Ion implanter device based on radio frequency ion source

Abstract

The invention relates to an ion implanter device based on a radio frequency ion source, and belongs to the technical field of ion implantation. The device is composed of an ion source part, a vacuum chamber part and a target chamber part. The radio frequency ion source is simple and compact in structure, the grid electrode is fed into the target chamber, the beam size can be monitored online in real time, the concentration of injected ions is accurate and controllable, on the other hand, the gate valve is used for isolating the vacuum chamber from the target chamber, the air exhaust time after sample replacement is shortened, rapid starting can be achieved, and the detection efficiency is improved. And a good technical basis is provided for the field of ion implantation.

Description

Technical Field

[0001] The invention relates to the technical field of ion implantation, and in particular to an ion implantation device based on a radio frequency ion source. Background Art

[0002] Ion implantation machine is a kind of high-voltage small accelerator, which accelerates the required ion beam and injects it into the surface of the material. Ion implantation machine is commonly used in research fields such as semiconductor materials, large-scale integrated circuits, and material modification. Therefore, the research and development of ion implantation machine is of great significance to promote the progress of semiconductor technology and material research. At present, the existing ion implantation machine has problems such as complex structure, high manufacturing cost, difficult maintenance and complex operation. Therefore, it is imperative to design an ion implantation machine with simple and compact structure, low manufacturing cost and easy operation, so as to provide a good technical foundation for the field of ion implantation. Summary of the invention

[0003] The purpose of the present invention is to provide an ion implanter device based on a radio frequency ion source, and to provide an ion implanter device with a simple and compact structure and easy operation for the ion implantation field.

[0004] The specific technical scheme of the present invention is:

[0005] An ion implanter device based on a radio frequency ion source, the ion implanter device comprising an ion source part, a vacuum chamber part and a target chamber part;

[0006] The ion source part is connected to the matcher of the radio frequency system based on the coil, and ionizes the fed gas to generate an ion beam by controlling the radio frequency power;

[0007] The vacuum chamber part is used to create a vacuum environment for the ion beam in combination with a matching vacuum pumping system;

[0008] The target chamber is used to place the target material to be implanted.

[0009] The beneficial effects of the present invention are:

[0010] 1. The device uses a radio frequency ion source with a simple and compact structure. The grid fed into the target chamber can monitor the beam size online in real time, making the concentration of injected ions precisely controllable.

[0011] 2. This device uses a plug valve to isolate the vacuum chamber and the target chamber, shortening the pumping time after changing the sample and allowing rapid start-up. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic structural diagram of an ion implanter device based on a radio frequency ion source of the present invention;

[0013] In the figure: 1-ion source upper cover plate; 2-first support column; 3-coil; 4-ion source chamber; 5-chamber upper cover plate; 6-extraction electrode; 7-second support column; 8-ceramic chamber; 9-through hole flange; 10-transition flange; 11-vacuum chamber; 12-molecular pump; 13-gate valve; 14-target chamber; 141-quick opening observation window interface; 142-KF exhaust interface; 143-grid interface; 15-grid; 16-stage; 17-blind flange; 171-vacuum motor interface; 18-quick opening observation window; 19-vacuum motor. DETAILED DESCRIPTION

[0014] The following is a detailed description of an embodiment of the present invention. This embodiment is implemented on the premise of the technical solution of the present invention, and a detailed implementation method and a specific operation process are given, but the protection scope of the present invention is not limited to the following implementation.

[0015] like Figure 1 As shown, the present invention provides an ion implanter device based on a radio frequency ion source, which is divided into an ion source part, a vacuum chamber part and a target chamber part from top to bottom; its working method is: a reaction gas is introduced into the ion source, and then the ion source ionizes the gas through a radio frequency system to generate plasma, and an ion beam is extracted with the help of an extraction electrode to inject ions into the target material on the stage.

[0016] The ion source part comprises an ion source upper cover plate 1, a first support column 2, a coil 3, an ion source chamber 4, a chamber upper cover plate 5, an extraction electrode 6, a second support column 7, a ceramic chamber 8, a through-hole flange 9, and a transition flange 10. A sealing groove is formed on the upper end face of the chamber upper cover plate 5, and the sealing groove on the upper end face is concentrically matched with the ion source chamber 4. The ion source chamber 4 is a cylinder with openings at both ends, and a multi-turn coil 3 is wound around the outside of the ion source chamber 4. After the coil 3 is connected to the radio frequency system, the gas inside the ion source chamber 4 is excited to generate plasma. The gas inside the ion source chamber 4 is fed in by the KF interface of the ion source upper cover plate 1 through the gas supply system. A sealing groove is also formed on the side of the ion source upper cover plate 1 contacting the ion source chamber 4, which is concentrically matched with the ion source chamber 4. At the same time, a threaded through hole with a circumferential distribution is drilled on the ion source upper cover plate 1, which is convenient for the first support column 2 to pass through, and the other end of the first support column 2 is threadedly fixed on the chamber upper cover plate 5. The pressure provided by the threaded cooperation of the ion source upper cover plate 1 and the first support column 2 fixes the ion source chamber 4, and the sealing ring between the ion source upper cover plate 1, the chamber upper cover plate 5 and the ion source chamber 4 is deformed after being compressed to form a vacuum seal. A sealing groove is machined on the lower end face of the chamber upper cover plate 5, and the lower end face sealing groove is concentrically matched with the ceramic chamber 8. The ceramic chamber 8 is a cylinder with upper and lower ends through openings, and a sealing groove is also machined on one side of the through hole flange 9 contacting the ceramic chamber 8, which is concentrically matched with the ceramic chamber 8. At the same time, the chamber upper cover plate 5 and the through hole flange 9 are provided with circumferentially distributed threaded through holes, which are convenient for the second support column 7 to pass through, and the thread of one end of the second support column 7 is fixed in the threaded through hole of the chamber upper cover plate 5, and the other end of the second support column 7 is threadedly fixed in the threaded through hole of the transition flange 10. The ceramic chamber 8 is fixed by the pressure provided by the threaded cooperation of the chamber upper cover plate 5 and the second support column 7, and the sealing rings between the chamber upper cover plate 5, the through-hole flange 9, the transition flange 10 and the ceramic chamber 8 are deformed under pressure to form a vacuum seal. At the same time, the lead-out electrode 6 is coaxially installed in the ceramic chamber 8 and fixed to the through-hole flange 9 by bolts.

[0017] The vacuum chamber part includes a vacuum chamber 11, a molecular pump 12, and a gate valve 13. The main body of the vacuum chamber 11 is cylindrical, and vacuum flanges are welded at the upper and lower ends, and the transition flange 10 and the gate valve 13 are connected by bolts. A sealing ring is used to vacuum seal the transition flange 10, the gate valve 13 and the vacuum chamber 11. An air pump is provided around the chamber, and a molecular pump 12 is installed at the air pump to provide a vacuum environment inside the vacuum chamber 11.

[0018] The target chamber part includes a target chamber 14, a grid 15, a stage 16, a blind flange 17, a quick-opening observation window 18, a vacuum motor 19, a quick-opening observation window interface 141, a KF exhaust port 142, and a grid interface 143. The main body of the target chamber 14 is in the shape of a cylinder, and the upper and lower ends are respectively welded with vacuum flanges and bolted to connect the gate valve 13 and the blind flange 17. The gate valve 13, the blind flange 17 and the target chamber 14 are vacuum-sealed with a sealing ring. KF exhaust ports 142, quick-opening observation window interfaces 141 and grid interfaces 143 are arranged around the target chamber 14. The stage 16 is located in the target chamber 14, and the grid 15 is located in the grid interface 143. The internal situation of the target chamber 14 is observed through the quick observation window 18 and the quick-opening observation window interface 141.

[0019] Preferably, the ion source upper cover plate 1 is made of stainless steel and has a flange shape. One side is in contact with the nut of the first support column 2, and the other side is provided with a sealing groove, which is concentrically matched with the ion source chamber 4. The ion source chamber 4 is fixed by the extrusion of the nut on the first support column 2 and the ion source upper cover plate 1, and the ion source vacuum seal is formed due to the extrusion deformation of the sealing ring. In addition, a KF40 interface is welded at the center of the ion source upper cover plate 1 to facilitate air intake.

[0020] Preferably, the ion source chamber 4 is made of quartz material. The whole is a cylindrical tube with two ends open, and the shape of the end surface is changed according to the sealing method. The two ends are respectively in contact with the chamber upper cover plate 5 and the ion source upper cover plate 1.

[0021] Preferably, the coil 3 is formed by winding multiple turns around the outer diameter of the ion source chamber 4, and the whole is in a spiral shape. The coil diameter, number of turns and turn spacing can affect the electron density of the excited plasma and need to be adjusted according to the required ion beam performance and chamber diameter. Preferably, the coil should be made of a material with excellent thermal conductivity and high electrical conductivity, such as copper.

[0022] Preferably, the chamber upper cover plate 5 is made of a metal material with good thermal conductivity, and has a flange shape. An ion beam extraction hole is drilled in the middle of the upper cover plate, and the hole diameter should be smaller than the extraction hole on the extraction electrode. A sealing groove is formed around the ion beam extraction hole for placing a sealing ring, which forms a vacuum seal with the ion source chamber after being pressurized.

[0023] Preferably, the ceramic cavity 8 is a cylindrical tube with two ends opened, and the two ends are respectively in contact with the cavity upper cover plate 5 and the through-hole flange 9.

[0024] Preferably, the extraction electrode 6 is made of oxygen-free copper and is conical in shape. An extraction hole with a diameter larger than the ion beam extraction hole is provided at the top of the extraction electrode 6, and a plurality of circular through holes are provided on the side for easy air extraction. The bottom ring is provided with threaded through holes distributed in a circumference to fix the extraction electrode 6 on the through hole flange 9.

[0025] Preferably, the through-hole flange 9 is made of stainless steel, has a circular through-hole at the center, and has a sealing groove around the circular through-hole 9 .

[0026] Preferably, the transition flange 10 is made of stainless steel, has a circular through hole at the center, a sealing groove on the circumferential side of the circular through hole, and is drilled with threaded holes distributed circumferentially.

[0027] Preferably, the vacuum chamber 11 is made of metal with certain strength and good processing performance to ensure that the vacuum chamber 11 can meet the conditions of ultra-high vacuum. The shape and size of the vacuum chamber 11 are determined according to the requirements and the installation environment. The vacuum chamber 11 is provided with functional ports such as an exhaust port, an observation port, and a measurement port as required, and flanges are welded at both ends of the chamber. Preferably, the specifications of the functional ports and the flanges at both ends can refer to GB / T 6070-2007 and GB / T 6071-2003. Preferably, the weld gas leakage rate inside the vacuum chamber 11 is less than.

[0028] Preferably, the target chamber 14 is made of metal with certain strength and good processing performance to ensure that the chamber 14 can meet the ultra-high vacuum conditions. Flanges are welded at the upper and lower ends, and the two ends are respectively connected to the gate valve 13 and the blind flange 17. KF exhaust ports 142, quick-open observation window interfaces 141 and gate interfaces 143 are provided around the target chamber 14.

[0029] Preferably, the stage 16 is in a pancake shape, and six circumferentially distributed platforms are provided on the upper end surface of the stage 16 for placing the workpiece. A transmission shaft is provided at the center of the lower end surface of the stage 16, which is connected to the vacuum motor 19 and is used to drive the stage 16 to rotate.

[0030] Preferably, the blind flange 17 is made of stainless steel, and a vacuum motor interface 171 is provided at an eccentric position of the blind flange 17 for feeding the vacuum motor 19 .

[0031] Preferably, the grid 15 has a light transmittance of 95%, and is fed into the target chamber through the grid interface 143 on the target chamber periphery for measuring the ion beam current. The measured current divided by 5% and then multiplied by 95% is the real current of the ion beam.

[0032] Preferably, the sealing ring is made of fluororubber, is placed in the sealing groove, and is squeezed under pressure to fill the sealing groove and form a vacuum seal.

[0033] Preferably, the first support column 2 and the second support column 7 are cylindrical bodies made of PEEK material, and threads are formed at the upper and lower ends for fixing the ion source chamber 4 and the ceramic chamber 8 .

Claims

1. An ion implanter device based on a radio frequency ion source, characterized in that: The ion implanter device comprises an ion source part, a vacuum chamber part and a target chamber part; The ion source part is connected to the matcher of the radio frequency system based on the coil, and ionizes the fed gas to generate an ion beam by controlling the radio frequency power; The vacuum chamber part is used to create a vacuum environment for the ion beam in combination with a matching vacuum pumping system; The target chamber is used to place the target material to be implanted.

2. The ion implanter device based on a radio frequency ion source according to claim 1, characterized in that: The ion source part comprises an ion source upper cover plate, a first support column, a coil, an ion source chamber, a chamber upper cover plate, an extraction electrode, a second support column, a ceramic chamber, a through-hole flange, and a transition flange. A sealing groove is formed on the upper end surface of the chamber upper cover plate, and the sealing groove on the upper end surface is concentrically matched with the ion source chamber; the ion source chamber is a cylinder with openings at both ends, and a multi-turn coil is wound around the outside of the ion source chamber. After the coil is connected to a radio frequency system, the gas inside the ion source chamber is excited to generate plasma; the gas inside the ion source chamber is fed into the ion source chamber through the gas supply system with the help of the KF interface of the ion source upper cover plate, and a sealing groove is also formed on one side of the ion source upper cover plate that contacts the ion source chamber, and is concentrically matched with the ion source chamber, and at the same time, threaded through holes distributed circumferentially are arranged on the ion source upper cover plate to facilitate the first support column to pass through, and the thread at one end of the second support column is fixed in the threaded through hole of the chamber upper cover plate, and the thread at the other end of the second support column The invention is fixed in the threaded through hole of the transition flange; the ion source chamber is fixed by the pressure provided by the threaded cooperation of the ion source upper cover plate and the first support column, and the sealing ring between the ion source upper cover plate, the chamber upper cover plate and the ion source chamber is deformed to form a vacuum seal after being compressed, a sealing groove is machined on the lower end face of the chamber upper cover plate, and the lower end face sealing groove is concentrically matched with the ceramic chamber. The ceramic chamber is a cylinder with openings at both ends, and a sealing groove is also machined on the side of the through-hole flange contacting the ceramic chamber, which is concentrically matched with the ceramic chamber. At the same time, the chamber upper cover plate and the through-hole flange are drilled with circumferentially distributed threaded through holes for the second support column to pass through, and the other end of the second support column is threadedly fixed on the transition flange, and the ceramic chamber is fixed by the pressure provided by the threaded cooperation of the chamber upper cover plate and the second support column, and the sealing ring between the chamber upper cover plate, the through-hole flange, the transition flange and the ceramic chamber is deformed to form a vacuum seal after being compressed. At the same time, the extraction electrode is installed concentrically in the ceramic chamber, and the extraction electrode is fixed on the through-hole flange by bolts.

3. The ion implanter device based on a radio frequency ion source according to claim 1, characterized in that: The vacuum chamber part includes a vacuum chamber, a molecular pump, and a gate valve. The vacuum chamber body is cylindrical in shape, and vacuum flanges are welded at the upper and lower ends respectively, and the transition flange and the gate valve are connected by bolts. A sealing ring is used to vacuum seal the transition flange, the gate valve and the chamber. An exhaust port is provided around the chamber, and a molecular pump is installed at the exhaust port to provide a vacuum environment inside the vacuum chamber.

4. The ion implanter device based on a radio frequency ion source according to claim 1, characterized in that: The target chamber part comprises a target chamber, a grid, a stage, a blind flange, a quick-opening observation window, a vacuum motor, a KF exhaust port, a quick-opening observation window interface and a grid interface. The main body of the target chamber part is in the shape of a cylinder, and vacuum flanges are respectively welded at the upper and lower ends, and the plug valve and the blind flange are connected by bolts. A sealing ring is used to perform vacuum sealing between the plug valve, the blind flange and the target chamber. KF exhaust ports, a quick-opening observation window interface and a grid interface are arranged around the target chamber. The stage is located in the target chamber, and the grid is located in the grid interface. The internal situation of the target chamber is observed through the quick observation window and the quick-opening observation window interface.

5. The ion implanter device based on a radio frequency ion source according to claim 2, characterized in that: The ion source upper cover plate is made of stainless steel, and the ion source chamber is made of quartz material.

6. The ion implanter device based on a radio frequency ion source according to claim 2, characterized in that: The extraction electrode is made of oxygen-free copper and is generally conical in shape. An extraction hole with a diameter larger than the ion beam extraction hole is provided at the top of the extraction electrode, and multiple circular through holes are provided on the side to facilitate air extraction. Circumferentially distributed threaded through holes are provided on the bottom ring to fix the extraction electrode on the through hole flange.

7. The ion implanter device based on a radio frequency ion source according to claim 2, characterized in that: The through-hole flange is made of stainless steel, with a circular through-hole at the center and a sealing groove around the circular through-hole; the transition flange is made of stainless steel, with a circular through-hole at the center and a sealing groove on the circumferential side of the circular through-hole, and threaded holes distributed circumferentially are drilled.

8. The ion implanter device based on a radio frequency ion source according to claim 3, characterized in that: The vacuum chamber is made of metal and meets the ultra-high vacuum conditions. A vacuum port, an observation port, and a measuring port are arranged around the vacuum chamber, and flanges are welded at both ends of the chamber.

9. The ion implanter device based on a radio frequency ion source according to claim 4, characterized in that: The target chamber is made of metal and meets the ultra-high vacuum condition.

10. The ion implanter device based on a radio frequency ion source according to claim 4, characterized in that: The main body of the stage is in the shape of a pancake, and six circumferentially distributed platforms are respectively provided on the upper end surface of the stage for placing the workpieces. A transmission shaft is provided at the center position of the lower end surface of the stage, which is connected to the vacuum motor and is used to drive the rotation of the stage. The blind plate flange is made of stainless steel, and a vacuum motor interface is provided at an eccentric position of the blind plate flange for feeding the vacuum motor.

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