IGBT (Insulated Gate Bipolar Transistor) fault determination method and device for turn-on current

Abstract

The invention provides an IGBT (Insulated Gate Bipolar Translator) fault determination method and device for a turn-on current rise rate, and the method comprises the steps: obtaining a control relation between a chip grid voltage and a chip collector current according to a preset IGBT half-bridge circuit model; obtaining a turn-on current rising rate expression by using a control relation of a chip grid voltage to a chip collector current; the actual current of an IGBT collector electrode is collected, and an IGBT flow capacity value is obtained according to a preset current threshold value, the actual current of the IGBT collector electrode and the turn-on current rising rate expression; and determining an IGBT fault state according to the IGBT flow capacity value. According to the method, the defects of falling of the bonding wire in the device, abnormal contact of the chip electrode and the like are estimated by observing the rising rate of the turn-on current of the IGBT device, the IGBT fault is timely and accurately determined, the method has reference significance on IGBT state monitoring, and safe and stable operation of the IGBT device is effectively guaranteed.

Description

Technical Field

[0001] The present invention relates to the field of IGBT technology, and in particular to an IGBT fault determination method and device based on turn-on current rising rate. Background Art

[0002] IGBT devices have the advantages of fast switching speed of MOSFET devices and low conduction loss of bipolar devices, and have been widely used in new energy converters, flexible DC transmission equipment, dynamic reactive power compensation equipment and other occasions.

[0003] At present, methods such as junction temperature measurement and impedance parameter analysis are used for IGBT defect analysis, but there are problems such as inaccurate and untimely fault determination. Summary of the invention

[0004] In view of the problems existing in the prior art, the main purpose of the embodiments of the present invention is to provide a method and device for determining an IGBT fault based on the turn-on current rising rate, so as to achieve timely and accurate determination of the IGBT fault.

[0005] In order to achieve the above object, an embodiment of the present invention provides an IGBT fault determination method based on turn-on current rise rate, the method comprising:

[0006] According to the preset IGBT half-bridge circuit model, the control relationship between the chip gate voltage and the chip collector current is obtained;

[0007] Using the control relationship between chip gate voltage and chip collector current, the expression of turn-on current rising rate is obtained;

[0008] Collecting the actual current of the IGBT collector, and obtaining the IGBT flow capacity value according to the preset current threshold, the actual current of the IGBT collector and the expression of the turn-on current rise rate;

[0009] An IGBT fault state is determined according to the IGBT flow capacity value.

[0010] Optionally, in an embodiment of the present invention, according to a preset IGBT half-bridge circuit model, obtaining a control relationship between a chip gate voltage and a chip collector current includes:

[0011] According to the preset IGBT half-bridge circuit model, chip gate channel length, chip gate channel width and IGBT gate-emitter voltage, the control relationship between the chip gate voltage and the chip collector current is obtained.

[0012] Optionally, in an embodiment of the present invention, the control relationship between the chip gate voltage and the chip collector current is used to obtain the turn-on current rise rate expression, which includes:

[0013] Using the control relationship between the chip gate voltage and the chip collector current, determine the relationship between the IGBT collector current and the chip collector current;

[0014] According to the relationship between the IGBT collector current and the chip collector current, the expression for the turn-on current rising rate is obtained.

[0015] Optionally, in an embodiment of the present invention, determining the IGBT fault state according to the IGBT flow capacity value includes:

[0016] Comparing the IGBT flow capacity value with a preset capacity threshold to obtain a comparison result;

[0017] According to the comparison result, the IGBT fault state is determined.

[0018] The embodiment of the present invention further provides an IGBT fault determination device based on the turn-on current rise rate, the device comprising:

[0019] A control relationship module is used to obtain the control relationship between the chip gate voltage and the chip collector current according to a preset IGBT half-bridge circuit model;

[0020] The current rise rate module is used to obtain the turn-on current rise rate expression by using the control relationship between the chip gate voltage and the chip collector current;

[0021] A flow capacity module is used to collect the actual current of the IGBT collector and obtain the IGBT flow capacity value according to a preset current threshold, the actual current of the IGBT collector and the expression of the turn-on current rise rate;

[0022] The fault status module is used to determine the IGBT fault status according to the IGBT flow capacity value.

[0023] Optionally, in one embodiment of the present invention, the control relationship module is also used to obtain the control relationship between the chip gate voltage and the chip collector current based on a preset IGBT half-bridge circuit model, chip gate channel length, chip gate channel width and IGBT gate-emitter voltage.

[0024] Optionally, in one embodiment of the present invention, the current rise rate module includes:

[0025] The collector current unit is used to determine the relationship between the IGBT collector current and the chip collector current by using the control relationship between the chip gate voltage and the chip collector current;

[0026] The current rise rate unit is used to obtain the turn-on current rise rate expression according to the relationship between the IGBT collector current and the chip collector current.

[0027] Optionally, in one embodiment of the present invention, the fault status module includes:

[0028] A comparison result unit, used for comparing the IGBT flow capacity value with a preset capacity threshold value to obtain a comparison result;

[0029] The fault status unit is used to determine the IGBT fault status according to the comparison result.

[0030] The present invention also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the above method is implemented when the processor executes the program.

[0031] The present invention also provides a computer-readable storage medium, which stores a computer program for executing the above method by a computer.

[0032] The present invention also provides a computer program product, comprising a computer program / instruction, which implements the steps of the above method when the computer program / instruction is executed by a processor.

[0033] The present invention estimates defects such as internal bonding wire detachment and abnormal chip electrode contact of the device by observing the turn-on current rising rate of the IGBT device, thereby realizing timely and accurate determination of IGBT faults. This has reference significance for IGBT status monitoring and effectively ensures the safe and stable operation of the IGBT device. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0035] Figure 1 This is a flow chart of a method for determining an IGBT fault based on a turn-on current rise rate according to an embodiment of the present invention;

[0036] Figure 2 A flow chart for obtaining an expression for the turn-on current rising rate in an embodiment of the present invention;

[0037] Figure 3 A flow chart for determining an IGBT fault state in an embodiment of the present invention;

[0038] Figure 4 This is a schematic diagram of the structure of a commutation circuit in an embodiment of the present invention;

[0039] Figure 5 Schematic diagram of an IGBT gate circuit in an embodiment of the present invention;

[0040] Figure 6 This is a schematic structural diagram of an IGBT fault determination device based on a turn-on current rise rate according to an embodiment of the present invention;

[0041] Figure 7 This is a schematic diagram of the structure of a current rise rate module in an embodiment of the present invention;

[0042] Figure 8 This is a schematic diagram of the structure of a fault status module in an embodiment of the present invention;

[0043] Fig. 9 A schematic diagram of the structure of an electronic device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0044] The embodiment of the present invention provides an IGBT fault determination method and device based on turn-on current rising rate.

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] like Figure 1 The flowchart of the method for determining an IGBT fault by the turn-on current rise rate according to an embodiment of the present invention is shown. The execution subject of the method for determining an IGBT fault by the turn-on current rise rate provided by the embodiment of the present invention includes but is not limited to a computer. The present invention estimates defects such as the detachment of the bonding wire inside the device and abnormal chip electrode contact by observing the turn-on current rise rate of the IGBT device, thereby realizing timely and accurate determination of the IGBT fault, which has reference significance for IGBT status monitoring and effectively ensures the safe and stable operation of the IGBT device. Figure 1 The methods shown in include:

[0047] Step S1, obtaining a control relationship between a chip gate voltage and a chip collector current according to a preset IGBT half-bridge circuit model;

[0048] Step S2, using the control relationship between the chip gate voltage and the chip collector current to obtain the turn-on current rising rate expression;

[0049] Step S3, collecting the actual current of the IGBT collector, and obtaining the IGBT flow capacity value according to the preset current threshold, the actual current of the IGBT collector and the expression of the turn-on current rise rate;

[0050] Step S4, determining the IGBT fault state according to the IGBT current capacity value.

[0051] Among them, the preset IGBT half-bridge circuit model can be as follows Figure 4 Specifically, the IGBT device includes multiple chips. Figure 4 middleu GE is the gate voltage, u CE is the collector-emitter voltage (u chip,CE is the chip collector emitter voltage, L s,CE is the parasitic inductance of the IGBT device package), i C is the collector current ( Figure 4 By connecting multiple IGBT chips in parallel, C1 、i C2 ,…,i Cn The reference direction of the voltage and current is Figure 4 Winning bid.

[0052] Furthermore, L s,1 is the parasitic inductance of the IGBT working circuit, u s,1 is the voltage of the parasitic inductance of the IGBT working circuit, L s,CE is the parasitic inductance of the collector and emitter of the IGBT package, u s,CE is the voltage of the IGBT package collector-emitter parasitic inductance, u CE is the collector-emitter voltage of the IGBT device, u chip,CE is the chip collector-emitter voltage in the IGBT device, u GE is the gate-emitter voltage of the IGBT device, G is the IGBT gate, C is the IGBT collector, and E is the IGBT emitter. C is the DC capacitance, U DC is the DC capacitor voltage, i C is the collector current, i L is the load inductor current, I load is the load inductance.

[0053] Further, u chip,F is the freewheeling diode (FWD) chip voltage, u F is the freewheeling diode (FWD) device voltage, L s,F Parasitic inductance of the freewheeling diode (FWD) device package, u s,F The parasitic inductance voltage of the freewheeling diode (FWD) device package, L s,2 is the parasitic inductance of the freewheeling circuit, u s,2 is the parasitic inductance voltage of the freewheeling circuit.

[0054] As an embodiment of the present invention, according to a preset IGBT half-bridge circuit model, the control relationship between the chip gate voltage and the chip collector current is obtained, including: according to the preset IGBT half-bridge circuit model, the chip gate channel length, the chip gate channel width and the IGBT gate-emitter voltage, the control relationship between the chip gate voltage and the chip collector current is obtained.

[0055] Among them, Figure 5 The gate circuit topology is shown below. Among them, the gate input capacitance C ies , gate-emitter capacitance C GE , collector gate capacitance c GC , Gate turn-on power supply voltage U G,on , Gate turn-off supply voltage U G,off , Gate turn-off resistance R G,off , gate loop parasitic inductance L s,G G is the IGBT gate, C is the IGBT collector, and E is the IGBT emitter.

[0056] During the t1-t2 period, the chip gate voltage has a significant effect on the chip collector current i chip,C The control relationship is:

[0057]

[0058] In formula (1), μ n is the electron mobility, α pnp is the transistor transport coefficient, W is the gate channel width, L is the gate channel length, C ox is the gate channel capacitance per unit area.

[0059] As an embodiment of the present invention, Figure 2 As shown in the figure, using the control relationship between the chip gate voltage and the chip collector current, the expression for the turn-on current rise rate is:

[0060] Step S21, using the control relationship between the chip gate voltage and the chip collector current, determine the relationship between the IGBT collector current and the chip collector current;

[0061] Step S22, obtaining the expression of the turn-on current rising rate according to the relationship between the IGBT collector current and the chip collector current.

[0062] If n chips are connected in parallel inside the IGBT device, the collector current i C for:

[0063] i C =nl chip,C (2)

[0064] When the collector (or emitter) bonding wire inside the IGBT falls off (corresponding to welding devices), or the chip electrode contact is abnormal (corresponding to crimping devices), it will not affect the gate circuit charging process ( Figure 5 ). Since the collector (or emitter) in the defective area cannot be connected normally, the collector current cannot flow normally, and the corresponding chip current i chip,C =0.

[0065] When there are m chip collectors (or emitters) with abnormal contact inside the IGBT, the current rise rate di C / dt is shown in formula (3), which is the expression of the turn-on current rising rate.

[0066]

[0067] Furthermore, the actual current of the IGBT collector is collected, and a conventional current collection method can be used, which will not be described in detail here. The IGBT flow capacity value is obtained by using the expression based on the preset current threshold, the actual current of the IGBT collector and the turn-on current rising rate.

[0068] Specifically, the available flow capacity λ of the IGBT device is defined as the IGBT flow capacity value:

[0069]

[0070] λ=1, indicating that the device has no defects. The smaller λ is, the greater the possibility that the bonding wire of the device will fall off or the electrode contact will be poor.

[0071] Among them, using formulas (2) and (4), according to the actual current and theoretical current value of the collected IGBT collector, the number of chips connected in parallel, n, can be determined, and thus the current IGBT flow capacity value can be obtained through formula (4).

[0072] As an embodiment of the present invention, Figure 3 As shown, according to the IGBT flow capacity value, determining the IGBT fault state includes:

[0073] Step S41, comparing the IGBT flow capacity value with a preset capacity threshold to obtain a comparison result;

[0074] Step S42: determining the IGBT fault state according to the comparison result.

[0075] The preset capacity threshold can be set based on experience and can be adjusted according to actual working conditions. The IGBT flow capacity value is compared with the preset capacity threshold, and the comparison results include that the IGBT flow capacity value is greater than the preset capacity threshold, and the IGBT flow capacity value is not greater than the preset capacity threshold.

[0076] Furthermore, if the comparison result is that the IGBT current capacity value is greater than the preset capacity threshold, it means that problems such as collector (or emitter) bonding wire detachment (corresponding to welding device) or abnormal chip electrode contact (corresponding to crimping device) occur inside the IGBT.

[0077] Furthermore, according to the current rise rate di C / dt, the available current capacity of the IGBT device is obtained, which can accurately reflect the magnitude of the current rise rate. If the current rise rate is too large, it can be determined whether the current IGBT device fault is serious by comparing it with the empirical value (or directly using the comparison result of the IGBT flow capacity value and the preset capacity threshold). If the current rise rate exceeds a certain preset empirical value, it means that the current IGBT device has a serious fault and needs to be repaired immediately. If it does not exceed, it means that the fault is not serious and can be repaired according to the actual situation.

[0078] The present invention estimates defects such as internal bonding wire detachment and abnormal chip electrode contact of the device by observing the turn-on current rising rate of the IGBT device, thereby realizing timely and accurate determination of IGBT faults. This has reference significance for IGBT status monitoring and effectively ensures the safe and stable operation of the IGBT device.

[0079] like Figure 6 FIG. 1 is a schematic diagram showing the structure of an IGBT fault determination device based on a turn-on current rise rate according to an embodiment of the present invention. Figure 6 The device shown in the figure includes:

[0080] The control relationship module 10 is used to obtain the control relationship between the chip gate voltage and the chip collector current according to a preset IGBT half-bridge circuit model;

[0081] The current rise rate module 20 is used to obtain the turn-on current rise rate expression by using the control relationship between the chip gate voltage and the chip collector current;

[0082] The flow capacity module 30 is used to collect the actual current of the IGBT collector and obtain the IGBT flow capacity value according to the preset current threshold, the actual current of the IGBT collector and the expression of the turn-on current rising rate;

[0083] The fault status module 40 is used to determine the IGBT fault status according to the IGBT flow capacity value.

[0084] As an embodiment of the present invention, the control relationship module is also used to obtain the control relationship between the chip gate voltage and the chip collector current according to the preset IGBT half-bridge circuit model, the chip gate channel length, the chip gate channel width and the IGBT gate-emitter voltage.

[0085] As an embodiment of the present invention, Figure 7 As shown, the current rise rate module 20 includes:

[0086] The collector current unit 21 is used to determine the relationship between the IGBT collector current and the chip collector current by using the control relationship between the chip gate voltage and the chip collector current;

[0087] The current rising rate unit 22 is used to obtain the turn-on current rising rate expression according to the relationship between the IGBT collector current and the chip collector current.

[0088] As an embodiment of the present invention, Figure 8 As shown, the fault status module 40 includes:

[0089] A comparison result unit 41 is used to compare the IGBT flow capacity value with a preset capacity threshold value to obtain a comparison result;

[0090] The fault status unit 42 is used to determine the IGBT fault status according to the comparison result.

[0091] Based on the same application concept as the above-mentioned IGBT fault determination method based on the turn-on current rise rate, the present invention also provides the above-mentioned IGBT fault determination device based on the turn-on current rise rate. Since the principle of solving the problem by the IGBT fault determination device based on the turn-on current rise rate is similar to that of the IGBT fault determination method based on the turn-on current rise rate, the implementation of the IGBT fault determination device based on the turn-on current rise rate can refer to the implementation of the IGBT fault determination method based on the turn-on current rise rate, and the repeated parts will not be repeated.

[0092] The present invention estimates defects such as internal bonding wire detachment and abnormal chip electrode contact of the device by observing the turn-on current rising rate of the IGBT device, thereby realizing timely and accurate determination of IGBT faults. This has reference significance for IGBT status monitoring and effectively ensures the safe and stable operation of the IGBT device.

[0093] The present invention also provides an electronic device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the above method is implemented when the processor executes the program.

[0094] The present invention also provides a computer program product, comprising a computer program / instruction, which implements the steps of the above method when the computer program / instruction is executed by a processor.

[0095] The present invention also provides a computer-readable storage medium, which stores a computer program for executing the above method by a computer.

[0096] like Fig. 9 As shown, the electronic device 600 may further include: a communication module 110, an input unit 120, an audio processor 130, a display 160, and a power supply 170. It is worth noting that the electronic device 600 does not necessarily have to include Fig. 9 In addition, the electronic device 600 may also include Fig. 9 For components not shown, reference may be made to the prior art.

[0097] like Fig. 9 As shown, the central processor 100 is sometimes also referred to as a controller or an operation control, and may include a microprocessor or other processor devices and / or logic devices. The central processor 100 receives inputs and controls the operations of various components of the electronic device 600.

[0098] The memory 140 may be, for example, one or more of a cache, a flash memory, a hard drive, a removable medium, a volatile memory, a non-volatile memory or other suitable devices. The above-mentioned information related to the failure may be stored, and a program for executing the relevant information may also be stored. The CPU 100 may execute the program stored in the memory 140 to implement information storage or processing.

[0099] The input unit 120 provides input to the CPU 100. The input unit 120 is, for example, a key or a touch input device. The power supply 170 is used to provide power to the electronic device 600. The display 160 is used to display display objects such as images and text. The display may be, for example, an LCD display, but is not limited thereto.

[0100] The memory 140 may be a solid-state memory, such as a read-only memory (ROM), a random access memory (RAM), a SIM card, etc. It may also be a memory that saves information even when the power is off, can be selectively erased, and is provided with more data, examples of which are sometimes referred to as EPROMs, etc. The memory 140 may also be some other type of device. The memory 140 includes a buffer memory 141 (sometimes referred to as a buffer). The memory 140 may include an application / function storage unit 142, which is used to store application programs and function programs or processes for executing the operation of the electronic device 600 through the central processor 100.

[0101] The memory 140 may also include a data storage unit 143 for storing data, such as contacts, digital data, pictures, sounds, and / or any other data used by the electronic device. The driver storage unit 144 of the memory 140 may include various drivers for communication functions of the electronic device and / or for executing other functions of the electronic device (such as messaging applications, address book applications, etc.).

[0102] The communication module 110 is a transmitter / receiver that transmits and receives signals via the antenna 111. The communication module (transmitter / receiver) 110 is coupled to the central processor 100 to provide input signals and receive output signals, which may be the same as the case of a conventional mobile communication terminal.

[0103] Based on different communication technologies, multiple communication modules 110 may be provided in the same electronic device, such as a cellular network module, a Bluetooth module and / or a wireless LAN module. The communication module (transmitter / receiver) 110 is also coupled to a speaker 131 and a microphone 132 via an audio processor 130 to provide an audio output via the speaker 131 and receive an audio input from the microphone 132, thereby realizing a common telecommunication function. The audio processor 130 may include any suitable buffer, decoder, amplifier, etc. In addition, the audio processor 130 is also coupled to the central processor 100, so that the sound can be recorded on the local machine through the microphone 132, and the sound stored on the local machine can be played through the speaker 131.

[0104] Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Therefore, the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program code.

[0105] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1A device that provides the functions specified in a block or multiple blocks.

[0106] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0107] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0108] The present invention uses specific embodiments to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A method for determining IGBT fault based on turn-on current rising rate, characterized in that: The method comprises: According to the preset IGBT half-bridge circuit model, the control relationship between the chip gate voltage and the chip collector current is obtained; Using the control relationship between chip gate voltage and chip collector current, the expression of turn-on current rising rate is obtained; Collecting the actual current of the IGBT collector, and obtaining the IGBT flow capacity value according to the preset current threshold, the actual current of the IGBT collector and the expression of the turn-on current rise rate; An IGBT fault state is determined according to the IGBT flow capacity value.

2. The method according to claim 1, characterized in that: According to the preset IGBT half-bridge circuit model, the control relationship between the chip gate voltage and the chip collector current is obtained as follows: According to the preset IGBT half-bridge circuit model, chip gate channel length, chip gate channel width and IGBT gate-emitter voltage, the control relationship between the chip gate voltage and the chip collector current is obtained.

3. The method according to claim 1, characterized in that Using the control relationship between the chip gate voltage and the chip collector current, the expression for the turn-on current rise rate is obtained: Using the control relationship between the chip gate voltage and the chip collector current, determine the relationship between the IGBT collector current and the chip collector current; According to the relationship between the IGBT collector current and the chip collector current, the expression for the turn-on current rising rate is obtained.

4. The method according to claim 1, characterized in that: Determining the IGBT fault state according to the IGBT flow capacity value includes: Comparing the IGBT flow capacity value with a preset capacity threshold to obtain a comparison result; According to the comparison result, the IGBT fault state is determined.

5. A device for determining IGBT fault based on the turn-on current rising rate, characterized in that: The device comprises: A control relationship module is used to obtain the control relationship between the chip gate voltage and the chip collector current according to a preset IGBT half-bridge circuit model; The current rise rate module is used to obtain the turn-on current rise rate expression by using the control relationship between the chip gate voltage and the chip collector current; A flow capacity module is used to collect the actual current of the IGBT collector and obtain the IGBT flow capacity value according to a preset current threshold, the actual current of the IGBT collector and the expression of the turn-on current rise rate; The fault status module is used to determine the IGBT fault status according to the IGBT flow capacity value.

6. The device according to claim 5, characterized in that The control relationship module is also used to obtain the control relationship between the chip gate voltage and the chip collector current according to a preset IGBT half-bridge circuit model, a chip gate channel length, a chip gate channel width and an IGBT gate-emitter voltage.

7. The device according to claim 5, characterized in that The current rise rate module comprises: The collector current unit is used to determine the relationship between the IGBT collector current and the chip collector current by using the control relationship between the chip gate voltage and the chip collector current; The current rise rate unit is used to obtain the turn-on current rise rate expression according to the relationship between the IGBT collector current and the chip collector current.

8. The device according to claim 5, characterized in that The fault status module comprises: A comparison result unit, used for comparing the IGBT flow capacity value with a preset capacity threshold value to obtain a comparison result; The fault status unit is used to determine the IGBT fault status according to the comparison result.

9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: When the processor executes the computer program, the method according to any one of claims 1 to 4 is implemented.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program for causing a computer to execute the method according to any one of claims 1 to 4.

11. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instructions are executed by a processor, the steps of the method according to any one of claims 1 to 4 are implemented.

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