Method for separating diamond single crystals by laser

By forming a modified layer on the diamond single crystal and separating it with a lobster, the problems of diamond single crystals are fragile, low efficiency and ablation in traditional laser cutting technology are solved, and the cutting effect is efficient, non-fragmentable and without taper and ablation is achieved.

CN119566569AActive Publication Date: 2025-03-07INNER MONGOLIA JUNRUI TECHNOLOGY CO LTD

Patent Information

Application Number
CN202411924362.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-25
Publication Date
2025-03-07
Estimated Expiration
2044-12-25

AI Technical Summary

Technical Problem

Traditional laser cutting technology has problems such as fragility, low efficiency, taper on the cutting section and ablation marks on the upper and lower surfaces when cutting diamond single crystals.

Method used

The modified layer is formed on the single crystal diamond by picosecond laser, and the single crystal diamond is then separated along the modified layer by using a lobster.

Benefits of technology

It achieves the effect of high efficiency, non-fragmentation of the product, no taper on the cross-section and no ablation marks on the upper and lower surfaces.

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Abstract

The invention relates to a method for laser separation of diamond single crystals, and relates to the technical field of diamond cutting, a modified layer is formed on a single crystal diamond through picosecond laser, and then the single crystal diamond is separated along the modified layer through a splitting machine. The method has the advantages that the efficiency is high, the product is not easy to break, the section has no taper, and the upper surface and the lower surface have no ablation marks.
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Description

Technical Field

[0001] The present application relates to the technical field of diamond cutting, and in particular to a method for separating diamond single crystals by laser. Background Art

[0002] The principle of traditional laser cutting is that the diamond material is instantly vaporized under the irradiation of laser. Due to a series of advantages such as short laser action time, small spot, narrow cutting seam, etc., it is often used to cut large-sized single crystal diamonds. However, traditional laser cutting technology has problems such as fragility, low efficiency, tapered cutting section, and ablation marks on the upper and lower surfaces after cutting. Summary of the invention

[0003] In view of the shortcomings of the prior art, one of the purposes of the present application is to provide a method for laser separation of diamond single crystals, which has the advantages of high efficiency, non-fragile products, no taper in the cross section, and no ablation marks on the upper and lower surfaces.

[0004] The above-mentioned purpose of the present application is achieved through the following technical solutions:

[0005] A method for laser separation of diamond single crystals, wherein a modified layer is formed on the single crystal diamond by using a picosecond laser, and then the single crystal diamond is separated along the modified layer by a splitting machine.

[0006] By adopting the above technical solution, a modified layer is set and then the single crystal diamond is separated along the modified layer by a splitting machine, thereby achieving the goals of high efficiency, non-fragile products, no taper in the cross section, and no ablation marks on the upper and lower surfaces.

[0007] In a preferred example, the present application can be further configured as follows: the modified layer is multi-layered.

[0008] By adopting the above technical solution, the splitting machine can achieve better effect during splitting.

[0009] In a preferred example, the present application can be further configured as follows: the picosecond laser is a 1064 laser light source with a pulse width less than 15 picoseconds.

[0010] By adopting the above technical solution, the effect of forming the modified layer is better.

[0011] In a preferred example, the present application can be further configured as follows: laser frequency 100KHz, laser energy 1W, processing speed 200mm / s.

[0012] By adopting the above technical solution, the effect of forming the modified layer is better.

[0013] In a preferred example, the present application can be further configured as follows: when forming the modified layer, the laser forms the modified layer inside the single crystal diamond in a direction perpendicular to the surface of the single crystal diamond, the interlayer spacing of the modified layer is 50um, the layer power of the laser is attenuated by 3%, and the number of processed layers is 10.

[0014] By adopting the above technical solution, the effect of splitting can be better.

[0015] In a preferred example, the present application can be further configured as follows: the splitting machine includes a carrier platform, a negative pressure hole is provided on the carrier platform, and when the single crystal diamond is placed on the carrier platform, the single crystal diamond covers the negative pressure hole.

[0016] By adopting the above technical solution, the presence of the negative pressure hole can play a positioning effect on the single crystal diamond during use, thereby reducing the probability of the single crystal diamond shifting during the splitting process.

[0017] In a preferred example, the present application can be further configured as follows: a rubber layer for contacting the single crystal diamond is also provided on the support platform, the negative pressure hole penetrates the rubber layer, the rubber layer is provided with texture, and the single crystal diamond does not completely cover the texture.

[0018] By adopting the above technical solution, the presence of the texture can reduce the contact area between the single crystal diamond and the rubber layer, thereby facilitating the picking up of the single crystal diamond.

[0019] In a preferred example, the present application can be further configured as follows: after placing the single crystal diamond on the support table, suction is performed through the negative pressure hole. Under the action of air pressure, the single crystal diamond applies pressure to the rubber layer, causing the texture at the edge of the single crystal diamond to deform. When the position of the deformed texture meets the standard, the single crystal diamond is split.

[0020] By adopting the above technical solution, the single crystal diamond applies pressure to the rubber layer, so the lines at the edge will be deformed, and the position of the deformed lines is judged. If it meets the standard brick, it indicates that the position and specification of the single crystal diamond meet the composite requirements.

[0021] In a preferred example, the present application can be further configured as follows: after the splitting is completed, air is blown through the negative pressure hole to form an air film between the single crystal diamond and the rubber pad, and then the single crystal diamond is transferred.

[0022] By adopting the above technical solution, the difficulty of taking the single crystal diamond is reduced due to the existence of the air film. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the modified layer structure of this application.

[0024] Figure 2It is a schematic diagram of the top view structure of the support platform of this application.

[0025] Figure numerals: 1, modified layer; 2, supporting platform; 21, negative pressure hole; 22, texture. DETAILED DESCRIPTION

[0026] The present application is further described in detail below in conjunction with the accompanying drawings.

[0027] Reference Figure 1 and Figure 2 , which is a method for laser separation of diamond single crystals disclosed in the present application, forms a multi-layer modified layer 1 on the single crystal diamond by picosecond laser, and then separates the single crystal diamond along the modified layer 1 by a splitting machine.

[0028] The picosecond laser is a 1064 laser light source with a pulse width of less than 15 picoseconds, combined with a 50x cutting objective lens, a frequency of 100KHz, a laser energy of 1W, and a processing speed of 200mm / s.

[0029] When forming the modified layer 1, the laser forms the modified layer 1 inside the single crystal diamond in a direction perpendicular to the surface of the single crystal diamond. The interlayer spacing of the modified layer 1 is 50 um, the layer power of the laser is attenuated by 3%, and the number of processed layers is 10.

[0030] The splitting machine includes a carrier 2, a rubber layer is provided on the carrier 2, a negative pressure hole 21 penetrating the rubber layer is provided on the carrier 2, and radial lines 22 are provided on the rubber layer, and the extension line of the radial lines 22 passes through the center of the negative pressure hole 21. The lines 22 are groove-shaped and connected to the negative pressure hole 21. When the single crystal diamond is placed on the carrier 2, the single crystal diamond covers the negative pressure hole 21 but does not completely cover the lines 22.

[0031] After the single crystal diamond is placed on the support platform 2, suction is performed through the negative pressure hole 21. Under the action of air pressure, the single crystal diamond applies pressure to the rubber layer, causing the lines 22 at the edge of the single crystal diamond to deform. When the position of the deformed lines 22 meets the standard, the single crystal diamond is split. After the splitting is completed, air is blown through the negative pressure hole 21 to form an air film between the single crystal diamond and the rubber pad, and then the single crystal diamond is transferred.

[0032] When there is no deformation position of the lines 22 , it indicates that the negative pressure is insufficient or the single crystal diamond does not completely cover the negative pressure hole 21 .

[0033] The implementation principle of this embodiment is: a picosecond laser light source is used in conjunction with a 50x cutting objective lens. Under the action of the 50x cutting objective lens, the ultrashort pulse laser beam is highly focused and compressed in the space near the focus. The material in the focus area absorbs the high peak power of the laser, and a multi-photon absorption effect occurs, which excites electrons from the material to form free electrons. Subsequently, the Coulomb repulsion directly destroys the molecular bonds or atomic bonds that bind the material, the single crystal structure of the material shrinks, and the crystalline change produces micro-explosion points. The laser focus moves at high speed in the sample to form continuous and equally spaced cracks, thereby forming a modified layer 1 of a certain depth.

[0034] The embodiments of this specific implementation method are all preferred embodiments of the present application, and are not intended to limit the protection scope of the present application. Therefore, all equivalent changes made based on the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. A method for separating diamond single crystals by laser, characterized in that: A modified layer is formed on the single crystal diamond by a picosecond laser, and then the single crystal diamond is separated along the modified layer by a splitting machine.

2. The method for laser separation of diamond single crystals according to claim 1, characterized in that: The modified layer is multi-layer.

3. The method for laser separation of diamond single crystals according to claim 1, characterized in that: Picosecond laser is a 1064 laser light source with a pulse width of less than 15 picoseconds.

4. The method for laser separation of diamond single crystals according to claim 1, characterized in that: The laser frequency is 100KHz, the laser energy is 1W, and the processing speed is 200mm / s.

5. The method for separating diamond single crystals by laser according to claim 1, characterized in that: When forming the modified layer, the laser forms the modified layer inside the single crystal diamond in a direction perpendicular to the surface of the single crystal diamond. The interlayer spacing of the modified layer is 50um, the layer power of the laser is attenuated by 3%, and the number of processed layers is 10.

6. The method for separating diamond single crystals by laser according to claim 1, characterized in that: The splitting machine comprises a bearing platform, on which a negative pressure hole is arranged. When the single crystal diamond is placed on the bearing platform, the single crystal diamond covers the negative pressure hole.

7. The method for separating diamond single crystals by laser according to claim 6, characterized in that: The bearing platform is also provided with a rubber layer for contacting with the single crystal diamond, the negative pressure hole penetrates the rubber layer, the rubber layer is provided with textures, and the single crystal diamond does not completely cover the textures.

8. The method for separating diamond single crystals by laser according to claim 7, characterized in that: After placing the single crystal diamond on the support platform, suction is performed through the negative pressure hole. Under the action of air pressure, the single crystal diamond exerts pressure on the rubber layer, causing the texture at the edge of the single crystal diamond to deform. When the position of the deformed texture meets the standard, the single crystal diamond is split.

9. The method for separating diamond single crystals by laser according to claim 8, characterized in that: After the splitting is completed, air is blown through the negative pressure hole to form an air film between the single crystal diamond and the rubber pad, and then the single crystal diamond is transferred.

Citation Information

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