Semiconductor light emitting device for display pixel and display apparatus including same

Abstract

Embodiments relate to a semiconductor light emitting device for a display pixel and a display apparatus including the same. A semiconductor light emitting device for a display pixel according to an embodiment may include: a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a passivation layer disposed on the light emitting structure; and a second electrode layer disposed below the light emitting structure. The light emitting structure may include an arc-shaped semiconductor layer of which a part of a top surface is arc-shaped.

Description

Technical Field

[0001] Embodiments relate to a semiconductor light emitting device for a display pixel and a display apparatus including the semiconductor light emitting device. Background Art

[0002] Large-area displays include liquid crystal displays (LCDs), OLED (organic light-emitting diode) displays, and micro-LED displays (Micro-LED displays).

[0003] The micro LED display is a display using a semiconductor light emitting device, ie, micro LED, having a diameter or a cross-sectional area of ​​100 μm or less as a display device.

[0004] Micro LED displays use micro LEDs, which are semiconductor light-emitting devices, as display devices, so they have excellent performance in many characteristics such as light-to-dark ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency or brightness.

[0005] In particular, the micro-LED display can separate and combine screens in a modular manner, thereby having the advantages of free adjustment of size or resolution and the ability to achieve a flexible display.

[0006] However, a large-scale micro-LED display requires more than several million micro-LEDs, and thus there is a technical problem that it is difficult to quickly and accurately transfer the micro-LEDs to the display panel.

[0007] Recently developed transfer technologies include pick and place process, laser lift-off method or self-assembly method.

[0008] Among them, the self-assembly method, as a method for semiconductor light-emitting devices to find assembly positions in a fluid by themselves, is a method that is conducive to realizing large-screen display devices.

[0009] Recently, a micro-LED structure suitable for self-assembly was proposed in US Patent No. 9,825,202, but research on technology for manufacturing displays by self-assembly of micro-LEDs is not yet complete.

[0010] In particular, in the prior art, when rapidly transferring millions of semiconductor light-emitting devices to a large display, although the transfer speed can be increased, the transfer error rate may increase, thereby causing a technical problem of lowering the transfer yield.

[0011] On the other hand, in the related art, although a transfer process using a self-assembly method using dielectrophoresis (DEP) has been attempted, there is a problem of low self-assembly rate due to the non-uniformity of the dielectrophoresis force (DEP force).

[0012] On the other hand, the internal technology of the self-assembly method using dielectrophoretic force (DEP force) includes the steps of using the magnetic force of a magnet to first move the LED chip to the assembly hole area and applying alternating current to the assembly wiring and using dielectrophoretic force (DEP force) to assemble the LED chip into the assembly hole.

[0013] However, since the upper and lower sides of the LED chip are formed by an n-type semiconductor layer and a p-type semiconductor layer, and are respectively provided with an n-type electrode and a p-type electrode, it is very important to assemble the LED chip into the assembly hole while maintaining the vertical directionality of the LED chip. This is because if the LED chip is assembled in a state where the direction is tilted or even rotated 180 degrees in the opposite direction, electrical disconnection may occur in the subsequent wiring process.

[0014] However, internal research has shown that directionally controlling LED chips during the self-assembly process while moving within a fluid is a challenge and an important solution is needed.

[0015] In addition, in the related art, there is a problem that the electrical contact characteristics between the electrodes of the self-assembled LED chip and the panel electrodes are degraded and the lighting rate is reduced. Summary of the invention

[0016] Problems to be solved by the invention

[0017] One of the technical problems of the embodiment is to solve the problem of low self-assembly rate caused by non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP).

[0018] In addition, one of the technical problems of the embodiment is to solve the problem that it is difficult to control the orientation of LED chips in the self-assembly method using dielectrophoresis (DEP).

[0019] In addition, one of the technical problems of the embodiment is to solve the problem that the lighting rate decreases due to the decrease in electrical contact characteristics between the electrodes of the self-assembled LED chip and the predetermined panel electrodes.

[0020] The technical problems of the embodiments are not limited to the technical problems described in the present invention, but also include technical problems that can be grasped through the entire specification.

[0021] Technical solutions to the problem

[0022] The semiconductor light-emitting device for display pixels of the embodiment may include: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a passivation layer arranged on the light-emitting structure; and a second electrode layer arranged below the light-emitting structure.

[0023] The light emitting structure may include an arc-shaped semiconductor layer, a portion of a top surface of which is arc-shaped.

[0024] The light emitting structure may include a curved semiconductor layer having a curved side surface at a portion of an upper portion of the first conductive semiconductor layer.

[0025] The light emitting structure may include an arc-shaped semiconductor layer in which a portion of the side surface and a portion of the top surface of an upper portion of the first conductive type semiconductor layer are arc-shaped.

[0026] The light emitting structure may further include a protruding semiconductor layer extending in horizontal directions on both sides further than side surfaces of the arc-shaped semiconductor layer.

[0027] The protruding semiconductor layer may include the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer.

[0028] The active layer may be formed to have a horizontal width corresponding to a maximum horizontal width of the light emitting structure.

[0029] The second electrode layer may include a light-transmitting electrode layer disposed on the light-emitting structure.

[0030] The second electrode layer may include a reflective layer disposed on the light-transmitting electrode layer, a magnetic layer disposed on the reflective layer, and an adhesive layer disposed on the magnetic layer.

[0031] A horizontal width of the protruding semiconductor layer may be the same as a horizontal width of the second electrode layer.

[0032] The surface of the light-transmitting electrode layer may be a hydrophilic surface.

[0033] The light-transmitting electrode layer may be treated with O 2 plasma or Ar plasma.

[0034] In addition, the display device including the semiconductor light emitting device of the embodiment may include any of the above-mentioned semiconductor light emitting devices for display pixels.

[0035] Effects of the Invention

[0036] According to the semiconductor light emitting device of the embodiment and the display device including the semiconductor light emitting device, in the self-assembly step, the lower semiconductor layer and the lower electrode of the LED chip can be formed to be wider than the upper semiconductor layer. Thus, according to the embodiment, a relatively large dielectrophoretic force (DEP force) is formed on the lower electrode plate side, thereby having a technical effect of being able to correctly assemble the LED chip by controlling the assembly direction.

[0037] For example, according to an embodiment, the semiconductor light emitting device has a protruding semiconductor layer 110P, and a larger dielectric electrophoresis force (DEP force) is applied to the protruding semiconductor layer 110P, thereby having a special technical effect of being able to control the direction of the second conductive semiconductor layer 113 along the directions of multiple assembly electrodes 310 and 320.

[0038] In addition, for example, in the semiconductor light emitting device 100 of the embodiment, the horizontal width of the second electrode layer 130 can be formed to be larger to correspond to the horizontal width of the protruding semiconductor layer 110P. Thus, according to the display device of the embodiment, in the self-assembly step, the lower semiconductor layer of the LED chip and the second electrode layer 130 as the lower electrode can be formed to be wider than the upper semiconductor layer. Therefore, according to the embodiment, the dielectrophoretic force (DEP force) is relatively large on the side of the second electrode layer 130 as the lower electrode plate, thereby having a special technical effect of being able to correctly assemble the LED chip by controlling the assembly direction.

[0039] In addition, according to the embodiment, the light extraction efficiency is improved by preventing total reflection of light emitted by the dome-shaped upper semiconductor layer after self-assembly, and in addition, due to the wide lower electrode plate, the electrical contact area in the display panel end is increased, thereby having a composite technical effect of improving electrical characteristics.

[0040] For example, since the semiconductor light emitting device of the embodiment includes a dome-shaped arcuate semiconductor layer 110R, the light extraction efficiency is improved by preventing total reflection of light emitted by the dome-shaped upper arcuate semiconductor layer 110R after self-assembly. In addition, since the second electrode layer 130 serves as a wide lower electrode plate, the electrical contact area at the display panel end is increased, thereby having a composite technical effect of improving electrical characteristics.

[0041] In addition, since the semiconductor light-emitting device of the embodiment includes a dome-shaped arc-shaped semiconductor layer 110R, the active layer 112 exists in a region where the horizontal width of the active layer 112 corresponds to the horizontal width of the protruding semiconductor layer 110P which is the maximum horizontal width of the semiconductor light-emitting device, and the entire chip size can become the light-emitting area. As a result, the light-emitting area is wider than that of existing chips, thereby significantly improving the light efficiency.

[0042] In addition, according to the embodiment, during the self-assembly process, even if the arc-shaped semiconductor layer 110R is positioned toward the assembly electrode to the assembly hole 340H, since the area corresponding to the assembly electrode is small and the influence of the electric field is weak, it will directly detach even if it enters the assembly hole, thereby preventing poor assembly.

[0043] In addition, in the embodiment, the friction between the semiconductor light emitting device having the arc-shaped semiconductor layer 110R and the assembly substrate is small, so the moving speed of the light emitting device chip is very fast, thereby being able to increase the assembly speed.

[0044] In addition, according to the embodiment, there is a technical effect that the problem of low self-assembly rate due to non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP) can be solved.

[0045] For example, in the embodiment, since the light-transmitting electrode disposed on the light-emitting device chip has a dielectric constant and thus functions as a dielectric film, it has a unique special technical effect of being able to improve the assembly rate by improving the dielectrophoretic force (DEP force).

[0046] In addition, the light-emitting device used in the embodiment has a translucent electrode layer, so that the lower electrode layer has a flat surface characteristic, so that the dielectrophoretic force (DEP force) acts evenly on the lower part of the light-emitting device chip, thereby having the technical effect of significantly improving the correct assembly rate of the light-emitting device chip in the assembly hole.

[0047] In addition, according to the embodiment, there is a technical effect that it is possible to solve the problem that the lighting rate is reduced due to the reduction in electrical contact characteristics between the electrodes of the self-assembled light-emitting device and the prescribed panel electrodes.

[0048] For example, according to the embodiment, a light-transmitting electrode layer is formed between the epitaxial layer (GaN) of the semiconductor light-emitting device (chip) and the lower bonding metal, thereby having a technical effect of significantly improving the surface morphology of the back bonding metal. Thus, according to the embodiment, there is a technical effect of solving the problem of poor lighting by significantly improving the contact characteristics between the back metal of the light-emitting device and the panel wiring.

[0049] The technical effects of the embodiments are not limited to the technical effects described in the content of the present invention, and include the technical effects that can be grasped through the entire specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 FIG. 1 is a diagram showing an example of a living room of a house in which a display device is arranged according to an embodiment.

[0051] Figure 2This is a block diagram schematically showing a display device according to the embodiment.

[0052] Figure 3 It is shown Figure 2 A circuit diagram of an example of a pixel.

[0053] Figure 4 yes Figure 1 An enlarged view of the first panel area in the display device.

[0054] Figure 5 is along Figure 4 A cross-sectional view of the A2 region taken along line B1-B2.

[0055] Figure 6 2 is an exemplary diagram of assembling a light emitting device onto a substrate by a self-assembly method according to an embodiment of the present invention.

[0056] Figures 7a to 7d Here are photos of the internal technology associated with the display panel.

[0057] Figure 8 is a cross-sectional view of a display device according to an embodiment.

[0058] Figure 8 is a cross-sectional view of the display device 300 according to the first embodiment.

[0059] Fig. 9 is a cross-sectional view of the first semiconductor light emitting device 100 in the display device of the first embodiment.

[0060] Fig.10 is a cross-sectional view of a display device 302 according to the second embodiment.

[0061] Fig.11 is a cross-sectional view of a second semiconductor light emitting device 102 in the display device of the second embodiment.

[0062] Fig.12a and Figure 12b This is the data of the micro LED display of the second embodiment. DETAILED DESCRIPTION

[0063] Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the sake of ease of writing the specification, and they themselves do not have meanings or functions that distinguish each other. In addition, the accompanying drawings are used to make the embodiments disclosed in this specification easy to understand, and the technical ideas disclosed in this specification are not limited by the accompanying drawings. In addition, when it is mentioned that an element such as a layer, a region or a substrate exists "on" another constituent element, it should be understood that it can exist directly on another element, or there can be other intermediate elements between them.

[0064] The display device described in this specification may include a digital TV, a mobile phone, a smart phone, a laptop computer, a digital broadcast terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigator, a touch-screen tablet PC (Slate PC), a tablet PC (Tablet PC), an Ultrabook, a desktop computer, etc. However, it will be easily understood by those skilled in the art that the configuration of the embodiments described in this specification may also be applied to a device capable of displaying even in the form of a new product developed later.

[0065] Hereinafter, a light emitting device according to an embodiment and a display device including the semiconductor light emitting device will be described.

[0066] Figure 1 The living room of a house in which the display device 100 of the embodiment is arranged is shown.

[0067] The display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a sweeping robot 102, and an air purifier 103, can communicate with each electronic product based on IOT (Internet of Things), and can also control each electronic product based on user setting data.

[0068] The display device 100 of the embodiment may include a flexible display manufactured on a thin and soft substrate. The flexible display maintains the characteristics of an existing flat panel display and can be bent or rolled like paper.

[0069] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels configured in a matrix form. A unit pixel refers to the smallest unit for realizing a color. The unit pixel of a flexible display can be realized by a light-emitting device. In an embodiment, the light-emitting device can be a Micro-LED or a Nano-LED, but is not limited thereto.

[0070] Figure 2 is a block diagram schematically showing a display device of an embodiment, Figure 3 It is shown Figure 2 A circuit diagram of an example of a pixel.

[0071] Reference Figure 2 and Figure 3 The display device of the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 , and a power supply circuit 50 .

[0072] The display device 100 of the embodiment may drive the light emitting devices in an active matrix (AM) manner or a passive matrix (PM) manner.

[0073] The driving circuit 20 may include a data driving section 21 and a timing control section 22 .

[0074] The display panel 10 can be divided into a display area DA and a non-display area NDA arranged around the display area DA. The display area DA is an area for displaying an image by forming a plurality of pixels PX. The display panel 10 may include a plurality of data lines D1 to Dm (m is an integer greater than or equal to 2), a plurality of scan lines S1 to Sn (n is an integer greater than or equal to 2) intersecting the plurality of data lines D1 to Dm, a high potential voltage line for supplying a high potential voltage, a low potential voltage line for supplying a low potential voltage, and a plurality of pixels PX connected to the plurality of data lines D1 to Dm and the plurality of scan lines S1 to Sn.

[0075] Each pixel PX of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light of a first wavelength, the second sub-pixel PX2 may emit a second color light of a second wavelength, and the third sub-pixel PX3 may emit a third color light of a third wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but is not limited thereto. In addition, Figure 2 exemplarily, each of the plurality of pixels PX includes three sub-pixels, but the present invention is not limited thereto. That is, each of the plurality of pixels PX may include more than four sub-pixels.

[0076] The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may be respectively connected to at least one of the plurality of data lines D1-Dm, at least one of the plurality of scan lines S1-Sn, and a high potential voltage line. Figure 3 As shown, the first subpixel PX1 may include a plurality of light emitting devices LD, a plurality of transistors for supplying current to the plurality of light emitting devices LD, and at least one capacitor Cst.

[0077] Although not shown, each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include only one light emitting device LD and at least one capacitor Cst.

[0078] Each of the plurality of light emitting devices LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers and a second electrode. Here, the first electrode may be an anode electrode and the second electrode may be a cathode electrode, but is not limited thereto.

[0079] Reference Figure 3 , the plurality of transistors may include: a driving transistor DT, supplying current to the plurality of light emitting devices LD; and a scanning transistor ST, supplying a data voltage to a gate electrode of the driving transistor DT. The driving transistor DT may include: a gate electrode connected to a source electrode of the scanning transistor ST; a source electrode connected to a high potential voltage line to which a high potential voltage is applied; and a drain electrode connected to a plurality of first electrodes of the plurality of light emitting devices LD. The scanning transistor ST may include a gate electrode connected to a scanning line Sk (k is an integer satisfying 1≤k≤n), a source electrode connected to the gate electrode of the driving transistor DT, and a drain electrode connected to a data line Dj (j is an integer satisfying 1≤j≤m).

[0080] The capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT. The storage capacitor Cst may charge a difference between the gate voltage and the source voltage of the driving transistor DT.

[0081] The driving transistor DT and the scanning transistor ST may be formed by thin film transistors. Figure 3 In the embodiment, the driving transistor DT and the scanning transistor ST are described with the case where the driving transistor DT and the scanning transistor ST are formed by P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto. The driving transistor DT and the scanning transistor ST may also be formed by N-type MOSFET. In this case, the positions of the source electrode and the drain electrode of each of the driving transistor DT and the scanning transistor ST may be changed.

[0082] In addition, Figure 3 In the embodiment, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 is illustrated as including a 2T1C (2Transistor-1capacitor: two transistors and one capacitor) having a driving transistor DT, a scanning transistor ST, and a capacitor Cst, but the present invention is not limited thereto. Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0083] Refer again Figure 2The driving circuit 20 outputs a plurality of signals and a plurality of voltages for driving the display panel 10. To this end, the driving circuit 20 may include a data driving part 21 and a timing control part 22.

[0084] The data driving part 21 receives the digital video data DATA and the source control signal DCS from the timing control part 22. The data driving part 21 converts the digital video data DATA into analog data voltages according to the source control signal DCS and supplies the analog data voltages to the plurality of data lines D1Dm of the display panel 10.

[0085] The timing control unit 22 receives digital video data DATA and a plurality of timing signals from a host system. The plurality of timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system may be an application processor of a smartphone or a tablet PC, a monitor, a system on a chip of a TV, etc.

[0086] The scan driving unit 30 receives a scan control signal SCS from the timing control unit 22. The scan driving unit 30 generates a plurality of scan signals according to the scan control signal SCS and supplies the scan signals to the plurality of scan lines S1 to Sn of the display panel 10. The scan driving unit 30 includes a plurality of transistors and may be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving unit 30 may be formed by an integrated circuit, in which case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0087] The power supply circuit 50 generates a high potential voltage VDD and a low potential voltage VSS for driving the plurality of light emitting devices LD of the display panel 10 from a main power source and can supply them to the high potential voltage line and the low potential voltage line of the display panel 10. In addition, the power supply circuit 50 can generate and supply a driving voltage for driving the driving circuit 20 and the scanning driving part 30 from the main power source.

[0088] Figure 4 yes Figure 1 An enlarged view of the first panel area A1 in the display device.

[0089] according to Figure 4 The display device 100 of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel areas such as the first panel area A1 through tiling.

[0090] The first panel area A1 may include each unit pixel ( Figure 2 A plurality of light emitting devices 150 configured with PX).

[0091] For example, the unit pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. For example, a plurality of red light-emitting devices 150R may be configured in the first sub-pixel PX1, a plurality of green light-emitting devices 150G may be configured in the second sub-pixel PX2, and a plurality of blue light-emitting devices 150B may be configured in the third sub-pixel PX3. The unit pixel PX may also include a fourth sub-pixel not configured with a light-emitting device, but is not limited thereto. On the other hand, the light-emitting device 150 may be a semiconductor light-emitting device.

[0092] then, Figure 5 is along Figure 4 A cross-sectional view of the A2 region taken along line B1-B2.

[0093] Reference Figure 5 The display device 100 of the embodiment may include a substrate 200 , assembly wirings 201 , 202 , a first insulating layer 211 a , a second insulating layer 211 b , a third insulating layer 206 , and a plurality of light emitting devices 150 .

[0094] The assembly wiring may include a first assembly wiring 201 and a second assembly wiring 202 separated from each other. The first assembly wiring 201 and the second assembly wiring 202 may generate a dielectrophoretic force for assembling the light emitting device 150. In addition, the first assembly wiring 201 and the second assembly wiring 202 may also be electrically connected to the electrodes of the light emitting device to function as electrodes of the display panel.

[0095] The assembly wiring 201, 202 may be formed of a light-transmitting electrode ITO or may contain a metal substance having excellent electrical conductivity. For example, the assembly wiring 201, 202 may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0096] A first insulating layer 211a may be disposed between the first assembled wiring 201 and the second assembled wiring 202, and a second insulating layer 211b may be disposed on the first assembled wiring 201 and the second assembled wiring 202. The first insulating layer 211a and the second insulating layer 211b may be oxide films, nitride films, etc., but are not limited thereto.

[0097] In order to realize each unit pixel (sub-pixel), the light emitting device 150 may include a red light emitting device 150, a green light emitting device 150G and a blue light emitting device 150B, but is not limited thereto, and may also have a red phosphor and a green phosphor to realize red and green respectively.

[0098] The substrate 200 may be formed of glass or polyimide. In addition, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). In addition, the substrate 200 may be a light-transmitting material, but is not limited thereto.

[0099] The third insulating layer 206 may include insulating and flexible materials such as polyimide, PEN, PET, etc., and may also be integrally formed with the substrate 200 to form a substrate.

[0100] The third insulating layer 206 may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer is flexible, so as to realize the flexible function of the display device. For example, the third insulating layer 206 may be a conductive adhesive layer such as an anisotropic conductive film (ACF) or an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer having conductivity in a direction perpendicular to the thickness and electrical insulation in a direction horizontal to the thickness.

[0101] The third insulating layer 206 may include an assembly hole 203 (see Figure 6 ). Therefore, during self-assembly, the light emitting device 150 can be easily inserted into the assembly hole 203 of the third insulating layer 206. The assembly hole 203 can be referred to as an insertion hole, a fixing hole, an alignment hole, etc.

[0102] The interval between the assembly wirings 201 and 202 is formed to be smaller than the width of the light emitting device 150 and the width of the assembly hole 203, so that the assembly position of the light emitting device 150 using an electric field can be fixed more accurately.

[0103] A third insulating layer 206 is formed on the wiring harnesses 201 and 202 to protect the wiring harnesses 201 and 202 from the fluid 1200 and prevent leakage of current flowing through the wiring harnesses 201 and 202. The third insulating layer 206 can be formed of an inorganic insulator such as silicon dioxide or aluminum oxide or an organic insulator in a single layer or multiple layers.

[0104] In addition, the third insulating layer 206 may include insulating and flexible materials such as polyimide, PEN, and PET, and may also be integrally formed with the substrate 200 to form one substrate.

[0105] The third insulating layer 206 may be an insulating layer with adhesiveness or a conductive adhesive layer with conductivity. The third insulating layer 206 has ductility, so as to play a flexible function of the display device.

[0106] The third insulating layer 206 may have a partition wall, and the assembly hole 203 may be formed by the partition wall. For example, when forming the substrate 200, a portion of the third insulating layer 206 is removed so that each of the plurality of light emitting devices 150 can be assembled to the assembly hole 203 of the third insulating layer 206.

[0107] The substrate 200 may be formed with an assembly hole 203, and a plurality of light emitting devices 150 may be combined with the assembly hole 203, and a surface formed with the assembly hole 203 may contact the fluid 1200. The assembly hole 203 may guide the accurate assembly position of the light emitting device 150.

[0108] On the other hand, the assembly hole 203 may have a shape and size corresponding to the shape of the light emitting device 150 to be assembled at a corresponding position. Thus, other light emitting devices or a plurality of light emitting devices may be prevented from being assembled in the assembly hole 203.

[0109] Figure 6 The figure shows an example in which the light emitting device is assembled on the substrate by the self-assembly method according to the embodiment. The self-assembly method of the light emitting device will be described with reference to the figure.

[0110] The substrate 200 may be a panel substrate of a display device. In the following description, the substrate 200 is described as a panel substrate of a display device, but the embodiment is not limited thereto.

[0111] Reference Figure 6 , a plurality of light emitting devices 150 may be put into a chamber 1300 filled with a fluid 1200. The fluid 1200 may be water such as ultrapure water, but is not limited thereto. The chamber may be referred to as a water tank, a storage tank, a container, or the like.

[0112] Then, the substrate 200 may be disposed on the chamber 1300. According to an embodiment, the substrate 200 may also be introduced into the chamber 1300.

[0113] like Figure 5 As shown, a pair of assembly wirings 201 and 202 corresponding to each of the light emitting devices 150 to be assembled may be arranged on the substrate 200 .

[0114] Reference Figure 6, after configuring the substrate 200, the assembly device 1100 including the magnetic body can be moved along the substrate 200. As an example of the magnetic body, a magnet or an electromagnet can be used. In order to maximize the area affected by the magnetic field in the fluid 1200, the assembly device 1100 can move in a state of contact with the substrate 200. According to an embodiment, the assembly device 1100 may include a plurality of magnetic bodies, or may also include a magnetic body of a size corresponding to the substrate 200. In this case, the moving distance of the assembly device 1100 may also be limited within a specified range.

[0115] The light emitting device 150 within the chamber 1300 may move toward the assembling apparatus 1100 by the magnetic field generated by the assembling apparatus 1100 .

[0116] When the light emitting device 150 moves toward the assembling device 1100 , it can enter the assembling hole 203 and contact the substrate 200 by using a dielectrophoresis force (DEP force).

[0117] Specifically, the assembly wirings 201 and 202 form an electric field by an AC power source supplied from the outside, and the electric field can generate a dielectrophoretic force between the assembly wirings 201 and 202. The assembly hole 203 on the substrate 200 can fix the light emitting device 150 by utilizing the dielectrophoretic force.

[0118] The electric field applied by the assembly wirings 201 and 202 formed on the substrate 200 can prevent the light emitting device 150 in contact with the substrate 200 from being separated due to the movement of the assembly device 1100. According to the embodiment, by using the self-assembly method of the electromagnetic field, the time required for assembling each of the plurality of light emitting devices 150 to the substrate 200 can be drastically shortened, so that a large-area high-pixel display can be realized more quickly and economically.

[0119] At this time, a predetermined solder layer (not shown) is formed between the light emitting device 150 assembled on the assembly hole 203 of the substrate 200 and the assembly electrode, so that the bonding force of the light emitting device 150 can be improved.

[0120] Next, a mold layer (not shown) may be formed in the assembly hole 203 of the assembly substrate 200. The mold layer may be a light-transmitting resin or a resin containing a reflective material or a scattering material.

[0121] Hereinafter, a semiconductor light emitting device display device according to an embodiment for solving the technical problem will be described with reference to the accompanying drawings.

[0122] [Example]

[0123] on the other hand, Figures 7a to 7d This is data on internal technology related to the display panel.

[0124] Specifically, Figure 7a This is a FIB (focused ion beam) photo of the light-emitting device (chip) and bonding metal (bonding metal) in the display panel of the internal technology. Figure 7b It is a surface image photograph of bonded metal in internal technology.

[0125] like Figure 7a and Figure 7b As shown, the surface morphology of the back bonding metal in the semiconductor light emitting device of the internal technology is poor, and the contact characteristics between the back bonding metal of the light emitting device and the panel wiring are poor, so that lighting failure occurs.

[0126] For example, Figure 7c It is the lighting data in the display panel of the internal technology.

[0127] According to internal technical research, due to the poor surface properties of the back-bonded metal, poor lighting (B: Bad) or no lighting (F: Fail) occurs, and good lighting (G: Good) cannot be achieved. The lighting rate is about 93% to 94%.

[0128] In internal technology, the electrode layer of the light-emitting device can use materials such as Ti, Cu, Pt, Ag, and Au. When the electrode layer of such material forms a bonding metal such as Sn or In, the surface becomes uneven due to agglomeration and the like.

[0129] On the other hand, in the internal technology, the deposition rate is increased to improve the surface properties of the bonding metal. However, even though the agglomeration phenomenon is partially alleviated, another problem is found that the grain size decreases as the deposition rate increases, thereby causing a decrease in contact force. This puts the situation in which it is not easy to improve the surface properties of the bonding metal.

[0130] then, Figure 7d This is a diagram showing a tilt phenomenon that occurs during self-assembly in an internal technology.

[0131] According to the internal technology, a dielectric layer 4 is arranged on the assembly electrodes 2 and 3 on the assembly substrate 1, and self-assembly based on the dielectrophoretic force of the light-emitting device 7 is performed in the assembly hole 7 defined by the assembly partition wall 5. However, according to the research of the internal technology, there is a problem that the dielectrophoretic force is dispersed or weakened, and normal self-assembly cannot be performed, and tilting occurs in the assembly hole 7.

[0132] Therefore, one of the technical problems of the embodiment is to solve the problem of low self-assembly rate caused by non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP).

[0133] In addition, one of the technical problems of the embodiment is to solve the problem that it is difficult to control the orientation of LED chips in the self-assembly method using dielectrophoresis (DEP).

[0134] In addition, one of the technical problems of the embodiment is to solve the problem that the lighting rate decreases due to the decrease in electrical contact characteristics between the electrodes of the self-assembled LED chip and the predetermined panel electrodes.

[0135] Figure 8 is a cross-sectional view of a display device 300 according to the first embodiment, Fig. 9 1 is a cross-sectional view of a first semiconductor light emitting device 100 in a display device of the first embodiment. (In the following description, the "first embodiment" is referred to as the "embodiment" for short)

[0136] Reference Figure 8 The display device 300 having a semiconductor light emitting device of the embodiment may include a substrate 305 , a first assembly electrode 310 , a second assembly electrode 320 , an assembly partition wall 340 , and a semiconductor light emitting device 100 .

[0137] Specifically, the display device 300 with a semiconductor light-emitting device of the embodiment may include: a substrate 305; a first assembly electrode 310 and a second assembly electrode 320, which are arranged on the substrate 305 and are separated from each other; an assembly partition wall 340, including a specified assembly hole 340H, which is arranged on the first assembly electrode 310 and the second assembly electrode 320; and a semiconductor light-emitting device 100, which is arranged in the assembly hole 340H and is electrically connected to the first assembly electrode 310 and the second assembly electrode 320.

[0138] In addition, the display device 300 having the semiconductor light emitting device of the embodiment may include: a light-transmitting resin 360 filling the assembly hole 340H; and a second panel wiring 370 electrically connected to the first semiconductor light emitting device 100 .

[0139] The second panel wiring 370 may be a light-transmitting member that transmits light, and may include, for example, ITO. In addition, the second panel wiring 370 may include an ohmic metal layer.

[0140] According to the semiconductor light emitting device of the embodiment and the display device including the semiconductor light emitting device, in the self-assembly step, the lower semiconductor layer and the lower electrode of the LED chip can be formed to be wider than the upper semiconductor layer. Thus, according to the embodiment, a relatively large dielectrophoretic force (DEP force) is formed on the lower electrode plate side, thereby having a technical effect of being able to correctly assemble the LED chip by controlling the assembly direction.

[0141] In addition, according to the embodiment, the light extraction efficiency is improved by preventing total reflection of light emitted by the dome-shaped upper semiconductor layer after self-assembly, and in addition, due to the wide lower electrode plate, the electrical contact area in the display panel end is increased, thereby having a composite technical effect of improving electrical characteristics.

[0142] In addition, according to the embodiment, there is a technical effect that the problem of low self-assembly rate due to non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP) can be solved.

[0143] In addition, the light-emitting device used in the embodiment has a translucent electrode layer, so that the lower electrode layer has a flat surface characteristic, so that the dielectrophoretic force (DEP force) acts evenly on the lower part of the light-emitting device chip, thereby having the technical effect of significantly improving the correct assembly rate of the light-emitting device chip in the assembly hole.

[0144] In addition, according to the embodiment, there is a technical effect that it is possible to solve the problem that the lighting rate is reduced due to the reduction in electrical contact characteristics between the electrodes of the self-assembled light-emitting device and the prescribed panel electrodes.

[0145] Below, refer to Fig. 9 , illustrate the first semiconductor light emitting device 100 of the embodiment and explain the technical features of the invention of this application in detail.

[0146] Reference Fig. 9 As shown in the figure, the first semiconductor light emitting device 100 of the embodiment can be implemented by a vertical semiconductor light emitting device, but is not limited thereto, and a horizontal light emitting device can also be used.

[0147] The first semiconductor light emitting device 100 may include a light emitting structure 110 , a second electrode layer 130 and a passivation layer 120 .

[0148] For example, the first semiconductor light emitting device 100 may include: a second electrode layer 130 disposed on the second conductive semiconductor layer 113 ; and a passivation layer 120 disposed on a portion of the top surface and side surfaces of the light emitting structure 110 .

[0149] The light emitting structure 110 may include a first conductive semiconductor layer 111, a second conductive semiconductor layer 113, and an active layer 112 disposed between the first conductive semiconductor layer 111 and the second conductive semiconductor layer 113. The first conductive semiconductor layer 111 may be an n-type semiconductor layer, and the second conductive semiconductor layer 113 may be a p-type semiconductor layer, but is not limited thereto.

[0150] The first conductive semiconductor layer 111, the active layer 112, and the second conductive semiconductor layer 113 may be formed of compound semiconductor materials. For example, the compound semiconductor materials may be group 3-5 compound semiconductor materials, group 2-6 compound materials, etc. For example, the compound semiconductor materials may include GaN, InGaN, AlN, AlInN, AlGaN, AlInGaN, InP, GaAs, GaP, GaInP, etc.

[0151] For example, the first conductive type semiconductor layer 111 may include a first conductive type dopant, and the second conductive type semiconductor layer 113 may include a second conductive type dopant. For example, the first conductive type dopant may be an n-type dopant such as silicon (Si), and the second conductive type dopant may be a p-type dopant such as boron (B).

[0152] The active layer 112 is a region that generates light, and can generate light having a specific wavelength band according to the material properties of the compound semiconductor. That is, the wavelength band can be determined by the energy band gap of the compound semiconductor included in the active layer 112. Therefore, according to the energy band gap of the compound semiconductor included in the active layer 112, the semiconductor light emitting device 110 of the embodiment can generate UV light, blue light, green light, and red light.

[0153] Next, the second electrode layer 130 may include a metal with excellent electrical conductivity. The second electrode layer 130 may include an adhesive metal layer. For example, the second electrode layer 130 may include an adhesive metal such as Sn, In, but is not limited thereto. In addition, in order to enhance the adhesive force, the second electrode layer 130 may further include an adhesive layer such as Cr and Ti (not shown).

[0154] The second electrode layer 130 may include a magnetic layer (not shown). The magnetic layer may be disposed on the lower side or the upper side of the light emitting structure 110. The magnetic layer may include a nickel (Ni) layer, but is not limited thereto.

[0155] Next, the passivation layer 120 may be formed of an inorganic insulator such as silicon dioxide or aluminum oxide by PECVD (plasma enhanced chemical vapor deposition), LPCVD (low pressure chemical vapor deposition), sputtering deposition, etc. After the semiconductor light emitting device 100 is assembled to the assembly substrate 200, a portion of the upper layer of the passivation layer 120 may be etched during the manufacturing process of the display device.

[0156] One of the technical problems of the embodiment is to solve the problem of low self-assembly rate caused by non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP).

[0157] In addition, one of the technical problems of the embodiment is to solve the problem that it is difficult to control the orientation of LED chips in the self-assembly method using dielectrophoresis (DEP).

[0158] In addition, one of the technical problems of the embodiment is to solve the problem that the lighting rate decreases due to the decrease in electrical contact characteristics between the electrodes of the self-assembled LED chip and the predetermined panel electrodes.

[0159] The first semiconductor light emitting device 100 of the embodiment for solving the above technical problems may include a protruding semiconductor layer 110P and / or a curved semiconductor layer 110R.

[0160] For example, a portion of an upper portion of the first conductive type semiconductor layer 111 in the first semiconductor light emitting device 100 may include an arc-shaped semiconductor layer 110R having an arc-shaped side surface.

[0161] For example, an upper portion of the first conductive type semiconductor layer 111 in the first semiconductor light emitting device 100 may include an arc-shaped semiconductor layer 110R having an arc-shaped top surface.

[0162] For example, a portion of an upper portion of the first conductive type semiconductor layer 111 in the first semiconductor light emitting device 100 may include an arc-shaped semiconductor layer 110R having an arc shape on the side surface and the top surface.

[0163] In addition, a portion of the side surface of the first conductive semiconductor layer 111 may include a protruding semiconductor layer 110P that extends more horizontally in both sides than the side surface of the arc-shaped semiconductor layer 110R.

[0164] The passivation layer 120 is not formed on the protruding semiconductor layer 110P, and the first conductive type semiconductor layer 111 may be exposed, but the present invention is not limited thereto.

[0165] For example, a passivation layer 120 may also be formed on the protruding semiconductor layer 110P.

[0166] The protruding semiconductor layer 110P may include a first conductive type semiconductor layer 111 , a second conductive type semiconductor layer 113 , and an active layer 112 disposed between the first conductive type semiconductor layer 111 and the second conductive type semiconductor layer 113 .

[0167] Thus, the horizontal width of the active layer 112 can be ensured to be a width corresponding to the maximum horizontal width of the semiconductor light emitting device, thereby maximizing the light emitting area and improving the brightness.

[0168] In addition, in the protruding semiconductor layer 110P, the first conductive type semiconductor layer 111 is disposed on the active layer 112 , thereby having a technical effect of improving internal light emission efficiency by minimizing etching damage of the active layer 112 .

[0169] According to the embodiment, due to the protruding semiconductor layer 110P, the lower side of the semiconductor light emitting device 100 is subjected to a greater dielectrophoretic force (DEP force), thus having a special technical effect of controlling the up and down directivity of the semiconductor light emitting device 100 .

[0170] For example, when the first semiconductor light emitting device 100 is a vertical light emitting device, the directionality of the first conductive semiconductor layer 111 and the second conductive semiconductor layer 113 is crucial for electrical connection with the plurality of assembly electrodes 310 and 320 .

[0171] In the internal technology, when the semiconductor light-emitting device is a vertical light-emitting device, it is difficult to control the directionality of the first conductive semiconductor layer 111 and the second conductive semiconductor layer 113. According to an embodiment, the semiconductor light-emitting device has a protruding semiconductor layer 110P, and a larger dielectric electrophoresis force (DEP force) is applied to the protruding semiconductor layer 110P, so it has a special technical effect of being able to control the direction of the second conductive semiconductor layer 113 in the directions of multiple assembled electrodes 310 and 320.

[0172] In addition, in the semiconductor light emitting device 100 of the embodiment, the horizontal width of the second electrode layer 130 disposed on the second conductive type semiconductor layer 113 may be formed to be larger to correspond to the horizontal width of the protruding semiconductor layer 110P.

[0173] Thus, according to the display device of the embodiment, in the self-assembly step, the lower semiconductor layer of the LED chip and the second electrode layer 130 as the lower electrode can be formed to be wider than the upper semiconductor layer. Therefore, according to the embodiment, a relatively large dielectrophoretic force (DEP force) is formed on the side of the second electrode layer 130 as the lower electrode plate, thereby having a special technical effect of being able to correctly assemble the LED chip by controlling the assembly direction.

[0174] In addition, since the semiconductor light emitting device of the embodiment includes a dome-shaped arcuate semiconductor layer 110R, the light extraction efficiency is improved by preventing total reflection of light emitted by the dome-shaped upper arcuate semiconductor layer 110R after self-assembly. In addition, since the second electrode layer 130 is a wide lower electrode plate, the electrical contact area at the display panel end is increased, thereby having a composite technical effect of improving electrical characteristics.

[0175] In addition, since the semiconductor light-emitting device of the embodiment includes a dome-shaped arc-shaped semiconductor layer 110R, the active layer 112 exists in a region where the horizontal width of the active layer 112 corresponds to the horizontal width of the protruding semiconductor layer 110P which is the maximum horizontal width of the semiconductor light-emitting device, and the entire chip size can become the light-emitting area. As a result, the light-emitting area is wider than that of existing chips, thereby significantly improving the light efficiency.

[0176] In addition, according to the embodiment, during the self-assembly process, even if the arc-shaped semiconductor layer 110R is positioned toward the assembly electrode to the assembly hole 340H, since the area corresponding to the assembly electrode is small and the influence of the electric field is weak, it will directly detach even if it enters the assembly hole, thereby preventing poor assembly.

[0177] In addition, in the embodiment, the friction between the semiconductor light emitting device having the arc-shaped semiconductor layer 110R and the assembly substrate is small, so the moving speed of the light emitting device chip is very fast, thereby being able to increase the assembly speed.

[0178] then, Fig.10 is a cross-sectional view of a display device 302 of the second embodiment, Fig.11 is a cross-sectional view of a second semiconductor light emitting device 102 in the display device of the second embodiment.

[0179] The display device 302 and the second semiconductor light emitting device 102 of the second embodiment can adopt the technical features of the display device 300 and the semiconductor light emitting device 100 of the first embodiment. Fig.11 The technical features of the second embodiment will be mainly described.

[0180] Reference Fig.11 The second electrode layer 130 may include at least one of a light-transmitting electrode layer 130a, a reflective layer 130b, a magnetic layer 130c, and an adhesive layer 130d.

[0181] For example, the second electrode layer 130 may include a light-transmitting electrode layer 130 a disposed on the light-emitting structure 110 .

[0182] The light-transmitting electrode layer 130a may include at least one of ITO (indium tin oxide), IAZO (indium aluminum zinc oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO nitride), AGZO (Al-Ga ZnO), and IGZO (In-Ga ZnO), but is not limited to these materials.

[0183] In addition, the second electrode layer 130 may include a reflective layer 130b disposed on the light-transmitting electrode layer 130a. The reflective layer 130b may be made of Ag, Al, or AgPdCu with good reflectivity.

[0184] In addition, the second electrode layer 130 may include a magnetic layer 130 c such as Ni configured on the reflective layer 130 b.

[0185] In addition, the second electrode layer 130 may include an adhesive layer 130d disposed on the magnetic layer 130c. The adhesive layer 130d may be made of a metal having excellent adhesiveness such as Ti or Cr.

[0186] Second, according to the embodiment, there is a technical effect of being able to solve the problem of low self-assembly rate due to non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP).

[0187] For example, in the second embodiment, since the light-transmitting electrode layer 130a disposed on the light-emitting device chip has a dielectric constant and thus functions as a dielectric film, it has a unique special technical effect of improving the dielectrophoretic force (DEP force) and the assembly rate.

[0188] In addition, the light-emitting device used in the embodiment has a translucent electrode layer 130a, so that the lower electrode layer has a flat surface characteristic, so that the dielectrophoretic force (DEP force) acts evenly on the lower part of the light-emitting device chip, thereby having the technical effect of significantly improving the correct assembly rate of the light-emitting device chip in the assembly hole.

[0189] In addition, according to the embodiment, there is a technical effect that it is possible to solve the problem that the lighting rate is reduced due to the reduction in electrical contact characteristics between the electrodes of the self-assembled light-emitting device and the prescribed panel electrodes.

[0190] For example, according to the embodiment, a light-transmitting electrode layer 130a is formed between the epitaxial layer (GaN) of the light-emitting structure 110 as a semiconductor light-emitting device (chip) and the lower adhesive layer 130d, thereby having a technical effect of significantly improving the surface morphology of the back adhesive metal. Thus, according to the embodiment, the contact characteristics between the back metal of the light-emitting device and the panel wiring are significantly improved, thereby having a technical effect of solving the lighting failure.

[0191] For example, Fig.12a and Figure 12b This is the data of the micro LED display of the second embodiment.

[0192] Specifically, Fig.12a is a FIB photograph of a semiconductor light-emitting device used in a micro-LED display of an embodiment, Figure 12b yes Fig.12a Surface image photograph of bonded metal. Fig.12a and Figure 12b This is an experimental example or embodiment in which ITO is used as the material of the light-transmitting electrode layer 130 a , but the invention is not limited thereto.

[0193] According to the embodiment, a translucent electrode layer 130a is formed between the semiconductor light emitting device (chip) epitaxial layer (GaN) and the lower bonding metal, thereby having a technical effect of significantly improving the surface morphology of the back bonding metal. Thus, according to the embodiment, the contact characteristics between the back metal of the light emitting device and the panel wiring are significantly improved, thereby having a technical effect of solving the problem of poor lighting.

[0194] For example, Figure 12b : is lighting data in the display panel of the embodiment. According to the embodiment, poor lighting is prevented by improving the surface properties of the back metal, thereby achieving good lighting (G: Good), thereby solving the problem of weak lighting or no lighting.

[0195] In an embodiment, the light-transmitting electrode layer 130 a may be formed to be thinner than the adhesive layer 130 d .

[0196] For example, the light-transmitting electrode layer 130a may be formed to have a thickness of 100 nm or less. Alternatively, the light-transmitting electrode layer 130a may be formed to have a thickness of 80 nm or less. Alternatively, the light-transmitting electrode layer 130a may be formed to have a thickness of 60 nm or less.

[0197] In addition, the light-transmitting electrode layer 130a may be formed to have a thickness of 10 nm or more. In addition, the light-transmitting electrode layer 130a may be formed to have a thickness of 20 nm or more. In addition, the light-transmitting electrode layer 130a may be formed to have a thickness of 30 nm or more.

[0198] According to internal research, the surface property of the light-transmitting electrode layer 130a becomes hydrophilic, so that the surface property of the adhesive layer 130d formed on the light-transmitting electrode layer 130a is significantly improved, so that the adhesive layer 130d is uniformly formed without agglomeration.

[0199] The light-transmitting electrode layer 130 a of the embodiment has a higher melting point than the melting point of the bonding metal, and thus has a special technical effect that no reliability problem will occur during the hot pressing process.

[0200] In the existing electronic component field using light-emitting devices, ITO is used for the upper electrode layer of light-emitting devices, but ITO has relatively low conductivity, making it difficult to use as a lower electrode layer material. In addition, ITO has a physical property of being brittle and weak in impact resistance, so there are technical barriers when using it as a bonding metal material for hot pressing processes.

[0201] On the other hand, according to the embodiment, by subjecting the light-transmitting electrode layer 130a to O2 plasma or Ar plasma treatment, there is a technical effect that the contact force with the magnetic layer or Sn solder layer as the lower electrode layer can be improved, and the reliability of the light-transmitting electrode layer 130a can be improved. In addition, due to the O2 plasma or Ar plasma treatment, the surface of ITO becomes a hydrophilic surface, thereby significantly improving the surface properties of the magnetic layer 130c or the adhesive layer 130d formed on the light-transmitting electrode layer 130a, and there is a technical effect that the surface is uniformly formed without agglomeration.

[0202] Specifically, according to the embodiment, after being assembled in a self-assembly manner, the p-type semiconductor layer and the n-type semiconductor layer of the light-emitting device chip are connected for lighting. At this time, in the existing internal technology, the basic characteristics of the back metal Sn for lighting are formed unevenly after deposition. In such an existing chip, the area of ​​contact with the portion connected to the lighting wiring is small, so that after lighting, the lighting is weak or does not light up.

[0203] However, the flat vertical chip used in the embodiment is in surface contact with the lower lighting wiring electrode as a whole, so that there is a technical effect of excellent electrical contact and significantly improved lighting yield.

[0204] In addition, the semiconductor light emitting device and the display device including the semiconductor light emitting device according to the embodiment have the technical effect of being able to solve the problem of low self-assembly rate due to the non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP).

[0205] For example, in a self-assembly method based on dielectrophoretic force using electric and magnetic fields in a fluid, a larger dielectrophoretic force (DEP force) is generated on a chip as the dielectric constant increases.

[0206] In the embodiment, since the light-transmitting electrode disposed on the light-emitting device chip has a dielectric constant and thus functions as a dielectric film, it has a unique special technical effect of improving the assembly rate by improving the dielectrophoretic force (DEP force).

[0207] In addition, in dielectrophoresis, the dielectrophoretic force (DEP force) is concentrated on the corners, and the bonding metal in the existing LED chip is unevenly protruding, and the dielectrophoretic force (DEP force) is biased to one side, so the LED chip is likely to tilt.

[0208] On the other hand, the light-emitting device used in the embodiment has a light-transmitting electrode layer, so that the lower electrode layer has a flat surface characteristic, so that the dielectrophoretic force (DEP force) acts evenly on the lower part of the light-emitting device chip, thereby having the technical effect of significantly improving the correct assembly rate of the light-emitting device chip in the assembly hole.

[0209] In addition, in the existing internal technology, the back metal of the light-emitting device chip has the property of agglomerating when placed on other metals, so the surface becomes uneven, and even if it enters the assembly hole, the contact area is small and it is easy to detach, thereby reducing the assembly rate.

[0210] On the other hand, according to the embodiment, the adhesive metal formed on the back side is formed flatly, so the area where the back side of the light-emitting device assembled to the assembly hole by the electric field contacts the inside of the assembly hole flatly becomes larger and more stable, thereby achieving the technical effect of improving the assembly rate.

[0211] The following describes the manufacturing process of the first semiconductor light emitting device 100 and the second semiconductor light emitting device 102 in the embodiment, referring to Fig.11, the description is centered around the second semiconductor light emitting device 102.

[0212] Reference Fig.11 The light emitting structure 110 may be formed on a predetermined first substrate (not shown), and the second electrode layer 130 may be formed on the light emitting structure 110 .

[0213] The first substrate may be a sapphire substrate, but is not limited thereto. An undoped semiconductor layer (not shown) may be formed on the first substrate.

[0214] The light emitting structure 110 may include a first conductive semiconductor layer 111, an active layer 112, and a second conductive semiconductor layer 113. The first conductive semiconductor layer 111 may be an n-type semiconductor layer, and the second conductive semiconductor layer 113 may be a p-type semiconductor layer, but is not limited thereto.

[0215] The second electrode layer 130 may include a light-transmitting electrode layer 130 a , a reflective layer 130 b , a magnetic layer 130 c , and an adhesive layer 130 d that are sequentially formed on the light-emitting structure 110 .

[0216] After the light-transmitting electrode layer 130a is formed, the aforementioned plasma process may be performed. The reflective layer 130b may be made of Ag, Al, or AgPdCu, which have good reflectivity.

[0217] The adhesive layer 130d may be made of a metal having excellent adhesiveness such as Ti or Cr.

[0218] Then, a predetermined second substrate (not shown) can be bonded to the second electrode layer 130, and the first substrate can be removed by front LLO (Laser Lift-off) to form a light-emitting structure 110 in which a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer are sequentially arranged on the second substrate.

[0219] Then, in order to remove the undoped semiconductor layer and form a dome-shaped arc-shaped semiconductor layer, a first arc-shaped etching pattern (not shown) may be formed on the exposed first conductive type semiconductor layer 111 .

[0220] The first arc-shaped etching pattern may be made of PR or SiO2 material, but is not limited thereto, and may be etched using a plasma device. At this time, when forming the PR or SiO2 pattern, if it is made into a dome shape, the GaN as a light-emitting structure may also be made into the same shape during plasma etching.

[0221] At this time, the protruding semiconductor layer 110P may be formed by etching a portion of the first conductive type semiconductor layer 111 before reaching the active layer 112 .

[0222] Next, the semiconductor light emitting device of the embodiment may be manufactured by depositing the passivation layer 120 on the light emitting structure 110 and removing the second substrate.

[0223] According to the semiconductor light emitting device of the embodiment and the display device including the semiconductor light emitting device, in the self-assembly step, the lower semiconductor layer and the lower electrode of the LED chip can be formed to be wider than the upper semiconductor layer. Thus, according to the embodiment, a relatively large dielectrophoretic force (DEP force) is formed on the lower electrode plate side, thereby having a technical effect of being able to correctly assemble the LED chip by controlling the assembly direction.

[0224] In addition, according to the embodiment, the light extraction efficiency is improved by preventing total reflection of light emitted by the dome-shaped upper semiconductor layer after self-assembly, and in addition, due to the wide lower electrode plate, the electrical contact area in the display panel end is increased, thereby having a composite technical effect of improving electrical characteristics.

[0225] In addition, since the semiconductor light-emitting device of the embodiment includes a dome-shaped arc-shaped semiconductor layer 110R, the active layer 112 exists in a region where the horizontal width of the active layer 112 corresponds to the horizontal width of the protruding semiconductor layer 110P which is the maximum horizontal width of the semiconductor light-emitting device, and the entire chip size can become the light-emitting area. As a result, the light-emitting area is wider than that of existing chips, thereby significantly improving the light efficiency.

[0226] In addition, according to the embodiment, during the self-assembly process, even if the arc-shaped semiconductor layer 110R is positioned toward the assembly electrode to the assembly hole 340H, since the area corresponding to the assembly electrode is small and the influence of the electric field is weak, it will directly detach even if it enters the assembly hole, thereby preventing poor assembly.

[0227] In addition, in the embodiment, the friction between the semiconductor light emitting device having the arc-shaped semiconductor layer 110R and the assembly substrate is small, so the moving speed of the light emitting device chip is very fast, thereby being able to increase the assembly speed.

[0228] In addition, according to the embodiment, there is a technical effect that the problem of low self-assembly rate due to non-uniformity of dielectrophoresis force (DEP force) in the self-assembly method using dielectrophoresis (DEP) can be solved.

[0229] In addition, the light-emitting device used in the embodiment has a translucent electrode layer, so that the lower electrode layer has a flat surface characteristic, so that the dielectrophoretic force (DEP force) acts evenly on the lower part of the light-emitting device chip, thereby having the technical effect of significantly improving the correct assembly rate of the light-emitting device chip in the assembly hole.

[0230] In addition, according to the embodiment, there is a technical effect that it is possible to solve the problem that the lighting rate is reduced due to the reduction in electrical contact characteristics between the electrodes of the self-assembled light-emitting device and the prescribed panel electrodes.

[0231] The above detailed description should be understood as exemplary and should not be interpreted as limiting in all aspects. The scope of the embodiment should be determined by reasonable interpretation of the attached claims, and all changes within the equivalent scope of the embodiment are included in the scope of the embodiment.

[0232] Industrial Applicability

[0233] The embodiments may be applied to the display field for displaying images or information.

[0234] The embodiments may be applied to a display field that uses a semiconductor light emitting device to display images or information.

[0235] The embodiments may be applied to the display field that uses micrometer-scale or nanometer-scale semiconductor light-emitting devices to display images or information.

Claims

1. A semiconductor light emitting device for a display pixel, wherein: include: A light emitting structure, comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; A passivation layer, disposed on the light-emitting structure; as well as A second electrode layer is disposed below the light emitting structure; The light emitting structure comprises an arc-shaped semiconductor layer, a portion of the top surface of which is arc-shaped.

2. The semiconductor light emitting device for display pixel according to claim 1, wherein: The light emitting structure includes the arc-shaped semiconductor layer whose upper portion of the first conductive semiconductor layer has an arc-shaped side surface.

3. The semiconductor light emitting device for display pixel according to claim 1, wherein: The light emitting structure includes the arc-shaped semiconductor layer, in which a portion of the side surface and a portion of the top surface of the upper portion of the first conductive type semiconductor layer are arc-shaped.

4. The semiconductor light emitting device for display pixel according to claim 1, wherein: The light emitting structure further includes a protruding semiconductor layer extending in horizontal directions on both sides further than the side surfaces of the arc-shaped semiconductor layer.

5. The semiconductor light emitting device for display pixel according to claim 4, wherein: The protruding semiconductor layer includes the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer.

6. The semiconductor light emitting device for display pixel according to claim 5, wherein: The horizontal width of the active layer is formed to correspond to the maximum horizontal width of the light emitting structure.

7. The semiconductor light emitting device for display pixel according to claim 4, wherein: The second electrode layer includes a light-transmitting electrode layer disposed on the light-emitting structure.

8. The semiconductor light emitting device for display pixel according to claim 7, wherein: The second electrode layer includes a reflective layer disposed on the light-transmitting electrode layer, a magnetic layer disposed on the reflective layer, and an adhesive layer disposed on the magnetic layer.

9. The semiconductor light emitting device for display pixel according to claim 4, wherein: The horizontal width of the protruding semiconductor layer is the same as the horizontal width of the second electrode layer.

10. The semiconductor light emitting device for display pixel according to claim 7, wherein: The surface of the light-transmitting electrode layer is a hydrophilic surface.

11. The semiconductor light emitting device for display pixel according to claim 10, wherein: The light-transmitting electrode layer is treated with O2 plasma or Ar plasma.

12. A display device, wherein: including semiconductor light emitting devices, The semiconductor light emitting device includes the semiconductor light emitting device for display pixels according to claim 1 .

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