Temperature control device of semiconductor equipment

Abstract

The invention provides a temperature control device of semiconductor equipment, which comprises a heating circuit, and a heat-resisting layer and an isolating layer which are sequentially sleeved from inside to outside, the heat-resisting layer is used for sleeving the outer wall of a temperature control device of the semiconductor equipment, and the heating circuit comprises a plurality of sub-heating circuits which are sequentially connected in series; each sub-heating circuit comprises a heating element and a temperature response element which are connected in series, the temperature response element is used for responding to sensed temperature to enable the sub-heating circuits to be connected or disconnected, and the heating element and the temperature response element are separated by at least one of the heat-resistant layer and the isolating layer. The temperature control device of the semiconductor equipment can reduce or avoid the adverse effect of the heating element on the sensitivity of the temperature response element, thereby carrying out effective temperature monitoring and control on the temperature control device, and ensuring the safe and reliable operation of the semiconductor equipment.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor equipment, and more specifically, relates to a temperature control device for semiconductor equipment. Background Art

[0002] Temperature controlled devices of semiconductor equipment, such as gas pipelines used to transport reaction sources, need to keep the reaction sources at a certain temperature during the reaction source transportation process to meet process requirements, or because substances in the exhaust pipeline are easily deposited in the pipeline during the discharge process, the exhaust pipeline needs to have a certain temperature to gasify and discharge the substances, or the cavity needs to maintain a certain temperature due to process requirements. Therefore, it is necessary to monitor and control the temperature of these temperature controlled devices.

[0003] In the prior art, a heating element and a temperature control switch are connected in series in a heating sleeve, which is sleeved on a pipeline or a cavity. The heating of the pipeline or the cavity is achieved by controlling the heating element to generate heat, and the temperature control switch senses temperature abnormalities, such as overtemperature, and disconnects to stop the heating element from generating heat.

[0004] However, the temperature control switch is affected by the heat generated by the heating element, and its sensitivity is reduced, which affects the sensitivity of temperature sensing and makes it impossible to effectively monitor and control the temperature of the temperature-controlled device. Summary of the invention

[0005] An object of the present invention is to provide a temperature control device for a semiconductor device to reduce or avoid the adverse effect of a heating element on the sensitivity of a temperature protection element such as a temperature control switch.

[0006] To achieve the above object, the technical solution adopted by the present invention is: the present invention provides a temperature control device for semiconductor equipment, comprising: A heating circuit and a heat-resistant layer and an isolation layer sequentially sleeved from the inside to the outside, wherein the heat-resistant layer is used to be sleeved on a temperature-controlled device of the semiconductor device; The heating circuit comprises a plurality of sub-heating circuits connected in series; Each of the sub-heating circuits comprises a heating element and a temperature response element connected in series, wherein the temperature response element is used to respond to the sensed temperature to connect or disconnect the sub-heating circuit; The heating element is arranged on the heat-resistant layer, and the temperature response element is arranged on the isolation layer; The heating element and the temperature response element are separated by at least a portion of the heat-resistant layer and / or at least a portion of the isolation layer.

[0007] Further, the heating element and the temperature response element are arranged on the same side of the temperature-controlled device in the circumferential direction, and the heating element and the temperature response element are staggered; or, the heating element and the temperature response element are arranged on opposite sides of the temperature-controlled device in the circumferential direction.

[0008] Furthermore, the sub-heating circuit also includes a connecting wire electrically connected between the heating element and the temperature response element, and the connecting wire penetrates at least a portion of the heat-resistant layer and / or penetrates at least a portion of the isolation layer, and then electrically connects to the temperature response element.

[0009] Furthermore, the sub-heating circuits are arranged in sequence along a first direction, and the connecting wires are extended for a certain length along the first direction, and then extended for a certain length in the opposite direction of the first direction, and then electrically connected to the temperature response element.

[0010] Furthermore, the sub-heating unit also includes an incoming wire electrically connected to the heating element and a lead-out wire electrically connected to the temperature response element. After the lead-out wire passes through at least a portion of the isolation layer and / or at least a portion of the heat-resistant layer, it is electrically connected to the incoming wire of the heating element in the adjacent sub-heating unit.

[0011] Furthermore, the heating element includes a heating resistor, the temperature response element includes a temperature controlled switch, and the temperature controlled device includes a pipeline or a cavity.

[0012] Furthermore, it also includes a temperature measuring layer and a heat-insulating layer which are sequentially sleeved outside the isolation layer, the heat-insulating layer includes a glass fiber fabric with a porous structure, and the glass fiber fabric with a porous structure includes glass fiber needle-punched felt.

[0013] Furthermore, it also includes a dielectric insulation layer, the heat-resistant layer is sleeved outside the dielectric insulation layer, and the dielectric insulation layer is configured to allow the heat generated by the heating element to pass through and produce a heating effect on the temperature-controlled device of the semiconductor equipment.

[0014] Furthermore, the medium insulation layer includes a thermal insulation sleeve and a heat medium contained in the thermal insulation sleeve, and the heat medium includes water, heat transfer oil or liquid metal with a certain temperature.

[0015] Furthermore, the dielectric insulation layer includes a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a heat radiation control device sealed and electrically connected to the vacuum sleeve and the heat radiation element, so that the heat radiation element is driven by the heat radiation control device to form heat radiation, and the heat radiation element includes a nickel-chromium alloy element or a tungsten element.

[0016] Furthermore, a leak-proof layer is provided between the medium insulation layer and the heat-resistant layer, and the leak-proof layer is provided with a leak detection device.

[0017] Furthermore, it also includes: a heating control device electrically connected to the heating circuit.

[0018] The temperature control device of the semiconductor device provided by the present invention has the beneficial effect that: the temperature control device of the semiconductor device comprises a heating circuit and a heat-resistant layer and an isolation layer which are sequentially sleeved from the inside to the outside, the heat-resistant layer is used to be sleeved on the outer wall of the temperature-controlled device of the semiconductor device, the heating circuit comprises a plurality of sub-heating circuits which are sequentially connected in series, each of the sub-heating circuits comprises a heating element and a temperature response element which are mutually connected in series, the temperature response element is used to respond to the sensed temperature to connect or disconnect the sub-heating circuit, the heating element is arranged in the heat-resistant layer, the temperature response element is arranged in the isolation layer, and the heating element and the temperature response element are separated by at least a part of the heat-resistant layer and / or at least a part of the isolation layer. The temperature control device of the semiconductor device can reduce or avoid the adverse effect of the heating element on the sensitivity of the temperature response element, thereby effectively monitoring and controlling the temperature of the temperature-controlled device, and ensuring the safe and reliable operation of the semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0020] Figure 1 A schematic diagram of a planar unfolding structure of a temperature control device for semiconductor equipment provided by an embodiment of the present invention; the planar unfolding refers to a structure obtained by cutting the side wall along the axial direction and then unfolding it in sequence; Figure 2 A schematic structural diagram of a neutron heating circuit of a temperature control device for a semiconductor device provided by an embodiment of the present invention; Figure 3 A schematic diagram of a first relative position relationship between a heating element and a temperature response element and a heat-resistant layer and an isolation layer in a sub-heating circuit of a semiconductor device provided by an embodiment of the present invention; Figure 4 A schematic diagram of a second relative position relationship between a heating element and a temperature response element and a heat-resistant layer and an isolation layer in a sub-heating circuit of a semiconductor device provided by an embodiment of the present invention; Figure 5A schematic diagram of a third relative position relationship between a heating element and a temperature response element and a heat-resistant layer and an isolation layer in a sub-heating circuit of a semiconductor device provided by an embodiment of the present invention; Figure 6 A schematic diagram of a fourth relative position relationship between a heating element and a temperature response element and a heat-resistant layer and an isolation layer in a sub-heating circuit of a semiconductor device provided by an embodiment of the present invention; Figure 7 Another schematic diagram of the planar unfolding structure of the temperature control device for semiconductor equipment provided in an embodiment of the present invention; the planar unfolding refers to the unfolding of the structure obtained by cutting the side wall in the axial direction and then unfolding it, wherein the arrow represents the flow direction of the heat medium.

[0021] Among them, the reference numerals in the figure are: 1-heating circuit; 2-heat-resistant layer; 3-isolating layer; 4-temperature controlled device; 5-contact layer; 6-temperature measuring layer; 7-insulating layer; 8-protective layer; 9-medium insulating layer; 11-sub-heating circuit; 61-temperature measuring element; 91-leak-proof layer; 92-leak detection device; 111-heating element; 112-temperature response element; 113-connecting wire; 114-lead-in wire; 115-lead-out wire; 116-fusing device. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0024] It should be understood that the orientation or position relationship indicated by terms such as "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside" and "outside" are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0025] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0026] See also Figures 1 to 3 A temperature control device for a semiconductor device provided in an embodiment of the present invention comprises a heating circuit 1 and a heat-resistant layer 2 and an isolation layer 3 which are sequentially sleeved from the inside to the outside, wherein the heat-resistant layer 1 is used to be sleeved on a temperature-controlled device 4 of the semiconductor device; the heating circuit 1 comprises a plurality of sub-heating circuits 11 which are sequentially connected in series; each of the sub-heating circuits 11 comprises a heating element 111 and a temperature response element 112 which are mutually connected in series, wherein the temperature response element 112 is used to respond to the sensed temperature to connect or disconnect the sub-heating circuit 11; the heating element 111 and the temperature response element 112 are separated by at least one of the heat-resistant layer 2 and the isolation layer 2.

[0027] The heat-resistant layer 2 and the isolation layer 3 of this embodiment are sequentially sleeved on the outer wall of the temperature-controlled device 4. This embodiment does not impose any special restrictions on the specific sizes of the heat-resistant layer 2 and the isolation layer 3. For example, the temperature-controlled device 4 of the semiconductor device of this embodiment is a pipeline. The technician can select the size of the heat-resistant layer 2 according to the adaptability of the diameter of the pipeline, and select the size of the isolation layer 3 according to the adaptability of the size of the structure formed by the heat-resistant layer 2 and the pipeline. For example, in some specific embodiments, the heat-resistant layer 2 is in the shape of a hollow cylinder, sleeved on the outer wall of the temperature-controlled device 4, and at least part of the inner wall is in contact with at least part of the outer wall of the temperature-controlled device 4. The isolation layer 2 is in the shape of a hollow cylinder, sleeved on the outer wall of the heat-resistant layer 2 in the shape of a hollow cylinder, and at least part of the inner wall is in contact with at least part of the outer wall of the heat-resistant layer 2.

[0028] The heating circuit 1 of this embodiment includes a plurality of sub-heating circuits 11 connected in series, each of which includes a heating element 111 and a temperature response element 112 connected in series, and the temperature response element 112 is used to respond to the sensed temperature to connect or disconnect the sub-heating circuit 11. Exemplarily, a plurality of heating circuits 11 are arranged in series and spaced apart in the axial direction of the pipeline, wherein the heating element 111 of the sub-heating circuit 11 is used to heat the temperature-controlled device 4, and the temperature response element 112 responds to the sensed temperature to connect or disconnect the sub-heating circuit 11. This embodiment does not particularly limit the specific forms of the heating element 111 and the temperature response element 112. Exemplarily, the heating element 111 is a heating resistor, and the temperature response element 112 is a temperature control switch.

[0029] In this embodiment, the heat-resistant layer 2 and the isolation layer 3 are sequentially arranged from the inside to the outside, the heating element is arranged in the heat-resistant layer, and the temperature response element is arranged in the isolation layer. The heating element and the temperature response element are separated by at least a part of the heat-resistant layer and / or at least a part of the isolation layer. For example, please refer to Figure 3 In this embodiment, the heating element 111 is arranged on the side of the heat-resistant layer 2 close to the temperature-controlled device 4 of the semiconductor device, and the temperature-responsive element 112 is arranged on the side of the isolation layer 3 close to the heat-resistant layer 2. At this time, the temperature-responsive element 112 and the heating element 111 are separated by the heat-resistant layer 2; please refer to Figure 4 The heating element 111 is arranged on the side of the heat-resistant layer 2 away from the temperature-controlled device 4 of the semiconductor device, and the temperature-responsive element 112 is arranged on the side of the isolation layer 3 away from the heat-resistant layer 2. At this time, the temperature-responsive element 112 and the heating element 111 are separated by the isolation layer 3; please refer to Figure 5 , the heating element 111 is arranged on the side of the heat-resistant layer 2 close to the temperature-controlled device 4 of the semiconductor device, and the temperature-responsive element 112 is arranged on the side of the isolation layer 3 away from the heat-resistant layer 2. At this time, the temperature-responsive element 112 and the heating element 111 are separated by the heat-resistant layer 2 and the isolation layer 3. In some embodiments, the heating element is arranged inside the heat-resistant layer, and the temperature-responsive element is arranged inside the isolation layer. In this case, the heating element and the temperature-responsive element are separated by a part of the heat-resistant layer and a part of the isolation layer. In some embodiments, the heating element is arranged on the outer wall of the heat-resistant layer, that is, the surface of the heat-resistant layer facing the isolation layer, and the temperature-responsive element is arranged inside the isolation layer. In this case, the heating element and the temperature-responsive element are separated by a part of the isolation layer.

[0030] In this embodiment, a contact layer 5 is arranged inside the heat-resistant layer 2, and the material of the contact layer 5 can be aluminum foil composite glass cloth. By arranging the contact layer 5 inside the heat-resistant layer 2 to directly contact the outer wall of the pipeline, heat transfer can be promoted and heat transfer resistance can be reduced. The aluminum foil composite glass fiber cloth has better tensile strength and surface stiffness, which is convenient for close fitting with the heating pipeline, and the aluminum foil material can reflect part of the heat emitted by the pipeline.

[0031] The vapor deposition reaction in MOCVD semiconductor equipment requires that the reaction source gas entering is in gaseous state. Some substances used as reaction source gas, such as trimethyl gallium which is liquid at normal pressure, need to be vaporized at a certain temperature and pressure before entering the air intake pipeline or carried out by carrier gas into the air intake pipeline. It is also necessary to maintain a certain temperature and pressure in the air intake pipeline to ensure that the reaction source gas is in gaseous state during the transportation process. The air intake pipeline for transporting the reaction source gas serves as a temperature-controlled device for semiconductor equipment.

[0032] In this embodiment, the heating element 111 and the temperature response element 112 are separated by at least a portion of the heat-resistant layer 2 and / or at least a portion of the isolation layer 3, which can reduce the impact of the heat generated by the heating circuit 111 on the temperature response element 112, ensure the sensitivity of the temperature response element 112, and enable the temperature response element 112 to correctly respond to the sensed temperature to connect or disconnect the sub-heating circuit 11.

[0033] The temperature controlled device 4 of this embodiment is not limited to a pipeline, but may also be a cavity whose internal temperature needs to be controlled, such as a process cavity.

[0034] See also Figure 3-6 As shown, the heating element 111 and the temperature response element 112 are arranged on the same side of the temperature controlled device 4 in the circumferential direction, and the heating element 111 and the temperature response element 112 are arranged in a staggered manner. The heating element 111 and the temperature response element 112 are arranged on the same side of the temperature controlled device 4 in the circumferential direction, which means that the connecting line of the heating element 111 and the temperature response element 112 does not pass through the center of the circle in the circumferential direction.

[0035] See also Figure 6 Optionally, the heating element 111 and the temperature response element 112 are arranged on opposite sides of the temperature controlled device 4 in the circumferential direction. Specifically, the connecting line of the heating element 111 and the temperature response element 112 passes through the center of the circle in the circumferential direction, and this arrangement increases the spacing between the heating element 111 and the temperature response element 112 in the circumferential direction.

[0036] In this embodiment, a plurality of sub-heating circuits 11 connected in series are evenly spaced along the axial direction of the temperature controlled device 4, wherein the heating elements 111 are evenly spaced along the axial direction of the temperature controlled device 4, and the temperature response elements 112 are evenly spaced along the axial direction of the temperature controlled device 4. In this embodiment, the plurality of heating elements 111 are evenly spaced along the axial direction of the temperature controlled device 4, so that the temperature controlled device 4 can be better subjected to refined heating control.

[0037] The temperature response elements 112 of this embodiment are evenly spaced along the axial direction of the temperature controlled device 4. By setting up multiple temperature response elements 112, the temperature conditions in different areas are sensed. The temperature response elements 112 respond to the sensed temperature to connect or disconnect themselves and thus connect or disconnect the sub-heating circuit 11 in which they are located, thereby reducing or avoiding the impact of local high temperature on the temperature controlled device 4.

[0038] See also Figure 2 As shown, the sub-heating unit 11 of this embodiment also includes a connecting wire 113 electrically connected between the heating element 111 and the temperature response element 112, and the connecting wire 113 penetrates at least a portion of the heat-resistant layer 2, and / or penetrates at least a portion of the isolation layer 3, and then electrically connects to the temperature response element 112. Exemplarily, the heating element 111 is arranged on the side of the heat-resistant layer 2 close to the temperature-controlled device 4 of the semiconductor device, the temperature response element 112 is arranged on the side of the isolation layer 3 close to the heat-resistant layer 2, and the temperature response element 112 and the heating element 111 are connected in series through the connecting wire 113 penetrating the heat-resistant layer 2. Alternatively, the heating element 111 is arranged on the side of the heat-resistant layer 2 close to the temperature-controlled device 4 of the semiconductor device, the temperature response element 112 is arranged on the side of the isolation layer 3 away from the heat-resistant layer 2, and the temperature response element 112 and the heating element 111 are connected in series through the connecting wire 113 penetrating the heat-resistant layer 2 and the isolation layer 3.

[0039] Furthermore, the heat-resistant layer 2 and the isolation layer 3 form a hollow cylinder, and the connecting wire 113 extends a certain length toward one end of the hollow cylinder, then extends a certain length toward the other end of the hollow cylinder, and then electrically connects to the temperature response element 112. After the connecting wire 113 of this embodiment is connected to the heating element 111, it extends a certain length toward one end of the hollow cylinder and then extends a certain length toward the other end of the hollow cylinder before being electrically connected to the temperature response element 112, so that a connection is formed between the heating element 111 and the temperature response element 112. Figure 2The reciprocating fold line structure shown facilitates flexible adjustment of the spacing between the heating element 111 and the temperature response element 112. In addition, it also makes the layout of each sub-heating circuit 11 compact, and can adjust the proximity between adjacent heating elements 111 as much as possible, and set more heating elements 111 to finely control the temperature of the temperature-controlled device.

[0040] In some embodiments, the heating element 111 and the temperature response element 112 of the same sub-heating unit 11 are staggered along the radial direction of the hollow cylinder. The arrangement of the connecting wire 113 in this embodiment allows the heating element 111 and the temperature response element 112 to be located on opposite sides of the circumferential direction of the temperature-controlled device 4, respectively. The distance between the heating element 111 and the temperature response element 112 in the circumferential direction is the largest, further reducing the influence of the heating of the heating element 111 on the temperature response element 112. In this embodiment, the connecting wire 113 connecting the heating element 111 extends a certain length toward one end of the hollow cylinder, extends a certain arc around the hollow cylinder, then extends a certain length toward the other end of the hollow cylinder, and then extends a certain arc around the hollow cylinder to electrically connect to the temperature response element 112. There is a certain length of connecting wire between the heating element 111 and the temperature response element 112, which is convenient for adjusting the distance between the heating element 111 and the temperature response element 112. In this embodiment, the heating element 111 and the temperature response element 112 of each sub-heating circuit 11 are respectively located on opposite sides of the circumferential direction of the temperature controlled device 4, that is, the heating element 111 and the temperature response element 112 of each sub-heating circuit are correspondingly arranged in the circumferential direction. The overall structure of the heating circuit 1 is compact, and it can better reduce the influence of the heat generated by the heating element 111 on the temperature response element 112, thereby improving the temperature sensing sensitivity of the temperature response element 112.

[0041] For further information, see Figure 2 As shown, the sub-heating unit 11 further includes an introduction wire 114 electrically connected to the heating element 111 and an extraction wire 115 electrically connected to the temperature response element 112, and the extraction wire 115 penetrates at least a portion of the isolation layer 3 and / or at least a portion of the heat-resistant layer 2, and is electrically connected to the introduction wire 114 of the heating element 111 in the adjacent sub-heating circuit 11. In this embodiment, the adjacent sub-heating circuits 11 are connected in series by connecting the introduction wire 114 of the heating element 111 and the extraction wire 115 electrically connected to the temperature response element 112, wherein the distance between the adjacent sub-heating circuits 11 can be adjusted by adjusting the length of the introduction wire 114 and the extraction wire 115.

[0042] Preferably, the heating element 111 includes a heating resistor, and the temperature response element 112 includes a temperature-controlled switch. This embodiment does not specifically limit the power and resistance value of the heating resistor, and the technicians can preset them in advance according to actual conditions. This embodiment does not specifically limit the specific form of the temperature-controlled switch. The temperature-controlled switch of this embodiment is a self-resetting temperature-controlled switch.

[0043] In one specific embodiment, see Figure 1 As shown, the temperature control device of the semiconductor equipment also includes a temperature measuring layer 6 and a heat-insulating layer 7 which are sequentially sleeved outside the isolation layer 3, and the heat-insulating layer includes a glass fiber fabric with a porous structure, and the glass fiber fabric with a porous structure includes glass fiber needle-punched felt.

[0044] The temperature measuring layer 6 of this embodiment is used to measure the temperature of the heating element 111. The temperature of the temperature-controlled device 4 of the semiconductor device can be obtained through the temperature of the heating element 111. The temperature measuring layer 6 of this embodiment is provided with a temperature measuring element 61. The temperature obtained by the temperature measuring element 61 of this embodiment can realize real-time monitoring of the operating temperature of the temperature-controlled device 4 of the semiconductor device, timely discover temperature abnormalities, eliminate safety operation hazards caused by overheating, and avoid economic losses caused thereby. The temperature measuring element 61 of this embodiment can be a thermocouple, which has high measurement accuracy, a wide temperature measurement range, simple operation and high stability.

[0045] In this embodiment, the thermal insulation layer 7 is used to keep the temperature controlled device 4 warm. The thermal insulation layer 7 in this embodiment is usually composed of a material with a relatively low thermal conductivity. The material with a relatively low thermal conductivity has good thermal insulation performance and can effectively prevent heat transfer. In this embodiment, by providing the thermal insulation layer 7, the heat loss of the gas phase medium in the pipeline during the transportation process can be reduced, thereby saving energy and improving the economy of the system operation. In addition, a protective layer 8 is usually provided on the outer layer of the thermal insulation layer 7 to protect the thermal insulation layer 7 from external mechanical damage and moisture erosion.

[0046] The thermal insulation layer 7 of this embodiment is a glass fiber fabric with a porous structure, and the glass fiber fabric with a porous structure includes glass fiber needle felt. Glass fiber needle felt has a low heat transfer coefficient and has very good thermal insulation and heat resistance. Glass fiber needle felt has thousands of tiny air pockets and irregular fiber layout, which can reduce energy outflow.

[0047] Figure 7 Another schematic diagram of the planar expansion structure of the temperature control device for semiconductor equipment provided by the embodiment of the present invention; the planar expansion refers to the expansion of the structure obtained by cutting the side wall in the axial direction and then spreading it, wherein the arrow represents the flow direction of the heat medium. Figure 1 and Figure 7As shown, in a specific embodiment, the temperature control device of the semiconductor device further includes a dielectric insulation layer 9, the heat-resistant layer 2 is sleeved outside the dielectric insulation layer 9, and the dielectric insulation layer 9 is configured to allow the heat generated by the heating element 111 to pass through and produce a heating effect on the temperature-controlled device 4 of the semiconductor device. The dielectric insulation layer 9 of this embodiment is arranged on the outside of the contact layer 5 of the outer wall of the temperature-controlled device 4 of the semiconductor device. The dielectric insulation layer 9 can still play a role in heat preservation for the temperature-controlled device 4 when an emergency occurs in the heating circuit 1, such as when the heating is stopped, so as to avoid the temperature-controlled device 4 from being adversely affected by excessive temperature loss.

[0048] The medium insulation layer 9 includes an insulation sleeve and a heat medium contained in the insulation sleeve, and the heat medium includes water, heat transfer oil or liquid metal with a certain temperature. Water has a large specific heat capacity, and can effectively absorb heat when the heating circuit 1 is heated, and can effectively release heat when the heating circuit 1 stops heating, so as to maintain the temperature stability in the temperature-controlled device 4. Thermal oil has better thermal stability than water, less coking, and longer service life. In addition, the vapor pressure of thermal oil is not high, the evaporation loss is small, and it will not catch fire and burn within the allowable temperature range and in a sealed state, so it is safer. Thermal oil also has the characteristics of low toxicity and tastelessness, and the pollution to the environment is very small, and it will not corrode equipment like medium water. Liquid metal has excellent thermal conductivity and specific heat capacity.

[0049] Since the dielectric insulation layer 9 contains flowing medium, in some embodiments, a leak-proof layer 91 is provided between the dielectric insulation layer 9 and the heat-resistant layer 2, and the leak-proof layer 91 is provided with a leak detection device 92 to facilitate timely monitoring of leakage of the dielectric insulation layer 9 and further prevent the normal operation of the heating circuit 1 from being affected by leakage.

[0050] In a specific embodiment, the dielectric insulation layer 9 includes a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a heat radiation control device sealed and electrically connected to the vacuum sleeve and the heat radiation element, so as to drive the heat radiation element to form heat radiation through the heat radiation control device, thereby realizing the insulation of the temperature controlled device 4. Optionally, the heat radiation element includes a nickel-chromium alloy element or a tungsten element. The nickel-chromium alloy element can be a nickel-chromium alloy wire, and the tungsten element can be a tungsten wire. The heating working principle of the nickel-chromium alloy or tungsten wire is that resistance heat is generated when current passes through the resistance material. The nickel-chromium alloy has a high resistivity. When the current passes, more heat is generated, thereby achieving a heating effect. The resistance temperature coefficient of the tungsten wire is large, and the resistivity increases significantly with the increase of temperature. The heat radiation element is arranged in the vacuum sleeve of the dielectric insulation layer 9, which can provide stable and efficient heat energy conversion and heat dissipation effects. The nickel-chromium alloy element or tungsten element of this embodiment is located in the vacuum sleeve, so that the insulation effect is more durable.

[0051] In a specific embodiment, the temperature control device of the semiconductor equipment also includes a heating control device, which is electrically connected to the heating circuit 1. The heating control device controls the power of the heating circuit 1. The current passes through each heating element, and each heating element, such as a heating resistor, heats up to generate heat.

[0052] In some embodiments, the heating control device is electrically connected to the heating circuit 1 and can also obtain the on-off information of each temperature response element, and judge whether to stop the power control of the heating circuit according to the on-off information. Exemplarily, after the temperature response element 112 is disconnected, the disconnection information is fed back to the heating control device, and the heating control device stops the power control of the heating circuit according to the disconnection information so that the heating element 111 stops heating. The heating control device of this embodiment controls the heating element 111 to heat or stop heating according to the on-off information of the temperature response element 112, which can avoid energy waste to a certain extent.

[0053] In some embodiments, reference Figure 1 The input wire of the heating circuit 1 is provided with a fuse device 116, which can be fused in the case of internal short circuit overload to protect the heating elements and temperature response elements in the heating circuit. The fuse device 116 can be a fuse.

[0054] In some embodiments, the heating control device is a host computer, a PLC and a PSU (Power Supply Unit) electrically connected in sequence. The PLC converts and sends control instructions from the host computer, and the PSU performs power control and outputs current in response to the converted control instructions.

[0055] In the above description, the description with reference to the terms "an embodiment", "some embodiments", "example", "specific example" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0056] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions described in the above embodiments may still be modified, or some or all of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A temperature control device for semiconductor equipment, characterized in that: include: A heating circuit and a heat-resistant layer and an isolation layer sequentially sleeved from the inside to the outside, wherein the heat-resistant layer is used to be sleeved on a temperature-controlled device of the semiconductor device; The heating circuit comprises a plurality of sub-heating circuits connected in series; Each of the sub-heating circuits comprises a heating element and a temperature response element connected in series, wherein the temperature response element is used to respond to the sensed temperature to connect or disconnect the sub-heating circuit; The heating element is arranged on the heat-resistant layer, and the temperature response element is arranged on the isolation layer; The heating element and the temperature response element are separated by at least a portion of the heat-resistant layer and / or at least a portion of the isolation layer.

2. The temperature control device for semiconductor equipment according to claim 1, characterized in that: The heating element and the temperature response element are arranged on the same side of the temperature-controlled device in the circumferential direction, and the heating element and the temperature response element are staggered; or, the heating element and the temperature response element are respectively arranged on opposite sides of the temperature-controlled device in the circumferential direction.

3. The temperature control device for semiconductor equipment according to claim 1, characterized in that: The sub-heating circuit also includes a connecting wire electrically connected between the heating element and the temperature response element, and the connecting wire passes through at least a portion of the heat-resistant layer and / or passes through at least a portion of the isolation layer, and then electrically connects to the temperature response element.

4. The temperature control device for semiconductor equipment according to claim 3, characterized in that: The sub-heating circuits are arranged in sequence along a first direction. After the connecting wires extend a certain length along the first direction, they extend a certain length in the opposite direction of the first direction and are then electrically connected to the temperature response element.

5. The temperature control device for semiconductor equipment according to claim 3, characterized in that: The sub-heating unit also includes an inlet wire electrically connected to the heating element and an outlet wire electrically connected to the temperature response element. After the outlet wire passes through at least a portion of the isolation layer and / or at least a portion of the heat-resistant layer, it is electrically connected to the inlet wire of the heating element in the adjacent sub-heating unit.

6. The temperature control device for semiconductor equipment according to claim 1, characterized in that: The heating element includes a heating resistor, the temperature response element includes a temperature control switch, and the temperature controlled device includes a pipeline or a cavity.

7. The temperature control device for semiconductor equipment according to claim 1, characterized in that: It also includes a temperature measuring layer and a heat-insulating layer which are sequentially sleeved outside the isolation layer. The heat-insulating layer includes a glass fiber fabric with a pore structure, and the glass fiber fabric with a pore structure includes glass fiber needle-punched felt.

8. The temperature control device for semiconductor equipment according to claim 1, characterized in that: It also includes a dielectric insulation layer, the heat-resistant layer is sleeved outside the dielectric insulation layer, and the dielectric insulation layer is configured to allow the heat generated by the heating element to pass through and produce a heating effect on the temperature-controlled device of the semiconductor equipment.

9. The temperature control device for semiconductor equipment according to claim 8, characterized in that: The medium insulation layer includes an insulation sleeve and a heat medium contained in the insulation sleeve, and the heat medium includes water, heat transfer oil or liquid metal with a certain temperature.

10. The temperature control device for semiconductor equipment according to claim 8, characterized in that: The dielectric insulation layer includes a vacuum sleeve, a heat radiation element arranged in the vacuum sleeve, and a heat radiation control device sealed and electrically connected to the vacuum sleeve and the heat radiation element, so that the heat radiation element is driven by the heat radiation control device to form heat radiation, and the heat radiation element includes a nickel-chromium alloy element or a tungsten element.

11. The temperature control device for semiconductor equipment according to claim 8, characterized in that: A leak-proof layer is arranged between the medium heat-insulating layer and the heat-resistant layer, and the leak-proof layer is provided with a leak detection device.

12. The temperature control device for semiconductor equipment according to claim 1, characterized in that: It also includes a heating control device electrically connected to the heating circuit.

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