Preparation method of indium tungsten oxide target material

Abstract

The invention discloses a preparation method of an indium tungsten oxide target material, and belongs to the technical field of target materials, the preparation method comprises the following steps: carrying out ball milling on tungsten oxide powder, uniformly mixing a first dispersing agent with indium oxide powder, grinding, uniformly mixing with the tungsten oxide powder and a second dispersing agent, uniformly mixing with a binder, carrying out spray drying granulation, carrying out dry pressing, and carrying out cold isostatic pressing to obtain the indium tungsten oxide target material. And finally, performing degreasing treatment and sintering to obtain the indium tungsten oxide target material with high relative density and high shrinkage rate.

Description

Technical Field

[0001] The invention relates to the technical field of target materials, and in particular to a method for preparing an indium tungsten oxide target material. Background Art

[0002] Target materials are basic consumables in the magnetron sputtering process. Not only are they used in large quantities, but the quality of the targets also plays a crucial role in determining the performance of the film. Target materials have a wide range of applications, mainly including optical targets, targets for display films, targets for semiconductors, targets for recording media, superconducting targets, etc. Among them, targets for semiconductors, targets for displays, and targets for recording media are the three most widely used targets. In order to increase the rate of film preparation and ensure the growth quality of the film, sputtering targets must meet certain index requirements. In recent years, flat panel display technologies such as liquid crystal displays, active organic light-emitting diode displays, and flexible displays have developed rapidly, and the importance of thin film transistors (TFTs) as core components is self-evident. Among them, TFTs based on oxide semiconductors have attracted widespread attention for their advantages such as higher mobility, good electrical uniformity, high visible light transmittance, lower preparation temperature, and lower cost.

[0003] Tungsten oxide is one of the most studied inorganic electrochromic materials due to its multiple oxidation states, high coloring efficiency and good stability. Studies have shown that the electrochromic properties of tungsten oxide thin films are closely related to their structure, including geometry, grain size, crystallinity, etc. It is generally believed that crystalline tungsten oxide thin films have significant cyclic stability, but a low light modulation range; while the amorphous state shows the opposite characteristics - a larger light modulation range but poor cyclic stability, and the amorphous state of tungsten oxide has higher coloring efficiency and faster conversion time than the crystalline state. It has been reported that amorphous tungsten oxide and crystalline tungsten oxide have a synergistic effect, and the surface of the two-phase layer film is rough, showing excellent electrochromic properties. On the other hand, the application of tungsten oxide in various fields such as chemistry, mechanical sensors, selective catalysis, electrochemical industry and environmental engineering has attracted widespread attention. Tungsten trioxide (WO3) is an n-type semiconductor with a wide direct band gap (3.2eV), very high chemical stability and high conductivity, as well as the ability to resist high temperatures. Studies have shown that crystalline WO3 has high chemical stability against dissolution during the anodic oxidation process and can be used as a promising electrode material for wastewater treatment. At the same time, the photoactive crystal structure of WO3 thin film makes it suitable for the application of ultraviolet (UV) photodetectors (PD). The current relative density and shrinkage rate of indium tungsten oxide targets are low, which limits their application.

[0004] In view of this, this application is filed. Summary of the invention

[0005] The purpose of the present invention is to overcome the shortcomings of the prior art and provide a method for preparing an indium oxide tungsten target. The indium oxide tungsten target prepared by the present invention has high relative density and high shrinkage rate.

[0006] To achieve the above object, the technical solution adopted by the present invention is:

[0007] A method for preparing an indium tungsten oxide target comprises the following steps:

[0008] (1) Weigh tungsten oxide powder and indium oxide powder and set aside;

[0009] (2) ball milling tungsten oxide powder;

[0010] (3) adding the first dispersant to water, stirring evenly, then adding indium oxide powder, stirring evenly, and grinding to obtain a first slurry;

[0011] (4) adding the ball-milled tungsten oxide powder to the first slurry, stirring evenly, then adding the second dispersant, stirring evenly, and grinding to obtain a second slurry;

[0012] (5) adding a binder to the second slurry, stirring and grinding to obtain a third slurry;

[0013] (6) spray-drying and granulating the third slurry to obtain a precursor;

[0014] (7) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, and the target embryo is subjected to degreasing treatment and sintering in turn to obtain an indium oxide tungsten target.

[0015] The present invention firstly ball-mills tungsten oxide powder, then uniformly mixes a first dispersant with indium oxide powder, grinds, uniformly mixes with tungsten oxide powder and a second dispersant, and then uniformly mixes with a binder, spray-dries and granulates, dry-presses and cold isostatically presses, and finally degreases and sinters to obtain an indium oxide tungsten target with high relative density and high shrinkage.

[0016] As a preferred embodiment of the present invention, the mass ratio of the tungsten oxide powder to the indium oxide powder is (1-5):(95-99).

[0017] As a preferred embodiment of the present invention, the ball milling medium in step (2) is a cemented carbide ball milling rod, the ball-to-material ratio is (1-5):1, the ball milling speed is 30-40 rpm, the ball milling time is 2-6 h, and the D90 of the tungsten oxide powder after ball milling is ≤10 μm.

[0018] As a preferred embodiment of the present invention, D90 of the tungsten oxide powder after ball milling is ≤8 μm.

[0019] In the prior art, tungsten oxide and indium oxide are usually sanded with zirconium oxide. However, the hardness of tungsten oxide is higher than that of zirconium oxide, so it cannot achieve a good grinding effect. In this case, cemented carbide is used as the grinding body, which can better grind tungsten oxide.

[0020] As a preferred embodiment of the present invention, in step (3), the mass ratio of the first dispersant to indium oxide is (0.001-0.05):1.

[0021] As a preferred embodiment of the present invention, in step (4), the mass ratio of tungsten oxide powder to the second dispersant is 1:(0.001-0.05).

[0022] As a preferred embodiment of the present invention, the first dispersant and the second dispersant independently include at least one of polyvinyl pyrrolidone, sodium dodecylbenzene sulfonate, a polycarboxylic acid compound, a polyacrylate, and sodium hexadecylbenzene sulfonate.

[0023] As a preferred embodiment of the present invention, the binder is 5 to 20% of the total amount of tungsten oxide powder, indium oxide powder, and the binder;

[0024] The binder includes at least one of polyvinyl alcohol, polyethylene glycol, and polyvinyl butyral.

[0025] As a preferred embodiment of the present invention, the spray granulation is carried out in a co-current spray drying tower with an outlet air temperature of 70-85° C. and a frequency of 120 Hz.

[0026] As a preferred embodiment of the present invention, the degreasing temperature is 400-600° C., and the degreasing time is 1-3 hours.

[0027] As a preferred embodiment of the present invention, the sintering is carried out in an oxygen atmosphere, the oxygen flow rate is 30 to 50 L / min, the sintering temperature is 1450 to 1600° C., and the sintering time is 8 to 12 hours.

[0028] As a preferred embodiment of the present invention, the stirring rate in step (3) is 50 to 150 rpm.

[0029] As a preferred embodiment of the present invention, the grinding rate in step (3) is 800-1600 rpm and the grinding time is 5-9 hours.

[0030] As a preferred embodiment of the present invention, the stirring rate in step (4) is 50 to 150 rpm.

[0031] As a preferred embodiment of the present invention, the grinding rate in step (4) is 800-1600 rpm and the grinding time is 0.5-1 h.

[0032] As a preferred embodiment of the present invention, the stirring rate in step (5) is 50 to 150 rpm.

[0033] As a preferred embodiment of the present invention, the grinding rate in step (5) is 800-1600 rpm and the grinding time is 0.5-1 h.

[0034] The beneficial effects of the present invention are as follows: the present invention firstly ball-mills the tungsten oxide powder, then uniformly mixes the first dispersant and the indium oxide powder, grinds, then uniformly mixes with the tungsten oxide powder and the second dispersant, and then uniformly mixes with the binder, spray-dries and granulates, dry-presses and cold isostatically presses, and finally degreases and sinters to obtain an indium oxide tungsten target with high relative density and high shrinkage rate. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application are described clearly and completely below. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application.

[0036] In the present application, the technical features described in an open manner include closed technical solutions composed of the listed features, and also include open technical solutions containing the listed features.

[0037] In this application, when it comes to numerical ranges, unless otherwise specified, the above numerical ranges are deemed to be continuous and include the minimum and maximum values ​​of the range, as well as each value between such minimum and maximum values. Further, when a range refers to an integer, each integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe features or characteristics, the ranges can be merged. In other words, unless otherwise specified, all ranges disclosed herein should be understood to include any and all subranges included therein.

[0038] In the present application, there is no particular limitation on the specific dispersion and stirring treatment methods.

[0039] Unless otherwise specified, the components, raw materials or instruments used in the embodiments and comparative examples of the present invention are all commercially available raw materials or instruments, and the components and raw materials used in each parallel experiment are all of the same kind.

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0041] The following examples are provided to facilitate understanding of the present invention. These examples are not provided to limit the scope of the claims.

[0042] Example 1

[0043] A method for preparing an indium tungsten oxide target comprises the following steps:

[0044] (1) Weigh tungsten oxide powder and indium oxide powder in a mass ratio of 3:97 and set aside;

[0045] (2) The tungsten oxide powder was added into a ball mill for ball milling. The ball milling medium was a carbide ball milling rod with a size of 10 mm*15 mm. The ball-to-material ratio was 3:1, the ball milling speed was 36 rpm, and the ball milling time was 4 h. After ball milling, the D90 of the tungsten oxide powder was 6.195 μm.

[0046] (3) PVP was added to water, stirred at 100 rpm for 30 min, and then indium oxide powder was added, stirred at 100 rpm for 30 min, and then the mixture was pumped into a sand mill for grinding using a pneumatic diaphragm pump. The grinding speed was 1500 rpm and the grinding time was 6 h to obtain a first slurry. The D90 of indium oxide in the first slurry was 1.484 μm.

[0047] Among them, the mass ratio of PVP, water and indium oxide powder is 0.5:30:69.5.

[0048] (4) adding the ball-milled tungsten oxide powder to the first slurry, stirring at 100 rpm for 30 min, then adding PVP, stirring at 100 rpm for 30 min, and grinding in a sand mill with a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a second slurry; the mass ratio of PVP to tungsten oxide powder is 0.04:1;

[0049] (5) PVA was added to the second slurry, stirred at a speed of 100 rpm for 30 min, and then pumped into a sand mill for grinding using a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a third slurry;

[0050] The amount of PVA added is 10% of the total amount of tungsten oxide powder, indium oxide powder and PVA;

[0051] (6) The third slurry is fed into a spray drying tower for spray granulation, and then mixed and sieved to obtain an indium oxide tungsten mixed powder. The air outlet temperature is 75° C. and the atomizer frequency is 120 Hz.

[0052] (7) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, which is then degreased at 500°C for 2 hours; oxygen is introduced at a rate of 40 L / min and sintered at 1500°C for 8 hours to obtain an indium tungsten oxide target.

[0053] The relative density of the indium tungsten oxide target material in this embodiment is 6.964 g / cm 3 , the target material shrinkage rate is 14.68%.

[0054] Example 2

[0055] A method for preparing an indium tungsten oxide target comprises the following steps:

[0056] (1) Weigh tungsten oxide powder and indium oxide powder in a mass ratio of 3:97 and set aside;

[0057] (2) The tungsten oxide powder was added into a ball mill for ball milling. The ball milling medium was a carbide ball milling rod with a size of 5.5 mm*15 mm. The ball-to-material ratio was 3:1, the ball milling speed was 36 rpm, and the ball milling time was 4 h. After ball milling, the D90 of the tungsten oxide powder was 5.724 μm.

[0058] (3) PVP was added to water, stirred at 100 rpm for 30 min, and then indium oxide powder was added, stirred at 100 rpm for 30 min, and then the mixture was pumped into a sand mill for grinding using a pneumatic diaphragm pump. The grinding speed was 1500 rpm and the grinding time was 6 h to obtain a first slurry. The D90 of indium oxide in the first slurry was 1.491 μm.

[0059] Among them, the mass ratio of PVP, water and indium oxide powder is 0.5:30:69.5.

[0060] (4) adding the ball-milled tungsten oxide powder to the first slurry, stirring at 100 rpm for 30 min, then adding PVP, stirring at 100 rpm for 30 min, and grinding in a sand mill with a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 2 h to obtain a second slurry; the mass ratio of PVP to tungsten oxide powder is 0.04:1;

[0061] (5) PVA was added to the second slurry, stirred at a speed of 100 rpm for 30 min, and then pumped into a sand mill for grinding using a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a third slurry;

[0062] The amount of PVA added is 10% of the total amount of tungsten oxide powder, indium oxide powder and PVA;

[0063] (6) The third slurry is fed into a spray drying tower for spray granulation, and then mixed and sieved to obtain an indium oxide tungsten mixed powder. The air outlet temperature is 75° C. and the atomizer frequency is 120 Hz.

[0064] (7) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, which is then degreased at 500°C for 2 hours; oxygen is introduced at a rate of 40 L / min and sintered at 1500°C for 8 hours to obtain an indium tungsten oxide target.

[0065] The relative density of the indium tungsten oxide target material in this embodiment is 6.971 g / cm 3 , the target material shrinkage rate is 14.73%.

[0066] Example 3

[0067] A method for preparing an indium tungsten oxide target comprises the following steps:

[0068] (1) Weigh tungsten oxide powder and indium oxide powder in a mass ratio of 3:97 and set aside;

[0069] (2) The tungsten oxide powder was added into a ball mill for ball milling. The ball milling medium was a carbide ball milling rod with a size of 5.5 mm*15 mm. The ball-to-material ratio was 3:1, the ball milling speed was 36 rpm, and the ball milling time was 4 h. After ball milling, the D90 of the tungsten oxide powder was 5.797 μm.

[0070] (3) PVP was added to water, stirred at 100 rpm for 30 min, and then indium oxide powder was added, stirred at 100 rpm for 30 min, and then the mixture was put into a sand mill for grinding using a pneumatic diaphragm pump. The grinding speed was 1500 rpm and the grinding time was 6 h to obtain a first slurry. The D90 of indium oxide in the first slurry was 1.488 μm.

[0071] Among them, the mass ratio of PVP, water and indium oxide powder is 0.5:30:69.5.

[0072] (4) adding the ball-milled tungsten oxide powder to the first slurry, stirring at 100 rpm for 30 min, then adding PVP, stirring at 100 rpm for 30 min, and grinding in a sand mill with a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a second slurry; the mass ratio of PVP to tungsten oxide powder is 0.04:1;

[0073] (5) PVA was added to the second slurry, stirred at a speed of 100 rpm for 30 min, and then pumped into a sand mill for grinding using a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a third slurry;

[0074] The amount of PVA added is 10% of the total amount of tungsten oxide powder, indium oxide powder and PVA;

[0075] (6) The third slurry is fed into a spray drying tower for spray granulation, and then mixed and sieved to obtain an indium oxide tungsten mixed powder. The air outlet temperature is 75° C. and the atomizer frequency is 120 Hz.

[0076] (7) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, which is then degreased at 500°C for 2 hours; oxygen is introduced at a rate of 40 L / min and sintered at 1500°C for 8 hours to obtain an indium tungsten oxide target.

[0077] The relative density of the indium tungsten oxide target material in this embodiment is 6.966 g / cm 3 , the target material shrinkage rate is 14.71%.

[0078] Example 4

[0079] The difference between Example 4 and Example 1 is that in step (1) of Example 4, the mass ratio of tungsten oxide powder to indium oxide powder is 1:99, and other conditions are the same.

[0080] The relative density of the indium oxide tungsten target material in this embodiment is 6.963 g / cm 3 , the target material shrinkage rate is 14.66%.

[0081] Example 5

[0082] The difference between Example 5 and Example 1 is that in step (1) of Example 4, the mass ratio of tungsten oxide powder to indium oxide powder is 5:95, and other conditions are the same.

[0083] The relative density of the indium tungsten oxide target material in this embodiment is 6.961 g / cm 3 , the target material shrinkage rate is 14.65%.

[0084] Comparative Example 1

[0085] A method for preparing an indium tungsten oxide target comprises the following steps:

[0086] (1) Weigh tungsten oxide powder and indium oxide powder in a mass ratio of 3:97 and set aside;

[0087] (2) PVP was added to water, stirred at 100 rpm for 30 min, and then indium oxide powder was added, stirred at 100 rpm for 30 min, and then the mixture was pumped into a sand mill for grinding using a pneumatic diaphragm pump. The grinding speed was 1500 rpm and the grinding time was 4 h to obtain a first slurry. The D90 of indium oxide in the first slurry was 14.879 μm.

[0088] Among them, the mass ratio of PVP, water and indium oxide powder is 0.5:30:69.5.

[0089] (3) adding the ball-milled tungsten oxide powder to the first slurry, stirring at 100 rpm for 30 min, then adding PVP, stirring at 100 rpm for 30 min, and grinding in a sand mill with a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a second slurry; the mass ratio of PVP to tungsten oxide powder is 0.04:1;

[0090] (4) PVA was added to the second slurry, stirred at a speed of 100 rpm for 30 min, and then pumped into a sand mill for grinding with a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a third slurry;

[0091] The amount of PVA added is 10% of the total amount of tungsten oxide powder, indium oxide powder and PVA;

[0092] (5) The third slurry is fed into a spray drying tower for spray granulation, and then mixed and sieved to obtain an indium oxide tungsten mixed powder. The air outlet temperature is 75° C. and the atomizer frequency is 120 Hz.

[0093] (6) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, which is then degreased at 500°C for 2 hours; oxygen is introduced at a rate of 40 L / min and sintered at 1500°C for 8 hours to obtain an indium tungsten oxide target.

[0094] The relative density of the indium oxide tungsten target material in this embodiment is 6.059 g / cm 3 , the target material shrinkage rate is 4.37%.

[0095] Comparative Example 2

[0096] A method for preparing an indium tungsten oxide target comprises the following steps:

[0097] (1) Weigh tungsten oxide powder and indium oxide powder in a mass ratio of 3:97 and set aside;

[0098] (2) The tungsten oxide powder was added into a ball mill for ball milling. The ball milling medium was a zirconium oxide ball milling rod with a size of Φ15 mm. The ball-to-material ratio was 3:1, the ball milling speed was 36 rpm, and the ball milling time was 4 h. After ball milling, the D90 of the tungsten oxide powder was 12.986 μm.

[0099] (3) PVP was added to water, stirred at 100 rpm for 30 min, indium oxide powder was added, stirred at 100 rpm for 30 min, and the mixture was put into a sand mill for grinding with a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 6 h to obtain a first slurry;

[0100] Among them, the mass ratio of PVP, water and indium oxide powder is 0.5:30:69.5.

[0101] (4) adding the ball-milled tungsten oxide powder to the first slurry, stirring at 100 rpm for 30 min, then adding PVP, stirring at 100 rpm for 30 min, and grinding in a sand mill with a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a second slurry; the mass ratio of PVP to tungsten oxide powder is 0.04:1;

[0102] (5) PVA was added to the second slurry, stirred at a speed of 100 rpm for 30 min, and then pumped into a sand mill for grinding using a pneumatic diaphragm pump at a grinding speed of 1500 rpm for 1 h to obtain a third slurry;

[0103] The amount of PVA added is 10% of the total amount of tungsten oxide powder, indium oxide powder and PVA;

[0104] (6) The third slurry is fed into a spray drying tower for spray granulation, and then mixed and sieved to obtain an indium oxide tungsten mixed powder. The air outlet temperature is 75° C. and the atomizer frequency is 120 Hz.

[0105] (7) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, which is then degreased at 500°C for 2 hours; oxygen is introduced at a rate of 40 L / min and sintered at 1500°C for 8 hours to obtain an indium tungsten oxide target.

[0106] The relative density of the indium oxide tungsten target material in this embodiment is 6.106 g / cm 3 , the target material shrinkage rate is 5.08%.

[0107] Comparative Example 3

[0108] A method for preparing an indium tungsten oxide target comprises the following steps:

[0109] (1) Weigh tungsten oxide powder and indium oxide powder in a mass ratio of 3:97 and set aside;

[0110] (2) The tungsten oxide powder was added into a ball mill for ball milling. The ball milling medium was a carbide ball milling rod with a size of 10 mm*15 mm. The ball-to-material ratio was 3:1, the ball milling speed was 36 rpm, and the ball milling time was 4 h. After ball milling, the D90 of the tungsten oxide powder was 6.195 μm.

[0111] (3) PVP was added to water and stirred at 100 rpm for 30 min. Then indium oxide powder, tungsten oxide powder and PVA were added and stirred at 100 rpm for 30 min. The mixture was pumped into a sand mill with a pneumatic diaphragm pump for grinding at a grinding speed of 1500 rpm for 6 h to obtain a first slurry. The D90 of indium oxide in the first slurry was 1.484 μm.

[0112] Among them, the mass ratio of PVP, water and indium oxide powder is 0.5:30:69.5.

[0113] The amount of PVA added is 10% of the total amount of tungsten oxide powder, indium oxide powder and PVA;

[0114] (4) The first slurry is injected into a spray drying tower for spray granulation, and then mixed and sieved to obtain an indium oxide tungsten mixed powder. The air outlet temperature is 75° C. and the atomizer frequency is 120 Hz.

[0115] (5) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, and the target embryo is degreased at 500° C. for 2 hours; oxygen is introduced at a rate of 40 L / min and sintered at 1500° C. for 8 hours to obtain an indium tungsten oxide target.

[0116] The relative density of the indium oxide tungsten target material in this embodiment is 6.64 g / cm 3 , the target material shrinkage rate is 9.14%.

[0117] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit the scope of protection of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the essence and scope of the technical solution of the present invention.

Claims

1. A method for preparing an indium tungsten oxide target, characterized in that: The following steps are involved: (1) Weigh tungsten oxide powder and indium oxide powder and set aside; (2) ball milling tungsten oxide powder; (3) adding the first dispersant to water, stirring evenly, then adding indium oxide powder, stirring evenly, and grinding to obtain a first slurry; (4) adding the ball-milled tungsten oxide powder to the first slurry, stirring evenly, then adding the second dispersant, stirring evenly, and grinding to obtain a second slurry; (5) adding a binder to the second slurry, stirring and grinding to obtain a third slurry; (6) spray-drying and granulating the third slurry to obtain a precursor; (7) The precursor is subjected to dry pressing and cold isostatic pressing to obtain a target embryo, and the target embryo is subjected to degreasing treatment and sintering in turn to obtain an indium oxide tungsten target.

2. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: The mass ratio of the tungsten oxide powder to the indium oxide powder is (1-5): (95-99).

3. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: The ball milling medium in step (2) is a cemented carbide ball milling rod, the ball-to-material ratio is (1-5):1, the ball milling speed is 30-40 rpm, the ball milling time is 2-6 hours, and the D90 of the tungsten oxide powder after ball milling is ≤10 μm.

4. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: In step (3), the mass ratio of the first dispersant to indium oxide is (0.001-0.05):

1.

5. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: In step (4), the mass ratio of tungsten oxide powder to the second dispersant is 1:(0.001-0.05).

6. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: The first dispersant and the second dispersant independently include at least one of polyvinyl pyrrolidone, sodium dodecylbenzene sulfonate, a polycarboxylic acid compound, a polyacrylate, and sodium hexadecylbenzene sulfonate.

7. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: The binder is 5 to 20% of the total amount of tungsten oxide powder, indium oxide powder and binder; The binder includes at least one of polyvinyl alcohol, polyethylene glycol, and polyvinyl butyral.

8. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: The spray granulation is carried out in a parallel flow spray drying tower, with an outlet air temperature of 70-85° C. and a frequency of 120 Hz.

9. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: The degreasing temperature is 400-600° C., and the degreasing time is 1-3 hours.

10. The method for preparing an indium tungsten oxide target according to claim 1, characterized in that: The sintering is carried out in an oxygen atmosphere, the oxygen flow rate is 30-50 L / min, the sintering temperature is 1450-1600° C., and the sintering time is 8-12 hours.