Rapid modeling method and device for power diode real-time model

Abstract

The invention discloses a rapid modeling method and device for a real-time model of a power diode. The method and device are used for solving the technical problem that behavioral modeling and real-time simulation requirements cannot be met in the absence of semiconductor physical parameters in related technologies. The method comprises the following steps: connecting a two-node model with a power diode as a behavior model of the power diode, and accessing a main circuit of a power system; the circuit form of the behavior model comprises a turn-off circuit, and the turn-off stage of the turn-off circuit comprises a first turn-off circuit stage and a second turn-off circuit stage; in the first turn-off circuit stage, the turn-off circuit is controlled to adopt a circuit form that a large resistor is connected in parallel with a controllable current source, and a controllable current source output value corresponding to the first turn-off circuit stage is calculated; and when the turn-off stage of the turn-off circuit is converted from the first turn-off circuit stage to the second turn-off circuit stage, the controllable current source is controlled to be set to zero. Therefore, in the absence of semiconductor physical parameters, behavior-level modeling and real-time simulation requirements can be met.

Description

Technical Field

[0001] The present invention relates to the field of power simulation technology, and in particular to a fast modeling method for a power diode real-time model, a fast modeling device for a power diode real-time model, an electronic device and a storage medium. Background Art

[0002] In the early 1950s, power diodes (then called semiconductor rectifiers) began to be put into use. Their basic structure and working principle are consistent with the diodes in information electronic circuits. Both are based on semiconductor PN junctions to achieve the functions of forward conduction and reverse cutoff. Power diodes are uncontrollable devices. Their conduction and shutdown are completely determined by the voltage and current they withstand in the main circuit. System devices using power diode devices are widely used in household appliances. They are also used in high-end industries such as rail transportation, smart grids, aerospace, ship drives, new energy, and electric vehicles.

[0003] The power diode model involves the interaction of multiple physical fields such as electricity, magnetism, heat, and force. Multi-physics modeling and analysis are important tools for studying thermal management, electromagnetic compatibility, and mechanical fatigue. However, for ordinary users, only the data sheet of the power diode equipment provided by the manufacturer can be obtained. The data sheet does not provide very specific data such as specific material parameters and doping concentration, which causes great confusion and difficulty for users to use multi-physics modeling tools.

[0004] Traditional power diode circuit simulation mainly uses analytical models, behavioral models, and numerical models. Among them, the analytical model is based on the physical principles of the device and establishes a model that can accurately describe the steady-state and transient operation of the device. However, this method is computationally intensive and difficult to achieve real-time simulation. The behavioral model provides a good prediction of the device performance, but ignores the detailed physical characteristics. The numerical model can simulate the electrical, thermal, and optical characteristics of the device using the finite element method without manufacturing the physical device, but the calculation is very time-consuming.

[0005] Generally speaking, the behavioral model is the best model in terms of real-time performance among these models. It also uses the least computing resources. Other models consume a lot of resources and execution time. However, if the behavioral model is used to model power diodes, it will not meet the needs of behavioral modeling and real-time simulation in the absence of semiconductor physical parameters because it ignores the detailed physical characteristics. Summary of the invention

[0006] The present invention provides a method for quickly modeling a real-time model of a power diode, a device for quickly modeling a real-time model of a power diode, an electronic device and a storage medium, which are used to solve or partially solve the technical problem in related technologies that the requirements of behavioral level modeling and real-time simulation cannot be met in the absence of semiconductor physical parameters.

[0007] The present invention provides a method for quickly modeling a real-time model of a power diode, the method comprising:

[0008] A two-node model is used to connect a power diode as a behavior model of the power diode, and connected to a main circuit of a power system; the circuit form of the behavior model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage;

[0009] In the first shutdown circuit stage, the shutdown circuit is controlled to adopt a circuit form of a large resistor in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first shutdown circuit stage is calculated:

[0010] When the shutdown phase of the shutdown circuit changes from the first shutdown circuit phase to the second shutdown circuit phase, the control sets the controllable current source to zero.

[0011] Optionally, the calculating the output value of the controllable current source corresponding to the first circuit shut-down stage includes:

[0012] Obtaining the maximum value of the reverse recovery current, the total amount of reverse recovery charge, and the first stage recovery time from the zero-crossing point to the maximum value of the reverse recovery current of the power diode;

[0013] Calculating a reverse recovery time according to the maximum reverse recovery current and the total reverse recovery charge;

[0014] Based on the reverse recovery time, combined with the first stage recovery time, the second stage recovery time is inferred; the second stage recovery time is the time for the power diode to extend from the maximum value of the reverse recovery current to the straight line connected with the 25% point of the maximum value of the reverse recovery current to the zero crossing point;

[0015] According to the second stage recovery time, combined with the reverse first-order process analysis, the controllable current source output value corresponding to the first circuit shutdown stage is calculated.

[0016] Optionally, the calculating the controllable current source output value corresponding to the first circuit shut-off stage according to the second stage recovery time in combination with reverse first-order process analysis includes:

[0017] According to the second stage recovery time, based on the first-order characteristics of reverse recovery, reversely derive the first-order time constant corresponding to the first circuit-off stage;

[0018] According to the first-order time constant and in combination with a preset expected value of the controllable current source, an output value of the controllable current source corresponding to the first circuit-off stage is calculated.

[0019] Optionally, the controllable current source output value is calculated by the following formula:

[0020]

[0021] in, Represents the output value of the controllable current source; represents a preset expected value of a controllable current source; represents the first-order time constant; Represents a bilinear transformation ; Indicates the sampling period; Represents the z-transform.

[0022] Optionally, after the power diode starts to shut down from the normal operating point, the shutdown circuit enters the first shutdown circuit stage;

[0023] The change process of the diode current corresponding to the first circuit-off stage is:

[0024] The diode current undergoes a current reversal dynamic change in a straight line downward form;

[0025] When the diode current passes through the zero point, the reverse recovery time starts to be accumulated until the straight line connecting the maximum value of the reverse recovery current and the point of 25% of the maximum value of the reverse recovery current is extended to the zero point;

[0026] After reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decay state of first-order current change.

[0027] Optionally, the method for quickly modeling the power diode real-time model further includes:

[0028] When the reverse recovery current of the power diode decays to a point close to zero, the shutdown phase of the shutdown circuit changes from the first shutdown circuit phase to the second shutdown circuit phase.

[0029] Optionally, the circuit form of the behavioral model further includes an on-state circuit, and the on-state circuit is in the form of a resistor in parallel with a controllable current source.

[0030] The present invention also provides a rapid modeling device for a power diode real-time model, comprising:

[0031] A behavior model building unit is used to connect a power diode using a two-node model as a behavior model of the power diode, and connect to a main circuit of a power system; the circuit form of the behavior model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage;

[0032] The first shutdown circuit stage control unit is used to control the shutdown circuit to adopt a circuit form of a large resistor in parallel with a controllable current source in the first shutdown circuit stage, and calculate the output value of the controllable current source corresponding to the first shutdown circuit stage:

[0033] The second shutdown circuit stage control unit is used to control the controllable current source to be set to zero when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage.

[0034] The present invention also provides an electronic device, the device comprising a processor and a memory:

[0035] The memory is used to store program code and transmit the program code to the processor;

[0036] The processor is used to execute the fast modeling method of the power diode real-time model as described in any one of the above items according to the instructions in the program code.

[0037] The present invention also provides a computer-readable storage medium, wherein the computer-readable storage medium is used to store program code, and the program code is used to execute the fast modeling method of the real-time model of a power diode as described in any one of the above items.

[0038] It can be seen from the above technical solutions that the present invention has the following advantages:

[0039] A fast modeling method for a real-time model of a power diode is provided. A two-node model is used to connect the power diode, which is used as a behavioral model of the power diode and connected to the main circuit of the power system; the circuit form of the behavioral model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage; in the first shutdown circuit stage, the shutdown circuit is controlled to adopt a circuit form of a large resistor in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first shutdown circuit stage is calculated; when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage, the controllable current source is set to zero. By adopting the technical solution provided by the present invention, by building a "two-node model + power diode" behavior model, and further dividing the shutdown circuit of the behavior model into the first shutdown circuit stage (equivalent to the behavior model having only a controllable current source, at which time the power diode PN junction is still in a forward conduction state) and the second shutdown circuit stage (at this time, the controllable current source is set to zero, which is equivalent to the behavior model having only a large resistor. For the power diode, a higher resistance is formed, which can effectively prevent most of the current from passing through, and the power diode PN junction turns into reverse cutoff to complete the shutdown) to achieve real-time behavior-level modeling of the power diode. Based on the shutdown phase transition of the shutdown circuit of the behavioral model, combined with the reverse characteristics of the power diode, the control of the power diode from conduction to shutdown can be completed in a very short time, with good real-time performance. In addition, when the semiconductor physical parameters are not so comprehensive, the output value of the controllable current source in the first shutdown circuit stage can be calculated. Therefore, in the absence of semiconductor physical parameters, the behavioral modeling and real-time simulation requirements can be met. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0041] Figure 1 A flowchart of the steps of a fast modeling method for a power diode real-time model;

[0042] Figure 2 A schematic diagram of the circuit morphology of a power diode behavior model;

[0043] Figure 3 A schematic diagram of a change process of a diode current corresponding to a first circuit-off stage;

[0044] Figure 4 It is a schematic diagram of the overall process of a fast modeling method for a power diode real-time model;

[0045] Figure 5 The structural block diagram of a fast modeling device for a power diode real-time model. DETAILED DESCRIPTION

[0046] Embodiments of the present invention provide a method for quickly modeling a real-time model of a power diode, a device for quickly modeling a real-time model of a power diode, an electronic device and a storage medium, which are used to solve or partially solve the technical problem in related technologies that behavioral level modeling and real-time simulation requirements cannot be met in the absence of semiconductor physical parameters.

[0047] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0048] As an example, the traditional power diode circuit simulation mainly uses analytical models, behavioral models and numerical models. Among them, the analytical model is based on the physical principles of the device and establishes a model that can accurately describe the steady-state and transient operation of the device. However, this method is computationally intensive and difficult to achieve real-time simulation. The behavioral model provides a good prediction of the device performance, but ignores the detailed physical characteristics. The numerical model can simulate the electrical, thermal and optical characteristics of the device using the finite element method without manufacturing the physical device, but the calculation is very time-consuming.

[0049] The choice of modeling method depends on the accuracy required for simulation, computing resources, convergence properties, validity range, and time consumption of the calculation program. Analytical models and numerical models consume a lot of computing resources and are not suitable for real-time simulation scenarios. Therefore, choosing a behavioral model with the best real-time performance, acceptable accuracy, and low computing resource consumption for fast modeling and real-time simulation of power diodes is currently a feasible and recommended modeling solution. In other words, the behavioral model is the model with the best real-time performance among these models. It also uses the least computing resources. Other models require a lot of resources and execution time.

[0050] However, if the behavioral model is used to model the power diode, due to the neglect of detailed physical characteristics, in the absence of semiconductor physical parameters, there is also a problem that the behavioral modeling and real-time simulation requirements cannot be met. The present invention believes that if users can directly extract the gate turn-on and turn-off characterization parameters from the power diode device data sheet and directly establish behavioral modeling on this basis, it will be able to solve most users' needs for modeling the turn-on and turn-off conditions of switch components. At the same time, accelerating the calculation of such models and embedding them into hardware-in-the-loop scenarios will also greatly improve the versatility and practicality of such models.

[0051] Therefore, one of the core inventive points of the embodiment of the present invention is to propose a rapid modeling method for a real-time model of a power diode with reverse recovery characteristics. A two-node model is used to connect the power diode, which is used as the behavioral model of the power diode and connected to the main circuit of the power system; the circuit form of the behavioral model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage; in the first shutdown circuit stage, the shutdown circuit is controlled to adopt a circuit form of a large resistor in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first shutdown circuit stage is calculated; when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage, the controllable current source is set to zero. Based on the technical solution provided by the present invention, in the absence of semiconductor physical parameters, it can also meet the behavioral modeling and real-time simulation requirements, and realize the hardware-in-the-loop test requirements of normal working on-state and closed-state power consumption requirements, so as to further evaluate the safety and adequacy of the power system and its control system.

[0052] Reference Figure 1 , shows a flowchart of a method for quickly modeling a power diode real-time model provided by an embodiment of the present invention, which may specifically include the following steps:

[0053] Step 101, a two-node model is used to connect a power diode as a behavior model of the power diode, and connected to a main circuit of a power system; the circuit form of the behavior model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage;

[0054] Considering the realization of real-time simulation based on the constructed power diode model, the number of circuit morphology nodes should be as small as possible. In the embodiment of the present invention, a two-node model is used to connect the power diode as the behavior model of the power diode and connected to the main circuit of the power system, thereby greatly reducing the amount of calculation of the main circuit.

[0055] Figure 2 A circuit diagram of a power diode behavior model provided by an embodiment of the present invention is shown.

[0056] Combination Figure 2, the circuit form of the power diode behavior model can be divided into the on-state circuit form and the off-state circuit form. Both circuit forms can adopt the circuit form of a resistor in parallel with a controllable current source. The off-circuit form can be further divided into the off-circuit stage ① and the off-circuit stage ②. For the convenience of distinction, the off-circuit stage ① is defined as the first off-circuit stage, and the off-circuit stage ② is defined as the second off-circuit stage. In the first off-circuit stage, a large resistor in parallel with a controllable current source is adopted, which is equivalent to connecting only a controllable current source to the main circuit. In the second off-circuit stage, the controllable current source is set to zero, which is equivalent to connecting only a large resistor to the main circuit.

[0057] Among them, the specific resistance value of the large resistor can be set according to the actual situation. When the working current in the circuit is small, for example, the working current in the circuit is in milliamperes, a resistor with a resistance of several thousand ohms (kΩ) can be used as the large resistor. When the working voltage or working current in the circuit is large, such as in high voltage applications, for sufficient insulation and safety, a resistor with a higher resistance value can be used as the large resistor. For example, in applications with kilovolt voltages, a resistor of the megaohm (MΩ) level can be used as the large resistor. It is understandable that the present invention is not limited to this.

[0058] Step 102: In the first shutdown circuit stage, the shutdown circuit is controlled to adopt a circuit form of a large resistor in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first shutdown circuit stage is calculated:

[0059] Figure 3 A schematic diagram of a change process of a diode current corresponding to a first circuit shutdown stage provided by an embodiment of the present invention is shown.

[0060] like Figure 3 As shown in the figure, after the power diode is turned off from the normal operating point, the current reversal dynamic change in the first shutdown circuit stage is in the form of a straight line decline. The slope of this stage is directly linearly related to the size of the access resistance. This slope can be found in the device data sheet. After the zero crossing point, the reverse recovery time begins to accumulate until the maximum reverse recovery current and the 25% point of the maximum reverse recovery current are connected to the zero crossing point. Among them, the maximum reverse recovery current and the total reverse recovery charge can be found in the device data sheet. After reaching the maximum reverse recovery current, the diode current begins to show a decay state of first-order current change.

[0061] It can be seen that after the power diode starts to shut down from the normal operating point, the shutdown circuit enters the first shutdown circuit stage. The change process of the diode current corresponding to the first shutdown circuit stage is: the diode current undergoes a dynamic change of current reversal in the form of a straight line decline; when the diode current passes through the zero point, the reverse recovery time begins to accumulate until the straight line connecting the maximum value of the reverse recovery current and the 25% point of the maximum value of the reverse recovery current is extended to the zero point; after reaching the maximum value of the reverse recovery current, the diode current begins to show a decay state of first-order current change.

[0062] In some embodiments, the process of calculating the output value of the controllable current source corresponding to the first circuit-off stage can be implemented by executing the following sub-steps S01 to S04:

[0063] Step S01: obtaining the maximum value of the reverse recovery current of the power diode, the total amount of reverse recovery charge, and the first stage recovery time from the zero crossing point to the maximum value of the reverse recovery current;

[0064] Combined with the previous content, we can know that the maximum reverse recovery current And the total reverse recovery charge These can be found in the device data sheet.

[0065] At the same time, the slope from steady state to the maximum value of reverse recovery current can also be obtained according to the size of the access resistance. Therefore, the curve from steady state to the maximum value of reverse recovery current can also be determined. Then the first stage recovery time from the zero crossing point to the maximum value of reverse recovery current can be obtained. .

[0066] Step S02: Calculating the reverse recovery time according to the maximum value of the reverse recovery current and the total amount of reverse recovery charge;

[0067] During the reverse recovery time When is an unknown quantity, it can be estimated using the following formula:

[0068]

[0069] Step S03: Based on the reverse recovery time and the first stage recovery time, the second stage recovery time is inferred;

[0070] According to the reverse recovery time And the first stage recovery time , the second stage recovery time can be inferred by the following formula :

[0071]

[0072] The second stage recovery time The maximum reverse recovery current of the power diode At the maximum reverse recovery current The time it takes for the straight line connecting the 25% points to extend to the zero point.

[0073] Step S04: According to the second stage recovery time, combined with the reverse first-order process analysis, the controllable current source output value corresponding to the first circuit shutoff stage is calculated.

[0074] The reverse recovery time is calculated above. It is assumed according to the triangle area formula. The actual change curve is roughly a first-order process. Among them, from 100% to the 25% observation value point according to the first-order attenuation curve, it can be considered A first-order process. Calculate After the value is obtained, the output value of the controllable current source can be calculated by the first-order formula.

[0075] In the specific implementation, according to the second stage recovery time , combined with the reverse first-order process analysis, the controllable current source output value corresponding to the first shutdown circuit stage is calculated as follows: First, according to the second stage recovery time Based on the first-order characteristics of reverse recovery, the first-order time constant corresponding to the first turn-off circuit stage is reversely derived ; Then according to the first-order time constant , combined with the preset controllable current source expected value , calculate the output value of the controllable current source corresponding to the first shutdown circuit stage .

[0076] Among them, the output value of the controllable current source can be calculated by the following formula:

[0077]

[0078] In the formula, Represents the output value of the controllable current source; represents a preset expected value of a controllable current source; represents the first-order time constant; Represents a bilinear transformation ; Indicates the sampling period; Represents the z-transform.

[0079] It is understandable that the expected value of the controllable current source can be preset in advance. For example, when controlling the shutdown device, it can be predicted in advance that the control current is zero.

[0080] is the first-order time constant in the circuit. (ie resistance * capacitance), (i.e. inductance / resistance). More specifically, it can be understood as In a first-order circuit change, the time from when the circuit starts to change to when the circuit response reaches 63.2% of its value. Assuming that the state starts to rise from 0, if the maximum value of the reverse recovery current is obtained according to the embodiment of the present invention, Starts to decay, after a After that, it will decay to 36.8% of its original value. It is an important parameter for the response of the reaction circuit. When it is shorter, it means the circuit responds faster. When it is longer, it means that the circuit response speed is slower. In the embodiment of the present invention, setting The reason is that The full value decays to 25.01% Time, take its approximate value .

[0081] Through the relevant calculation methods listed in this step, the amount of calculation for calculating the reverse recovery current of the power diode can be greatly reduced. And it can be highly matched with the actual equipment data sheet, thus achieving the simplification of conditions for physical interpretability.

[0082] Step 103: When the shutdown phase of the shutdown circuit changes from the first shutdown circuit phase to the second shutdown circuit phase, control the controllable current source to zero.

[0083] Combination Figure 3 When the reverse recovery current of the power diode decays to near zero, the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage, that is, the high impedance state. At this time, the control sets the controllable current source to zero, which is equivalent to connecting only a large resistor to the main circuit.

[0084] In an embodiment of the present invention, a fast modeling method for a real-time model of a power diode with reverse recovery characteristics is proposed. Based on the technical solution provided by the present invention, in the absence of semiconductor physical parameters, the behavioral modeling and real-time simulation requirements can be met, and the hardware-in-the-loop test requirements for normal working on-state and off-state power consumption requirements can be achieved, so as to further evaluate the safety and adequacy of the power system and its control system.

[0085] For better explanation, refer to Figure 4 , showing a schematic diagram of the overall process of a method for rapid modeling of a power diode real-time model provided by an embodiment of the present invention. It should be pointed out that this embodiment only briefly describes the general process of rapid modeling of a power diode real-time model, and the specific implementation process of each step can be understood by referring to the relevant content in the aforementioned embodiment, which will not be described here. It can be understood that the present invention does not limit this.

[0086] Step 401: A two-node model is used to connect a power diode as a behavior model of the power diode, and connected to a main circuit of a power system; wherein the circuit form of the behavior model includes an on-state circuit and an off-state circuit, and the off-state stage of the off-state circuit includes a first off-state circuit stage and a second off-state circuit stage;

[0087] Step 402: When the circuit form of the behavior model is an on-state circuit, control adopts a circuit form of a resistor in parallel with a controllable current source;

[0088] Step 4031: when the circuit form of the behavior model is a shutdown circuit, in the first shutdown circuit stage of the shutdown circuit, the shutdown circuit is controlled to adopt a circuit form of a large resistor in parallel with a controllable current source;

[0089] Step 4032: Obtain the maximum value of the reverse recovery current, the total amount of reverse recovery charge, and the first stage recovery time from the zero-crossing point to the maximum value of the reverse recovery current of the power diode;

[0090] Step 4033: Calculate the reverse recovery time according to the maximum reverse recovery current and the total reverse recovery charge;

[0091] Step 4034: Based on the reverse recovery time and the first stage recovery time, the second stage recovery time is inferred.

[0092] Step 4035: Calculate the controllable current source output value corresponding to the first circuit-off stage according to the second stage recovery time and in combination with the reverse first-order process analysis;

[0093] Step 4036: When the shutdown phase of the shutdown circuit changes from the first shutdown circuit phase to the second shutdown circuit phase, the control sets the controllable current source to zero.

[0094] Reference Figure 5 , shows a structural block diagram of a fast modeling device for a power diode real-time model provided by an embodiment of the present invention, which may specifically include:

[0095] The behavior model building unit 501 is used to connect a power diode using a two-node model as a behavior model of the power diode, and connect to the main circuit of the power system; the circuit form of the behavior model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage;

[0096] The first shutdown circuit stage control unit 502 is used to control the shutdown circuit to adopt a circuit form of a large resistor in parallel with a controllable current source in the first shutdown circuit stage, and calculate the output value of the controllable current source corresponding to the first shutdown circuit stage:

[0097] The second shutdown circuit stage control unit 503 is used to control the controllable current source to be set to zero when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage.

[0098] In an optional embodiment, the first circuit-off stage control unit 502 includes:

[0099] A data acquisition unit, used to acquire the maximum value of the reverse recovery current of the power diode, the total amount of reverse recovery charge, and the first stage recovery time from the zero-crossing point to the maximum value of the reverse recovery current;

[0100] A reverse recovery time calculation unit, used to calculate the reverse recovery time according to the maximum reverse recovery current and the total reverse recovery charge;

[0101] A second-stage recovery time calculation unit, for inferring the second-stage recovery time based on the reverse recovery time and in combination with the first-stage recovery time; the second-stage recovery time is the time taken by the power diode to extend from the maximum value of the reverse recovery current to the straight line connected with the 25% point of the maximum value of the reverse recovery current to the zero-crossing point;

[0102] The controllable current source output value calculation unit is used to calculate the controllable current source output value corresponding to the first circuit shutoff stage according to the second stage recovery time combined with the reverse first-order process analysis.

[0103] In an optional embodiment, the controllable current source output value calculation unit includes:

[0104] A first-order time constant reverse derivation unit, configured to reversely derive a first-order time constant corresponding to the first circuit-off stage according to the second-stage recovery time and based on the first-order characteristics of reverse recovery;

[0105] The controllable current source output value calculation subunit is used to calculate the controllable current source output value corresponding to the first circuit-off stage according to the first-order time constant and a preset controllable current source expected value.

[0106] In an optional embodiment, the output value of the controllable current source is calculated by the following formula:

[0107]

[0108] in, Represents the output value of the controllable current source; represents a preset expected value of a controllable current source; represents the first-order time constant; Represents a bilinear transformation ; Indicates the sampling period; Represents the z-transform.

[0109] In an optional embodiment, after the power diode starts to shut down from the normal operating point, the shutdown circuit enters the first shutdown circuit stage; the rapid modeling device of the power diode real-time model also includes a diode current changing unit, and the diode current changing unit is specifically used to:

[0110] The diode current undergoes a current reversal dynamic change in a straight line downward form;

[0111] When the diode current passes through the zero point, the reverse recovery time starts to be accumulated until the straight line connecting the maximum value of the reverse recovery current and the point of 25% of the maximum value of the reverse recovery current is extended to the zero point;

[0112] After reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decay state of first-order current change.

[0113] In an optional embodiment, the fast modeling device of the power diode real-time model further includes:

[0114] The second shutdown circuit phase transition unit is configured to transition the shutdown phase of the shutdown circuit from the first shutdown circuit phase to the second shutdown circuit phase when the reverse recovery current of the power diode decays to a point close to zero.

[0115] In an optional embodiment, the circuit form of the behavioral model further includes an on-state circuit, and the on-state circuit is in the form of a resistor in parallel with a controllable current source.

[0116] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the aforementioned method embodiment.

[0117] It should be noted that, in order to enable those skilled in the art to better distinguish data of the same type but with different actual meanings, some technical features are distinguished by the first and the second in the embodiments of the present invention. The first and the second are only used for data distinction and have no other special meanings. It can be understood that the present invention is not limited to this.

[0118] An embodiment of the present invention further provides an electronic device, the device comprising a processor and a memory:

[0119] The memory is used to store the program code and transmit the program code to the processor;

[0120] The processor is used to execute the fast modeling method of the power diode real-time model according to any embodiment of the present invention according to the instructions in the program code.

[0121] An embodiment of the present invention further provides a computer-readable storage medium, which is used to store program codes, and the program codes are used to execute the method for fast modeling of a power diode real-time model according to any embodiment of the present invention.

[0122] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0123] In the several embodiments provided by the present invention, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0124] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0125] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0126] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM), random access memory (RAM), disk or optical disk, etc., various media that can store program codes.

[0127] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A rapid modeling method for a power diode real-time model, characterized in that: include: A two-node model is used to connect a power diode, which is used as a behavior model of the power diode and connected to a main circuit of a power system; The circuit form of the behavior model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage; In the first shutdown circuit stage, the shutdown circuit is controlled to adopt a circuit form of a large resistor in parallel with a controllable current source, and the output value of the controllable current source corresponding to the first shutdown circuit stage is calculated: When the shutdown phase of the shutdown circuit changes from the first shutdown circuit phase to the second shutdown circuit phase, the control sets the controllable current source to zero.

2. The rapid modeling method of the power diode real-time model according to claim 1 is characterized in that: The calculating the output value of the controllable current source corresponding to the first circuit-off stage includes: Obtaining the maximum value of the reverse recovery current, the total amount of reverse recovery charge, and the first stage recovery time from the zero-crossing point to the maximum value of the reverse recovery current of the power diode; Calculating a reverse recovery time according to the maximum reverse recovery current and the total reverse recovery charge; Based on the reverse recovery time, combined with the first stage recovery time, the second stage recovery time is inferred; the second stage recovery time is the time for the power diode to extend from the maximum value of the reverse recovery current to the straight line connected with the 25% point of the maximum value of the reverse recovery current to the zero crossing point; According to the second stage recovery time, combined with the reverse first-order process analysis, the controllable current source output value corresponding to the first circuit shutdown stage is calculated.

3. The rapid modeling method of the power diode real-time model according to claim 2 is characterized in that: The calculating, according to the second stage recovery time and in combination with the reverse first-order process analysis, the output value of the controllable current source corresponding to the first circuit shut-off stage comprises: According to the second stage recovery time, based on the first-order characteristics of reverse recovery, reversely derive the first-order time constant corresponding to the first circuit-off stage; According to the first-order time constant and in combination with a preset expected value of the controllable current source, an output value of the controllable current source corresponding to the first circuit-off stage is calculated.

4. The rapid modeling method of the power diode real-time model according to claim 3 is characterized in that: The output value of the controllable current source is calculated by the following formula: in, Represents the output value of the controllable current source; represents a preset expected value of a controllable current source; represents the first-order time constant; Represents a bilinear transformation ; Indicates the sampling period; Represents the z-transform.

5. The rapid modeling method of the power diode real-time model according to claim 2 is characterized in that: After the power diode starts to shut down from the normal operating point, the shutdown circuit enters the first shutdown circuit stage; The change process of the diode current corresponding to the first circuit-off stage is: The diode current undergoes a current reversal dynamic change in a straight line downward form; When the diode current passes through the zero point, the reverse recovery time starts to be accumulated until the straight line connecting the maximum value of the reverse recovery current and the point of 25% of the maximum value of the reverse recovery current is extended to the zero point; After reaching the maximum value of the reverse recovery current, the diode current begins to exhibit a decay state of first-order current change.

6. The rapid modeling method of a power diode real-time model according to claim 5, characterized in that: Also includes: When the reverse recovery current of the power diode decays to a point close to zero, the shutdown phase of the shutdown circuit changes from the first shutdown circuit phase to the second shutdown circuit phase.

7. The rapid modeling method of a power diode real-time model according to any one of claims 1 to 6, characterized in that: The circuit form of the behavior model also includes an on-state circuit, and the on-state circuit adopts a circuit form of a resistor in parallel with a controllable current source.

8. A rapid modeling device for a real-time model of a power diode, characterized in that: include: A behavior model building unit is used to connect a power diode using a two-node model as a behavior model of the power diode, and connect to a main circuit of a power system; the circuit form of the behavior model includes a shutdown circuit, and the shutdown stage of the shutdown circuit includes a first shutdown circuit stage and a second shutdown circuit stage; The first shutdown circuit stage control unit is used to control the shutdown circuit to adopt a circuit form of a large resistor in parallel with a controllable current source in the first shutdown circuit stage, and calculate the output value of the controllable current source corresponding to the first shutdown circuit stage: The second shutdown circuit stage control unit is used to control the controllable current source to be set to zero when the shutdown stage of the shutdown circuit changes from the first shutdown circuit stage to the second shutdown circuit stage.

9. An electronic device, characterized in that: The device comprises a processor and a memory: The memory is used to store program code and transmit the program code to the processor; The processor is used to execute the fast modeling method of the power diode real-time model according to any one of claims 1 to 7 according to the instructions in the program code.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium is used to store program codes, and the program codes are used to execute the method for rapid modeling of a power diode real-time model according to any one of claims 1 to 7.

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