC-DC converter 40; After the permanent magnet synchronous scroll compressor is driven and started, the permanent magnet synchronous scroll compressor performs refrigeration according to preset refrigeration working parameters.

[0032] In order to enable the three-phase half-bridge circuit 30 to realize the dual-tube parallel current expansion driving mode, the three-phase half-bridge circuit 30 includes 12 insulated gate bipolar transistors (IGBT, whose full name is Insulate-Gate Bipolar Transistor), and each of the three phases of the three-phase half-bridge circuit 30 includes 4 insulated gate bipolar transistors. In which, if the 4 insulated gate bipolar transistors included in the first phase of the three phases of the three-phase half-bridge circuit are respectively recorded as the first edge gate bipolar transistor to the fourth edge gate bipolar transistor, the first edge gate bipolar transistor and the second edge gate bipolar transistor are connected in parallel to form a first insulated gate bipolar transistor group, and the third edge gate bipolar transistor and the fourth edge gate bipolar transistor are connected in parallel to form a second insulated gate bipolar transistor group, and then the first insulated gate bipolar transistor group and the second insulated gate bipolar transistor group are connected in series. In addition, the second insulated gate bipolar transistor group can also be connected to the ground of the high voltage side through a first sampling resistor to form a loop, and the first sampling resistor is also connected to the controller through a first operational amplifier.

[0033] Similarly, if the four insulated gate bipolar transistors included in the second phase of the three phases of the three-phase half-bridge circuit are recorded as the fifth edge gate bipolar transistor to the eighth edge gate bipolar transistor, the fifth edge gate bipolar transistor and the sixth edge gate bipolar transistor are connected in parallel to form a third insulated gate bipolar transistor group, and the seventh edge gate bipolar transistor and the eighth edge gate bipolar transistor are connected in parallel to form a fourth insulated gate bipolar transistor group, and then the third insulated gate bipolar transistor group and the fourth insulated gate bipolar transistor group are connected in series. Moreover, the fourth insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a second sampling resistor to form a loop, and the second sampling resistor is also connected to the controller through a second operational amplifier.

[0034] Similarly, if the four insulated gate bipolar transistors included in the third phase of the three phases of the three-phase half-bridge circuit are recorded as the ninth edge gate bipolar transistor to the twelfth edge gate bipolar transistor, the ninth edge gate bipolar transistor and the tenth edge gate bipolar transistor are connected in parallel to form a fifth insulated gate bipolar transistor group, and the eleventh edge gate bipolar transistor and the twelfth edge gate bipolar transistor are connected in parallel to form a sixth insulated gate bipolar transistor group, and then the fifth insulated gate bipolar transistor group and the sixth insulated gate bipolar transistor group are connected in series. Moreover, the sixth insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a third sampling resistor to form a loop, and the third sampling resistor is also connected to the controller through a third operational amplifier.

[0035] In one embodiment, if Figure 2 and Figure 3 As shown, the three-phase half-bridge circuit 30 is arranged on a circuit board 70, and each of the three phases of the three-phase half-bridge circuit includes two insulated gate bipolar transistors 31 connected in series using the same routing line on the circuit board 70, and the total routing length of each phase is the same.

[0036] In this embodiment, when the three-phase half-bridge circuit 30 is arranged on the circuit board 70 and the parallel IGBT layout is symmetrically placed, the shortest and most optimized driving path must be met to reduce the circuit stray coupling parameters introduced by the routing difference. In addition, the driving control signal wiring from the controller 10 has the highest priority, and the total routing length between the upper and lower tubes in the three phases is kept consistent to ensure the synchronization of the dual-tube parallel driving signal.

[0037] In one embodiment, if Figure 2 and Figure 3 As shown, each phase of the three-phase half-bridge circuit 30 includes two insulated gate bipolar transistors 31 connected in series, which are arranged on the upper end surface of the circuit board 70 through an aluminum nitride ceramic sheet 71.

[0038] In this embodiment, when the two insulated gate bipolar transistors 31 connected in series in each phase are arranged on the upper end surface of the circuit board 70 through the aluminum nitride ceramic sheet 71, and high thermal conductivity silicone grease is used between the contact surface of the aluminum nitride ceramic sheet 71 and the circuit board 70, the heat generated by the insulated gate bipolar transistors 31 can be effectively dissipated.

[0039] In one embodiment, if Figure 2 and Figure 3 As shown, a plurality of heat dissipation fins are further provided on the lower end surface of the circuit board 70 , and the plurality of heat dissipation fins are located below the three-phase half-bridge circuit 30 .

[0040] In this embodiment, in order to further improve the heat dissipation effect of the circuit board, a plurality of heat dissipation fins (not shown) may be further provided on the lower end surface of the circuit board 70, and the plurality of heat dissipation fins are located below the three-phase half-bridge circuit 30. Through this heat dissipation design, the temperature difference deviation of all components in the high-power compressor drive circuit can be kept small.

[0041] In one embodiment, if Figure 2 and Figure 3 As shown, the 12 insulated gate bipolar transistors 31 included in the three-phase half-bridge circuit are all insulated gate bipolar transistors of the same type.

[0042] In this embodiment, the three-phase half-bridge circuit 30 includes 12 insulated gate bipolar transistors 31 which need to use the same batch of materials, that is, ensure that the 12 insulated gate bipolar transistors are obtained using the same manufacturing process, thereby ensuring that the 12 insulated gate bipolar transistors have the same or extremely similar IGBT saturation voltage drop and diode Vf characteristics.

[0043] The embodiment of the present invention also provides a control method for a high-power compressor. Figure 4 As shown, it is a flow chart of a control method for a high-power compressor provided by an embodiment of the present invention. The control method for a high-power compressor is applied to a high-power compressor as described in any of the above embodiments, such as Figure 4 As shown, the control method of the high-power compressor provided by the present invention includes steps S110-S140.

[0044] S110, when the controller in the high-power compressor detects a drive control signal, it generates a three-phase half-bridge drive circuit start signal and sends it to the three-phase half-bridge drive circuit in the high-power compressor; S120, the three-phase half-bridge drive circuit is started according to the three-phase half-bridge drive circuit start signal, generates a three-phase half-bridge circuit drive signal and sends it to the three-phase half-bridge circuit in the high-power compressor; S130, the three-phase half-bridge circuit drives the permanent magnet synchronous scroll compressor in the high-power compressor correspondingly through the three-phase half-bridge circuit driving signal and the step-down voltage output by the DC-DC converter in the high-power compressor; S140, the permanent magnet synchronous scroll compressor performs cooling according to preset refrigeration working parameters.

[0045] In this example, please combine Figure 1-Figure 3In order to enable the three-phase half-bridge circuit 30 to realize the dual-tube parallel current expansion driving mode, the three-phase half-bridge circuit 30 includes 12 insulated gate bipolar transistors (IGBT, whose full name is Insulate-Gate Bipolar Transistor), and each of the three phases of the three-phase half-bridge circuit 30 includes 4 insulated gate bipolar transistors. Moreover, the 12 insulated gate bipolar transistors included in the three-phase half-bridge circuit 30 need to use the same batch of materials, that is, to ensure that the 12 insulated gate bipolar transistors are obtained by the same manufacturing process, so as to ensure that the 12 insulated gate bipolar transistors have the same or extremely similar IGBT saturation voltage drop and diode Vf characteristics. Wherein, if the four insulated gate bipolar transistors included in the first phase of the three phases of the three-phase half-bridge circuit are recorded as the first edge gate bipolar transistor to the fourth edge gate bipolar transistor, the first edge gate bipolar transistor and the second edge gate bipolar transistor are connected in parallel to form a first insulated gate bipolar transistor group, and the third edge gate bipolar transistor and the fourth edge gate bipolar transistor are connected in parallel to form a second insulated gate bipolar transistor group, and then the first insulated gate bipolar transistor group and the second insulated gate bipolar transistor group are connected in series. Moreover, the second insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a first sampling resistor to form a loop, and the first sampling resistor is also connected to the controller through a first operational amplifier.

[0046] Similarly, if the four insulated gate bipolar transistors included in the second phase of the three phases of the three-phase half-bridge circuit are recorded as the fifth edge gate bipolar transistor to the eighth edge gate bipolar transistor, the fifth edge gate bipolar transistor and the sixth edge gate bipolar transistor are connected in parallel to form a third insulated gate bipolar transistor group, and the seventh edge gate bipolar transistor and the eighth edge gate bipolar transistor are connected in parallel to form a fourth insulated gate bipolar transistor group, and then the third insulated gate bipolar transistor group and the fourth insulated gate bipolar transistor group are connected in series. Moreover, the fourth insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a second sampling resistor to form a loop, and the second sampling resistor is also connected to the controller through a second operational amplifier.

[0047] Similarly, if the four insulated gate bipolar transistors included in the third phase of the three phases of the three-phase half-bridge circuit are recorded as the ninth edge gate bipolar transistor to the twelfth edge gate bipolar transistor, the ninth edge gate bipolar transistor and the tenth edge gate bipolar transistor are connected in parallel to form a fifth insulated gate bipolar transistor group, and the eleventh edge gate bipolar transistor and the twelfth edge gate bipolar transistor are connected in parallel to form a sixth insulated gate bipolar transistor group, and then the fifth insulated gate bipolar transistor group and the sixth insulated gate bipolar transistor group are connected in series. Moreover, the sixth insulated gate bipolar transistor group can also be connected to the ground on the high voltage side through a third sampling resistor to form a loop, and the third sampling resistor is also connected to the controller through a third operational amplifier.

[0048] In a specific implementation, the three-phase half-bridge circuit 30 is also connected to a DC power supply via a DC bus, and the DC power supply can provide a stable DC voltage to the three-phase half-bridge circuit 30. Figure 2 BUS+ in the figure represents a DC bus connected to the positive pole of the DC power supply, and BUS- represents a DC bus connected to the negative pole of the DC power supply. Moreover, the DC bus connected to the positive pole of the DC power supply and the DC bus connected to the negative pole of the DC power supply are also connected via a first capacitor C1.

[0049] The high-power compressor drive circuit also includes a CAN communication chip 50; the CAN communication chip 50 is connected to the controller 10 and the DC-DC converter 40. If the high-power compressor drive circuit of the present application is applied to an electric vehicle as an example, when the high-power compressor drive circuit is set on the low-voltage side (also understood as the low-voltage domain), the remaining components are all set on the high-voltage side. When the controller 10 needs to communicate with the components on the low-voltage side (such as a microcontroller set on the low-voltage side), the controller 10 must first send the data to be transmitted or the instructions to be transmitted to the CAN communication chip 50 (the full name of CAN is Controller Area Network, and CAN communication means controller local area network communication). Because the isolation chip is used as an intermediate component between the high-voltage domain and the low-voltage domain of the electric vehicle, the CAN communication chip 50 first sends the data to be transmitted or the instructions to be transmitted to the isolation chip for electrical isolation processing before sending it to the components on the low-voltage side. It can be seen that the communication capability between the controller and the low-voltage domain components is enhanced by the CAN communication chip.

[0050] The high-power compressor drive circuit also includes a sampling circuit 60; the sampling circuit 60 is connected to both the controller 10 and the DC-DC converter 40. By connecting the sampling circuit to the controller 10, the current and voltage input to the controller 10 can be sampled respectively, and the obtained current sampled current and current sampled voltage are sent to the controller for timely acquisition of current working parameters. Moreover, when the controller 10 compares the current sampled current and current sampled voltage with the normal current and normal voltage, it can also detect whether there is an abnormality in the high-power compressor drive circuit.

[0051] The input end of the DC-DC converter 40 is connected to a 24V DC power supply through a first diode D1; the first output end of the DC-DC converter 40 outputs a low-voltage side 5V voltage to the CAN communication chip 50; the second output end of the DC-DC converter 40 outputs a 16V voltage to the three-phase half-bridge drive circuit 20; the third output end of the DC-DC converter 40 outputs a high-voltage side 5V voltage which is stepped down to 3.3V by a low voltage difference linear regulator 41 and output to the sampling circuit 60.

[0052] Still taking the high-power compressor driving circuit of the present application applied to electric vehicles as an example, in the high-power compressor driving circuit, except for the DC-DC converter 40 arranged on the low-voltage side, the remaining components are arranged on the high-voltage side. The input end of the DC-DC converter 40 is connected to the 24V DC power supply through the first diode D1, specifically, the 24V DC power supply (at Figure 2 The positive electrode of the first diode D1 (indicated by +24V in the figure) is connected to the positive electrode of the first diode D1, and the negative electrode of the first diode D1 is connected to the input end of the DC-DC converter 40. The first output end of the DC-DC converter 40 outputs a low-voltage side 5V voltage to the CAN communication chip 50; the second output end of the DC-DC converter 40 outputs a 16V voltage to the three-phase half-bridge drive circuit 20, and the second output end of the DC-DC converter 40 is also grounded through the second capacitor C2 (in specific implementation, the fourth output end of the DC-DC converter 40 can also be grounded); the third output end of the DC-DC converter 40 outputs a high-voltage side 5V voltage, which is stepped down to 3.3V by a low-dropout linear regulator 41 (i.e., LDO, the full name of LDO is Low Dropout Regulator) and output to the sampling circuit 60, wherein the third output end of the DC-DC converter 40 can also be grounded through a third capacitor C3, and the output end of the low-dropout linear regulator 41 can also be grounded through a fourth capacitor C4. It can be seen that through the above circuit structure, the DC-DC converter can provide corresponding voltages to various components to ensure the normal use of various components.

[0053] The three-phase half-bridge circuit 30 is arranged on a circuit board 70, and each phase of the three-phase half-bridge circuit includes two insulated gate bipolar transistors 31 connected in series using the same routing line on the circuit board 70, and the total routing length of each phase is the same.

[0054] When the three-phase half-bridge circuit 30 is arranged on the circuit board 70 and the parallel IGBT layout is symmetrically placed, the shortest and most optimized driving path must be met to reduce the circuit stray coupling parameters introduced by the wiring difference. In addition, the driving control signal wiring from the controller 10 has the highest priority, and the total wiring length between the upper and lower tubes in the three phases is kept consistent to ensure the synchronization of the dual-tube parallel driving signal.

[0055] The two insulated gate bipolar transistors 31 connected in series in each of the three phases of the three-phase half-bridge circuit 30 are arranged on the upper end surface of the circuit board 70 through the aluminum nitride ceramic sheet 71. When the two insulated gate bipolar transistors 31 connected in series in each phase are arranged on the upper end surface of the circuit board 70 through the aluminum nitride ceramic sheet 71, and high thermal conductive silicone grease is used between the contact surface of the aluminum nitride ceramic sheet 71 and the circuit board 70, the heat generated by the insulated gate bipolar transistors 31 can be effectively dissipated.

[0056] The lower end surface of the circuit board 70 is also provided with a plurality of heat dissipation fins, and the plurality of heat dissipation fins are located below the three-phase half-bridge circuit 30. In order to further improve the heat dissipation effect of the circuit board, a plurality of heat dissipation fins (not shown) may also be provided on the lower end surface of the circuit board 70, and the plurality of heat dissipation fins are located below the three-phase half-bridge circuit 30. Through this heat dissipation design, the temperature difference deviation of all components on the high-power compressor drive circuit can be kept small.

[0057] The 12 insulated gate bipolar transistors 31 included in the three-phase half-bridge circuit are all insulated gate bipolar transistors of the same model. The 12 insulated gate bipolar transistors 31 included in the three-phase half-bridge circuit 30 need to use the same batch of materials, that is, ensure that the 12 insulated gate bipolar transistors are obtained using the same manufacturing process, thereby ensuring that the 12 insulated gate bipolar transistors have the same or extremely similar IGBT saturation voltage drop and diode Vf characteristics.

[0058] In summary, the embodiment of the present invention provides a high-power compressor drive circuit, a high-power compressor and a control method thereof, wherein the high-power compressor drive circuit includes a controller, a three-phase half-bridge drive circuit, a three-phase half-bridge circuit and a DC-DC converter; the three-phase half-bridge drive circuit is connected to the controller; the three-phase half-bridge drive circuit is connected to the three-phase half-bridge circuit; the DC-DC converter is connected to both the controller and the three-phase half-bridge drive circuit; wherein the three-phase half-bridge circuit includes 12 insulated gate bipolar transistors, and each of the three phases of the three-phase half-bridge circuit includes 4 insulated gate bipolar transistors, and the three-phase half-bridge circuit is used to drive the connected permanent magnet synchronous scroll compressor. The embodiment of the present invention drives the connected permanent magnet synchronous scroll compressor through the double-tube parallel expansion mode corresponding to the three-phase half-bridge circuit, which can achieve its full load power to meet the refrigeration requirements of large-scale equipment driving, and the load overcurrent capacity is enhanced under the double-tube parallel expansion mode, and the influence of ambient temperature becomes less.

[0059] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in terms of function in the above description. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0060] In the several embodiments provided by the present invention, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of each unit is only a logical function division, and there may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed.

[0061] The steps in the method of the embodiment of the present invention can be adjusted in order, combined and deleted according to actual needs. The units in the device of the embodiment of the present invention can be combined, divided and deleted according to actual needs. In addition, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit.

[0062] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a storage medium. Based on this understanding, the technical solution of the present invention is essentially or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, terminal, or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention.

[0063] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A high-power compressor driving circuit, characterized in that: include: A controller, a three-phase half-bridge drive circuit, a three-phase half-bridge circuit and a DC-DC converter; the three-phase half-bridge drive circuit is connected to the controller; the three-phase half-bridge drive circuit is also connected to the three-phase half-bridge circuit; the DC-DC converter is connected to both the controller and the three-phase half-bridge drive circuit; wherein the three-phase half-bridge circuit includes 12 insulated gate bipolar transistors, and each of the three phases of the three-phase half-bridge circuit includes 4 insulated gate bipolar transistors, and the three-phase half-bridge circuit is used to drive the connected permanent magnet synchronous scroll compressor.

2. The high-power compressor driving circuit according to claim 1, characterized in that: It also includes a CAN communication chip; the CAN communication chip is connected to both the controller and the DC-DC converter.

3. The high-power compressor driving circuit according to claim 2, characterized in that: It also includes a sampling circuit; the sampling circuit is connected to both the controller and the DC-DC converter.

4. The high-power compressor driving circuit according to claim 3, characterized in that: The input end of the DC-DC converter is connected to a 24V DC power supply through a first diode; the first output end of the DC-DC converter outputs a low-voltage side 5V voltage to the CAN communication chip; the second output end of the DC-DC converter outputs a 16V voltage to the three-phase half-bridge drive circuit; the third output end of the DC-DC converter outputs a high-voltage side 5V voltage which is stepped down to 3.3V by a low voltage difference linear regulator and output to the sampling circuit.

5. A high-power compressor, characterized in that: It comprises a high-power compressor driving circuit as described in any one of claims 1-4, and also comprises a permanent magnet synchronous scroll compressor; the three-phase half-bridge circuit in the high-power compressor driving circuit is connected to the permanent magnet synchronous scroll compressor.

6. The high-power compressor according to claim 5, characterized in that: The three-phase half-bridge circuit is arranged on a circuit board, and two insulated gate bipolar transistors connected in series in each of the three phases of the three-phase half-bridge circuit adopt the same routing line on the circuit board, and the total routing length of each phase is the same.

7. The high-power compressor according to claim 6, characterized in that: Each phase of the three-phase half-bridge circuit includes two insulated gate bipolar transistors connected in series and arranged on the upper end surface of the circuit board through an aluminum nitride ceramic sheet.

8. The high-power compressor according to claim 7, characterized in that: The lower end surface of the circuit board is also provided with a plurality of heat dissipation fins, and the plurality of heat dissipation fins are located below the three-phase half-bridge circuit.

9. The high-power compressor according to claim 6, characterized in that: The 12 insulated gate bipolar transistors included in the three-phase half-bridge circuit are all insulated gate bipolar transistors of the same type.

10. A control method for a high-power compressor, characterized in that: Applied to the high-power compressor according to any one of claims 5 to 9, the driving control method of the high-power compressor comprises: When the controller in the high-power compressor detects the driving control signal, it generates a three-phase half-bridge driving circuit start signal and sends it to the three-phase half-bridge driving circuit in the high-power compressor; The three-phase half-bridge driving circuit is started according to the three-phase half-bridge driving circuit starting signal, generates a three-phase half-bridge circuit driving signal and sends it to the three-phase half-bridge circuit in the high-power compressor; The three-phase half-bridge circuit drives the permanent magnet synchronous scroll compressor in the high-power compressor correspondingly through the three-phase half-bridge circuit driving signal and the step-down voltage output by the DC-DC converter in the high-power compressor; The permanent magnet synchronous scroll compressor performs refrigeration according to preset refrigeration working parameters.

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