Polishing pad replacing and trimming process method

Abstract

The invention relates to a process method for replacing and trimming a polishing pad, which belongs to the technical field of silicon wafer processing equipment and comprises the following operation steps of: 1, comprehensively cleaning a fixed disc; and secondly, the polishing pad is flatly attached to the surface of the fixed disc. And thirdly, the rotating speed of the fixed disc is adjusted to be 30 rpm, and the polishing cloth is gradually pressed and ironed from the center of the fixed disc to the outer edge through a Teflon pressing rod. And fourthly, redundant polishing pads on the edges are cut off through an art knife. And fifthly, the attached polishing pad needs to be pretreated, and polishing operation can be conducted. Sixthly, brushing is conducted for 15 min through a disc brush, and finally washing is conducted twice through high-pressure water. And seventhly, final polishing is conducted through the polishing pad, and brushing is conducted. And 8, finishing cloth pasting and trimming, and polishing the silicon wafer. The method has the advantages of convenient operation, good effect and high operation reliability. And the effect of improving the quality of the polished surface is achieved.

Description

Technical Field

[0001] The invention relates to the technical field of silicon wafer processing equipment, and in particular to a process method for replacing a polishing pad and repairing a polishing pad. Background Art

[0002] At present, the characteristic line width of ultra-large-scale integrated circuit manufacturing technology is further miniaturized, which puts forward higher requirements on the flatness of silicon wafer surface. Traditional single-sided polishing can no longer meet the needs; double-sided chemical mechanical polishing (DSP) is developed on the basis of the original single-sided chemical mechanical polishing (SSP).

[0003] During the entire processing process, the back and front sides of the silicon wafer are undergoing chemical mechanical polishing at the same time. After polishing, both the front and back sides of the silicon wafer are mirror surfaces, which will achieve better overall and local flatness of the silicon wafer than traditional single-sided chemical mechanical polishing.

[0004] Polishing is a process in which chemical reaction and mechanical grinding work together. To obtain a good quality polishing sheet, these two effects must be balanced throughout the polishing process. The polishing pad is the main material in chemical mechanical polishing. Under the combined action of the polishing pad and the polishing liquid, the silicon wafer is continuously ground and removed to finally achieve the desired flat surface.

[0005] During the polishing process, as the number of polishing times increases, the surface of the polishing pad will be worn out due to long-term mechanical and chemical effects on the surface of the silicon wafer, affecting the polishing quality of the silicon wafer and requiring regular dressing. The dressing process determines the quality of subsequent polishing pads and the life of the polishing cloth. Summary of the invention

[0006] The present invention mainly solves the deficiencies in the prior art and provides a process for replacing and repairing a polishing pad, which has the advantages of convenient operation, good effect and high operating reliability. It can solve the problem of abnormal polishing surface and achieve the effect of improving the quality of the polishing surface.

[0007] The above technical problems of the present invention are mainly solved by the following technical solutions: A process for replacing a polishing pad and repairing a polishing pad comprises the following steps: Step 1: Clean the plate thoroughly, then rinse it with water for 3 minutes, wipe it clean with a dust-free cloth, and then wipe it again with isopropyl alcohol until the plate is completely dry.

[0008] Step 2: Fit the polishing pad evenly to the surface of the fixed plate without pulling it hard.

[0009] Step 3: Adjust the speed of the fixed plate to 30 rpm, and use the Teflon pressure rod to press the polishing cloth from the center of the fixed plate to the outside.

[0010] Step 4: Use a utility knife to cut away any excess polishing pad from the edges.

[0011] Step 5: The polishing pad needs to be pre-treated before polishing. For the rough polishing pad, first use high-pressure pure water to brush it 3 times, and then use the diamond brush to repair the cloth for 5 minutes at a speed of 30rpm.

[0012] Step 6: Brush with a disc brush for 15 minutes, and finally rinse with high-pressure water twice.

[0013] Step 7: Perform final polishing with a polishing pad and scrub.

[0014] Step 8: After the cloth pasting and repairing are completed, the silicon wafer polishing operation is carried out.

[0015] Preferably, the polishing pad is adhered from one side and then gradually rolled to the other side using a Teflon round rod until the other side is completely adhered and no air bubbles are allowed to appear between the polishing pad and the platen.

[0016] Preferably, a proper amount of ultrapure water is sprayed on the platen while the platen is rotating with a Teflon pressure rod, the pure water flow rate is 7 L / min, and the pure water flow rate error is ±1 L / min, to discharge the bubbles in the polishing pad and the platen, so that the polishing pad can be better bonded to the platen.

[0017] Preferably, the polishing pad is finally polished by manually brushing the polishing pad with TSC-1 solution for 5 minutes to wet the polishing pad.

[0018] Preferably, the polishing pad is moistened and then scrubbed with polishing liquid for 15 minutes, and finally rinsed twice with high-pressure water.

[0019] The present invention can achieve the following effects: The present invention provides a process for replacing and repairing a polishing pad, which has the advantages of convenient operation, good effect and high operating reliability compared with the prior art. It can solve the problem of abnormal polishing surface and achieve the effect of improving the quality of the polishing surface. DETAILED DESCRIPTION

[0020] The technical solution of the invention is further specifically described below through embodiments.

[0021] Embodiment: A process for replacing and repairing a polishing pad comprises the following steps: Step 1: Clean the plate thoroughly, then rinse it with water for 3 minutes, wipe it clean with a dust-free cloth, and then wipe it again with isopropyl alcohol until the plate is completely dry.

[0022] Step 2: Fit the polishing pad evenly to the surface of the fixed plate without pulling it hard.

[0023] Start sticking the polishing pad from one side, then use a Teflon round rod to gradually roll it to the other side until the other side is completely stuck. No bubbles should appear between the polishing pad and the plate.

[0024] Step 3: Adjust the platen speed to 30rpm, and use the Teflon pressure rod to gradually press the polishing cloth from the center of the platen to the outside. While the platen is rotating, spray an appropriate amount of ultrapure water with the Teflon pressure rod. The pure water flow rate is 7L / min, and the pure water flow rate error is ±1L / min.

[0025] Step 4: Use a utility knife to cut away any excess polishing pad from the edges.

[0026] Step 5: The polishing pad needs to be pre-treated before polishing. For the rough polishing pad, first use high-pressure pure water to brush it 3 times, and then use the diamond brush to repair the cloth for 5 minutes at a speed of 30rpm.

[0027] Step 6: Brush with a disc brush for 15 minutes, and finally rinse with high-pressure water twice.

[0028] Step 7: Perform final polishing with a polishing pad and scrub.

[0029] The polishing pad was polished for the final time. To moisten the polishing pad, the pad was manually brushed with TSC-1 solution for 5 minutes. After the polishing pad was moistened, it was brushed with polishing solution for 15 minutes and finally rinsed twice with high pressure water.

[0030] Step 8: After the cloth pasting and repairing are completed, the silicon wafer polishing operation is carried out.

[0031] In summary, the process method for replacing and repairing the polishing pad has the advantages of convenient operation, good effect and high operating reliability. It can solve the abnormal problem of the polishing surface and achieve the effect of improving the quality of the polishing surface.

[0032] The above description is only a specific embodiment of the present invention, but the structural features of the present invention are not limited thereto. Any changes or modifications made by any technician in the field of the present invention are included in the patent scope of the present invention.

Claims

1. A process for replacing a polishing pad and repairing a polishing pad, characterized in that The steps are as follows: Step 1: Clean the plate thoroughly, then rinse it with water for 3 minutes, wipe it clean with a dust-free cloth, and then wipe it again with isopropyl alcohol until the plate is completely dry; Step 2: Fit the polishing pad evenly to the surface of the fixed plate without pulling it hard; Step 3: Adjust the rotating speed of the fixed plate to 30 rpm, and use the Teflon pressure rod to gradually press the polishing cloth from the center of the fixed plate to the outside; Step 4: Use a utility knife to cut off the excess polishing pad at the edge; Step 5: The polishing pad needs to be pre-treated before polishing. For the rough polishing pad, first use high-pressure pure water to brush it 3 times, then use the diamond brush to repair the cloth for 5 minutes at a speed of 30rpm; Step 6: Use a disc brush to brush for 15 minutes, and finally rinse with high-pressure water twice; Step 7: Perform final polishing with a polishing pad and scrub; Step 8: After the cloth pasting and repairing are completed, the silicon wafer polishing operation is carried out.

2. The process for replacing and repairing the polishing pad according to claim 1, characterized in that: Start sticking the polishing pad from one side, then use a Teflon round rod to gradually roll it to the other side until the other side is completely stuck. No bubbles should appear between the polishing pad and the fixed plate.

3. The process for replacing and repairing the polishing pad according to claim 1, characterized in that: While the fixed plate rotates, a proper amount of ultrapure water is sprayed with a Teflon pressure rod. The pure water flow rate is 7L / min and the pure water flow rate error is ±1L / min.

4. The process for replacing and repairing the polishing pad according to claim 1, characterized in that: The polishing pad was polished by hand brushing the polishing pad with TSC-1 solution for 5 minutes to wet the polishing pad.

5. The process for replacing and repairing the polishing pad according to claim 4, characterized in that: After wetting the polishing pad, use the polishing liquid to brush for 15 minutes, and finally rinse it twice with high-pressure water.