High-effect positive photoresist stripping liquid and preparation method thereof

Abstract

The invention discloses a high-effect positive photoresist stripping liquid, which is prepared from the following raw materials in percentage by mass: 15 to 25 weight percent of low-molecular primary amine compound, 40 to 50 weight percent of organic solvent, 5 to 10 weight percent of additive and the balance of water, the additive is obtained by compounding bifunctional amido modified polysiloxane, an organic sulfonate compound and benzimidazole acid ester, and the bifunctional amido modified polysiloxane is obtained by sequentially carrying out modification reaction on short-chain olefin primary amine, long-chain olefin hydrazide and oxo-imidazolidinyl acrylamide and poly (methoxy) vinyl siloxane. The high-performance positive photoresist stripping liquid has excellent stripping efficiency and selectivity, corrosion to a base material is reduced, meanwhile, environmental friendliness is kept, and the strict requirements for the high-performance stripping liquid in application scenes such as semiconductor manufacturing can be met. The invention also discloses a preparation method of the high-efficiency positive photoresist stripping liquid.

Description

Technical Field

[0001] The invention relates to the technical field of fine chemicals, and in particular to a high-performance positive photoresist stripping solution and a preparation method thereof. Background Art

[0002] In industrial scenarios such as semiconductor manufacturing, photolithography is one of the key steps for transferring fine circuit patterns on silicon wafers. Positive photoresist strippers play a vital role in this process. They are used to remove the photoresist layer that is no longer needed in the photolithography process. Traditional positive photoresist strippers usually contain a certain proportion of organic solvents and alkaline substances to ensure effective removal of the photoresist. However, these strippers have some limitations in practical applications, such as low stripping efficiency, corrosion to the substrate of semiconductor devices, pollution to the environment, and health risks to operators. In addition, traditional strippers may leave residues during the stripping process, affecting subsequent process steps. Therefore, the industry has been seeking to develop new high-efficiency positive photoresist strippers to improve stripping efficiency, reduce corrosion to the substrate, and reduce the impact on the environment and human health. This stripper needs to have excellent chemical stability, good wettability and permeability, and high-efficiency performance under a wide range of temperature and humidity conditions. Summary of the invention

[0003] In view of the above shortcomings of the prior art, the present invention provides a high-performance positive photoresist stripping solution to solve the technical problems of low efficiency, strong corrosion to the substrate, poor environmental adaptability, and difficulty in cleaning the residue after stripping when the traditional stripping solution is used to remove the photoresist. The present invention achieves high efficiency, low corrosion, environmental friendliness and easy cleaning of the stripping solution through innovative formula design, greatly improving the stripping efficiency and product quality in the semiconductor manufacturing process, while reducing the impact on the environment and the health of operators.

[0004] In order to achieve the above purpose, the technical solution adopted by the present invention is: A high-performance positive photoresist stripping solution is composed of the following raw materials in percentage by mass: 15-25wt% of a low-molecular primary amine compound, 40-50wt% of an organic solvent, 5-10wt% of an additive, and the balance is water; the additive is obtained by compounding a bifunctional amine-modified polysiloxane with an organic sulfonate compound and a benzimidazole ester, and the bifunctional amine-modified polysiloxane is obtained by sequentially modifying a short-chain olefin primary amine, a long-chain olefin hydrazide, an oxoimidazole alkyl acrylamide with poly(methoxy)vinylsiloxane.

[0005] As a preferred technical solution, the low molecular weight primary amine compound is at least one of 1,3-propylenediamine, (2R)-1,2-propylenediamine, 2,2-dimethyl-1,3-propylenediamine, and 1,2-propylenediamine.

[0006] As a preferred technical solution, the organic solvent is at least one of propylene carbonate, tetrahydrofuran, N-methylpyrrolidone, butanone, ethanol, and isopropanol.

[0007] As a preferred technical solution, the organic sulfonate compound is at least one of sodium dodecylbenzene sulfonate, sodium dioctyl sulfonate, dialkyl ammonium sulfonate, and sodium salt of sulfonated succinic acid monoester.

[0008] As a preferred technical solution, the benzimidazole ester is at least one of methyl benzimidazole-5-carboxylate, methyl 4-benzimidazolecarboxylate, methyl 1H-benzimidazole-5-ylcarbamate, ethyl benzimidazole-4-carboxylate, and ethyl 1H-benzimidazole-6-carboxylate.

[0009] As a preferred technical solution, the short-chain olefin primary amine is at least one of allylamine, vinylamine and 1-methylvinylamine.

[0010] As a preferred technical solution, the long-chain olefin hydrazide is at least one of 4-allylthiocarbamoyl hydrazide, 4-(allyloxy)-2-hydroxybenzoyl hydrazide and N-vinyl-succinamic acid hydrazide.

[0011] As a preferred technical solution, the oxoimidazolidinyl acrylamide is at least one of 2-methyl-N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide, N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide, and N-[[2-(2-oxoimidazolidin-1-yl)ethoxy]methyl]acrylamide.

[0012] As a preferred technical solution, the mass ratio of the bifunctional amine-modified polysiloxane to the organic sulfonate compound and the benzimidazole ester is 3-5:1-3:1-3.

[0013] Another aspect of the present invention is to provide a method for preparing the above-mentioned high-performance positive photoresist stripping solution, the preparation method comprising the following steps: S1: dissolving poly(methoxy)vinylsiloxane in a solvent, first adding an appropriate amount of short-chain olefin primary amine and initiator, heating to 70-90°C for addition reaction, and then sequentially adding long-chain olefin hydrazide and oxoimidazolyl acrylamide for further addition reaction to obtain a bifunctional amine-modified polysiloxane; S2: dissolving the bifunctional amine-modified polysiloxane obtained in step S1 in a mixed solvent consisting of a certain amount of an organic solvent and water, then adding an organic sulfonate compound and a benzimidazole ester, stirring and mixing evenly to obtain an additive; S3: dissolving the low molecular weight primary amine compound in a mixed solvent consisting of the remaining amount of organic solvent and water, and then adding the additive obtained in step S2, stirring and mixing evenly to obtain the high-performance positive photoresist stripping solution.

[0014] The high-efficiency positive photoresist stripping solution of the present invention uses a low-molecular primary amine compound as the main stripping component, can efficiently dissolve the positive photoresist, and significantly improve the stripping efficiency. At the same time, the introduction of the bifunctional amine-modified polysiloxane in the formula enhances the adhesion and wettability of the stripping solution to the photoresist, ensuring that the stripping solution can better cover and penetrate the photoresist layer. In addition, the compound use of the organic sulfonate compound and the benzimidazole ester improves the corrosion inhibition performance of the metal substrate and protects the substrate from corrosion. The chemical stability of this stripping solution is enhanced, so that it can maintain high efficiency under different environmental conditions, while improving selectivity and reducing adverse effects on the underlying material. The selection of environmentally friendly organic solvents and additives reduces the impact on the environment and may reduce the potential risk to the health of operators. The improvement of long-term durability and stability enables the stripping solution to maintain high-efficiency stripping performance after repeated use.

[0015] Furthermore, the bifunctional amine-modified polysiloxane of the present invention is obtained by the modification reaction of short-chain olefin primary amine, long-chain olefin hydrazide, oxo-imidazole alkyl acrylamide and poly (methoxy) vinyl siloxane; the chemical structure of the bifunctional amine-modified polysiloxane of the present invention, with siloxane as the main chain structure, effectively reduces the surface tension of the stripping solution, thereby improving the wettability and solubility of the stripping solution, and at the same time improves the thermal stability and chemical stability of the stripping solution. In addition, the synergistic effect of the short-chain olefin primary amine and the long-chain olefin hydrazide enhances the wettability and permeability of the stripping solution, improves the solubility and selectivity of the photoresist; and the introduction of oxo-imidazole alkyl acrylamide further improves the corrosion inhibition effect of the stripping solution, especially when in contact with a metal substrate, it can effectively protect the substrate from corrosion, ensuring the quality and integrity of the semiconductor device. These characteristics make the stripping solution of the present invention have significant application advantages in modern semiconductor manufacturing, and meet the strict requirements for high-performance positive photoresist stripping solutions.

[0016] Beneficial effects of the present invention: The high-performance positive photoresist stripping solution of the present invention not only realizes efficient stripping of positive photoresist, but also realizes low corrosion to semiconductor device substrates by innovatively introducing bifunctional amine-modified polysiloxane into the formula. This design not only enhances the chemical stability and thermal stability of the stripping solution, but also maintains environmental friendliness, helps to improve production efficiency and reduce health risks to operators.

[0017] In general, the high-performance positive photoresist stripping solution of the present invention not only has excellent stripping efficiency and selectivity, but also has good metal corrosion inhibition performance and long-term durability, which can meet the strict requirements for high-performance stripping solutions in semiconductor manufacturing. By precisely controlling the proportion of raw materials and reaction conditions, the stripping solution can reduce the impact on the environment while ensuring the stripping quality, increase the service life of the equipment, and reduce production costs, thus having broad application prospects in industrial scenarios such as semiconductors. DETAILED DESCRIPTION

[0018] The following description is used to disclose the present invention so that those skilled in the art can implement the present invention. The preferred embodiments described below are only examples, and those skilled in the art may think of other obvious variations.

[0019] Example 1. The high-performance positive photoresist stripping solution of this example is composed of the following raw materials in percentage by mass: 15wt% 1,3-propylenediamine, 40wt% propylene carbonate, 10wt% additives, and the balance is water; the additive is obtained by compounding a bifunctional amine-modified polysiloxane with sodium dodecylbenzenesulfonate and methyl benzimidazole-5-carboxylate in a mass ratio of 5:3:2, and the bifunctional amine-modified polysiloxane is obtained by modifying allylamine, 4-allylthiocarbamoyl hydrazide, 2-methyl-N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide with poly(methoxy)vinylsiloxane in sequence.

[0020] The method for preparing the high-performance positive photoresist stripping solution of this embodiment comprises the following steps: S1: 10 g of poly(methoxy)vinylsiloxane (molecular weight 2020) was dissolved in 150 mL of tetrahydrofuran solvent, 2.28 g of allylamine and 0.1 g of initiator AIBN were added first, the temperature was raised to 80°C for addition reaction, and then 4.83 g of 4-allylthiocarbamoyl hydrazide and 5.91 g of 2-methyl-N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide were added in sequence, the temperature was continued to be raised to 120°C for addition reaction for 2 hours, and bifunctional amino-modified polysiloxane was obtained after separation and purification; S2: dissolving 5 g of the bifunctional amino-modified polysiloxane obtained in step S1 in a mixed solvent consisting of 20 g of propylene carbonate and 20 g of water, then adding 3 g of sodium dodecylbenzenesulfonate and 2 g of methyl benzimidazole-5-carboxylate, stirring and mixing to obtain an additive; S3: dissolving 15 g of 1,3-propylenediamine in a mixed solvent consisting of the remaining amount of propylene carbonate and water, and then adding the additive obtained in step S2, stirring and mixing evenly to obtain the high-performance positive photoresist stripping solution.

[0021] The positive photoresist stripping solution obtained in this embodiment was subjected to stripping performance test and corrosion performance test. Among them, the photoresist stripping performance test was mainly carried out by spin coating the positive photoresist TDUR-P015PM on the silicon wafer, and forming a 20-micron thick photoresist layer after exposure and development; then, the substrate after the above treatment was immersed in the stripping solution, kept at 65°C for 30 minutes for stripping treatment, and then rinsed with pure water; the stripping effect was observed by SEM. In addition, the corrosion performance test was mainly carried out by immersing the AlSiCu metal sheet and the polycrystalline silicon sheet in the stripping solution respectively, treating them at 65°C for 30 minutes and then rinsing them with pure water, and using the SX1934D digital four-probe tester and the C640 film thickness meter to measure the corrosion rate of the AlSiCu metal sheet and the polycrystalline silicon sheet respectively. The test results show that the photoresist of this embodiment is completely stripped, and no residue can be seen in the liquid tank; the corrosion rates of the AlSiCu metal sheet and the polycrystalline silicon sheet are 0.46Å / min and 0.42Å / min, respectively.

[0022] Example 2. The high-performance positive photoresist stripping solution of this example is composed of the following raw materials in percentage by mass: 20wt% (2R)-1,2-propylenediamine, 45wt% propylene carbonate, 7wt% additives, and the balance is water; the additive is obtained by compounding a bifunctional amine-modified polysiloxane with sodium dioctyl sulfonate and methyl 4-benzimidazolecarboxylate in a mass ratio of 4:2:1, and the bifunctional amine-modified polysiloxane is obtained by modifying vinylamine, 4-(allyloxy)-2-hydroxybenzoic acid hydrazide, N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide with poly(methoxy)vinylsiloxane in sequence.

[0023] The method for preparing the high-performance positive photoresist stripping solution of this embodiment comprises the following steps: S1: 10 g of poly(methoxy)vinylsiloxane (molecular weight 2020) was dissolved in 150 mL of tetrahydrofuran solvent, 1.8 g of ethyleneamine and 0.1 g of initiator AIBN were added, the temperature was raised to 90°C for addition reaction, and then 5.85 g of 4-(allyloxy)-2-hydroxybenzoyl hydrazide and 5.49 g of N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide were added in sequence, the temperature was continued to be raised to 120°C for addition reaction for 2 hours, and bifunctional amino-modified polysiloxane was obtained after separation and purification; S2: dissolving 4 g of the bifunctional amine-modified polysiloxane obtained in step S1 in a mixed solvent consisting of 20 g of propylene carbonate and 10 g of water, then adding 2 g of sodium dioctyl sulfonate and 1 g of methyl 4-benzimidazole carboxylate, stirring and mixing to obtain an additive; S3: dissolving 20 g of (2R)-1,2-propylenediamine in a mixed solvent consisting of the remaining amount of propylene carbonate and water, and then adding the additive obtained in step S2, stirring and mixing evenly to obtain the high-performance positive photoresist stripping solution.

[0024] The test method of this embodiment is the same as that of embodiment 1. The test results show that the photoresist of this embodiment is completely stripped, and no residue is seen in the liquid tank; the etching rates of the AlSiCu metal sheet and the polysilicon sheet are 0.52Å / min and 0.48Å / min, respectively.

[0025] Example 3. The high-performance positive photoresist stripping solution of this example is composed of the following raw materials in percentage by mass: 25wt% 2,2-dimethyl-1,3-propylenediamine, 50wt% propylene carbonate, 5wt% additives, and the balance is water; the additive is obtained by compounding a bifunctional amine-modified polysiloxane with dialkyl ammonium sulfonate and methyl 1H-benzimidazol-5-ylcarbamate in a mass ratio of 3:1:1, and the bifunctional amine-modified polysiloxane is obtained by modifying 1-methylvinylamine, N-vinyl-succinamide acid hydrazide, N-[[2-(2-oxoimidazolidin-1-yl)ethoxy]methyl]acrylamide with poly(methoxy)vinylsiloxane in sequence.

[0026] The method for preparing the high-performance positive photoresist stripping solution of this embodiment comprises the following steps: S1: 10 g of poly(methoxy)vinylsiloxane (molecular weight 2020) was dissolved in 150 mL of tetrahydrofuran solvent, 2.28 g of 1-methylvinylamine and 0.1 g of initiator AIBN were first added, the temperature was raised to 80°C for addition reaction, and then 4.72 g of N-vinyl-succinamide acid hydrazide and 6.4 g of N-[[2-(2-oxoimidazolidin-1-yl)ethoxy]methyl]acrylamide were added in sequence, and the temperature was continued to rise to 120°C for addition reaction for 2 hours, and bifunctional amino-modified polysiloxane was obtained after separation and purification; S2: dissolving 3 g of the bifunctional amine-modified polysiloxane obtained in step S1 in a mixed solvent consisting of 20 g of propylene carbonate and 20 g of water, then adding 1 g of dialkyl ammonium sulfonate and 1 g of methyl 1H-benzimidazol-5-yl carbamate, stirring and mixing to obtain an additive; S3: dissolving 25 g of 2,2-dimethyl-1,3-propylenediamine in a mixed solvent consisting of the remaining amount of propylene carbonate and water, and then adding the additive obtained in step S2, stirring and mixing evenly to obtain the high-performance positive photoresist stripping solution.

[0027] The test method of this embodiment is the same as that of embodiment 1. The test results show that the photoresist of this embodiment is completely stripped, and no residue is seen in the liquid tank; the corrosion rates of the AlSiCu metal sheet and the polysilicon sheet are 0.57Å / min and 0.51Å / min, 0.46Å / min and 0.42Å / min, respectively.

[0028] Example 4. The high-performance positive photoresist stripping liquid of this example is composed of the following raw materials in percentage by mass: 15wt% 1,2-propylenediamine, 40wt% propylene carbonate, 10wt% additives, and the balance is water; the additive is obtained by compounding a bifunctional amine-modified polysiloxane with sodium salt of sulfonated succinic acid monoester and ethyl benzimidazole-4-carboxylate in a mass ratio of 5:3:2, and the bifunctional amine-modified polysiloxane is obtained by modifying allylamine, 4-allylthiocarbamoyl hydrazide, 2-methyl-N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide in sequence with poly(methoxy)vinylsiloxane.

[0029] The method for preparing the high-performance positive photoresist stripping solution of this embodiment comprises the following steps: S1: 10 g of poly(methoxy)vinylsiloxane (molecular weight 2020) was dissolved in 150 mL of tetrahydrofuran solvent, 2.28 g of allylamine and 0.1 g of initiator AIBN were added first, the temperature was raised to 70°C for addition reaction, and then 4.83 g of 4-allylthiocarbamoyl hydrazide and 5.91 g of 2-methyl-N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide were added in sequence, and the temperature was continued to rise to 120°C for addition reaction for 2 hours, and bifunctional amino-modified polysiloxane was obtained after separation and purification; S2: dissolving 5 g of the bifunctional amine-modified polysiloxane obtained in step S1 in a mixed solvent consisting of 20 g of propylene carbonate and 20 g of water, then adding 3 g of sulfonated succinic acid monoester sodium salt and 2 g of ethyl benzimidazole-4-carboxylate, stirring and mixing evenly to obtain an additive; S3: dissolving 15 g of 1,2-propylenediamine in a mixed solvent consisting of the remaining amount of propylene carbonate and water, and then adding the additive obtained in step S2, stirring and mixing evenly to obtain the high-performance positive photoresist stripping solution.

[0030] The test method of this embodiment is the same as that of embodiment 1. The test results show that the photoresist of this embodiment is completely stripped, and no residue is seen in the liquid tank; the etching rates of the AlSiCu metal sheet and the polysilicon sheet are 0.44Å / min and 0.40Å / min, respectively.

[0031] Example 5. The high-performance positive photoresist stripping solution of this example is composed of the following raw materials in percentage by mass: 15wt% 1,3-propylenediamine, 40wt% propylene carbonate, 10wt% additives, and the balance is water; the additive is obtained by compounding a bifunctional amine-modified polysiloxane with sodium dodecylbenzenesulfonate and 1H-benzimidazole-6-carboxylic acid ethyl ester in a mass ratio of 5:3:2, and the bifunctional amine-modified polysiloxane is obtained by modifying 1-methylvinylamine, N-vinyl-succinamide acid hydrazide, N-[[2-(2-oxoimidazolidin-1-yl)ethoxy]methyl]acrylamide with poly(methoxy)vinylsiloxane in sequence.

[0032] The method for preparing the high-performance positive photoresist stripping solution of this embodiment comprises the following steps: S1: 10 g of poly(methoxy)vinylsiloxane (molecular weight 2020) was dissolved in 150 mL of tetrahydrofuran solvent, 2.28 g of 1-methylvinylamine and 0.1 g of initiator AIBN were first added, the temperature was raised to 90°C for addition reaction, and then 4.72 g of N-vinyl-succinamide acid hydrazide and 6.4 g of N-[[2-(2-oxoimidazolidin-1-yl)ethoxy]methyl]acrylamide were added in sequence, and the temperature was continued to rise to 120°C for addition reaction for 2 hours, and bifunctional amino-modified polysiloxane was obtained after separation and purification; S2: dissolving 5 g of the bifunctional amine-modified polysiloxane obtained in step S1 in a mixed solvent consisting of 20 g of propylene carbonate and 20 g of water, then adding 3 g of sodium dodecylbenzenesulfonate and 2 g of 1H-benzimidazole-6-carboxylic acid ethyl ester, stirring and mixing to obtain an additive; S3: dissolving 15 g of 1,3-propylenediamine in a mixed solvent consisting of the remaining amount of propylene carbonate and water, and then adding the additive obtained in step S2, stirring and mixing evenly to obtain the high-performance positive photoresist stripping solution.

[0033] The test method of this embodiment is the same as that of embodiment 1. The test results show that the photoresist of this embodiment is completely stripped, and no residue is seen in the liquid tank; the etching rates of the AlSiCu metal sheet and the polysilicon sheet are 0.42Å / min and 0.41Å / min, respectively.

[0034] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments, and the above embodiments and descriptions only describe the principles of the present invention. The present invention may be subject to various changes and improvements without departing from the spirit and scope of the present invention, and these changes and improvements fall within the scope of the present invention claimed.

Claims

1. A high-performance positive photoresist stripping solution, characterized in that: The positive photoresist stripping solution is composed of the following raw materials in percentage by mass: 15-25wt% of a low molecular weight primary amine compound, 40-50wt% of an organic solvent, 5-10wt% of an additive, and the balance is water; the additive is obtained by compounding a bifunctional amine-modified polysiloxane with an organic sulfonate compound and a benzimidazole ester, and the bifunctional amine-modified polysiloxane is obtained by sequentially modifying a short-chain olefin primary amine, a long-chain olefin hydrazide, and an oxoimidazole alkyl acrylamide with poly(methoxy)vinyl siloxane.

2. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The low molecular weight primary amine compound is at least one of 1,3-propylenediamine, (2R)-1,2-propylenediamine, 2,2-dimethyl-1,3-propylenediamine and 1,2-propylenediamine.

3. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The organic solvent is at least one of propylene carbonate, tetrahydrofuran, N-methylpyrrolidone, butanone, ethanol and isopropanol.

4. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The organic sulfonate compound is at least one of sodium dodecylbenzene sulfonate, sodium dioctyl sulfonate, ammonium dialkyl sulfonate, and sodium salt of sulfonated succinic acid monoester.

5. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The benzimidazole acid ester is at least one of methyl benzimidazole-5-carboxylate, methyl 4-benzimidazolecarboxylate, methyl 1H-benzimidazole-5-ylcarbamate, ethyl benzimidazole-4-carboxylate, and ethyl 1H-benzimidazole-6-carboxylate.

6. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The short-chain olefin primary amine is at least one of allylamine, vinylamine and 1-methylvinylamine.

7. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The long-chain olefin hydrazide is at least one of 4-allylthiocarbamoyl hydrazide, 4-(allyloxy)-2-hydroxybenzoyl hydrazide and N-vinyl-succinamic acid hydrazide.

8. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The oxoimidazolidinyl acrylamide is at least one of 2-methyl-N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide, N-[2-(2-oxoimidazolidin-1-yl)ethyl]prop-2-enamide, and N-[[2-(2-oxoimidazolidin-1-yl)ethoxy]methyl]acrylamide.

9. The method for preparing a high-performance positive photoresist stripping solution as claimed in claim 1, characterized in that: The mass ratio of the bifunctional amine-modified polysiloxane to the organic sulfonate compound and the benzimidazole ester is 3-5:1-3:1-3.

10. A method for preparing a high-performance positive photoresist stripping solution as claimed in any one of claims 1 to 9, characterized in that: The preparation method comprises the following steps: S1: dissolving poly(methoxy)vinylsiloxane in a solvent, first adding an appropriate amount of short-chain olefin primary amine and initiator, heating to 70-90°C for addition reaction, and then sequentially adding long-chain olefin hydrazide and oxoimidazolyl acrylamide for further addition reaction to obtain a bifunctional amine-modified polysiloxane; S2: dissolving the bifunctional amine-modified polysiloxane obtained in step S1 in a mixed solvent consisting of a certain amount of an organic solvent and water, then adding an organic sulfonate compound and a benzimidazole ester, stirring and mixing evenly to obtain an additive; S3: dissolving the low molecular weight primary amine compound in a mixed solvent consisting of the remaining amount of organic solvent and water, and then adding the additive obtained in step S2, stirring and mixing evenly to obtain the high-performance positive photoresist stripping solution.