Cutting elements including binder material having modulated morphology, earth-boring tools including such cutting elements, and related methods of making and using such cutting elements

Abstract

The present disclosure provides a method of forming a cutting element, the method comprising: providing a support substrate comprising a homogeneous binder, the homogeneous binder comprising one or more of Ni and Re and Co, Al, C; depositing discrete diamond particles directly on the support substrate; sintering the support substrate and the discrete diamond particles to a temperature of about 1350 DEG C or more at a pressure of about 5 GPa or more to diffuse a portion of the homogeneous binder into the discrete diamond particles and bond the discrete diamond particles to each other to form a cutting table attached to the support substrate; and converting a portion of the homogeneous binder into a metal phase precipitate and an intermetallic phase precipitate comprising one or more of Ni and Re. Related cutting elements, earth-boring tools including such cutting elements, and methods are also disclosed.

Description

[0001] Priority declaration

[0002] This application claims the benefit of the filing date of U.S. Provisional Patent Application Serial No. 63 / 369,486, filed on July 26, 2022, entitled “CUTTING ELEMENTS INCLUDING BINDERMATERIALS HAVING MODULATED MORPHOLOGIES, EARTH-BORING TOOLS INCLUDING SUCHCUTTING ELEMENTS, AND RELATED METHODS OF MAKING AND USING SAME,” the disclosure of which is hereby incorporated by reference in its entirety. Technical Field

[0003] The present disclosure generally relates to cutting elements of earth-boring tools and related earth-boring tools and methods. More specifically, the disclosed embodiments relate to techniques for producing cutting elements including polycrystalline diamond cutting tables and related cutting elements, the polycrystalline diamond cutting tables including a binder material including an intermetallic phase and a metallic phase. Background Art

[0004] Earth-boring tools for forming wellbores in underground formations may include a plurality of cutting elements fixed to a body. For example, a fixed-cutter earth-boring rotary drill bit (also referred to as a "scraper bit") includes a plurality of cutting elements fixedly attached to a drill bit body of the drill bit. Similarly, a roller-boring earth-boring rotary drill bit includes a roller mounted on a bearing pin extending from a leg of the drill bit body so that each roller can rotate about the bearing pin on which the roller is mounted. A plurality of cutting elements may be mounted to each roller of the drill bit.

[0005] Cutting elements for earth-boring tools typically include polycrystalline diamond compact (commonly referred to as "PDC") cutters, which are cutting elements that include polycrystalline diamond (PCD) material. Such polycrystalline diamond cutting elements are formed by sintering and bonding relatively small diamond grains or crystals together under high pressure and high temperature conditions, typically in the presence of a catalyst material (typically including a Group VIII element, such as cobalt (Co), iron (Fe), or nickel (Ni), or an alloy or mixture having such elements), to form a layer of polycrystalline diamond material (e.g., a diamond table) on a cutting element substrate. These processes are typically referred to as high pressure / high temperature (or "HPHT") processes. Catalyst materials are typically mixed with the diamond grains to reduce the amount of diamond oxidation by oxygen and carbon dioxide during the HPHT process and to promote diamond-to-diamond bonding.

[0006] The cutting element substrate may include a cermet material (i.e., a ceramic-metal composite material), such as cobalt-cemented tungsten carbide. In such examples, the cobalt (or other catalyst material) in the cutting element substrate may be absorbed into the diamond grains or crystals during sintering and serve as a catalyst material for forming a diamond table from the diamond grains or crystals. In other approaches, a powdered catalyst material may be mixed with the diamond grains or crystals and then the grains or crystals are sintered together in a HPHT process.

[0007] When a diamond table is formed using an HPHT process, catalyst material may remain in the interstices between diamond grains or crystals in the resulting polycrystalline diamond table. The presence of catalyst material in the diamond table may result in thermal damage to the diamond table when the cutting element is heated during use due to friction at the contact point between the cutting element and the formation.

[0008] Conventional PDC manufacturing relies on a catalyst alloy (e.g., binder) that is swept through the compacted diamond feed during HPHT synthesis. Conventional catalyst alloys are cobalt (Co) based to promote diamond intergrowth between the compacted diamond material. Conventional Co, Co-Ni alloy, and Co-Ni-Cr alloy materials form a solid binder material that includes a relatively large portion exhibiting a single-phase metallic structure that, while improving the durability of the diamond table, has poor thermal stability. Conventional Co-Al-C alloy materials form a solid binder material that includes a relatively large portion exhibiting a single-phase intermetallic structure that, while thermally stable, is brittle and results in elevated residual stresses and reduced durability of the diamond table. Figure 1A An electron image depicting the morphology of a prior art Co-Al-C alloy material. The darker portion of the image depicts intermetallic phase precipitates. Figure 1B An electron image of the fracture morphology of a prior art cutting element comprising a Co-Al-C alloy material after a fracture event is depicted. Figure 1BAs shown, conventional Co-Al-C alloy materials exhibit brittle fracture morphology, as evidenced by the relatively flat morphology shown within the Co-Al-C alloy material. Conventional alloys also unfavorably contribute to the formation of graphite from diamond during drilling. The formation of graphite in PCD materials may cause the diamond necking region (i.e., grain boundary) to break due to the volume expansion of about 57% during the transformation. This phase transformation is called "reverse transformation" or "inverse graphitization" and typically occurs at temperatures in excess of 900°C, close to the cutting edge temperature of the cutting element experienced during drilling applications. This mechanism, coupled with the mismatch in the thermal expansion coefficients of the metal phase and diamond at temperatures in excess of 600°C, is considered to be an important part of the degradation of the general performance standard of "thermal stability". From the experimental wear conditions, "reverse transformation" appears to be the main cause of PDC thermal stability impairment, promoting premature degradation of the cutting edge and performance.

[0009] In order to reduce the problems associated with conventional binder materials (e.g., thermal stability, residual stresses, durability), different thermal expansion rates and reverse transformation in polycrystalline diamond cutting elements, so-called "thermally stable" polycrystalline diamond (TSD) cutting elements have been developed. TSD cutting elements can be formed by leaching catalyst material (e.g., cobalt) from the interstices between diamond grains in a diamond table using, for example, an acid. Substantially all of the catalyst material can be removed from the diamond table, or only a portion can be removed. TSD cutting elements in which substantially all of the catalyst material has been leached from the diamond table are reported to be thermally stable at temperatures up to about 1200° C. However, it has been determined that a fully leached diamond table is relatively more brittle and more susceptible to shear, compressive and tensile stresses than an unleached diamond table. In an effort to provide cutting elements having a diamond table that is more thermally stable relative to an unleached diamond table, but also relatively less brittle and less susceptible to shear, compressive, and tensile stresses relative to a fully leached diamond table, cutting elements have been provided that include a diamond table wherein only at least a portion of the catalyst material has been leached from the diamond table. Summary of the invention

[0010] Some embodiments of the present disclosure include a method of forming a cutting element. The method may include: providing a support substrate comprising a homogeneous binder, the homogeneous binder comprising one or more of Ni and Re and Co, Al, C; depositing discrete diamond particles directly on the support substrate; sintering the support substrate and the discrete diamond particles to a temperature of about 1350° C. or higher at a pressure of about 5 GPa or higher to diffuse a portion of the homogeneous binder into the discrete diamond particles and bond the discrete diamond particles to each other to form a cutting table attached to the support substrate; and converting a portion of the homogeneous binder into a metallic phase precipitate and an intermetallic phase precipitate comprising one or more of Ni and Re.

[0011] Additional embodiments include a cutting element for an earth-boring tool. The cutting element may include: a cutting table including interbonded diamond particles and a binder material located within interstices between the interbonded diamond particles, the binder material comprising one or more of Ni and Re and Co, Al, C; and a support substrate attached to the cutting table. The binder material comprises a mixture of intermetallic phase precipitates and metallic phase precipitates.

[0012] Additional embodiments include a method of forming a cutting element. The method may include: forming a support substrate comprising a carbide material dispersed in a homogeneous binder, the homogeneous binder comprising one or more of Ni and Re and Co, Al, C; depositing discrete diamond particles on the support substrate; sintering the support substrate and the discrete diamond particles at a pressure of about 5 GPa or more to a temperature above the solidus temperature of the homogeneous binder to diffuse a portion of the homogeneous binder into the discrete diamond particles and bond the discrete diamond particles to each other to form a PDC attached to the support substrate; and simultaneously converting a portion of the homogeneous binder into intermetallic phase precipitates and metallic phase precipitates. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] For a detailed understanding of the present disclosure, reference should be made to the following detailed description in conjunction with the accompanying drawings, in which like elements are generally represented by like numerals, and in which:

[0014] Figure 1A It is an electron image of the Co-Al-C alloy material of the prior art;

[0015] Figure 1B is an electron image of a prior art cutting element comprising a Co-Al-C alloy material;

[0016] FIG. 2A to FIG. 2B is a cross-sectional view of various actions of a method of forming a cutting element according to an embodiment of the present disclosure;

[0017] Figure 3A is an optical image of a binder material having a modulated morphology according to an embodiment of the present disclosure;

[0018] Figure 3B is an electronic image of a binder material having a modulated morphology according to an embodiment of the present disclosure;

[0019] Figure 3C is an electronic image of a binder material having a modulated morphology according to an embodiment of the present disclosure;

[0020] Figure 3D is an electron image of a cutting element including a binder material having a modulated morphology after a fracture event according to an embodiment of the present disclosure;

[0021] Figure 4 is a partially cut-away perspective view of a cutting element according to an embodiment of the present disclosure; and

[0022] Figure 5 is a perspective view of an earth-boring tool including one or more cutting elements according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0023] The illustrations presented herein are not actual views of any particular cutting element or earth-boring tool, but are merely idealized representations used to describe exemplary embodiments of the present disclosure. Additionally, common elements between the figures may retain the same numerical designations.

[0024] Cutting elements, earth-boring tools and methods disclosed herein include controlling the binder phase morphology of a binder material present in a polycrystalline diamond compact (PDC) to include an intermetallic phase that ensures thermal stability and a metallic phase that ensures durability. The controlled binder phase morphology can provide higher PDC durability and lower residual stress by allowing the metallic phase to effectively adapt to the applied strain, which would otherwise cause damage in a Co-Al-C PDC without a controlled binder phase morphology. Control of the binder phase morphology can be achieved by two methods. In one method, Ni is added to reduce the carbon solubility of the intermetallic phase binder material, converting the carbon-saturated eutectic composition of the intermetallic phase binder material to be richer in Al and / or promoting solidification segregation. In another method, solidification segregation is promoted by adding Re because Re exhibits limited solubility in the intermetallic phase binder material, thereby promoting solidification of the modulated metallic phase and intermetallic phase of the binder material.

[0025] As used herein, the term "particle" refers to and includes any agglomeration of solid matter having an average size of about 500 μm or less. Grains (ie, crystals) and coated grains are types of particles.

[0026] As used herein, the term "polycrystalline diamond compact" refers to and includes any structure having polycrystalline diamond material including inter-particle bonds formed by a process involving the application of pressure (eg, compaction) to one or more precursor materials used to form the polycrystalline diamond material.

[0027] Thus, as used herein, the term "leached" when applied to a volume of polycrystalline hard material (e.g., a polycrystalline diamond table) means that the volume or at least a region of the volume does not include catalyst material in the interstices between interbonded diamond grains, regardless of whether the catalyst material is removed from the region (by a leaching process or any other removal process). Similarly, as used herein, the term "leached" means and includes the removal of catalyst material from the interstices between interbonded diamond grains of a polycrystalline diamond table by any technique, not limited to acid leaching.

[0028] As used herein, the term "earth-boring tool" means and includes any type of drill bit or tool used for drilling during the formation or enlargement of a wellbore, and includes, for example, rotary drill bits, percussion drill bits, coring drill bits, eccentric drill bits, bi-center drill bits, reamers, milling cutters, drag bits, roller cone bits, hybrid drill bits, and other drill bits and tools known in the art.

[0029] As used herein, the terms "having," "including," "comprising," and their grammatical equivalents are inclusive or open-ended terms that do not exclude additional unrecited elements or method steps, but also include the more restrictive terms "consisting of," "consisting essentially of," and their grammatical equivalents.

[0030] As used herein, the term "may" with respect to a material, structure, feature, or method act indicates that this is contemplated for use in implementing an embodiment of the present disclosure, and this term is used in preference to the more restrictive term "is" in order to avoid any implication that other compatible materials, structures, features, and methods that may be used in combination therewith should or must be excluded.

[0031] As used herein, the term "configured" refers to the size, shape, material composition, and arrangement of one or more of at least one structure and at least one device to facilitate operation of the structure and the device in a predetermined manner.

[0032] As used herein, the singular forms following “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0033] As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0034] As used herein, the term "substantially" with respect to a given parameter, characteristic, or condition means and includes to the extent that a person skilled in the art will understand that the given parameter, characteristic, or condition is met to a small degree of variance (such as within acceptable manufacturing tolerances). For example, a substantially met parameter may be at least about 90% met, at least about 95% met, at least about 99% met, or even about 100% met.

[0035] As used herein, the term "about" used with respect to a given parameter is inclusive of the stated value and has the meaning dictated by the context (eg, it includes the degree of error associated with measurement of the given parameter).

[0036] Figure 2A and Figure 2B A method of forming a cutting element according to an embodiment of the present disclosure is depicted. As described in further detail below, the method includes providing a support substrate 104 including a homogeneous binder (including Co, Al, C and Ni and / or Re) on a diamond powder 102, and subjecting the support substrate 104 and the diamond powder 102 to a sintering process to form a polycrystalline diamond compact (PDC) 112 in situ on the support substrate 104, thereby forming a cutting element 114. The PDC 112 includes a solid binder material having a modulated morphology, which includes intermetallic phase precipitates and metallic phase precipitates, so that the PDC 112 has better thermal stability and durability than a PDC formed using conventional Co, Co-Ni or Co-Ni-Cr binder materials, and has lower residual stress and higher composite durability than a PDC formed using conventional Co-Al-C binder materials.

[0037] refer to Figure 2A , diamond powder 102 may be disposed within a container 100, which is sometimes referred to in the industry as a cylinder or cup and is typically composed of a metal alloy. A support substrate 104 may be disposed on the diamond powder 102 within the container 100. In some embodiments, the support substrate 104 is disposed directly on the diamond powder 102. The container 100 may at least substantially surround the diamond powder 102 and the support substrate 104 and serve to hold them in place during the HPHT sintering process. Figure 2A As shown, the container 100 may include: an inner cup 106 in which the diamond powder 102 and at least a portion of the support substrate 104 are disposed; a bottom end piece 108 in which the inner cup 106 may be at least partially disposed; and a top end piece 110 located above and at least partially surrounding the support substrate 104 and coupled (e.g., swaged) to one or more of the inner cup 106 and the bottom end piece 108. In some embodiments, the bottom end piece 108 is omitted (e.g., does not exist).

[0038] The diamond powder 102 may be formed of and include discrete diamond particles (e.g., discrete natural diamond particles, discrete synthetic diamond particles, combinations thereof, etc.). The discrete diamond particles may individually present a desired grain size. The discrete diamond particles may include one or more of micron-sized diamond particles and nano-sized diamond particles. For example, the individual grain size of the discrete diamond particles may be in the range of about 5 nanometers (nm) to about 100 micrometers (μm), such as in the range of about 50nm to about 50μm, about 100nm to about 30μm, about 500nm to about 20μm, or about 700nm to about 10μm. In some embodiments, the grain size of the discrete diamond particles includes a collection of two or more unimodal grain size distributions. In addition, each discrete diamond particle in the discrete diamond particles may individually present a desired shape, such as at least one of a spherical, hexahedral, elliptical, cylindrical, conical, or irregular shape. In some embodiments, each of the discrete diamond particles in the diamond powder exhibits a substantially spherical shape. The discrete diamond particles may be monodisperse, wherein each discrete diamond particle exhibits substantially the same material composition, size, and shape, or may be polydisperse, wherein at least one of the discrete diamond particles exhibits one or more of a different material composition, a different particle size, and a different shape than at least another discrete diamond particle of the discrete diamond particles.

[0039] The support substrate 104 may include a consolidated structure including a homogeneous binder (e.g., an alloy at least substantially homogeneous) including one or more of nickel (Ni) and rhenium (Re) and cobalt (Co), aluminum (Al), and carbon (C). For example, the homogeneous binder may be a homogeneous Co-Ni-Al-C alloy, a homogeneous Co-Re-Al-C alloy, or a homogeneous Co-Ni-Re-Al-C alloy. In some embodiments, the homogeneous binder includes Co, Al, C, Ni, and Re. The portion of the homogeneous binder containing Co and Ni and / or Re (e.g., the portion of the homogeneous binder other than Al and C) may contain about 0 atomic percent (at%) to about 75 at% Ni, such as, for example, about 15 at% to about 50 at% Ni, about 15 at% to about 75 at% Ni, or about 30 at% to about 50 at% Ni. The portion of the homogeneous binder containing Co and Ni and / or Re (e.g., the portion of the homogeneous binder excluding Al and C) may contain about 0 at % to about 20 at % Re, such as, for example, about 1 at % to about 15 at % Re, about 3 at % to about 12 at % Re, or about 5 at % to about 10 at % Re.

[0040] The consolidated structure of the support substrate 104 may include particles of a carbide material dispersed in a homogeneous binder. The carbide material may include, for example, one or more of tungsten carbide, vanadium carbide, silicon carbide, and tantalum carbide. In some embodiments, the carbide material is tungsten carbide. In some embodiments, the carbide material is a solid solution mixture containing Re, such as, for example, W. 1-x (Re) x C, where 0≤x≤0.2. The consolidated structure may include about 75wt% to about 95wt% of carbide material particles, such as, for example, about 80wt% to about 95wt%, about 85wt% to about 95wt%, or about 80wt% to about 90wt%. The consolidated structure may include about 5wt% to about 25wt% of a homogeneous binder, such as, for example, about 5wt% to about 20wt%, about 5wt% to about 15wt%, or about 10wt% to about 20wt%.

[0041] The consolidated structure of support substrate 104 can be formed by subjecting precursor composition to consolidation process.Precursor composition can include one or more containing Ni and Re and Co, Al, C binder material, carbide material, adhesive and optional one or more additives.Precursor composition can include discrete alloy particles (e.g., discrete Co-Al-C alloy particles, discrete Co-Ni-Al-C alloy particles, discrete Co-Re-Al-C alloy particles, discrete Co-Ni-Re-Al-C alloy particles) and / or discrete simple (e.g., non-alloy) particles (e.g., discrete simple Co particles, discrete simple Al particles, discrete simple C particles, discrete simple Ni particles, discrete simple Re particles).Carbide material can be powder material.In some embodiments, precursor composition includes one or more of discrete simple Ni particles and discrete simple Re particles and discrete Co-Al-C alloy particles. In some embodiments, the precursor composition includes one or more of discrete elemental Ni particles and discrete elemental Re particles and discrete elemental Co particles, discrete elemental Al particles, and discrete elemental C particles.

[0042] The precursor composition may include about 2.5 weight percent (wt%) to about 30 wt% Al, such as, for example, about 3.5 wt% to about 25 wt% Al, about 5 wt% to about 20 wt% Al, about 5 wt% to about 15 wt% Al, or about 7 wt% to about 12 wt% Al. The precursor composition may include about 0.1 wt% to about 4 wt% C, such as, for example, about 0.5 wt% to about 1.5 wt%, about 0.5 wt% to about 2.0 wt%, or about 1 wt% to about 3 wt%. In some embodiments, the ratio of the amount of Ni to the amount of Co in the precursor composition is about 30:70.

[0043] The precursor composition may include 0wt% to about 50wt% Ni, such as, for example, about 5wt% to about 45wt% Ni, about 10wt% to about 40wt% Ni, about 15wt% to about 30wt% Ni, or about 20wt% to about 40wt% Ni. The precursor composition may include about 0wt% to about 44wt% Re, such as, for example, about 5wt% to about 40wt% Re, about 10wt% to about 30wt% Re, or about 15wt% to about 25wt% Re. In some embodiments, the precursor composition includes about 12.01wt% Co, about 1.27wt% Al, about 0.68wt% C, about 9.55wt% Re, and about 76.48wt% carbide material (e.g., WC).

[0044] Each discrete particle of the precursor composition (e.g., discrete alloy particles and / or discrete elemental particles) can individually exhibit a desired particle size, such as a particle size of less than or equal to about 1000 microns (μm). The discrete particles can include, for example, one or more of discrete micron-sized composite particles and discrete nano-sized composite particles. As used herein, the term "micron-sized" means and includes a particle size in the range of about one (1) μm to about 1000 μm, such as about 1 μm to about 500 μm, about 1 μm to about 100 μm, or about 1 μm to about 50 μm. As used herein, the term "nanoscale" means and includes a particle size less than 1 μm, such as less than or equal to about 500 nanometers (nm), or less than or equal to about 250 nm. In addition, each discrete particle can individually present a desired shape, such as one or more of a spherical, hexahedral, ellipsoidal, cylindrical, conical, or irregular shape.

[0045] The discrete particles (e.g., discrete alloy particles and / or discrete elemental particles) of the precursor composition can be monodisperse, wherein each discrete particle presents substantially the same size and substantially the same shape, or can be polydisperse, wherein at least one of the discrete particles exhibits one or more of a particle size different from at least another of the discrete particles and a different shape. In some embodiments, the discrete particles of the precursor composition have a multimodal (e.g., bimodal, trimodal, etc.) particle (e.g., grain) size distribution. For example, the precursor composition may include a combination of relatively large discrete particles and relatively small discrete particles. The multimodal particle size distribution of the precursor composition can, for example, provide a desired particle packing characteristic for the precursor composition, to subsequently form a consolidated structure (e.g., a supporting substrate) therefrom, as described in further detail below. In other embodiments, the precursor composition has a unimodal particle size distribution. For example, all discrete particles of the precursor composition can exhibit substantially the same particle size.

[0046] The binder may include any material that allows the precursor composition to maintain a desired shape during subsequent processing and may be removed (e.g., volatilized) during subsequent processing. As a non-limiting example, the binder may include an organic compound such as a wax (e.g., paraffin). In some embodiments, the binder of the precursor composition is paraffin.

[0047] If present, the additive may comprise any material formulated to impart one or more desired material properties (e.g., fracture toughness, strength, hardness, hardenability, wear resistance, coefficient of thermal expansion, thermal conductivity, corrosion resistance, oxidation resistance, ferromagnetism, etc.) to a consolidated structure (e.g., a supporting substrate) subsequently formed from the precursor composition and / or to impart to the subsequently formed consolidated structure a homogenous binder that is a material composition that facilitates use of the consolidated structure to form a composite sheet structure (e.g., a cutting table such as a PDC table) having desired properties (e.g., wear resistance, impact resistance, thermal stability, etc.). As non-limiting examples, the additive may include one or more elements from one or more of the following groups of the periodic table: Group IIIA (e.g., boron (B), aluminum (Al)); Group IVA (e.g., carbon (C), silicon (Si), germanium (Ge), tin (Sn)); Group IVB (e.g., titanium (Ti), zirconium (Zr), hafnium (Hf)); Group VB (e.g., vanadium (V), niobium (Nb), tantalum (Ta)); Group VIB (e.g., chromium (Cr), molybdenum (Mo), tungsten (W)); Group VIIB (e.g., manganese (Mn)); Group VIIIB (e.g., iron (Fe), ruthenium (Ru), cobalt (Co), rhodium (Rh), iridium (Ir), nickel (Ni)); Group IB (e.g., copper (Cu), silver (Ag), gold (Au)); and Group IIB (e.g., zinc (Zn), cadmium (Cd)). In some embodiments, the additive comprises discrete particles, each of which includes one or more of B, Al, C, Si, Ge, Sn, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Fe, Ru, Co, Rh, Ir, Ni, Cu, Ag, Au, Zn, and Cd. However, the addition of large amounts of Fe, Mn, Si, Ge, Sn, and Ru can result in negligible to adverse changes in the morphology of the solid binder material within the formed PDC 112.

[0048] The consolidation process may include forming the precursor composition into a green structure having a shape that generally corresponds to the shape of the consolidated structure, subjecting the green structure to at least one densification process (e.g., a sintering process, a hot isostatic pressing (HIP) process, a sintering-HIP process, a hot pressing process, etc.) to form a consolidated structure comprising carbide material particles dispersed in an at least partially (e.g., substantially) homogenized binder, and optionally subjecting the consolidated structure to at least one supplemental homogenization process to further homogenize the at least partially homogenized binder. As used herein, the term "green" refers to unsintered. Therefore, as used herein, a "green structure" means and includes an unsintered structure comprising a plurality of particles that can be held together by interactions between one or more materials of the plurality of particles and / or additional materials (e.g., a binder).

[0049] The precursor composition can be formed into a green structure by conventional processes, which will not be described in detail herein. For example, the precursor composition can be placed in a cavity of a container (e.g., a can, a cup, etc.) whose shape is complementary to the desired shape of the consolidated structure (e.g., a cylindrical column shape), and then the precursor composition can be subjected to at least one pressing process (e.g., a cold pressing process, such as a process in which the precursor composition is subjected to compressive pressure without substantially heating the precursor composition) to form the green structure. The pressing process can, for example, subject the precursor composition in the container cavity to a pressure of greater than or equal to about 10 tons / square inch (tons / in 2 )(about 1406 kg / cm2 (kg / cm 2 )) pressure, such as about 10 tons / in 2 About 30 tons / in 2 (about 4218kg / cm 2 ) within the range of .

[0050] After forming the green structure, the binder can be removed from the green structure. For example, the green structure can be dewaxed by vacuum or flowing hydrogen at high temperature. The resulting (e.g., dewaxed) structure can then be subjected to a partial sintering (e.g., pre-sintering) process to form a brown structure with sufficient strength for handling it.

[0051] After forming the brown structure, the brown structure can be subjected to a densification process (e.g., a sintering process, a hot isostatic pressing (HIP) process, a sinter-HIP process, a hot pressing process, etc.) that applies sufficient heat and sufficient pressure to the brown structure to form a consolidated structure including carbide material particles dispersed in an at least partially homogenized binder. As a non-limiting example, the brown structure can be wrapped in a sealing material (e.g., graphite foil) and can then be placed in a container made of a high temperature, self-sealing material. The container can be filled with a suitable pressure-transmitting medium (e.g., glass particles, ceramic particles, graphite particles, salt particles, metal particles, etc.), and the wrapped brown structure can be disposed within the pressure-transmitting medium. The container together with the brown structure and pressure-transmitting medium enclosed therein can then be heated to a consolidation temperature to promote the formation of a homogeneous binder (e.g., a homogeneous Co-Ni-Al-C alloy binder, a homogeneous Co-Re-Al-C alloy binder, or a homogeneous Co-Ni-Re-Al-C alloy binder) under a balanced (e.g., uniform) pressure applied by a press (e.g., a mechanical press, a hydraulic press, etc.) to at least partially (e.g., substantially) consolidate the brown structure and form a consolidated structure. The consolidation temperature can be a temperature greater than the solidus temperature of at least discrete particles (e.g., discrete alloy particles and / or discrete elemental particles) of the precursor composition used to form the brown structure (e.g., a temperature greater than or equal to the liquidus temperature of the discrete particles, a temperature between the solidus temperature and the liquidus temperature of the discrete particles, etc.), and the applied pressure can be greater than or equal to about 10 megapascals (MPa) (e.g., greater than or equal to about 50 MPa, greater than or equal to about 100 MPa, greater than or equal to about 250 MPa, greater than or equal to about 500 MPa, greater than or equal to about 750 MPa, greater than or equal to about 1.0 gigapascals (GPa), etc.). In some embodiments, during the densification process, discrete elemental Ni particles, discrete elemental Re particles, and / or additives (if any) present in the brown structure can diffuse into the molten Co-Al-C alloy and mix uniformly therewith to form at least a partially homogeneous binder (e.g., a homogeneous Co-Ni-Al-C alloy binder, a homogeneous Co-Re-Al-C alloy binder, or a homogeneous Co-Ni-Re-Al-C alloy binder) of the consolidated structure. In some embodiments, during the densification process, at least some Re (if any) can diffuse into the carbide material particles to form a solid solution mixture, such as, for example, W. 1-x (Re) x C, where 0≤x≤0.2. Thus, the precursor composition may comprise a relatively larger amount of Re than the at least partially homogeneous binder, if present.

[0052] As previously described, after formation, the consolidated structure may be subjected to a supplemental homogenization process to further homogenize its at least partially homogenized binder. If performed, the supplemental homogenization process may heat the consolidated structure to one or more temperatures above the liquidus temperature of its at least partially homogenized binder for a sufficiently long period of time to reduce (e.g., substantially eliminate) macrosegregation within the at least partially homogenized binder and provide the resulting further homogenized binder with a single (e.g., only one) melting temperature. In some embodiments, such as in embodiments where the precursor composition for forming the consolidated structure comprises discrete elemental particles (e.g., discrete elemental Co particles, discrete elemental Al particles, discrete C particles, discrete elemental Ni particles, discrete elemental Re particles), since one or more regions of the at least partially homogenized binder exhibit a different material composition than one or more other regions of the at least partially homogenized binder, the at least partially homogenized binder of the consolidated structure may have multiple (e.g., at least two) melting temperatures after the densification process. These different regions can be formed, for example, due to the efficiency margin of source powder mixing and cold consolidation. In such embodiments, the supplemental homogenization process can substantially melt and homogenize the at least partially homogenized binder to remove regions exhibiting different material compositions and provide a further homogenized binder having only one melting point. Providing a homogenized binder having only one melting point for the consolidated structure can facilitate the subsequent use of the consolidated structure to form a cutting table, as described in further detail below. In other embodiments, such as in embodiments where the at least partially homogenized binder of the consolidated structure is substantially uniform (e.g., does not include regions exhibiting a material composition different from that of other regions thereof) after the densification process, the supplemental homogenization process can be omitted.

[0053] The support substrate 104 can be formed to present any desired size and any desired shape. The size and shape of the support substrate 104 can depend at least in part on the desired size and desired shape of the composite sheet structure (e.g., a cutting table, such as PDC 112) that is subsequently formed on the support substrate 104 and / or attached to the support substrate, as described in further detail below. In some embodiments, the support substrate 104 is formed in a cylindrical column shape. In other embodiments, the support substrate 104 can be formed to present different shapes, such as dome-shaped, conical, truncated conical, rectangular column, pyramid-shaped, truncated pyramid-shaped, fin-shaped, pillar-shaped, stud-shaped or irregular. Therefore, the support substrate 104 can be formed to present any desired transverse cross-sectional shape, including but not limited to circular, semicircular, oval, quadrilateral (e.g., square, rectangular, irregular trapezoid, trapezoid, parallelogram, etc.), triangle, ellipse or irregular shape.

[0054] Next reference Figure 2B, the diamond powder 102 and the support substrate 104 may be subjected to an HPHT process (e.g., a sintering process) to form a PDC 112 (e.g., a cutting table) on the support substrate 104. The support substrate 104 is bonded together with the PDC 112 to form a cutting element 114. The HPHT process may include subjecting the diamond powder 102 and the support substrate 104 to high temperature and high pressure in a direct pressurization and / or indirect heating unit for a sufficient time to transform the discrete diamond particles of the diamond powder 102 into inter-bonded diamond particles. The operating parameters of the HPHT process (e.g., temperature, pressure, duration, etc.) depend at least in part on the material composition of the support substrate 104 and the diamond powder 102. During the HPHT process, the temperature within the pressurization and heating unit (e.g., sintering temperature) may be greater than or equal to about 1350° C., such as, for example, greater than or equal to about 1500° C., greater than or equal to about 1700° C., or greater than or equal to about 1900° C. In some embodiments, the temperature within the heating and pressurizing unit may be greater than the solidus temperature of the homogeneous binder of the support substrate 104 (e.g., greater than the solidus temperature and less than or equal to the liquidus temperature, greater than or equal to the liquidus temperature, etc.). During the HPHT process, the pressure within the pressurizing and heating unit may be greater than or equal to about 5.0 GPa, such as, for example, greater than or equal to about 6.0 GPa, greater than or equal to about 7.0 GPa, or greater than or equal to about 8.0 GPa. In some embodiments, during the HPHT treatment, the pressure within the pressurizing and heating unit is in the range of about 5.0 GPa to about 9.0 GPa. The diamond powder 102 and the support substrate 104 may be maintained at such temperature and pressure for a sufficient amount of time, such as, for example, a time period between about 30 seconds to about 30 minutes, to promote mutual bonding of the discrete diamond particles of the diamond powder 102, thereby forming the PDC 112.

[0055] During the HPHT process, the homogeneous binder of the support substrate 104 melts and at least a portion thereof is purged (e.g., mass transported, diffused) into the diamond powder 102. The homogeneous binder received by the diamond powder 102 catalyzes the formation of inter-particle bonds between discrete diamond particles of the diamond powder 102. The type, amount, and distribution of the individual elements of the homogeneous binder purged into the diamond powder 102 during the HTHP process may be at least substantially the same as the type, amount, and distribution of the individual elements of the homogeneous binder of the support substrate 104. In other words, the material composition of the homogeneous binder diffused into the diamond powder 102 to form the PDC 112 during the HTHP process is at least substantially the same as the material composition of the homogeneous binder of the support substrate 104 prior to the HTHP process. Providing the support substrate 104 directly on the diamond powder 102 may ensure that the desired and predetermined chemistry of the homogeneous binder is purged into the diamond powder 102 during the HTHP process.

[0056] At least the Co of the homogeneous binder received by the diamond powder 102 promotes the formation of the inter-bonded diamond particles of the PDC 112. Depending on the amount of Co contained in the homogeneous binder, substantially all of the Co purged into the diamond powder 102 may react during the formation of the PDC 112, or only a portion of the Co purged into the diamond powder 102 may react during the formation of the PDC 112. The material composition of the homogeneous binder of the support substrate 104 may be selected to control the amount of catalytic Co remaining after forming the PDC 112. While the homogeneous binder may allow the catalytic Co to be present in the PDC 112, the material composition of the homogeneous binder may provide the PDC 112 and the homogeneous binder with desired properties (e.g., ductility, durability, thermal stability, etc.). The amount of Co in the homogenous binder supporting substrate 104 (and thus the amount of catalytic Co remaining in the PDC 112 after formation thereof) can be controlled by controlling the amounts of other elements (e.g., Al, C, Ni, Re, additional elements, etc.) included in the homogenous binder.

[0057] The portion of the homogeneous binder swept into the diamond powder 102 may promote the formation of a solid binder material having a modulated morphology, the modulated morphology including intermetallic phase precipitates and metallic phase precipitates within the interstices between the interbonded diamond particles of the PDC 112. The portion of the homogeneous binder remaining in the support substrate 104 may promote the formation of a solid binder material having a modulated morphology, the modulated morphology including intermetallic phase precipitates and metallic phase precipitates within the interstices between the particles of the carbide material. After the HPHT process, when the molten homogeneous binder cools and solidifies, a solid binder material having a modulated morphology is formed. Therefore, the solid binder material within the interstices between the interbonded diamond particles of the PDC 112 and / or within the interstices between the particles of the carbide material of the support substrate 104 may simultaneously exhibit a modulated morphology including a thermally stable intermetallic phase and a ductile metallic phase. The intermetallic phase precipitates and the metallic phase precipitates may provide the PDC 112 with thermal stability without the need to leach the PDC 112. However, in some embodiments, the solid binder material including intermetallic phase precipitates and metallic phase precipitates within the interstices of the PDC 112 may be at least partially leached from the PDC 112 .

[0058] The modulated morphology of the solid binder material may depend on the amount of Ni and / or Re in the homogeneous binder. When the molten homogeneous binder cools and solidifies, the Ni and / or Re in the homogeneous binder promote the formation of the eutectic binder structure by forming intermetallic phase precipitates and metallic phase precipitates simultaneously. The intermetallic phase precipitates may include Co(X)3Al(Y)C xprecipitates, wherein x is between 0.25 and 1, X may include at least one element capable of occupying a Co site (e.g., Ni), and Y may include at least one element capable of occupying an Al site (e.g., Re). The value of X may vary depending on the element X occupying the Co site. For example, when X includes Ni occupying the Co site of the intermetallic phase precipitate, Co(X)3Al(Y)C x The carbon solubility and x value of the precipitate are reduced, making Co(X)3Al(Y)C x The precipitate becomes richer in Al. Due to the presence of Ni, the carbon solubility of Co(X)3Al(Y)C is reduced. x The precipitates show a favorable improvement in ductility.The presence of Ni in the homogeneous binder also modifies the solidification process of the molten homogeneous binder, so that intermetallic phase precipitates and metallic phase precipitates are formed simultaneously when the homogeneous binder solidifies to form a solid binder material.

[0059] The presence of Re in the homogeneous binder also promotes the simultaneous formation of intermetallic phase precipitates and metallic phase precipitates during the solidification of the homogeneous binder. x The precipitates exhibit limited solubility and are therefore able to occupy the Co(X)3Al(Y)C x The amount of Re in the Al site of the precipitate is accordingly limited. x The amount of Re in the precipitates is limited, and since Re exhibits a high melting temperature of about 3182°C, excess Re promotes the metal phase including excess Re and the intermetallic Co(X)3Al(Y)C x The precipitates precipitate simultaneously, thereby forming a eutectic binder structure.

[0060] The eutectic binder structure of the solid binder material within the interstices of the PDC 112 and / or the interstices of the support substrate 104 may exhibit a modulated morphology in the form of flakes, dispersed precipitates, or a combination thereof. The flakes may include alternating flake plates (e.g., layers) of intermetallic phase precipitates and metallic phase precipitates. The thickness of the flake plates may be greater than, less than, or at least substantially equal to the grain size of the diamond particles of the PDC 112. The thickness of the flake plates may be greater than, less than, or at least substantially equal to the grain size of the carbide material in the support substrate 104. The dispersed precipitates may exhibit any desired shape, such as, for example, at least one of a spherical, cubic, hexahedral, ellipsoidal, cylindrical, conical, or irregular shape.

[0061] The cooling rate of the molten homogeneous binder can be varied (e.g., controlled, selected) to form a solid binder material having desired properties (e.g., thickness, size, etc.). For example, the thickness of the thin sheet can be increased by reducing the cooling rate. The thickness of the thin sheet can be reduced by increasing the cooling rate. The size of the dispersed precipitates can similarly be increased by reducing the cooling rate or reduced by increasing the cooling rate. The size (e.g., length, width, thickness) of the discrete phases (e.g., intermetallic phase precipitates and metallic phase precipitates) of the solid binder material, as measured by the line intercept method on a polished cross-section of the PDC 112 and / or the supporting substrate 104, may be in the range of about 20 nm to about 100 μm, such as in the range of 20 nm to about 50 nm, about 50 nm to about 75 μm, about 100 nm to about 50 μm, about 500 nm to about 20 μm, about 700 nm to about 10 μm, about 1 μm to about 100 μm, about 20 μm to about 100 μm, or about 50 μm to about 100 μm.

[0062] Figure 3A An electron image depicting the morphology of a Co-Ni-Al-C solid binder material including intermetallic phase precipitates and metallic phase precipitates according to an embodiment of the present disclosure is depicted. The darker portion of the image depicts the intermetallic phase precipitates, and the lighter portion of the image depicts the metallic phase precipitates. Figure 3A As shown, the Co-Ni-Al-C solid binder material includes intermetallic phase precipitates and thin flake plates of metallic phase precipitates.

[0063] Figure 3B An electron image depicting the morphology of a Co-Re-Al-C solid binder material including intermetallic phase precipitates and metallic phase precipitates according to an embodiment of the present disclosure. The darker portion of the image depicts the intermetallic phase precipitates, and the lighter portion of the image depicts the metallic phase precipitates. Figure 3B As shown, the Co-Re-Al-C solid binder material includes thin flakes of intermetallic phase precipitates and metallic phase precipitates and a mixture of dispersed intermetallic phase precipitates and metallic phase precipitates.

[0064] Figure 3C An electron image depicting the morphology of a Co-Ni-Re-Al-C solid binder material including intermetallic phase precipitates and metallic phase precipitates according to an embodiment of the present disclosure is depicted. The darker portion of the image depicts the intermetallic phase precipitates, and the lighter portion of the image depicts the metallic phase precipitates. Figure 3C As shown, the Co-Ni-Re-Al-C solid binder material includes thin flake plates of intermetallic phase precipitates and metallic phase precipitates and a mixture of dispersed intermetallic phase precipitates and metallic phase precipitates. Figure 3CThe Co-Ni-Re-Al-C solid binder material depicted in FIG. 1 may include a mixed morphology including a mixture of flaky plate characteristics and dispersed precipitate characteristics. As shown in the figure, the intermetallic phase precipitates and the metallic phase precipitates are FIG. 3A to FIG. 3C Each of the binder materials depicted in FIG. 1 is formed simultaneously, thereby producing the depicted modulation morphology.

[0065] Figure 3D An electron image of the fracture morphology of a cutting element including a Co-Ni-Al-C binder material including intermetallic phase precipitates and metallic phase precipitates after a fracture event according to an embodiment of the present disclosure is depicted. The Co-Ni-Al-C binder material exhibits ductile void coalescence during the fracture event, such as Figure 3D This is evidenced by the ridges depicted within the Co-Ni-Al-C binder material shown in . As previously mentioned, the presence of Ni in the binder material reduces the carbon solubility of the Co-Ni-Al-C binder material and modifies the intermetallic phase precipitates to be more ductile and exhibit a favorable deformation mechanism.

[0066] Figure 4 A partially cutaway perspective view of a cutting element 200 according to an embodiment of the present disclosure is depicted. The cutting element 200 may be constructed according to the previously described embodiments. FIG. 2A to FIG. 2B In some embodiments, the cutting table 202 (e.g., PDC) is formed in situ on the support substrate 204 during the HPHT process. The cutting element 200 and its components (e.g., the support substrate 204 and the cutting table 202) are at least substantially similar to those previously described with reference to FIG. 2A to FIG. 2B The cutting element 114 and its components (eg, support substrate 104 and PDC 112 ) are described in detail. The support substrate 204 is bonded together with the cutting table 202 to form the cutting element 200 .

[0067] The cutting element 200 Figure 4 200 as having a cylindrical column shape. However, in some embodiments, the cutting element 200 may have a different shape, such as, for example, a dome, a cone, a truncated cone, a rectangular column, a pyramid, a truncated pyramid, a fin, a strut, a stud, or an irregular shape. The interface region 206 between the support base 204 and the cutting table 202 is Figure 4206 as being at least substantially planar. However, in some embodiments, the interface region 206 is at least substantially non-planar (e.g., convex, concave, ridged, sinusoidal, angled, jagged, V-shaped, U-shaped, irregularly shaped, etc.). For example, the support substrate 204 may include one or more protrusions and / or one or more depressions at the interface region 206, and the PDC may include one or more corresponding complementary depressions and / or corresponding complementary protrusions at the interface region 206.

[0068] The thickness (e.g., height) extending from the exposed major surface of the support substrate 204 to the cutting face 208 of the cutting element 200 may be in the range of about 5 millimeters (mm) to about 25 mm, such as, for example, about 7 mm to about 20 mm or about 10 mm to about 15 mm. The thickness of the cutting face 208 extending from the interface region 206 to the cutting table 202 may be in the range of about 0.3 mm to about 10 mm, such as, for example, about 1 mm to about 5 mm or about 1.5 mm to about 4 mm. The thickness extending from the interface region 206 to the exposed major surface of the support substrate 204 may be in the range of about 0.7 mm to about 15 mm, such as, for example, about 1 mm to about 10 mm or about 3 mm to about 7 mm.

[0069] The support substrate 204 may be a substrate comprising FIG. 2A to FIG. 2B The solidified structure of the precursor composition. For example, the support substrate 204 can be a solidified structure comprising a carbide material dispersed in a homogeneous binder material, the homogeneous binder material comprising one or more of Ni and Re and Co, Al, and C. The homogeneous binder material of the support substrate 204 can include a solid binder material having a modulated morphology, the modulated morphology including intermetallic phase precipitates and metallic phase precipitates in the gaps between particles of the carbide material. Figure 4 However, support base 204 may have any suitable shape relative to the shape of cutting element 200.

[0070] Cutting table 202 Figure 4206, and the cutting element 200 is depicted as exhibiting a cylindrical cylindrical shape. However, the cutting table 202 may exhibit any suitable shape relative to the shape of the cutting element 200. The cutting table may exhibit at least one side surface 210, a cutting face 208 opposite the interface region 206, and at least one cutting edge 212 located at the periphery of the cutting face 208. The surfaces of the cutting table 202 adjacent to the cutting edge 212 (e.g., at least one side surface 210, the cutting face 208) may each be substantially planar, or one or more of the surfaces of the cutting table 202 adjacent to the cutting edge 212 may be at least partially non-planar. Each surface of the cutting table 202 may be polished, or one or more surfaces of the cutting table 202 may be at least partially unpolished. The cutting edge 212 of the cutting table 202 may be at least partially (e.g., substantially) chamfered (e.g., beveled), at least partially (e.g., substantially) rounded (e.g., arcuate), at least partially chamfered and partially rounded, or may be non-chamfered and non-rounded. In some embodiments, the cutting edge 212 is chamfered, such as Figure 4 The cutting edge 212 may include a single chamfer or may include multiple (eg, more than one) chamfers.

[0071] The cutting table 202 is a PDC formed by interbonded diamond particles. The cutting table 202 may include a solid binder material having a modulated morphology, the modulated morphology including intermetallic phase precipitates and metallic phase precipitates in the gaps between the interbonded diamond particles. In some embodiments, at least a portion of the solid binder material is leached from the cutting table 202 near the exposed outer surface of the cutting table 202. As previously described, the modulated morphology of the solid binder material may be in the form of flakes, dispersed precipitates, or a combination thereof. The intermetallic phase precipitates in the cutting table 202 are thermally stable, but exhibit high brittleness relative to the metallic phase precipitates. The metallic phase precipitates in the cutting table 202 exhibit desired ductility and durability, but poor thermal stability. The metallic phase precipitates of the solid binder material may be positioned in the gaps of the cutting table 202 so as to mitigate the brittleness of the intermetallic phase precipitates of the solid binder material. Thus, the cutting table 202 comprising a solid binder material having a modulated morphology is thermally stable, less brittle, less susceptible to shear, compressive, and tensile stresses, and more durable than a conventionally leached (e.g., partially leached or fully leached) cutting table.

[0072] Figure 5 is a perspective view of an earth-boring tool 300 including one or more cutting elements 302 (eg, cutting elements 114, 200) according to the present disclosure. Earth-boring tool 300 may include a body 304 to which cutting elements 302 may be secured. Figure 5The earth-boring tool 300 specifically depicted in the embodiment of the present invention is configured to be capable of being used as a fixed cutter earth-boring drill bit, which includes blades 306 protruding outwardly from the remainder of the body 304 and defining a chip flute 308 between adjacent rotating blades 306. In such embodiments, the cutting elements 302 may be partially fixed within pockets 310 in one or more blades extending into the blades 306 (e.g., portions of the blades 306 that are rotationally leading as the primary cutting elements 302, portions that rotationally follow as backup cutting elements 302, or both). However, the cutting elements 302 as described herein may be incorporated into and used on other types of earth-boring tools, including, for example, roller cone drill bits, impact drill bits, coring drill bits, eccentric drill bits, bi-center drill bits, reamers, expandable reamers, milling cutters, hybrid drill bits, and other drill bits and tools known in the art.

[0073] Embodiments of the present disclosure also include:

[0074] Embodiment 1: A method of forming a cutting element, the method comprising: providing a support substrate comprising a homogeneous binder, the homogeneous binder comprising one or more of Ni and Re and Co, Al, and C; depositing discrete diamond particles directly on the support substrate; sintering the support substrate and the discrete diamond particles to a temperature of about 1350°C or higher at a pressure of about 5 GPa or higher to diffuse a portion of the homogeneous binder into the discrete diamond particles and bond the discrete diamond particles to each other to form a cutting table attached to the support substrate; converting a portion of the homogeneous binder located in gaps between the bonded diamond particles into metallic phase precipitates and intermetallic phase precipitates comprising one or more of Ni and Re.

[0075] Embodiment 2: The method according to Embodiment 1, wherein the homogeneous binder comprises Co, Al, C, Ni and Re.

[0076] Embodiment 3: The method according to any one of Embodiments 1 or 2, wherein the metal phase precipitates contain Re.

[0077] Embodiment 4: A method according to any one of embodiments 1 to 3, wherein converting a portion of the homogeneous binder within the gaps between the mutually bonded diamond particles into metallic phase precipitates and intermetallic phase precipitates comprising one or more of Ni and Re comprises forming one or more of thin platelets and dispersed precipitates.

[0078] Embodiment 5: The method according to Embodiment 4, wherein forming one or more of lamellae and dispersed precipitates comprises forming alternating lamellae of the intermetallic phase precipitates and the metallic phase precipitates.

[0079] Embodiment 6: A method according to any one of embodiments 4 or 5, wherein forming one or more of thin plates and dispersed precipitates includes forming thin plates of the intermetallic phase precipitates, thin plates of the metallic phase precipitates, dispersed intermetallic phase precipitates and a mixture of dispersed metallic phase precipitates.

[0080] Embodiment 7: A method according to any one of embodiments 1 to 6, wherein converting a portion of the homogeneous binder within the gaps between the mutually bonded diamond particles into metallic phase precipitates and intermetallic phase precipitates comprising one or more of Ni and Re comprises simultaneously forming the intermetallic phase precipitates and the metallic phase precipitates.

[0081] Embodiment 8: The method of any one of Embodiments 1 to 7, wherein sintering the support substrate and the discrete diamond particles comprises sintering the support substrate and the discrete diamond particles at a pressure in a range of about 5.0 GPa to about 9.0 GPa.

[0082] Embodiment 9: A cutting element for an earth-boring tool, comprising: a cutting table comprising mutually bonded diamond grains and a binder material located in gaps between the mutually bonded diamond grains, the binder material comprising one or more of Ni and Re and Co, Al, C; and a supporting substrate attached to the cutting table, wherein the binder material comprises a mixture of intermetallic phase precipitates and metallic phase precipitates.

[0083] Embodiment 10: The cutting element of Embodiment 9, wherein the bond material comprises Co, Al, Co, Ni, and Re.

[0084] Embodiment 11: A cutting element according to any of Embodiments 9 or 10, wherein the intermetallic phase precipitates comprise Co(X)3Al(Y)C x A precipitate wherein x is between 0.25 and 1, X comprises at least one element configured to occupy a Co site, and Y comprises at least one element configured to occupy an Al site.

[0085] Embodiment 12: The cutting element of Embodiment 11, wherein X comprises Ni and Y comprises Re.

[0086] Embodiment 13: The cutting element according to any one of Embodiments 9 to 12, wherein the metallic phase precipitates comprise Re.

[0087] Embodiment 14: The cutting element of any of Embodiments 9 to 13, wherein the bond material comprises alternating thin plates of the intermetallic phase precipitates and the metallic phase precipitates.

[0088] Embodiment 15: The cutting element according to any one of Embodiments 9 to 14, wherein the binder material comprises the intermetallic phase precipitates and thin platelets of the metallic phase precipitates, dispersed intermetallic phase precipitates, and dispersed metallic phase precipitates.

[0089] The embodiments of the present disclosure described above and illustrated in the accompanying drawings do not limit the scope of the present disclosure, which is covered by the scope of the attached claims and their legal equivalents. Any equivalent embodiments are within the scope of the present disclosure. In fact, various modifications of the present disclosure other than those shown and described herein (such as alternative useful combinations of the described elements) will be apparent to those skilled in the art from the description. Such modifications and embodiments also fall within the scope of the attached claims and equivalents.

Claims

1. A method of forming a cutting element, the method comprising: providing a support substrate comprising a homogeneous binder, wherein the homogeneous binder comprises one or more of Ni and Re and Co, Al, and C; depositing discrete diamond particles directly onto the support substrate; sintering the support substrate and the discrete diamond particles to a temperature of about 1350° C. or more at a pressure of about 5 GPa or more to diffuse a portion of the homogeneous binder into the discrete diamond particles and to bond the discrete diamond particles to each other to form a cutting table attached to the support substrate; as well as A portion of the homogeneous binder is converted into metallic phase precipitates and intermetallic phase precipitates comprising one or more of Ni and Re.

2. The method of claim 1, wherein the homogeneous binder comprises Co, Al, C, Ni and Re. The method according to claim 1 , wherein the metal phase precipitates contain Re.

4. The method according to any one of claims 1 to 3, wherein converting the portion of the homogeneous binder into metallic phase precipitates and intermetallic phase precipitates comprising one or more of Ni and Re comprises forming one or more of flaky plates and dispersed precipitates.

5. The method of claim 4, wherein forming one or more of flaky plates and dispersed precipitates comprises forming alternating flaky plates of the intermetallic phase precipitates and the metallic phase precipitates.

6. The method of claim 4, wherein forming one or more of flaky plates and dispersed precipitates comprises forming a mixture of flaky plates of the intermetallic phase precipitates, flaky plates of the metallic phase precipitates, dispersed intermetallic phase precipitates, and dispersed metallic phase precipitates.

7. The method according to any one of claims 1 to 3, wherein converting the portion of the homogeneous binder into metallic phase precipitates and intermetallic phase precipitates comprising one or more of Ni and Re comprises forming the intermetallic phase precipitates and the metallic phase precipitates simultaneously.

8. The method of any one of claims 1 to 3, wherein sintering the support substrate and the discrete diamond particles comprises sintering the support substrate and the discrete diamond particles at a pressure in a range of about 5.0 GPa to about 9.0 GPa.

9. A cutting element for an earth-boring tool, the cutting element comprising: A cutting table comprising diamond particles bonded to each other and a binder material located in gaps between the diamond particles bonded to each other, the binder material comprising one or more of Ni and Re and Co, Al, and C; and a support substrate attached to the cutting table, The binder material comprises a mixture of intermetallic phase precipitates and metallic phase precipitates.

10. The cutting element of claim 9, wherein the bond material comprises Co, Al, Co, Ni, and Re.

11. The cutting element according to claim 9, wherein the intermetallic phase precipitates comprise Co(X)3Al(Y)C x A precipitate wherein x is between 0.25 and 1, X comprises at least one element configured to occupy a Co site, and Y comprises at least one element configured to occupy an Al site.

12. The cutting element of claim 11, wherein X comprises Ni and Y comprises Re.

13. The cutting element of claim 9, wherein the metallic phase precipitates contain Re.

14. The cutting element of any one of claims 9 to 12, wherein the bond material comprises alternating lamellae of the intermetallic phase precipitates and the metallic phase precipitates.

15. The cutting element of any one of claims 9 to 12, wherein the binder material comprises the intermetallic phase precipitates and flaky plates of the metallic phase precipitates, dispersed intermetallic phase precipitates and dispersed metallic phase precipitates.

Images