Method for controlling oxygen defect content of hafnium-based ferroelectric film

Abstract

The invention relates to a hafnium-based ferroelectric film oxygen defect content control method. The method comprises the following steps: preparing hafnium-based ferroelectric film preparation raw materials; setting at least one growth oxygen regulation and control parameter; preparing the hafnium-based ferroelectric film by using the hafnium-based ferroelectric film preparation raw material according to the growth oxygen regulation and control parameters; setting annealing oxygen regulation and control parameters; carrying out annealing operation on the hafnium-based ferroelectric film according to the annealing oxygen regulation and control parameters; setting re-annealing oxygen regulation and control parameters; and carrying out secondary annealing operation on the hafnium-based ferroelectric film according to the secondary annealing oxygen regulation and control parameter. According to the hafnium-based ferroelectric film oxygen defect content control method provided by the invention, the internal oxygen content of the device is effectively regulated and controlled from three aspects of growth oxygen, annealing oxygen and re-annealing oxygen, the back-end process manufacturing process is met, and research and development of a hafnium-based ferroelectric storage chip are facilitated.

Description

Technical Field

[0001] The invention relates to the technical field of oxygen defect content control, and in particular to a method for controlling the oxygen defect content of a hafnium-based ferroelectric film. Background Art

[0002] When using ALD (atomic layer deposition) to prepare oxides, nitrides and other thin film materials, the content and distribution of oxygen, nitrogen and other elements in the film play a decisive role in the performance of the film. In particular, the element content during layer-by-layer deposition plays a key role in the formation of local, internal and interface phase structures and defect distribution, which in turn affects the device phase structure. Therefore, how to adjust the element content of each layer, especially the oxygen content, is an important research direction.

[0003] The existing deposition methods cannot achieve layer-by-layer (about 0.1nm, atomic layer) regulation of oxygen content in the film (0-100% content), and cannot precisely regulate oxygen defects. In addition, different oxygen source materials will provide oxygen with different valences, and the oxygen content of the film deposited by combining oxygen with precursors with different valences is different, and the oxygen defect concentration is also different. These affect the formation of phase structure, defect concentration and distribution, and device reliability.

[0004] The crystallization of hafnium-based ferroelectric thin films requires rapid annealing (RTA), and the oxygen atmosphere during the annealing process is also very important. The pressure of existing rapid annealing methods is usually around 100 Pa, and only the atmosphere (oxygen, nitrogen, argon or mixed gas) can be changed, but pressure is not studied as an important influencing factor.

[0005] The formation of hafnium oxide ferroelectric phase requires a certain amount of oxygen defects, so oxygen defects are an important factor affecting ferroelectric properties. However, there is currently no very suitable and convenient method to control the content of single atomic layers of elements during atomic layer deposition, especially for the regulation of oxygen content at the electrode / ferroelectric interface. Summary of the invention

[0006] In view of this, the present invention provides a method for controlling the oxygen defect content of a hafnium-based ferroelectric thin film.

[0007] Specifically, the present invention is achieved through the following technical solutions:

[0008] According to a first aspect of the present invention, a method for controlling oxygen defect content in a hafnium-based ferroelectric thin film is provided, the method comprising the steps of:

[0009] Prepare raw materials for preparing hafnium-based ferroelectric thin films;

[0010] Setting at least one growth oxygen regulation parameter;

[0011] Prepare a hafnium-based ferroelectric thin film using the hafnium-based ferroelectric thin film preparation raw material according to the growth oxygen control parameter;

[0012] Set annealing oxygen control parameters;

[0013] Performing an annealing operation on the hafnium-based ferroelectric thin film according to the annealing oxygen control parameters;

[0014] Set the re-annealing oxygen control parameters;

[0015] The hafnium-based ferroelectric thin film is subjected to a re-annealing operation according to the re-annealing oxygen control parameter.

[0016] Optionally, the step of preparing raw materials for hafnium-based ferroelectric thin film comprises the following steps:

[0017] Configure the substrate;

[0018] Configure electrodes;

[0019] Configure the precursor;

[0020] Configure at least one oxygen source (oxygen sources include H2O, H2O2, O2, O3, etc.).

[0021] Optionally, the step of setting at least one growth oxygen regulation parameter comprises the following steps:

[0022] Set the number of precursor-nitrogen cycles;

[0023] Setting at least one oxygen source cycle parameter for each deposition layer;

[0024] Set the precursor oxygen source content;

[0025] The content of at least one oxygen source is set for each deposited layer.

[0026] Optionally, the step of setting at least one oxygen source cycle parameter for each deposition layer comprises the steps of:

[0027] Set the number of oxygen source cycle pulses for each deposition layer;

[0028] Set the oxygen source circulation flow rate for each deposition layer;

[0029] Set the oxygen source cycle pulse time for each deposition layer.

[0030] Optionally, the step of preparing a hafnium-based ferroelectric thin film using the hafnium-based ferroelectric thin film preparation raw material according to the growth oxygen control parameter comprises the following steps:

[0031] Obtain substrates, electrodes, precursors, and an oxygen source;

[0032] depositing a bottom electrode on the substrate using the electrode;

[0033] Depositing deposition layers layer by layer on the bottom electrode using the precursor and the oxygen source;

[0034] depositing a top electrode on the deposition layer using the electrode;

[0035] The bottom electrode and the top electrode are patterned.

[0036] Optionally, the step of setting the annealing oxygen control parameters comprises the following steps:

[0037] Set annealing pressure;

[0038] Set the annealing time;

[0039] Set the first annealing temperature.

[0040] Optionally, the first annealing temperature is 350-600°C.

[0041] Optionally, the setting of the re-annealing oxygen control parameters comprises the steps of:

[0042] Set annealing pressure;

[0043] Set the annealing time;

[0044] Set the second annealing temperature.

[0045] Optionally, the second annealing temperature is 250-600°C.

[0046] Optionally, the annealing pressure is 0.001-100000 Pa, and the annealing time is 10s-3h.

[0047] The technical solution provided by the present invention brings at least the following beneficial effects:

[0048] The present application provides a method for controlling the oxygen defect content in a hafnium-based ferroelectric thin film, which realizes layer-by-layer regulation of the oxygen content in the film to obtain a film structure with different oxygen gradients; realizes atomic layer regulation of the phase structure, defect distribution, etc. in the film to improve the consistency and reliability of two-dimensional or three-dimensional devices; by adjusting the oxygen content in the rapid annealing process, the oxygen defects in the crystallization process are re-regulated to obtain a ferroelectric film with different oxygen contents (0-100%); the device that has failed in the back-end thermal process is rapidly annealed again to change the oxygen content level in the film, so that the oxygen defects and ferroelectric properties are restored to the initial optimal state; the oxygen content inside the device is effectively regulated from three aspects: growth oxygen, annealing oxygen, and re-annealing oxygen to meet the back-end process manufacturing process, which is beneficial to the research and development of hafnium-based ferroelectric memory chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention.

[0050] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0051] Figure 1 A schematic flow chart of a method for controlling oxygen defect content in a hafnium-based ferroelectric thin film provided in an embodiment of the present invention;

[0052] Figure 2 A schematic diagram of a method for controlling oxygen defect content in a hafnium-based ferroelectric film provided by an embodiment of the present invention, using hafnium tetrakisbisethylmethylammonium (Zr[N(C2H5)CH3]4) and zirconium tetrakisbisethylmethylammonium (Hf[N(C2H5)CH3]4) as precursors to perform an ALD cycle of growing HZO thin films;

[0053] Figure 3 A schematic structural diagram of a first embodiment of a hafnium-based ferroelectric film in a method for controlling oxygen defect content in a hafnium-based ferroelectric film provided in an embodiment of the present invention, wherein oxygen source 1 and oxygen source 2 may be any one of H2O, H2O2, O2, and O3;

[0054] Figure 4 for Figure 3 Schematic diagram of the imprinting effect when recycled water is used as an oxygen source;

[0055] Figure 5 for Figure 3 Schematic diagram of the imprinting effect when oxygen is used as the oxygen source;

[0056] Figure 6 A schematic structural diagram of a second embodiment of a hafnium-based ferroelectric film in a method for controlling oxygen defect content in a hafnium-based ferroelectric film provided by an embodiment of the present invention;

[0057] Figure 7 for Figure 6 Schematic diagram of the relationship between polarization intensity and voltage of hafnium-based ferroelectric thin films;

[0058] Figure 8 A schematic structural diagram of a third embodiment of a hafnium-based ferroelectric thin film in a method for controlling oxygen defect content in a hafnium-based ferroelectric thin film provided by an embodiment of the present invention;

[0059] Fig. 9 for Figure 8 Schematic diagram of the relationship between polarization spinor charge and cycle number of hafnium-based ferroelectric films;

[0060] Fig.10 A schematic diagram of annealing oxygen regulation during annealing of a hafnium-based ferroelectric film in a method for controlling oxygen defect content in a hafnium-based ferroelectric film provided by an embodiment of the present invention;

[0061] Fig.11 for Fig.10 Schematic diagram of the relationship between polarization intensity and voltage of hafnium-based ferroelectric thin films;

[0062] Fig.12 A schematic diagram of adjusting the annealing oxygen pressure of a hafnium-based ferroelectric film again after the back-end process thermal effect in a method for controlling oxygen defect content of a hafnium-based ferroelectric film provided by an embodiment of the present invention;

[0063] Fig.13 for Fig.12 Schematic diagram of the relationship between polarization intensity and voltage of hafnium-based ferroelectric films. DETAILED DESCRIPTION

[0064] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0065] Figure 1 The flowchart of a method for controlling oxygen defect content in a hafnium-based ferroelectric thin film applicable to an embodiment of the present invention is schematically shown.

[0066] Reference Figure 1 As shown, the present application provides a method for controlling the oxygen defect content of a hafnium-based ferroelectric film, the method comprising the steps of:

[0067] S1: preparing raw materials for hafnium-based ferroelectric thin films;

[0068] Exemplarily, the step of preparing raw materials for hafnium-based ferroelectric thin films comprises the following steps:

[0069] Configure the substrate;

[0070] Configure electrodes;

[0071] Configure the precursor;

[0072] At least one oxygen source is provided.

[0073] In the embodiments of the present application, electrode materials compatible with CMOS (complementary metal oxide semiconductor) processes are selected, such as Si, Ge semiconductor wafers, W, TiN, TaN, Al, Cu and other conductive metals / nitrides, or Au / W, Si / Ge, Ti / Ni and other alloy materials. It is necessary to ensure good flatness and low roughness of the substrate to ensure that the device is not easy to break down or obtain a lower leakage current, which is conducive to electrical characterization of the device.

[0074] S2: setting at least one growth oxygen regulation parameter;

[0075] Exemplarily, the step of setting at least one growth oxygen regulation parameter comprises the following steps:

[0076] Set the number of precursor-nitrogen cycles;

[0077] Setting at least one oxygen source cycle parameter for each deposition layer;

[0078] Set the precursor oxygen source content;

[0079] The content of at least one oxygen source is set for each deposited layer.

[0080] In an embodiment of the present application, the number of precursor-nitrogen cycles is set (one precursor and one nitrogen purge is considered as a cycle), the number of pulses, time and flow rate of each layer of oxygen source cycle is set (the number of cycles is from 0-30, the duration is from 0-200s, and the flow rate is from 10-500sccm) (one precursor oxygen source and one nitrogen purge is considered as a cycle), the precursor content and the oxygen source content of each deposition layer are set, so as to realize separate control of the oxygen source in the entire deposition process.

[0081] Exemplarily, the step of setting at least one oxygen source cycle parameter for each deposition layer comprises the steps of:

[0082] Set the number of oxygen source cycle pulses for each deposition layer;

[0083] Set the oxygen source circulation flow rate for each deposition layer;

[0084] Set the oxygen source cycle pulse time for each deposition layer.

[0085] In the embodiment of the present application, by setting the number of oxygen pulses and the oxygen pulse time in each cycle, the oxygen content of each layer is regulated, and the element content of a single atomic layer (~0.1nm) is regulated, thereby designing a film with different gradient oxygen contents according to application requirements.

[0086] In the embodiment of the present application, Hf is deposited 0.5 Zr 0.5 Take O2(HZO) as an example (Hf[N(CH3)2]4 and Zr[N(CH3)2]4 are precursors, and H2O is the oxygen source). After depositing a layer of Hf[N(CH3)2]4 or Zr[N(CH3)2]4, the number of H2O pulses, time and flow rate are changed (to achieve regulation of the oxygen content in this layer). Then, after depositing another layer of Hf[N(CH3)2]4 or Zr[N(CH3)2]4, the number of H2O pulses, time and flow rate are changed again. By analogy, the gradient (layer-by-layer) regulation of the initial oxygen content in the film can be achieved.

[0087] S3: preparing a hafnium-based ferroelectric thin film using the hafnium-based ferroelectric thin film preparation raw material according to the growth oxygen control parameter;

[0088] Exemplarily, the step of preparing a hafnium-based ferroelectric thin film using the hafnium-based ferroelectric thin film preparation raw material according to the growth oxygen control parameter comprises the following steps:

[0089] Obtain substrates, electrodes, precursors, and an oxygen source;

[0090] depositing a bottom electrode on the substrate using the electrode;

[0091] Depositing deposition layers layer by layer on the bottom electrode using the precursor and the oxygen source;

[0092] depositing a top electrode on the deposition layer using the electrode;

[0093] The bottom electrode and the top electrode are patterned.

[0094] In an embodiment of the present application, a bottom electrode is deposited on a substrate by using methods such as ALD (atomic layer deposition) and PVD (physical vapor deposition), a top electrode is grown after atomic layer deposition, and the electrode is patterned by processes such as photolithography and etching to form a capacitor with a two-dimensional or three-dimensional structure.

[0095] In the embodiment of the present application, the HZO film is prepared by ALD in a cyclic process as follows: Figure 2 As shown. Hafnium tetrakis diethylmethylammonium (Hf[N(C2H5)CH3]4) and zirconium tetrakis diethylmethylammonium (Hf[N(C2H5)CH3]4) are used as precursors, and H2O is used as an oxygen source or reducing agent. The liquid Hf and Zr sources are converted into gases by heating, and then combined and reacted with the hydroxyl groups on the substrate surface, such as Figure 2 As shown; the precursor is combined with the surface without completely decomposing. During the N2 gas purge, two NMe2-H are removed, leaving O-Zr-NMe2, as shown in 1(b); then an oxygen source is introduced to react with the O-Zr-NMe2 left on the surface, as shown in Figure 2 (c) As shown; through reaction and replacement, the remaining reaction products are blown away under the action of N2, leaving HO-Zr-O, such as Figure 2 As shown in (d), this is a complete cycle.

[0096] Repeat the above operation again by passing Hf source. Figure 2 This is the growth of a cycle of Hf and Zr. The growth rate and crystallinity of HZO are regulated according to the temperature of the substrate. The growth rate of Hf and Zr in a cycle is generally / cycle, different doping ratios can be achieved according to different numbers of cycles. The oxygen content can be changed in this cycle (oxygen sources include oxygen, ozone, water, and hydrogen peroxide), and the oxygen content of each layer can be controlled by controlling the flow rate (10-500sccm) and pulse time (0.1s-500s). In addition, multiple oxygen sources can be introduced during one cycle, which can further optimize and improve the quality of the oxygen source. Because there is tri-coordinated oxygen in the hafnium-based ferroelectric lattice, there must be a certain amount of oxygen defects in the film, and the oxygen content of the film during the deposition process can be further optimized and adjusted directly according to the oxygen content in the film and the changes in the ferroelectric properties of the hafnium-based film.

[0097] S4: setting annealing oxygen control parameters;

[0098] Exemplarily, the step of setting the annealing oxygen control parameters comprises the following steps:

[0099] Set annealing pressure;

[0100] Set the annealing time;

[0101] Set the first annealing temperature.

[0102] In the embodiments of the present application, the rapid annealing pressure (0.001Pa to 100000Pa), annealing time (10s-3hours) and annealing temperature (350-600°C) are changed, so as to further regulate the oxygen content in the film by the annealing pressure during the film crystallization process; by changing the growth oxygen content and the pressure during the annealing process, the oxygen content in the film after crystallization can be adjusted from 0 to 100%.

[0103] S5: performing an annealing operation on the hafnium-based ferroelectric thin film according to the annealing oxygen control parameter;

[0104] In the embodiment of the present application, the annealing operation is performed according to the annealing oxygen control parameters.

[0105] S6: setting re-annealing oxygen control parameters;

[0106] Exemplarily, the setting of the re-annealing oxygen control parameters comprises the steps of:

[0107] Set annealing pressure;

[0108] Set the annealing time;

[0109] Set the second annealing temperature.

[0110] In an embodiment of the present application, the device undergoes a post-heat process at 400 degrees for 3 hours, and is then rapidly annealed again with changes in pressure (0.001Pa to 100000Pa), annealing time (10s-3hours), and annealing temperature (250-600°C), thereby achieving further regulation of the oxygen content in the failed ferroelectric film and restoring the oxygen level and ferroelectric properties.

[0111] S7: performing a re-annealing operation on the hafnium-based ferroelectric thin film according to the re-annealing oxygen control parameters.

[0112] In the embodiment of the present application, the re-annealing operation is performed according to the re-annealing oxygen control parameters.

[0113] like Figure 3-5 As shown, when the hafnium-based ferroelectric film is grown with oxygen regulation, the two oxygen sources are in different layers (for example, water is used in the lower layer and oxygen is used in the upper layer). At this time, the imprint effect can be weakened and the polarization retention characteristics can be improved.

[0114] like Figure 6-7 As shown, when the hafnium-based ferroelectric film is grown with oxygen regulation, the two oxygen sources are in the same layer, but the content is variable, and the oxygen content in each layer is different. At this time, the advantages of the two oxygen sources can be used to improve the oxygen distribution and enhance the polarization strength.

[0115] like Figure 8-9 As shown, when the hafnium-based ferroelectric film is oxygen-regulated during growth, since interface oxygen loss is the main obstacle leading to device breakdown, increasing the interface oxygen content can greatly increase the number of device cycles.

[0116] like Figure 10-11 As shown, when the hafnium-based ferroelectric film is annealed for oxygen regulation, a constant pressure value is set, followed by a temperature rise and fall process to achieve regulation of the film's oxygen content during the annealing process. By measuring the oxygen content in the growing film, the annealing pressure can be increased or decreased so that the film can absorb / release oxygen during the crystallization process.

[0117] like Figure 12-13 As shown, when the annealing oxygen pressure of the hafnium-based ferroelectric film is adjusted again after the back-end process thermal effect, the back-end process thermal effect (Furance) will cause the oxygen content inside the film to increase, resulting in ferroelectric domain pinning, which in turn leads to serious decrease in polarization charge and slow flipping speed. By reducing the pressure (0.01Pa) during re-annealing, the ferroelectric performance can be restored.

[0118] The method for controlling oxygen defect content in a hafnium-based ferroelectric film provided in this application has the following advantages:

[0119] Multi-level oxygen regulation: This method achieves multi-level and refined control of the oxygen defect content in hafnium-based ferroelectric films through oxygen regulation in three stages: growth, initial annealing, and re-annealing.

[0120] Optimizing ferroelectric properties: By precisely controlling the oxygen defect content, this method is expected to significantly improve the ferroelectric properties of hafnium-based ferroelectric films, providing strong support for the development of high-performance electronic devices.

[0121] Response to technical challenges: This method provides a practical solution to the problem of regulating element content in the atomic layer deposition process, with high technical innovation and practicality.

[0122] The present application provides a method for controlling the oxygen defect content of a hafnium-based ferroelectric film, which realizes the layer-by-layer regulation of the oxygen content in the film to obtain a film structure with different oxygen gradients; realizes the atomic layer regulation of the phase structure, defect distribution, etc. in the film, and improves the consistency and reliability of two-dimensional or three-dimensional devices; by adjusting the oxygen content in the rapid annealing process, the oxygen defects in the crystallization process are re-regulated to obtain a ferroelectric film with different oxygen contents (0-100%); the device that has failed after the back-end thermal process is rapidly annealed again to change the oxygen content level in the film, so that the oxygen defects and ferroelectric properties are restored to the initial optimal state; the oxygen content inside the device is effectively regulated from three aspects: growth oxygen, annealing oxygen, and re-annealing oxygen, to meet the back-end process manufacturing process, which is conducive to the research and development of hafnium-based ferroelectric memory chips. The method has high technical innovation and application value in the field of electronic material preparation, and provides strong support for the development of new electronic devices.

[0123] It should be noted that, in the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0124] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in this application can be understood according to specific circumstances.

[0125] In addition, the terms "installed", "set", "provided with", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0126] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.

[0127] The foregoing is merely a specific embodiment of the present invention, which enables those skilled in the art to understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A method for controlling oxygen defect content in a hafnium-based ferroelectric thin film, characterized in that: The method comprises the steps of: Prepare raw materials for preparing hafnium-based ferroelectric thin films; Setting at least one growth oxygen regulation parameter; Prepare a hafnium-based ferroelectric thin film using the hafnium-based ferroelectric thin film preparation raw material according to the growth oxygen control parameter; Set annealing oxygen control parameters; Performing an annealing operation on the hafnium-based ferroelectric thin film according to the annealing oxygen control parameters; Set the re-annealing oxygen control parameters; The hafnium-based ferroelectric thin film is subjected to a re-annealing operation according to the re-annealing oxygen control parameter.

2. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 1, characterized in that: The preparation of the raw materials for the hafnium-based ferroelectric thin film comprises the following steps: Configure the substrate; Configure electrodes; Configure the precursor; At least one oxygen source is provided.

3. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 1, characterized in that: The step of setting at least one growth oxygen regulation parameter comprises the following steps: Set the number of precursor-nitrogen cycles; Setting at least one oxygen source cycle parameter for each deposition layer; Set the precursor oxygen source content; The content of at least one oxygen source is set for each deposited layer.

4. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 3, characterized in that: The step of setting at least one oxygen source circulation parameter for each deposition layer comprises the following steps: Set the number of oxygen source cycle pulses for each deposition layer; Set the oxygen source circulation flow rate for each deposition layer; Set the oxygen source cycle pulse time for each deposition layer.

5. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 1, characterized in that: The method of preparing the hafnium-based ferroelectric thin film using the hafnium-based ferroelectric thin film preparation raw material according to the growth oxygen control parameter comprises the following steps: Obtain substrates, electrodes, precursors, and an oxygen source; depositing a bottom electrode on the substrate using the electrode; Depositing deposition layers layer by layer on the bottom electrode using the precursor and the oxygen source; depositing a top electrode on the deposition layer using the electrode; The bottom electrode and the top electrode are patterned.

6. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 1, characterized in that: The step of setting the annealing oxygen control parameters comprises the following steps: Set annealing pressure; Set the annealing time; Set the first annealing temperature.

7. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 6, characterized in that: The first annealing temperature is 350-600°C.

8. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 1, characterized in that: The setting of the re-annealing oxygen control parameters comprises the steps of: Set annealing pressure; Set the annealing time; Set the second annealing temperature.

9. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 8, characterized in that: The second annealing temperature is 250-600°C.

10. The method for controlling oxygen defect content in a hafnium-based ferroelectric thin film according to claim 6 or 8, characterized in that: The annealing pressure is 0.001-100000 Pa, and the annealing time is 10s-3h.

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