Deposition processing chamber

Abstract

A deposition processing chamber, comprising: a chamber; the liftable loader is located in the cavity and comprises a bearing table used for bearing a wafer; the edge ring is located in the cavity and surrounds the bearing table in the process position, and the edge ring comprises a first edge ring and a second edge ring above the first edge ring; and the lifter is located in the cavity and located at the bottom of the edge ring, a plurality of first supporting parts are arranged on the lifter, and the first supporting parts are used for adjusting the height of the edge ring so as to adjust the longitudinal gap between the first edge ring and the second edge ring. According to the embodiment of the invention, the longitudinal gap between the first edge ring and the second edge ring can be adjusted according to actual process requirements, so that the pressure difference between the upper chamber and the lower chamber is adjusted, a gas flow field in the upper chamber is relatively uniform, precursor gas is conveniently diffused and adsorbed on the upper surface of a wafer in a saturated manner, and the efficiency of the wafer is improved. And the uniformity of the thickness of the deposited film layer can be improved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a deposition processing chamber. Background Art

[0002] Semiconductor equipment is equipment for making chips. With the rapid growth of the semiconductor integrated circuit (IC) industry, semiconductor technology continues to advance towards smaller process nodes driven by Moore's Law, making integrated circuits develop in the direction of smaller size, higher circuit precision and higher circuit complexity. Semiconductor equipment has become the core of the breakthrough of advanced process chips.

[0003] The chip manufacturing process usually includes the step of depositing a film layer on the wafer. Nowadays, as the process node continues to shrink, the thickness of the film layer is also getting smaller and smaller, which makes the quality requirements of the film layer more stringent, making it difficult for the film layer prepared by traditional deposition equipment to meet the current quality requirements.

[0004] Therefore, there is an urgent need for a deposition processing chamber of a semiconductor device to improve the film quality of the deposition process. Summary of the invention

[0005] The problem solved by the embodiments of the present invention is to provide a deposition processing chamber to improve the quality of film deposition.

[0006] To solve the above problems, an embodiment of the present invention provides a deposition processing chamber, comprising: a chamber; a liftable carrier located in the chamber, the liftable carrier comprising a carrier table for carrying wafers; an edge ring located in the chamber and surrounding the carrier table when in a process position, the edge ring and the carrier table when in the process position are used to divide the chamber into an upper chamber and a lower chamber, the edge ring comprising a first edge ring and a second edge ring located above the first edge ring, the horizontal projection of the second edge ring partially overlapping with the horizontal projection of the first edge ring; a lifter located in the chamber and at the bottom of the edge ring, a plurality of first supporting components are arranged on the lifter, the first supporting components are used to adjust the height of the first edge ring or the second edge ring to adjust the longitudinal gap between the first edge ring and the second edge ring.

[0007] Optionally, the deposition processing chamber further includes: a boss disposed on the inner wall of the chamber, the boss having a step toward the supporting platform, and a gap between the boss and the supporting platform in a direction parallel to the surface of the supporting platform; either the first edge ring and the second edge ring are located on the step of the boss, or the first edge ring and the second edge ring are located on steps of different heights.

[0008] Optionally, the step includes a first step; a portion of the first edge ring away from the supporting platform is located on the first step; the first supporting component is located on the side of the first step and is used to lift the first edge ring to adjust the height of the first edge ring.

[0009] Optionally, the step includes a second step; the second edge ring is disposed on the second step and partially exposed from the second step; and the first supporting component is used to lift the second edge ring exposed from the second step to adjust the height of the second edge ring.

[0010] Optionally, the step also includes a first step; the part of the first edge ring away from the supporting platform is located on the first step; the boss has a first through hole located at the position of the second step, and the first through hole exposes the second step; the first supporting component is located at the position of the second step, and is used to lift the second edge ring through the first through hole to adjust the height of the second edge ring.

[0011] Optionally, the step of the boss includes a first step, and a third step is provided at the edge of the top surface of the carrier platform; a portion of the first edge ring away from the carrier platform is located on the first step, and when the carrier platform is located at the process position, a portion of the first edge ring close to the carrier platform is located on the third step.

[0012] Optionally, the first edge ring includes a first fixing portion, a second fixing portion, and a first ring wall connecting the first fixing portion and the second fixing portion, the first fixing portion is located on the first step, and the second fixing portion is located on the third step; the second edge ring includes a third fixing portion and a second ring wall connecting the third fixing portion, the second ring wall is located on the side of the first ring wall facing the supporting platform, and is arranged opposite to the first ring wall.

[0013] Optionally, a plurality of second through holes are formed in the carrier platform; a plurality of second supporting components are arranged in the second through holes, and the second supporting components are used to receive wafers through the second through holes.

[0014] Optionally, when the height of the first support member is greater than the height of the second support member, the distance between adjacent first support members is greater than the diameter of the wafer, and the positional relationship between the first support member, the carrier platform and the lifter satisfies: E+F<C+D; when the height of the first support member is greater than or equal to the height of the second support member, the distance between adjacent first support members is greater than √3 times the radius of the wafer, and the positional relationship between the first support member, the carrier platform and the lifter satisfies: E+F<C+D; wherein E is the distance between the first support member and the edge ring to be adjusted when the carrier platform is at the process position and the lifter is at the wafer taking position, F is the adjustable longitudinal gap between the first edge ring and the second edge ring when the carrier platform is at the process position, D is the height difference between the carrier platform at the process position and the initial position, and C is the distance that the lifter can move when the carrier platform is at the initial position.

[0015] Optionally, the height of the first supporting component ranges from 45 mm to 75 mm.

[0016] Optionally, when the supporting platform is located at the process position, the adjustable longitudinal gap between the first edge ring and the second edge ring is less than or equal to 2 mm.

[0017] Optionally, the first supporting components are evenly distributed along the circumferential direction on the lifter, and the number of the first supporting components is 3.

[0018] Optionally, the lifter further includes a first leveling mechanism, and the first supporting component is located on a leveling plane of the first leveling mechanism.

[0019] Optionally, the material of the edge ring includes one or both of quartz and metal.

[0020] Optionally, the surface of the edge ring is a first rough surface, and the surface roughness of the first rough surface ranges from 2.0 microns to 2.5 microns.

[0021] Optionally, the chamber has a top cover, the top cover has an air inlet channel and an exhaust channel surrounding the air inlet channel, and the exhaust channel and the air inlet channel are sealed with each other; the deposition processing chamber also includes: a gas uniforming plate, located between the top cover and the supporting platform, the gas uniforming plate has a plurality of air inlet holes located in the central area, and exhaust holes located in the edge area, the exhaust holes are connected to the exhaust channel, and the air inlet holes are connected to the air inlet channel.

[0022] Optionally, the lateral dimension at the bottom position of the air inlet channel is greater than the lateral dimension at the top position of the air inlet channel; in the air inlet hole at the center position of the air uniforming disk, and the air inlet hole closest to the center position of the air uniforming disk, the lateral dimensions of the bottom position, middle position and top position of the air inlet hole are equal; in the air inlet holes at other positions, the lateral dimensions at the top and bottom positions of the air inlet hole are greater than the lateral dimension at the middle position; the lateral dimension of the exhaust hole at the bottom position is greater than the lateral dimension at the top position.

[0023] Optionally, the surfaces of the air inlet channel, the air exhaust channel, the air inlet hole, and the air exhaust hole are second rough surfaces, and the surface roughness of the second rough surfaces ranges from 2.0 microns to 2.5 microns.

[0024] Optionally, an inner sealing ring and an outer sealing ring are embedded in the bottom surface of the top cover, the inner sealing ring is arranged on the side of the air extraction channel facing the air intake channel, and the outer sealing ring is arranged on the side of the air extraction channel facing away from the air intake channel.

[0025] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0026] A deposition processing chamber provided in an embodiment of the present invention comprises: a liftable carrier located in the chamber, the liftable carrier comprising a carrier platform for carrying a wafer, an edge ring located in the chamber, the edge ring and the carrier platform in a process position being used to divide the chamber into an upper chamber and a lower chamber, the edge ring comprising a first edge ring and a second edge ring located above the first edge ring, and a lifter located in the chamber and at the bottom of the edge ring, a plurality of first supporting components being arranged on the lifter, the first supporting components being used to adjust the height of the first edge ring or the second edge ring so as to adjust the longitudinal gap between the first edge ring and the second edge ring, so that before the deposition process is performed, the longitudinal gap between the first edge ring and the second edge ring can be adjusted according to actual process requirements, thereby adjusting the pressure difference between the upper chamber and the lower chamber, so that the gas flow field in the upper chamber is more uniform, so as to facilitate the diffusion of the precursor gas and saturation adsorption on the upper surface of the wafer, thereby making the difference between the thickness of the edge area and the thickness of the central area of ​​the deposited film layer smaller, which is beneficial to improving the uniformity of the thickness of the deposited film layer, and correspondingly also improving the film layer quality of the deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic diagram of the structure of a deposition processing chamber;

[0028] Figure 2 is a schematic structural diagram of a first embodiment of a deposition processing chamber of the present invention;

[0029] Figure 3 It is a structural schematic diagram of the first embodiment of the deposition processing chamber of the present invention when the carrier table is in the process position and the elevator is in the film taking position;

[0030] Figure 4 is a schematic structural diagram of a first embodiment of a deposition processing chamber of the present invention, in which a carrier platform is in a process position and a first support member adjusts an edge ring;

[0031] Figure 5 is a structural schematic diagram of the positional relationship between the first support member, the first edge ring, the second edge ring, the wafer carrier, and the boss in the first embodiment of the present invention;

[0032] Figure 6 It is a structural schematic diagram of the positional relationship among the first support member, the first edge ring, the second edge ring, the wafer carrier, and the boss in the second embodiment of the present invention. DETAILED DESCRIPTION

[0033] At present, the film quality of the deposition process still needs to be improved. Now, combined with a deposition processing chamber, the reasons why the film quality of the deposition process needs to be improved are analyzed. Figure 1 It is a schematic diagram of the structure of a deposition processing chamber.

[0034] refer to Figure 1 The deposition processing chamber includes: a chamber 10; a liftable carrier 11, which is located in the chamber 10, and the liftable carrier 11 includes a carrier platform 12 for carrying wafers; an edge ring 13, which is located in the chamber 10 and surrounds the carrier platform 12 when it is in a process position, and the edge ring 13 and the carrier platform 12 when it is in the process position are used to divide the chamber 10 into an upper chamber 16 and a lower chamber 17, and the edge ring 13 includes a first edge ring 14 fixed on the side wall of the carrier platform 12, and a second edge ring 15 located above the first edge ring 14, and the horizontal projection of the second edge ring 15 partially overlaps with the horizontal projection of the first edge ring 14.

[0035] Through research, it is found that, since the first edge ring 14 is fixed on the side wall of the carrier 12, the longitudinal distance between the first edge ring 14 and the second edge ring 15 is determined by the height of the carrier 12 when it is in the process position. Therefore, when the height of the carrier 12 when it is in the process position is determined, the longitudinal distance between the first edge ring 14 and the second edge ring 15 is also determined and cannot be adjusted. However, when the deposition processing chamber of the deposition equipment deposits different types of film layers, the pressure difference requirements between the upper chamber 16 and the lower chamber 17 are different, and accordingly, the requirements for the longitudinal distance between the first edge ring 14 and the second edge ring 15 are not the same. Therefore, when the longitudinal distance between the first edge ring 14 and the second edge ring 15 cannot be adjusted, it is easy to make the thickness uniformity of the deposited film layer poor, and it is especially easy to make the thickness of the edge area of ​​the deposited film layer larger.

[0036] In order to solve the above technical problems, an embodiment of the present invention provides a deposition processing chamber, comprising: a chamber; a liftable carrier located in the chamber, the liftable carrier comprising a carrier table for carrying wafers; an edge ring located in the chamber and surrounding the carrier table when in a process position, the edge ring and the carrier table when in the process position are used to divide the chamber into an upper chamber and a lower chamber, the edge ring comprising a first edge ring and a second edge ring located above the first edge ring, the horizontal projection of the second edge ring partially overlapping with the horizontal projection of the first edge ring; a lifter located in the chamber and at the bottom of the edge ring, a plurality of first supporting components are arranged on the lifter, the first supporting components are used to adjust the height of the first edge ring or the second edge ring to adjust the longitudinal gap between the first edge ring and the second edge ring.

[0037] The scheme disclosed in the embodiment of the present invention includes a liftable carrier located in the chamber, the liftable carrier includes a carrier table for carrying a wafer, an edge ring located in the chamber, the edge ring and the carrier table in the process position are used to divide the chamber into an upper chamber and a lower chamber, the edge ring includes a first edge ring and a second edge ring located above the first edge ring, and a lifter located in the chamber and at the bottom of the edge ring, and a plurality of first supporting components are arranged on the lifter, the first supporting components are used to adjust the height of the first edge ring or the second edge ring to adjust the longitudinal gap between the first edge ring and the second edge ring, so that before the deposition process is performed, the longitudinal gap between the first edge ring and the second edge ring can be adjusted according to the actual process requirements, thereby adjusting the pressure difference between the upper chamber and the lower chamber, so that the gas flow field in the upper chamber is more uniform, so as to facilitate the diffusion of the precursor gas and saturated adsorption on the upper surface of the wafer, thereby making the difference between the thickness of the edge area and the thickness of the central area of ​​the deposited film layer smaller, which is beneficial to improve the uniformity of the thickness of the deposited film layer, and correspondingly improves the film layer quality of the deposition process.

[0038] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0039] Figure 2 is a schematic structural diagram of a first embodiment of a deposition processing chamber of the present invention, Figure 3 1 is a schematic diagram of the structure of the first embodiment of the deposition processing chamber of the present invention when the carrier table is in the process position and the elevator is in the film taking position. Figure 4 1 is a schematic diagram of the structure in which the carrier platform in the first embodiment of the deposition processing chamber of the present invention is in the process position and the first support member adjusts the edge ring. Figure 5 It is a structural schematic diagram of the positional relationship among the first support member, the first edge ring, the second edge ring, the wafer carrier, and the boss in the first embodiment of the present invention.

[0040] refer to Figures 2 to 5In this embodiment, the deposition processing chamber 100 includes: a chamber 101; a liftable carrier 110, located in the chamber 101, the liftable carrier 110 includes a carrier table 111 for carrying a wafer; an edge ring 120, located in the chamber 101 and surrounding the carrier table 111 when it is in a process position, the edge ring 120 and the carrier table 111 when it is in the process position are used to divide the chamber 101 into an upper chamber 102 and a lower chamber 103, the edge ring 120 includes a first edge ring 121, and a second edge ring 122 located above the first edge ring 121, wherein a horizontal projection of the second edge ring 122 partially overlaps with a horizontal projection of the first edge ring 121; a lifter 130 located in the chamber 101 and at the bottom of the edge ring 120, wherein a plurality of first support components 131 are provided on the lifter 130, wherein the first support components 131 are used to adjust a height of the first edge ring 121 or the second edge ring 122 so as to adjust a longitudinal gap between the first edge ring 121 and the second edge ring 122.

[0041] It should be noted that in Figure 2 In the figure, the dotted line indicates the height of the carrier when it is in the process position, the solid line indicates the height of the carrier when it is in the initial position, and Figure 2 In the embodiment, the lifter is in a film taking position; Figure 2 The height of the first support member in Figure 3 and Figure 4 The height of the first supporting member is different.

[0042] The process position refers to the position of the carrier 111 during the deposition process, and the initial position refers to the lowest position of the carrier 111. The lifter 130 at the wafer removal position refers to the position of the lifter 130 when the second support member receives the wafer.

[0043] The chamber 101 is used to provide a space for arranging a liftable carrier 110 , an edge ring 120 , and a lifter 130 .

[0044] The upper chamber 102 is used as a reaction chamber for deposition processing, and the lower chamber 103 is used as a transmission channel between the transmission port and the upper chamber 102, so that the wafer 190 (such as Figure 2 As shown) is transferred to the upper chamber 102 via the lower chamber 103 for deposition processing, or the wafer 190 after deposition processing is transferred to the transfer port via the lower chamber 103 for subsequent processes.

[0045] It should be noted that, during the deposition process, the pressure of the lower chamber 103 is greater than the pressure of the upper chamber 102 .

[0046] In this embodiment, the chamber 101 has a top cover 104, and the top cover 104 has an air inlet channel 1041 (such as Figure 2 ) and an air extraction channel 1042 (as shown) surrounding the air inlet channel 1041 Figure 2 As shown), the air exhaust channel 1042 and the air inlet channel 1041 are sealed with each other.

[0047] The gas inlet channel 1041 is used as a channel for the precursor gas or the purge gas to enter the chamber 101 when the precursor gas or the purge gas is provided to the chamber 101 .

[0048] The exhaust channel 1042 is used as a channel for gas (eg, remaining precursor gas, remaining reaction gas, or purge gas) to leave the chamber 101 when the chamber 101 is subjected to exhaust processing.

[0049] The exhaust channel 1042 and the air inlet channel 1041 are sealed with each other, which helps to reduce the probability of cross-talk between the gas in the exhaust channel 1042 and the precursor gas or purge gas in the air inlet channel 1041 .

[0050] Specifically, the deposition processing chamber 100 also includes: a gas uniforming plate 105, located between the top cover 104 and the supporting platform 111, the gas uniforming plate 105 has a plurality of air inlet holes 1051 located in a central area (not marked), and exhaust holes 1052 located in an edge area (not marked), the exhaust holes 1052 are connected to the exhaust channel 1042, and the air inlet holes 1051 are connected to the air inlet channel 1041.

[0051] As an example, the shape of the gas distribution disk 105 is circular.

[0052] The gas uniforming disk 105 is helpful to improve the uniformity of the precursor gas distribution in the upper chamber 102, thereby helping to improve the thickness uniformity of the deposited film layer, and is helpful to improve the uniformity of the purge gas distribution in the upper chamber 102, thereby achieving a better effect of the purge treatment of the upper chamber 102.

[0053] More specifically, the lateral dimension of the air inlet channel 1041 at the bottom position is greater than the lateral dimension of the air inlet channel 1041 at the top position; in the air inlet hole 1051 at the center position of the air uniforming disk 105, and the air inlet hole 1051 closest to the center position of the air uniforming disk 105, the lateral dimensions of the bottom position, middle position and top position of the air inlet hole 1051 are equal; in the air inlet holes 1051 at the remaining positions, the lateral dimensions of the air inlet hole 1051 at the top and bottom positions are greater than the lateral dimension at the middle position; the lateral dimension of the air exhaust hole 1052 at the bottom position is greater than the lateral dimension at the top position.

[0054] The lateral dimension at the bottom position of the air inlet channel 1041 is greater than the lateral dimension at the top position of the air inlet channel 1041. In the air inlet hole 1051 at the center position of the air uniforming disk 105 and the air inlet hole 1051 closest to the center position of the air uniforming disk 105, the lateral dimensions of the bottom position, middle position and top position of the air inlet hole 1051 are equal. In the air inlet holes 1051 at other positions, the lateral dimensions at the top and bottom positions of the air inlet hole 1051 are greater than the lateral dimension at the middle position, which is beneficial to further improve the uniformity of the gas flow field in the upper chamber 102, that is, it is beneficial to improve the uniformity of the precursor gas in the upper chamber 102, thereby helping to reduce the probability of a larger thickness in the central area of ​​the deposited film layer, and further helping to improve the thickness uniformity of the deposited film layer.

[0055] The lateral dimension of the bottom position of the exhaust hole 1052 is greater than the lateral dimension of the top position thereof, which is beneficial to improving the effect of the exhaust treatment, thereby facilitating improving the process efficiency of the deposition treatment.

[0056] As an example, the shape of the gas distribution disk 105 is circular. Accordingly, the gas inlet hole 1051 at the center of the gas distribution disk 105 refers to the gas inlet hole 1051 located at the center of the gas distribution disk 105 .

[0057] As an example, in the air inlet holes 1051 at other positions, the top and bottom of the air inlet holes 1051 are in a bell-mouth shape; the bottom of the air extraction hole 1052 is in a bell-mouth shape. In other implementations, in the air inlet holes at other positions, the top and bottom of the air inlet holes may also be in other suitable shapes; the bottom of the air extraction hole may also be in other suitable shapes.

[0058] It should be noted that the bottom surface of the top cover 104 is embedded with an inner sealing ring 1043 (such as Figure 2 As shown) and outer sealing ring 1044 (as Figure 2 As shown), the inner sealing ring 1043 is arranged on the side of the air extraction channel 1042 facing the air intake channel 1041, and the outer sealing ring 1044 is arranged on the side of the air extraction channel 1042 facing away from the air intake channel 1041.

[0059] An inner sealing ring 1043 and an outer sealing ring 1044 are embedded in the bottom surface of the top cover 104 , which is beneficial to reducing the probability of mutual sealing between the air extraction channel 1042 and the air intake channel 1041 .

[0060] It should also be noted that the surfaces of the air inlet channel 1041, the air extraction channel 1042, the air inlet hole 1051, and the air extraction hole 1052 are second rough surfaces (not shown), which are conducive to adsorbing foreign particles in the gas (for example, byproducts of precursor reactions), thereby reducing the probability of the chamber 101 or other components in the semiconductor device being contaminated by foreign particles. Moreover, after the second rough surface adsorbs foreign particles, the foreign particles can also be removed by cleaning, so that the top cover 104 and the gas homogenizing disk 105 can be reused, thereby helping to reduce process costs.

[0061] The surface roughness (Ra) of the second rough surface should not be too small or too large. If the surface roughness of the second rough surface is too small, the second rough surface may not be able to absorb foreign particles effectively. If the surface roughness of the second rough surface is too large, peeling may occur, thereby affecting the quality of the deposited film layer. Therefore, in this embodiment, the surfaces of the air inlet channel 1041, the air extraction channel 1042, the air inlet hole 1051, and the air extraction hole 1052 are second rough surfaces, and the surface roughness of the second rough surface ranges from 2.0 microns to 2.5 microns.

[0062] The liftable carrier 110 is used to move the carrier table 111 between an initial position and a process position so that the wafer 190 on the carrier table 111 is transferred from the lower chamber 103 to the upper chamber 102 , or the wafer 190 on the carrier table 111 is transferred from the upper chamber 102 to the lower chamber 103 .

[0063] The carrying platform 111 is used for carrying wafers.

[0064] In this embodiment, a plurality of second through holes (not marked) are formed in the carrier platform 111; a plurality of second supporting components 112 are arranged in the second through holes, and the second supporting components 112 are used to receive the wafer 190 through the second through holes, so that the wafer 190 is located on the top surface of the carrier platform 111 during the process of moving the carrier platform 111 from the initial position to the process position, thereby helping to reduce the difficulty of positioning the wafer 190 on the top surface of the carrier platform 111.

[0065] The edge ring 120 and the support platform 111 in the process position are used to divide the chamber 101 into an upper chamber 102 and a lower chamber 103, so that there is a pressure difference between the upper chamber 102 and the lower chamber 103, that is, the pressure of the lower chamber 103 is greater than the pressure of the upper chamber 102, thereby making it difficult for the remaining precursor gas or the remaining reaction gas in the upper chamber 102 to enter the lower chamber 103, thereby making the cleanliness of the lower chamber 103 better, and correspondingly reducing the probability of the remaining precursor gas or the remaining reaction gas in the upper chamber 102 entering other semiconductor equipment through the lower chamber 103.

[0066] The horizontal projection of the second edge ring 122 partially overlaps with the horizontal projection of the first edge ring 121, so that when the carrier 111 is located at the process position, there is a gap between the first edge ring 121 and the second edge ring 122. Therefore, when the pressure of the lower chamber 103 is greater than the pressure of the upper chamber 102, the gas flow can pass through the gap between the first edge ring 121 and the second edge ring 122 and enter the upper chamber 102 from the lower chamber 103, so as to reduce the probability of the remaining precursor gas or the remaining reaction gas in the upper chamber 102 entering the lower chamber 103.

[0067] In this embodiment, the edge ring 120 is disposed on the inner wall of the chamber 101. Specifically, the edge ring 120 is disposed on the inner wall of the chamber 101 through a boss.

[0068] In this embodiment, the material of the edge ring 120 includes one or both of quartz and metal.

[0069] Quartz and metal have good high temperature resistance, which is beneficial to prolong the service life of the edge ring 120. As an example, the material of the edge ring 120 includes quartz. In other embodiments, the material of the edge ring may also include metal or other materials with good heat resistance.

[0070] In this embodiment, the surface of the edge ring 120 is a first rough surface (not shown), which is conducive to adsorbing foreign particles in the chamber 101, reducing the probability of the chamber 101 or other components in the semiconductor device being contaminated by foreign particles. Moreover, after the foreign particles are adsorbed by the first rough surface, the foreign particles can also be removed by cleaning, so that the edge ring 120 can be reused, which is conducive to reducing process costs.

[0071] It should be noted that the surface roughness (Ra) of the first rough surface should not be too small or too large. If the surface roughness of the first rough surface is too small, the first rough surface may not be able to absorb foreign particles effectively. If the surface roughness of the first rough surface is too large, it may easily peel off, thereby affecting the quality of the deposited film layer. Therefore, in this embodiment, the surface of the edge ring 120 is the first rough surface, and the surface roughness of the first rough surface ranges from 2.0 microns to 2.5 microns.

[0072] Since the edge ring 120 is disposed on the inner wall of the chamber 101 via a boss, in this embodiment, the deposition processing chamber 101 further includes: a boss 106 (such as Figure 5 As shown), it is arranged on the inner wall of the chamber 101, the boss 106 has a step (not shown) facing the supporting platform 111, and the boss 106 and the supporting platform 111 are spaced apart in a direction parallel to the surface of the supporting platform 111; either the first edge ring 121 or the second edge ring 122 is located on the step of the boss 106, or the first edge ring 121 and the second edge ring 122 are located on steps of different heights.

[0073] The edge ring 120 is located on the step of the boss 106 , which helps to reduce the difficulty of assembling and replacing the edge ring 120 .

[0074] The boss 106 and the support platform 111 are spaced apart to provide a space for assembling the edge ring 120 disposed on the boss 106 .

[0075] In this embodiment, the steps include a first step 1061; the part of the first edge ring 121 away from the supporting platform 111 is located on the first step 1061, which is used to lift the first edge ring 121 for the first supporting component 131 to adjust the height of the first edge ring 121, providing a process basis.

[0076] Specifically, Figure 5 As shown, the steps of the boss 106 include a first step 1061, and a third step 1112 is provided at the edge of the top surface of the carrier platform 111; the portion of the first edge ring 121 away from the carrier platform 111 is located on the first step 1061, and when the carrier platform 111 is located at the process position, the portion of the first edge ring 121 close to the carrier platform 111 is located on the third step 1112, which helps to reduce the difficulty of matching the first edge ring 121 with the carrier platform 111.

[0077] In one embodiment, the steps include a first step 1061 and a second step 1062, the height of the second step 1062 is greater than the height of the first step 1061; the part of the first edge ring 121 away from the supporting platform 111 is located on the first step 1061, and the part of the second edge ring 122 away from the supporting platform 111 is located on the second step 1062.

[0078] As an example, Figure 5 As shown, the first edge ring 121 includes a first fixing portion 1211, a second fixing portion 1212, and a first ring wall 1213 connecting the first fixing portion 1211 and the second fixing portion 1212, the first fixing portion 1211 is located on the first step 1061, and the second fixing portion 1212 is located on the third step 1112; the second edge ring 122 includes a third fixing portion 1221 and a second ring wall 1222 connecting the third fixing portion 1221, the second ring wall 1222 is located on the side of the first ring wall 1213 facing the supporting platform 111, and is arranged opposite to the first ring wall 1213.

[0079] It should be noted that the first fixing portion 1211 and the second fixing portion 1212 extend in the transverse direction, and the first annular wall 1213 extends in the longitudinal direction; the third fixing portion 1221 extends in the transverse direction, and the second annular wall 1222 extends in the longitudinal direction.

[0080] The longitudinal direction refers to a direction perpendicular to the top surface of the carrying platform 111 ; and the transverse direction refers to a direction parallel to the top surface of the carrying platform 111 .

[0081] The first edge ring 121 includes a first fixing portion 1211, a second fixing portion 1212, and a first ring wall 1213, and the second edge ring 122 includes a third fixing portion 1221 and a second ring wall 1222, so that the first edge ring 121 is not easy to fall off, and accordingly the first edge ring 121 has better stability when it is set on the first step 1061, and it is beneficial to reduce the difficulty of matching the first edge ring 121 with the supporting platform 111.

[0082] Moreover, when the second edge ring 122 is set on the second step 1062, the second edge ring 122 includes a third fixing portion 1221 and a second ring wall 1222, so that the second edge 122 is not easy to fall off, which is also beneficial to the stability of the second edge ring 122 set on the second step 1062.

[0083] The lifter 130 is used to provide a process platform for setting up the first supporting component 131 .

[0084] Specifically, the lifter 130 is driven to move up and down by a motor (eg, a servo motor, a stepper motor, etc.); in other embodiments, the lifter can also be driven to move up and down by a transmission mechanism such as a synchronous belt, a worm gear, etc.

[0085] In this embodiment, a plurality of second through holes (not shown) are formed in the carrier 111; a plurality of second supporting members 112 are disposed in the second through holes, and the second supporting members 112 are used to receive the wafer 190 through the second through holes. Accordingly, the lifter 130 is also used to provide a supporting force for the bottom of the second supporting member 112 when the second supporting member 112 receives the wafer 190.

[0086] The first supporting component 131 is used to adjust the height of the first edge ring 121 or the second edge ring 122 to adjust the longitudinal gap F between the first edge ring 121 and the second edge ring 122, so that before the deposition process, the longitudinal gap F between the first edge ring 121 and the second edge ring 122 can be adjusted according to the actual process requirements, thereby adjusting the pressure difference between the upper chamber 102 and the lower chamber 103, so that the gas flow field in the upper chamber 102 is more uniform, thereby facilitating the diffusion of the precursor gas and saturated adsorption on the upper surface of the wafer, thereby making the difference between the thickness of the edge area and the thickness of the central area of ​​the deposited film layer smaller, which is beneficial to improving the uniformity of the thickness of the deposited film layer, and correspondingly improving the film layer quality of the deposition process.

[0087] In this embodiment, the step includes a first step 1061; a portion of the first edge ring 121 away from the carrier 111 is located on the first step 1061. Accordingly, the first supporting component 131 is located on the side of the first step 1061 and is used to lift the first edge ring 121 to adjust the height of the first edge ring 121.

[0088] In this embodiment, the first support components 131 are evenly distributed along the circumference of the lifter 130, and the number of the first support components 131 is 3, which makes it easy to make the tops of the first support components 131 located on the same plane, thereby facilitating lowering the height of the first edge ring 121 or the second edge ring 122.

[0089] Moreover, the first supporting components 131 are evenly distributed along the circumference of the lifter 130 , which is also conducive to enabling the first supporting part 131 to more stably support the first edge ring 121 or the second edge ring 122 when adjusting the height of the first edge ring 121 or the second edge ring 122 .

[0090] In this embodiment, the lifter 130 further includes a first leveling mechanism 132, and the first supporting member 131 is located on an adjustment plane 133 (eg, Figure 2 shown).

[0091] The first leveling mechanism 131 can level the first supporting component 131 so that the flatness uniformity of the top of the first supporting component 131 is better, which is beneficial to making the longitudinal gap F between the first edge ring 121 and the second edge ring 1222 at different positions after adjustment better uniform.

[0092] It should be noted that, when the number of the first supporting components 131 is three, using the first leveling mechanism 132 to level the top of the first supporting component 131 is also helpful in reducing the difficulty of the leveling process.

[0093] In this embodiment, a plurality of second through holes (not shown) are formed in the carrier 111; a plurality of second supporting members 112 are provided in the second through holes, and the second supporting members 112 are used to receive the wafer 190 through the second through holes. Accordingly, the lifter 130 may further include a second leveling mechanism (not shown), and the second leveling mechanism includes a second leveling plane (not shown).

[0094] The second leveling mechanism is used to make the flatness uniformity of the bottom of the second supporting component 112 better when the lifter 130 provides a supporting force for the bottom of the second supporting component 112 .

[0095] It should be noted that when the carrier 111 is located at the process position, the adjustable longitudinal gap F between the first edge ring 121 and the second edge ring 122 should not be too small or too large. If the adjustable longitudinal gap F between the first edge ring 121 and the second edge ring 122 is too large, it is easy to make the longitudinal gap F between the first edge ring 121 and the second edge ring 122 too large after adjustment, so that the effect of adjusting the pressure difference between the upper chamber 102 and the lower chamber 103 is not good. Therefore, in this embodiment, when the carrier 111 is located at the process position, the adjustable longitudinal gap F between the first edge ring 121 and the second edge ring 122 is less than or equal to 2 mm.

[0096] In this embodiment, when the height A of the first support member 131 (eg Figure 2When the height A of the first support member 131 is less than or equal to the height of the second support member 112, the distance between adjacent first support members 131 is greater than the diameter of the wafer 190; and the positional relationship between the first support member 131, the carrier 111 and the lifter 130 satisfies: E+F<C+D; when the height A of the first support member 131 is less than or equal to the height of the second support member 112, the distance between adjacent first support members 131 is greater than √3 times the radius of the wafer 190, and the first support member 131, the carrier 111 and the lifter 130 satisfy the following conditions: The positional relationship between them satisfies: E+F<C+D; wherein E is the distance between the first supporting component 131 and the edge ring 120 to be adjusted when the carrier 111 is located at the process position and the lifter 130 is located at the film-taking position, F is the adjustable longitudinal gap between the first edge ring 121 and the second edge ring 122 when the carrier 111 is located at the process position, D is the height difference between the carrier 111 at the process position and at the initial position, and C is the movable distance of the lifter 130 when the carrier 111 is located at the initial position.

[0097] When the height A of the first support member 131 is greater than the height of the second support member 112 , the distance between adjacent first support members 131 is greater than the diameter of the wafer 190 , which is beneficial in avoiding the edge of the wafer 190 from colliding with the first support member 131 during the process of transferring the wafer 190 to the chamber 101 .

[0098] Moreover, when the height A of the first support member 131 is greater than the height of the second support member 112, the distance between adjacent first support members 131 is greater than the diameter of the wafer 190, or, when the height A of the first support member 131 is less than or equal to the height of the second support member 112, the distance between adjacent first support members 131 is greater than √3 times the radius of the wafer 190, which is beneficial to ensure that the first support member 131 is located outside the wafer 190.

[0099] The positional relationship among the first supporting component 131 , the carrying platform 111 and the lifter 130 satisfies: E+F<C+D, which helps to avoid the top of the lifter 130 from colliding with the bottom of the carrying platform 111 .

[0100] As an example, when the size of the wafer 190 is 12 inches and the height A of the first support member 131 is greater than the height of the second support member 112, the distance between adjacent first support members 131 is greater than 300 mm. In other embodiments, when the size of the wafer is 6 inches and the height of the first support member is greater than the height of the second support member, the distance between adjacent first support members is greater than 150 mm; when the size of the wafer is 8 inches and the height of the first support member is greater than the height of the second support member, the distance between adjacent first support members is greater than 200 mm.

[0101] It should be noted that the height A of the first support member 131 should not be too small or too large. If the height A of the first support member 131 is too small or too large, it is easy to increase the difficulty of adjusting the longitudinal gap F between the first edge ring 121 and the second edge ring 122. Therefore, in this embodiment, the height A of the first support member 131 ranges from 45 mm to 75 mm.

[0102] In this embodiment, the deposition processing chamber 100 further includes a first pressure gauge (PT) (not labeled), a second pressure gauge (not labeled), a third pressure gauge (not labeled), and a fourth pressure gauge (not labeled).

[0103] The first pressure gauge is used to monitor the opening pressure of the upper chamber 102, so as to open the top cover of the counter chamber 101 when the pressure in the upper chamber 102 is close to the atmospheric pressure, thereby ensuring the safety of opening the cover.

[0104] The second pressure gauge is used to monitor the pressure of the upper chamber 102 during process treatment, so as to facilitate deposition treatment when the pressure of the upper chamber 102 meets the preset requirements.

[0105] The third pressure gauge is used to detect the pressure of the upper chamber 102 when not in process, so as to open the connection channel between the deposition device and other semiconductor devices when the pressure of the upper chamber 102 meets the preset requirements.

[0106] The fourth pressure gauge is used to monitor the pressure of the lower chamber 103 during process treatment, so as to make the pressure of the lower chamber 103 greater than the pressure of the upper chamber 102 during the deposition process.

[0107] Figure 6 It is a structural schematic diagram of the positional relationship among the first support member, the first edge ring, the second edge ring, the wafer carrier, and the boss in the second embodiment of the present invention.

[0108] The similarities between the second embodiment and the above embodiment are not described in detail here. Figure 6 The step includes a second step 2062; the second edge ring 222 is arranged on the second step 2062 and partially exposed from the second step 2062; the first supporting component 231 is used to lift the second edge ring 222 exposed from the second step 2062 to adjust the height of the second edge ring 222.

[0109] The second edge ring 222 is disposed on the second step 2062 and is partially exposed from the second step 2062 , so that the first supporting component 231 can adjust the height of the second edge ring 222 .

[0110] Specifically, the step also includes a first step 2061; the portion of the first edge ring 221 away from the supporting platform 211 is located on the first step 2061; the boss 206 has a first through hole (not marked) located at the position of the second step 2062, and the first through hole exposes the second step 2062; the first supporting component 231 is located at the position of the second step 2062, and is used to lift the second edge ring 222 via the first through hole to adjust the height of the second edge ring 222.

[0111] The boss 206 has a first through hole located at the second step 2062 , which helps to reduce the difficulty of partially exposing the second edge ring 222 from the second step 2062 .

[0112] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A deposition processing chamber, characterized in that: include: Chamber; A liftable carrier is located in the chamber, and the liftable carrier includes a carrier table for carrying a wafer; an edge ring located in the chamber and surrounding the carrier when in the process position, the edge ring and the carrier when in the process position being used to divide the chamber into an upper chamber and a lower chamber, the edge ring comprising a first edge ring and a second edge ring located above the first edge ring, a horizontal projection of the second edge ring partially overlapping with a horizontal projection of the first edge ring; A lifter is located in the chamber and at the bottom of the edge ring. A plurality of first support components are provided on the lifter. The first support components are used to adjust the height of the first edge ring or the second edge ring to adjust the longitudinal gap between the first edge ring and the second edge ring.

2. The deposition processing chamber according to claim 1, wherein: The deposition processing chamber further includes: a boss, which is arranged on the inner wall of the chamber, the boss having a step facing the carrying platform, and a gap between the boss and the carrying platform in a direction parallel to the surface of the carrying platform; Either the first edge ring or the second edge ring is located on a step of the boss, or the first edge ring and the second edge ring are located on steps of different heights.

3. The deposition processing chamber according to claim 2, wherein: The steps include a first step; The portion of the first edge ring away from the carrier platform is located on the first step; The first supporting component is located at a side of the first step and is used to lift the first edge ring to adjust the height of the first edge ring.

4. The deposition processing chamber according to claim 2, wherein: The steps include a second step; The second edge ring is disposed on the second step and partially exposed from the second step; The first supporting component is used to lift the second edge ring exposed on the second step to adjust the height of the second edge ring.

5. The deposition processing chamber according to claim 4, wherein: The steps also include a first step; The portion of the first edge ring away from the carrier platform is located on the first step; The boss has a first through hole located at the position of the second step, and the first through hole exposes the second step; The first supporting member is located at the position of the second step, and is used to lift the second edge ring through the first through hole to adjust the height of the second edge ring.

6. The deposition processing chamber according to claim 2, wherein: The steps of the boss include a first step, and the edge position of the top surface of the bearing platform has a third step; A portion of the first edge ring away from the carrier is located on the first step, and when the carrier is located at the process position, a portion of the first edge ring close to the carrier is located on the third step.

7. The deposition processing chamber according to claim 6, wherein: The first edge ring includes a first fixing portion, a second fixing portion, and a first ring wall connecting the first fixing portion and the second fixing portion, the first fixing portion is located on the first step, and the second fixing portion is located on the third step; The second edge ring includes a third fixing portion and a second ring wall connected to the third fixing portion. The second ring wall is located on a side of the first ring wall facing the supporting platform and is arranged opposite to the first ring wall.

8. The deposition processing chamber according to claim 1, wherein: A plurality of second through holes are formed in the carrier platform; a plurality of second supporting components are arranged in the second through holes, and the second supporting components are used to receive wafers through the second through holes.

9. The deposition processing chamber according to claim 1, wherein: When the height of the first support member is greater than the height of the second support member, the distance between adjacent first support members is greater than the diameter of the wafer, and the positional relationship between the first support member, the carrier platform and the lifter satisfies: E+F<C+D; When the height of the first support member is greater than or equal to the height of the second support member, the distance between adjacent first support members is greater than √3 times the radius of the wafer, and the positional relationship between the first support member, the carrier and the lifter satisfies: E+F<C+D; Among them, E is the distance between the first supporting component and the edge ring to be adjusted when the carrier is at the process position and the elevator is at the film-taking position, F is the adjustable longitudinal gap between the first edge ring and the second edge ring when the carrier is at the process position, D is the height difference between the carrier at the process position and the initial position, and C is the distance that the elevator can move when the carrier is at the initial position.

10. The deposition processing chamber according to claim 1, wherein: The height of the first supporting member ranges from 45 mm to 75 mm.

11. The deposition processing chamber according to claim 1, wherein: When the supporting platform is located at the process position, the adjustable longitudinal gap between the first edge ring and the second edge ring is less than or equal to 2 mm.

12. The deposition processing chamber according to claim 1, wherein: The first supporting components are evenly distributed on the lifter along the circumferential direction, and the number of the first supporting components is 3.

13. The deposition processing chamber according to claim 1, wherein: The lifter further comprises a first leveling mechanism, and the first supporting component is located on an adjustment plane of the first leveling mechanism.

14. The deposition processing chamber according to claim 1, wherein: The material of the edge ring includes one or both of quartz and metal.

15. The deposition processing chamber according to claim 1, wherein: The surface of the edge ring is a first rough surface, and the surface roughness of the first rough surface ranges from 2.0 micrometers to 2.5 micrometers.

16. The deposition processing chamber of claim 1, wherein: The chamber has a top cover, wherein the top cover has an air inlet channel and an air extraction channel surrounding the air inlet channel, and the air extraction channel and the air inlet channel are sealed with each other; The deposition processing chamber also includes: a gas uniforming plate, located between the top cover and the supporting platform, the gas uniforming plate has a plurality of air inlet holes located in the central area, and exhaust holes located in the edge area, the exhaust holes are connected to the exhaust channel, and the air inlet holes are connected to the air inlet channel.

17. The deposition processing chamber of claim 16, wherein: The transverse dimension at the bottom of the air inlet passage is greater than the transverse dimension at the top of the air inlet passage; In the air inlet hole at the center of the air uniforming disk and the air inlet hole closest to the center of the air uniforming disk, the lateral dimensions of the bottom, middle and top of the air inlet hole are equal; in the air inlet holes at other positions, the lateral dimensions of the top and bottom of the air inlet hole are greater than the lateral dimensions of the middle position; The transverse dimension of the air suction hole at the bottom position is greater than the transverse dimension of the air suction hole at the top position.

18. The deposition processing chamber of claim 16, wherein: The surfaces of the air inlet channel, the air extraction channel, the air inlet hole, and the air extraction hole are second rough surfaces, and the surface roughness of the second rough surfaces ranges from 2.0 microns to 2.5 microns.

19. The deposition processing chamber of claim 16, wherein: An inner sealing ring and an outer sealing ring are embedded in the bottom surface of the top cover. The inner sealing ring is arranged on the side of the air extraction channel facing the air intake channel, and the outer sealing ring is arranged on the side of the air extraction channel facing away from the air intake channel.

Images