Current-regulated parallel gate light-emitting device structure and display panel

Abstract

The invention discloses a current-regulated parallel gate light-emitting device structure, and relates to the field of photoelectric display. Comprising a light-emitting functional layer arranged on a substrate, a first electron transport layer and a first hole transport layer which are arranged on two sides of the light-emitting functional layer, a first cathode arranged on the first electron transport layer, a second anode arranged on the first hole transport layer and a current regulation and control gate structure, the current regulation and control gate comprises a carrier transport layer and a gate electrode, and the current regulation and control gate structure is arranged on the first cathode or the second anode. According to the invention, the bias signal is applied between the gate electrode and the first cathode or the second anode, so that the migration amount of electronic carriers or hole carriers participating in composite light emitting can be controlled, and the light emitting brightness and / or light emitting efficiency of the light emitting functional layer can be improved.

Description

Technical Field

[0001] The present invention relates to the field of optoelectronic display, and in particular to a current-regulated parallel-gate light-emitting device structure and a display panel. Background Art

[0002] Quantum dots, as cutting-edge luminescent materials, have shown great application prospects and leading roles in the emerging display technology field, especially in the development of quantum dot light-emitting diode (QLED) technology, with their excellent characteristics such as extremely narrow half-width, high color purity, high quantum efficiency and wide adjustable spectral range. QLED technology is regarded as a pioneer in the field of future display devices and is expected to lead a revolution in visual technology.

[0003] However, despite the promising prospects of QLED technology, in actual application, the recombination process of charge carriers has become a key bottleneck restricting its luminous efficiency or brightness. In order to achieve the best device efficiency, researchers must carefully design and optimize each functional layer and select high-performance quantum dot materials. This process is not only technically difficult, but also time-consuming and labor-intensive, requiring a large amount of resource investment, thereby increasing the cost and time of research and development.

[0004] In addition, due to the inherent difference in mobility between electrons and holes, charge carrier imbalance often occurs in the light-emitting layer of QLED devices. This imbalance leads to inefficient recombination of charge carriers in the free state, which in turn affects the overall luminescence performance of the device. This problem not only hinders the development of QLED technology, but is also a common challenge faced by organic light-emitting diode (OLED) devices, becoming a key factor restricting the further improvement of the performance of these two display technologies.

[0005] Therefore, how to effectively improve the recombination process of charge carriers and balance the mobility of electrons and holes without significantly increasing costs, thereby improving the luminous efficiency of QLED and OLED devices, is an important issue that needs to be urgently addressed in the current display technology field. Summary of the invention

[0006] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a current-regulated parallel-gate light-emitting device structure, aiming to improve the luminous efficiency or the luminous brightness through gate regulation.

[0007] To achieve the above-mentioned purpose, the present invention provides a current-regulated parallel-gate light-emitting device structure, the device structure comprising: a substrate, a light-emitting functional layer arranged on the substrate, a first electron transport layer and a first hole transport layer arranged on both sides of the light-emitting functional layer, a first cathode arranged on the first electron transport layer, a second anode arranged on the first hole transport layer, and a current-regulating gate structure; the current-regulating gate comprises a carrier transport layer and a gate electrode; the current-regulating gate structure is arranged on the first cathode or the second anode, wherein when the gate electrode of the current-regulating gate structure is arranged on the first cathode side as a first gate, the carrier transport layer is a second electron transport layer, and when the gate electrode of the current-regulating gate structure is arranged on the second anode side as a second gate, the carrier transport layer is a second hole transport layer;

[0008] A driving signal is applied between the first cathode and the second anode to make electrons and holes recombine and emit light in the light-emitting functional layer; a bias signal is applied between the gate electrode and the first cathode or the second anode to control the migration amount of electron carriers or hole carriers participating in the recombination luminescence, and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer.

[0009] The technical solution is based on a parallel gate structure light-emitting device, and a current control gate structure is set at the anode end or the cathode end of the device. The injection of electrons or holes is realized by current injection, and the mobility of electrons and holes is regulated under the original device driving conditions. The brightness or luminous efficiency of the light-emitting device is regulated, especially the luminous efficiency of the light-emitting device is regulated, and the problem of the luminous efficiency of the light-emitting device being affected by the mismatch of single-sided carrier injection caused by the unbalanced electron-hole recombination mobility in the light-emitting functional layer is solved. Based on the light-emitting device structure of the present invention, the luminous efficiency can be effectively improved and energy can be saved.

[0010] In a specific embodiment, a current limiting resistor is also connected in series in the circuit loop formed by the current regulating gate structure, the first cathode or the second anode, and the bias signal; the current limiting resistor is deposited in the current regulating gate structure or is independent of the current regulating gate structure.

[0011] In this technical solution, the current limiting resistor is used to control the transmission layer current of the current regulating grid to prevent the inter-electrode current from being too large and burning out the device.

[0012] In a specific embodiment, if the current control gate structure is arranged on the first cathode, a first bias signal is applied between the gate and the first cathode; the first bias signal is configured as follows: when the first gate applies a negative phase potential relative to the first cathode to increase the amount of electrons injected by the first cathode into the light-emitting functional layer, and when the first gate applies a positive phase potential relative to the first cathode to reduce the amount of electrons injected by the first cathode into the light-emitting functional layer, the luminous brightness or luminous efficiency of the electron-hole recombination of the light-emitting function is controlled.

[0013] In a specific embodiment, if the current regulating gate structure is arranged on the second anode, a second bias signal is applied between the gate and the second anode; when the second bias signal is configured as follows: when the second gate applies a positive phase potential relative to the second anode to increase the amount of holes injected by the second anode into the light-emitting functional layer, when the second gate applies a negative phase potential relative to the second anode to reduce the amount of holes injected by the second anode into the light-emitting functional layer, the luminous brightness or luminous efficiency of the electron-hole recombination of the light-emitting function is controlled.

[0014] In a specific embodiment, when the intrinsic carrier concentration of the first carrier corresponding to the current control gate structure in the light-emitting functional layer is less than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminous brightness and luminous efficiency of the electron-hole recombination of the light-emitting function; in a specific embodiment, when the intrinsic carrier concentration of the first carrier corresponding to the current control gate structure in the light-emitting functional layer is greater than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminous brightness of the electron-hole recombination of the light-emitting function;

[0015] Wherein, the first carrier is the electron carrier or the hole carrier, and the relative carrier is the relative hole carrier or the electron carrier.

[0016] In a specific embodiment, the current regulating gate structure includes a first regulating gate structure disposed on the first cathode and a second regulating gate structure disposed on the second anode, wherein the first regulating gate structure includes a second electron transport layer and the first gate stacked and arranged on the first cathode, and the second regulating gate structure includes a second hole transport layer and the second gate stacked and arranged on the second anode.

[0017] A first bias signal is applied between the first gate and the first cathode, and a second bias signal is applied between the second gate and the second anode to control the migration amount of electron carriers and hole carriers participating in composite luminescence and control the luminescence efficiency of the luminescent functional layer.

[0018] In a specific embodiment, the device structure is configured as follows:

[0019] The intrinsic mobility of the electron carriers of the light-emitting functional layer is less than the intrinsic mobility of the hole carriers of the light-emitting functional layer, the first gate applies a negative phase potential relative to the first cathode to increase the amount of electrons injected from the first cathode to the light-emitting functional layer, and the second gate applies a negative phase potential relative to the second anode to reduce the amount of holes injected from the second anode to the light-emitting functional layer;

[0020] The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer when the first bias signal and the second bias signal are not applied.

[0021] In a specific embodiment, the device structure is configured as follows:

[0022] The intrinsic mobility of the hole-type carriers of the light-emitting functional layer is less than the intrinsic mobility of the electron-type carriers of the light-emitting functional layer, the first gate applies a positive potential relative to the first cathode to reduce the amount of electrons injected from the first cathode to the light-emitting functional layer, and the second gate applies a positive potential relative to the second anode to increase the amount of holes injected from the second anode to the light-emitting functional layer;

[0023] The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer when the first bias signal and the second bias signal are not applied.

[0024] In a specific embodiment, the light-emitting functional structure is LED, OLED or QLED; wherein, when the light-emitting functional structure is the OLED, a first electron injection layer is further included on the first electron transport layer and between the first cathodes, and a first hole injection layer is further included on the first hole transport layer and between the second anodes.

[0025] In a second aspect of the present invention, a display panel based on current gate light emission regulation is provided, the panel comprising:

[0026] A panel array composed of a current-regulated parallel-gate light-emitting device structure as a unit provided by any embodiment of the first aspect of the present invention.

[0027] Beneficial effects of the present invention: 1) The present invention is based on a parallel gate structure light-emitting device, and a current control gate structure is set at the anode end or the cathode end of the device, and the injection of electrons or holes is realized by current injection, so as to realize the regulation of the mobility of electrons and holes under the original device driving conditions, and realize the regulation of the luminous brightness or luminous efficiency of the light-emitting device, especially the regulation of the luminous efficiency of the light-emitting device, so as to solve the problem that the luminous efficiency of the light-emitting device is affected by the mismatch of single-sided carrier injection caused by the unbalanced electron-hole recombination mobility in the light-emitting functional layer. Based on the light-emitting device structure of the present invention, the luminous efficiency can be effectively improved and energy can be saved. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the structure of a light-emitting device in which a current regulating gate is arranged on the electron injection side of a parallel-gate light-emitting device in a specific embodiment of the present invention;

[0029] Figure 2 It is a schematic diagram of the structure of a light-emitting device in which a current regulating gate is arranged on the hole injection side of a parallel-gate light-emitting device in a specific embodiment of the present invention;

[0030] Figure 3 It is a schematic structural diagram of a light-emitting device with a current-regulated double-gate structure in a specific embodiment of the present invention;

[0031] Figure 4 It is a driving schematic diagram of a light-emitting device structure with a current-regulated double-gate structure for improving light-emitting efficiency in a specific embodiment of the present invention. DETAILED DESCRIPTION

[0032] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0033] In the description of this patent, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing this patent and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this patent.

[0034] In the description of this patent, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "set" should be understood in a broad sense, for example, it can be fixedly connected or set, or it can be detachably connected or set, or connected or set in one piece. For ordinary technicians in this field, the specific meanings of the above terms in this patent can be understood according to specific circumstances.

[0035] The embodiment of the present invention provides a current-controlled parallel-gate light-emitting device structure, such as Figure 1-Figure 3 In the present invention, based on a parallel gate structure light emitting device, a current regulating gate structure 107 is set at the anode end or cathode end of the device, and the injection of electrons or holes is realized by current injection, so as to realize the regulation of the mobility of electrons and holes under the original device driving conditions, realize the regulation of the luminous brightness or luminous efficiency of the light emitting device, especially the regulation of the luminous efficiency of the light emitting device, solve the problem that the luminous efficiency of the light emitting device is affected by the mismatch of single-side carrier injection caused by the unbalanced electron-hole recombination mobility in the light emitting functional layer 102, and based on the light emitting device structure of the present invention, the luminous efficiency can be effectively improved and energy can be saved.

[0036] In a first embodiment of the present invention, a current-regulated parallel-gate light-emitting device structure is provided, the device structure comprising: a substrate 101, a light-emitting functional layer 102 arranged on the substrate 101, a first electron transport layer 103 and a first hole transport layer 104 arranged on both sides of the light-emitting functional layer 102, a first cathode 105 arranged on the first electron transport layer 103, a second anode 106 arranged on the first hole transport layer 104, and a current-regulating gate structure 107; the current-regulating gate comprises a carrier transport layer and a gate electrode; the current-regulating gate structure 107 is arranged on the first cathode 105 or the second anode 106, wherein when the gate electrode of the current-regulating gate structure 107 is arranged on the first cathode 105 side as a first gate electrode 109, the carrier transport layer is a second electron transport layer 108, and when the gate electrode of the current-regulating gate structure 107 is arranged on the second anode 106 side as a second gate electrode 111, the carrier transport layer is a second hole transport layer 110;

[0037] A driving signal is applied between the first cathode 105 and the second anode 106 to enable electrons and holes to recombine and emit light in the light-emitting functional layer 102; a bias signal is applied between the gate electrode and the first cathode 105 or the second anode 106 to control the migration amount of electron carriers or hole carriers participating in the recombination luminescence, and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer 102.

[0038] In fact, in this embodiment, the current control gate can be set on the electron injection side or the hole injection side. The luminous efficiency can be improved by only leveling the hole-electron injection amount. For example, if one side has less carrier injection, the current control gate can be set this time to increase the carrier injection amount to improve the luminous efficiency. Of course, the current control gate can also be set on the side with more carrier injection to reduce the carrier injection amount and improve the luminous efficiency. In addition, it is worth mentioning that in order to improve the brightness without considering the luminous efficiency, a current gate structure can be set on the side with more carriers to increase the carrier injection amount and further improve the luminous efficiency.

[0039] Preferably, in this embodiment, a current limiting resistor is also connected in series in the circuit loop formed by the current regulating gate structure 107, the first cathode 105 or the second anode 106, and the bias signal; the current limiting resistor is deposited in the current regulating gate structure 107 or is independent of the current regulating gate structure 107.

[0040] The current limiting resistor is used to control the transmission layer current of the current regulating grid to avoid excessive inter-electrode current and burn out the device, and can adapt to a relatively high driving voltage.

[0041] like Figure 2 As shown, in a typical scheme of this embodiment, the current regulating gate structure 107 is arranged on the first cathode 105, and a first bias signal is applied between the gate and the first cathode 105; the first bias signal is configured as: when the first gate 109 applies a negative phase potential relative to the first cathode 105 to increase the amount of electrons injected by the first cathode 105 to the light-emitting functional layer 102, when the first gate 109 applies a positive phase potential relative to the first cathode 105 to reduce the amount of electrons injected by the first cathode 105 to the light-emitting functional layer 102, so as to control the luminous brightness or luminous efficiency of the electron-hole recombination of the light-emitting function.

[0042] like Figure 3 As shown, in another typical scheme of the present embodiment, the current regulating gate structure 107 is arranged on the second anode 106, and a second bias signal is applied between the gate and the second anode 106; when the second bias signal is configured as: when the second gate 111 applies a positive phase potential relative to the second anode 106 to increase the amount of holes injected by the second anode 106 to the light-emitting functional layer 102, when the second gate 111 applies a negative phase potential relative to the second anode 106 to reduce the amount of holes injected by the second anode 106 to the light-emitting functional layer 102, so as to control the luminous brightness or luminous efficiency of the electron-hole recombination of the light-emitting function.

[0043] The above two typical schemes are considered from the perspective of setting the current control gate on the electron injection side and the hole injection control respectively.

[0044] In fact, in this embodiment, when the current control gate structure 107 is arranged on the side of low mobility (inside the light-emitting functional layer 102), the injection amount of the corresponding carriers is increased, and the luminous brightness and the luminous efficiency are improved simultaneously; and when the current control gate structure 107 is arranged on the side of high mobility (inside the light-emitting functional layer 102), the injection amount of the corresponding carriers is increased, the luminous brightness is improved, and the luminous efficiency is reduced, and the injection amount of the corresponding carriers is reduced, the luminous brightness is reduced, and the luminous efficiency is improved;

[0045] That is, when the intrinsic carrier concentration of the first carrier corresponding to the current regulating gate structure 107 in the light-emitting functional layer 102 is less than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminous brightness and luminous efficiency of the electron-hole recombination of the light-emitting function;

[0046] That is, when the intrinsic carrier concentration of the first carrier corresponding to the current regulating gate structure 107 in the light-emitting functional layer 102 is greater than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminous brightness of the electron-hole recombination of the light-emitting function;

[0047] Wherein, the first carrier is the electron carrier or the hole carrier, and the relative carrier is the relative hole carrier or the electron carrier.

[0048] Furthermore, in fact, in this embodiment, current control gates can be provided on both the electron injection side and the hole injection side to control the luminous brightness and luminous efficiency of the light-emitting device.

[0049] Typically, in a typical case of this embodiment, the current regulating gate structure 107 includes a first regulating gate structure disposed on the first cathode 105 and a second regulating gate structure disposed on the second anode 106, the first regulating gate structure includes a second electron transport layer 108 and the first gate 109 stacked and arranged on the first cathode 105, the second regulating gate structure includes a second hole transport layer 110 and the second gate 111 stacked and arranged on the second anode 106,

[0050] A first bias signal is applied between the first gate 109 and the first cathode 105 , and a second bias signal is applied between the second gate 111 and the second anode 106 to control the migration amount of electron carriers and hole carriers participating in the composite luminescence and control the luminescence efficiency of the luminescent functional layer 102 .

[0051] Furthermore, according to the mobility of electrons and holes in the specific light-emitting functional layer 102, the driving mode of the light-emitting device can be configured as follows:

[0052] 1) The device structure is configured as follows:

[0053] like Figure 4 As shown, the intrinsic mobility of the electron-type carriers of the light-emitting functional layer 102 is less than the intrinsic mobility of the hole-type carriers of the optical functional layer, the first gate 109 applies a negative phase potential relative to the first cathode 105 to increase the amount of electrons injected by the first cathode 105 into the light-emitting functional layer 102, and the second gate 111 applies a negative phase potential relative to the second anode 106 to reduce the amount of holes injected by the second anode 106 into the light-emitting functional layer 102; wherein the intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer 102 when the first bias signal and the second bias signal are not applied.

[0054] 2) The device structure is configured as follows:

[0055] The intrinsic mobility of the hole-type carriers of the light-emitting functional layer 102 is smaller than the intrinsic mobility of the electron-type carriers of the light-emitting functional layer, the first gate 109 applies a positive potential relative to the first cathode 105 to reduce the amount of electrons injected by the first cathode 105 into the light-emitting functional layer 102, and the second gate 111 applies a positive potential relative to the second anode 106 to increase the amount of holes injected by the second anode 106 into the light-emitting functional layer 102; wherein the intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer 102 when the first bias signal and the second bias signal are not applied.

[0056] The above two driving modes are adaptive driving in consideration of the intrinsic mobility of electrons and the intrinsic mobility of holes.

[0057] In addition, it is worth mentioning that in this embodiment, the light-emitting functional structure can be LED, OLED or QLED; wherein, when the light-emitting functional structure is the OLED, a first electron injection layer is also included on the first electron transport layer 103 and between the first cathode 105, and a first hole injection layer is also included on the first hole transport layer 104 and between the second anode 106.

[0058] In a second embodiment of the present invention, a display panel based on current gate light emission regulation is provided, the panel comprising:

[0059] A panel array is formed by using a current-regulated parallel-gate light-emitting device structure provided by the first embodiment of the present invention as a unit.

[0060] The preferred specific embodiments of the present invention are described in detail above. It should be understood that a person skilled in the art can make many modifications and changes based on the concept of the present invention without creative work. Therefore, any technical solution that can be obtained by a person skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention on the basis of the prior art should be within the scope of protection determined by the claims.

Claims

1. A current-regulated parallel-gate light-emitting device structure, characterized in that: The device structure includes: a substrate, a light-emitting functional layer arranged on the substrate, a first electron transport layer and a first hole transport layer arranged on both sides of the light-emitting functional layer, a first cathode arranged on the first electron transport layer, a second anode arranged on the first hole transport layer, and a current regulating gate structure; the current regulating gate includes a carrier transport layer and a gate electrode; the current regulating gate structure is arranged on the first cathode or the second anode, wherein when the gate electrode of the current regulating gate structure is arranged on the first cathode side as a first gate, the carrier transport layer is a second electron transport layer, and when the gate electrode of the current regulating gate structure is arranged on the second anode side as a second gate, the carrier transport layer is a second hole transport layer; A driving signal is applied between the first cathode and the second anode to make electrons and holes recombine and emit light in the light-emitting functional layer; a bias signal is applied between the gate electrode and the first cathode or the second anode to control the migration amount of electron carriers or hole carriers participating in the recombination luminescence, and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer.

2. A current-regulated parallel-gate light-emitting device structure as claimed in claim 1, characterized in that: A current limiting resistor is also connected in series in the circuit loop formed by the current regulating gate structure, the first cathode or the second anode, and the bias signal; the current limiting resistor is deposited in the current regulating gate structure or is independent of the current regulating gate structure.

3. A current-regulated parallel-gate light-emitting device structure as claimed in claim 1, characterized in that: If the current regulating gate structure is arranged on the first cathode, a first bias signal is applied between the gate and the first cathode; the first bias signal is configured as follows: when the first gate applies a negative phase potential relative to the first cathode to increase the amount of electrons injected by the first cathode into the light-emitting functional layer, and when the first gate applies a positive phase potential relative to the first cathode to reduce the amount of electrons injected by the first cathode into the light-emitting functional layer, the luminous brightness or luminous efficiency of the electron-hole recombination of the light-emitting function is controlled.

4. A current-regulated parallel-gate light-emitting device structure as claimed in claim 1, characterized in that: If the current regulating gate structure is arranged on the second anode, a second bias signal is applied between the gate and the second anode; when the second bias signal is configured as follows: when the second gate applies a positive phase potential relative to the second anode to increase the amount of holes injected by the second anode into the light-emitting functional layer, and when the second gate applies a negative phase potential relative to the second anode to reduce the amount of holes injected by the second anode into the light-emitting functional layer, the luminous brightness or luminous efficiency of the electron-hole recombination of the light-emitting function is controlled.

5. A current-regulated parallel-gate light-emitting device structure as claimed in claim 3 or 4, characterized in that: When the intrinsic carrier concentration of the first carrier corresponding to the current regulating gate structure in the light-emitting functional layer is less than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminous brightness and luminous efficiency of the electron-hole recombination of the light-emitting function; When the intrinsic carrier concentration of the first carrier corresponding to the current regulating gate structure in the light-emitting functional layer is greater than the intrinsic carrier concentration of the relative carrier, the carrier injection amount of the first carrier is increased to improve the luminous brightness of the electron-hole recombination of the light-emitting function; Wherein, the first carrier is the electron carrier or the hole carrier, and the relative carrier is the relative hole carrier or the electron carrier.

6. A current-regulated parallel-gate light-emitting device structure as claimed in claim 1, characterized in that: The current regulating gate structure includes a first regulating gate structure disposed on the first cathode and a second regulating gate structure disposed on the second anode, wherein the first regulating gate structure includes a second electron transport layer and the first gate stacked and arranged on the first cathode, and the second regulating gate structure includes a second hole transport layer and the second gate stacked and arranged on the second anode, A first bias signal is applied between the first gate and the first cathode, and a second bias signal is applied between the second gate and the second anode to control the migration amount of electron carriers and hole carriers participating in composite luminescence and control the luminescence efficiency of the luminescent functional layer.

7. A current-regulated parallel-gate light-emitting device structure as claimed in claim 6, characterized in that: The device structure is configured as follows: The intrinsic mobility of the electron carriers of the light-emitting functional layer is less than the intrinsic mobility of the hole carriers of the light-emitting functional layer, the first gate applies a negative phase potential relative to the first cathode to increase the amount of electrons injected from the first cathode to the light-emitting functional layer, and the second gate applies a negative phase potential relative to the second anode to reduce the amount of holes injected from the second anode to the light-emitting functional layer; The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer when the first bias signal and the second bias signal are not applied.

8. A current-regulated parallel-gate light-emitting device structure as claimed in claim 6, characterized in that: The device structure is configured as follows: The intrinsic mobility of the hole-type carriers of the light-emitting functional layer is less than the intrinsic mobility of the electron-type carriers of the light-emitting functional layer, the first gate applies a positive potential relative to the first cathode to reduce the amount of electrons injected from the first cathode to the light-emitting functional layer, and the second gate applies a positive potential relative to the second anode to increase the amount of holes injected from the second anode to the light-emitting functional layer; The intrinsic mobility refers to the electron mobility or hole mobility in the light-emitting functional layer when the first bias signal and the second bias signal are not applied.

9. A current-regulated parallel-gate light-emitting device structure as claimed in claim 1, characterized in that: The light-emitting functional structure is LED, OLED or QLED; wherein, when the light-emitting functional structure is the OLED, a first electron injection layer is further included on the first electron transport layer and between the first cathodes, and a first hole injection layer is further included on the first hole transport layer and between the second anodes.

10. A display panel based on current gate light emission regulation, characterized in that: The panel comprises: A panel array composed of a current-regulated parallel-gate light-emitting device structure provided as claimed in any one of claims 1 to 9 as a unit.

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