Layered test method of three-dimensional stacked memory

Abstract

The invention discloses a hierarchical test method of a three-dimensional stacked memory, which relates to the technical field of memory testing, and comprises the following steps of: performing initialization operation on each storage layer of the three-dimensional stacked memory, and formulating a hierarchical test mode of the current three-dimensional stacked memory according to the structure type of the storage layer; testing each storage layer of the three-dimensional stacked memory, marking a certain storage layer as a to-be-checked storage layer if the storage abnormity of the certain storage layer is detected, recording the storage position and the storage type of the storage layer, carrying out a global test on the to-be-checked storage layer, and ending the test if the storage abnormity is not detected in all the storage layers; and according to a test result of the global test, all abnormal storage boundaries of corresponding storage layers of the three-dimensional stacked memory are positioned, diagnosis and repair are carried out, and then the abnormal storage boundaries are converted into normal storage boundaries.

Description

Technical Field

[0001] The present invention relates to the technical field of memory testing, and in particular to a layered testing method for a three-dimensional stacked memory. Background Art

[0002] Existing 3D stacked memory technology has been widely used in many fields due to its high density and efficient storage capacity. However, due to the complexity of the 3D stacked memory structure, effective testing and fault diagnosis has become a technical challenge. In existing technologies, memory testing is usually based on the entire memory, rather than on each independent storage layer. When this method detects storage anomalies, it is often difficult to accurately locate the specific storage layer or storage unit, resulting in complex and inefficient maintenance and optimization processes. Summary of the invention

[0003] In order to solve the above problems, an object of the present invention is to provide a hierarchical testing method for a three-dimensional stacked memory.

[0004] The object of the present invention can be achieved by the following technical solution: A layered testing method for a three-dimensional stacked memory comprises the following steps: Step S1: performing an initialization operation on each storage layer of the three-dimensional stacked memory, formulating a layered test mode of the current three-dimensional stacked memory according to the structure type of the storage layer, and testing each storage layer of the three-dimensional stacked memory according to the layered test mode; Step S2: if a storage anomaly is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected in detail, the storage location and storage type of the storage layer to be inspected in detail are recorded, and a full-domain test of the storage layer to be inspected is performed; if no storage anomaly is detected in all storage layers of the three-dimensional stacked memory, the test is terminated; Step S3: According to the test result of the global test, all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory are located, and the abnormal storage boundaries are diagnosed and repaired, and then the abnormal storage boundaries are converted into normal storage boundaries.

[0005] Furthermore, the process of performing an initialization operation on each storage layer of the three-dimensional stacked memory includes: The three-dimensional stacked memory is composed of a first storage layer, a second storage layer and a third storage layer, and each storage layer is initialized in turn, wherein the initialization operation includes configuring test parameters corresponding to each storage layer, setting a threshold voltage corresponding to each storage layer, performing a hardware reset on each storage layer, and performing an appearance inspection on each storage layer; The test parameters configured for the storage layer include test duration, data read operation code, data write operation code, data erase operation code, bad block record code, and error correction code; When the hardware reset of each storage layer where the three-dimensional stacked memory is located is successfully completed, and no defects that affect the storage structure are found in each storage layer after appearance inspection, the initialization operation of the current three-dimensional stacked memory is successfully completed, otherwise, the initialization operation fails.

[0006] Furthermore, according to the structural type of the storage layer, a layered test mode of the current three-dimensional stacked memory is formulated, and a process of testing each storage layer of the three-dimensional stacked memory according to the layered test mode includes: Analyze the component structure distribution of the first storage layer, the second storage layer, and the third storage layer in the three-dimensional stacked memory in turn, and then determine whether there are storage layers of the same structural type, and select a corresponding layered test mode for the storage layer of the current three-dimensional stacked memory according to the determination result; Hierarchical test modes include parallel test mode and independent test mode; If there are storage layers of the same structural type in the three-dimensional stacked memory, the storage layers of the same structural type are marked as storage layers of the same category; if there are no storage layers of the same structural type in the three-dimensional stacked memory, all storage layers of the current three-dimensional stacked memory are marked as storage layers of different categories; The hierarchical test mode selected for storage layers of the same category is the parallel test mode; The tiered test mode selected for the heterogeneous storage tiers is the independent test mode; After each storage layer of the three-dimensional stacked memory has completed its corresponding layered test mode, each storage layer of the three-dimensional stacked memory is tested according to the layered test mode of each storage layer and the test parameters corresponding to the initialization operation.

[0007] Furthermore, the parallel test mode synchronously performs tests on multiple storage layers in the three-dimensional stacked memory, and the test results of the storage layer in the upper layer are used to guide the test of the storage layer in the lower layer. The independent test mode tests each storage layer in the three-dimensional stacked memory in turn. When the test of the first storage layer is completed, the test of the second storage layer is started. After the test of the second storage layer is completed, the test of the third storage layer is started.

[0008] Furthermore, if a storage abnormality is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected, the storage position and storage type of the storage layer to be inspected are recorded, and a full-domain test of the storage layer to be inspected is performed. The process includes: According to a parallel test mode or an independent test mode, each storage layer where the three-dimensional stacked memory is located is tested, and the types of tests include data reading, data writing and data erasing. When the first storage block in a storage layer that cannot normally read data, write data or erase data is detected, a repair operation is performed on the corresponding storage block according to an error correction code; If the repair is successful, the next storage block in the current storage layer will continue to be tested until the storage blocks of all storage layers are tested; if the repair fails, the current storage block will be marked as a bad block through the bad block record code. When all storage layers in the three-dimensional stacked memory have been tested and no bad blocks are found, the test will end; If a bad block appears in a certain storage layer of the three-dimensional stacked memory, the detection result is that a storage abnormality occurs in the current storage layer. The corresponding storage layer is marked as a storage layer to be inspected in detail, and the storage position of the storage layer to be inspected in detail in the three-dimensional stacked memory and the storage type of the data stored in the storage layer to be inspected are recorded; a full-domain test is performed on all storage layers to be inspected in detail.

[0009] Furthermore, the global testing process includes: For each storage block included in the storage layer to be inspected, all bad blocks are located, and each bad block in the storage layer to be inspected is tested for functionality, performance, and error injection in turn; and then the specific abnormal storage type in each bad block is obtained, and the abnormal storage type includes functional abnormality, performance abnormality, and correction processing abnormality; Record the location coordinates of each bad block in the storage layer to be inspected, and record the abnormal storage type of each bad block. When all the bad blocks in a storage layer to be inspected have been tested, end the global test of the current storage layer to be inspected. When all the bad blocks included in all storage layers to be inspected in the three-dimensional stacked memory have been tested, end the final global test of the three-dimensional stacked memory.

[0010] Further, according to the test results of the global test, the process of locating all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory includes: The test results of the full-domain test of the three-dimensional stacked memory are obtained. The test results are the position coordinates of the bad blocks in each storage layer, and the abnormal storage type corresponding to each bad block. The areas corresponding to the bad blocks with adjacent position coordinates in each storage layer of the three-dimensional stacked memory are integrated as abnormal storage boundaries. If there are no bad blocks with adjacent position coordinates in the storage layer, the area of ​​the corresponding bad block is used separately as the abnormal storage boundary, thereby locating all the abnormal storage boundaries in each storage layer of the three-dimensional stacked memory.

[0011] Furthermore, the process of diagnosing and repairing the abnormal storage boundary and converting the abnormal storage boundary into a normal storage boundary includes: In each storage layer of the three-dimensional stacked memory, the boundary area of ​​each located abnormal storage boundary is obtained, and the processing priority of each abnormal storage boundary corresponding to the boundary area is set in descending order according to the boundary area from large to small; Arrange relevant professionals to inspect and repair the three-dimensional stacked memory, and diagnose and repair each abnormal storage boundary in the three-dimensional stacked memory in turn according to the order of processing priority set for the abnormal storage boundary, and then convert all abnormal storage boundaries in the three-dimensional stacked memory into corresponding normal storage boundaries.

[0012] Compared with the prior art, the present invention has the following beneficial effects: by initializing and layering each storage layer, the storage layer with preliminary storage anomalies can be accurately marked and located, which improves the accuracy of fault diagnosis to a certain extent; by adopting the layered test mode, full-domain testing can be quickly performed when storage anomalies are detected, avoiding unnecessary comprehensive testing in traditional methods, saving testing time and resources. By recording the storage location and type of the storage layer to be inspected, maintenance personnel can quickly identify and handle abnormal storage domains, improving maintenance efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a flow chart of the present invention. DETAILED DESCRIPTION

[0014] like Figure 1 As shown, the layered testing method of the three-dimensional stacked memory includes the following steps: Step S1: performing an initialization operation on each storage layer of the three-dimensional stacked memory, formulating a layered test mode of the current three-dimensional stacked memory according to the structure type of the storage layer, and testing each storage layer of the three-dimensional stacked memory according to the layered test mode; Step S2: if a storage anomaly is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected in detail, the storage location and storage type of the storage layer to be inspected in detail are recorded, and a full-domain test of the storage layer to be inspected is performed; if no storage anomaly is detected in all storage layers of the three-dimensional stacked memory, the test is terminated; Step S3: According to the test result of the global test, all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory are located, and the abnormal storage boundaries are diagnosed and repaired, and then the abnormal storage boundaries are converted into normal storage boundaries.

[0015] It should be further explained that, in a specific implementation process, the process of initializing each storage layer of the three-dimensional stacked memory includes: The three-dimensional stacked memory is composed of a first storage layer, a second storage layer and a third storage layer, wherein the first storage layer is connected to the second storage layer, the second storage layer is connected to the third storage layer, and each storage layer is initialized in sequence starting from the first storage layer and ending at the third storage layer; The initialization operation includes configuring the test parameters corresponding to each storage layer, setting the threshold voltage corresponding to each storage layer, performing a hardware reset on each storage layer, and performing an appearance inspection on each storage layer; The test parameters configured for the storage layer include test duration, data read operation code, data write operation code, data erase operation code, bad block record code, and error correction code; The threshold voltage corresponding to each storage layer is the interval voltage for maintaining the stored data for a normal period of storage when the respective data is stored. The interval voltage includes an upper voltage threshold and a lower voltage threshold. When the storage voltage of the storage layer is within the interval voltage, it indicates that the current storage layer is in a normal working state. Otherwise, the current storage layer is in an abnormal working state. When the hardware reset of each storage layer where the three-dimensional stacked memory is located is successfully completed, and each storage layer is not found to have defects that affect the storage structure after the appearance inspection, the initialization operation of the current three-dimensional stacked memory is successfully completed, otherwise, the initialization operation fails; The test duration is the time overhead required to test each storage layer in the three-dimensional stacked memory. The data read operation code is used to read data from each storage layer. The data write operation code is used to write data to each storage layer. The data erase operation code is used to erase data from each storage layer. The error correction code is used to try to perform corresponding repair operations when data reading, data writing or data erasure of a certain storage layer cannot be performed normally. Each storage layer is composed of several storage blocks. When a storage layer is tested, several storage blocks under the storage layer are tested. When a storage abnormality occurs in a storage block and cannot be repaired, it is marked by a bad block record code.

[0016] It should be further explained that, in a specific implementation process, according to the structural type of the storage layer, a layered test mode of the current three-dimensional stacked memory is formulated, and a process of testing each storage layer of the three-dimensional stacked memory according to the layered test mode includes: Analyze the component structure distribution of the first storage layer, the second storage layer, and the third storage layer in the three-dimensional stacked memory in turn, and then determine whether there are storage layers of the same structural type, and select a corresponding layered test mode for the storage layer of the current three-dimensional stacked memory according to the determination result; The hierarchical test mode includes a parallel test mode and an independent test mode; If there are storage layers of the same structural type in the three-dimensional stacked memory, the storage layers of the same structural type are marked as storage layers of the same category; if there are no storage layers of the same structural type in the three-dimensional stacked memory, all storage layers of the current three-dimensional stacked memory are marked as storage layers of different categories; The hierarchical test mode selected for storage layers of the same category is the parallel test mode; The tiered test mode selected for the heterogeneous storage tiers is the independent test mode; After each storage layer of the three-dimensional stacked memory has completed its corresponding layered test mode, each storage layer of the three-dimensional stacked memory is tested according to the layered test mode of each storage layer and the test parameters corresponding to the initialization operation.

[0017] The number of storage layers in the parallel test mode in the three-dimensional stacked memory is recorded as Number, and the value of Number is 2 and 3; When Number=2, a test start interval is set for the two storage layers in parallel test mode, and the test of the upper storage layer is started first, and timing is performed synchronously. When the timing duration reaches the test start interval, the test of the other storage layer in parallel test mode is started; When Number=3, set the test time difference between the first storage layer and the second storage layer, set the test time difference between the second storage layer and the third storage layer, and start the test of the first storage layer, the second storage layer, and the third storage layer in sequence according to the order from the upper layer to the lower layer and the test duration; The parallel test mode is carried out by constructing a parallel test script. The parallel test script gives priority to testing the upper storage layer in the three-dimensional stacked memory, records the test operation instructions of the current test, and feeds back the test operation instructions to other storage layers currently in the same parallel test mode. Other storage layers complete the test of their own storage layers according to the test operation instructions. That is, the parallel test mode not only synchronously tests multiple storage layers in the three-dimensional stacked memory, but also the test results of the storage layer in the upper layer in the structure of the three-dimensional stacked memory can be used to guide the test of the storage layer in the lower layer in the structure; The independent test mode tests each storage layer in the three-dimensional stacked memory separately in turn. After the test of the first storage layer is completed, the test of the second storage layer is started. Similarly, after the test of the second storage layer is completed, the test of the third storage layer is started.

[0018] It should be further explained that, in a specific implementation process, if a storage abnormality is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected in detail, the storage position and storage type of the storage layer to be inspected in detail are recorded, and the process of performing a full-domain test of the storage layer to be inspected in detail includes: According to the parallel test mode or the independent test mode, each storage layer where the three-dimensional stacked memory is located is tested, and the types of tests include data reading, data writing and data erasing. When each storage layer is tested, data reading, data writing and data erasing are performed on a plurality of storage blocks included in each storage layer in turn; When the first storage block in a storage layer that cannot read data, write data or erase data normally is detected, the corresponding storage block is repaired according to the error correction code. If the repair is successful, the next storage block in the current storage layer is tested until the storage blocks of all storage layers are tested; if the repair fails, the current storage block is marked as a bad block through the bad block record code; When all storage layers in the three-dimensional stacked memory have completed the test and no bad blocks are found, the test ends; If a bad block appears in a certain storage layer of the three-dimensional stacked memory, the detection result is that a storage abnormality occurs in the current storage layer, and the corresponding storage layer is marked as a storage layer to be inspected in detail, and the storage position of the storage layer to be inspected in detail in the three-dimensional stacked memory and the storage type of the data stored in the storage layer to be inspected in detail are recorded; Perform a global test on all storage layers to be inspected. The content of the global test is as follows: For a number of storage blocks included in each storage layer to be inspected, all bad blocks therein are located, and functional tests, performance tests, and error injection tests are performed on each bad block in the storage layer to be inspected in turn; Then, the specific abnormal storage type in each bad block is obtained, and the abnormal storage type includes functional abnormality, performance abnormality and correction processing abnormality. When the functional test of the storage block fails, the storage block is in functional abnormality, when the performance test of the storage block fails, the storage block is in performance abnormality, and when the error injection test of the storage block fails, the storage block is in correction processing abnormality; Record the location coordinates of each bad block in the storage layer to be inspected, and record the abnormal storage type of each bad block. When all the bad blocks in a storage layer to be inspected have been tested, end the global test of the current storage layer to be inspected. When all the bad blocks included in all storage layers to be inspected in the three-dimensional stacked memory have been tested, end the final global test of the three-dimensional stacked memory.

[0019] It should be further explained that, in a specific implementation process, according to the test results of the global test, the process of locating all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory includes: The test results of the full-domain test of the three-dimensional stacked memory are obtained. The test results are the position coordinates of the bad blocks in each storage layer, and the abnormal storage type corresponding to each bad block. The areas corresponding to the bad blocks with adjacent position coordinates in each storage layer of the three-dimensional stacked memory are integrated as abnormal storage boundaries. If there are no bad blocks with adjacent position coordinates in the storage layer, the area of ​​the corresponding bad block is used separately as the abnormal storage boundary, thereby locating all the abnormal storage boundaries in each storage layer of the three-dimensional stacked memory.

[0020] It should be further explained that, in a specific implementation process, the process of diagnosing and repairing the abnormal storage boundary and then converting the abnormal storage boundary into a normal storage boundary includes: In each storage layer of the three-dimensional stacked memory, the boundary area of ​​each located abnormal storage boundary is obtained, and the processing priority of each abnormal storage boundary corresponding to the boundary area is set in descending order according to the boundary area from large to small; Arrange relevant professionals to inspect and repair the three-dimensional stacked memory, and diagnose and repair each abnormal storage boundary in the three-dimensional stacked memory in sequence according to the order of processing priority set for the abnormal storage boundary, and then convert all the abnormal storage boundaries in the three-dimensional stacked memory into corresponding normal storage boundaries to complete the final inspection of the three-dimensional stacked memory.

[0021] The above embodiments are only used to illustrate the technical method of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical method of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical method of the present invention.

Claims

1. A layered testing method for a three-dimensional stacked memory, characterized in that: The following steps are involved: Step S1: performing an initialization operation on each storage layer of the three-dimensional stacked memory, formulating a layered test mode of the current three-dimensional stacked memory according to the structure type of the storage layer, and testing each storage layer of the three-dimensional stacked memory according to the layered test mode; Step S2: if a storage abnormality is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected in detail, the storage position and storage type of the storage layer to be inspected in detail are recorded, and a full-domain test of the storage layer to be inspected is performed; If no storage anomaly is detected in all storage layers of the three-dimensional stacked memory, the test is terminated; Step S3: According to the test result of the global test, all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory are located, and the abnormal storage boundaries are diagnosed and repaired, and then the abnormal storage boundaries are converted into normal storage boundaries.

2. The layered testing method of the three-dimensional stacked memory according to claim 1, characterized in that: The process of initializing each storage layer of the three-dimensional stacked memory includes: The three-dimensional stacked memory is composed of a first storage layer, a second storage layer and a third storage layer, and each storage layer is initialized in turn, wherein the initialization operation includes configuring test parameters corresponding to each storage layer, setting a threshold voltage corresponding to each storage layer, performing a hardware reset on each storage layer, and performing an appearance inspection on each storage layer; The test parameters configured for the storage layer include test duration, data read operation code, data write operation code, data erase operation code, bad block record code, and error correction code; When the hardware reset of each storage layer where the three-dimensional stacked memory is located is successfully completed, and no defects that affect the storage structure are found in each storage layer after appearance inspection, the initialization operation of the current three-dimensional stacked memory is successfully completed, otherwise, the initialization operation fails.

3. The layered testing method of the three-dimensional stacked memory according to claim 2, characterized in that: According to the structural type of the storage layer, a layered test mode of the current three-dimensional stacked memory is formulated, and a process of testing each storage layer of the three-dimensional stacked memory according to the layered test mode includes: Analyze the component structure distribution of the first storage layer, the second storage layer, and the third storage layer in the three-dimensional stacked memory in turn, and then determine whether there are storage layers of the same structural type, and select a corresponding layered test mode for the storage layer of the current three-dimensional stacked memory according to the determination result; Hierarchical test modes include parallel test mode and independent test mode; If there are storage layers of the same structural type in the three-dimensional stacked memory, the storage layers of the same structural type are marked as storage layers of the same category; if there are no storage layers of the same structural type in the three-dimensional stacked memory, all storage layers of the current three-dimensional stacked memory are marked as storage layers of different categories; The hierarchical test mode selected for storage layers of the same category is the parallel test mode; The tiered test mode selected for the heterogeneous storage tiers is the independent test mode; After each storage layer of the three-dimensional stacked memory has completed its corresponding layered test mode, each storage layer of the three-dimensional stacked memory is tested according to the layered test mode of each storage layer and the test parameters corresponding to the initialization operation.

4. The layered testing method of the three-dimensional stacked memory according to claim 3, characterized in that: The parallel test mode synchronously tests multiple storage layers in the three-dimensional stacked memory, and the test results of the storage layer in the upper layer are used to guide the test of the storage layer in the lower layer. The independent test mode tests each storage layer in the three-dimensional stacked memory in turn. When the test of the first storage layer is completed, the test of the second storage layer is started. After the test of the second storage layer is completed, the test of the third storage layer is started.

5. The layered testing method of the three-dimensional stacked memory according to claim 4, characterized in that: If a storage abnormality is detected in a certain storage layer of the three-dimensional stacked memory, the corresponding storage layer is marked as a storage layer to be inspected, the storage location and storage type of the storage layer to be inspected are recorded, and a full-domain test of the storage layer to be inspected is performed. The process includes: According to a parallel test mode or an independent test mode, each storage layer where the three-dimensional stacked memory is located is tested, and the types of tests include data reading, data writing and data erasing. When the first storage block in a storage layer that cannot normally read data, write data or erase data is detected, a repair operation is performed on the corresponding storage block according to an error correction code; If the repair is successful, the next storage block in the current storage layer will continue to be tested until the storage blocks of all storage layers are tested; if the repair fails, the current storage block will be marked as a bad block through the bad block record code. When all storage layers in the three-dimensional stacked memory have been tested and no bad blocks are found, the test will end; If a bad block appears in a certain storage layer of the three-dimensional stacked memory, the detection result is that a storage abnormality occurs in the current storage layer. The corresponding storage layer is marked as a storage layer to be inspected in detail, and the storage position of the storage layer to be inspected in detail in the three-dimensional stacked memory and the storage type of the data stored in the storage layer to be inspected are recorded; a full-domain test is performed on all storage layers to be inspected in detail.

6. The layered testing method of the three-dimensional stacked memory according to claim 5, characterized in that: The process of full-domain testing includes: For each storage block included in the storage layer to be inspected, all bad blocks are located, and each bad block in the storage layer to be inspected is tested for functionality, performance, and error injection in turn; and then the specific abnormal storage type in each bad block is obtained, and the abnormal storage type includes functional abnormality, performance abnormality, and correction processing abnormality; Record the location coordinates of each bad block in the storage layer to be inspected, and record the abnormal storage type of each bad block. When all the bad blocks in a storage layer to be inspected have been tested, end the global test of the current storage layer to be inspected. When all the bad blocks included in all storage layers to be inspected in the three-dimensional stacked memory have been tested, end the final global test of the three-dimensional stacked memory.

7. The layered testing method of the three-dimensional stacked memory according to claim 6, characterized in that: According to the test results of the global test, the process of locating all abnormal storage boundaries of the corresponding storage layer of the three-dimensional stacked memory includes: The test results of the full-domain test of the three-dimensional stacked memory are obtained. The test results are the position coordinates of the bad blocks in each storage layer, and the abnormal storage type corresponding to each bad block. The areas corresponding to the bad blocks with adjacent position coordinates in each storage layer of the three-dimensional stacked memory are integrated as abnormal storage boundaries. If there are no bad blocks with adjacent position coordinates in the storage layer, the area of ​​the corresponding bad block is used separately as the abnormal storage boundary, thereby locating all the abnormal storage boundaries in each storage layer of the three-dimensional stacked memory.

8. The layered testing method of the three-dimensional stacked memory according to claim 7, characterized in that: The process of diagnosing and repairing the abnormal storage boundary and converting the abnormal storage boundary into a normal storage boundary includes: In each storage layer of the three-dimensional stacked memory, the boundary area of ​​each located abnormal storage boundary is obtained, and the processing priority of each abnormal storage boundary corresponding to the boundary area is set in descending order according to the boundary area from large to small; Arrange relevant professionals to inspect and repair the three-dimensional stacked memory, and diagnose and repair each abnormal storage boundary in the three-dimensional stacked memory in turn according to the order of processing priority set for the abnormal storage boundary, and then convert all abnormal storage boundaries in the three-dimensional stacked memory into corresponding normal storage boundaries.

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