Monocrystalline silicon feeding control method and device and storage medium

Abstract

The invention relates to the technical field of monocrystalline silicon production, and discloses a monocrystalline silicon feeding control method and device and a storage medium, and the method comprises the following steps: obtaining the real-time height of the liquid level of a silicon material in a crucible; predicting the liquid level height of the fed silicon material according to the real-time height of the silicon material in the crucible and the predicted silicon material amount; judging whether the predicted liquid level height of the silicon material after feeding exceeds a preset safe liquid level height or not, and if the predicted liquid level height of the silicon material after feeding exceeds the preset safe liquid level height, adjusting a feeding strategy until the predicted liquid level height of the silicon material after feeding does not exceed the safe liquid level height; predicting a predicted time point when the accumulated feeding amount in the crucible reaches a preset maximum capacity of the crucible according to historical relation data of the feeding amount and time; and when the remaining time from the predicted time point is less than a preset warning duration, or the real-time height of the silicon material in the crucible is higher than a preset warning height, giving an alarm to an operator and / or stopping feeding. The method can avoid raw material waste caused by batch feeding amount fluctuation.

Description

Technical Field

[0001] The present invention relates to the technical field of single crystal silicon production, and in particular to a single crystal silicon feeding control method, device and storage medium. Background Art

[0002] In the single crystal silicon growth process, accurate control of the feeding amount is the key to ensuring product quality and production efficiency. In order to ensure accurate control of the feeding amount, in the existing single crystal silicon growth process, manual or semi-automatic feeding devices are often used to feed the crucible in the single crystal furnace in batches. Regardless of whether it is a manual or semi-automatic feeding device, the control accuracy of the feeding amount of each feeding is limited, resulting in fluctuations in the feeding amount of each batch, which cannot be kept consistent, which can easily cause overfeeding, causing silicon material in the crucible to overflow, causing raw material waste and production accidents. For this reason, it is necessary to design a new feeding control method that can avoid overfeeding due to fluctuations in the feeding amount. Summary of the invention

[0003] In order to overcome the deficiencies of the prior art, the object of the present invention is to provide a single crystal silicon feeding control method, which can automatically control the feeding process in the single crystal silicon production process to avoid silicon material overflow in the crucible and cause silicon material waste.

[0004] To solve the above problems, the technical solution adopted by the present invention is as follows: a method for controlling single crystal silicon feeding, comprising:

[0005] Obtaining the real-time height of the liquid level of the silicon material in the crucible;

[0006] Predicting the liquid level of the silicon material after feeding according to the real-time height of the silicon material in the crucible and the estimated amount of silicon material to be fed;

[0007] Determine whether the predicted silicon material liquid level after feeding will exceed the preset safe liquid level. If so, adjust the feeding strategy until the predicted silicon material liquid level after feeding does not exceed the safe liquid level.

[0008] Predicting the estimated time point when the cumulative amount of material in the crucible reaches the preset maximum capacity of the crucible based on the historical relationship data between the amount of material added and time;

[0009] When the remaining time to the estimated time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height, an alarm is given to the operator and / or the feeding is stopped.

[0010] Compared with the prior art, the beneficial effect of the present invention is that before each feeding, the volume of the silicon material fed is calculated according to the feeding amount, and the height change of the liquid level in the crucible after the feeding is melted is predicted and estimated in combination with the size of the crucible, and the feeding strategy is adjusted according to the comparison result of the predicted height and the height of the crucible, so as to avoid the silicon material fed causing the liquid level of the silicon material in the crucible to be higher than the height of the crucible, and avoid the silicon material overflowing the crucible and causing the waste of raw materials. And the estimated time point when the cumulative feeding amount in the crucible reaches the maximum capacity of the preset crucible can be predicted through the historical relationship data of the feeding amount and time, and the feeding is stopped or the operator is alarmed when it is close to the estimated time point, so as to avoid the silicon material in the crucible overflowing the crucible due to the fluctuation of the feeding amount of each batch of feeding, and further avoid the waste of raw materials.

[0011] In the above-mentioned single crystal silicon feeding control method, the step of predicting the silicon material liquid level height after feeding according to the real-time height of the silicon material in the crucible and the estimated amount of silicon material fed includes:

[0012] Calculate the volume of silicon material to be put into this batch based on the estimated amount of silicon material to be put into;

[0013] Calculate the height change of the silicon material in the crucible according to the volume of the silicon material and the diameter of the crucible;

[0014] The liquid level height of the silicon material in the crucible after the addition of the material is calculated according to the height of the silicon material in the crucible and the height change.

[0015] In the above-mentioned single crystal silicon feeding control method, the step of predicting the estimated time point when the cumulative feeding amount in the crucible reaches the preset maximum capacity of the crucible according to the historical relationship data between feeding and time comprises:

[0016] Count the time series of feeding amount in the recent period;

[0017] Fit the time series model with the time series of feed amount in the recent period;

[0018] Use the time series model to predict the feed quantity at each subsequent sampling moment;

[0019] Calculate the predicted cumulative amount of feed at each subsequent feeding moment according to the predicted amount of feed at each subsequent feeding moment;

[0020] The predicted cumulative amount of material added at each subsequent moment is compared with the maximum capacity of the crucible, and the estimated time point when the cumulative amount of material added in the crucible reaches the preset maximum capacity of the crucible is estimated.

[0021] In the above-mentioned single crystal silicon feeding control method, in the step of fitting a time series model with the historical relationship data between the feeding amount and time, the time series model is an ARI MA model.

[0022] A storage medium stores a computer program, and when the computer program is called and executed by a processor, the above-mentioned single crystal silicon feeding control method is implemented.

[0023] A single crystal silicon feeding control device comprises a processor and a memory, wherein the processor and the memory are electrically connected, and the processor can call and execute a computer program in the memory to implement the above-mentioned single crystal silicon feeding control method.

[0024] A single crystal silicon feeding control device comprises: an acquisition module for acquiring the real-time height of the liquid level of silicon material in a crucible, a time series of the feeding amount in a recent period, and an estimated amount of silicon material to be fed; a liquid level prediction module for predicting the liquid level of the silicon material in the crucible after feeding according to the estimated amount of silicon material to be fed; a feeding amount prediction module for predicting the feeding amount at each subsequent feeding moment according to the time series of the feeding amount in a recent period, and predicting the estimated time point when the accumulated feeding amount in the crucible reaches a preset maximum capacity of the crucible according to the predicted feeding amount at each subsequent feeding moment; a feeding control module for controlling the feeding speed according to the predicted liquid level of the silicon material in the crucible after feeding, so that the predicted liquid level of the silicon material in the crucible after feeding does not exceed a safe liquid level; and an early warning module for alarming an operator and / or stopping feeding when the remaining time to the estimated time point is less than a preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height.

[0025] The above-mentioned single crystal silicon feeding control device, the feeding amount prediction module includes: a time series fitting module, which is used to fit the time series model according to the time series of the feeding amount in the most recent period; a time series prediction module, which is used to predict the feeding amount at each subsequent feeding moment through the time series model, and predict the estimated time point when the cumulative feeding amount in the crucible reaches the preset maximum capacity of the crucible based on the predicted feeding amount at each subsequent feeding moment.

[0026] The above-mentioned single crystal silicon feeding control device, the early warning module includes: a stopping module, which is used to control the feeding device to gradually stop or immediately stop feeding when the remaining time to the expected time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height; a notification recording module, which is used to send an emergency notification to relevant personnel through communication software to report the feeding stop situation and reasons, and record detailed information of the feeding stop when the remaining time to the expected time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height.

[0027] A single crystal silicon feeding control system comprises: the above-mentioned single crystal silicon feeding control device; a feeding device, used to add silicon material to a crucible in the single crystal silicon, and electrically connected to the single crystal silicon feeding control device; a material monitoring sensor, electrically connected to the single crystal silicon feeding control device, and used to detect the amount of silicon material in the crucible.

[0028] The present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is a flow chart of a method for controlling single crystal silicon feeding according to an embodiment of the present invention;

[0030] Figure 2 A flowchart of a prediction process of an estimated time point according to an embodiment of the present invention;

[0031] Figure 3 The schematic diagram of the monocrystalline silicon feeding control system according to the embodiment of the present invention is shown in FIG. DETAILED DESCRIPTION

[0032] The embodiments of the present invention are described in detail below. Figure 1 The embodiment of the present invention provides a method for controlling feeding of single crystal silicon, comprising the following steps:

[0033] Obtaining the real-time height of the liquid level of the silicon material in the crucible;

[0034] Predicting the liquid level of the silicon material after feeding according to the real-time height of the silicon material in the crucible and the estimated amount of silicon material to be fed;

[0035] Determine whether the predicted silicon material liquid level after feeding will exceed the preset safe liquid level. If so, adjust the feeding strategy until the predicted silicon material liquid level after feeding does not exceed the safe liquid level.

[0036] Predicting the estimated time point when the cumulative amount of material in the crucible reaches the preset maximum capacity of the crucible based on the historical relationship data between the amount of material added and time;

[0037] When the remaining time to the estimated time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height, an alarm is given to the operator and / or the feeding is stopped.

[0038] The monocrystalline silicon feeding control method of the embodiment of the present invention calculates the volume of the feeding amount according to the expected feeding amount before feeding, and predicts the change of the liquid level of the crucible after feeding according to the volume of the feeding and the size of the crucible, so as to avoid the silicon material fed causing the liquid level in the crucible to be higher than the height of the crucible, thereby avoiding the waste of raw materials. At the same time, the method also predicts the expected time point when the next feeding amount reaches the maximum capacity of the preset crucible based on the historical relationship data of the feeding amount and time over a period of time, and alarms the operator and / or stops feeding when approaching the expected time point, thereby avoiding the fluctuation of each feeding amount during batch feeding, which causes the silicon material in the crucible to overflow after the feeding is completed according to the expected feeding strategy, further avoiding the waste of raw materials.

[0039] It is understandable that in some embodiments, if the predicted silicon material liquid level after feeding will exceed the preset safe liquid level, the liquid level in the crucible after feeding can be prevented from being higher than the height of the crucible by reducing the opening of the valve of the feeding device or delaying the next feeding time.

[0040] In this embodiment, specifically, during the feeding process, it is necessary to ensure that the liquid level in the crucible always meets the following two constraints: 1. At any time during the feeding process, the liquid level in the crucible does not exceed the set safety height H_max; 2. The liquid level after the silicon material is completely melted cannot exceed H_max. In order to ensure that the above two constraints can be met after feeding, it is required that the height change when the feeding amount is added and the height change after melting will not make the liquid level in the crucible higher than the safety height H_max. The height of H_max is set according to the actual height of the crucible, and should be slightly lower than the actual height of the crucible. Since the solid phase density of the silicon material is less than the liquid phase density, it is only necessary to ensure that the height change caused by the volume of the silicon material when it is added will not cause the liquid level in the crucible to exceed H_max. The specific steps include:

[0041] The volume of silicon material in this batch is calculated based on the expected amount of silicon material to be input: ΔV = M_batch / ρ, where ΔV is the volume of this batch of silicon material, M_batch is the weight of the silicon material input in this single batch, and ρ is the solid density of silicon, which is usually 2330 kg / m 3 ;

[0042] Calculate the height change of the silicon material in the crucible based on the volume of the silicon material and the diameter of the crucible: Δh = ΔV / π(D / 2) 2 , where Δh is the height change and D is the diameter of the crucible;

[0043] The liquid level of the silicon material in the crucible after feeding is calculated based on the height of the silicon material in the crucible and the height change: h_new = h_current + Δh, where h_new is the liquid level of the silicon material in the crucible after feeding, and h_current is the current liquid level. If h_new exceeds H_max, the feeding strategy needs to be adjusted to avoid overflow of the silicon material in the crucible.

[0044] Before each feeding, h_current needs to be updated, and the melting of the silicon material needs to be taken into account during the update, that is, the melting amount of the silicon material is calculated according to the melting rate of the silicon material, and the liquid level in the crucible is updated according to the melting amount. In order to simplify the processing process, the melting process of the silicon material is regarded as uniform melting. h_current can also be obtained by directly measuring the liquid level in the crucible through ranging sensors such as laser sensors or ultrasonic sensors. After all the silicon materials are put in, it is also necessary to calculate whether the liquid level after all the silicon materials are melted meets constraint condition 2 to further avoid waste of raw materials.

[0045] It is understandable that the historical feeding data can be fitted through a time series model, and the feeding amount per minute can be predicted through the fitted model to simulate the fluctuation law in the feeding process and avoid the overflow of silicon material in the crucible due to the accumulation of fluctuation errors of each batch of silicon material.

[0046] In this embodiment, the ARI MA model is used to predict the feeding amount for each subsequent feeding. The time series of the feeding amount in the last hour is collected at a frequency of recording the feeding amount every minute to obtain the time series of the feeding amount in the last hour. Subsequently, the time series of the feeding amount in the last hour is input into the ARI MA model for fitting, and the ARI MA model after fitting is used to predict the feeding amount in the next half hour, and the cumulative feeding amount at each feeding moment is calculated in combination with the amount of silicon material in the current crucible, and the cumulative feeding amount is compared with the maximum safe capacity of the crucible, and the estimated time point when the cumulative feeding amount in the crucible reaches 95% of the maximum capacity of the crucible is calculated, where the maximum safe capacity is usually set to 95% to 97% of the actual maximum capacity of the crucible. When the time point is close to the estimated time point, an alarm message is sent to relevant personnel through sound and light alarms or corporate communication means such as emails, WeChat or DingTalk messages to remind the operator to pay attention to the feeding process or directly take over the feeding control, manually control the feeding, and avoid excessive feeding causing silicon material to overflow from the crucible. Or when the time point is close to the expected time point, the preset stop feeding process is directly started to gradually reduce the feeding amount or directly stop feeding.

[0047] It is understandable that before inputting the time series of the feeding amount in the last hour into the ARI MA model, it is necessary to detect whether the time series is stable. If it is not stable, the feeding amount needs to be differentially processed until the data is stable. After each feeding, the time series needs to be updated according to the actual feeding amount, so that the ARI MA model re-fits the updated time series, and uses the updated ARI MA model to re-predict the estimated time point for filling the crucible.

[0048] Based on the same inventive concept, an embodiment of the present invention further provides a computer-readable storage medium, in which a computer program is stored. When the computer program is executed by a processor, the above-mentioned single crystal silicon feeding control method can be implemented.

[0049] In some possible embodiments, various aspects of the single crystal silicon feeding control method provided by the present invention can also be implemented in the form of a program product, which includes a program code. When the program product is run on an apparatus, the program code is used to enable the control device to execute the steps of the single crystal silicon feeding control method according to various exemplary embodiments of the present application described above in this specification.

[0050] Based on the same inventive concept, an embodiment of the present invention also provides a control device for implementing the above-mentioned single crystal silicon feeding control method, including a processor and a memory, the memory is electrically connected to the processor, and the processor is used to execute the computer program stored in the memory to implement the above-mentioned single crystal silicon feeding control method.

[0051] In one possible design, the processor may include one or more processing units, and the processor and memory may be implemented on the same chip or on separate chips. The processor may be a general-purpose processor, such as a central processing unit (CPU), a digital signal processor, an application-specific integrated circuit, a field programmable gate array or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component, and may implement or execute the various methods, steps, and logic block diagrams disclosed in the embodiments of the present application. The general-purpose processor may be a microprocessor or any conventional processor, etc. The steps of the monocrystalline silicon feeding control method disclosed in the embodiments of the present application may be directly embodied as being executed by a hardware processor, or may be executed by a combination of hardware and software modules in the processor.

[0052] As a non-volatile computer-readable storage medium, the memory can be used to store non-volatile software programs, non-volatile computer executable programs and modules. The memory can include at least one type of storage medium, for example, it can include flash memory, hard disk, multimedia card, card-type memory, random access memory (Random Access Memory, RAM), static random access memory (Static RandomAccess Memory, SRAM), programmable read-only memory (Programmable Read Only Memory, PROM), read-only memory (Read Only Memory, ROM), electrically erasable programmable read-only memory (Electrically Erasable Programmable Read-Only Memory, EEPROM), magnetic memory, disk, CD, etc. The memory is any other medium that can be used to carry or store the desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto. The memory in the embodiment of the present application can also be a circuit or any other device that can realize a storage function, for storing program instructions and / or data.

[0053] By designing and programming the processor, the code corresponding to the single crystal silicon feeding control method described in the above embodiment can be fixed into the chip, so that the chip can execute the steps of the single crystal silicon feeding control method of the embodiment shown in the present invention when running. How to design and program the processor is a technology well known to those skilled in the art and will not be described in detail here.

[0054] Based on the same inventive concept, an embodiment of the present invention also provides another single crystal silicon feeding control device, including an acquisition module, a liquid level prediction module, a feeding amount prediction module, a feeding control module and an early warning module. The acquisition module is used to obtain the real-time height of the liquid level of the silicon material in the crucible, the time series of the feeding amount in the recent period, and the estimated amount of silicon material to be fed. The liquid level prediction module is used to predict the liquid level of the silicon material in the crucible after feeding according to the estimated amount of silicon material to be fed. The feeding amount prediction module is used to predict the feeding amount at each subsequent feeding moment according to the time series of the feeding amount in the recent period, and predict the estimated time point when the cumulative feeding amount in the crucible reaches the preset maximum capacity of the crucible according to the predicted feeding amount at each subsequent feeding moment. The feeding control module is used to control the feeding speed according to the predicted liquid level of the silicon material in the crucible after feeding, so that the predicted liquid level of the silicon material in the crucible after feeding does not exceed the safe liquid level. The early warning module is used to warn the operator and / or stop feeding when the remaining time to the expected time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height.

[0055] In this embodiment, the feeding amount prediction module includes a time series fitting module and a time series prediction module. The time series fitting module is used to fit the time series model according to the time series of the feeding amount in the recent period. The time series prediction module is used to predict the feeding amount of each subsequent feeding moment through the time series model, and predict the estimated time point when the cumulative feeding amount in the crucible reaches the preset maximum capacity of the crucible according to the predicted feeding amount of each subsequent feeding moment. The early warning module includes a stop feeding module and a notification recording module. The stop feeding module is used to control the feeding device to gradually stop or immediately stop feeding when the remaining time from the estimated time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height. The notification recording module is used to send an emergency notification to relevant personnel through the communication software when the remaining time from the estimated time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height, reporting the feeding stop situation and reasons, and recording the detailed information of the feeding stop, wherein the detailed information includes the time, stop situation and reasons of the feeding stop, etc., for subsequent analysis and optimization.

[0056] In this embodiment, the single crystal silicon feeding control device also includes a manual control module for manually controlling the feeding device, so that after the operator receives a notification or the feeding device automatically stops feeding, the operator can manually intervene to control or restart the feeding process, thereby increasing the flexibility and controllability of the feeding control.

[0057] Based on the same inventive concept, an embodiment of the present invention also provides a single crystal silicon feeding control system, including the above-mentioned single crystal silicon feeding control device, a feeding device and a material monitoring sensor, and the material monitoring sensor and the feeding device are electrically connected to the single crystal silicon feeding control device. The feeding device is used to add silicon material to the crucible in the single crystal silicon under the control of the single crystal silicon feeding control system, and the material monitoring sensor is used to detect the amount of silicon material in the crucible, and feed back the detected amount of silicon material to the single crystal silicon feeding control device. It can be understood that the material monitoring sensor may include a weight sensor and a liquid level sensor, the weight sensor is arranged in the crucible to detect the weight of the silicon material in the crucible, and the liquid level sensor is arranged above the crucible, which can be an ultrasonic sensor or a laser ranging sensor, which is used to measure the liquid level of the silicon material in the crucible.

[0058] The present application is described with reference to the flowcharts and / or block diagrams of the methods, apparatus (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0059] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0060] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0061] It should be noted that in the description of the present invention, if there are any orientation descriptions, such as up, down, front, back, left, right, etc., the orientations or positional relationships indicated are all based on the orientations or positional relationships shown in the drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed or operated in a specific orientation, and cannot be understood as a limitation on the present invention.

[0062] In the description of the present invention, "several" means one or more, "more" means two or more, "greater than", "less than", "exceed" etc. are understood to exclude the number itself, and "above", "below", "within" etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used to distinguish the technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0063] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0064] The above-mentioned embodiments are only preferred embodiments of the present invention and cannot be used to limit the scope of protection of the present invention. Any non-substantial changes and substitutions made by technicians in this field on the basis of the present invention shall fall within the scope of protection required by the present invention.

Claims

1. A method for controlling single crystal silicon feeding, characterized in that: The steps include: Obtaining the real-time height of the liquid level of the silicon material in the crucible; Predicting the liquid level of the silicon material after feeding according to the real-time height of the silicon material in the crucible and the estimated amount of silicon material to be fed; Determine whether the predicted silicon material liquid level after feeding will exceed the preset safe liquid level. If it will exceed the safe liquid level, adjust the feeding strategy until the predicted silicon material liquid level after feeding does not exceed the safe liquid level. Predicting the estimated time point when the cumulative amount of material in the crucible reaches the preset maximum capacity of the crucible based on the historical relationship data between the amount of material added and time; When the remaining time to the estimated time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height, an alarm is given to the operator and / or the feeding is stopped.

2. The method for controlling single crystal silicon feeding according to claim 1, characterized in that: The step of predicting the liquid level height of the silicon material after feeding according to the real-time height of the silicon material in the crucible and the estimated amount of silicon material fed includes: Calculate the volume of silicon material to be put into this batch based on the estimated amount of silicon material to be put into; Calculate the height change of the silicon material in the crucible according to the volume of the silicon material and the diameter of the crucible; The liquid level height of the silicon material in the crucible after the addition of the material is calculated according to the height of the silicon material in the crucible and the height change.

3. The method for controlling single crystal silicon feeding according to claim 1, characterized in that: The step of predicting the estimated time point when the cumulative amount of material added to the crucible reaches the preset maximum capacity of the crucible according to the historical relationship data between material addition and time comprises: Count the time series of feeding amount in the recent period; Fit the time series model with the time series of feed amount in the recent period; Use the time series model to predict the feed quantity at each subsequent sampling moment; Calculate the predicted cumulative amount of feed at each subsequent feeding moment according to the predicted amount of feed at each subsequent feeding moment; The predicted cumulative amount of material added at each subsequent moment is compared with the maximum capacity of the crucible, and the estimated time point when the cumulative amount of material added in the crucible reaches the preset maximum capacity of the crucible is estimated.

4. The method for controlling single crystal silicon feeding according to claim 3, characterized in that: In the step of fitting a time series model with historical data of the relationship between feed amount and time, the time series model is an ARIMA model.

5. A storage medium storing a computer program, characterized in that: When the computer program is called and executed by the processor, the single crystal silicon feeding control method according to any one of claims 1 to 4 is implemented.

6. A single crystal silicon feeding control device, characterized in that: It comprises a processor and a memory, the processor and the memory are electrically connected, and the processor can call and execute a computer program in the memory to implement the single crystal silicon feeding control method according to any one of claims 1 to 4.

7. A single crystal silicon feeding control device, characterized in that: include: An acquisition module is used to obtain the real-time height of the liquid level of the silicon material in the crucible, the time series of the amount of material added in the recent period, and the estimated amount of silicon material added; A liquid level prediction module is used to predict the liquid level of the silicon material in the crucible after the silicon material is added according to the expected amount of silicon material to be added; A feeding amount prediction module is used to predict the feeding amount at each subsequent feeding moment according to the time series of the feeding amount in the most recent period, and to predict the estimated time point when the cumulative feeding amount in the crucible reaches the preset maximum capacity of the crucible according to the predicted feeding amount at each subsequent feeding moment; A feeding control module, used to control the feeding speed according to the predicted liquid level height of the silicon material in the crucible after feeding, so that the predicted liquid level height of the silicon material in the crucible after feeding does not exceed the safe liquid level height; The early warning module is used to warn the operator and / or stop feeding when the remaining time to the expected time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height.

8. The single crystal silicon feeding control device according to claim 7, characterized in that: The feed amount prediction module comprises: The time series fitting module is used to fit the time series model according to the time series of the feeding amount in the recent period; The time series prediction module is used to predict the feeding amount at each subsequent feeding moment through a time series model, and to predict the estimated time point when the cumulative feeding amount in the crucible reaches the preset maximum capacity of the crucible based on the predicted feeding amount at each subsequent feeding moment.

9. The single crystal silicon feeding control device according to claim 7, characterized in that: The early warning module comprises: A material stopping module is used to control the feeding device to gradually stop or immediately stop feeding when the remaining time to the expected time point is less than a preset warning time, or the real-time height of the silicon material in the crucible is higher than a preset warning height; The notification recording module is used to send an emergency notification to relevant personnel through the communication software to report the feeding stop situation and reasons, and record the detailed information of the feeding stop when the remaining time to the expected time point is less than the preset warning time, or the real-time height of the silicon material in the crucible is higher than the preset warning height.

10. A single crystal silicon feeding control system, characterized in that: include: The single crystal silicon feeding control device according to any one of claims 6 to 9; A feeding device, used for adding silicon material to the crucible in the single crystal silicon, and electrically connected to the single crystal silicon feeding control device; The material monitoring sensor is electrically connected to the single crystal silicon feeding control device and is used to detect the amount of silicon material in the crucible.

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