Electronic device

Abstract

The invention provides an electronic device. The electronic device comprises a substrate, a signal line, a first electronic unit, a conductive structure and a light blocking layer, the signal line is arranged on the substrate. The first electronic unit is disposed on the substrate and includes a first electrode. The conductive structure is disposed on the substrate and includes a first conductive pattern, an insulating layer disposed on the first conductive pattern, and a second conductive pattern disposed on the insulating layer. The second conductive pattern is electrically connected with the first conductive pattern through the first opening of the insulating layer, and the first electrode is electrically connected with the signal line through the conductive structure. The light blocking layer overlaps the conductive structure.

Description

Technical Field

[0001] The present disclosure relates to an electronic device, and more particularly to an electronic device capable of improving the visibility of an electrical connection structure. Background Art

[0002] Electronic devices such as tablets, laptops, smartphones, monitors and TVs have become an indispensable necessity in modern society. With the booming development of such portable electronic products, consumers have high expectations for the quality, functionality or price of these products.

[0003] As electronic devices grow in size, some electronic components need to be electrically connected via additional auxiliary structures to improve problems such as excessively high impedance. However, these electrical connection structures may lead to other problems that affect the performance of the electronic devices. For example, the obvious visibility of the electrical connection structures may affect the display quality of the electronic devices or cause signal interference.

[0004] As mentioned above, existing electronic devices still fail to meet the requirements in all aspects, and further improving the performance of the electrical connection structure of electronic devices is still one of the research topics that the industry is currently committed to. Summary of the invention

[0005] According to some embodiments of the present disclosure, an electronic device is provided, comprising a substrate, a signal line, a first electronic unit, a conductive structure, and a light blocking layer. The signal line is disposed on the substrate. The first electronic unit is disposed on the substrate and comprises a first electrode. The conductive structure is disposed on the substrate and comprises a first conductive pattern, an insulating layer disposed on the first conductive pattern, and a second conductive pattern disposed on the insulating layer. The second conductive pattern is electrically connected to the first conductive pattern via a first opening of the insulating layer, and the first electrode is electrically connected to the signal line via the conductive structure. The light blocking layer overlaps with the conductive structure.

[0006] In order to make the features and advantages of the present disclosure more obvious and understandable, some embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 A schematic diagram showing a cross-sectional structure of an electronic device according to some embodiments of the present disclosure;

[0008] Figure 2 Showing a schematic diagram of a top view structure of an electronic device according to some embodiments of the present disclosure;

[0009] Figure 3 According to some embodiments of the present disclosure, along Figure 2 A schematic cross-sectional view of the electronic device taken along the section line AA';

[0010] Figure 4Showing an equivalent circuit diagram of an electronic device according to some embodiments of the present disclosure;

[0011] Figure 5 A schematic diagram showing a cross-sectional structure of an electronic device according to some embodiments of the present disclosure;

[0012] Figure 6 A schematic diagram showing a top view of some components of an electronic device according to some embodiments of the present disclosure;

[0013] Figure 7 According to some embodiments of the present disclosure, along Figure 6 A schematic cross-sectional view of the electronic device taken along the section line BB';

[0014] FIG. 8A to FIG. 8G A schematic diagram showing a top view of some components of an electronic device according to some embodiments of the present disclosure;

[0015] Fig. 9 A schematic diagram of the top structure of an electronic device according to some embodiments of the present disclosure is shown.

[0016]

Explanation of symbols

[0017] 10: Electronic devices

[0018] 20: Electronic devices

[0019] 100: Electronic unit layer

[0020] 100a: Electronic unit

[0021] 100a-1: Electronic unit

[0022] 100a-2: Electronic unit

[0023] 100b: Electronic unit

[0024] 100c: Electronic unit

[0025] 102:Substrate

[0026] 110: first electrode

[0027] 112: Second electrode

[0028] 114: Active layer

[0029] 114V: Open

[0030] 200: Conductive structure

[0031] 200a: first conductive pattern

[0032] 200b: second conductive pattern

[0033] 201: Dielectric layer

[0034] 203: Gate dielectric layer

[0035] 204: Insulation layer

[0036] 205: Insulation layer

[0037] 205V-1: First opening

[0038] 205V-2: Second opening

[0039] 207: Insulation layer

[0040] 209: Encapsulation layer

[0041] 301: Insulation layer

[0042] 302:Substrate

[0043] 303: Low refractive index layer

[0044] 304: opaque layer

[0045] 304w: Empty area

[0046] 305: Light scattering layer

[0047] 3051: Light scattering particles

[0048] 306: light conversion layer

[0049] 3061:Light conversion particles

[0050] 3062:Light conversion particles

[0051] 307: Insulation layer

[0052] 308: Adhesive layer

[0053] 309: Covering layer

[0054] 311: Optical film

[0055] 400: Light blocking layer

[0056] 400a: first color filter layer

[0057] 400b: second color filter layer

[0058] 400c: third color filter layer

[0059] A-A': Intersection

[0060] B-B': Intersection

[0061] C0: Center

[0062] C1: Center

[0063] C2: Unit Center

[0064] Ca: Geometric Center

[0065] Cb: Geometric Center

[0066] Cc: Geometric center

[0067] CL:Signal line

[0068] Cst: Storage Capacitor

[0069] D: Distance

[0070] e1: outer edge

[0071] e2: outer edge

[0072] E1: Distance

[0073] E2: Distance

[0074] H: Distance

[0075] J1, J2: Spacing

[0076] P1: Part 1

[0077] P2: Part 2

[0078] PN: connection part

[0079] SN: Scan line voltage

[0080] T1: Thin Film Transistor

[0081] T2: Thin Film Transistor

[0082] TFT: Thin Film Transistor

[0083] Vdd: operating voltage

[0084] Vdata: data line voltage

[0085] Vss: shared voltage

[0086] W0: Width

[0087] W0': Width DETAILED DESCRIPTION

[0088] The following is a detailed description of the electronic device of the embodiment of the present disclosure. It should be understood that the following description provides many different embodiments for implementing different aspects of some embodiments of the present disclosure. The specific components and arrangements described below are only for simple and clear description of some embodiments of the present disclosure. Of course, these are only used as examples and are not limitations of the present disclosure. In addition, similar and / or corresponding numbers may be used in different embodiments to indicate similar and / or corresponding components to clearly describe the present disclosure. However, the use of these similar and / or corresponding numbers is only for the purpose of simply and clearly describing some embodiments of the present disclosure, and does not represent any correlation between the different embodiments and / or structures discussed.

[0089] It should be understood that relative terms, such as "lower" or "bottom" or "upper" or "top", may be used in the embodiments to describe the relative relationship of one component to another component in the drawings. It is understood that if the device in the drawings is turned upside down, the component described on the "lower" side will become the component on the "upper" side. The embodiments of the present disclosure may be used in conjunction with the attached drawings. Figure 1 It is also understood that the drawings of the present disclosure are also considered as part of the disclosure. It should be understood that the drawings of the present disclosure are not drawn to scale, and in fact, the size of the components may be arbitrarily enlarged or reduced to clearly show the features of the present disclosure.

[0090] Furthermore, when a first material layer is mentioned as being located on or above a second material layer, it may include a situation where the first material layer is in direct contact with the second material layer or the first material layer and the second material layer may not be in direct contact, that is, there may be one or more other material layers between the first material layer and the second material layer. However, if the first material layer is directly located on the second material layer, it means that the first material layer and the second material layer are in direct contact.

[0091] In addition, it should be understood that the ordinal numbers used in the specification and claims, such as "first", "second", etc., to modify components, do not imply or represent any previous ordinal numbers of the component (or components), nor do they represent the order of one component and another component, or the order of the manufacturing method. The use of these ordinal numbers is only used to make a component with a certain name clearly distinguishable from another component with the same name. The same words may not be used in the claims and the specification. For example, the first component in the specification may be the second component in the claims.

[0092] In some embodiments of the present disclosure, terms such as "connection", "interconnection", etc., related to bonding and connection, unless otherwise defined, may refer to two structures being in direct contact, or may also refer to two structures not being in direct contact, wherein another structure is disposed between the two structures. Such terms related to bonding and connection may also include situations where both structures are movable, or both structures are fixed. In addition, the terms "electrically connected" or "coupled" include any direct and indirect electrical connection means.

[0093] In the text, the terms "about", "substantially", and "approximately" usually mean within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The term "range between a first value and a second value" means that the range includes the first value, the second value, and other values ​​therebetween. Furthermore, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0094] It should be understood that the following embodiments may replace, reorganize, or combine features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. The features of each embodiment may be used in any combination as long as they do not violate the spirit of the invention or conflict with each other.

[0095] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as commonly understood by those skilled in the art to which the present disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.

[0096] As electronic devices become larger in size, some electronic components need to be electrically connected by additional auxiliary structures to improve problems such as high impedance. However, these electrical connection structures may lead to other problems that affect the performance of electronic devices.

[0097] According to an embodiment of the present disclosure, an electronic device is provided, comprising a conductive structure that electrically connects an electrode of an electronic unit to a signal line. The conductive structure can reduce the voltage decay (IR drop) problem caused by the high impedance of the electrode, and the conductive structure overlaps with a light blocking layer, thereby improving the obvious visibility of the conductive structure, thereby improving the display quality degradation or signal interference of the electronic device, and improving the overall performance of the electronic device.

[0098] According to an embodiment of the present disclosure, the electronic device may include a display device, a splicing device, a touch electronic device, a sensing device, a curved electronic device or a non-rectangular electronic device, but is not limited thereto. The electronic device may, for example, include a liquid crystal, a light emitting diode, fluorescence, phosphorescence, other suitable display media, or a combination of the foregoing, but is not limited thereto. The display device may be a non-self-luminous display device or a self-luminous display device. The electronic device may include an electronic unit, which may be a passive component or an active component, such as a capacitor, a resistor, an inductor, a diode, a transistor, etc. The diode may include a light-emitting diode (LED) or a photodiode. The light-emitting diode may, for example, include an organic light-emitting diode (OLED), a sub-millimeter light-emitting diode (mini LED), a micro LED or a quantum dot light-emitting diode (quantum dot LED), but is not limited thereto. The splicing device may, for example, be a display splicing device, but is not limited thereto. It should be noted that the electronic device can be any combination of the above arrangements, but is not limited thereto. In addition, the electronic device can be a bendable or flexible electronic device. In addition, the appearance of the electronic device can be rectangular, circular, polygonal, a shape with curved edges or other suitable shapes. The electronic device can have peripheral systems such as a drive system, a control system, a light source system, a shelf system, etc. to support a display device or a splicing device. For ease of description, the following description will be based on the state of the electronic device as a display device, but the present disclosure is not limited thereto.

[0099] Please refer to Figure 1 , Figure 2 as well as Figure 3 , Figure 1 A schematic cross-sectional structure diagram of an electronic device 10 according to some embodiments of the present disclosure is shown. Figure 2 A schematic diagram showing a top view of the structure of an electronic device 10 according to some embodiments of the present disclosure is shown. Figure 3 According to some embodiments of the present disclosure, along Figure 2Schematic diagram of a cross-section of the electronic device along the section line AA' in FIG. It should be understood that for the sake of clarity, some components of the electronic device 10 may be omitted in the drawings, and only some components are schematically shown. According to some embodiments, additional features may be added to the electronic device 10 described below. Specifically, Figure 2 as well as Figure 3 Only show Figure 1 , to illustrate the connection relationship between the conductive structure 200 and other components (eg, the first electrode 110 and the signal line CL, etc.). In addition, it should be understood that Figure 1 The detailed structure of the conductive structure 200 is not shown. For the detailed structure of the conductive structure 200, please refer to Figure 2 as well as Figure 3 .

[0100] like Figure 1 As shown, the electronic device 10 may include a substrate 102, a signal line CL, an electronic unit 100a, a conductive structure 200, and a light blocking layer 400. The signal line CL, the electronic unit 100a, and the conductive structure 200 may be disposed on the substrate 102, and the light blocking layer 400 overlaps the conductive structure 200. Specifically, the light blocking layer 400 overlaps the conductive structure 200 in the normal direction of the substrate 102 (e.g., the Z direction in the figure).

[0101] According to some embodiments, the active driving circuit and / or the passive driving circuit may be fabricated on the substrate 102. For example, Figure 1As shown, the electronic device 10 may include a thin film transistor TFT (e.g., a switching transistor, a driving transistor, a reset transistor, a transistor amplifier or other suitable thin film transistor) disposed on a substrate 102, a signal line CL, a dielectric layer 201 and a gate dielectric layer 203. The thin film transistor TFT may include at least one semiconductor layer and a gate electrode layer, the semiconductor layer includes a doped region with a suitable dopant and a channel region located between the two doped regions, and the doped region may further have portions with different doping concentrations. Furthermore, the semiconductor layer may include amorphous silicon, low-temp polysilicon (LTPS), metal oxide, other suitable materials or a combination of the foregoing, but is not limited thereto. The metal oxide may include indium gallium zinc oxide (IGZO), indium zinc oxide (IZO), indium gallium oxide (IGO), indium gallium zinc tin oxide (IGZTO), other suitable materials or combinations thereof, but are not limited thereto. In addition, although the thin film transistor TFT shown in the drawings is a bottom gate thin film transistor, the thin film transistor TFT may also be a top gate thin film transistor, a bottom gate thin film transistor, or a dual gate or double gate thin film transistor according to different embodiments.

[0102] According to some embodiments, the signal line CL is used to receive a common voltage, but is not limited thereto. According to some embodiments, the electronic device 10 may further include other signal lines disposed on the substrate 102 such as a data line, a scan line, a touch signal line, etc., but is not limited thereto.

[0103] The substrate 102 may include a rigid substrate or a flexible substrate. According to some embodiments, the material of the substrate 102 may include glass, quartz, sapphire, polyimide (PI), polycarbonate (PC), polyethylene terephthalate (PET), polypropylene (PP), polydimethylsiloxane (PDMS), other suitable materials or a combination thereof, but is not limited thereto.

[0104] According to some embodiments, the electronic unit 100a may include a light-emitting unit or a sensing unit, but is not limited thereto. The light-emitting unit may be specifically a light-emitting diode. Specifically, according to some embodiments, the electronic unit 100a may be a light-emitting unit, and the electronic unit 100a may include a first electrode 110, a second electrode 112, and an active layer 114, wherein the second electrode 112 is disposed under the first electrode 110, and the active layer 114 is disposed between the first electrode 110 and the second electrode 112. In addition, the electronic device 10 may have a plurality of electronic units, such as the electronic unit 100a, the electronic unit 100b, and the electronic unit 100c in the accompanying drawings. According to some embodiments, the electronic unit 100a, the electronic unit 100b, and the electronic unit 100c may be pixel units. It should be understood that, for the sake of simplicity, the description of the electronic unit in the text is mostly described by taking the electronic unit 100a as an example, but the relevant description of the electronic unit 100a can also be applied to the electronic unit 100b and the electronic unit 100c.

[0105] According to some embodiments, the first electrode 110 , the second electrode 112 , and the active layer 114 may serve as a cathode, an anode, and a light-emitting layer of a light-emitting unit, respectively, but the present invention is not limited thereto.

[0106] According to some embodiments, the material of the first electrode 110 may include a transparent conductive material or a metal conductive material, but is not limited thereto. According to some embodiments, the material of the second electrode 112 may include a metal conductive material, a transparent conductive material, other suitable materials, or a combination thereof, but is not limited thereto. The transparent conductive material may include, for example, a transparent conductive oxide (TCO), such as indium tin oxide (ITO), antimony zinc oxide (AZO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimony tin oxide (ATO), other suitable transparent conductive materials, or a combination thereof, but is not limited thereto. The metal conductive material may include, for example, copper (Cu), aluminum (Al), indium (In), ruthenium (Ru), tin (Sn), gold (Au), platinum (Pt), molybdenum (Mo), zinc (Zn), silver (Ag), titanium (Ti), lead (Pb), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), magnesium (Mg), palladium (Pd), lithium (Li), calcium (Ca), alloys of the aforementioned metals, other suitable metal materials or combinations thereof, but are not limited thereto. In addition, according to some embodiments, the active layer 114 may include a charge generation layer (not shown), a hole injection layer (not shown), an electron injection layer (not shown), a hole transport layer (not shown), an electron transport layer (not shown), an organic light emitting layer (not shown) disposed between the hole transport layer and the electron transport layer, and an additive material (not shown) for improving electron-hole transport, but are not limited thereto.

[0107] It is worth noting that since the first electrode 110 needs to be light-transmissive, it needs to maintain a relatively thin thickness. This may increase the impedance of the first electrode 110, resulting in uneven brightness of light emitted by different electronic units 100a, 100b, and 100c. According to an embodiment of the present disclosure, the first electrode 110 can be electrically connected to the signal line CL via the conductive structure 200, thereby improving the voltage decay (IR drop) problem caused by the increased impedance.

[0108] In detail, the conductive structure 200 may include a first conductive pattern 200a, an insulating layer 205 disposed on the first conductive pattern 200a, and a second conductive pattern 200b disposed on the insulating layer 205. According to some embodiments, the first conductive pattern 200a may pass through the dielectric layer 201 to be electrically connected to the gate dielectric layer 203 and the signal line CL. Figure 2 as well as Figure 3 , the second conductive pattern 200b can be electrically connected to the first conductive pattern 200a via the first opening 205V-1 of the insulating layer 205. Furthermore, the first electrode 110 of the electronic unit 100a can be electrically connected to the signal line CL via the conductive structure 200. In detail, the first electrode 110 can be electrically connected to the second conductive pattern 200b of the conductive structure 200 via the opening 114V in the active layer 114. Furthermore, according to some embodiments, the second conductive pattern 200b and the second electrode 112 of the electronic unit 100a can be located in the same layer, for example, belonging to the same layer of the electronic device 10, and are formed together during the manufacturing process.

[0109] In addition, according to some embodiments, the insulating layer 205 further has a second opening 205V-2 overlapping the second conductive pattern 200b. Specifically, the second opening 205V-2 overlaps the second conductive pattern 200b in the normal direction of the substrate 102 (eg, the Z direction in the drawings). Figure 2 as well as Figure 3 As shown, in the top view of the electronic device 10, the opening 114V of the active layer 114 is located in the second opening 205V-2. In other words, the opening 114V of the active layer 114 overlaps with the second opening 205V-2 in the normal direction of the substrate 102. According to some embodiments, the size of the first opening 205V-1 of the insulating layer 205 is smaller than the size of the second opening 205V-2. In the top view of the electronic device 10, the second conductive pattern 200b may have a gourd-like shape or a circle-like shape, but is not limited thereto.

[0110] According to some embodiments, the material of the first conductive pattern 200a and the second conductive pattern 200b may include a metal conductive material, other suitable materials, or a combination thereof, but is not limited thereto. The metal conductive material may include, for example, copper (Cu), silver (Ag), gold (Au), tin (Sn), aluminum (Al), molybdenum (Mo), tungsten (W), chromium (Cr), nickel (Ni), platinum (Pt), titanium (Ti), palladium (Pd), iridium (Ir), rhodium (Rh), alloys of the aforementioned metals, other suitable metal conductive materials, or a combination thereof, but is not limited thereto. According to some embodiments, the insulating layer 205 may include an inorganic material, an organic material, or a combination thereof, but is not limited thereto. According to some embodiments, the inorganic material may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials, or a combination thereof, but is not limited thereto. According to some embodiments, the organic material may include, for example, perfluoroalkoxy alkane (PFA), polytetrafluoroethylene (PTFE), fluorinated ethylene propylene (FEP), polyethylene, other suitable materials or combinations thereof, but is not limited thereto.

[0111] In addition, if Figure 1 as well as Figure 3 As shown, according to some embodiments, the electronic device 10 may further include an insulating layer 204 and an insulating layer 207. The insulating layer 204 may be disposed between the first conductive pattern 200a and the second conductive pattern 200b, and may be disposed between the first conductive pattern 200a and the insulating layer 205. Furthermore, according to some embodiments, the insulating layer 207 may be used as a pixel definition layer (PDL). The insulating layer 207 may be disposed between the electronic unit 100a, the electronic unit 100b, and the electronic unit 100c to define the position of the electronic unit. The insulating layer 207 may be disposed on the insulating layer 205, and the insulating layer 207 may partially overlap with the second electrode 112 in the normal direction of the substrate 102 (e.g., the Z direction in the figure). According to some embodiments, the insulating layer 207 may be disposed in the first opening 205V-1 of the insulating layer 205. According to some embodiments, the second conductive pattern 200b may be electrically connected to the first conductive pattern 200a via the first opening 205V-1 of the insulating layer 205, or the second conductive pattern 200b may be electrically connected to the first conductive pattern 200a via a common opening (not shown) of the insulating layer 204 and the insulating layer 205, but is not limited thereto.

[0112] According to some embodiments, the materials of the insulating layer 204 and the insulating layer 207 may be the same or similar to the material of the insulating layer 205, which will not be repeated here. According to some embodiments, the material of the insulating layer 204 may be an inorganic material, which may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials or combinations thereof, but is not limited thereto.

[0113] Furthermore, if Figure 1 As shown, according to some embodiments, the light blocking layer 400 may include a first color filter layer 400a, a second color filter layer 400b, and a third color filter layer 400c stacked on each other, and the first color filter layer 400a, the second color filter layer 400b, and the third color filter layer 400c have different colors. The color filter layer may filter or adjust the optical properties of the light passing through it, for example, allowing light of a specific wavelength range to pass. According to some embodiments, the first color filter layer 400a, the second color filter layer 400b, and the third color filter layer 400c may be a blue filter layer, a green filter layer, and a red filter layer, respectively, but are not limited thereto. According to some embodiments, the first color filter layer 400a, the second color filter layer 400b, and the third color filter layer 400c may be disposed corresponding to the electronic unit 100a, the electronic unit 100b, and the electronic unit 100c, respectively.

[0114] It is worth noting that the mutually overlapping first color filter layer 400a, second color filter layer 400b and third color filter layer 400c have a relatively low transmittance for visible light. As mentioned above, the light blocking layer 400 including the mutually stacked first color filter layer 400a, second color filter layer 400b and third color filter layer 400c overlaps with the conductive structure 200 in the normal direction of the substrate, so it can be used to shield the conductive structure 200 and reduce the visibility of the conductive structure 200, thereby improving the display quality of the electronic device 10 and enhancing the overall performance of the electronic device. Furthermore, in the embodiment where the electronic device 10 is used as a sensing device, the conductive structure 200 can also shield stray light and reduce signal interference and other problems.

[0115] Please refer again Figure 1 According to some embodiments, the electronic device 10 may further include an encapsulation layer 209, which may be disposed on the first electrode 110 to reduce the influence of moisture or oxygen on the first electrode 110 and the underlying structure. According to some embodiments, the encapsulation layer 209 may have a multi-layer structure, for example, a structure having an inorganic layer, an organic layer, and an inorganic layer arranged in order (IOI).

[0116] According to some embodiments, the material of the inorganic layer of the encapsulation layer 209 may include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, other suitable materials or a combination thereof, but is not limited thereto. According to some embodiments, the organic material of the encapsulation layer 209 may include epoxy resin, silicone resin, acrylic resin (e.g., polymethyl methacrylate (PMMA)), polyimide, perfluoroalkoxy alkane (PFA), other suitable materials or a combination thereof, but is not limited thereto.

[0117] In addition, the electronic device 10 may include a substrate 302 disposed opposite to the substrate 102, and the substrate 302 may be used as a color filter substrate. The substrate 302 may include a rigid substrate or a flexible substrate. The material of the substrate 302 may be the same or similar to that of the substrate 102, and will not be repeated here.

[0118] The first color filter layer 400a, the second color filter layer 400b and the third color filter layer 400c may be disposed on the substrate 302. Furthermore, the light blocking layer 400 formed by stacking the first color filter layer 400a, the second color filter layer 400b and the third color filter layer 400c may also be disposed on the substrate 302.

[0119] According to some embodiments, the material of the color filter layer may include a color photoresist. The material of the color photoresist may include, for example, a polymer material and a pigment and a photosensitive material dispersed therein, but is not limited thereto.

[0120] According to some embodiments, the electronic device 10 may further include a light-proof layer 304, which may be disposed between the light blocking layer 400 and the conductive structure 200, and at least a portion of the light-proof layer 304 overlaps with the conductive structure 200. Specifically, in the normal direction of the substrate 102 (e.g., the Z direction in the drawings), the light-proof layer 304 may at least partially overlap with the conductive structure 200. The light-proof layer 304 may block the side light leakage generated by the reflection of the conductive structure 200, thereby improving the display quality. The light-proof layer 304 may include a substantially light-proof material.

[0121] According to some embodiments, the material of the opaque layer 304 may include black photoresist, black printing ink, black resin, metal, black metal, oxidized metal, carbon black material, resin material, photosensitive material, other suitable materials, or a combination thereof, but is not limited thereto. The detailed structure of the opaque layer 304 will be further described below.

[0122] In addition, according to some embodiments, the electronic device 10 may further include a light conversion layer 306, a light scattering layer 305, an insulating layer 301, and an adhesive layer 308. The light conversion layer 306 may be disposed on the second color filter layer 400b and the third color filter layer 400c and between two adjacent light-impermeable layers 304, and the light scattering layer 305 may be disposed on the first color filter layer 400a and between two adjacent light-impermeable layers 304, but is not limited thereto. The light scattering layer 305 may include a plurality of light scattering particles 3051. The insulating layer 301 may be disposed on the light-impermeable layer 304 and the light conversion layer 306. Furthermore, the adhesive layer 308 may be disposed between the insulating layer 301 and the encapsulation layer 209 to fix the substrate 201 and the substrate 302 in a pair.

[0123] According to some embodiments, the light conversion layer 306 may include light conversion particles 3061 and light conversion particles 3062, and the light conversion particles 3061 and the light conversion particles 3062 may include quantum dots, fluorescence, phosphorescence, other suitable materials, or a combination thereof. According to some embodiments, the material of the quantum dots may include indium phosphide (InP), indium arsenide (InAs), zinc selenide (ZnSe), cadmium selenide (CdSe), cadmium sulfide (CdS), cadmium telluride (CdTe), other suitable materials, or a combination thereof, but not limited thereto. According to some embodiments, the material of the insulating layer 301 may be the same as the material of the aforementioned insulating layer 204, and will not be repeated here. Furthermore, the adhesive layer 308 may include a material having adhesiveness. According to some embodiments, the material of the adhesive layer 308 may include optical clear adhesive (OCA), optical clear resin (OCR), pressure sensitive adhesive (PSA), acrylic adhesive, acrylic resin, other suitable materials, or a combination thereof, but not limited thereto.

[0124] Next, please refer to Figure 4 , Figure 4 The equivalent circuit diagram of the electronic device 10 according to some embodiments of the present disclosure is shown. Figure 4 As shown, one end of the electronic unit 100a can be coupled to the signal line CL to receive the shared voltage Vss, and the other end can be coupled to the thin film transistor (labeled as T1 and T2 in the circuit diagram), and can be coupled to the storage capacitor Cst. According to some embodiments, the thin film transistor T1 can be a switch transistor, and the thin film transistor T2 can be a drive transistor. The thin film transistor T1 can receive the signal of the data line voltage Vdata and the scan line voltage SN to control the switch, and the thin film transistor T2 can receive the working voltage Vdd and the signal of the thin film transistor T1 to control the driving of the electronic unit 100a.

[0125] Next, please refer to Figure 5 , Figure 5 The cross-sectional structure diagram of the electronic device 20 according to some other embodiments of the present disclosure is shown. For the sake of clarity, some components of the electronic device 20 may be omitted in the drawings, and only some components are schematically shown. According to some embodiments, additional features may be added to the electronic device 20 described below. In addition, it should be understood that the components or components that are the same or similar to those in the previous text will be represented by the same or similar reference numerals, and their materials, manufacturing methods and functions are the same or similar to those described in the previous text, so this part will not be repeated in the following text.

[0126] Figure 5 The electronic device 20 is shown as an embodiment having a single substrate. Specifically, the electronic device 20 may also include a substrate 102, a signal line CL (not shown) disposed on the substrate 102, a gate dielectric layer 203, a thin film transistor TFT, an electronic unit layer 100, a conductive structure 200, and a packaging layer 209. The electronic unit layer 100 includes an electronic unit 100a, an electronic unit 100b, and an electronic unit 100c. In this embodiment, the opaque layer 304 and the light conversion layer 306 are disposed on the packaging layer 209, the first color filter layer 400a, the second color filter layer 400b, and the third color filter layer 400c are disposed on the opaque layer 304, and the first color filter layer 400a, the second color filter layer 400b, and the third color filter layer 400c are disposed in a groove defined by the opaque layer 304. In other words, the light blocking layer 400 is also disposed in the groove defined by the opaque layer 304.

[0127] Furthermore, in this embodiment, the electronic device 20 may further include a low refractive index layer 303, and the low refractive index layer 303 may be disposed on the insulating layer 301 and between the light blocking layer 400 and the light-impermeable layer 304. According to some embodiments, the material of the low refractive index layer 303 may include a low refractive index material. According to some embodiments, the material of the low refractive index layer 303 may include an inorganic material, an organic material, a combination of a high refractive index and a low refractive index inorganic material, other suitable materials, or a combination of the foregoing, but is not limited thereto. It should be understood that, although not shown in the drawings, the aforementioned electronic device 10 may also have a low refractive index layer 303.

[0128] In addition, the electronic device 20 may further include an insulating layer 307, a cover layer 309 and an optical film 311 sequentially disposed on the light blocking layer 400. The insulating layer 307 may serve as a flat layer, the cover layer 309 may have a protective effect (eg, waterproof and moisture-proof), and the optical film 311 may have an anti-reflection effect.

[0129] According to some embodiments, the material of the insulating layer 307 may be the same as or similar to the material of the aforementioned insulating layer 205, and will not be repeated here. According to some embodiments, the material of the cover layer 309 may include an organic material. According to some embodiments, the cover layer 309 may include an adhesive material, such as an optical clear adhesive (OCA), an optical clear resin (OCR), a pressure sensitive adhesive (PSA), an acrylic adhesive, an acrylic resin, other suitable materials, or a combination of the foregoing, but not limited thereto. The optical film 311 may include a multilayer film structure in which a high refractive index layer and a low refractive index layer are alternately stacked.

[0130] Similarly, in this embodiment, the light blocking layer 400 overlaps with the conductive structure 200 in the normal direction of the substrate 102 (e.g., the Z direction in the drawings). The light blocking layer 400 can also be used to shield the conductive structure 200, reduce the visibility of the conductive structure 200, and thus improve the display quality of the electronic device 20 and enhance the overall performance of the electronic device. Furthermore, in the embodiment where the electronic device 20 is used as a sensing device, the conductive structure 200 can also shield stray light and reduce problems such as signal interference. In addition, it should be understood that this embodiment only schematically shows the structure and position of the conductive structure 200. In fact, at least a portion of the opaque layer 304 also overlaps with the conductive structure 200. Specifically, in the normal direction of the substrate 102 (e.g., the Z direction in the drawings), the opaque layer 304 can at least partially overlap with the conductive structure 200. The opaque layer 304 can block the side light leakage generated by the reflection of the conductive structure 200 and improve the display quality.

[0131] Next, please refer to Figure 6 as well as Figure 7 , Figure 6 A schematic diagram showing a top view of some components of the electronic device 10 according to some embodiments of the present disclosure is shown. Figure 7 According to some embodiments of the present disclosure, along Figure 6 1 is a cross-sectional view of the electronic device 10 taken along the section line BB' in FIG. Figure 6 as well as Figure 7 The electronic device 10 includes a substrate 302 , a light-impermeable layer 304 , a light blocking layer 400 , an electronic unit 100 a , an electronic unit 100 b , and an electronic unit 100 c .

[0132] like Figure 6 as well as Figure 7As shown, according to some embodiments, the light-proof layer 304 has a multiple surrounding structure, and the light-proof layer 304 can be disposed around the electronic unit 100a, the electronic unit 100b, the electronic unit 100c, and the light blocking layer 400. Furthermore, the light-proof layer 304 can be further surrounded into a plurality of hollow areas 304w, and the hollow areas 304w are disposed adjacent to and around the electronic unit 100a, the electronic unit 100b, the electronic unit 100c, and the light blocking layer 400.

[0133] For detailed structure of the opaque layer 304, please refer to FIG. 8A to FIG. 8G , FIG. 8A to FIG. 8G Different aspects of the opaque layer 304 are shown according to some embodiments of the present disclosure.

[0134] In detail, the opaque layer 304 may include a first portion P1, a second portion P2, and a plurality of connecting portions PN, wherein the second portion P2 surrounds the first portion P1, and the plurality of connecting portions PN connect the first portion P1 and the second portion P2. The first portion P1 may overlap with the conductive structure 200, and in detail, in the top view, the first portion P1 may overlap with the second conductive pattern 200b of the conductive structure 200. According to some embodiments, the center C1 of the second opening 205V-2 of the second conductive pattern 200b does not overlap with the center C0 of the opaque layer 304, and the center C1 of the second opening 205V-2 deviates from the center C0 of the opaque layer 304. According to some embodiments, the center C1 of the second opening 205V-2 of the second conductive pattern 200b may be located in the first portion P1 of the opaque layer 304.

[0135] Furthermore, in the top view of the electronic device 10, the second portion P2 has two opposite outer edges, the outer edge e1 and the outer edge e2, and the distance between the two opposite outer edges e1 and the outer edge e2 is h, and one of the two opposite outer edges close to the second opening 205V-2 (for example, at Fig. 8A There is a distance D between the outer edge e1) in the second opening 205V-2 and the center C1, and the distance D satisfies the following formula: 0.1h≤D<0.5h. That is, the distance D is greater than or equal to 0.1 times the distance h, and less than 0.5 times the distance h.

[0136] According to an embodiment of the present disclosure, the center C0 refers to the geometric center of the second portion P2 of the opaque layer 304, and the center C1 refers to the geometric center of the second opening 205V-2 of the second conductive pattern 200b. The aforementioned distance h refers to the minimum distance between the two edges measured at the middle third of the width W0 of the second portion P2 (labeled as W0'). The distance D refers to the minimum distance between the center C1 of the second opening 205V-2 and the outer edge e1 or the outer edge e2.

[0137] Furthermore, according to the embodiments of the present disclosure, an optical microscope (OM), a scanning electron microscope (SEM), an α-step, an ellipsometer, or other suitable methods may be used to measure the distance, spacing, angle between components, or the width or thickness of each component. Specifically, according to some embodiments, a scanning electron microscope may be used to obtain a cross-sectional image of a structure and measure the distance, spacing, angle between components, or the width or thickness of each component.

[0138] It is worth noting that when the distance h and the distance D satisfy the above formula: 0.1h≤D<0.5h, the second opening 205V-2 of the second conductive pattern 200b is closer to the opaque layer 304, which can enhance the effect of the opaque layer 304 in blocking the light reflected by the second conductive pattern 200b, further reduce side light leakage, and improve light extraction efficiency.

[0139] Although FIG. 8B to FIG. 8G The center C1, distance h and distance D are not indicated, but FIG. 8B to FIG. 8G The distance h and the distance D of the light-proof layer 304 shown also meet the above formula: 0.1h≤D<0.5h. In addition, according to some embodiments, the first portion P1 of the light-proof layer 304 may be circular, elliptical, quadrilateral, rectangular or other suitable shapes, but not limited thereto. According to some embodiments, the second portion P2 of the light-proof layer 304 may also be circular, elliptical, quadrilateral, rectangular or other suitable shapes, but not limited thereto. In addition, the first portion P1 and the second portion P2 of the light-transmitting layer 304 may have contours such as chamfers and arc angles, but not limited thereto.

[0140] Next, please refer to Fig. 9 , Fig. 9 The top view of the electronic device 10 is shown in some embodiments of the present disclosure. It should be understood that: Fig. 9 Only some components of the electronic device 10 are shown to illustrate the configuration relationship between the electronic unit 100 a , the electronic unit 100 b , the electronic unit 100 c and the conductive structure 200 .

[0141] like Fig. 9As shown, the electronic unit 100a, the electronic unit 100b and the electronic unit 100c are sub-units in a unit and define a unit center C2. For example, the electronic unit 100a, the electronic unit 100b and the electronic unit 100c form a unit, and the electronic unit 100a, the electronic unit 100b and the electronic unit 100c are sub-units respectively. Taking the electronic unit as a light-emitting unit as an example, the electronic unit 100a, the electronic unit 100b and the electronic unit 100c can be sub-pixels and can form a pixel. Furthermore, the electronic unit 100a and another adjacent electronic unit 100a (labeled as 100a-1 in brackets for convenience of explanation) are arranged at a spacing J1 along a first direction (for example, the Y direction in the figure), and in the top view of the electronic device 10, the second opening 205V-2 and the unit center C2 have a distance E1 along the first direction, and the distance E1 satisfies the following formula: 0.05J1≤E1≤0.45J1. That is, the distance E1 is greater than or equal to 0.05 times the pitch J1 and less than or equal to 0.45 times the pitch J1.

[0142] In addition, in the top view of the electronic device 10, the electronic unit 100a and another adjacent electronic unit 100a (marked as 100a-2 in brackets for convenience of explanation) are arranged at a pitch J2 along the second direction (e.g., the X direction in the drawings), and the second opening 205V-2 and the unit center C2 have a distance E2 along the second direction perpendicular to the first direction (e.g., the X direction in the drawings), and the distance E2 satisfies the following formula: 0.2J2≤E2≤0.8J2. That is, the distance E2 is greater than or equal to 0.2 times the pitch J2, and less than or equal to 0.8 times the pitch J2.

[0143] According to an embodiment of the present disclosure, the spacing J1 and the spacing J2 refer to the minimum distance between the geometric centers Ca of adjacent electronic units 100a of the same type (for example, electronic units emitting light of the same color), and the unit center C2 refers to the center of a triangle (as indicated by a dotted line) formed by connecting the geometric center Ca of the electronic unit 100a, the geometric center Cb of the electronic unit 100b, and the geometric center Cc of the electronic unit 100c. Furthermore, the distance E1 and the distance E2 refer to the minimum distance between the center C1 of the second opening 205V-2 of the second conductive pattern 200b and the unit center C2.

[0144] It is worth noting that when the spacing J1 and the distance E1 satisfy the above formula: 0.05J1≤E1≤0.451J, or when the spacing J2 and the distance E2 satisfy the above formula: 0.2J2≤E2≤0.8J2, the reflected light of the second conductive pattern 200b can be reduced to interfere with adjacent electronic units, thereby improving the overall performance of the electronic device 10.

[0145] In summary, according to the embodiments of the present disclosure, the provided electronic device includes a conductive structure that electrically connects the electrodes of the electronic unit to the signal lines. The conductive structure can reduce the voltage decay problem caused by the high impedance of the electrodes, and the conductive structure overlaps with the light blocking layer, thereby improving the obvious visibility of the conductive structure, thereby improving the display quality degradation or signal interference of the electronic device, and improving the overall performance of the electronic device.

[0146] Although the embodiments and advantages of the present disclosure have been disclosed as above, it should be understood that any person skilled in the art can make changes, substitutions and modifications without departing from the spirit and scope of the present disclosure. The features between the embodiments of the present disclosure can be mixed and matched as needed as long as they do not violate the spirit of the invention or conflict with each other. In addition, the scope of protection of the present disclosure is not limited to the processes, machines, manufacturing, material compositions, devices, methods and steps in the specific embodiments described in the specification. Any person skilled in the art can understand the current or future developed processes, machines, manufacturing, material compositions, devices, methods and steps from the disclosure of the present disclosure, as long as they can implement substantially the same functions or obtain substantially the same results in the embodiments described herein, they can all be used according to the present disclosure. Therefore, the scope of protection of the present disclosure includes the above-mentioned processes, machines, manufacturing, material compositions, devices, methods and steps. The scope of protection of the present disclosure shall be subject to the scope of the appended claims. Any embodiment or claim of the present disclosure does not need to achieve all the purposes, advantages and features disclosed in this disclosure.

Claims

1. An electronic device, characterized in that: include: a substrate; A signal line is disposed on the substrate; a first electronic unit, disposed on the substrate and comprising a first electrode; a conductive structure disposed on the substrate and comprising a first conductive pattern, an insulating layer disposed on the first conductive pattern, and a second conductive pattern disposed on the insulating layer, wherein the second conductive pattern is electrically connected to the first conductive pattern via a first opening of the insulating layer, and the first electrode is electrically connected to the signal line via the conductive structure; as well as A light blocking layer overlaps the conductive structure.

2. The electronic device according to claim 1, wherein: The first electronic unit further includes a second electrode and an active layer, wherein the second electrode is disposed under the first electrode, the active layer is disposed between the first electrode and the second electrode, wherein the first electrode is electrically connected to the second conductive pattern via an opening in the active layer.

3. The electronic device according to claim 2, wherein: The insulating layer further has a second opening overlapping the second conductive pattern, and in a top view of the electronic device, the opening of the active layer is located in the second opening.

4. The electronic device as claimed in claim 2, characterized in that: The second conductive pattern and the second electrode are located in the same layer.

5. The electronic device according to claim 1, wherein: The light blocking layer includes a first color filter layer, a second color filter layer and a third color filter layer which are stacked on each other, wherein the first color filter layer, the second color filter layer and the third color filter layer have different colors.

6. The electronic device as claimed in claim 5, characterized in that: The first color filter layer, the second color filter layer and the third color filter layer are respectively a red color filter layer, a green color filter layer and a blue color filter layer.

7. The electronic device as claimed in claim 1, characterized in that: The invention further comprises a light-proof layer, which is disposed between the light-blocking layer and the conductive structure, wherein at least a portion of the light-proof layer overlaps with the conductive structure.

8. The electronic device as claimed in claim 7, characterized in that: The light-proof layer includes a first portion, a second portion and a plurality of connecting portions, wherein the first portion overlaps with the conductive structure, the second portion surrounds the first portion, and the plurality of connecting portions connect the first portion and the second portion.

9. The electronic device as claimed in claim 8, characterized in that: The insulating layer further has a second opening overlapping the second conductive pattern, wherein in a top view of the electronic device, the second portion has two opposite outer edges, and a distance between the two opposite outer edges is defined as h, wherein a distance D between one of the two opposite outer edges close to the second opening and a center of the second opening satisfies the following formula: 0.1h≤D<0.5h.

10. The electronic device as claimed in claim 8, characterized in that The electronic device further comprises a second electronic unit, a third electronic unit and a fourth electronic unit, wherein the first electronic unit, the second electronic unit and the third electronic unit are sub-units in a unit and define a unit center, the insulating layer further has a second opening overlapping the conductive structure, wherein the first electronic unit and the fourth electronic unit are arranged at a spacing J along a first direction, wherein in a top view of the electronic device, a distance E1 between the second opening and the unit center along the first direction satisfies the following formula: 0.05J≤E1≤0.45J.

11. The electronic device according to claim 8, wherein: The electronic device further comprises a second electronic unit, a third electronic unit and a fourth electronic unit, wherein the first electronic unit, the second electronic unit and the third electronic unit are sub-units in a unit and define a unit center, the insulating layer further has a second opening overlapping the conductive structure, wherein the first electronic unit and the fourth electronic unit are arranged at a spacing J along a first direction, wherein in a top view of the electronic device, a distance E2 between the second opening and the unit center along a second direction perpendicular to the first direction satisfies the following formula: 0.2J≤E2≤0.8J.

12. The electronic device as claimed in claim 1, wherein: The signal line is used for receiving a shared voltage.

13. The electronic device as claimed in claim 1, wherein: It is a display device.

14. The electronic device as claimed in claim 1, wherein: The first electronic unit is a light-emitting unit.

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