A polishing pad and a final polishing device

Abstract

This disclosure provides a polishing pad and a final polishing apparatus. The polishing pad includes: a substrate; and a deformable unit disposed on the substrate. The deformable unit is capable of switching the polishing pad between a first shape mode and a second shape mode by deformation. In the first shape mode, the polishing surface of the polishing pad has grooves, and in the second shape mode, the polishing surface of the polishing pad is flat.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor wafer manufacturing, and more particularly to a polishing pad and a final polishing apparatus. Background Technology

[0002] Wafer polishing is a crucial step in semiconductor manufacturing, primarily aimed at precisely grinding the wafer surface to achieve the required flatness and smoothness. During polishing, the wafer is placed on a polishing table, and the friction between the polishing pad and the wafer, combined with the use of polishing fluid, removes uneven areas from the wafer surface. The polishing pad, as a core component in the polishing process, has a surface structure that directly impacts the polishing effect.

[0003] In existing polishing equipment, polishing pads are mainly designed in two ways: grooved polishing pads and non-grooved polishing pads. Grooved polishing pads facilitate the flow of polishing slurry, improving polishing efficiency and allowing the slurry to better reach the area where the wafer contacts the pad, thus enhancing the polishing effect. However, this design may affect the flatness of the wafer surface, as the presence of grooves can lead to uneven wear. On the other hand, non-grooved polishing pads provide a smoother polishing effect, which is beneficial for achieving a high degree of wafer flatness. However, this design, lacking grooves, hinders the flow of polishing slurry, and after polishing, the strong adhesion between the wafer and the pad makes it difficult to remove the wafer, potentially leading to wafer damage or reduced production efficiency.

[0004] In summary, existing polishing pad designs have certain limitations in meeting the requirements of polishing efficiency and surface flatness. A new polishing pad design is needed to achieve a balance between polishing fluid flow and wafer surface flatness, while also solving the problem of wafer removal after polishing. Summary of the Invention

[0005] This disclosure provides a polishing pad and a final polishing device that can flexibly switch shape modes according to the needs of the polishing stage, optimize the flow of polishing fluid, improve the surface flatness of the wafer, facilitate wafer removal, and improve the efficiency and effectiveness of the entire polishing process.

[0006] The technical solution disclosed herein is implemented as follows:

[0007] In a first aspect, embodiments of this disclosure provide a polishing pad, the polishing pad comprising:

[0008] Matrix;

[0009] A deformable unit disposed on the substrate is capable of switching the polishing pad between a first shape mode and a second shape mode by deformation. In the first shape mode, the polishing surface of the polishing pad has grooves, and in the second shape mode, the polishing surface of the polishing pad is flat.

[0010] In some optional examples, the polishing pad further includes a support layer on which the substrate and the deformable unit are disposed.

[0011] In some alternative examples, the deformable unit is an inflatable structure that expands and deforms by being filled with gas.

[0012] In some optional examples, the polishing pad further includes:

[0013] A gas pipeline, wherein the gas pipeline is connected to the inflatable structure;

[0014] A gas source, which is used to fill the inflatable structure with gas through the gas pipeline;

[0015] An air valve is provided on the gas pipeline to control the expansion amount of the inflatable structure.

[0016] In some alternative examples, the deformable unit is a ventable structure that contracts and deforms by the vented gas.

[0017] In some optional examples, the polishing pad further includes:

[0018] A vacuum line, which is connected to the ventable structure;

[0019] A vacuum source, the vacuum source being used to expel gas from the ventable structure through the vacuum line;

[0020] A vacuum valve is provided on the vacuum line to control the amount of contraction of the ventable structure.

[0021] In some optional examples, the deformable unit consists of multiple deformable modules, each of which can deform independently.

[0022] In some alternative examples, the trench is formed as a plurality of concentric rings.

[0023] In a second aspect, embodiments of this disclosure provide a final polishing apparatus, the final polishing apparatus including the polishing pad according to the first aspect.

[0024] In some optional examples, the final polishing apparatus further includes:

[0025] A rotary worktable, wherein the polishing pad is disposed on the rotary worktable and rotates together with the rotary worktable;

[0026] A clamping device for holding a wafer and pressing the held wafer against the polishing pad.

[0027] This disclosure provides a polishing pad and a final polishing apparatus. When using the grooved mode, it facilitates the flow of polishing fluid, improves polishing efficiency, ensures uniform distribution of polishing fluid, and enhances the polishing effect of the wafer. When switching to the non-grooved mode, it makes the surface of the polishing pad flat, thereby improving the surface flatness of the wafer. When switching back to the grooved mode, it reduces the adhesion of the polishing pad to the wafer, making the wafer easier to remove, avoiding damage to the wafer, and improving production efficiency. Attached Figure Description

[0028] Figure 1 This is a cross-sectional schematic diagram of a polishing pad provided in an embodiment of the present disclosure, wherein the polishing pad is in a first shape mode.

[0029] Figure 2 This is a cross-sectional schematic diagram of a polishing pad provided in an embodiment of the present disclosure, wherein the polishing pad is in a second shape mode.

[0030] Figure 3 This is a cross-sectional schematic diagram of a polishing pad provided in another embodiment of the present disclosure.

[0031] Figure 4 This is a cross-sectional schematic diagram of a polishing pad provided in another embodiment of the present disclosure.

[0032] Figure 5 This is a top view schematic diagram of a polishing pad provided in an embodiment of this disclosure.

[0033] Figure 6 A three-dimensional schematic diagram of the final polishing equipment provided in this disclosure. Detailed Implementation

[0034] The technical solutions in this disclosure will now be clearly and completely described with reference to the accompanying drawings.

[0035] In the semiconductor manufacturing field, wafer polishing plays a crucial role, directly affecting the surface quality of the wafer and consequently the chip performance and reliability in subsequent manufacturing processes. The polishing pad, as a core component of this process, is directly related to the distribution of the polishing slurry, the surface flatness of the wafer, and the polishing efficiency. Currently, polishing pad designs are mainly divided into two types: grooved and grooveless, each with its own advantages and limitations. While grooved polishing pads facilitate the flow of polishing slurry and make wafer removal easier due to lower adhesion after polishing, they may affect the surface flatness of the polished wafer. This is because the presence of grooves can lead to uneven pressure distribution on the wafer surface, thus affecting the uniformity of polishing. On the other hand, grooveless polishing pads can achieve better surface flatness, but the lack of grooves restricts the flow of polishing slurry, potentially reducing polishing efficiency. Furthermore, after polishing, the stronger adhesion between the grooveless polishing pad and the wafer makes wafer removal difficult, increasing operational complexity and potentially causing wafer damage due to excessive force during removal.

[0036] To address these challenges in existing technologies, this disclosure proposes an innovative technical solution aimed at resolving the conflict between polishing efficiency and surface flatness in existing polishing pad designs, and optimizing the wafer removal process. The technical solution of this disclosure relates to a polishing pad with deformable units capable of switching between two shape modes according to polishing requirements, to adapt to different polishing process requirements.

[0037] Specifically, see Figure 1 and Figure 2 This disclosure provides a polishing pad 10, which may include a substrate 11 and deformable units 12 disposed on the substrate 11. Figure 1 and Figure 2 The area filled with dots schematically shows the base 11, and the area filled with cross-sectional lines schematically shows the deformable element 12. Additionally, in... Figure 1 and Figure 2 The image also shows a clamp 30 above the polishing pad 10 and a wafer W clamped by the clamp 30.

[0038] The deformable unit 12 can deform the polishing pad 10 as follows: Figure 1 The first shape pattern shown in the figure and such Figure 2 The diagram shows a switching between two shape modes. In the first shape mode, the polishing surface 10P of the polishing pad 10 has grooves G formed, while in the second shape mode, the polishing surface 10P of the polishing pad 10 is flat. More specifically, for the polishing surface 10P of the polishing pad 10, as shown in... Figure 1As shown, one part of the polished surface 10P is composed of a substrate 11, and the portion composed of the substrate 11 is fixed or does not change. The other part is composed of deformable units 12, and the portion composed of the deformable units 12 in the polished surface 10P can change, such as in... Figure 1 In the polished surface 10P, the fixed portion and the portion that changes together form the aforementioned groove G, as shown in... Figure 2 In the polished surface 10P, the fixed part and the part that will change are on the same plane, so that the entire polished surface 10P is flat.

[0039] For the polishing pad 10 according to the embodiments of the present disclosure, during the polishing of the wafer W, the polishing pad 10 can be in a first shape mode, i.e., a mode with grooves G, for example, in the initial polishing stage (see...). Figure 1 This facilitates the flow of the polishing slurry, improving polishing efficiency and allowing the slurry to better reach the area where the wafer W contacts the polishing pad 10, thereby enhancing the polishing effect. The presence of the groove G provides a flow path for the polishing slurry, ensuring its uniform distribution throughout the polishing process, which is crucial for improving the polishing uniformity and efficiency of the wafer W. Alternatively, at the end of the polishing stage, the polishing pad 10 can be switched to a second shape mode, i.e., a mode without the groove G (see [link to polishing pad]). Figure 2In this way, the polishing surface 10P of the polishing pad 10 is flat, resulting in better surface flatness of the polished wafer W. Furthermore, when the wafer W needs to be removed after polishing, the polishing pad 10 can be switched to the first shape mode, i.e., the mode with grooves G. This reduces the adhesion force of the polishing pad 10 to the wafer W, making it easier to remove. By reducing the adhesion force between the polishing pad 10 and the wafer W, damage to the wafer W due to excessive force during removal can be avoided, improving production efficiency. The deformable unit 12 of the polishing pad 10 can switch between two shape modes through deformation. This flexibility allows the polishing pad 10 to adapt to different polishing needs, whether it is a stage requiring grooves G to improve polishing efficiency or a stage requiring a flat polishing surface 10P to achieve better flatness of the wafer W. Because the polishing pad 10 can quickly switch shape modes at different polishing stages, this greatly simplifies the operation process. Operators can easily adjust the state of the polishing pad 10 according to different polishing stages, thereby improving the convenience and efficiency of the entire polishing process. By reducing wafer damage caused by excessive adhesion between the polishing pad 10 and the wafer W, and by improving polishing efficiency and surface quality, the polishing pad 10 of this disclosure helps to reduce overall production costs. Furthermore, due to the adaptability of the polishing pad 10, it reduces the additional costs associated with replacing different types of polishing pads. In summary, the polishing pad 10 according to the embodiments of this disclosure, through its innovative design, not only improves polishing efficiency and the surface quality of the wafer W, but also simplifies the wafer W removal process, reduces production costs, and improves operational convenience, providing an efficient and economical polishing solution for the semiconductor manufacturing industry.

[0040] In some embodiments of this disclosure, see Figure 1 and Figure 2 The polishing pad 10 may also include a support layer 13, a substrate 11 and deformable units 12 disposed on the support layer 13.

[0041] By adding a support layer 13 to the polishing pad 10, with both the substrate 11 and the deformable unit 12 disposed on the support layer 13, the overall structural stability of the polishing pad 10 can be significantly improved. As the support for the substrate 11 and the deformable unit 12, the support layer 13 can evenly distribute the pressure and stress generated during the polishing process, reducing deformation or damage caused by uneven local stress. The addition of the support layer 13 makes the polishing pad 10 more durable during long-term polishing. The support layer 13 can absorb some of the impact force, reducing direct damage to the substrate 11 and the deformable unit 12, thereby extending the service life of the polishing pad 10 and improving the reliability of the polishing process. Because the support layer 13 enhances the structural stability of the polishing pad 10, operators can operate with greater peace of mind, without worrying about safety issues caused by accidental damage to the polishing pad 10, thus improving operational safety. The addition of the support layer 13 allows the polishing pad 10 to adapt to a wider range of polishing process conditions, including different pressures, temperatures, and types of polishing fluids. This adaptability allows the polishing pad 10 to be used in various different polishing environments, increasing its application range. The design of the support layer 13 also makes the maintenance and replacement of the polishing pad 10 more convenient. If the substrate 11 or the deformable unit 12 needs to be replaced or maintained, the support layer 13 can serve as a stable platform to facilitate related operations.

[0042] In some embodiments of this disclosure, see Figure 3 The deformable unit 12 can be an inflatable structure that expands and deforms when filled with gas. Figure 3 In the diagram, the dashed lines indicate the state of the inflatable structure before it is filled with gas, while the solid lines indicate the state of the inflatable structure after it is filled with gas.

[0043] The inflatable structure design of the deformable unit 12 makes the deformation process simple and efficient. By controlling the amount of gas injected, the expansion degree of the deformable unit 12 can be precisely adjusted, thereby achieving precise control over the surface shape of the polishing pad 10. This deformation method has a fast response speed and can quickly adapt to different polishing needs. The method of using gas expansion to achieve deformation avoids the wear and failure risks that may be caused by using mechanical parts. Gas expansion is a gentle and controllable process that does not generate severe mechanical stress, thus ensuring the safety and reliability of the deformation process. The inflatable structure can quickly adjust its shape according to actual polishing needs, allowing the polishing pad 10 to flexibly cope with different polishing stages. For example, in the initial polishing stage where a groove G is needed to improve the flow of polishing fluid, gas can be omitted from the inflatable structure to form the groove G; in the final polishing stage where a flat polished surface 10P is needed to improve the surface flatness of the wafer W, gas can be injected into the inflatable structure to obtain a flat polished surface 10P. Because the inflatable structure avoids physical wear of mechanical parts, the lifespan of the polishing pad 10 can be extended. The number of gas expansion and contraction cycles can be very high without significantly reducing performance, making the polishing pad 10 more economical and durable. The inflatable structure simplifies the maintenance of the polishing pad 10. Without complex mechanical parts, maintenance costs and difficulty are greatly reduced, improving the ease of use of the polishing pad 10. The inflatable structure can automatically adjust according to changes in environmental pressure and temperature, maintaining stable performance of the polishing pad 10. This adaptive capability allows the polishing pad 10 to operate under a wider range of process conditions, unaffected by environmental changes. By precisely controlling the gas injection volume, the inflatable structure can achieve very fine deformation control, which is crucial for improving polishing accuracy, especially in high-end semiconductor manufacturing fields requiring fine polishing.

[0044] In some embodiments of this disclosure, see Figure 3 The polishing pad 10 may also include:

[0045] Gas line 14, which is connected to an inflatable structure;

[0046] Gas source 15, gas source 15 is used to fill gas into the inflatable structure through gas pipeline 14;

[0047] Gas valve 16 is installed on gas pipeline 14 to control the expansion of the inflatable structure.

[0048] By precisely controlling the amount of gas supplied by the gas source 15 to the inflatable structure through the gas valve 16, the shape of the polishing surface 10P of the polishing pad 10 can be finely adjusted. This control method allows the operator to adjust the expansion degree of the inflatable structure according to specific polishing needs to adapt to different polishing conditions. Precise deformation control enables the polishing pad 10 to better adapt to the surface characteristics of the wafer W, especially in areas requiring fine polishing. By adjusting the expansion amount of the inflatable structure, the contact pressure between the polishing pad 10 and the wafer W can be optimized, thereby improving polishing accuracy and surface quality. By precisely controlling the gas supply, the inflatable structure can achieve different degrees of expansion to adapt to different polishing stages and polishing fluid requirements. For example, in stages where trenches G are needed to improve polishing fluid flow, the inflatable structure may not expand to form trenches, as in... Figure 3 As shown by dashed lines, the inflatable structure can expand to flatten the polished surface 10P to improve the surface flatness of the wafer W during the stage where a flat polished surface 10P is required. This flexibility allows the polishing pad 10 to provide optimal performance at different polishing stages. Through the combined use of the gas valve 16 and gas line 14, the operator can easily control the expansion state of the inflatable structure without complex mechanical adjustments. This design simplifies the operation process and improves ease of use. Since the deformation control of the inflatable structure relies on the adjustment of gas pressure, reliance on mechanical components is reduced, thereby lowering maintenance costs and failure rates. The gas filling and releasing process is gradual and controllable, without generating severe mechanical stress, thus ensuring the safety of the deformation process. Precise control of the gas filling amount allows the polishing pad 10 to quickly respond to different polishing needs, reducing downtime caused by adjusting the state of the polishing pad 10 and improving production efficiency.

[0049] In some embodiments of this disclosure, see Figure 4 The deformable unit 12 can be a ventable structure, which contracts and deforms upon the release of gas. Figure 4 In the diagram, the dashed line shows the state of the ventable structure before the gas is discharged, and the solid line shows the state of the ventable structure after the gas is discharged.

[0050] The ventable structure design of the deformable unit 12 makes the deformation process simple and efficient. By controlling the amount of gas discharged, the shape of the deformable unit 12 can be quickly adjusted to respond rapidly to different polishing requirements. This rapid response capability allows the polishing pad 10 to adapt to rapidly changing production environments and improve production efficiency. The gas discharge method avoids the wear and failure risks associated with mechanical parts. Gas discharge is a gentle and controllable process that does not generate severe mechanical stress, thus ensuring the safety and reliability of the deformation process. This design reduces production interruptions caused by mechanical failures and improves the stability of the entire polishing system. The deformable unit 12 can quickly adjust its shape according to actual polishing needs. For example, in the initial polishing stage where a groove G is needed to improve the flow of polishing fluid, the gas in the ventable structure can be discharged to form the groove G; in the final polishing stage where a smooth polished surface 10P is needed to improve the surface flatness of the wafer W, the gas in the ventable structure can be left undischarged to obtain a smooth polished surface 10P. This flexibility allows the polishing pad 10 to flexibly cope with different polishing stages and improve the polishing effect. Because the ventable structure avoids physical wear of mechanical parts, maintenance and operating costs are reduced. The number of gas venting and refilling cycles can be very high without significantly degrading performance, making the polishing pad 10 more economical and durable. The ventable structure simplifies the operation of the polishing pad 10, allowing operators to easily adjust its state according to different polishing stages, thereby improving the convenience and efficiency of the entire polishing process. The ventable structure automatically adjusts to changes in environmental pressure and temperature, maintaining stable performance of the polishing pad 10. This adaptive capability enables the polishing pad 10 to operate under a wider range of process conditions, unaffected by environmental changes. The gas venting and refilling process consumes less energy than mechanical movement, helping to reduce the overall energy consumption of the polishing system and achieve a more environmentally friendly production process.

[0051] In some embodiments of this disclosure, see Figure 4 The polishing pad 10 may also include:

[0052] Vacuum line 17, which is connected to the ventable structure;

[0053] Vacuum source 18, which is used to exhaust gas from the ventable structure through vacuum line 17;

[0054] Vacuum valve 19 is installed on vacuum line 17 to control the amount of contraction of the ventable structure.

[0055] Vacuum valve 19 precisely controls the amount of gas discharged from vacuum source 18 through vacuum line 17 from the ventable structure, enabling fine adjustment of the polishing surface 10P of polishing pad 10. This control method allows the operator to adjust the shrinkage degree of the ventable structure according to specific polishing needs to adapt to different polishing conditions. Precise deformation control allows polishing pad 10 to better adapt to the surface characteristics of wafer W, especially in areas requiring fine polishing. By adjusting the shrinkage amount of the ventable structure, the contact pressure between polishing pad 10 and wafer W can be optimized, thereby improving polishing accuracy and surface quality. By precisely controlling the gas discharge amount, the ventable structure can achieve different degrees of shrinkage to adapt to different polishing stages and polishing fluid requirements. For example, in stages requiring a flat polishing surface 10P to improve the surface flatness of wafer W, the ventable structure can stop discharging gas to make the polishing surface 10P flat. This flexibility allows polishing pad 10 to provide optimal performance at different polishing stages. By using vacuum valve 19 and vacuum line 17 in conjunction, the operator can easily control the retraction state of the ventable structure without complex mechanical adjustments. This design simplifies the operation process and improves ease of use. Precise control of the gas discharge volume allows polishing pad 10 to quickly respond to different polishing needs, reducing downtime caused by adjusting the state of polishing pad 10 and improving production efficiency.

[0056] In some embodiments of this disclosure, see Figures 1 to 4 The deformable unit 12 can be composed of multiple deformable modules 121, and each deformable module 121 can deform independently.

[0057] Through multiple independent deformable modules 121, the polishing pad 10 can flexibly create groove patterns of different shapes. This design allows for individual control of each deformable module 121 according to specific polishing requirements, forming a specific shape and distribution of the grooves G to meet the needs of different polishing effects. The independent deformability of multiple deformable modules 121 enables the polishing pad 10 to adapt to complex polishing needs, especially when different areas of the wafer W need to be polished differently. This flexibility makes it possible to achieve regional polishing, improving the adaptability and flexibility of the polishing process. By independently controlling each deformable module 121, the contact pressure between the polishing pad 10 and the wafer W can be optimized, achieving a more uniform polishing effect. This uniformity is crucial for improving the overall performance and quality of the wafer W. The independently controlled deformable modules 121 simplify the operation process. Operators can easily adjust the state of each deformable module 121 according to different polishing stages, thereby improving the convenience and efficiency of the entire polishing process. The independent deformability of the multiple deformable modules 121 allows the polishing pad 10 to more precisely adapt to the surface characteristics of the wafer W, especially in areas requiring fine polishing. This precise control is crucial for improving the polishing accuracy and surface quality of the wafer W. The independently controlled deformable modules 121 enable the polishing pad 10 to respond quickly to different polishing requirements, reducing downtime caused by adjusting the state of the polishing pad 10 and improving production efficiency.

[0058] In some embodiments of this disclosure, see Figure 5 The groove G can be formed into multiple concentric rings.

[0059] The multiple concentric ring structures formed by the trenches G facilitate uniform distribution of the polishing slurry on the surface of the wafer W, allowing the slurry to better reach the area where the wafer W contacts the polishing pad 10, thus improving polishing efficiency and effectiveness. The concentric ring-shaped trenches G provide a more uniform polishing pressure distribution, especially between the edges and center of the wafer W. This uniformity helps reduce polishing unevenness caused by uneven pressure distribution, improving the overall surface smoothness of the wafer W. The concentric ring-shaped trenches G help reduce defects caused by uneven contact between the polishing pad 10 and the wafer W, such as edge warping or center depressions. This design reduces the occurrence of these defects by uniformly distributing polishing pressure. The design of the concentric ring-shaped trenches G reduces wear during the polishing process because the wear on the polishing pad 10 is more evenly distributed. This helps extend the lifespan of the polishing pad 10, reducing replacement frequency and costs. The design of the concentric ring-shaped trenches G simplifies the adjustment process of the polishing pad 10. Operators can easily adjust the activation state of the trenches G as needed to adapt to different polishing requirements.

[0060] See Figure 6The present disclosure also provides a final polishing apparatus 1, which may include a polishing pad 10 according to the foregoing embodiments of the present disclosure.

[0061] The final polishing apparatus 1 integrates the polishing pad 10 according to this disclosure, enabling the final polishing apparatus 1 to achieve multiple polishing modes to meet different polishing needs. Since the polishing pad 10 can switch between grooved and non-grooved modes as needed, the final polishing apparatus 1 can adapt to different polishing stages, thereby improving the efficiency and quality of the entire polishing process.

[0062] In some embodiments of this disclosure, see Figure 6 The final polishing equipment 1 may also include:

[0063] A rotary worktable 20 is provided, and a polishing pad 10 is set on the rotary worktable 20 and rotates together with the rotary worktable 20.

[0064] The clamp 30 is used to clamp the wafer W and press the clamped wafer W against the polishing pad 10. Additionally, as in... Figure 6 As shown, the clamp 30 holding the wafer W can also be rotated, thereby further facilitating the polishing of the wafer W.

[0065] Polishing pad 10 is mounted on rotary table 20 and rotates with it, resulting in more uniform contact between wafer W and polishing pad 10, thus improving the polishing uniformity of the entire wafer W surface. Clamp 30 holds wafer W and presses it against polishing pad 10, while also rotating. This dual-rotation mechanism increases the contact area between polishing pad 10 and wafer W, improving polishing efficiency. Applying pressure to wafer W through clamp 30 allows control of pressure distribution during polishing, resulting in better polishing quality. Uniform pressure distribution helps reduce damage and scratches during polishing. Rotary table 20 provides a stable rotating platform, making the polishing process smoother and reducing uneven polishing caused by equipment vibration.

[0066] It should be noted that the technical solutions described in this disclosure can be combined arbitrarily as long as they do not conflict.

[0067] The above description is merely a specific embodiment of this disclosure, but the scope of protection of this disclosure is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this disclosure should be included within the scope of protection of this disclosure. Therefore, the scope of protection of this disclosure should be determined by the scope of the claims.

Claims

1. A polishing pad, characterized in that, The polishing pad includes: Matrix; A deformable unit disposed on the substrate allows the polishing pad to switch between a first shape mode and a second shape mode through deformation. In the first shape mode, the polishing surface of the polishing pad has grooves formed by the substrate and the deformable unit. In the second shape mode, the deformable unit deforms to eliminate the grooves, so that the deformable unit and the substrate are in the same plane, thereby making the entire polishing surface of the polishing pad flat. The deformable unit is configured to perform the following switching during the wafer polishing process: During the initial polishing stage, the polishing pad is positioned in the first shape pattern to allow polishing fluid to flow through the grooves; In the final polishing stage, the polishing pad is switched to the second shape mode to flatten the surface of the polishing pad and improve the surface flatness of the wafer; and When the wafer polishing is complete and it needs to be removed, switch back to the first shape mode to reduce the adhesion of the polishing pad to the wafer.

2. The polishing pad according to claim 1, characterized in that, The polishing pad also includes a support layer, and the substrate and the deformable unit are disposed on the support layer.

3. The polishing pad according to claim 1 or 2, characterized in that, The deformable unit is an inflatable structure, which expands and deforms when filled with gas.

4. The polishing pad according to claim 3, characterized in that, The polishing pad also includes: A gas pipeline, wherein the gas pipeline is connected to the inflatable structure; A gas source, which is used to fill the inflatable structure with gas through the gas pipeline; An air valve is provided on the gas pipeline to control the expansion amount of the inflatable structure.

5. The polishing pad according to claim 1 or 2, characterized in that, The deformable unit is a ventable structure, which contracts and deforms due to the vented gas.

6. The polishing pad according to claim 5, characterized in that, The polishing pad also includes: A vacuum line, which is connected to the ventable structure; A vacuum source, the vacuum source being used to expel gas from the ventable structure through the vacuum line; A vacuum valve is provided on the vacuum line to control the amount of contraction of the ventable structure.

7. The polishing pad according to claim 1 or 2, characterized in that, The deformable unit is composed of multiple deformable modules, each of which can deform independently.

8. The polishing pad according to claim 1 or 2, characterized in that, The grooves are formed in the shape of multiple concentric rings.

9. A final polishing apparatus, characterized in that, The final polishing equipment includes a polishing pad according to any one of claims 1 to 8.

10. The final polishing equipment according to claim 9, characterized in that, The final polishing equipment also includes: A rotary worktable, wherein the polishing pad is disposed on the rotary worktable and rotates together with the rotary worktable; A clamping device for holding a wafer and pressing the held wafer against the polishing pad.

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