A bidirectional laser silicon carbide ingot processing device and processing method

Abstract

A bidirectional laser silicon carbide ingot processing apparatus and method includes a first laser assembly, a second laser assembly, and a turntable. In the first laser assembly, the laser emitted by the first laser passes sequentially through a first reflecting mirror and a first laser focusing mirror before vertically downwards onto the turntable. In the second laser assembly, the laser emitted by the second laser passes sequentially through a second reflecting mirror, a third reflecting mirror, a second laser focusing mirror, and a fourth reflecting mirror before vertically upwards onto the turntable. The turntable includes a C-axis module, a B-axis module, and a processing base. The C-axis module drives the ingot to be processed to rotate, and the B-axis module drives the ingot to oscillate in a vertical plane. A corresponding linear motion module is also configured. This invention can effectively improve the efficiency of laser processing, produce cylindrical ingots, maximize the use of raw materials, reduce costs, and has a simple structure that is easy to control. It is suitable for cutting silicon carbide ingots with large thickness, high hardness, high cost, and high precision.

Description

Technical Field

[0001] This invention relates to the field of laser processing technology, and in particular to a bidirectional laser silicon carbide ingot processing apparatus and processing method. Background Technology

[0002] Laser processing utilizes the energy of light, which is focused by a lens to achieve a very high energy density at the focal point. It relies on the photothermal effect to process materials. By using the high energy and high focusing properties of the laser beam, the surface of the workpiece is heated, melted, evaporated, or burned to achieve operations such as cutting, engraving, welding, drilling, surface modification, and grinding. It has the advantages of fast processing speed, small surface deformation, and the ability to process various materials, and is therefore widely used in various industrial manufacturing fields.

[0003] In existing laser processing technologies, most methods only use a single direction, such as cutting from top to bottom. When processing the side or bottom of the workpiece is required, the current laser processing must be stopped and the workpiece must be flipped before laser processing can resume. Or, when deep cutting is required, due to the large cutting depth, single-sided processing takes a lot of time, the width of the cutting groove will also increase accordingly, more material needs to be cut and removed, more energy is consumed, and the efficiency of laser processing is also affected.

[0004] Existing methods that use only single-wavelength lasers to process workpieces are insufficient to meet the increasingly stringent requirements for workpiece processing efficiency and quality. Instead, there is a growing trend towards using dual-wavelength or multi-band lasers to process workpieces. However, existing dual-wavelength or multi-band laser processing technologies are still immature and there are still some problems that are not conducive to meeting complex processing needs.

[0005] Meanwhile, in existing laser processing technologies, conventional laser processing, due to the conical laser beam, makes it difficult to achieve taper-free cutting, such as... Figure 1 As shown, this results in non-perpendicular inner walls or cut edges after laser processing, forming bevels and making it difficult to obtain a cylindrical shape with perfectly perpendicular sides and bottom surfaces, instead forming a frustum. Although laser micro-water jet technology can solve this problem and obtain high-quality processed walls and cut edges, its equipment is expensive, and the high power density laser in the water jet will suffer significant energy loss due to continuous reflection and absorption, limiting its application in high-power applications and slowing down the cutting speed. During processing, the high energy density of the laser and the rapid heating and cooling process may cause micro-cracks to form inside the material, affecting the quality and strength of the processed parts, especially precision workpieces such as semiconductor silicon wafers, directly impacting the quality of the finished product. Furthermore, current water-guided laser processing technology suffers from limitations in water jet stability, effective length, and laser spot size control, making it difficult to further improve its cutting accuracy and resulting in poor adaptability to different materials and thicknesses.

[0006] Therefore, new solutions are needed for processing materials such as silicon carbide ingots, which are thick, hard, expensive, and require high precision. Summary of the Invention

[0007] The purpose of this invention is to overcome the shortcomings of the prior art and provide a bidirectional laser silicon carbide ingot processing device with high processing efficiency, good quality, material saving, simple structure, easy control, and low cost, as well as a processing method using this device, which is suitable for processing silicon carbide ingots with large thickness, high hardness, high precision, and high price.

[0008] This invention is achieved through the following technical solution:

[0009] A bidirectional laser silicon carbide ingot processing apparatus includes a first laser component, a second laser component, and a turntable. The turntable is used to support and rotate the ingot to be processed. The first laser component includes a first laser, a first reflector, and a first laser focusing lens. The laser emitted by the first laser is reflected by the first reflector and focused by the first laser focusing lens, and then processes the ingot on the turntable vertically downwards from top to bottom. The second laser component includes a second laser, a second reflector, a third reflector, a fourth reflector, and a second laser focusing lens. The laser emitted by the second laser is reflected by the second and third reflectors, focused by the second laser focusing lens, and reflected by the fourth reflector, and then processes the ingot on the turntable vertically upwards from bottom to top. The first and second laser components together complete the cutting of the entire depth of the ingot.

[0010] The turntable includes a C-axis module, a B-axis module, and a machining base. The C-axis module is mounted on the B-axis module, and the machining base is mounted on the C-axis module. The ingot to be processed is fixed on the machining base. The C-axis module is used to drive the ingot to be processed to rotate around its vertical central axis. The B-axis module is used to drive the ingot to be processed to swing in the vertical plane, so that the vertical central axis of the ingot is tilted relative to the vertical direction to eliminate the cutting effect of the conical laser beam on the side of the ingot, thereby processing a cylindrical ingot with the side and bottom surfaces completely perpendicular.

[0011] Furthermore, the turntable also includes a first Y-axis moving module, and the B-axis module is mounted on the first Y-axis moving module;

[0012] The first laser assembly further includes a first X-axis moving module, a first Z-axis moving module, and a first laser cutting head. The first Z-axis moving module is mounted on the first X-axis moving module, the first laser cutting head is mounted on the first Z-axis moving module, the first laser focusing lens is disposed inside the first laser cutting head, and the output end of the first laser cutting head is vertically downward toward the ingot to be processed on the processing seat.

[0013] The second laser assembly further includes a second X-axis moving module, a second Y-axis moving module, a second Z-axis moving module, and a second laser cutting head. The second Z-axis moving module is mounted on the second X-axis moving module, the second Y-axis moving module is mounted on the second Z-axis moving module, and the second laser cutting head is mounted on the second Y-axis moving module. The second laser focusing lens and the fourth reflecting mirror are disposed inside the second laser cutting head, and the output end of the second laser cutting head is vertically upward toward the ingot to be processed on the processing seat.

[0014] Furthermore, it also includes a positioning component, which includes a support column, a third Z-axis moving module, and an annular positioning light. The third Z-axis moving module is mounted on the support column, and several concentric annular positioning lights are mounted on the third Z-axis moving module. The positioning area is located on the moving path of the first Y-axis moving module and directly below the annular positioning lights. A circular vacuum chuck is provided on the top of the processing base, and the vacuum chuck is connected to a vacuum generating device for fixing the ingot to be processed by vacuum adsorption. The annular positioning lights project positioning rings on the positioning area for positioning the vacuum chuck and the ingot to be processed, respectively. The third Z-axis moving module drives the annular positioning lights to move up and down along the support column to project positioning rings with the same center but different diameters to accommodate ingots of different diameters. Under the drive of the first Y-axis moving module, the processing base positions the centers of the vacuum chuck and the ingot to be processed to the centers of the corresponding positioning rings, respectively.

[0015] Furthermore, the first laser assembly also includes a third laser and a fifth reflector. The first laser is used to emit a first wavelength laser, the first reflector is used to reflect the first wavelength laser emitted by the first laser, the third laser is used to emit a second wavelength laser, and the fifth reflector is used to reflect the second wavelength laser emitted by the third laser. The first laser and the third laser are both located above the turntable. The first reflector and the fifth reflector are arranged vertically parallel to each other, with the first reflector located above the fifth reflector. The first reflector is a total reflection mirror, and the fifth reflector is a coated semi-transparent and semi-reflective mirror that reflects the second wavelength laser while allowing the first wavelength laser to pass through. The first wavelength laser emitted by the first laser is reflected by the first reflector and then passes through the fifth reflector, sharing the same optical path with the second wavelength laser emitted by the third laser and reflected by the fifth reflector. The laser beams converge on the first laser focusing mirror and then vertically downwards to the ingot to be processed on the turntable.

[0016] Furthermore, the second laser assembly also includes a fourth laser and a sixth reflector. The second laser is used to emit a third wavelength laser, and the second reflector is used to reflect the third wavelength laser emitted by the second laser. The fourth laser is used to emit a fourth wavelength laser, and the sixth reflector is used to reflect the fourth wavelength laser emitted by the fourth laser. The second laser and the fourth laser are both located above the turntable. The second reflector and the sixth reflector are arranged vertically parallel to each other, with the second reflector located above the sixth reflector. The second reflector is a total reflection mirror, and the sixth reflector is a coated semi-transparent and semi-reflective mirror that reflects the fourth wavelength laser while allowing the third wavelength laser to pass through. The third wavelength laser emitted by the second laser is reflected by the second reflector and then passes through the sixth reflector, sharing the same optical path with the fourth wavelength laser emitted by the fourth laser and reflected by the sixth reflector. After passing through the second reflector, the third reflector, the second laser focusing mirror, and the fourth reflector in sequence, the laser reaches the ingot to be processed on the turntable vertically upward.

[0017] Furthermore, the B-axis module includes a swing motor, a swing plate, and a swing arm. One end of the swing plate is perpendicularly connected to the output shaft of the swing motor, and the other end is perpendicularly connected to the swing arm. The C-axis module includes a rotary motor, which is mounted on the swing arm. The machining seat is driven and connected to the rotary motor, and the rotation axis of the machining seat is perpendicular to the rotation axis of the swing motor.

[0018] Furthermore, the B-axis module is used to drive the ingot to be processed to swing in the vertical plane, causing the vertical central axis of the ingot to be processed to deflect relative to the vertical direction by an angle α, α = θ / 2, where θ is the cone angle of the conical laser beam. D is the diameter of the beam incident on the first laser focusing mirror, W D The distance between the first laser focusing lens and its laser focal point is denoted as .

[0019] A method for processing silicon carbide ingots using bidirectional laser technology, employing the aforementioned bidirectional laser silicon carbide ingot processing apparatus, includes the following steps:

[0020] S1. Set parameters on the control system. The parameters set include the diameter and thickness of the final ingot, the cutting depth ratio of the first laser component and the second laser component, the parameters of the V-shaped cutting groove, the laser parameters, and the rotational speed n of the C-axis module. The control system calculates the deflection angle α of the B-axis module based on the set parameters, automatically plans the laser cutting path for the layered processing of the first laser component and the second laser component, and calculates the processing time.

[0021] The parameters of the V-shaped cutting groove include the maximum width L of the V-shaped cutting groove, the included angle β between the two sides of the V-shaped cutting groove, and the laser depth step H. The laser depth step H is the distance between two adjacent layers during layer processing. The laser parameters include laser power, laser frequency, pulse width, and duty cycle. The deflection angle α = θ / 2, where θ is the cone angle of the conical laser beam. D is the diameter of the beam incident on the first laser focusing mirror, W D The distance between the first laser focusing lens and its laser focal point;

[0022] S2. Move and position the ingot to be processed to the processing area. Then, control the B-axis module according to the deflection angle α to make the ingot swing vertically so that the angle between its vertical central axis and the vertical direction is α. Then, control the first laser assembly and the second laser assembly to make the diameter of the beam incident on the first laser focusing lens and the second laser focusing lens equal, and the optical parameters of the first laser focusing lens and the second laser focusing lens are also the same. That is, the shape of the conical laser beam output by the first laser assembly and the second laser assembly is exactly the same, so as to ensure that the processed side is perpendicular to the bottom surface. Then, use the CCD automatic focusing system to focus the laser output by the first laser assembly and the second laser assembly onto the upper and lower surfaces of the ingot to be processed, and cut the side of the ingot according to the planned laser cutting path.

[0023] S3. After the side cutting of the crystal ingot is completed, the control system controls the B-axis module to swing the crystal ingot in the vertical direction, so that its vertical center axis returns to the vertical direction. The lasers output by the first laser component and the second laser component are focused on the upper and lower surfaces of the crystal ingot, respectively. With the movement of the linear motion module and the C-axis module, the upper and lower surfaces of the crystal ingot are processed according to the planned laser processing path.

[0024] Furthermore, in step S1, in the layered laser cutting path of the first laser component and the second laser component, the width of each layer on the laser cutting path corresponding to the first laser component gradually narrows from top to bottom, and the width of each layer on the laser cutting path corresponding to the second laser component gradually narrows from bottom to top, ultimately forming the V-shaped cutting groove on the vertical cross-section. The included angle β = θ between the two sides of the V-shaped cutting groove, where θ is the cone angle of the conical laser beam. Where D is the diameter of the beam incident on the first laser focusing mirror, and W D This refers to the distance between the first laser focusing lens and the laser focal point; during the processing of each layer, a ring-by-ring processing path is adopted, either from the inside out or from the outside in;

[0025] The parameters of the laser cutting path include the processing width L of each layer. nThe laser width step M and laser moving speed V are defined as follows: the processing width L of each layer is the processing width of each layer during layered processing; the laser width step M is the step size between two adjacent rings when the laser processes ring by ring on each layer; and the laser moving speed V is the linear velocity of the laser cutting ring by ring, V = πr·n / 30, mm / s, where r is the radius of rotation at the cutting point, mm; π is a constant 3.14, dimensionless; and n is the rotational speed of the C-axis, revolutions per minute.

[0026] Further, the method for moving and positioning the ingot to be processed to the processing area in step S2 is as follows: a first Y-axis moving module is set on the turntable, and the B-axis module is installed on the first Y-axis moving module; several concentric ring positioning lights that can be raised and lowered are set above the positioning area; a vacuum suction cup is set on the top of the processing seat, and the center of the vacuum suction cup is located on the rotating shaft of the processing seat; the height of the ring positioning lights is adjusted according to the size of the ingot to be processed, and the corresponding vacuum suction cups and positioning rings of the corresponding ingot size are projected into the positioning area respectively. First, the vacuum suction cups are moved to the corresponding positioning rings by controlling the linear moving module, so that the center of the vacuum suction cup is aligned with the center of the positioning ring corresponding to the vacuum suction cup. Then, the ingot to be processed is placed on the vacuum suction cup, and the center of the ingot to be processed coincides with the center of the positioning ring corresponding to the ingot. The ingot to be processed is then fixed by vacuum adsorption. Finally, the first Y-axis moving module is controlled to move the ingot to be processed to the processing area of ​​the first laser component and the second laser component.

[0027] Compared with existing technologies, the present invention has the following advantages: By setting the first laser component and the second laser component to simultaneously perform laser processing on the ingot from two opposite directions, the efficiency of laser processing can be effectively improved, avoiding the need for flipping the ingot. Compared with the unidirectional depth cutting scheme, less material is removed, maximizing the utilization of raw materials and reducing costs. It is suitable for processing high-priced, thick, and high-hardness silicon carbide ingots. By setting a B-axis module on the basis of a conventional processing platform, the processing platform is driven to swing in the vertical direction, so that the ingot to be processed is placed at an angle, with its central axis aligned with the conical laser... The beam's sides are parallel, ensuring the cut ingot's side surface is parallel to the central axis and perpendicular to the ingot's bottom surface, resulting in a cylindrical ingot. This overcomes the defect of conventional laser cutting where the tapered edge of the conical laser beam causes the cut side surface to tilt. Furthermore, compared to water-guided laser technology, which suffers from high equipment costs, high laser energy loss, slow cutting speed, susceptibility to micro-cracks in precision materials, poor stability, and difficulty in control, this method offers numerous advantages, including simple structure, ease of operation and control, and low cost. It is particularly suitable for cutting thick, hard, and high-precision silicon carbide ingots. For silicon carbide ingot materials, for... The cutting of the ingot side adopts a layered, step-by-step processing method, with the width gradually narrowing from top to bottom, ultimately forming a V-shaped processing groove in the vertical cross-section. This maximizes the saving of material to be cut and removed, while also improving processing efficiency. It is suitable for processing high-priced, thick, and high-hardness silicon carbide ingots. By setting two sets of lasers on the first and second laser components respectively to emit two sets of laser beams of different wavelengths, and coupling the two sets of lasers of different wavelengths through a semi-transparent and semi-reflective mirror, a dual-wavelength laser beam is obtained. This allows the laser beam to combine the advantages of two or even more wavelengths of laser light, improving the intensity of the laser output. This technology improves laser processing efficiency, making it particularly suitable for laser cutting of thick and hard materials such as silicon carbide ingots. The design of the first and second laser components, along with the linear motion modules and rotation / oscillation modules on the turntable, allows the first and second laser components to work in tandem with the turntable, simultaneously processing the ingot on the turntable, with easy control over the process. By incorporating a liftable and movable ring-shaped positioning light, positioning rings of different diameters can be obtained. Combined with the linear motion modules on the turntable, this enables automated positioning and movement of the workpiece, further enhancing the efficiency and precision of laser processing. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of an embodiment of the present invention.

[0029] Figure 2 This is a schematic diagram of the optical path according to an embodiment of the present invention.

[0030] Figure 3 This is a schematic diagram illustrating the principle of the prior art in the background of this invention.

[0031] Figure 4 This is a schematic diagram illustrating the processing of an embodiment of the present invention.

[0032] Figure 5 This is a schematic diagram illustrating the principle of a prior art comparative example in an embodiment of the present invention.

[0033] Figure 6 This is a schematic diagram illustrating the principle of an embodiment of the present invention.

[0034] Figure 7 This is an enlarged schematic diagram of a portion of the structure of the turntable and the second laser assembly in an embodiment of the present invention.

[0035] Figure 8 This is a schematic diagram of the positioning component in an embodiment of the present invention.

[0036] Figure 9 This is a schematic diagram of the turntable structure in an embodiment of the present invention.

[0037] Figure 10 This is a schematic diagram of another embodiment of the turntable in this invention.

[0038] Figure 11 This is a schematic diagram of the side structure of the turntable in an embodiment of the present invention.

[0039] Figure 12 This is a schematic diagram of workpiece positioning in an embodiment of the present invention.

[0040] Figure 13 This is a schematic diagram of the positioning ring in an embodiment of the present invention.

[0041] Figure 14 This is another embodiment of the optical path principle of the present invention.

[0042] Figure 15 This is a schematic diagram of the path for cutting the side of the crystal ingot in an embodiment of the present invention.

[0043] Figure 16 This is a schematic diagram of the layered processing during the side cutting of the crystal ingot in an embodiment of the present invention.

[0044] Figure 17 This is a schematic diagram of the path in the depth direction when the side of the crystal ingot is cut in an embodiment of the present invention.

[0045] Figure 18 This is a schematic diagram of the path in the width direction when the side of the crystal ingot is cut in an embodiment of the present invention.

[0046] Figure 19 This is a flowchart illustrating the processing method of an embodiment of the present invention.

[0047] Reference numerals: 1-First laser assembly; 2-Second laser assembly; 3-Turntable; 4-Ingot; 5-Laser beam; 6-Positioning assembly; 11-First laser; 12-First reflector; 13-First laser focusing lens; 14-Third laser; 15-Fifth reflector; 16-First X-axis moving module; 17-First Z-axis moving module; 18-First laser cutting head; 19-First CCD autofocusing system; 21-Second laser; 22-Second reflector; 23-Third reflector; 24-Second laser focusing lens; 25-Fourth reflector; 26-Fourth laser; 27-Sixth reflector Mirror; 201-Second X-axis moving module; 202-Second Z-axis moving module; 203-Second Y-axis moving module; 204-Second laser cutting head; 205-Second CCD automatic focusing system; 31-First Y-axis moving module; 32-B-axis module; 33-C-axis module; 34-Processing base; 35-Vacuum chuck; 321-Oscillating motor; 322-Oscillating plate; 323-Swing arm; 331-Rotating motor; 61-Support column; 62-Third Z-axis moving module; 63-Annular positioning light; 64-Positioning ring; 41-Vertical central axis; 42-Side; 43-V-shaped cutting groove. Detailed Implementation

[0048] A bidirectional laser silicon carbide ingot processing device, such as Figure 1 , Figure 2 As shown, the system includes a first laser assembly 1, a second laser assembly 2, and a turntable 3. The turntable 3 is used to support and rotate the ingot 4 to be processed. The first laser assembly 1 includes a first laser 11, a first reflector 12, and a first laser focusing lens 13. The laser emitted by the first laser 11 is reflected by the first reflector 12 and focused by the first laser focusing lens 13, and then vertically downwards to process the ingot 4 to be processed on the turntable 3 from top to bottom. The second laser assembly 2 includes a second laser 21, a second reflector 22, a third reflector 23, a fourth reflector 25, and a second laser focusing lens 24. The laser emitted by the second laser 21 is reflected by the second reflector 22 and the third reflector 23, focused by the second laser focusing lens 24, and reflected by the fourth reflector 25, and then vertically upwards to process the ingot 4 to be processed on the turntable 3 from bottom to top. The first laser component 1 and the second laser component 2 process the ingot 4 from both the top and bottom directions, respectively. They can simultaneously grind and polish the upper and lower surfaces of the ingot 4, and also simultaneously cut the ingot 4, together completing the cutting of the entire depth of the ingot 4, thereby processing the side surface 42 of the ingot 4. This improves the efficiency of laser processing and is comparable to unidirectional cutting. Figure 2 , Figure 5 Compared to, such as Figure 6 As shown, it can also reduce the amount of material removed during cutting (i.e., Figure 6 and Figure 5Compared to other methods, the cutting groove is smaller in volume, maximizing raw material utilization and reducing costs.

[0049] The second laser component 2 processes the crystal ingot 4 from bottom to top, with its laser pointing vertically upward. Generally, due to space layout issues, lasers are installed above the workpiece to be processed, so multiple reflectors need to be set up to change the laser beam path in order to save space as much as possible.

[0050] The turntable 3 includes a C-axis module 33, a B-axis module 32, and a processing seat 34. The C-axis module 33 is mounted on the B-axis module 32, and the processing seat 34 is mounted on the C-axis module 33. The ingot to be processed 4 is fixed on the processing seat 34. The C-axis module 33 is used to drive the ingot to be processed 4 to rotate around its vertical central axis 41. The B-axis module 32 is used to drive the ingot to be processed 4 to swing in the vertical plane, so that the vertical central axis 41 of the ingot to be processed 4 is tilted relative to the vertical direction (Z-axis direction) to eliminate the cutting effect of the conical laser beam 5 on the side surface 42 of the ingot 4, thereby processing a cylindrical ingot 4 with the side surface 42 completely perpendicular to the bottom surface.

[0051] The C-axis module 33 rotates the ingot 4, which helps to laser-cut the side surface 42 of the ingot 4. The B-axis module 32 tilts the ingot 4 during processing, with the central axis of the ingot 4 tilted at an angle relative to the vertical direction. This eliminates the taper of the side surface 42 of the processed ingot 4 caused by the conical laser beam 5, preventing it from being completely perpendicular to the bottom surface and resulting in the ingot 4 exhibiting a conical shape that is smaller at the top and larger at the bottom (e.g., ...). Figure 3 Specifically, the B-axis module 32 drives the ingot 4 to be processed to swing in a vertical plane, such as... Figure 4 , Figure 6 This causes the vertical central axis 41 of the ingot 4 to be processed to deflect relative to the vertical direction (Z-axis direction) by an angle α, α = θ / 2, where θ is the cone angle of the conical laser beam 5. θ can be obtained through... To calculate, then D is the diameter of the beam incident on the first laser focusing mirror 13, W D The distance between the first laser focusing lens 13 and its laser focal point can also be represented by the focal length. In this way, the vertical central axis 41 of the ingot 4 is parallel to the side of the conical laser beam 5 near the ingot 4. When the ingot 4 rotates around its vertical central axis 41, the area swept by the side of the conical laser beam 5 on the ingot 4 forms the side surface 42 of the ingot 4. The side surface 42 of the ingot 4 is then parallel to its vertical central axis 41, while the vertical central axis 41 of the ingot 4 is perpendicular to its bottom surface. Thus, the side surface 42 of the ingot 4 is completely perpendicular to the bottom surface.

[0052] By controlling the parameters of the lasers output by the first laser component 1 and the second laser component 2 to be consistent, the taper angle θ of the upper and lower conical laser beams 5 can be made consistent. The B-axis module 32 makes the ingot 4 deflect by an angle α = θ / 2. The sides of the upper and lower conical laser beams 5 can be kept parallel to the vertical central axis 41 of the ingot 4, and the processed sides can be parallel to the vertical central axis 41, thus forming a cylindrical ingot 4.

[0053] As one implementation method, such as Figure 7 , Figure 8 As shown, the B-axis module 32 includes a swing motor 321, a swing plate 322, and a swing arm 323. One end of the swing plate 322 is perpendicularly connected to the output shaft of the swing motor 321, and the other end is perpendicularly connected to the swing arm 323. The C-axis module 33 includes a rotary motor 331, which is mounted on the swing arm 323. The processing seat 34 is drivenly connected to the rotary motor 331, and the rotation axis of the processing seat 34 is perpendicular to the rotation axis of the swing motor 321. A vacuum suction cup 35 is provided on the top of the processing seat 34, and the vacuum suction cup 35 is connected to a vacuum generator for fixing the ingot 4 to be processed by vacuum adsorption. The rotary motor 331 and the processing seat 34 can be simultaneously mounted on the swing arm 323, and the output shaft of the rotary motor 331 is parallel to the rotation axis of the processing seat 34 (e.g., ...). Figure 9 ) or vertical (such as Figure 10 The output shaft of the rotary motor 331 and the rotating shaft of the machining base 34 can be connected via gear transmission. The oscillating motor 321 drives the oscillating plate 322 to rotate in the vertical plane, thereby causing the swing arm 323 and the C-axis module 33 to oscillate in the vertical direction, such as... Figure 11 The rotary motor 331 drives the processing base 34 and the ingot 4 to be processed on it to rotate around the central axis of the processing base 34.

[0054] To achieve simultaneous processing of the upper and lower parts of the ingot 4, the rotation and linear movement of the ingot 4 to be processed need to be coordinated with the movement of the upper and lower lasers. As one implementation method, in this embodiment, for example... Figure 1 , Figure 7 The turntable 3 further includes a first Y-axis moving module 31, and the B-axis module 32 is mounted on the first Y-axis moving module 31. The first laser assembly 1 further includes a first X-axis moving module 16, a first Z-axis moving module 17, and a first laser cutting head 18. The first Z-axis moving module 17 is mounted on the first X-axis moving module 16, and the first laser cutting head 18 is mounted on the first Z-axis moving module 17. The first laser focusing lens 13 is disposed inside the first laser cutting head 18, and the output end of the first laser cutting head 18 is vertically downward toward the ingot 4 to be processed on the processing seat 34. The first laser assembly 1 is also provided with a first CCD automatic focusing system 19 for automatic focusing based on vision technology.

[0055] The second laser assembly 2 further includes a second X-axis moving module 201, a second Y-axis moving module 203, a second Z-axis moving module 202, and a second laser cutting head 204. The second Z-axis moving module 202 is mounted on the second X-axis moving module 201, the second Y-axis moving module 203 is mounted on the second Z-axis moving module 202, and the second laser cutting head 204 is mounted on the second Y-axis moving module 203. The second laser focusing lens 24 and the fourth reflecting mirror 25 are disposed inside the second laser cutting head 204, and the output end of the second laser cutting head 204 is vertically upward toward the ingot 4 to be processed on the processing seat 34. The second laser assembly 2 is also provided with a second CCD automatic focusing system 205 for automatic focusing based on vision technology.

[0056] Thus, the turntable 3 can be moved and positioned by the first Y-axis moving module 31. After positioning, it can rotate. During processing, it only needs to rotate and does not need to move linearly, thus avoiding the interference of linear movement with the coordinated operation of the upper and lower laser beams 5. During processing, the first laser cutting head 18 in the first laser assembly 1 can adjust the position of the focal point relative to the center of the ingot 4 through the first X-axis moving module 16 to perform ring-by-ring processing. The depth position of the focal point can be adjusted through the first Z-axis moving module 17 to perform depth stepping. During processing, the second laser cutting head 204 in the second laser assembly 2 can adjust the distance between the laser focal point and the center of the ingot 4 through the second X-axis moving module 201 and the second Y-axis moving module 203 to achieve ring-by-ring processing. The depth position of the focal point can be adjusted through the second Z-axis moving module 202 to perform depth stepping. At the same time, the cooperation of the second X-axis moving module 201, the second Y-axis moving module 203 and the second Z-axis moving module 202 can also provide space for the movement and positioning of the turntable 3, which is beneficial to the spatial layout of the equipment. Therefore, the arrangement and coordination of the motion modules in the aforementioned turntable 3, the first laser assembly 1, and the second laser assembly 2 are necessary to achieve the goal of simultaneous processing of the workpiece in both the upper and lower directions.

[0057] To ensure accurate positioning of the ingot 4 to be processed in the processing area, such as Figure 8 , Figure 12The present invention also includes a positioning component 6, which comprises a support column 61, a third Z-axis moving module 62, and an annular positioning light 63. The third Z-axis moving module 62 is mounted on the support column 61, and several concentric annular positioning lights 63 are mounted on the third Z-axis moving module 62. The positioning area is located on the moving path of the first Y-axis moving module 31 and directly below the annular positioning lights 63. The annular positioning lights 63 project positioning rings 64 onto the positioning area for positioning the vacuum chuck and the ingot 4 to be processed, respectively. The third Z-axis moving module 62 drives the annular positioning lights 63 to move up and down along the support column 61. Figure 13 The system can project positioning rings 64 with the same center but different diameters, corresponding to the sizes of 4, 6, 8, 10, and 12-inch conventional crystal ingots 4, to accommodate the processing of crystal ingots 4 of different diameters. These rings can also be changed arbitrarily according to the size of the crystal ingot 4. The second Z-axis moving module 202 can be in manual movement mode, and the height of the annular positioning light 63 can be manually adjusted by rotating the handwheel. Driven by the first Y-axis moving module 31, the processing seat 34 positions the centers of the vacuum chuck and the crystal ingot 4 to be processed relative to the centers of the corresponding positioning rings 64.

[0058] To leverage the advantages of multi-band lasers, as one implementation method, such as Figure 14 The first laser assembly 1 further includes a third laser 14 and a fifth reflector 15. The first laser 11 is used to emit a first wavelength laser, the first reflector 12 is used to reflect the first wavelength laser emitted by the first laser 11, the third laser 14 is used to emit a second wavelength laser, and the fifth reflector 15 is used to reflect the second wavelength laser emitted by the third laser 14. In a reasonably spatial arrangement, the first laser 11 and the third laser 14 are both located above the turntable 3, and the first reflector 12 and the fifth reflector 15 are positioned on... The laser beam is arranged in a parallel configuration, with the first reflector 12 positioned above the fifth reflector 15. The first reflector 12 is a total reflection mirror, while the fifth reflector 15 is a coated semi-transparent and semi-reflective mirror that reflects the second wavelength laser while allowing the first wavelength laser to pass through. The first wavelength laser emitted by the first laser 11 is reflected by the first reflector 12 and then passes through the fifth reflector 15. It shares the same optical path with the second wavelength laser emitted by the third laser 14 and reflected by the fifth reflector 15, and is focused onto the first laser focusing mirror 13 before vertically downwards onto the ingot 4 to be processed on the turntable 3. The vertically downward laser beam 5 combines the advantages of both the first and second wavelength lasers, such as increasing laser intensity, thereby improving laser processing efficiency.

[0059] The first and second wavelength lasers can be set according to actual needs. For example, the first wavelength laser can be infrared light, and the first laser 11 corresponds to an infrared fiber laser; the second wavelength laser can be green light, and the second laser 21 corresponds to a green laser. Furthermore, depending on the actual situation, other wavelength lasers, such as blue light, can be coupled in the same way to output a multi-band composite laser. Each wavelength laser is independently configured, and the parameters of each wavelength laser can be adjusted independently to meet various processing requirements.

[0060] Specifically, in this embodiment, the first reflector 12 and the fifth reflector 15 are arranged parallel to each other vertically and are both tilted at 45 degrees. The first laser 11 and the third laser 14 both emit horizontal laser beams 5. The first reflector 12 is located above the fifth reflector 15. The first reflector 12 is a total reflection mirror, and the fifth reflector 15 is a coated semi-transparent and semi-reflective mirror that reflects the second wavelength laser while allowing the first wavelength laser to pass through. Specifically, referring to the prior art, a first wavelength laser antireflection film is coated on the side of the fifth reflector 15 facing the first reflector 12. If the first wavelength laser is infrared light, it is an infrared antireflection film. A second wavelength laser high reflection film is coated on the side of the fifth reflector 15 facing the third laser 14. If the second wavelength laser is blue light, it is a blue light high reflection film.

[0061] To improve the performance of the upward laser, similar to the first laser assembly 1, as one embodiment, the second laser assembly 2 further includes a fourth laser 26 and a sixth reflector 27. The second laser 21 is used to emit a third wavelength laser, the second reflector 22 is used to reflect the third wavelength laser emitted by the second laser 21, the fourth laser 26 is used to emit a fourth wavelength laser, and the sixth reflector 27 is used to reflect the fourth wavelength laser emitted by the fourth laser 26. The second laser 21 and the fourth laser 26 are both located above the turntable 3, and the second reflector 22 and the sixth reflector 27 are located on... The laser is arranged in a parallel configuration, with the second reflector 22 positioned above the sixth reflector 27. The second reflector 22 is a total reflection mirror, while the sixth reflector 27 is a coated semi-transparent and semi-reflective mirror that reflects the fourth wavelength laser while allowing the third wavelength laser to pass through. The third wavelength laser emitted by the second laser 21 is reflected by the second reflector 22 and then passes through the sixth reflector 27, sharing the same optical path with the fourth wavelength laser emitted by the fourth laser 26 and reflected by the sixth reflector 27. The laser then passes sequentially through the second reflector 22, the third reflector 23, the second laser focusing lens 24, and the fourth reflector 25 before vertically ascending to the ingot 4 to be processed on the turntable 3. Specific implementation details can be found in the first laser assembly 1 and will not be elaborated here.

[0062] A method for processing silicon carbide ingots using bidirectional laser technology, employing the aforementioned bidirectional laser silicon carbide ingot processing apparatus, such as... Figure 19 It includes the following steps:

[0063] S1. Parameter settings are made on the control system. These parameters include the diameter and thickness of the final ingot, the cutting depth ratio between the first laser component 1 and the second laser component 2, the parameters of the V-groove, laser parameters, and the rotational speed n of the C-axis module 33. The control system calculates the deflection angle α of the B-axis module 33 based on the set parameters and automatically plans the laser cutting path for the layered processing of the first laser component 1 and the second laser component 2 (e.g., ...). Figure 15 , Figure 16 ), calculate the processing time.

[0064] The parameters of the V-shaped cutting groove include the maximum width L of the V-shaped cutting groove 43, the included angle β between the two sides of the V-shaped cutting groove 43, and the laser depth step H. The laser depth step H is the distance between two adjacent layers during layer processing. The laser parameters include laser power, laser frequency, pulse width, and duty cycle. The deflection angle α = θ / 2, where θ is the cone angle of the conical laser beam 5. D is the diameter of the beam incident on the first laser focusing mirror 13, W D The distance between the first laser focusing lens 13 and the laser focal point;

[0065] As one implementation method, such as Figure 16 , Figure 17 In the layered laser cutting path of the first laser component 1 and the second laser component 2, the width of each layer on the laser cutting path corresponding to the first laser component 1 gradually narrows from top to bottom, and the width of each layer on the laser cutting path corresponding to the second laser component 2 gradually narrows from bottom to top, ultimately forming the V-shaped cutting groove on the vertical cross-section. To make the width of the V-shaped cutting groove 43 as narrow as possible and to minimize the amount of material removed during cutting, thereby improving the material utilization rate, the included angle β = θ between the two sides of the V-shaped cutting groove 43, where θ is the cone angle of the conical laser beam 5. Where D is the diameter of the beam incident on the first laser focusing mirror 13, and W D The distance between the first laser focusing lens 13 and its laser focal point; during the processing of each layer, a ring-by-ring processing path is adopted, either from the inside to the outside or from the outside to the inside.

[0066] The parameters of the laser cutting path include the processing width L of each layer. n The laser width step M and laser moving speed V are defined as follows: the processing width L of each layer is the processing width of each layer during layered processing; the laser width step M is the step size between two adjacent rings when the laser processes ring by ring on each layer; and the laser moving speed V is the linear velocity of the laser cutting ring by ring, V = πr·n / 30, mm / s, where r is the radius of rotation at the cutting point, mm; π is a constant 3.14, dimensionless; and n is the rotational speed of the C-axis, revolutions per minute.

[0067] S2. Move and position the ingot 4 to be processed to the processing area, and then control the B-axis module 32 according to the deflection angle α to make the ingot 4 swing in the vertical direction. Figure 16 The angle between the vertical central axis 41 and the vertical direction is set to α. Then, the first laser component 1 and the second laser component 2 are controlled to make the diameters of the beams incident on the first laser focusing lens 13 and the second laser focusing lens 24 equal, and the optical parameters of the first laser focusing lens 13 and the second laser focusing lens 24 are also the same. That is, the shape of the conical laser beam 5 output by the first laser component 1 and the second laser component 2 is exactly the same, so as to ensure that the processed side surface 42 is perpendicular to the bottom surface. Then, the laser output by the first laser component and the second laser component is focused onto the upper and lower surfaces of the ingot to be processed by the CCD automatic focusing system, and the side surface of the ingot is cut according to the planned laser cutting path.

[0068] Specifically, such as Figure 8 , Figure 12 The method for moving and positioning the ingot to be processed to the processing area is as follows: a first Y-axis moving module 31 is set on the turntable 3, and the B-axis module 32 is mounted on the first Y-axis moving module 31; several concentric annular positioning lights 63 that can be raised and lowered are set above the positioning area; a vacuum suction cup 35 is set on the top of the processing seat 34, and the center of the vacuum suction cup 35 is located on the rotation axis of the processing seat 34; the height of the annular positioning lights 63 is adjusted according to the size of the ingot to be processed 4, and the corresponding concentric vacuum suction cups 35 and B-axis positioning lights are projected into the positioning area respectively. For the positioning ring 64 corresponding to the crystal ingot size, the vacuum chuck 35 is first moved to the corresponding positioning ring 64 by controlling the linear motion module, so that the center of the vacuum chuck 35 is aligned with the center of the positioning ring 34 corresponding to the vacuum chuck. Then, the crystal ingot 4 to be processed is placed on the vacuum chuck 35, and the center of the crystal ingot 4 to be processed coincides with the center of the positioning ring 64 corresponding to the crystal ingot. The crystal ingot 4 to be processed is then fixed by vacuum adsorption. Then, the first Y-axis motion module 31 is controlled to move the crystal ingot to be processed to the processing area of ​​the first laser component 1 and the second laser component 2.

[0069] The cutting depth ratio of the first laser component 1 and the second laser component 2 can be set to 1:1, and the parameters of the two laser components can be controlled to be consistent. In conjunction with each linear movement module and rotation module, the processing of the two laser components can be synchronized, thereby ensuring the smooth and stable operation of bidirectional laser processing.

[0070] After the side 42 of the ingot 4 is cut, the control system controls the B-axis module 32 to swing the ingot 4 vertically, returning it to the vertical direction along the vertical center axis 41. The lasers output from the first laser assembly 1 and the second laser assembly 2 are then focused onto the upper and lower surfaces of the ingot 4, respectively. Combined with the movement of the linear motion module and the C-axis module 33, the upper and lower surfaces of the ingot 4 are processed according to the planned laser processing path. Conventional methods can be used to process the upper and lower surfaces of the ingot 4, such as grinding or polishing in a circumferential outward or inward motion.

[0071] The above detailed description is a specific description of feasible embodiments of the present invention. These embodiments are not intended to limit the patent scope of the present invention. All equivalent implementations or modifications that do not depart from the present invention should be included in the patent scope of this case.

Claims

1. A bidirectional laser silicon carbide ingot processing device, characterized in that, The system includes a first laser assembly, a second laser assembly, and a turntable. The turntable is used to support and rotate the crystal ingot to be processed. The first laser assembly includes a first laser, a first reflector, and a first laser focusing lens. The laser emitted by the first laser is reflected by the first reflector and focused by the first laser focusing lens, and then processes the crystal ingot on the turntable vertically downwards from top to bottom. The second laser assembly includes a second laser, a second reflector, a third reflector, a fourth reflector, and a second laser focusing lens. The laser emitted by the second laser is reflected by the second and third reflectors, focused by the second laser focusing lens, and reflected by the fourth reflector, and then processes the crystal ingot on the turntable vertically upwards from bottom to top. The turntable includes a C-axis module, a B-axis module, and a processing base. The C-axis module is mounted on the B-axis module, and the processing base is mounted on the C-axis module. The ingot to be processed is fixed on the processing base. The C-axis module is used to drive the ingot to be processed to rotate around its vertical central axis. The B-axis module is used to drive the ingot to be processed to swing in the vertical plane, so that the vertical central axis of the ingot to be processed is tilted relative to the vertical direction, thereby eliminating the cutting effect of the conical laser beam on the side of the ingot, and thus processing a cylindrical ingot with the side and bottom surfaces completely perpendicular. The turntable also includes a first Y-axis moving module, and the B-axis module is mounted on the first Y-axis moving module; It also includes a positioning component, which comprises a support column, a third Z-axis moving module, and a ring-shaped positioning light. The third Z-axis moving module is mounted on the support column, and several concentric ring-shaped positioning lights are mounted on the third Z-axis moving module. The positioning area is located on the moving path of the first Y-axis moving module and directly below the ring-shaped positioning lights. A circular vacuum chuck is provided on the top of the processing base for fixing the ingot to be processed by vacuum adsorption. The ring-shaped positioning lights project positioning rings for positioning the vacuum chuck and the ingot to be processed, respectively, onto the positioning area. The third Z-axis moving module drives the ring-shaped positioning lights to move up and down along the support column to project positioning rings with the same center but different diameters to accommodate ingots of different diameters. Driven by the first Y-axis moving module, the processing base positions the centers of the vacuum chuck and the ingot to be processed to the centers of the corresponding positioning rings. The B-axis module is used to drive the ingot to be processed to swing in the vertical plane, causing the vertical central axis of the ingot to be processed to deflect relative to the vertical direction by an angle α, α=θ / 2, where θ is the cone angle of the conical laser beam. D is the diameter of the beam incident on the first laser focusing mirror, W D The distance between the first laser focusing lens and its laser focal point is denoted as .

2. The bidirectional laser silicon carbide ingot processing apparatus according to claim 1, characterized in that, The first laser assembly further includes a first X-axis moving module, a first Z-axis moving module, and a first laser cutting head. The first Z-axis moving module is mounted on the first X-axis moving module, and the first laser cutting head is mounted on the first Z-axis moving module. The first laser focusing lens is disposed inside the first laser cutting head. The output end of the first laser cutting head is vertically downward, and under the drive of the first X-axis moving module and the first Z-axis moving module, the focal point of the output laser beam is focused downward onto the ingot to be processed on the processing seat. The second laser assembly further includes a second X-axis moving module, a second Y-axis moving module, a second Z-axis moving module, and a second laser cutting head. The second Z-axis moving module is mounted on the second X-axis moving module, the second Y-axis moving module is mounted on the second Z-axis moving module, and the second laser cutting head is mounted on the second Y-axis moving module. The second laser focusing lens and the fourth reflecting mirror are disposed inside the second laser cutting head. The output end of the second laser cutting head is vertically upward, and under the drive of the second X-axis moving module, the second Y-axis moving module, and the second Z-axis moving module, the focal point of the output laser beam is focused upward onto the ingot to be processed on the processing seat.

3. The bidirectional laser silicon carbide ingot processing apparatus according to claim 1, characterized in that, The first laser assembly further includes a third laser and a fifth reflector. The first laser emits a first wavelength laser, the first reflector reflects the first wavelength laser emitted by the first laser, the third laser emits a second wavelength laser, and the fifth reflector reflects the second wavelength laser emitted by the third laser. The first laser and the third laser are both located above the turntable. The first reflector and the fifth reflector are arranged vertically parallel to each other, with the first reflector located above the fifth reflector. The first reflector is a total reflection mirror, and the fifth reflector is a coated semi-transparent and semi-reflective mirror that reflects the second wavelength laser while allowing the first wavelength laser to pass through. The first wavelength laser emitted by the first laser is reflected by the first reflector and then passes through the fifth reflector, sharing the same optical path with the second wavelength laser emitted by the third laser and reflected by the fifth reflector. The laser beams converge on the first laser focusing mirror and then vertically downwards to the ingot to be processed on the turntable.

4. The bidirectional laser silicon carbide ingot processing apparatus according to claim 1, characterized in that, The second laser assembly further includes a fourth laser and a sixth reflector. The second laser emits a third wavelength laser, and the second reflector reflects the third wavelength laser emitted by the second laser. The fourth laser emits a fourth wavelength laser, and the sixth reflector reflects the fourth wavelength laser emitted by the fourth laser. Both the second and fourth lasers are located above the turntable. The second and sixth reflectors are arranged vertically in parallel, with the second reflector above the sixth reflector. The second reflector is a total reflection mirror, and the sixth reflector is a coated semi-transparent and semi-reflective mirror that reflects the fourth wavelength laser while allowing the third wavelength laser to pass through. The third wavelength laser emitted by the second laser is reflected by the second reflector and then passes through the sixth reflector, sharing the same optical path with the fourth wavelength laser emitted by the fourth laser and reflected by the sixth reflector. After passing through the third reflector, the second laser focusing mirror, and the fourth reflector in sequence, the laser reaches the ingot to be processed on the turntable vertically upward.

5. The bidirectional laser silicon carbide ingot processing apparatus according to claim 1, characterized in that, The B-axis module includes a swing motor, a swing plate, and a swing arm. One end of the swing plate is perpendicularly connected to the output shaft of the swing motor, and the other end is perpendicularly connected to the swing arm. The C-axis module includes a rotary motor, which is mounted on the swing arm. The machining seat is driven and connected to the rotary motor, and the rotation axis of the machining seat is perpendicular to the rotation axis of the swing motor.

6. A method for processing bidirectional laser silicon carbide ingots, employing the bidirectional laser silicon carbide ingot processing apparatus as described in any one of claims 1 to 5, characterized in that, Includes the following steps: S1. Set parameters on the control system. The parameters set include the diameter and thickness of the final ingot, the cutting depth ratio of the first laser component and the second laser component, the parameters of the V-shaped cutting groove, the laser parameters, and the rotational speed n of the C-axis module. The control system calculates the deflection angle α of the B-axis module based on the set parameters, automatically plans the laser cutting path for the layered processing of the first laser component and the second laser component, and calculates the processing time. The parameters of the V-shaped cutting groove include the maximum width L of the V-shaped cutting groove, the included angle β between the two sides of the V-shaped cutting groove, and the laser depth step H. The laser depth step H is the distance between two adjacent layers during layer processing. The laser parameters include laser power, laser frequency, pulse width, and duty cycle. The deflection angle α = θ / 2, where θ is the cone angle of the conical laser beam. D is the diameter of the beam incident on the first laser focusing mirror, and WD is the distance between the first laser focusing mirror and its laser focal point; S2. Move and position the ingot to be processed to the processing area. Then, control the B-axis module according to the deflection angle α to make the ingot swing vertically so that the angle between its vertical central axis and the vertical direction is α. Then, control the first laser assembly and the second laser assembly to make the diameter of the beam incident on the first laser focusing lens and the second laser focusing lens equal, and the optical parameters of the first laser focusing lens and the second laser focusing lens are also the same. Then, use the CCD automatic focusing system to focus the laser output from the first laser assembly and the second laser assembly onto the upper and lower surfaces of the ingot to be processed, and cut the side of the ingot according to the planned laser cutting path. S3. After the side cutting of the crystal ingot is completed, the control system controls the B-axis module to swing the crystal ingot in the vertical direction, so that its vertical center axis returns to the vertical direction. The lasers output by the first laser component and the second laser component are focused on the upper and lower surfaces of the crystal ingot, respectively. With the movement of the linear motion module and the C-axis module, the upper and lower surfaces of the crystal ingot are processed according to the planned laser processing path.

7. The method for processing bidirectional laser silicon carbide ingots according to claim 6, characterized in that, In step S1, during the layered laser cutting path of the first and second laser components, the width of each layer on the laser cutting path corresponding to the first laser component gradually narrows from top to bottom, while the width of each layer on the laser cutting path corresponding to the second laser component gradually narrows from bottom to top. This ultimately forms the V-shaped cutting groove on the vertical cross-section. The included angle β = θ between the two sides of the V-shaped cutting groove, where θ is the cone angle of the conical laser beam. Where D is the diameter of the beam incident on the first laser focusing lens, and WD is the distance between the first laser focusing lens and the laser focal point; during the processing of each layer, a ring-by-ring processing path is adopted, either from the inside to the outside or from the outside to the inside; The parameters of the laser cutting path include the processing width L of each layer. n Laser width step M, laser moving speed V, and the processing width L of each layer. n The laser width step M is the step size between adjacent rings when the laser processes each layer ring by ring. The laser moving speed V is the linear velocity of the laser cutting ring by ring, V=πr·n / 30, mm / s, where r is the radius of rotation at the cutting point, mm; π is a constant 3.14, dimensionless; and n is the rotational speed of the C-axis, revolutions per minute.

8. The method for processing silicon carbide ingots using bidirectional laser technology according to claim 6, characterized in that, The method for moving and positioning the ingot to be processed to the processing area in step S2 is as follows: A first Y-axis moving module is set on the turntable, and the B-axis module is installed on the first Y-axis moving module; several concentric ring positioning lights that can be raised and lowered are set above the positioning area; a vacuum suction cup is set on the top of the processing seat, and the center of the vacuum suction cup is located on the rotating shaft of the processing seat; the height of the ring positioning lights is adjusted according to the size of the ingot to be processed, and the corresponding vacuum suction cups and positioning rings of the corresponding ingot size are projected into the positioning area respectively. First, the vacuum suction cups are moved to the corresponding positioning rings by controlling the linear moving module, so that the center of the vacuum suction cup is aligned with the center of the positioning ring corresponding to the vacuum suction cup. Then, the ingot to be processed is placed on the vacuum suction cup, and the center of the ingot to be processed coincides with the center of the positioning ring corresponding to the ingot. The ingot to be processed is then fixed by vacuum adsorption. Finally, the first Y-axis moving module is controlled to move the ingot to be processed to the processing area of ​​the first laser component and the second laser component.

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