Perovskite laminated cell and manufacturing method thereof
By forming a concave and convex structure on the transparent conductive oxide layer of the perovskite laminate battery and embedding the metal gate line, the contact resistance problem between the metal gate line and the transparent conductive oxide layer is solved, and the efficiency of the battery is improved.
Patent Information
- Application Number
- CN202411814642.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2025-03-14
AI Technical Summary
In perovskite stacked batteries, the contact resistance between the metal gate lines and the transparent conductive oxide film is large, resulting in an increase in series resistance and affecting the battery efficiency.
By opening grooves on the top surface of the transparent conductive oxide layer or performing roughening treatment, an uneven structure is formed, and the bottom of the metal gate line is embedded or attached to this structure, the contact area between the metal gate line and the transparent conductive oxide layer is increased.
The contact resistance between the metal gate line and the transparent conductive oxide layer is reduced, the conductivity is improved, and the efficiency of the perovskite stacked battery is enhanced.
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Figure CN119630171A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite stacked cell and a method for manufacturing the same. Background Art
[0002] Organic-inorganic hybrid perovskite solar cells have continued to increase in efficiency due to their excellent optoelectronic properties, such as high light absorption coefficient, long carrier diffusion length and high defect tolerance. In just over a decade, the certified efficiency has increased from 3.8% to 26.1%. At the same time, since the perovskite band gap is adjustable, the efficiency of the four-terminal perovskite / silicon stacked cell formed by perovskite as the top cell and silicon as the bottom cell has also exceeded 34% due to its matching absorption of the sunlight spectrum.
[0003] Currently, the metallization of perovskite stacked cells mostly uses evaporated metal grid lines in contact with transparent conductive oxide films to achieve charge collection. However, due to the large contact resistance between metal and transparent conductive oxide, a large series resistance is caused, which in turn affects the cell efficiency. Summary of the invention
[0004] Based on this, it is necessary to provide a perovskite stacked cell and a method for manufacturing the same to address the problem of large contact resistance between the metal grid line and the transparent conductive oxide film.
[0005] According to one aspect of the present application, a perovskite stacked cell comprises, from bottom to top, a crystalline silicon cell body and a perovskite cell body, wherein a transparent conductive oxide layer is provided on the top of the perovskite cell body, a metal grid line is provided on the top surface of the transparent conductive oxide layer, the bottom of the metal grid line is embedded in the transparent conductive oxide layer, and / or the bonding surface between the bottom of the metal grid line and the top surface of the transparent conductive oxide layer is a concave-convex structure.
[0006] In some embodiments, a groove is formed on the top surface of the transparent conductive oxide layer, and the bottom of the metal grid line is embedded in the groove.
[0007] In some embodiments, the groove passes through the transparent conductive oxide layer, and the metal grid line passes through the transparent conductive oxide layer.
[0008] In some embodiments, the bottom surface of the groove is a concave-convex structure, and the bottom of the metal grid line is attached to the bottom surface of the groove.
[0009] In some embodiments, part of the metal grid line is buried in the transparent conductive oxide layer.
[0010] In some embodiments, the material of the transparent conductive oxide layer is one or more combinations of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, antimony-doped tin oxide, aluminum-doped zinc oxide or zinc oxide, and the material of the metal grid electrode is one or more combinations of silver paste, copper paste or silver-coated copper paste.
[0011] According to another aspect of the present application, a method for manufacturing a perovskite stack cell, the perovskite stack cell includes a crystalline silicon cell body and a perovskite cell body in order from bottom to top, and the method includes: forming a transparent conductive oxide layer and a metal grid line on the top of the perovskite cell body, and the bottom of the metal grid line is embedded in the transparent conductive oxide layer; and / or the bonding surface between the bottom of the metal grid line and the top surface of the transparent conductive oxide layer is a concave-convex structure.
[0012] In some embodiments, the method includes: preparing a transparent conductive oxide layer on top of the perovskite cell body; opening a groove on the top surface of the transparent conductive oxide layer, or roughening the top surface of the transparent conductive oxide layer using a laser process to form a concave-convex area; depositing a metal material in the groove or on the concave-convex area and forming the metal grid line.
[0013] In some embodiments, the method includes: depositing a metal material on top of the perovskite cell body and forming a first gate line; forming a transparent conductive oxide layer on the first gate line; and depositing a metal material on the transparent conductive oxide layer and forming a second gate line.
[0014] In some embodiments, depositing a metal material on the transparent conductive oxide layer and forming a second gate line includes: opening a groove on the top surface of the transparent conductive oxide layer, or roughening the top surface of the transparent conductive oxide layer using a laser process to form a concave-convex area; depositing a metal material in the groove or on the concave-convex area and forming the second gate line.
[0015] In the present application, the bottom of the metal grid line is embedded in the transparent conductive oxide layer, or the bonding surface between the bottom of the metal grid line and the top surface of the transparent conductive oxide layer is a concave-convex structure; thereby, there is a larger contact area between the metal grid line and the transparent conductive oxide layer, which reduces the contact resistance between the two, increases the conductivity, and improves the efficiency of the perovskite stacked battery. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 This is a schematic diagram of the cross-sectional structure of the perovskite tandem battery of Example 1 of the present application.
[0017] Figure 2 This is a schematic diagram of the cross-sectional structure of the perovskite tandem battery of Example 2 of the present application.
[0018] Figure 3 This is a schematic diagram of the cross-sectional structure of the perovskite tandem battery of Example 3 of the present application.
[0019] Figure 4 This is a schematic diagram of the cross-sectional structure of the perovskite tandem battery of Example 4 of the present application.
[0020] Figure 5 This is a schematic diagram of the cross-sectional structure of the perovskite tandem battery of Example 5 of the present application.
[0021] Figure 6 This is a schematic top view of the perovskite tandem cell of Example 5 of the present application.
[0022] Figure 7 This is a flow chart of the method for manufacturing the perovskite tandem battery of the present application.
[0023] Figure 8 Schematic diagram of the process of making transparent conductive oxide layer and metal grid line Figure 1 .
[0024] Fig. 9 Schematic diagram of the process of making transparent conductive oxide layer and metal grid line Figure 2 .
[0025] Fig.10 Schematic diagram of the process of making transparent conductive oxide layer and metal grid line Figure 3 .
[0026] Reference numerals:
[0027] 100, perovskite stacked battery; 10, crystalline silicon battery cell body; 11, composite layer; 20, perovskite battery body; 210, hole transport layer; 220, perovskite active layer; 230, electron transport layer; 240, buffer layer; 30, transparent conductive oxide layer; 310, top surface; 320, groove; 321, concave-convex structure; 40, metal grid line; 410, first grid line; 420, second grid line; 50, bonding surface; 60, main grid line. DETAILED DESCRIPTION
[0028] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.
[0029] In the description of the present application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.
[0030] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of this application, if the term "plurality" appears, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0031] In this application, unless otherwise clearly specified and limited, if the terms "installed", "connected", "connected", "fixed" and the like appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integrated connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.
[0032] In the present application, unless otherwise clearly specified and limited, if there is a description that a first feature is "above" or "below" a second feature, etc., or similar descriptions appear, it may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Moreover, the first feature being "above", "above" and "above" the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. The first feature being "below", "below" and "below" the second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0033] Each embodiment of the present application provides a perovskite stacked cell 100. Figures 1 to 6 , respectively illustrate the cross-sectional schematic structures of the perovskite stacked cells 100 of multiple embodiments.
[0034] The perovskite stacked cell 100 includes a crystalline silicon cell body 10 and a perovskite cell body 20 from bottom to top, wherein a transparent conductive oxide layer 30 (TCO, Transparent Conductive Oxides) is provided on the top of the perovskite cell body 20. A metal grid line 40 is provided on the top surface 310 of the transparent conductive oxide layer 30, and the bottom of the metal grid line 40 is embedded in the transparent conductive oxide layer 30 (see Figures 1 to 3 ), and / or, the bonding surface 50 between the bottom of the metal grid line 40 and the top surface 310 of the transparent conductive oxide layer 30 is a concave-convex structure (see Figure 4 , Figure 5 ).
[0035] The crystalline silicon cell body 10 may specifically be a HJT (Heterojunction with Intrinsic Thin-film cell. A connection layer, such as a lipid flat layer, may be provided above the HJT cell. It should be noted that the crystalline silicon cell body 10 is not limited to being a HJT cell. For example, it may also be a Passivated Emitter Rear Cell (PERC), a Tunnel Oxide Passivated Contact (TOPCon), an intrinsic thin film heterojunction cell (Heterojunction with Intrinsic Thin-film, HJT), an interdigitated back contact cell (IBC), etc.
[0036] Optionally, the top of the crystalline silicon cell body 10 has a composite layer 11. The composite layer 11 forms an ohmic contact between the crystalline silicon cell body 10 and the perovskite cell body 20 to ensure that the current between the two can be smoothly transmitted.
[0037] Optionally, the perovskite cell body 20 includes, from bottom to top, a hole transport layer 210 , a perovskite active layer 220 , an electron transport layer 230 , and a buffer layer 240 . The transparent conductive oxide layer 30 is disposed above the buffer layer 240 .
[0038] Optionally, in the present application, the material of the transparent conductive oxide layer 30 is one or more combinations of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, antimony-doped tin oxide, aluminum-doped zinc oxide or zinc oxide, and the material of the metal grid line 40 electrode is one or more combinations of silver paste, copper paste or silver-coated copper paste. The material of the buffer layer 240 can be, for example, metal oxides such as zinc oxide and ytterbium oxide.
[0039] In the perovskite stack cell 100 of each embodiment of the present application, the metal grid line 40 is arranged in the transparent conductive oxide layer 30, and the bottom of the metal grid line 40 is embedded in the transparent conductive oxide layer 30, or the bonding surface 50 between the bottom of the metal grid line 40 and the top surface 310 of the transparent conductive oxide layer 30 is a concave-convex structure; thereby, there is a larger contact area between the metal grid line 40 and the transparent conductive oxide layer 30, which reduces the contact resistance between the two, increases the conductivity, and improves the efficiency of the perovskite stack cell 100.
[0040] The embodiments are further described in detail below with reference to the accompanying drawings.
[0041] Embodiment 1
[0042] like Figure 1 As shown, in the first embodiment, a groove 320 is formed on the top surface 310 of the transparent conductive oxide layer 30 , and the bottom of the metal grid line 40 is embedded in the groove 320 . Figure 1 In the figure, the metal gate line 40 is omitted in one of the grooves 320, so as to illustrate the groove 320 and a structure of the groove 320.
[0043] Specifically, a plurality of grooves 320 are provided at intervals on the top surface 310 of the transparent conductive oxide layer 30. The thickness of the transparent conductive oxide layer 30 ranges from 10 nm to 1000 nm. The groove width of the groove 320 ranges from 30 to 5000 um, the depth is less than the thickness of the transparent conductive oxide layer 30, and the distance between the grooves 320 ranges from 10 to 1000 mm. When preparing the metal grid lines 40, a material is deposited at the location of each groove 320 to form a plurality of metal grid lines 40 with the bottom embedded in the groove 320 and the top protruding from the top surface 310 of the transparent conductive oxide layer 30. For the bottom of the metal grid lines 40, the lower surface and the circumferential sidewalls thereof are in contact with the transparent conductive oxide layer 30, so that compared with the prior art in which only the lower surface of the metal grid lines 40 is attached to the transparent conductive oxide layer 30, the metal grid lines 40 of this embodiment have a larger contact area with the transparent conductive oxide layer 30, thereby increasing the conductivity and thus improving the efficiency of the perovskite stacked cell 100.
[0044] Embodiment 2
[0045] like Figure 2 As shown, the second embodiment is based on the first embodiment, the groove 320 penetrates the transparent conductive oxide layer 30, and the metal grid line 40 penetrates the transparent conductive oxide layer 30. In this way, the circumferential side area of the metal grid line 40 in contact with the transparent conductive oxide layer 30 is increased, and the metal grid line 40 and the transparent conductive oxide layer 30 have a larger contact area, which increases the conductivity and further improves the efficiency of the perovskite stacked cell 100.
[0046] It should be noted that in the second embodiment, the area of the increased circumferential side surface in contact with the transparent conductive oxide layer 30 should be set to be no less than the area of the lower surface of the metal grid line 40. In this way, the metal grid line 40 and the transparent conductive oxide layer 30 are further increased in contact with each other.
[0047] Embodiment 3
[0048] like Figure 3 As shown, the third embodiment is based on the first embodiment, and the bottom surface of the groove 320 is further configured as a concave-convex structure 321, and the bottom of the metal gate line 40 is attached to the concave-convex structure 321 of the bottom surface of the groove 320. The concave-convex structure 321 can be a wavy structure, but is not limited thereto.
[0049] Thus, on the basis of the first embodiment, the contact area between the lower surface of the metal grid line 40 and the transparent conductive oxide layer 30 is increased, which further reduces the contact resistance, further increases the conductivity, and further improves the efficiency of the perovskite stacked cell 100 .
[0050] Embodiment 4
[0051] like Figure 4 As shown, in this embodiment, the bottom of the metal grid line 40 is attached to the top surface 310 of the transparent conductive oxide layer 30, and the bonding surface 50 between the two is a concave-convex structure. Among them, the top surface 310 of the transparent conductive oxide layer 30 is formed with a plurality of concave-convex regions. The metal grid line 40 is formed by depositing a metal material on the concave-convex region.
[0052] When the metal grid lines 40 have the same size specifications, compared with the contact surface between the metal grid lines 40 and the transparent conductive oxide layer 30 being a plane, the metal grid lines 40 of this embodiment have a larger contact area with the transparent conductive oxide layer 30, thereby increasing the conductivity and improving the efficiency of the perovskite stacked cell 100.
[0053] Embodiment 5
[0054] like Figure 5 and Figure 6 As shown, the fifth embodiment is based on the fourth embodiment, and part of the metal grid line 40 is buried in the transparent conductive oxide layer 30. Specifically, the metal grid line 40 is further divided into a first grid line 410 and a second grid line 420, wherein the first grid line 410 is buried in the transparent conductive oxide layer 30. The second grid line 420 is located on the top surface of the transparent conductive oxide layer 30.
[0055] There are a plurality of first gate lines 410 and a plurality of second gate lines 420 . In the thickness direction of the transparent conductive oxide layer 30 , the positions of the first gate lines 410 and the second gate lines 420 correspond to each other one by one, but they may also be staggered.
[0056] The first grid line 410 is not visible when the perovskite stacked cell 100 is viewed from the outside. The first grid line 410 and the second grid line 420 are both connected to the main grid line 60 .
[0057] In addition, it should be pointed out that part of the metal grid line 40 is buried in the transparent conductive oxide layer 30 , which can also be obtained by modifying the first to third embodiments.
[0058] This application also proposes a method for manufacturing a perovskite stacked cell 100. Figure 1 As shown, the perovskite stacked cell 100 includes a crystalline silicon cell body 10 and a perovskite cell body 20 in order from bottom to top.
[0059] It is understandable that the method for manufacturing the perovskite stacked cell 100 has already prepared the crystalline silicon cell body 10 and the perovskite cell body 20 before preparing the transparent conductive oxide and the metal grid line 40. The preparation process of this part can adopt any suitable method in the prior art. The preparation process of this part is not the focus of this application and is also well known to those skilled in the art, so it will not be repeated.
[0060] refer to Figure 7 The method for manufacturing the perovskite stacked cell 100 of the present application includes:
[0061] S100, forming a transparent conductive oxide layer 30 and a metal grid line 40 on the top of the perovskite cell body 20, and the bottom of the metal grid line 40 is embedded in the transparent conductive oxide layer 30; and / or, the bonding surface 50 between the bottom of the metal grid line 40 and the top surface 310 of the transparent conductive oxide layer 30 is a concave-convex structure.
[0062] Compared with the prior art, by embedding the bottom of the metal grid line 40 into the transparent conductive oxide layer 30 and / or forming a concave-convex structure at the bonding surface 50 with the top surface 310 of the transparent conductive oxide layer 30, the metal grid line 40 and the transparent conductive oxide layer 30 have a larger contact area, thereby reducing the contact resistance between the two, increasing the conductivity, and improving the efficiency of the perovskite stacked cell 100. Several specific implementations of the manufacturing method of the present application are described below in conjunction with the accompanying drawings.
[0063] like Figure 8 As shown, combined with reference Figures 1 to 3 In one implementation, S100 specifically includes the following steps:
[0064] S110 , preparing a transparent conductive oxide layer 30 on the top of the perovskite cell body 20 .
[0065] Specifically, a conductive oxide thin film having a certain thickness is deposited on the buffer layer 240 on the top of the perovskite cell body 20 to form the transparent conductive oxide layer 30 .
[0066] Optionally, an indium zinc oxide material is deposited on the buffer layer 240 by magnetron sputtering to form a transparent conductive oxide layer 30. Optionally, a transparent conductive oxide film is formed on the surface of the buffer layer 240 by chemical vapor deposition (CVD). S120, a groove 320 is formed on the top surface 310 of the transparent conductive oxide layer 30, or a laser process is used to roughen the top surface 310 of the transparent conductive oxide layer 30 to form a concave-convex area.
[0067] Specifically, a laser grooving process is used to etch a conductive oxide film layer of a certain depth in a conductive oxide film of a certain thickness to form a groove 320. Alternatively, a laser process is used to roughen the conductive oxide film, for example, to form a wavy concave-convex area, thereby increasing the specific surface area of the conductive oxide film in contact with the metal gate line 40.
[0068] The shape of the concavo-convex region is not limited to the wavy shape. For example, the concavo-convex region may include a plurality of protrusions arranged at intervals, and the shape of the protrusions is rectangular, tower-shaped, irregular, etc. Optionally, a groove 320 penetrating the transparent conductive oxide layer 30 may be formed. Optionally, when the groove 320 is formed on the top surface 310 of the transparent conductive oxide layer 30, a concavo-convex structure 321 is simultaneously formed on the bottom surface of the groove.
[0069] S130 , depositing a metal material in the groove 320 or on the concave-convex area to form a metal gate line 40 .
[0070] Specifically, the area without the groove 320 is shielded by a mask, and then a material is deposited at the location of each groove 320 to form a plurality of metal grid lines 40 with the bottom embedded in the groove 320 and the top protruding from the top surface 310 of the transparent conductive oxide layer 30. Alternatively, a material is deposited at the location of each concave-convex area by a mask to form a metal grid line 40 attached to the concave-convex area. In this way, the bonding surface 50 between the metal grid line 40 and the transparent conductive oxide layer 30 is not a plane, but presents a concave-convex surface. At this time, according to the different shapes of the concave-convex areas on the transparent conductive oxide layer 30, the cross section of the bonding surface 50 can be a curve of any shape. For example, Fig. 9 As shown, in another implementation manner, S100 specifically includes the following steps:
[0071] S210 , depositing a metal material on the top of the perovskite cell body 20 and forming a first gate line 410 .
[0072] Specifically, a metal material is deposited on the buffer layer 240 on the top of the perovskite cell body 20 using a mask to form the first gate line 410 .
[0073] S220 , forming a transparent conductive oxide layer 30 on the first gate line 410 .
[0074] Specifically, a conductive material is deposited on the first gate lines 410 to form a transparent conductive oxide layer 30 . The transparent conductive oxide layer 30 covers each of the first gate lines 410 .
[0075] S230 , depositing a metal material on the transparent conductive oxide layer 30 and forming a second gate line 420 .
[0076] Specifically, a mask is used to deposit material on the transparent conductive oxide layer 30 to form the second gate line 410. As described above, in the thickness direction of the transparent conductive oxide layer 30, the first gate line 410 and the second gate line 420 correspond to each other, but can also be staggered.
[0077] In this way, the first gate line 410 is buried in the transparent conductive oxide layer 30 , thereby forming a structure in which a portion of the metal gate line is buried in the transparent conductive oxide layer 30 .
[0078] Furthermore, if Fig.10 As shown, step S230, depositing a metal material on the transparent conductive oxide layer 30 and forming a second gate line 420, specifically includes the following steps:
[0079] S231 , forming a groove 420 on the top surface of the transparent conductive oxide layer 30 , or roughening the top surface of the transparent conductive oxide layer 30 by laser processing to form a concave-convex area.
[0080] In this step, the method of opening the groove 420 or forming the concavo-convex area is the same as that described in step S120 and will not be repeated herein.
[0081] S232 , depositing a metal material in the groove or on the concave-convex area to form the second gate line 420 .
[0082] Specifically, the area without the groove 320 is shielded by a mask, and then a material is deposited at the location of each groove 320 to form a plurality of second gate lines 420 with the bottom embedded in the groove 320 and the top protruding from the top surface 310 of the transparent conductive oxide layer 30. Alternatively, the area without the roughening treatment is shielded by a mask, and then a material is deposited at the location of each concave-convex area to form a second gate line 420 attached to the concave-convex area.
[0083] In this way, among the formed metal grid lines 40, the first grid lines 410 are buried in the transparent conductive oxide layer 30, and have a larger contact area with the transparent conductive oxide layer 30. Compared with all the grid lines being arranged in the transparent conductive oxide layer 30, the metal grid lines 40 of the structure of the present application have a larger contact area with the transparent conductive oxide layer 30, a smaller contact resistance therebetween, and a stronger conductivity, thereby being able to improve the efficiency of the perovskite stacked cell 100.
[0084] The advantages of the perovskite stacked cells in the embodiments of the present application are further explained below in combination with some specific preparation examples and related comparative examples.
[0085] Figure 1 A preparation process of the perovskite tandem cell of Example 1 is as follows:
[0086] 1. Deposit a 20 nm indium zinc oxide conductive oxide film as the intermediate composite layer 11 on the crystalline silicon cell body 10 (specifically a heterogeneous crystalline silicon cell / tunneling oxide passivation layer crystalline silicon cell).
[0087] 2. A hole transport layer 210 , a perovskite layer 220 , an electron transport layer 330 and a buffer layer 240 are sequentially deposited on the intermediate composite layer 11 .
[0088] 3. Deposit 100 nm of indium tin oxide on the buffer layer 240 as the transparent conductive oxide layer 30 .
[0089] 4. The transparent conductive oxide layer 30 is grooved by a laser groove process to form grooves 320. The groove 320 has a groove width of 100um, a groove 320 depth of 50nm, and a distance between the grooves 320 of 30mm. The laser type includes but is not limited to one or more of ultraviolet picosecond, green picosecond and infrared nanosecond, and the power range is between 0.1w-10w.
[0090] 5. Use a mask to physically shield the ungrooved transparent conductive oxide layer 30, and deposit materials at the grooves 320 by vacuum evaporation, screen printing, or magnetron sputtering to form metal grid lines 40, with a thickness of 1000 nm. It should be noted that the thickness of the metal grid lines 40 needs to be greater than the depth of the grooves 320.
[0091] Figure 2 A preparation process of the perovskite tandem cell of Example 2 is as follows:
[0092] The difference between the preparation process of Example 2 and the preparation process of Example 1 is that in step 4, the groove 320 is subjected to secondary processing.
[0093] Specifically, the bottom surface of the groove 320 is further roughened to a roughness of 0.1-10 um. The roughening process includes but is not limited to one or more combinations of laser processing, wet chemical etching and photolithography.
[0094] Figure 3 A preparation process of the perovskite tandem cell of Example 3 is as follows:
[0095] The preparation process of Example 3 is different from that of Example 1 in that in step 4, when the transparent conductive oxide layer 30 is grooved, the depth of the groove 320 is consistent with the thickness of the transparent conductive oxide layer 30 .
[0096] Figure 4 A preparation process of the perovskite tandem cell of Example 4 is as follows:
[0097] The preparation process of Example 4 is compared with the preparation process of Example 1. The difference is:
[0098] The process of performing groove processing on the transparent conductive oxide layer 30 in step 4 is replaced by step 4A: performing roughening processing on the top surface of the transparent conductive oxide layer 30, with a roughness between 0.1-10 um.
[0099] In addition, step 5 is replaced by step 5A: depositing material in the roughened area by vacuum evaporation, screen printing, magnetron sputtering or the like to form metal gate lines 40, and the thickness of the metal gate lines 40 is 1000 nm.
[0100] Figure 5 A preparation process of the perovskite tandem cell of Example 5 is as follows:
[0101] Steps 1 and 2 are the same as steps 1 and 2 of Example 1.
[0102] 3. Using a mask plate, vacuum evaporation, screen printing, magnetron sputtering, etc., deposit materials on the buffer layer 240 to form the first gate line 410. The width of the first gate line 410 is 100 um, and the thickness of the first gate line 410 is 30 nm. The thickness of the first gate line 410 should be less than the thickness of the transparent conductive oxide layer 30.
[0103] 4. Deposit 100 nm of indium tin oxide on the buffer layer 240 as the transparent conductive oxide layer 30 .
[0104] 5. The top surface of the transparent conductive oxide layer 30 is roughened to a roughness between 0.1 and 10 μm.
[0105] 6. Depositing material at the roughened area by vacuum evaporation, screen printing, magnetron sputtering, etc. to form second gate lines 420 , the width of the second gate lines 420 is 100 um, the thickness of the second gate lines 420 is 1000 nm, and the second gate lines 420 are not in contact with the first gate lines 410 .
[0106] Comparative Example 1: Compared with the preparation process of Example 1, the difference is that a metal grid line with a thickness of 1000 nm is directly deposited on the top surface of the transparent conductive oxide layer 30 obtained in step 3; the top surface of the transparent conductive oxide layer 30 is not grooved or roughened.
[0107] Test results:
[0108] The efficiency of the cells prepared in Examples 1 to 5 and Comparative Example 1 was tested using a digital source meter under AM1.5G simulated sunlight at 25 degrees Celsius. The test results are shown in Table 1.
[0109] Table 1
[0110]
[0111] It can be seen from Table 1 that in Examples 1-5, by increasing the contact area between the metal grid line 40 and the transparent conductive oxide layer 30 , the contact resistance is reduced, the conductivity is increased, the cell fill factor is significantly improved, and the cell efficiency of the solar cell is better.
[0112] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0113] The above embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.
Claims
1. A perovskite stacked cell, comprising, from bottom to top, a crystalline silicon cell body and a perovskite cell body, wherein a transparent conductive oxide layer is provided on the top of the perovskite cell body, characterized in that: A metal grid line is disposed on the top surface of the transparent conductive oxide layer, and the bottom of the metal grid line is embedded in the transparent conductive oxide layer, and / or the bonding surface between the bottom of the metal grid line and the top surface of the transparent conductive oxide layer is a concave-convex structure.
2. The perovskite tandem cell according to claim 1, characterized in that: A groove is formed on the top surface of the transparent conductive oxide layer, and the bottom of the metal grid line is embedded in the groove.
3. The perovskite tandem battery according to claim 2, characterized in that: The groove passes through the transparent conductive oxide layer, and the metal grid line passes through the transparent conductive oxide layer.
4. The perovskite tandem cell according to claim 2, characterized in that: The bottom surface of the groove is a concave-convex structure, and the bottom of the metal grid line is attached to the bottom surface of the groove.
5. The perovskite tandem cell according to claim 1, characterized in that: Part of the metal grid line is buried in the transparent conductive oxide layer.
6. The perovskite tandem cell according to claim 1, characterized in that: The material of the transparent conductive oxide layer is one or more combinations of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, antimony-doped tin oxide, aluminum-doped zinc oxide or zinc oxide, and the material of the metal grid electrode is one or more combinations of silver paste, copper paste or silver-coated copper paste.
7. A method for manufacturing a perovskite tandem battery, wherein the perovskite tandem battery comprises, from bottom to top, a crystalline silicon battery cell body and a perovskite battery body, characterized in that: The method comprises: A transparent conductive oxide layer and a metal grid line are formed on the top of the perovskite cell body, and the bottom of the metal grid line is embedded in the transparent conductive oxide layer; and / or the bonding surface between the bottom of the metal grid line and the top surface of the transparent conductive oxide layer is a concave-convex structure.
8. The method according to claim 7, characterized in that Forming a transparent conductive oxide layer and a metal grid line on the top of the perovskite cell body, and the bottom of the metal grid line is embedded in the transparent conductive oxide layer; And / or, the bonding surface between the bottom of the metal grid line and the top surface of the transparent conductive oxide layer is a concave-convex structure, including: Preparing a transparent conductive oxide layer on top of the perovskite cell body; A groove is formed on the top surface of the transparent conductive oxide layer, or a laser process is used to roughen the top surface of the transparent conductive oxide layer to form a concave-convex area; A metal material is deposited in the groove or on the concave-convex area to form the metal gate line.
9. The method according to claim 7, characterized in that: Forming a transparent conductive oxide layer and a metal grid line on the top of the perovskite cell body, and the bottom of the metal grid line is embedded in the transparent conductive oxide layer; And / or, the bonding surface between the bottom of the metal grid line and the top surface of the transparent conductive oxide layer is a concave-convex structure, including: Depositing a metal material on the top of the perovskite cell body and forming a first gate line; forming a transparent conductive oxide layer on the first gate line; A metal material is deposited on the transparent conductive oxide layer to form a second gate line.
10. The method according to claim 9, characterized in that Depositing a metal material on the transparent conductive oxide layer and forming a second gate line, comprising: A groove is formed on the top surface of the transparent conductive oxide layer, or a laser process is used to roughen the top surface of the transparent conductive oxide layer to form a concave-convex area; A metal material is deposited in the groove or on the concave-convex area to form the second gate line.