Apparatus and method for manufacturing semiconductor device

Abstract

An apparatus (10) for manufacturing a semiconductor device includes: a wafer holding device (12) that holds one or more chips (100) adhered and held on a surface of a dicing tape (120) together with the dicing tape (120); a pickup head (14) that picks up the target chip (100); an energy irradiation device (16) that irradiates energy from the back surface side of the dicing tape (120) toward the target chip (100) so as to reduce the adhesive force of the dicing tape (120); a temperature sensor (44) that detects a temperature in an irradiation region of the energy; and a controller (22) that controls the driving of the energy irradiation device (16) on the basis of the temperature detected by the temperature sensor (44).

Description

Technical Field

[0001] This specification discloses a manufacturing device and a manufacturing method for manufacturing a semiconductor device by bonding a chip to a substrate. Background Art

[0002] When manufacturing semiconductor devices, chips are bonded to substrates. Before being bonded to the substrate, the chips are attached to a sheet called dicing tape. In the bonding process, a pickup head is used to peel off the chips attached to the dicing tape and pick them up. The picked-up chips are bonded to the substrate using the pickup head.

[0003] Here, in order to peel the chip from the dicing tape, mechanical force is often applied to the chip. For example, in order to peel the chip, the chip is pulled in the direction of separation from the dicing tape. However, in such a case, there is a risk that the chip is damaged by the mechanical force.

[0004] In recent years, some have proposed using a non-contact pickup device that picks up the chip without contacting the chip. However, the suction force of the non-contact pickup device is small, so the non-contact pickup device may not be able to peel the chip from the dicing tape.

[0005] Therefore, some have proposed using a dicing tape having a self-peeling adhesive layer (e.g., Patent Document 1, Patent Document 2, etc.). The self-peeling adhesive layer is a layer whose adhesive force is reduced by being irradiated with light or heat, i.e., energy. If a chip is adhered to the dicing tape and irradiated with energy just before picking up, no mechanical load is applied to the chip, and the chip can be peeled off the self-peeling tape even if the suction force of the pickup device is small.

[0006] Prior art literature

[0007] Patent Literature

[0008] Patent Document 1: Japanese Patent Application Publication No. 2007-194433

[0009] Patent Document 2: Japanese Patent Application Publication No. 2012-199442 Summary of the invention

[0010] Problems to be solved by the invention

[0011] However, when using a self-peeling dicing tape, the dicing tape will of course be irradiated with light or heat, i.e., energy. When the dicing tape or the chip is exposed to the irradiation and the temperature rises excessively, the chip will be damaged. Therefore, when using a self-peeling dicing tape, the amount of irradiation energy per unit time needs to be suppressed to a low level to prevent the temperature of the dicing tape and the chip from becoming too high. As a result, the time required for chip peeling and even the time required for chip picking is extended.

[0012] Therefore, this specification discloses a semiconductor device manufacturing apparatus and a manufacturing method that can further reduce the time required for chip pickup.

[0013] Technical means of solving problems

[0014] The manufacturing device of the semiconductor device disclosed in the present specification is a manufacturing device for manufacturing semiconductor devices by picking up chips from a dicing tape and joining them to a joining object, and is characterized in that it includes: a chip holding unit, which holds one or more chips adhered to the surface of the dicing tape together with the dicing tape; a pickup head, which picks up a chip as a pickup object, i.e., an object chip, from the one or more chips; an energy irradiation unit, which irradiates light or heat, i.e., energy, from the back side of the dicing tape toward the object chip to reduce the adhesion of the dicing tape; a temperature sensor, which detects the temperature in the irradiation area of ​​the energy; and a controller, which controls the drive of the energy irradiation unit based on the detected temperature in the temperature sensor.

[0015] In the above case, the controller may perform feedback control on the intensity of the energy so that the detected temperature becomes a predetermined target temperature, and the target temperature may be lower than the heat resistance temperature of each of the chip and the dicing tape.

[0016] Furthermore, when the detected temperature changes, the controller may determine that the target chip has been peeled off from the dicing tape, and cause the energy irradiation unit to reduce the irradiation intensity of energy while causing the pickup head to pick up the target chip.

[0017] Furthermore, the energy irradiation unit may include a plurality of light sources, the temperature sensor may detect the temperature of each irradiation area obtained by partitioning the target chip, and the controller may control the plurality of light sources independently based on the temperature corresponding to the irradiation area.

[0018] The manufacturing method of a semiconductor device disclosed in the present specification is a manufacturing method of a semiconductor device by picking up a chip from a dicing tape and joining it to a joining object, and is characterized in that the method is: in a state where the chip is adhered and held on the surface of the dicing tape, light or heat, i.e., energy, is irradiated from the back side of the dicing tape toward a chip that is a pickup object, i.e., an object chip, to reduce the adhesion of the dicing tape; after the adhesion of the adhesive layer of the dicing tape is reduced due to the irradiation of the energy, the object chip is picked up by a pickup head; and further, the temperature in the irradiation area is detected in parallel with the irradiation of the energy, and the irradiation intensity of the energy is adjusted based on the detected temperature.

[0019] Effects of the Invention

[0020] By using the technology disclosed in this specification, the temperature in the energy irradiation area is detected, and the drive of the energy irradiation unit is controlled based on the detected temperature, so that the temperature of the target chip and the dicing tape can be prevented from becoming too high. As a result, the intensity of the irradiation energy can be enhanced, so the time required to peel the target chip from the dicing tape and even the time required to pick it up can be shortened. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] [ Figure 1 ] is a diagram showing the structure of a manufacturing device.

[0022] [ Figure 2 ] is a diagram showing the structure of the energy irradiation device.

[0023] [ Figure 3 ] is a schematic diagram showing the situation shortly after the dicing tape is irradiated with energy.

[0024] [ Figure 4 ] is a schematic diagram showing the situation of chip peeling due to energy irradiation.

[0025] [ Figure 5 ] is a flowchart showing the process of picking processing.

[0026] [ Figure 6 ] is in accordance with Figure 5 A timing diagram of the picking process of the process.

[0027] [ Figure 7 ] is a flowchart showing another example of the process of picking processing.

[0028] [ Figure 8 ] is in accordance with Figure 7 A timing diagram of the picking process of the process.

[0029] [ Fig. 9 ] is a diagram showing an example of control of energy irradiation intensity.

[0030] [ Fig.10 ] is a timing diagram of the picking process of the conventional example. DETAILED DESCRIPTION

[0031] Hereinafter, the structure of the semiconductor device manufacturing apparatus 10 will be described with reference to the drawings. Figure 1 1 is a diagram showing the structure of a manufacturing device 10. The manufacturing device 10 picks up a chip 100 from a dicing tape 120 and joins it to a substrate 110 or another chip 100, i.e., a joining object, to manufacture a semiconductor device. The chip 100 is provided with a joining material on one side thereof, and is joined to the joining object by pressing the said side against the joining object. In addition, hereinafter, the surface of the chip 100 on which the joining material is formed is referred to as a "joining surface 102", and the surface on the opposite side thereof is referred to as a "holding surface 104". In addition, in the following drawings, the joining surface 102 is illustrated by a thick line.

[0032] When the chip 100 is bonded to the bonding object, the chip 100 may be heated or kept at room temperature. That is, the bonding material of the chip 100 may be heated and melted, and the bonding material may be fused to the bonding object. In addition, as another form, the chip 100 may also be bonded to the bonding object at room temperature by utilizing atomic bonding force or molecular bonding force.

[0033] In order to bond the chip 100 to the bonding object, the manufacturing device 10 has a mounting head 18 and a stage 20. The stage 20 is a stage on which the substrate 110 is mounted. The mounting head 18 is arranged to face the stage 20, and the holding surface 104 of the chip 100 is sucked and held at its end. In other words, the mounting head 18 holds the chip 100 in such a manner that the bonding surface 102 of the chip 100 faces the stage 20. By the relative movement of the mounting head 18 with respect to the stage 20, the chip 100 is pressed against the bonding object.

[0034] In order to supply the chip 100 to the mounting head 18, the manufacturing device 10 is further provided with a wafer holding device 12, a pickup device (hereinafter referred to as a "PU device") 14, and an energy irradiation device 16. The wafer holding device 12 holds the wafer together with the dicing tape 120. The wafer is previously attached to the dicing tape 120 and then cut into individual chips 100. Therefore, a plurality of chips 100 are arranged on the surface of the dicing tape 120. As described in detail later, the dicing tape 120 has a base material 122 and an adhesive layer 124, and each chip 100 is held by the adhesive force of the adhesive layer 124. A wafer ring 130 is installed on the dicing tape 120 in a manner surrounding the wafer. The plurality of chips 100 are held by the dicing tape 120 in a posture (so-called face-up posture) in which the holding surface 104 is in contact with the adhesive layer 124 and the bonding surface 102 is facing upward.

[0035] The wafer holding device 12 is a device for holding the dicing tape 120 while applying tension to the outside of the surface direction, and includes an expansion ring 24 and a ring pressure plate 26. The expansion ring 24 is a substantially cylindrical member having a through hole extending in the axial direction, and a flange extending radially outward is provided at its lower end. The inner diameter of the expansion ring 24 is larger than the diameter of the wafer and smaller than the inner diameter of the wafer ring 130.

[0036] The dicing tape 120 is placed on the expansion ring 24. In addition, the wafer ring 130 mounted on the dicing tape 120 is pressed against and fixed to the flange of the expansion ring 24 by the ring pressing plate 26. At this time, the dicing tape 120 covers the upper end of the through hole of the expansion ring 24, and the dicing tape 120 can be accessed from the bottom through the through hole.

[0037] The PU device 14 holds the chip 100 in a face-up state and lifts it from the dicing tape 120 for picking up. After picking up, the PU device 14 changes the chip 100 to a face-down position and directly or indirectly transfers it to the mounting head 18. The PU device 14 has a PU head 28, and the PU head 28 is as shown in FIG. Figure 1 As shown in FIG. 1 , the PU head 28 is arranged to face the bonding surface 102 of the chip 100, thereby holding the bonding surface 102 of the chip 100 (hereinafter referred to as the "target chip 100") that is the object of pickup. After picking up the target chip 100, the PU head 28 rotates 180 degrees to change the target chip 100 to a face-down posture. The PU device 14 delivers the target chip 100 in the face-down posture to the mounting head 18. In addition, Figure 1 In the embodiment, the target chip 100 is directly delivered from the PU device 14 to the mounting head 18, but it may be delivered via another device.

[0038] The energy irradiation device 16 is provided on the back side of the dicing tape 120, that is, on the side opposite to the PU device 14 across the dicing tape 120. The energy irradiation device 16 irradiates energy toward the target chip 100 to reduce the adhesive force of the dicing tape 120. The type of energy can be selected according to the characteristics of the adhesive layer 124 of the dicing tape 120. In this example, light is irradiated as energy, and more specifically, ultraviolet (UV) light is irradiated. The reason for providing such an energy irradiation device 16 will be described later.

[0039] Figure 2 is a diagram showing the structure of the energy irradiation device 16. Figure 2As shown, the energy irradiation device 16 has a barrel 30. A circuit substrate 38 is installed inside the barrel 30. On the upper surface of the circuit substrate 38, a plurality of light sources 40 are arranged in a matrix. The light source 40 is, for example, an ultraviolet light emitting diode (UVLED) that outputs UV light. A through opening 32 is formed at the upper end of the barrel 30. A lens 34 that transmits UV light is embedded in the through opening 32.

[0040] In addition, a suction groove 36 is formed on the upper end surface of the cylinder 30 so as to surround the periphery of the through opening 32. The suction groove 36 is connected to the suction pump 42. When the target chip 100 is irradiated with UV light, the controller 22 makes the upper surface of the cylinder 30 contact with the dicing tape 120 and drives the suction pump 42. As a result, the cylinder 30 is in close contact with the back surface of the dicing tape 120, and part of the heat generated in the dicing tape 120 and the target chip 100 is transferred to the cylinder 30 to facilitate heat dissipation.

[0041] The energy irradiation device 16 further includes a temperature sensor 44 for detecting the temperature of the target chip 100 in the energy irradiation area. The temperature sensor 44 is not particularly limited as long as it can directly or indirectly detect the temperature of the dicing tape 120 or the target chip 100. Figure 2 In the example, the temperature sensor 44 is a contact temperature sensor, such as a thermocouple, mounted on the lower surface of the lens 34. There may be one or more temperature sensors 44. In addition, the temperature sensor 44 may be a non-contact temperature sensor that detects temperature in a non-contact manner, such as an infrared sensor. In the above case, the infrared sensor may be assembled on the circuit substrate 38 together with the light source 40. In either case, the reason for setting such a temperature sensor 44 will be described in detail later.

[0042] In addition, the energy irradiation device 16 can also selectively irradiate UV light in a certain area. In order to enable regional selective irradiation, the energy irradiation device 16 can change the position and / or posture of the light source 40 (e.g., UVLED). In addition, as another form, the energy irradiation device 16 can also be provided with a mask component for limiting the irradiation area between the light source 40 and the dicing tape 120. Furthermore, as another form, the energy irradiation device 16 can also have an optical component, such as a lens or a prism, that changes the irradiation direction and / or irradiation range of the UV light output from the light source 40. In either case, the energy irradiation device 16 changes the energy irradiation position according to the position of the target chip 100.

[0043] The controller 22 controls the driving of the mounting head 18, the PU device 14, and the energy irradiation device 16. The controller 22 is physically a computer having a processor 22a and a memory 22b.

[0044] In addition, as is clear from the description so far, the chip 100 is adhered and held on the dicing tape 120. Therefore, when picking up the chip 100, it is necessary to peel the chip 100 from the dicing tape 120. In the past, in order to peel the chip 100, a mechanical force was applied to the chip 100 in many cases. Specifically, in many cases, the chip 100 before peeling is sucked and held by the PU head 28, and the PU head 28 is raised. As the PU head 28 rises, a force in a direction of separation from the dicing tape 120 is applied to the chip 100, and the chip 100 is peeled from the dicing tape 120 by the force. In the above case, a load is applied to the chip 100, and the chip 100 is sometimes damaged.

[0045] In addition, in recent years, in order to prevent the mechanical contact between the PU head 28 and the bonding surface 102, a non-contact type PU head 28 is sometimes used. The non-contact type PU head 28 may have, for example, an air-spraying non-contact suction cup that sprays air in a radial or cyclonic manner to suck the chip 100, or an ultrasonic non-contact suction cup that uses ultrasonic waves to suck the chip 100. In either case, by using the non-contact type PU head 28, the quality of the bonding surface 102 of the chip 100 can be suppressed from being reduced. However, in the case of such a non-contact type PU head 28, the suction force of the chip 100 is low, so there is a risk that the chip 100 cannot be isolated from the dicing tape 120.

[0046] Therefore, in this example, in order to reduce the adhesive force of the dicing tape 120 before picking up, the energy irradiation device 16 is provided. Here, the dicing tape 120 handled in this example is described. Figure 3 , Figure 4 It is a schematic diagram showing a state of peeling of the chip 100 by the energy irradiation device 16 .

[0047] like Figure 3 , Figure 4As shown, the dicing tape 120 is formed by laminating a substrate 122 and an adhesive layer 124. The adhesive layer 124 is a UV self-peeling adhesive layer that loses its adhesive force by irradiating energy, more specifically, irradiating UV light, and then the object chip 100 automatically peels off. The UV self-peeling adhesive layer may, for example, contain a special acrylic polymer and a UV functional gas generator. When the UV self-peeling adhesive layer is irradiated with UV light, nitrogen gas is generated in the adhesive, and the gas is released to the outside of the adhesive and the interface of the adhesive surface, and the gas is stored at the bonding interface, thereby the bonded object is naturally peeled off. The substrate 122 only needs to be able to transmit UV light, for example, it can be composed of a sheet of transparent resin containing polypropylene (polyacryl), polyolefin, polycarbonate, vinyl chloride, acrylonitrile butadiene styrene (ABS), polyethylene terephthalate (PET), nylon, polyurethane, polyimide, etc. In addition, as another aspect, the base material 122 may be formed of a sheet having a mesh structure, a sheet having holes, or the like.

[0048] When the area of ​​the dicing tape 120 corresponding to the target chip 100 is irradiated with UV light by the energy irradiation device 16, as shown in FIG. Figure 4 As shown, the adhesive force of the region is reduced, and gas is generated from the adhesive layer 124 in the region, and the target chip 100 is automatically peeled off. In addition, by peeling the target chip 100 from the dicing tape 120, a large load is not applied to the target chip 100, and the target chip 100 can be picked up even if the suction force is small.

[0049] However, in the case of stripping using UV light, there is a problem that the process takes a long time. Fig.10 Provide explanation. Fig.10 1 is a timing diagram of a conventional pick-up process. Fig.10 In FIG. 1 , the first part indicates the Z position of the PU head 28, and the second part indicates the peeling condition of the target chip 100. Furthermore, the third part indicates the detected temperature Td obtained by the temperature sensor 44, and the fourth part indicates the irradiation condition of the UV light irradiated by the energy irradiation device 16. In addition, in the manufacturing device 10 of the conventional example, the temperature sensor 44 is not provided and the detected temperature Td is not detected, but Fig.10 , the detected temperature Td is shown in the figure for comparison with this example.

[0050] exist Fig.10In the prior art example, in order to peel the chip 100 from the dicing tape 120, UV light irradiation starts from time t1. When irradiated with UV light, the adhesive layer 124 of the dicing tape 120 gradually deteriorates and the adhesive force decreases. In addition, heat is generated in the dicing tape 120 and the chip 100 by irradiating with UV light. A part of this heat is released to the outside air directly or through the cylinder 30. However, when the intensity of the UV light is high and the energy supply is high compared to the heat dissipation rate, there is a risk that the target chip 100 or the dicing tape 120 will exceed its heat resistance temperature before the target chip 100 is peeled off and be damaged.

[0051] Therefore, in the conventional example, the intensity of UV light is suppressed to be low so that the target chip 100 and the dicing tape 120 do not exceed the heat resistance temperature before the target chip 100 is peeled off. Fig.10 In the prior art example, the intensity of UV light is suppressed to a low level by reducing the duty cycle D of the light source 40. As a result, Fig.10 As shown, the temperature of the target chip 100 rises gradually. On the other hand, while the temperature of the target chip 100 rises gradually, the adhesive layer 124 of the dicing tape 120 gradually deteriorates due to the UV light. As a result, the target chip 100 is peeled off from the dicing tape 120 at time t2.

[0052] However, in the conventional example, it is impossible to detect the peeling of the target chip 100, and the pickup is not started until a predetermined waiting time has passed since the UV light irradiation starts. Fig.10 In the conventional example, pickup is started at time t3 after a predetermined waiting time tw2 has elapsed from time t1, and irradiation with UV light is stopped.

[0053] In addition, if Fig.10 As shown, after the time t2 when the target chip 100 is peeled off, the rising speed of the detected temperature Td increases. This is because the heat generated in the adhesive layer 124 becomes difficult to transfer to the target chip 100 due to the peeling off of the target chip 100, and accordingly, the temperature rising speed of the dicing tape 120 increases.

[0054] As described above, conventionally, the UV light irradiation intensity is suppressed to be low so that the target chip 100 is surely peeled off and the target chip 100 and the dicing tape 120 do not exceed the heat resistance temperature before the predetermined standby time tw2 has passed. In such a case, it will take time until the pickup starts, thus prolonging the time required for picking up the target chip 100 and even the time required for manufacturing the semiconductor device.

[0055] Therefore, in this example, the temperature of the target chip 100 or the dicing tape 120 is detected directly or indirectly, and the intensity of the UV light is feedback-controlled so that the detected temperature Td does not exceed the predetermined target temperature T*. With such a structure, even if the irradiation intensity of the UV light is increased, damage to the target chip 100 and the like can be prevented. In addition, by increasing the irradiation intensity of the UV light, the time required for peeling the target chip 100 and even the time required for picking up can be shortened.

[0056] In addition, the target temperature T* is set to a value that does not exceed the heat resistance temperature of the target chip 100 and the dicing tape 120. To be specific, for example, the heat resistance temperature of the target chip 100 is set to Ta, the maximum error of the detected temperature Td of the target chip 100 relative to the actual temperature is set to Ea%, the heat resistance temperature of the dicing tape 120 is set to Tb, and the maximum error of the detected temperature Td of the dicing tape 120 relative to the actual temperature is set to Eb%. In this case, the target temperature T* is set to a value that satisfies both T*×(1+Ea / 100)<Ta and T*×(1+Eb / 100)<Tb. In other words, the target temperature T* is lower than Ta / (1+Ea / 100) and lower than Tb / (1+Eb / 100).

[0057] Figure 5 : is a flowchart showing the process of picking up the process in this example. Figure 5 As shown, the controller 22 first positions the energy irradiation device 16 relative to the target chip 100 (S10). If the energy irradiation device 16 can be properly positioned relative to the target chip 100, the controller 22 starts irradiation of UV light (S12). At this time, the duty cycle D is set to 100%.

[0058] After that, the controller 22 uses the detected temperature Td as a feedback value and performs feedback control on the duty cycle D (S14, S16). Specifically, the controller 22 calculates the offset ΔT between the detected temperature Td and the target temperature T* (S14), and increases or decreases the duty cycle D in proportion to the offset ΔT (S16). That is, when the proportional gain is set to Kp and the offset is set to b, it is set to D=ΔT×Kp+b. In addition, depending on the value of the offset ΔT, D may be greater than 100, but the duty cycle D is limited to 100%.

[0059] The controller 22 continues to perform the proportional feedback control of the duty cycle D until the elapsed time from the start of UV light irradiation reaches the predetermined standby time tw1 (S18). On the other hand, if the elapsed time reaches the predetermined standby time tw1, the controller 22 stops the UV light irradiation (S20) and drives the PU device 14 to start picking up the chip 100 (S22).

[0060] Figure 6 This is the timing diagram of the picking process in this example. Figure 6 In the example, the UV light irradiation starts at time t1. In this example, as described above, the detected temperature Td is used as the feedback value, and the duty cycle D is proportionally feedback controlled. Therefore, soon after the UV light irradiation starts, the UV light irradiation intensity is also kept high because the offset ΔT is large. Figure 6 In the example, before the detected temperature Td approaches the target temperature T*, the duty cycle D is 100%. As a result, the detected temperature Td, and even the temperature of the dicing tape 120 and the object chip 100, rises sharply. At time t2, when the detected temperature Td reaches the target temperature T*, the offset ΔT becomes smaller, so the controller 22 reduces the duty cycle D of the light source 40 to reduce the irradiation intensity of the UV light. As a result, the temperature rise of the object chip 100 can be suppressed, thereby preventing the object chip 100 and the dicing tape 120 from exceeding the heat resistance temperature. On the other hand, since the UV light is irradiated with high intensity before the target temperature T* is reached, the object chip 100 peels off from the dicing tape 120 relatively early. Figure 6 In the example shown in FIG. 2 , the target chip 100 is peeled off from the dicing tape 120 at time t3 .

[0061] On the other hand, at time t4 when the waiting time tw1 has passed since the UV light irradiation started, the target chip 100 is picked up and the UV light irradiation stops. Here, the waiting time tw1 is set as the time for the target chip 100 to be reliably peeled off. As described above, in this example, since the UV light is irradiated at a high intensity before reaching the target temperature T*, the waiting time tw1 can be greatly shortened compared with the waiting time tw2 of the conventional example. As a result, according to this example, the time required for picking up can be shortened.

[0062] In addition, Figure 5 , Figure 6 In the example, the target chip 100 is not picked up until the waiting time tw1 has passed after the target chip 100 is peeled off. However, the timing of peeling may be determined based on the change in the detected temperature Td, and if peeling is detected, the chip 100 is picked up immediately and the UV light irradiation is stopped.

[0063] That is, as described above, when the target chip 100 is peeled off, the heat transfer from the dicing tape 120 to the target chip 100 is hindered, and the temperature of the dicing tape 120 and even the detected temperature Td temporarily increases sharply. When the detected temperature Td temporarily increases sharply, it can also be determined that the target chip 100 has been peeled off, and the picking-up is started and the UV light irradiation is stopped.

[0064] Figure 7 FIG. 1 is a flowchart of the picking process in the above case. Figure 7 In the process of step S10 to step S16, Figure 5 On the other hand, Figure 7 In the example, after determining the duty cycle D, the controller 22 compares the differential value ΔTd=Td[i]-Td[i-1] of the detected temperature Td with the predetermined reference value Ast (S18'). When the result of the comparison is that the differential value ΔTd is greater than the reference value Ast, the controller 22 determines that a sharp increase in the detected temperature Td has occurred, and even the peeling of the target chip 100 has occurred. In the above case, the controller 22 stops the irradiation of UV light and simultaneously causes the PU device 14 to start picking up the target chip 100 (S20, S22).

[0065] Figure 8 is in accordance with Figure 7 The timing diagram of the picking process. Figure 8 In the example of FIG. 1 , at time t3, the object chip 100 is peeled off and the detected temperature Td rises sharply. If the controller 22 detects the sharp rise of the detected temperature Td, it immediately starts picking up and stops the UV light irradiation. Moreover, the time required for picking up can be further shortened.

[0066] As is clear from the above description, according to the technology disclosed in this specification, the temperature of the target chip 100 and the dicing tape 120 is directly or indirectly detected, and the irradiation intensity of the UV light is adjusted according to the detected temperature Td obtained. As a result, it is possible to prevent the target chip 100 and the dicing tape 120 from being damaged and shorten the time required for picking up the target chip 100.

[0067] In addition, the structure described so far is an example and can be changed appropriately. For example, the control mode of the irradiation intensity of UV light can also be changed appropriately. For example, instead of proportional control of the duty cycle D of the driving signal of the light source 40, proportional integral control or proportional integral differential control can be performed. In addition, as another form, it is also possible to Fig. 9 In the switching diagram, when the detected temperature Td crosses the target temperature T* in the increasing direction, the light source 40 is turned off (OFF), and when the detected temperature Td crosses the value (T*-α) in the decreasing direction, the light source 40 is turned on (ON).

[0068] In addition, the plurality of light sources 40 may be controlled independently of each other. For example, the detected temperature Td may be acquired for each irradiation area of ​​the plurality of light sources 40. Moreover, the ON / OFF of each of the plurality of light sources 40 may be independently controlled according to the detected temperature Td corresponding to the light source 40. By setting the structure as described above, the deviation of the temperature distribution may be suppressed. In the case, in order to acquire the plurality of detected temperatures Td, a plurality of contact temperature sensors may be provided, or the temperature distribution in the irradiation area may be acquired in the form of an image using a single infrared sensor.

[0069] In the above description, UV light is irradiated as energy, but the type of energy irradiated may be appropriately changed according to the characteristics of the dicing tape 120. For example, when the adhesive layer 124 of the dicing tape 120 is self-detached due to heat, the energy irradiation device 16 may irradiate heat as energy.

[0070] Description of Figure Numbers

[0071] 10: Manufacturing device

[0072] 12: Wafer holding device

[0073] 14: PU device

[0074] 16: Energy irradiation device

[0075] 18: Install the head

[0076] 20: Carrier

[0077] 22: Controller

[0078] 24: Expansion Ring

[0079] 26: Ring pressure plate

[0080] 28: PU head

[0081] 30: Cylinder

[0082] 32: Through the opening

[0083] 34: Lens

[0084] 36: Suction slot

[0085] 38: Circuit board

[0086] 40: Light Source

[0087] 42: Suction pump

[0088] 44: Temperature sensor

[0089] 100: Chip

[0090] 102: Joint surface

[0091] 104: Keep the face

[0092] 110: Substrate

[0093] 120: Cutting tape

[0094] 122: Base material

[0095] 124: Adhesive layer

[0096] 130: Wafer Ring

Claims

1. A semiconductor device manufacturing device, which is a semiconductor device manufacturing device that picks up a chip from a dicing tape and joins it to a joining object, The semiconductor device manufacturing device is characterized by comprising: a wafer holding portion for holding one or more of the chips adhered and held on the surface of the dicing tape together with the dicing tape; A pickup head that picks up a chip as a pickup target, that is, a target chip, from the one or more chips; an energy irradiation unit that irradiates light or heat, i.e., energy, from the back side of the dicing tape toward the target chip to reduce the adhesive force of the dicing tape; a temperature sensor for detecting a temperature in an area irradiated by the energy; as well as Controller, The controller controls driving of the energy irradiation unit based on the temperature detected by the temperature sensor.

2. The semiconductor device manufacturing apparatus according to claim 1, wherein: The controller performs feedback control on the intensity of the energy so that the detected temperature becomes a predetermined target temperature. The target temperature is lower than the heat resistance temperature of each of the chip and the dicing tape.

3. The semiconductor device manufacturing apparatus according to claim 1, wherein: When the detected temperature changes, the controller determines that the target chip has been peeled off from the dicing tape, and causes the energy irradiation unit to reduce the irradiation intensity of energy, while causing the pickup head to pick up the target chip.

4. The semiconductor device manufacturing apparatus according to claim 1, wherein: The energy irradiation unit includes a plurality of light sources. The temperature sensor detects the temperature of each irradiation area obtained by partitioning the target chip. The controller controls the plurality of light sources independently of one another based on a temperature corresponding to the irradiation area.

5. A method for manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device by picking up a chip from a dicing tape and bonding it to a bonding object, The method for manufacturing a semiconductor device is characterized in that: In a state where the chip is adhered and held on the surface of the dicing tape, light or heat, i.e., energy, is irradiated from the back side of the dicing tape toward the chip to be picked up, i.e., the target chip, to reduce the adhesion of the dicing tape. After the adhesive force of the adhesive layer of the dicing tape decreases due to the irradiation of the energy, the target chip is picked up by a pickup head. and then, detecting the temperature in the irradiation area in parallel with the irradiation of the energy, The irradiation intensity of energy is adjusted based on the detected temperature.

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