Skyrmion memory array based on continuous artificial antiferromagnetic material

Abstract

The invention discloses a Skyrmion memory array based on a continuous artificial antiferromagnetic material, and relates to the technical field of random access memories. The Skyrmion memory array based on the continuous artificial antiferromagnetic material comprises an array free layer, a top tunneling layer, a lower pressure bearing layer and a plurality of device electrode groups, and each device electrode group comprises a top device electrode assembly and a bottom device electrode; the array free layer is arranged between the top tunneling layer and the lower pressure bearing layer to form an information storage layer; a top device electrode assembly and a bottom device electrode in the device electrode assembly are arranged on the top face and the bottom face of the information storage layer respectively, and the projection of the top device electrode assembly in the direction perpendicular to the array free layer coincides with the bottom device electrode. A magnetic tunnel junction capable of binary storage is formed by a tunnel junction reference layer in the top device electrode assembly, an array free layer in a projection coverage range of the top device electrode assembly and a top tunneling layer. According to the scheme, the device integration density of the magnetic random access memory can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of random access memory, and in particular to a skyrmion memory array based on continuous artificial antiferromagnetic material. Background Art

[0002] In recent years, voltage-controlled magnetic anisotropy magnetic random access memory (VCMA-MRAM) has been widely used. SAF Skyrmion VCMA-MRAM memory devices that use skyrmions as information carriers in synthetic antiferromagnetic materials (SAF) have received increasing attention. Among them, SAF Skyrmion VCMA-MRAM memory devices are magnetic random access memory (MRAM) that uses skyrmions in synthetic antiferromagnetic materials to store and process information. Here, skyrmions are magnetic structures with non-trivial topological properties, which can form stable vortex magnetization patterns in magnetic materials. Furthermore, compared with traditional single-domain free layer VCMA-MRAM memory devices, SAF Skyrmion VCMA-MRAM memory devices do not require external magnetic field assistance when in use, have zero write error rate in theory, low skyrmion write power and high storage stability.

[0003] At present, each SAFSkyrmion VCMA-MRAM memory device in a magnetic random access memory composed of SAF Skyrmion VCMA-MRAM memory devices is independent of each other. Specifically, each SAF Skyrmion VCMA-MRAM memory device is composed of a top electrode, a bottom electrode, a reference layer, a tunneling layer, a free layer, and a bottom pressure-bearing layer, wherein the reference layer, the tunneling layer, and the free layer constitute a magnetic tunnel junction that can realize binary storage based on the generation or annihilation of skyrmions as the core of the SAFSkyrmion VCMA-MRAM memory device. When a reverse voltage pulse is applied to the two electrodes, skyrmions are generated in the free layer between the two electrodes. When a forward voltage pulse is applied to the two electrodes, skyrmions in the free layer between the two electrodes are annihilated. Furthermore, a computer device can realize the storage of binary data by connecting to two electrodes in a SAF Skyrmion VCMA-MRAM memory device and identifying the resistance difference of the magnetic tunnel junction in different SAF free layer states.

[0004] However, the edge pinning of the free layer based on SAF materials will hinder the nucleation and annihilation of skyrmions, resulting in the need to reserve sufficient buffer area between the nucleation center and the edge of the SAF material in the SAFSkyrmion VCMA-MRAM memory device, which in turn seriously restricts the integration and size reduction of the SAFSkyrmion VCMA-MRAM memory device, resulting in a low device integration density of magnetic random access memory based on SAFSkyrmion VCMA-MRAM memory devices. At the same time, the discrete device structure also limits the advantage of skyrmions being electrically transportable. Summary of the invention

[0005] In view of this, the present application provides a skyrmion memory array based on continuous artificial antiferromagnetic material, the main purpose of which is to solve the technical problem of low device integration density of magnetic random access memory based on SAF Skyrmion VCMA-MRAM memory device.

[0006] According to a first aspect of the present invention, there is provided a skyrmion memory array based on a continuous artificial antiferromagnetic material, the skyrmion memory array based on a continuous artificial antiferromagnetic material comprising an array free layer, a top tunneling layer, a lower pressure bearing layer and a plurality of device electrode groups, wherein each of the device electrode groups comprises a top device electrode assembly and a bottom device electrode, and the top device electrode assembly comprises a top device electrode and a tunnel junction reference layer;

[0007] The array free layer is disposed between the top tunneling layer and the lower pressure-bearing layer to form an information storage layer;

[0008] The top device electrode assembly and the bottom device electrode in the device electrode group are respectively arranged on the top surface and the bottom surface of the information storage layer, and the projection of the top device electrode assembly along the direction perpendicular to the array free layer coincides with the bottom device electrode, wherein the bottom surface of the top device electrode contacts the top surface of the tunnel junction reference layer, the bottom surface of the tunnel junction reference layer contacts the top surface of the top tunneling layer, and the top surface of the bottom device electrode contacts the bottom surface of the lower pressure-bearing layer;

[0009] The tunnel junction reference layer in the device electrode group, the array free layer within the projection coverage of the top device electrode assembly in the device electrode group in a direction perpendicular to the array free layer, and the top tunneling layer constitute a magnetic tunnel junction capable of binary storage.

[0010] Optionally, the top tunneling layer and the lower pressure-bearing layer are made of magnesium oxide or aluminum oxide.

[0011] Optionally, the array free layer includes an intermediate layer, a first magnetic layer and a second magnetic layer; the intermediate layer is arranged between the first magnetic layer and the second magnetic layer, the first magnetic layer is in contact with the top tunneling layer, and the second magnetic layer is in contact with the lower pressure layer.

[0012] Optionally, the middle layer is grounded

[0013] Optionally, the first magnetic layer and the second magnetic layer are made of cobalt iron boron.

[0014] Optionally, the first magnetic layer and the second magnetic layer are made of cobalt.

[0015] Optionally, the intermediate layer is made of one of tungsten, ruthenium, platinum or tantalum.

[0016] Optionally, the side surface of the array free layer has a plurality of electrode access ports, each of the electrode access ports being located at a different position of the side surface, so that when voltages of different voltage levels are applied to any two electrode access ports respectively, a transport current for directional electrical transport of skyrmions is generated in the array free layer; wherein the current direction of the transport current is from the electrode access port connected to a voltage of a high voltage level to the electrode access port connected to a voltage of a low voltage level.

[0017] Optionally, a distance between electrode centers of any two of the top device electrodes is greater than a diameter of the top device electrode.

[0018] Optionally, the skyrmion memory array based on continuous artificial antiferromagnetic material also includes multiple voltage sources, and the voltage sources correspond one-to-one to the device electrode groups; the voltage sources are connected to the top device electrode and the bottom device electrode of the device electrode group corresponding to the voltage sources, and are used to send forward voltage pulses or reverse voltage pulses to the top device electrode and the bottom device electrode.

[0019] The present invention provides a skyrmion memory array based on continuous artificial antiferromagnetic materials, which enables multiple magnetic tunnel junctions capable of binary storage in the skyrmion memory array to share a continuous array free layer based on SAF materials as the free layer of each magnetic tunnel junction, so as to form a continuous SAF type device array structure, so that part of the magnetic tunnel junctions are not located at the edge of the free layer, and thus there is no need to reserve a buffer zone for the above-mentioned magnetic tunnel junctions, which can greatly improve the integration density of SAF Skyrmion VCMA-MRAM memory devices in magnetic random access memory, so that more SAF Skyrmion VCMA-MRAM memory devices can be accommodated in a unit area of ​​magnetic random access memory, thereby significantly improving the device integration density of the magnetic random access memory based on SAF Skyrmion VCMA-MRAM memory devices.

[0020] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of this application. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0022] Figure 1 A schematic diagram of the structure of an existing magnetic random access memory provided by an embodiment of the present invention is shown;

[0023] Figure 2 A schematic diagram of skyrmions in a free layer provided by an embodiment of the present invention is shown;

[0024] Figure 3 One of the structural schematic diagrams of a skyrmion memory array based on continuous artificial antiferromagnetic material provided by an embodiment of the present invention is shown;

[0025] Figure 4 A schematic structural diagram of a device electrode group provided by an embodiment of the present invention is shown;

[0026] Figure 5 A schematic structural diagram of a SAF Skyrmion VCMA-MRAM memory device in a skyrmion memory array based on a continuous artificial antiferromagnetic material provided by an embodiment of the present invention is shown;

[0027] Figure 6A second structural schematic diagram of a skyrmion memory array based on continuous artificial antiferromagnetic material provided by an embodiment of the present invention is shown;

[0028] Figure 7 The third structural schematic diagram of a skyrmion memory array based on continuous artificial antiferromagnetic material provided by an embodiment of the present invention is shown;

[0029] Figure 8 A schematic structural diagram of an array free layer provided with an electrode access port provided in an embodiment of the present invention is shown;

[0030] Fig. 9 A schematic diagram of the current direction of a transport current provided by an embodiment of the present invention is shown;

[0031] Fig.10a One of the schematic diagrams of skyrmion transport provided by an embodiment of the present invention is shown;

[0032] Fig.10b A second schematic diagram of skyrmion transport provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0033] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other without conflict.

[0034] Currently, if Figure 1As shown, each SAF Skyrmion VCMA-MRAM memory device 150 in the magnetic random access memory composed of SAF Skyrmion VCMA-MRAM memory devices 150 is independent of each other. Specifically, each SAF Skyrmion VCMA-MRAM memory device 150 is composed of a top electrode 151, a reference layer 157, a bottom electrode 152, a tunneling layer 153 sandwiched between the reference layer 157 and the bottom electrode 152, a bottom pressure-bearing layer 158 and a free layer 154. Furthermore, the top surface of the reference layer 157 is in contact with the top electrode 151, and the bottom surface of the reference layer 157 is in contact with the tunneling layer 153. Furthermore, the reference layer 157, tunneling layer 153 and free layer 154 of the SAF Skyrmion VCMA-MRAM memory device 150 form a magnetic tunnel junction that can realize binary storage based on the generation or annihilation of skyrmions. When a reverse voltage pulse is applied to the top electrode 151 and the bottom electrode 152, skyrmions are generated in the free layer 154 between the top electrode 151 and the bottom electrode 152. When a forward voltage pulse is applied to the top electrode 151 and the bottom electrode 152, skyrmions existing in the free layer 154 between the top electrode 151 and the bottom electrode 152 are annihilated. The computer device can be connected to the two electrodes in the SAF Skyrmion VCMA-MRAM memory device and realize binary storage by identifying the resistance difference of the magnetic tunnel junction in the free layer 154 of different SAF materials. However, the edge pinning of the free layer based on the SAF material will hinder the nucleation and annihilation of skyrmions. Figure 2 A schematic diagram of skyrmions on the free layer 154 is given, as shown in Figure 2 As shown, in the SAF Skyrmion VCMA-MRAM memory device 150 of the discrete skyrmion 155, a sufficient buffer area 156 needs to be reserved between the nucleation center of the skyrmion 155 and the edge of the free layer 154, and the skyrmion 155 cannot be too close to the edge of the free layer 154. This seriously restricts the integration and size reduction of the SAF Skyrmion VCMA-MRAM memory device 150, resulting in a low device integration density of the magnetic random access memory based on the SAF Skyrmion VCMA-MRAM memory device 150.

[0035] To solve the above problems, in one embodiment, Figure 3 As shown, a skyrmion memory array based on continuous artificial antiferromagnetic material is provided, wherein the skyrmion memory array based on continuous artificial antiferromagnetic material comprises an array free layer 100, a top tunneling layer 200, a lower pressure bearing layer 300 and a plurality of device electrode groups, wherein Figure 4As shown, each of the device electrode groups 400 includes a top device electrode assembly 410 and a bottom device electrode 420, and the top device electrode assembly 410 includes a top device electrode 411 and a tunnel junction reference layer 412, wherein the bottom surface of the top device electrode 411 is in contact with the top surface of the tunnel junction reference layer 412, and the top device electrode 411 and the tunnel junction reference layer 412 together constitute a cylindrical top device electrode assembly 410.

[0036] Furthermore, the top device electrode assembly 410 and the bottom device electrode 420 can be connected to an external voltage source V, respectively, and the voltage source V can be controlled to send a positive voltage pulse or a reverse voltage pulse to the top device electrode assembly 410 and the bottom device electrode 420. The material of the array free layer 100 can be SAF material.

[0037] Further, such as Figure 3 As shown, the array free layer 100 is disposed between the top tunneling layer 200 and the lower pressure-bearing layer 300 to form an information storage layer M; specifically, the bottom surface of the top tunneling layer 200 is in contact with the top surface of the array free layer 100, the bottom surface of the array free layer 100 is in contact with the top surface of the lower pressure-bearing layer 300, and the array free layer 100, the top tunneling layer 200 and the lower pressure-bearing layer 300 are disposed parallel to each other. Here, the top tunneling layer 200 and the lower pressure-bearing layer 300 are respectively composed of magnesium oxide or aluminum oxide.

[0038] Further, the top device electrode assembly 410 and the bottom device electrode 420 in the device electrode group are respectively disposed on the top surface and the bottom surface of the information storage layer M, where the top surface of the information storage layer M is the top surface of the top tunneling layer 200, and the bottom surface of the information storage layer M is the bottom surface of the lower pressure-bearing layer 300. Further, the projection of the top device electrode assembly 410 in a direction perpendicular to the array free layer 100 overlaps with the bottom device electrode 420.

[0039] Further, such as Figure 5As shown, the top device electrode assembly 410 includes a top device electrode 411 and a tunnel junction reference layer 412, the bottom surface of the top device electrode 411 contacts the top surface of the tunnel junction reference layer 412, the bottom surface of the tunnel junction reference layer 412 contacts the top surface of the top tunneling layer 200, and the top surface of the bottom device electrode 420 contacts the bottom surface of the lower pressure-bearing layer 300. A magnetic tunnel junction capable of binary storage is formed by a tunnel junction reference layer 412 in a device electrode group, an array free layer 100 within a projection coverage range of a top device electrode assembly 410 in a direction perpendicular to the array free layer 100, and a top tunneling layer 200 within a projection coverage range of a top device electrode assembly 410 in a direction perpendicular to the array free layer 100. Each magnetic tunnel junction serves as a core structure of a SAF Skyrmion VCMA-MRAM memory device, wherein the SAF Skyrmion VCMA-MRAM memory device includes a magnetic tunnel junction and a top device electrode assembly 410, a bottom device electrode 420, and a lower pressure-bearing layer 300 corresponding to the magnetic tunnel junction.

[0040] Furthermore, the top device electrode assembly 410 and the bottom device electrode 420 in each device electrode group can be arranged at different positions of the information storage layer M in the above-mentioned manner, and the magnetic tunnel junctions corresponding to each device electrode group share a continuous SAF material array free layer 100. Furthermore, a grounding terminal can be provided at the array free layer 100 to ground the array free layer 100, so as to realize the sharing of the grounding electrodes of each magnetic tunnel junction in the skyrmion memory array based on continuous artificial antiferromagnetic material, which can effectively reduce the size of the SAFSkyrmion VCMA-MRAM memory device corresponding to a single magnetic tunnel junction, thereby improving the integration density of the skyrmion memory array based on continuous artificial antiferromagnetic material.

[0041] Further, such as Figure 5 As shown, the top device electrode 411 is used to connect to an external voltage source V, and the voltage source V can be controlled to apply a forward voltage pulse or a reverse voltage pulse to the top device electrode 411. Further, the top device electrode 411 is connected to the tunnel junction reference layer 412, and the top device electrode 411 can be connected to an external computer device (not shown in the figure). At the same time, the tunnel junction reference layer 412 serving as a reference layer is in contact with the top tunneling layer 200; further, the bottom device electrode 420 is used to connect to an external voltage source V, and the voltage source V can be controlled to apply a forward voltage pulse or a reverse voltage pulse to the bottom device electrode 420. Further, the bottom device electrode 420 is in contact with the lower pressure-bearing layer 300.

[0042] The present embodiment provides a skyrmion memory array based on continuous artificial antiferromagnetic materials, so that multiple magnetic tunnel junctions capable of binary storage in the skyrmion memory array share a continuous array free layer based on SAF materials to form a continuous SAF-type device array structure, so that part of the magnetic tunnel junctions are not located at the edge of the free layer, and thus there is no need to reserve a buffer zone for the above-mentioned magnetic tunnel junctions, which can greatly improve the integration density of SAFSkyrmion VCMA-MRAM memory devices in the magnetic random access memory, so that more SAF Skyrmion VCMA-MRAM memory devices can be accommodated in the magnetic random access memory per unit area, and further, the ground electrodes of each magnetic tunnel junction in the skyrmion memory array based on continuous artificial antiferromagnetic materials are shared, which can effectively reduce the size of the SAFSkyrmion VCMA-MRAM memory device corresponding to a single magnetic tunnel junction, thereby significantly improving the device integration density of the magnetic random access memory based on the SAF Skyrmion VCMA-MRAM memory device.

[0043] In an optional embodiment, if Figure 6 As shown, the array free layer 100 includes an intermediate layer 110, a first magnetic layer 120 and a second magnetic layer 130; here, the materials of the first magnetic layer 120 and the second magnetic layer 130 can be cobalt iron boron or cobalt; further, the material of the intermediate layer 110 can be a metal material that can induce RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling, such as one of tungsten, ruthenium, platinum or tantalum, and further, the intermediate layer 110 is grounded. Here, the tunnel junction reference layer 412, the top tunneling layer 200 and the first magnetic layer 120 in a magnetic tunnel junction are the core structure of the magnetic tunnel junction, which is used to realize information reading and storage, and the intermediate layer 110 is used to improve the stability of the first magnetic layer 120 on it.

[0044] Furthermore, the intermediate layer 110 is disposed between the first magnetic layer 120 and the second magnetic layer 130, and the first magnetic layer 120 is in contact with the top tunneling layer 200. Here, the material of the top tunneling layer 200 is magnesium oxide (MgO) or aluminum oxide. The first magnetic layer 120 is made of cobalt iron boron (CoFeB) or cobalt (Co). The top tunneling layer 200 and the first magnetic layer 120 can form a top double interface of a magnetic tunnel junction.

[0045] Further, the second magnetic layer 130 is in contact with the lower pressure layer 300. Here, the material of the lower pressure layer 300 is magnesium oxide or aluminum oxide, and the material of the second magnetic layer 130 is cobalt iron boron or cobalt. The second magnetic layer 130 and the lower pressure layer 300 can form a bottom double interface of the magnetic tunnel junction. Further, the intermediate layer 110 is respectively connected to the first magnetic layer 120 and the second magnetic layer 130, and the intermediate layer 110, the first magnetic layer 120 and the second magnetic layer 130 are arranged in parallel.

[0046] Furthermore, in actual use, when the voltage source V is controlled to apply a reverse voltage pulse to the top device electrode 411 and the bottom device electrode 420 at the same time, skyrmions are nucleated in the array free layer 100 in the magnetic tunnel junctions corresponding to the top device electrode 411 and the bottom device electrode 420. When the voltage source V is controlled to apply a forward voltage pulse to the top device electrode 411 and the bottom device electrode 420 at the same time, skyrmions existing in the magnetic tunnel junctions corresponding to the top device electrode 411 and the bottom device electrode 420 are annihilated. Furthermore, a computer device can identify the resistance difference of the magnetic tunnel junction when the array free layer 100 is in the state with skyrmions and the state without skyrmions by connecting to the top device electrode 411, determine the information stored in the magnetic tunnel junction, and realize the binary storage and reading of "0" and "1". Here, when the magnetic tunnel junction is in a low resistance state, the magnetic tunnel junction stores data "1", and conversely, when the magnetic tunnel junction is in a high resistance state, the magnetic tunnel junction stores data "0".

[0047] Furthermore, Figure 7 A two-dimensional image of a skyrmion memory array based on continuous artificial antiferromagnetic materials is given, such as Figure 7 As shown, the top device electrode assembly 410 corresponding to each device electrode group can be arranged on the top surface of the top tunneling layer 200 and contact the top tunneling layer 200; further, the bottom device electrode 420 corresponding to each device electrode group can be arranged with the information storage layer M between the top device electrode assembly 410 corresponding to the device electrode group, and the projection of the top device electrode assembly 410 of the device electrode group in the direction perpendicular to the information storage layer M coincides with the bottom device electrode 420 of the device electrode group.

[0048] Further, the distance between the electrode centers of any two of the top device electrodes is greater than the diameter of the top device electrode. Specifically, the top device electrode and the bottom device electrode may be in the shape of a cylinder, the electrode center of the top device electrode may be the center point of a projection image of the top device electrode in a direction perpendicular to the information storage layer, that is, the center of the bottom surface of the top device electrode, the diameter of the top device electrode may be the diameter of the bottom surface of the top device electrode, and the diameter of the bottom device electrode may be the diameter of the bottom surface of the bottom device electrode. Further, the distance between the electrode centers of any two of the top device electrodes may be greater than 85 mm; further, the diameter of the top device electrode is the same as the diameter of the bottom device electrode, and the diameter of the top device electrode and the diameter of the bottom device electrode are greater than 55 mm.

[0049] The embodiments provided in the present application enable the magnetic tunnel junction to have a top-bottom dual interface, which has lower operating voltage and power consumption than a storage device with a single interface, and reduces the difficulty of manipulating skyrmions, thereby reducing the risk of device breakdown caused by the magnetic tunnel junction and having higher feasibility.

[0050] In an optional embodiment, the skyrmion memory array based on continuous artificial antiferromagnetic materials further includes a plurality of voltage sources, and the voltage sources correspond to the device electrode groups one by one; here, the voltage sources can be connected to a remote host computer to output a forward voltage pulse or a reverse voltage pulse in a controlled manner. As an example, if the skyrmion memory array based on continuous artificial antiferromagnetic materials includes n device electrode groups, the number of voltage sources in the skyrmion memory array based on continuous artificial antiferromagnetic materials is also n, and each voltage source is connected to a top device electrode and a bottom device electrode of a specific device electrode group, and is used to send a forward voltage pulse or a reverse voltage pulse to the top device electrode and the bottom device electrode.

[0051] Here, when the voltage source sends a reverse voltage pulse to the top device electrode and the bottom device electrode of a device electrode group, skyrmions nucleate in the magnetic tunnel junction where the device electrode group is located, and when the voltage source sends a forward voltage pulse to the top device electrode and the bottom device electrode of a device electrode group, skyrmions existing in the magnetic tunnel junction where the device electrode group is located are annihilated.

[0052] The embodiments provided in the present application can control the voltage pulse output state of each voltage source in the skyrmion memory array based on continuous artificial antiferromagnetic materials, control the data storage process of the skyrmion memory array based on continuous artificial antiferromagnetic materials, and improve the operability of the skyrmion memory array based on continuous artificial antiferromagnetic materials.

[0053] In an optional embodiment, if Figure 8As shown, the side of the array free layer 100 has a plurality of electrode access ports P, and each of the electrode access ports P is located at a different position of the side, so that when voltages of different voltage levels are applied to any two electrode access ports P, a transport current for directional electrical transport of skyrmions is generated in the array free layer 100. Here, the side of the array free layer 100 is perpendicular to the contact surface between the array free layer 100 and the top tunneling layer (not shown in the figure). Here, the current direction of the transport current is the direction from the electrode access port P connected to the high voltage level voltage to the electrode access port P connected to the low voltage level voltage.

[0054] In actual use, such as Fig. 9 As shown, if one of the electrode access ports P on the side of the array free layer 100 is connected to the first voltage V1, and the other electrode access port P on the side of the array free layer 100 is connected to the second voltage V2, where the voltage level of the first voltage V1 is higher than the voltage level of the second voltage V2, then a voltage difference is formed between the electrode access port P connected to the first voltage V1 and the electrode access port P connected to the second voltage V2, thereby generating a transport current on the array free layer 100, and the current direction of the transport current is from the electrode access port P connected to the first voltage V1 to the electrode access port P connected to the second voltage V2.

[0055] Furthermore, the skyrmion memory array based on continuous artificial antiferromagnetic materials provided by the present application can transport skyrmions in the free layer of the array by controlling the direction of the transport current in the free layer of the array. Furthermore, when skyrmions are transported to a certain device electrode group, a capture voltage is sent to the device electrode group to capture the skyrmions. As an example, Fig.10a As shown in FIG. 1 , at the first moment, there are three skyrmions 155 in the first region A of the array free layer, and the direction of the transport current is from left to right. Further, after a certain period of time, as shown in FIG. Fig.10b As shown, three skyrmions 155 are transported to the second region B in the array free layer. At this time, if a capture voltage is output to the device electrode group in the second region B, the skyrmions 155 will be captured.

[0056] The embodiments provided in the present application can generate a transport current in the array free layer of a skyrmion memory array based on a continuous artificial antiferromagnetic material, realize the electrical transport of skyrmions, and apply a capture voltage to the region of the device electrode passing through during the transport of skyrmions to realize skyrmion capture, thereby enabling the setting of various logic function arrays.

[0057] The present embodiment provides a skyrmion memory array based on continuous artificial antiferromagnetic materials, so that multiple magnetic tunnel junctions capable of binary storage in the skyrmion memory array share a continuous array free layer based on SAF materials to form a continuous SAF type device array structure, so that part of the magnetic tunnel junctions are not located at the edge of the free layer, and thus there is no need to reserve a buffer zone for the above-mentioned magnetic tunnel junctions; at the same time, each magnetic tunnel junction shares a ground terminal, which can reduce the space occupied by the magnetic tunnel junction as a skyrmion VCMA-MRAM memory device, and can greatly improve the integration density of the SAF Skyrmion VCMA-MRAM memory device in the magnetic random access memory, thereby significantly improving the device integration density of the magnetic random access memory based on the SAF Skyrmion VCMA-MRAM memory device. At the same time, continuous SAF materials can be used to provide a basic hardware foundation and operating space for the transport of skyrmions between devices and the design of logic function arrays.

[0058] The above serial numbers of this application are only for description and do not represent the advantages and disadvantages of the implementation scenarios. The above disclosure is only a few specific implementation scenarios of this application, but this application is not limited to them, and any changes that can be thought of by technicians in this field should fall within the scope of protection of this application.

Claims

1. A skyrmion memory array based on continuous artificial antiferromagnetic material, characterized in that: The skyrmion memory array based on continuous artificial antiferromagnetic material comprises an array free layer, a top tunneling layer, a lower pressure-bearing layer and a plurality of device electrode groups, wherein each of the device electrode groups comprises a top device electrode assembly and a bottom device electrode, and the top device electrode assembly comprises a top device electrode and a tunnel junction reference layer; The array free layer is disposed between the top tunneling layer and the lower pressure-bearing layer to form an information storage layer; The top device electrode assembly and the bottom device electrode in the device electrode group are respectively arranged on the top surface and the bottom surface of the information storage layer, and the projection of the top device electrode assembly along the direction perpendicular to the array free layer coincides with the bottom device electrode, wherein the bottom surface of the top device electrode contacts the top surface of the tunnel junction reference layer, the bottom surface of the tunnel junction reference layer contacts the top surface of the top tunneling layer, and the top surface of the bottom device electrode contacts the bottom surface of the lower pressure-bearing layer; The tunnel junction reference layer in the device electrode group, the array free layer within the projection coverage of the top device electrode assembly in the device electrode group in a direction perpendicular to the array free layer, and the top tunneling layer constitute a magnetic tunnel junction capable of binary storage.

2. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 1, characterized in that: The top tunneling layer and the lower pressure-bearing layer are made of magnesium oxide or aluminum oxide.

3. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 1, characterized in that: The array free layer includes an intermediate layer, a first magnetic layer and a second magnetic layer; The intermediate layer is disposed between the first magnetic layer and the second magnetic layer, the first magnetic layer is in contact with the top tunneling layer, and the second magnetic layer is in contact with the lower bearing layer.

4. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 3, characterized in that: The middle layer is grounded.

5. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 3, characterized in that: The first magnetic layer and the second magnetic layer are made of cobalt iron boron.

6. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 3, characterized in that: The first magnetic layer and the second magnetic layer are made of cobalt.

7. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 3, characterized in that: The material of the intermediate layer is one of tungsten, ruthenium, platinum or tantalum.

8. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 3, characterized in that: The side surface of the array free layer has a plurality of electrode access ports, each of which is located at a different position of the side surface, so that when voltages of different voltage levels are applied to any two electrode access ports, a transport current for directional electrical transport of skyrmions is generated in the array free layer; The current direction of the transport current is from the electrode access port connected to the voltage of the high voltage level to the electrode access port connected to the voltage of the low voltage level.

9. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 1, characterized in that: The distance between the electrode centers of any two of the top device electrodes is greater than the diameter of the top device electrodes.

10. The skyrmion memory array based on continuous artificial antiferromagnetic material according to claim 1, characterized in that: The skyrmion memory array based on continuous artificial antiferromagnetic material further comprises a plurality of voltage sources, and the voltage sources correspond to the device electrode groups one by one; The voltage source is connected to the top device electrode and the bottom device electrode of the device electrode group corresponding to the voltage source, and is used to send a forward voltage pulse or a reverse voltage pulse to the top device electrode and the bottom device electrode.

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