Bidirectional laser silicon carbide crystal ingot processing device and processing method

Abstract

The bidirectional laser silicon carbide crystal ingot machining device comprises a first laser assembly, a second laser assembly and a rotary table, in the first laser assembly, laser emitted by a first laser device sequentially passes through a first reflecting mirror and a first laser focusing mirror and then vertically and downwards reaches the rotary table and the second laser assembly; laser emitted by the second laser sequentially passes through a second reflecting mirror, a third reflecting mirror, a second laser focusing mirror and a fourth reflecting mirror and then vertically and upwards reaches the rotary table; the rotary table comprises a C-axis module, a B-axis module and a machining seat, the C-axis module is used for driving a to-be-machined crystal ingot to rotate, and the B-axis module is used for driving the crystal ingot to swing in a vertical plane; and a corresponding linear moving module is also configured. The device can effectively improve the laser processing efficiency, process the cylindrical crystal ingot, maximally utilize the raw materials and reduce the cost, and is simple in structure, easy to control and suitable for cutting the silicon carbide crystal ingot with large thickness, high hardness, high manufacturing cost and high precision.

Description

Technical Field

[0001] The present invention relates to the field of laser processing technology, and in particular to a bidirectional laser silicon carbide ingot processing device and a processing method. Background Art

[0002] Laser processing uses the energy of light to reach a very high energy density at the focal point after being focused by a lens, and relies on the photothermal effect for processing. It uses the high energy and high focusing properties of the laser beam to heat, melt, evaporate, and burn the surface of the workpiece to achieve operations such as cutting, engraving, welding, punching, surface modification, and grinding of materials. It has the advantages of fast processing speed, small surface deformation, and the ability to process a variety of materials. Therefore, it is widely used in various industrial manufacturing fields.

[0003] Most of the existing laser processing technologies only use a single direction, such as cutting from top to bottom. When the side or bottom of the workpiece needs to be processed, the current laser processing needs to be stopped and the laser processing can only be performed again after the workpiece is flipped over. Or when the workpiece needs to be deeply cut, due to the large cutting depth, single-sided processing takes more time, and the width of the cutting groove will also increase accordingly. More material needs to be cut and removed, which consumes more energy and affects the efficiency of laser processing.

[0004] The existing method of processing workpieces using only single-wavelength lasers is difficult to meet the increasingly stringent requirements for workpiece processing efficiency and processing quality. Instead, there is a greater tendency to use dual-wavelength or multi-band lasers to process workpieces. However, the existing dual-wavelength or multi-band laser processing technology is not yet mature and there are still some problems that are not conducive to meeting complex processing requirements.

[0005] At the same time, in the existing laser processing technology, in conventional laser processing, since the conventional laser beam is a cone-shaped laser beam, it is difficult to achieve taper-free cutting, such as Figure 1 As shown, the inner wall or cutting edge processed by the laser is not vertical, forming an inclined surface, and it is difficult to obtain a cylindrical shape with the side and bottom completely vertical, forming a frustum. Although the laser micro-water jet technology can be used to solve this problem and obtain high-quality processed walls and cutting edges, the equipment cost is high, and the high-power density laser in the water beam will cause a large loss of laser beam energy due to continuous reflection and absorption, which limits its high-power application and slows down the cutting speed; during the processing, due to the high energy density of the laser and the rapid heating and cooling process, micro cracks may be generated inside the material, affecting the quality and strength of the processed parts, especially precision workpieces, such as semiconductor silicon wafers, which directly affect the quality of the finished product; and the current water-guided laser processing technology is difficult to further improve its cutting accuracy due to the stability of the water beam, the effective length, and the size control of the laser spot, and has poor adaptability under different material and thickness conditions.

[0006] Therefore, new solutions need to be sought for the processing of materials such as silicon carbide ingots that are thick, hard, expensive, and high-precision. Summary of the invention

[0007] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide a bidirectional laser silicon carbide ingot processing device with high processing efficiency, good quality, material saving, simple structure, easy control and low cost, as well as a processing method using the device, which is suitable for the processing of silicon carbide ingots with large thickness, high hardness, high precision and high price.

[0008] The present invention is achieved through the following technical solutions:

[0009] A bidirectional laser silicon carbide ingot processing device comprises a first laser assembly, a second laser assembly and a turntable; the turntable is used to carry and rotate the ingot to be processed; the first laser assembly comprises a first laser, a first reflector and a first laser focusing mirror, the laser emitted by the first laser is reflected by the first reflector and focused by the first laser focusing mirror in turn, and then the ingot to be processed on the turntable is processed vertically downward from top to bottom; the second laser assembly comprises a second laser, a second reflector, a third reflector, a fourth reflector and a second laser focusing mirror, the laser emitted by the second laser is reflected by the second reflector and the third reflector in turn, focused by the second laser focusing mirror and reflected by the fourth reflector in turn, and then the ingot to be processed on the turntable is processed vertically upward from bottom to top, and the first laser assembly and the second laser assembly jointly complete the cutting of the entire ingot depth;

[0010] The turntable includes a C-axis module, a B-axis module and a processing seat, the C-axis module is arranged on the B-axis module, the processing seat is installed on the C-axis module, the ingot to be processed is fixed on the processing seat, the C-axis module is used to drive the ingot to be processed to rotate around its vertical center axis, and the B-axis module is used to drive the ingot to be processed to swing in a vertical plane, so that the vertical center axis of the ingot to be processed is tilted relative to the vertical direction, so as to eliminate the cutting effect of the conical laser beam on the side of the ingot, thereby processing a cylindrical ingot with the side surface and the bottom surface completely perpendicular.

[0011] Further, the turntable further comprises a first Y-axis moving module, and the B-axis module is mounted on the first Y-axis moving module;

[0012] The first laser assembly further includes a first X-axis moving module, a first Z-axis moving module and a first laser cutting head, wherein the first Z-axis moving module is mounted on the first X-axis moving module, the first laser cutting head is mounted on the first Z-axis moving module, the first laser focusing lens is arranged in the first laser cutting head, and the output end of the first laser cutting head is vertically downward toward the ingot to be processed on the processing seat;

[0013] The second laser assembly also includes a second X-axis moving module, a second Y-axis moving module, a second Z-axis moving module and a second laser cutting head. The second Z-axis moving module is installed on the second X-axis moving module, the second Y-axis moving module is installed on the second Z-axis moving module, the second laser cutting head is installed on the second Y-axis moving module, the second laser focusing mirror and the fourth reflecting mirror are arranged in the second laser cutting head, and the output end of the second laser cutting head is vertically upward toward the ingot to be processed on the processing seat.

[0014] Furthermore, it also includes a positioning component, which includes a support column, a third Z-axis moving module and an annular positioning light. The third Z-axis moving module is installed on the support column, and several concentric annular positioning lights are installed on the third Z-axis moving module. The positioning area is arranged on the moving path of the first Y-axis moving module and is located directly below the annular positioning light. A circular vacuum suction cup is arranged on the top of the processing seat, and the vacuum suction cup is connected to a vacuum generating device for fixing the crystal ingot to be processed by vacuum adsorption. The annular positioning light projects positioning rings for positioning the vacuum suction cup and the crystal ingot to be processed on the positioning area, and the third Z-axis moving module drives the annular positioning light to move up and down along the support column to project concentric positioning rings but different diameters to adapt to the processing of crystal ingots of different diameters. Driven by the first Y-axis moving module, the processing seat positions the center of the vacuum suction cup and the crystal ingot to be processed to the center of the corresponding positioning ring.

[0015] Furthermore, the first laser assembly also includes a third laser and a fifth reflector, the first laser is used to emit a first wavelength laser, the first reflector is used to reflect the first wavelength laser emitted by the first laser, the third laser is used to emit a second wavelength laser, and the fifth reflector is used to reflect the second wavelength laser emitted by the third laser; the first laser and the third laser are both located above the turntable, the first reflector and the fifth reflector are arranged in parallel up and down, the first reflector is located above the fifth reflector, the first reflector is a total reflector, and the fifth reflector is a coated semi-transparent and semi-reflective mirror, which reflects the second wavelength laser while allowing the first wavelength laser to pass through, the first wavelength laser emitted by the first laser is reflected by the first reflector, and then passes through the fifth reflector, and is output in the same optical path as the second wavelength laser emitted by the third laser and reflected by the fifth reflector, and is focused on the first laser focusing mirror, and then vertically downward to reach the ingot to be processed on the turntable.

[0016] Furthermore, the second laser assembly also includes a fourth laser and a sixth reflector, the second laser is used to emit a third wavelength laser, the second reflector is used to reflect the third wavelength laser emitted by the second laser, the fourth laser is used to emit a fourth wavelength laser, and the sixth reflector is used to reflect the fourth wavelength laser emitted by the fourth laser; the second laser and the fourth laser are both located above the turntable, the second reflector and the sixth reflector are arranged in parallel up and down, the second reflector is located above the sixth reflector, the second reflector is a total reflector, and the sixth reflector is a coated semi-transparent and semi-reflective mirror, which reflects the fourth wavelength laser while allowing the third wavelength laser to pass through, the third wavelength laser emitted by the second laser is reflected by the second reflector, and then passes through the sixth reflector, and is output in the same optical path as the fourth wavelength laser emitted by the fourth laser and reflected by the sixth reflector, and then passes through the second reflector, the third reflector, the second laser focusing mirror, and the fourth reflector in sequence, and then vertically reaches the ingot to be processed on the turntable.

[0017] Furthermore, the B-axis module includes a swing motor, a swing plate and a swing arm, one end of the swing plate is vertically connected to the output shaft of the swing motor, and the other end is vertically connected to the swing arm; the C-axis module includes a rotating motor, which is installed on the swing arm, the processing seat is drive-connected to the rotating motor, and the rotating axis of the processing seat is perpendicular to the rotating axis of the swing motor.

[0018] Furthermore, the B-axis module is used to drive the ingot to be processed to swing in a vertical plane, so that the vertical center axis of the ingot to be processed is deflected by an angle α relative to the vertical direction, α=θ / 2, where θ is the cone angle of the conical laser beam, D is the diameter of the beam incident on the first laser focusing mirror, W D is the distance between the first laser focusing mirror and its laser focus.

[0019] A bidirectional laser silicon carbide ingot processing method, using the bidirectional laser silicon carbide ingot processing device, comprises the following steps:

[0020] S1. Setting parameters on the control system, including the diameter and thickness of the final ingot product, the depth ratio of the first laser component and the second laser component, the parameters of the V-shaped cutting groove, the laser parameters and the speed n of the C-axis module. The control system calculates the deflection angle α of the B-axis module according to the set parameters, automatically plans the laser cutting path for the layered processing of the first laser component and the second laser component, and calculates the processing time;

[0021] The parameters of the V-shaped cutting groove include the maximum width L of the V-shaped cutting groove, the angle β of the two sides of the V-shaped cutting groove and the laser depth step H, wherein the laser depth step H is the distance between two adjacent layers in layered processing, and the laser parameters include laser power, laser frequency, pulse width and duty cycle; the deflection angle α=θ / 2, wherein θ is the cone angle of the conical laser beam, D is the diameter of the beam incident on the first laser focusing mirror, W D is the distance between the first laser focusing mirror and its laser focus;

[0022] S2, move and position the crystal ingot to be processed to the processing area, and then control the B-axis module according to the deflection angle α to make the crystal ingot to be processed swing in the vertical direction, so that the angle between its vertical center axis and the vertical direction is α; then control the first laser assembly and the second laser assembly to make the diameters of the light beams incident on the first laser focusing mirror and the second laser focusing mirror equal, and the optical parameters of the first laser focusing mirror and the second laser focusing mirror are also the same, that is, the shapes of the conical laser beams output by the first laser assembly and the second laser assembly are exactly the same, so as to ensure that the processed side surfaces are perpendicular to the bottom surface; then use the CCD automatic focusing system to focus the lasers output by the first laser assembly and the second laser assembly on the upper and lower surfaces of the crystal ingot to be processed, and cut the side surfaces of the crystal ingot according to the planned laser cutting path;

[0023] S3. After the side cutting of the crystal ingot is completed, the control system controls the B-axis module to swing the crystal ingot in the vertical direction, so that its vertical center axis returns to the vertical direction, and focuses the lasers output by the first laser assembly and the second laser assembly onto the upper and lower surfaces of the crystal ingot respectively, and cooperates with the movement of the linear motion module and the C-axis module to process the upper and lower surfaces of the crystal ingot according to the planned laser processing path.

[0024] Furthermore, in the laser cutting path of the layered processing of the first laser component and the second laser component in step S1, the width of each layer on the laser cutting path corresponding to the first laser component gradually narrows from top to bottom, and the width of each layer on the laser cutting path corresponding to the second laser component gradually narrows from bottom to top, and finally forms the V-shaped cutting groove on the vertical cross section, and the angle β between the two sides of the V-shaped cutting groove is θ, θ is the cone angle of the conical laser beam, Where D is the diameter of the beam incident on the first laser focusing mirror, W D is the distance between the first laser focusing mirror and the laser focus; when processing each layer, a path is adopted to process from the inside to the outside or from the outside to the inside, one ring at a time;

[0025] The parameters of the laser cutting path include the processing width L of each layer n, laser width step amount M, laser moving speed V, the processing width L of each layer is the processing width of each layer during layered processing, the laser width step amount M is the step amount between two adjacent rings when the laser processes one ring at a time on each layer, and the laser moving speed V is the cutting linear speed when the laser processes one ring at a time, V=πr·n / 30, mm / s, wherein r is the rotation radius at the cutting point, mm; π is a constant of 3.14, dimensionless; and n is the rotation speed of the C-axis, revolutions / min.

[0026] Furthermore, in step S2, the method for moving and positioning the ingot to be processed to the processing area is as follows: a first Y-axis moving module is arranged on the turntable, and the B-axis module is installed on the first Y-axis moving module; a plurality of concentric annular positioning lamps that can be raised and lowered are arranged above the positioning area, a vacuum suction cup is arranged on the top of the processing seat, and the center of the vacuum suction cup is located on the rotating shaft of the processing seat; the height of the annular positioning lamp is adjusted according to the size of the ingot to be processed, and the corresponding concentric vacuum suction cups and positioning rings corresponding to the size of the ingot are projected in the positioning area respectively, and the vacuum suction cups are first moved to the corresponding positioning rings by controlling the linear moving module so that the center of the vacuum suction cups is aligned with the center of gravity of the positioning ring corresponding to the vacuum suction cups, and then the ingot to be processed is placed on the vacuum suction cups so that the center of the ingot to be processed coincides with the center of gravity of the positioning ring corresponding to the ingot, and then the ingot to be processed is fixed by vacuum adsorption, and then the first Y-axis moving module is controlled to move the ingot to be processed to the processing area at the first laser assembly and the second laser assembly.

[0027] Compared with the prior art, the present invention has the following beneficial technical effects: by arranging the first laser assembly and the second laser assembly to laser process the crystal ingot from two opposite directions at the same time, the efficiency of laser processing can be effectively improved, and the process of flipping the crystal ingot can be avoided. Compared with the unidirectional deep cutting solution, less material can be cut and removed, and the raw materials can be used to the maximum extent, and the cost can be reduced. It is suitable for the processing of silicon carbide crystal ingots with high price, large thickness and high hardness; by arranging the B-axis module on the basis of the conventional processing platform, the processing platform is driven to swing in the vertical direction, so that the crystal ingot to be processed is placed obliquely, and its central axis is aligned with the conical laser. The sides of the light beam are parallel, so that the sides of the cut ingot are parallel to the central axis and perpendicular to the bottom of the ingot, so as to obtain a cylindrical ingot, which overcomes the defect of the cut side being tilted due to the tapered edge of the tapered laser beam when conventional laser cutting the side. Compared with the problems of high equipment cost, large laser energy loss, slow cutting speed, easy microcracks inside the precision material, poor stability, and difficulty in control in the water-guided laser technology, this scheme has many advantages such as simple structure, easy operation and control, and low cost. It is especially suitable for cutting silicon carbide ingots with large thickness, high hardness, and high precision. For silicon carbide ingot materials, The cutting of the side of the ingot adopts a layered step-by-step processing method, and the width becomes narrower layer by layer from top to bottom, and finally a V-shaped processing groove is formed in the vertical cross section, which can save the material to be cut and removed to the maximum extent, and also improve the processing efficiency. It is suitable for the processing of high-priced, thick, and hard silicon carbide ingots; by arranging two groups of lasers on the first laser component and the second laser component to emit two groups of laser beams of different bands, and coupling the two groups of lasers of different bands through a semi-transparent and semi-reflective mirror, a dual-band laser beam is obtained, so that the laser beam can combine the advantages of two or more bands of lasers, and improve the intensity of laser output , improve the efficiency of laser processing, especially suitable for laser cutting of materials with large thickness and high hardness such as silicon carbide ingots; through the design of the first laser component, the second laser component and the linear motion modules and the rotating and swinging modules on the turntable, the first laser component and the second laser component and the turntable can cooperate with each other, and the ingot to be processed on the turntable can be processed at the same time, and the processing process is easy to control; by setting a ring positioning light that can be raised and lowered, positioning rings of different diameters can be obtained, and in conjunction with the linear motion module on the turntable, the automatic positioning and movement of the workpiece can be realized, further improving the efficiency and accuracy of laser processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic structural diagram of an embodiment of the present invention.

[0029] Figure 2 Schematic diagram of the optical path of an embodiment of the present invention.

[0030] Figure 3 It is a schematic diagram of the principle of the prior art in the background technology of the present invention.

[0031] Figure 4 Schematic diagram of the processing of an embodiment of the present invention.

[0032] Figure 5 It is a schematic diagram of the principle of the prior art comparative example in the embodiment of the present invention.

[0033] Figure 6 Schematic diagram of the principle of an embodiment of the present invention.

[0034] Figure 7 It is a schematic diagram of partial enlarged structure of the turntable and the second laser assembly in an embodiment of the present invention.

[0035] Figure 8 It is a schematic diagram of the structure of the positioning component in an embodiment of the present invention.

[0036] Fig. 9 Schematic diagram of the structure of the turntable in the embodiment of the present invention.

[0037] Fig.10 Schematic diagram of the structure of another implementation of the turntable in the embodiment of the present invention.

[0038] Fig.11 It is a schematic diagram of the side structure of the turntable in an embodiment of the present invention.

[0039] Fig.12 It is a schematic diagram of workpiece positioning in an embodiment of the present invention.

[0040] Fig.13 Schematic diagram of a positioning ring in an embodiment of the present invention.

[0041] Fig.14 This is the optical path principle of another implementation method of the embodiment of the present invention.

[0042] Fig.15 Schematic diagram of the path for cutting the side of the ingot in an embodiment of the present invention.

[0043] Fig.16 It is a schematic diagram of the layered processing when cutting the side of the crystal ingot in an embodiment of the present invention.

[0044] Fig.17 Schematic diagram of the path in the depth direction when the side of the ingot is cut in an embodiment of the present invention.

[0045] Fig.18 Schematic diagram of the path in the width direction when the side of the ingot is cut in an embodiment of the present invention.

[0046] Fig.19 The figure is a workflow diagram of the processing method according to the embodiment of the present invention.

[0047] Figure numerals: 1-first laser assembly; 2-second laser assembly; 3-turntable; 4-ingot; 5-laser beam; 6-positioning assembly; 11-first laser; 12-first reflector; 13-first laser focusing mirror; 14-third laser; 15-fifth reflector; 16-first X-axis moving module; 17-first Z-axis moving module; 18-first laser cutting head; 19-first CCD automatic focusing system; 21-second laser; 22-second reflector; 23-third reflector; 24-second laser focusing mirror; 25-fourth reflector; 26-fourth laser; 27-sixth reflector Mirror; 201-second X-axis moving module; 202-second Z-axis moving module; 203-second Y-axis moving module; 204-second laser cutting head; 205-second CCD automatic focusing system; 31-first Y-axis moving module; 32-B-axis module; 33-C-axis module; 34-processing seat; 35-vacuum suction cup; 321-swing motor; 322-swing plate; 323-swing arm; 331-rotating motor; 61-support column; 62-third Z-axis moving module; 63-annular positioning lamp; 64-positioning ring; 41-vertical center axis; 42-side; 43-V-shaped cutting groove. DETAILED DESCRIPTION

[0048] A bidirectional laser silicon carbide ingot processing device, such as Figure 1 , Figure 2 As shown, it includes a first laser component 1, a second laser component 2 and a turntable 3; the turntable 3 is used to carry and rotate the ingot 4 to be processed; the first laser component 1 includes a first laser 11, a first reflector 12 and a first laser focusing mirror 13, the laser emitted by the first laser 11 is reflected by the first reflector 12 and focused by the first laser focusing mirror 13 in sequence, and then the ingot 4 to be processed on the turntable 3 is processed vertically downward from top to bottom; the second laser component 2 includes a second laser 21, a second reflector 22, a third reflector 23, a fourth reflector 25 and a second laser focusing mirror 24, the laser emitted by the second laser 21 is reflected by the second reflector 22 and the third reflector 23 in sequence, focused by the second laser focusing mirror 24 and reflected by the fourth reflector 25, and then the ingot 4 to be processed on the turntable 3 is processed vertically upward from bottom to top. The first laser assembly 1 and the second laser assembly 2 process the crystal ingot 4 from the upper and lower directions respectively, and can grind and polish the upper and lower surfaces of the crystal ingot 4 at the same time, and can also cut the crystal ingot 4 at the same time, and jointly complete the cutting of the entire crystal ingot 4 in depth, so as to process the side surface 42 of the crystal ingot 4, which can improve the efficiency of laser processing and is different from unidirectional cutting ( Figure 2 , Figure 5 ) compared to Figure 6 As shown, the material removed by cutting can also be reduced (i.e., Figure 6 and Figure 5Compared with traditional cutting machines, the volume of the cutting groove is smaller), which maximizes the utilization of raw materials and reduces costs.

[0049] The second laser assembly 2 processes the crystal ingot 4 from bottom to top, with the laser pointing vertically upward. Generally, due to spatial layout issues, the laser is installed above the workpiece to be processed, so multiple reflectors are required to change the laser light path to save space as much as possible.

[0050] The turntable 3 includes a C-axis module 33, a B-axis module 32 and a processing seat 34. The C-axis module 33 is arranged on the B-axis module 32, and the processing seat 34 is installed on the C-axis module 33. The crystal ingot 4 to be processed is fixed on the processing seat 34. The C-axis module 33 is used to drive the crystal ingot 4 to be processed to rotate around its vertical center axis 41, and the B-axis module 32 is used to drive the crystal ingot 4 to be processed to swing in a vertical plane, so that the vertical center axis 41 of the crystal ingot 4 to be processed is inclined relative to the vertical direction (Z-axis direction) to eliminate the cutting effect of the conical laser beam 5 on the side 42 of the crystal ingot 4, thereby processing a cylindrical crystal ingot 4 with the side 42 completely perpendicular to the bottom surface.

[0051] The C-axis module 33 rotates the ingot 4 and cooperates with the laser to cut the side 42 of the ingot 4. The B-axis module 32 tilts the ingot 4 during processing. The central axis of the ingot 4 tilts at an angle relative to the vertical direction, which can eliminate the phenomenon that the side 42 of the processed ingot 4 has a certain taper due to the conical laser beam 5 and cannot be completely perpendicular to the bottom surface, and the ingot 4 presents a cone-shaped phenomenon with a small top and a large bottom (such as Figure 3 Specifically, the B-axis module 32 drives the ingot 4 to be processed to swing in a vertical plane. Figure 4 , Figure 6 , so that the vertical center axis 41 of the ingot 4 to be processed is deflected by an angle α relative to the vertical direction (Z-axis direction), α=θ / 2, where θ is the cone angle of the conical laser beam 5, and θ can be To calculate, then D is the diameter of the beam incident on the first laser focusing mirror 13, W D is the distance between the first laser focusing mirror 13 and its laser focus, which can also be replaced by focal length. In this way, the vertical center axis 41 of the ingot 4 and the side of the conical laser beam 5 close to the ingot 4 are parallel to each other. When the ingot 4 rotates around its vertical center axis 41, the area swept by the side of the conical laser beam 5 on the ingot 4 forms the side 42 of the ingot 4. The side 42 of the ingot 4 can be parallel to its vertical center axis 41, while the vertical center axis 41 of the ingot 4 is perpendicular to its bottom surface. In this way, the side 42 of the ingot 4 can be completely perpendicular to the bottom surface.

[0052] By controlling the parameters of the laser output by the first laser component 1 and the second laser component 2 to be consistent, the taper angle θ of the upper and lower processed conical laser beams 5 can be made consistent. The B-axis module 32 causes the crystal ingot 4 to deflect at an angle α=θ / 2. The side edges of the upper and lower conical laser beams 5 can be kept parallel to the vertical center axis 41 of the crystal ingot 4. The processed side edges can be parallel to the vertical center axis 41, thereby forming a cylindrical crystal ingot 4.

[0053] As one of the implementation methods, Figure 7 , Figure 8 As shown, the B-axis module 32 includes a swing motor 321, a swing plate 322 and a swing arm 323, one end of the swing plate 322 is vertically connected to the output shaft of the swing motor 321, and the other end is vertically connected to the swing arm 323; the C-axis module 33 includes a rotating motor 331, the rotating motor 331 is installed on the swing arm 323, the processing seat 34 is drivingly connected to the rotating motor 331, and the rotating axis of the processing seat 34 is perpendicular to the rotating axis of the swing motor 321; a vacuum suction cup 35 is arranged on the top of the processing seat 34, and the vacuum suction cup 35 is connected to a vacuum generating device for fixing the ingot 4 to be processed by vacuum adsorption. The rotating motor 331 and the processing seat 34 can be arranged on the swing arm 323 at the same time, and the output shaft of the rotating motor 331 is parallel to the rotating axis of the processing seat 34 (such as Fig. 9 ) or vertical (such as Fig.10 ), the output shaft of the rotating motor 331 and the rotating shaft of the processing seat 34 can be connected through gear transmission. The swing motor 321 drives the swing plate 322 to rotate on the vertical plane, thereby driving the swing arm 323 and the C-axis module 33 to swing in the vertical direction, such as Fig.11 The rotary motor 331 drives the processing seat 34 and the crystal ingot 4 to be processed thereon to rotate around the central axis of the processing seat 34 .

[0054] To realize the simultaneous processing of the upper and lower ingots 4, the rotation and linear movement of the ingot 4 to be processed need to be coordinated with the movement of the upper and lower lasers. As one of the implementation methods, in this embodiment, Figure 1 , Figure 7 The turntable 3 further includes a first Y-axis moving module 31, and the B-axis module 32 is mounted on the first Y-axis moving module 31. The first laser assembly 1 further includes a first X-axis moving module 16, a first Z-axis moving module 17 and a first laser cutting head 18, wherein the first Z-axis moving module 17 is mounted on the first X-axis moving module 16, the first laser cutting head 18 is mounted on the first Z-axis moving module 17, the first laser focusing lens 13 is arranged in the first laser cutting head 18, and the output end of the first laser cutting head 18 is vertically downward toward the ingot 4 to be processed on the processing seat 34; the first laser assembly 1 is also provided with a first CCD automatic focusing system 19 for automatic focusing according to visual technology.

[0055] The second laser assembly 2 further includes a second X-axis moving module 201, a second Y-axis moving module 203, a second Z-axis moving module 202 and a second laser cutting head 204, wherein the second Z-axis moving module 202 is mounted on the second X-axis moving module 201, the second Y-axis moving module 203 is mounted on the second Z-axis moving module 202, the second laser cutting head 204 is mounted on the second Y-axis moving module 203, the second laser focusing mirror 24 and the fourth reflecting mirror 25 are arranged in the second laser cutting head 204, and the output end of the second laser cutting head 204 is vertically upward toward the ingot 4 to be processed on the processing seat 34. The second laser assembly 2 is also provided with a second CCD automatic focusing system 205 for automatic focusing according to visual technology.

[0056] In this way, the turntable 3 can be moved and positioned by the first Y-axis moving module 31, and the axis of rotation is deflected after positioning. During the processing, it only needs to rotate without linear movement, so as to avoid the linear movement affecting the coordination of the upper and lower laser beams 5. During the processing, the first laser cutting head 18 in the first laser assembly 1 can adjust the position of the focus and the center of the ingot 4 through the first X-axis moving module 16 to perform ring-by-ring processing, and adjust the depth position of the focus through the first Z-axis moving module 17 to perform stepping in the depth direction. During the processing, the second laser cutting head 204 in the second laser assembly 2 adjusts the position of the laser focus from the center of the ingot 4 through the second X-axis moving module 201 and the second Y-axis moving module 203 to achieve the purpose of ring-by-ring processing, and adjusts the depth position of the focus through the second Z-axis moving module 202 to perform stepping in the depth direction; at the same time, the cooperation of the second X-axis moving module 201, the second Y-axis moving module 203 and the second Z-axis moving module 202 can also provide space for the movement and positioning of the turntable 3, which is beneficial to the spatial layout of the equipment. Therefore, the arrangement and mutual cooperation of the motion modules in the above-mentioned turntable 3, the first laser assembly 1 and the second laser assembly 2 can achieve the purpose of simultaneous processing of the workpiece in both upper and lower directions.

[0057] In order to accurately position the ingot 4 to be processed in the processing area, Figure 8 , Fig.12The present invention is further provided with a positioning assembly 6, which includes a support column 61, a third Z-axis moving module 62 and an annular positioning lamp 63. The third Z-axis moving module 62 is installed on the support column 61, and a plurality of concentric annular positioning lamps 63 are installed on the third Z-axis moving module 62. The positioning area is arranged on the moving path of the first Y-axis moving module 31 and is located directly below the annular positioning lamp 63. The annular positioning lamp 63 projects a positioning ring 64 on the positioning area for positioning the vacuum suction cup and the ingot 4 to be processed, respectively. The third Z-axis moving module 62 drives the annular positioning lamp 63 to move up and down along the support column 61, as shown in FIG. Fig.13 , positioning rings 64 with the same center but different diameters can be projected, corresponding to the sizes of 4, 6, 8, 10, and 12 inches of conventional ingots 4, to adapt to the processing of ingots 4 with different diameters, and can be changed at will according to the size of the ingot 4. The second Z-axis moving module 202 can be in manual moving mode, and the height of the annular positioning lamp 63 can be manually adjusted by turning the hand wheel. Driven by the first Y-axis moving module 31, the processing seat 34 positions the center of the vacuum suction cup and the ingot 4 to be processed to the center of the corresponding positioning ring 64.

[0058] In order to integrate the advantages of multi-band lasers, as one of the implementation methods, Fig.14 The first laser assembly 1 also includes a third laser 14 and a fifth reflector 15, wherein the first laser 11 is used to emit a first wavelength laser, the first reflector 12 is used to reflect the first wavelength laser emitted by the first laser 11, the third laser 14 is used to emit a second wavelength laser, and the fifth reflector 15 is used to reflect the second wavelength laser emitted by the third laser 14; the first laser 11 and the third laser 14 are both located above the turntable 3, and the first reflector 12 and the fifth reflector 15 are located above the turntable 3. The first reflector 12 is arranged parallel to the fifth reflector 15, the first reflector 12 is located above the fifth reflector 15, the first reflector 12 is a full reflector, and the fifth reflector 15 is a coated semi-transparent semi-reflector, which reflects the second wavelength laser while allowing the first wavelength laser to pass through. The first wavelength laser emitted by the first laser 11 is reflected by the first reflector 12, and then passes through the fifth reflector 15, and is output in the same optical path as the second wavelength laser emitted by the third laser 14 and reflected by the fifth reflector 15, and converges to the first laser focusing mirror 13 for focusing, and then vertically downward reaches the ingot 4 to be processed on the turntable 3. The vertically downward laser beam 5 can combine the advantages of the first wavelength laser and the second wavelength laser, such as increasing the laser intensity, thereby improving the laser processing efficiency.

[0059] The first wavelength laser and the second wavelength laser can be set according to actual needs. For example, the first wavelength laser can be infrared light, and the first laser 11 corresponds to an infrared fiber laser. The second wavelength laser can be green light, and the second laser 21 corresponds to a green light laser. According to actual conditions, more lasers of other wavelengths, such as blue light, can be coupled in the same way to output multi-band composite lasers. The lasers of each wavelength laser are independently set, and the parameters of each wavelength laser can be adjusted independently to meet various processing needs.

[0060] Specifically, in this embodiment, the first reflector 12 and the fifth reflector 15 are arranged in parallel up and down, and are both inclined at 45 degrees. The first laser 11 and the third laser 14 both emit horizontal laser beams 5. The first reflector 12 is located above the fifth reflector 15. The first reflector 12 is a total reflector, and the fifth reflector 15 is a coated semi-transparent and semi-reflective mirror, which reflects the second wavelength laser while allowing the first wavelength laser to pass through. Specifically, referring to the prior art, a first wavelength laser anti-reflection film is coated on a side of the fifth reflector 15 facing the first reflector 12. If the first wavelength laser is infrared light, it is an infrared anti-reflection film. The second wavelength laser high-reflection film is coated on a side of the fifth reflector 15 facing the third laser 14. If the second wavelength laser is blue light, it is a blue light high-reflection film.

[0061] To improve the performance of the upward laser, similar to the first laser assembly 1, as one embodiment, the second laser assembly 2 further includes a fourth laser 26 and a sixth reflector 27, the second laser 21 is used to emit a third wavelength laser, the second reflector 22 is used to reflect the third wavelength laser emitted by the second laser 21, the fourth laser 26 is used to emit a fourth wavelength laser, and the sixth reflector 27 is used to reflect the fourth wavelength laser emitted by the fourth laser 26; the second laser 21 and the fourth laser 26 are both located above the turntable 3, and the second reflector 22 and the sixth reflector 27 are located above the turntable 3. The second reflector 22 is arranged parallel to the sixth reflector 27, the second reflector 22 is located above the sixth reflector 27, the second reflector 22 is a full reflector, and the sixth reflector 27 is a coated semi-transparent semi-reflector, which reflects the fourth wavelength laser while allowing the third wavelength laser to pass through. The third wavelength laser emitted by the second laser 21 is reflected by the second reflector 22, and then passes through the sixth reflector 27, and is output in the same optical path as the fourth wavelength laser emitted by the fourth laser 26 and reflected by the sixth reflector 27, and then passes through the second reflector 22, the third reflector 23, the second laser focusing mirror 24, and the fourth reflector 25 in sequence, and then vertically reaches the ingot 4 to be processed on the turntable 3. The specific implementation method can refer to the first laser assembly 1, which is not repeated here.

[0062] A bidirectional laser silicon carbide ingot processing method, using the bidirectional laser silicon carbide ingot processing device, such as Fig.19 , including the following steps:

[0063] S1. Parameters are set on the control system, including the diameter and thickness of the final ingot product, the cutting depth ratio of the first laser assembly 1 and the second laser assembly 2, the parameters of the V-shaped cutting groove, the laser parameters and the rotation speed n of the C-axis module 33. The control system calculates the deflection angle α of the B-axis module 33 according to the set parameters, and automatically plans the laser cutting path for the layered processing of the first laser assembly 1 and the second laser assembly 2 (such as Fig.15 , Fig.16 ), calculate the processing time.

[0064] The parameters of the V-shaped cutting groove include the maximum width L of the V-shaped cutting groove 43, the angle β between the two sides of the V-shaped cutting groove 43 and the laser depth step H, wherein the laser depth step H is the distance between two adjacent layers in layered processing, and the laser parameters include laser power, laser frequency, pulse width and duty cycle; the deflection angle α=θ / 2, wherein θ is the cone angle of the conical laser beam 5, D is the diameter of the beam incident on the first laser focusing mirror 13, W D is the distance between the first laser focusing mirror 13 and the laser focus;

[0065] As one of the implementation methods, Fig.16 , Fig.17 In the laser cutting path of the layered processing of the first laser component 1 and the second laser component 2, the width of each layer on the laser cutting path corresponding to the first laser component 1 gradually narrows from top to bottom, and the width of each layer on the laser cutting path corresponding to the second laser component 2 gradually narrows from bottom to top, and finally forms the V-shaped cutting groove on the vertical section. In order to make the width of the V-shaped cutting groove 43 as narrow as possible and to make the material removed by cutting as little as possible to improve the utilization rate of the raw materials, the angle β of the two sides of the V-shaped cutting groove 43 is made to be equal to θ, where θ is the cone angle of the conical laser beam 5. Wherein, D is the diameter of the beam incident on the first laser focusing mirror 13, W D is the distance between the first laser focusing mirror 13 and its laser focus; when processing each layer, a path of processing from inside to outside or from outside to inside is adopted, which is processed ring by ring.

[0066] The parameters of the laser cutting path include the processing width L of each layer n , laser width step amount M, laser moving speed V, the processing width L of each layer is the processing width of each layer during layered processing, the laser width step amount M is the step amount between two adjacent rings when the laser processes one ring at a time on each layer, and the laser moving speed V is the cutting linear speed when the laser processes one ring at a time, V=πr·n / 30, mm / s, wherein r is the rotation radius at the cutting point, mm; π is a constant of 3.14, dimensionless; and n is the rotation speed of the C-axis, revolutions / min.

[0067] S2, move and position the ingot 4 to be processed to the processing area, and then control the B-axis module 32 according to the deflection angle α to make the ingot 4 to be processed swing in the vertical direction, such as Fig.16 , so that the included angle between its vertical center axis 41 and the vertical direction is α; then control the first laser assembly 1 and the second laser assembly 2 to make the diameters of the beams incident on the first laser focusing mirror 13 and the second laser focusing mirror 24 equal, and the optical parameters of the first laser focusing mirror 13 and the second laser focusing mirror 24 are also the same, that is, the shapes of the conical laser beams 5 output by the first laser assembly 1 and the second laser assembly 2 are exactly the same, so as to ensure that the processed side surfaces 42 are perpendicular to the bottom surface; then use the CCD automatic focusing system to focus the lasers output by the first laser assembly and the second laser assembly onto the upper and lower surfaces of the ingot to be processed, and cut the side surfaces of the ingot according to the planned laser cutting path;

[0068] Specifically, Figure 8 , Fig.12 The method for moving and positioning the ingot to be processed to the processing area is as follows: a first Y-axis moving module 31 is arranged on the turntable 3, and the B-axis module 32 is installed on the first Y-axis moving module 31; a plurality of concentric annular positioning lamps 63 that can be lifted and lowered are arranged above the positioning area, a vacuum suction cup 35 is arranged on the top of the processing seat 34, and the center of the vacuum suction cup 35 is located on the rotating shaft of the processing seat 34; the height of the annular positioning lamp 63 is adjusted according to the size of the ingot 4 to be processed, and the corresponding concentric vacuum suction cups 35 and The positioning ring 64 corresponds to the size of the crystal ingot. First, the vacuum suction cup 35 is moved to the corresponding positioning ring 64 by controlling the linear motion module, so that the center of the vacuum suction cup 35 is aligned with the center of gravity of the positioning ring 34 corresponding to the vacuum suction cup. Then, the crystal ingot 4 to be processed is placed on the vacuum suction cup 35, and the center of the crystal ingot 4 to be processed coincides with the center of gravity of the positioning ring 64 corresponding to the crystal ingot. Then, the crystal ingot 4 to be processed is fixed by vacuum adsorption. Then, the first Y-axis motion module 31 is controlled to move the crystal ingot to be processed to the processing area at the first laser assembly 1 and the second laser assembly 2.

[0069] The cutting depth ratio of the first laser component 1 and the second laser component 2 can be set to 1:1, and the parameters of the two laser components can be controlled to be consistent. The linear motion modules and the rotation modules are coordinated to make the two laser components process synchronously, thereby ensuring the smooth and stable operation of the bidirectional laser processing.

[0070] S3. After the side 42 of the ingot 4 is cut, the control system controls the B-axis module 32 to swing the ingot 4 in the vertical direction, so that its vertical center axis 41 returns to the vertical direction, and the lasers output by the first laser assembly 1 and the second laser assembly 2 are focused on the upper and lower surfaces of the ingot 4 respectively, and the upper and lower surfaces of the ingot 4 are processed according to the planned laser processing path in coordination with the movement of the linear moving module and the C-axis module 33. Conventional methods can be used to process the upper and lower surfaces of the ingot 4, such as grinding and polishing the surface of the ingot 4 in a circular outward or inward manner.

[0071] The above detailed description is a specific description of a feasible embodiment of the present invention. The embodiment is not intended to limit the patent scope of the present invention. Any equivalent implementation or modification that does not deviate from the present invention should be included in the patent scope of this case.

Claims

1. A bidirectional laser silicon carbide ingot processing device, characterized in that: The invention comprises a first laser assembly, a second laser assembly and a turntable; the turntable is used to carry and rotate the ingot to be processed; the first laser assembly comprises a first laser, a first reflector and a first laser focusing mirror; the laser light emitted by the first laser is reflected by the first reflector and focused by the first laser focusing mirror in turn, and then the ingot to be processed on the turntable is processed vertically downward from top to bottom; the second laser assembly comprises a second laser, a second reflector, a third reflector, a fourth reflector and a second laser focusing mirror; the laser light emitted by the second laser is reflected by the second reflector and the third reflector in turn, focused by the second laser focusing mirror and reflected by the fourth reflector in turn, and then the ingot to be processed on the turntable is processed vertically upward from bottom to top; The turntable includes a C-axis module, a B-axis module and a processing seat, the C-axis module is arranged on the B-axis module, the processing seat is installed on the C-axis module, the ingot to be processed is fixed on the processing seat, the C-axis module is used to drive the ingot to be processed to rotate around its vertical center axis, and the B-axis module is used to drive the ingot to be processed to swing in a vertical plane, so that the vertical center axis of the ingot to be processed is tilted relative to the vertical direction, so as to eliminate the cutting effect of the conical laser beam on the side of the ingot, thereby processing a cylindrical ingot with the side surface and the bottom surface completely perpendicular.

2. A bidirectional laser silicon carbide ingot processing device according to claim 1, characterized in that: The turntable further comprises a first Y-axis moving module, and the B-axis module is mounted on the first Y-axis moving module; The first laser assembly further includes a first X-axis moving module, a first Z-axis moving module and a first laser cutting head, wherein the first Z-axis moving module is mounted on the first X-axis moving module, the first laser cutting head is mounted on the first Z-axis moving module, the first laser focusing mirror is arranged in the first laser cutting head, the output end of the first laser cutting head is vertically downward, and under the drive of the first X-axis moving module and the first Z-axis moving module, the focus of the output laser beam is focused downward onto the ingot to be processed on the processing seat; The second laser assembly also includes a second X-axis moving module, a second Y-axis moving module, a second Z-axis moving module and a second laser cutting head. The second Z-axis moving module is installed on the second X-axis moving module, the second Y-axis moving module is installed on the second Z-axis moving module, and the second laser cutting head is installed on the second Y-axis moving module. The second laser focusing mirror and the fourth reflecting mirror are arranged in the second laser cutting head. The output end of the second laser cutting head is vertically upward, and under the drive of the second X-axis moving module, the second Y-axis moving module and the second Z-axis moving module, the focus of the output laser beam is focused upward onto the ingot to be processed on the processing seat.

3. A bidirectional laser silicon carbide ingot processing device according to claim 2, characterized in that: It also includes a positioning component, which includes a support column, a third Z-axis moving module and an annular positioning light. The third Z-axis moving module is installed on the support column, and several concentric annular positioning lights are installed on the third Z-axis moving module. The positioning area is arranged on the moving path of the first Y-axis moving module and is located directly below the annular positioning light. A circular vacuum suction cup is arranged on the top of the processing seat for fixing the crystal ingot to be processed by vacuum adsorption. The annular positioning light projects positioning rings for positioning the vacuum suction cup and the crystal ingot to be processed on the positioning area respectively. The third Z-axis moving module drives the annular positioning light to move up and down along the support column to project concentric positioning rings but with different diameters to adapt to the processing of crystal ingots with different diameters. Driven by the first Y-axis moving module, the processing seat positions the center of the vacuum suction cup and the crystal ingot to be processed to the center of the corresponding positioning ring.

4. The bidirectional laser silicon carbide ingot processing device according to claim 1, characterized in that: The first laser assembly also includes a third laser and a fifth reflector, the first laser is used to emit a first wavelength laser, the first reflector is used to reflect the first wavelength laser emitted by the first laser, the third laser is used to emit a second wavelength laser, and the fifth reflector is used to reflect the second wavelength laser emitted by the third laser; the first laser and the third laser are both located above the turntable, the first reflector and the fifth reflector are arranged in parallel up and down, the first reflector is located above the fifth reflector, the first reflector is a total reflector, and the fifth reflector is a coated semi-transparent semi-reflective mirror, which reflects the second wavelength laser while allowing the first wavelength laser to pass through, the first wavelength laser emitted by the first laser is reflected by the first reflector, and then passes through the fifth reflector, and is output in the same optical path as the second wavelength laser emitted by the third laser and reflected by the fifth reflector, and is focused on the first laser focusing mirror, and then vertically downward to reach the ingot to be processed on the turntable.

5. The bidirectional laser silicon carbide ingot processing device according to claim 1, characterized in that: The second laser assembly also includes a fourth laser and a sixth reflector, the second laser is used to emit a third wavelength laser, the second reflector is used to reflect the third wavelength laser emitted by the second laser, the fourth laser is used to emit a fourth wavelength laser, and the sixth reflector is used to reflect the fourth wavelength laser emitted by the fourth laser; the second laser and the fourth laser are both located above the turntable, the second reflector and the sixth reflector are arranged in parallel up and down, the second reflector is located above the sixth reflector, the second reflector is a total reflector, and the sixth reflector is a coated semi-transparent and semi-reflective mirror, which reflects the fourth wavelength laser while allowing the third wavelength laser to pass through, the third wavelength laser emitted by the second laser is reflected by the second reflector, and then passes through the sixth reflector, and is output in the same optical path as the fourth wavelength laser emitted by the fourth laser and reflected by the sixth reflector, and then passes through the second reflector, the third reflector, the second laser focusing mirror, and the fourth reflector in sequence, and then vertically reaches the ingot to be processed on the turntable.

6. The bidirectional laser silicon carbide ingot processing device according to claim 1, characterized in that: The B-axis module includes a swing motor, a swing plate and a swing arm, one end of the swing plate is vertically connected to the output shaft of the swing motor, and the other end is vertically connected to the swing arm; the C-axis module includes a rotating motor, which is installed on the swing arm, the processing seat is drive-connected to the rotating motor, and the rotating axis of the processing seat is perpendicular to the rotating axis of the swing motor.

7. The bidirectional laser silicon carbide ingot processing device according to claim 1, characterized in that: The B-axis module is used to drive the ingot to be processed to swing in a vertical plane, so that the vertical center axis of the ingot to be processed deflects an angle α relative to the vertical direction, α=θ / 2, where θ is the cone angle of the conical laser beam. D is the diameter of the beam incident on the first laser focusing mirror, W D is the distance between the first laser focusing mirror and its laser focus.

8. A bidirectional laser silicon carbide ingot processing method, using the bidirectional laser silicon carbide ingot processing device according to any one of claims 1 to 7, characterized in that: The steps include: S1. Setting parameters on the control system, including the diameter and thickness of the final ingot product, the depth ratio of the first laser component and the second laser component, the parameters of the V-shaped cutting groove, the laser parameters and the speed n of the C-axis module. The control system calculates the deflection angle α of the B-axis module according to the set parameters, automatically plans the laser cutting path for the layered processing of the first laser component and the second laser component, and calculates the processing time; The parameters of the V-shaped cutting groove include the maximum width L of the V-shaped cutting groove, the angle β of the two sides of the V-shaped cutting groove and the laser depth step H, wherein the laser depth step H is the distance between two adjacent layers in layered processing, and the laser parameters include laser power, laser frequency, pulse width and duty cycle; the deflection angle α=θ / 2, wherein θ is the cone angle of the conical laser beam, D is the diameter of the beam incident on the first laser focusing mirror, W D is the distance between the first laser focusing mirror and its laser focus; S2, move and position the crystal ingot to be processed to the processing area, and then control the B-axis module according to the deflection angle α to make the crystal ingot to be processed swing in the vertical direction, so that the angle between its vertical center axis and the vertical direction is α; then control the first laser assembly and the second laser assembly to make the diameters of the light beams incident on the first laser focusing mirror and the second laser focusing mirror equal, and the optical parameters of the first laser focusing mirror and the second laser focusing mirror are also the same; then use the CCD automatic focusing system to focus the lasers output by the first laser assembly and the second laser assembly on the upper and lower surfaces of the crystal ingot to be processed, and cut the side of the crystal ingot according to the planned laser cutting path; S3. After the side cutting of the crystal ingot is completed, the control system controls the B-axis module to swing the crystal ingot in the vertical direction, so that its vertical center axis returns to the vertical direction, and focuses the lasers output by the first laser assembly and the second laser assembly onto the upper and lower surfaces of the crystal ingot respectively, and cooperates with the movement of the linear motion module and the C-axis module to process the upper and lower surfaces of the crystal ingot according to the planned laser processing path.

9. A bidirectional laser silicon carbide ingot processing method according to claim 8, characterized in that: In the laser cutting path of the layered processing of the first laser component and the second laser component in step S1, the width of each layer on the laser cutting path corresponding to the first laser component gradually narrows from top to bottom, and the width of each layer on the laser cutting path corresponding to the second laser component gradually narrows from bottom to top, and finally forms the V-shaped cutting groove on the vertical section, and the angle β between the two sides of the V-shaped cutting groove is θ, where θ is the cone angle of the conical laser beam. Where D is the diameter of the beam incident on the first laser focusing mirror, W D is the distance between the first laser focusing mirror and the laser focus; when processing each layer, a path is adopted to process from the inside to the outside or from the outside to the inside, one ring at a time; The parameters of the laser cutting path include the processing width L of each layer n , laser width step amount M, laser moving speed V, the processing width L of each layer is the processing width of each layer during layered processing, the laser width step amount M is the step amount between two adjacent rings when the laser processes one ring at a time on each layer, and the laser moving speed V is the cutting linear speed when the laser processes one ring at a time, V=πr·n / 30, mm / s, wherein r is the rotation radius at the cutting point, mm; π is a constant of 3.14, dimensionless; and n is the rotation speed of the C-axis, revolutions / min.

10. The bidirectional laser silicon carbide ingot processing method according to claim 8, characterized in that: In step S2, the method for moving and positioning the ingot to be processed to the processing area is as follows: a first Y-axis moving module is arranged on the turntable, and the B-axis module is installed on the first Y-axis moving module; a plurality of concentric annular positioning lamps that can be raised and lowered are arranged above the positioning area, a vacuum suction cup is arranged on the top of the processing seat, and the center of the vacuum suction cup is located on the rotating shaft of the processing seat; the height of the annular positioning lamp is adjusted according to the size of the ingot to be processed, and the corresponding concentric vacuum suction cups and positioning rings corresponding to the size of the ingot are projected in the positioning area respectively, and the vacuum suction cups are first moved to the corresponding positioning rings by controlling the linear moving module, so that the center of the vacuum suction cups is aligned with the center of gravity of the positioning ring corresponding to the vacuum suction cups, and then the ingot to be processed is placed on the vacuum suction cups, and the center of the ingot to be processed coincides with the center of the positioning ring corresponding to the ingot, and then the ingot to be processed is fixed by vacuum adsorption, and then the first Y-axis moving module is controlled to move the ingot to be processed to the processing area at the first laser assembly and the second laser assembly.

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