Laser chip light source

Abstract

The invention discloses a laser chip light source, and relates to the technical field of illumination. The laser chip light source comprises a substrate, at least one light-emitting unit and a light-transmitting layer, the light-emitting units are arranged on the front face of the substrate, each light-emitting unit comprises a bonding pad and a laser chip which are sequentially arranged in the direction away from the front face of the substrate, in each light-emitting unit, the bonding pad comprises a circuit bonding pad and a fixed bonding pad, and the circuit bonding pad and the fixed bonding pad are arranged in the direction away from the front face of the substrate. The laser chip is fixed on the fixed bonding pad and is electrically connected with the line bonding pad; and the light transmitting layer is wrapped on the corresponding laser chips or covers the plurality of laser chips. The laser chip light source provided by the technical scheme of the invention has relatively high light emitting efficiency, and the laser chip can work under a high-power condition and can be better applied to the requirements of a high-power and high-lumen lighting market.

Description

Technical Field

[0001] The present application relates to the field of lighting technology, and in particular to a laser chip light source. Background Art

[0002] The most widely used LED lighting products on the market currently use LED chips as light-emitting components. As the power increases, the heat generated also increases. Higher heat easily leads to a decrease in the light output of the LED chip, or even LED chip failure. Therefore, the power of existing LED lighting products does not exceed 200W, and the light output efficiency is 100-120lm / W, which is difficult to meet the use needs of the high-power, high-lumen market, especially in some large-area application scenarios, such as stadiums, ports, docks, high-pole lighting and other fields.

[0003] Application Contents

[0004] The main purpose of this application is to propose a laser chip light source, aiming to solve the problems of low power and low light output efficiency of existing LED lighting products.

[0005] To achieve the above objectives, the present application proposes a laser chip light source, comprising:

[0006] A substrate having a front side and a back side opposite to each other, wherein the front side is arranged corresponding to the light emitting side;

[0007] At least one light-emitting unit is disposed on the front side of the substrate, each of the light-emitting units comprises a pad and a laser chip disposed in sequence in a direction away from the front side of the substrate, and in each of the light-emitting units, the pad comprises a circuit pad and a fixed pad, the laser chip is fixed to the fixed pad and electrically connected to the circuit pad; and,

[0008] A light-transmitting layer, wrapped on the corresponding laser chip or covering a plurality of the laser chips, so as to have a first packaging state or a second packaging state;

[0009] Wherein, in the first packaging state, there are multiple light-transmitting layers, and the multiple light-transmitting layers are wrapped on multiple corresponding laser chips, and the preparation materials of the light-transmitting layers include epoxy resin AB glue, hollow glass microbeads and fluorescent powder;

[0010] In the second packaging state, the light-transmitting layer is in a plate shape, used to cover the plurality of laser chips, and the raw materials for preparing the light-transmitting layer include hollow alumina balls, fluorescent materials and a binder.

[0011] In one embodiment, in the first packaging state, the light-transmitting layer includes the following raw materials in parts by weight: 80 to 91 parts of epoxy resin AB glue and 10 to 21 parts of powder;

[0012] The powder material includes hollow glass microspheres and fluorescent powder, and the weight ratio of the hollow glass microspheres to the fluorescent powder is (22-26): (4-8);

[0013] The particle size of the hollow glass microspheres is 30 to 70 μm, and the particle size of the phosphor is 1 to 20 μm.

[0014] In one embodiment, in the second packaging state, the light-transmitting layer includes the following raw materials in parts by weight: 40 to 60 parts of powder, 0.2 to 0.3 parts of sintering modifier, 7 to 8 parts of sintering aid, 15 to 25 parts of binder, 20 to 30 parts of deionized water, and 1 to 2 parts of dispersant.

[0015] 0.6-1.2 parts of plasticizer, 0.2-0.6 parts of defoamer;

[0016] Wherein, the powder includes hollow alumina balls, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the hollow alumina balls, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58-82): (10-12): (5-8): (0.05-0.15): (0.04-0.07): (0.20-0.30).

[0017] In one embodiment, the thickness of the light-transmitting layer is 0.1-0.4 mm.

[0018] In one embodiment, in each of the light-emitting units, the circuit pads include a positive electrode pad and a negative electrode pad, the positive electrode of the laser chip is electrically connected to the positive electrode pad via a gold wire, and the negative electrode is electrically connected to the negative electrode pad via a gold wire.

[0019] In one embodiment, each of the light-emitting units further comprises a group of electrode terminals and a group of conductive holes, wherein the group of electrode terminals comprises a positive electrode terminal and a negative electrode terminal disposed on the back side of the substrate, and the group of conductive holes comprises a positive electrode conductive hole and a negative electrode conductive hole penetrating the substrate;

[0020] In each of the light-emitting units, the positive electrode pad is electrically connected to the positive electrode terminal through the positive electrode conductive hole, and the negative electrode pad is electrically connected to the negative electrode terminal through the negative electrode conductive hole.

[0021] In one embodiment, in each of the light-emitting units, the positive electrode pad and the negative electrode pad define an inner region, the fixing pad is arranged in the inner region, and the laser chip is provided with a connecting pad corresponding to the fixing pad on a side close to the substrate.

[0022] In one embodiment, the fixing pad and the connecting pad are made of a gold-tin alloy.

[0023] In one embodiment, the laser chip is a blue laser chip; and / or,

[0024] The plurality of light emitting units are connected in series or in parallel; and / or,

[0025] The plurality of light emitting units are connected in series or in parallel.

[0026] In one embodiment, the substrate is selected from one of an aluminum oxide substrate, an aluminum nitride substrate and a sapphire substrate.

[0027] In the technical solution of the present application, when the circuit pad is connected to the power supply, the laser chip emits a blue parallel light beam, and the blue parallel light beam is irradiated to the light-transmitting layer. When in the first packaging state, the phosphor in the light-transmitting layer absorbs part of the blue light and then emits yellow light. The yellow light complements the blue light to form white light. Due to its special structure and refractive index, the hollow glass microbeads can effectively scatter the incident light. The hollow glass microbeads form a scattering center, so that the light is more evenly distributed in multiple directions, which can not only make the phosphor and the blue light more fully contact, but also make the light emit at a larger angle. The combination of hollow glass microbeads and phosphors can adjust the color of the light and the emission angle of the light, effectively improving the light output efficiency. The laser chip can work under high-power conditions and can be better applied to the needs of the high-power and high-lumen lighting market.

[0028] When in the second packaging state, the fluorescent component in the light-transmitting layer absorbs part of the blue light and emits yellow light. The yellow light complements the blue light to form white light. After high-temperature sintering, the hollow alumina spheres have a special structure and have better scattering properties for light. The hollow alumina spheres form scattering centers, which make the light more evenly distributed in multiple directions, so that the fluorescent component and the blue light can be more fully contacted, and the light can be emitted at a larger angle. The combination of the hollow alumina spheres and the fluorescent components can adjust the color of the light and the emission angle of the light, effectively improving the light output efficiency. The laser chip can work under high-power conditions and can be better applied to the needs of the high-power and high-lumen lighting market. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0030] Figure 1 A schematic structural diagram of an embodiment of a laser chip light source provided by the present application when in a first packaging state;

[0031] Figure 2 A schematic structural diagram of an embodiment of a laser chip light source provided by the present application when in a second packaging state;

[0032] Figure 3 for Figure 1 and Figure 2 A schematic diagram of the structure of the light-emitting unit;

[0033] Figure 4 for Figure 3 A schematic diagram of the structure of the circuit pad and the fixed pad;

[0034] Figure 5 for Figure 3 Schematic diagram of the structure of the connection pads on the laser chip;

[0035] Figure 6 for Figure 1 Schematic diagram of the three-dimensional structure of the light-transmitting layer corresponding to a single light-emitting unit;

[0036] Figure 7 for Figure 2 Schematic diagram of the cross-sectional structure of the light-transmitting layer corresponding to a single light-emitting unit.

[0037] Description of Figure Numbers:

[0038] 1. Substrate; 11. Positive electrode conductive hole; 12. Negative electrode conductive hole; 13. Positive electrode terminal; 14. Negative electrode terminal; 2. Light-emitting unit; 21. Positive electrode pad; 22. Negative electrode pad; 23. Inner area; 24. Fixed pad; 25. Laser chip; 251. Connecting pad; 26. Gold wire; 3. Light-transmitting layer.

[0039] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0041] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0042] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present application, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme that satisfies both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in the field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by this application.

[0043] The power of existing LED lighting products does not exceed 200W, and the light output efficiency is 100-120lm / W, which is difficult to meet the use needs of the high-power and high-lumen market, especially in some large-area application scenarios, such as stadiums, ports, docks, high-pole lighting and other fields. In view of this, the application proposes a laser chip light source to solve the problems of low power and low light output efficiency of existing LED lighting products.

[0044] See also Figures 1 to 4 In one embodiment of the present application, the laser chip light source includes: a substrate 1, at least one light-emitting unit 2, and a light-transmitting layer 3, wherein the substrate 1 has a front side and a back side opposite to each other, and the front side is used to correspond to the light-emitting side; a plurality of the light-emitting units 2 are arranged on the front side of the substrate 1, and each of the light-emitting units 2 includes a pad and a laser chip 25 arranged in sequence in a direction away from the front side of the substrate 1, and in each of the light-emitting units 2, the pad includes a circuit pad and a fixed pad 24, and the laser chip 25 is fixed to the fixed pad 24 and electrically connected to the circuit pad; the light-transmitting layer 3 is wrapped on the corresponding laser chip 25 or covers the plurality of laser chips 25, so as to correspond to the first packaging state or the second packaging state;

[0045] Among them, see Figure 1 , when in the first packaging state, there are multiple light-transmitting layers 3, and the multiple light-transmitting layers 3 are wrapped on multiple corresponding laser chips 25, and the raw materials for preparing the light-transmitting layers 3 include epoxy resin AB glue, hollow glass microbeads and phosphors;

[0046] See also Figure 2 When in the second packaging state, the light-transmitting layer 3 is in a plate shape, used to cover the plurality of laser chips 25, and the raw materials for preparing the light-transmitting layer 3 include hollow alumina balls, fluorescent materials and a binder.

[0047] In the technical solution of the present application, when the circuit pad is connected to the power supply, the laser chip 25 emits a blue parallel light beam of 450 to 460 nm, and the blue parallel light beam is irradiated to the light-transmitting layer 3. When in the first packaging state, the phosphor in the light-transmitting layer 3 absorbs part of the blue light and then emits yellow light. The yellow light and the blue light complement each other to form white light. Due to its special structure and refractive index, the hollow glass microbeads can effectively scatter the incident light. The hollow glass microbeads form a scattering center, so that the light is more evenly distributed in multiple directions, which can not only make the phosphor and the blue light more fully contact, but also make the light emit at a larger angle. The combination of hollow glass microbeads and phosphors can adjust the color of the light and the emission angle of the light, effectively improving the light output efficiency. The laser chip 25 can work under high-power conditions and can be better applied to the needs of the high-power and high-lumen lighting market.

[0048] When in the second packaging state, the fluorescent component in the light-transmitting layer 3 absorbs part of the blue light and emits yellow light. The yellow light complements the blue light to form white light. After high-temperature sintering, the hollow alumina spheres have a special structure and have better scattering properties for light. The hollow alumina spheres form scattering centers, so that the light is more evenly distributed in multiple directions, which can not only make the fluorescent component and the blue light more fully contact, but also make the light emitted at a larger angle. The hollow alumina spheres and the fluorescent components can adjust the color of the light and the emission angle of the light, effectively improving the light extraction efficiency. The laser chip 25 can work under high-power conditions and can be better applied to the needs of the high-power and high-lumen lighting market.

[0049] It can be understood that the circuit pad and the fixing pad 24 are both arranged on the front side of the substrate 1 .

[0050] In an embodiment of the present application, when in the first packaging state, the light-transmitting layer 3 includes the following raw materials in parts by weight: 80 to 91 parts of epoxy resin AB glue and 10 to 21 parts of powder; wherein the powder includes hollow glass beads and fluorescent powder, and the weight ratio of the hollow glass beads to the fluorescent powder is (22 to 26): (4 to 8); the particle size of the hollow glass beads is 30 to 70 μm, and the particle size of the fluorescent powder is 1 to 20 μm.

[0051] In the technical solution of the present application, epoxy resin AB glue, hollow glass microspheres and phosphor powder are used in a specific ratio to form a packaging slurry, and the slurry is wrapped on the laser chip 25 by dispensing or molding. After the slurry is cured, a light-transmitting layer 3 in the shape of a bulb or a hemisphere is formed. Figure 6 .

[0052] It should be noted that the chemical composition of hollow glass microspheres includes: SiO2 55-65wt%, Al2O3 26-35wt%, MgO 1-2wt%, Fe2O3 1-5wt%, TiO2 0.5-2wt%, C 0.01-2wt%, and 0.5-4wt% of Na2O and K2O, where wt% refers to the mass percentage. The specific gravity of hollow glass microspheres is 0.2-0.3g / cm 3 , with a specific surface area of ​​1 to 1.5 m 2 / g, light diffusion rate is 80-88%. Phosphors include YAG:Ce 3+ Fluorescent powder. The raw material of epoxy resin AB glue is JL-510AB produced by Polyli Adhesive. When using, epoxy resin A glue and epoxy resin B glue are mixed in a mass ratio of 1:1 to form epoxy resin AB glue.

[0053] In an embodiment of the present application, when in the second packaging state, the light-transmitting layer 3 includes the following raw materials in parts by weight: 40 to 60 parts of powder, 0.2 to 0.3 parts of sintering modifier, 7 to 8 parts of sintering aid, 15 to 25 parts of binder, 20 to 30 parts of deionized water, 1 to 2 parts of dispersant, 0.6 to 1.2 parts of plasticizer, and 0.2 to 0.6 parts of defoaming agent; wherein the powder includes hollow alumina balls, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the hollow alumina balls, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58 to 82): (10 to 12): (5 to 8): (0.05 to 0.15): (0.04 to 0.07): (0.20 to 0.30).

[0054] In the technical solution of the present application, powder, sintering modifier, sintering aid, binder, deionized water, dispersant, plasticizer and defoamer are mixed to form a slurry, which is sintered to obtain a transparent YAG fluorescent composite crystal, i.e., the light-transmitting layer 3. Among them, the YAG fluorescent composite crystal has a fluorescent component.

[0055] It should be noted that the particle size of the hollow alumina sphere is 0.2-5 mm, and the bulk density is 0.5-1 g / cm 3 The sintering modifier includes CaO, the sintering aid includes ethyl quinate and MgO, the binder includes a PVA aqueous solution, the dispersant includes polyacrylamide, and the plasticizer includes polyethylene glycol.

[0056] In the embodiment of the present application, the thickness of the light-transmitting layer 3 is 0.1-0.4 mm. Controlling the thickness of the light-transmitting layer 3 to 0.1-0.4 mm can better ensure the light extraction efficiency.

[0057] In the embodiments of this application, see Figure 3 In each of the light-emitting units 2 , the circuit pads include a positive electrode pad 21 and a negative electrode pad 22 , the positive electrode of the laser chip 25 is electrically connected to the positive electrode pad 21 through a gold wire 26 , and the negative electrode is electrically connected to the negative electrode pad 22 through a gold wire 26 .

[0058] By adopting the above technical solution, the positive electrode of the laser chip 25 is electrically connected to the positive electrode pad 21 through the gold wire 26, and the negative electrode of the laser chip 25 is electrically connected to the negative electrode pad 22 through the gold wire 26, which can better ensure the electrical connection between the laser chip 25 and the pad.

[0059] In the embodiments of this application, see Figure 7 Each of the light-emitting units 2 further includes a group of electrode terminals and a group of conductive holes, wherein the group of electrode terminals includes a positive electrode terminal 13 and a negative electrode terminal 14 disposed on the back of the substrate 1, and the group of conductive holes includes a positive electrode conductive hole 11 and a negative electrode conductive hole 12 penetrating the substrate 1;

[0060] In each of the light-emitting units 2 , the positive electrode pad 21 is electrically connected to the positive electrode terminal 13 through the positive electrode conductive hole 11 , and the negative electrode pad 22 is electrically connected to the negative electrode terminal 14 through the negative electrode conductive hole 12 .

[0061] By adopting the above technical solution, the positive electrode of the laser chip 25 is connected to the positive electrode pad 21 through the gold wire 26, the positive electrode pad 21 is connected to the positive terminal 13 through the positive conductive hole 11, the negative electrode of the laser chip 25 is connected to the negative electrode pad 22 through the gold wire 26, the negative electrode pad 22 is connected to the negative terminal 14 through the negative conductive hole 12, and the positive and negative terminals 14 can be connected to the power supply. In this way, the power supply can be provided to the laser chip 25 more stably.

[0062] In the embodiments of this application, see Figure 4 and Figure 5 In each of the light-emitting units 2, the positive electrode pad 21 and the negative electrode pad 22 define an inner area 23, the fixing pad 24 is arranged in the inner area 23, and the laser chip 25 is provided with a connecting pad 251 corresponding to the fixing pad 24 on a side close to the substrate 1.

[0063] By adopting the above technical solution, in each light-emitting unit 2, the positive electrode pad 21 and the negative electrode pad 22 define an inner peripheral area 23, and the fixed pad 24 is arranged in the inner peripheral area 23, so that the limited area of ​​the front side of the substrate 1 can be more fully utilized, and the laser chip 25 can be more stably fixed on the substrate 1. It should be noted that in each light-emitting unit 2, there are two fixed pads 24, one of which is arranged corresponding to the positive electrode pad 21, and the other fixed pad 24 is arranged corresponding to the negative electrode pad 22. It can be understood that there are also two connecting pads 251, and the two connecting pads 251 are arranged corresponding to the two fixing pads 24. When the laser chip 25 is fixed on the substrate 1, the connecting pads 251 on the laser chip 25 are aligned with the fixing pads 24 on the substrate 1, and eutectic welding is performed through a eutectic furnace, and the temperature of the eutectic furnace has at least one temperature zone between 300°C and 340°C. The eutectic furnace adopts nitrogen protection during the eutectic process, and the eutectic time is 15 to 30 minutes. After eutectic, the laser chip 25 is fixed on the substrate 1.

[0064] In the embodiment of the present application, the fixing pad 24 and the connecting pad 251 are made of gold-tin alloy.

[0065] By adopting the above technical solution, the gold-tin alloy solder has high strength, high thermal conductivity and good oxidation resistance. These characteristics enable the gold-tin alloy solder to maintain stable welding quality under high temperature and harsh environment, avoiding fatigue fracture caused by temperature cycle, so as to ensure that the laser chip 25 is fixed on the substrate 1 more stably.

[0066] In the embodiment of the present application, the laser chip 25 is a blue laser chip. The blue laser chip 25 has the characteristics of small size, high efficiency, and easy conversion to white light. The blue laser chip 25 is used in conjunction with the light-transmitting layer 3 to better achieve high power and high light extraction efficiency, so as to better meet the lighting needs of a large area.

[0067] In the embodiment of the present application, the plurality of light emitting units 2 are connected in series or in parallel. The plurality of laser chips 25 are connected in series or in parallel to better meet the diverse use requirements.

[0068] In an embodiment of the present application, the substrate 1 is selected from one of an aluminum oxide substrate, an aluminum nitride substrate and a sapphire substrate.

[0069] Performance Test Example 1

[0070] A method for preparing a laser chip light source in a first packaging state comprises the following steps:

[0071] S1. Preparation of packaging materials

[0072] (1) 21 g of hollow glass microspheres with an average particle size of 50 μm and 9 g of YAG:Ce with an average particle size of 15 μm were mixed. 3+ The phosphor (YAG-04 phosphor) is mixed and stirred to form a powder, wherein the chemical composition of the hollow glass microspheres includes: SiO2 61wt%, Al2O3 31.5wt%, MgO 1.5wt%, Fe2O3 3.5wt%, TiO2 1.25wt%, and the balance is Na2O and K2O, wherein wt% refers to the mass percentage; and the specific gravity of the hollow glass microspheres is 0.25g / cm 3 , with a specific surface area of ​​1.3m 2 / g, light diffusion rate is 85%;

[0073] (2) Mix epoxy resin A glue and epoxy resin B glue (JL-510AB of Polyli Adhesive) in a weight ratio of 1:1, stir thoroughly, and form epoxy resin AB glue;

[0074] (3) Take 16 g of powder and 84 g of epoxy resin AB glue, add 16 g of powder to 84 g of epoxy resin AB glue, stir thoroughly, and obtain a packaging material.

[0075] S2. Provide an aluminum nitride substrate on which 42 light-emitting units connected in series are arranged, wherein the laser chip in each light-emitting unit is a VCSEL blue laser chip.

[0076] S3. Wrap the packaging material obtained in step S1 on the laser chip in each light-emitting unit in step S2 by dispensing. After the packaging material is cured, a hemispherical light-transmitting layer is formed to obtain a laser chip light source, wherein the thickness of the light-transmitting layer is 0.1 mm.

[0077] Performance Test Example 2

[0078] A method for preparing a laser chip light source in a second packaging state comprises the following steps:

[0079] S1. Preparation of powder

[0080] 65g of hollow alumina balls, 11g of Al2O3, 7g of Y2O3, 0.1g of CeO2, 0.05g of ZnO and 0.25g of ZrO2 were mixed, stirred and fully mixed to obtain a powder. The chemical composition of the hollow alumina balls includes Al2O3, and the mass percentage of Al2O3 is ≥99wt%, the particle size of the hollow alumina balls is 0.2-0.5mm, and the bulk density is 0.95g / cm 3; The purity of Al2O3, Y2O3, CeO2, ZnO and ZrO2 is 99.99%, the average particle size of Al2O3 is 0.8μm, the average particle size of Y2O3 and CeO2 is 2μm, and the average particle size of ZnO and ZrO2 is 0.5μm.

[0081] S2. Preparation of binder

[0082] PVA was dissolved in deionized water, stirred, and fully mixed to form a 15.0 wt % PVA aqueous solution, wherein wt % refers to the mass percentage, and the polymerization degree of PVA is 1750±50.

[0083] S3, add 41g of the powder obtained in step S1, 24g of deionized water, 0.26g of sintering modifier CaO, 7.5g of sintering aid, and 1.6g of polyacrylamide dispersant into a ball mill, and disperse by ball milling at a speed of 150rpm for 20h, add 20g of the PVA aqueous solution obtained in step S2, 1g of polyethylene glycol (PEG-400) plasticizer, and 0.4g of polypropylene glycol (molecular weight 1200) defoamer into the ball mill, and continue to ball mill at a speed of 150rpm for 22h to form a slurry. Among them, the polyacrylamide is a cationic polyacrylamide with a molecular weight of 12 million; the sintering aid includes ethyl quinate and MgO, and the mass ratio of ethyl quinate to MgO is 10:1.

[0084] S4. Degas the slurry obtained in step S3 under a vacuum degree of 0.08 MPa for 5 minutes, place the degassing slurry on a casting machine for casting, the casting speed is 10 mm / min, the cast green sheet enters a drying chamber for drying treatment, the drying temperature is divided into three stages, the first stage temperature is 50°C, the second stage temperature is 90°C, and the third stage temperature is 70°C, to obtain a cast green sheet with a thickness of 0.4 mm.

[0085] S5. After vacuum-sealing the cast green sheet obtained in step S4, place it in a warm isostatic press for pressurization to increase density. During the warm isostatic pressing treatment, the temperature is 60° C., the pressure is 120 MPa, and the time is 5 min. The green sheet is pre-cut on a pre-cutting machine to obtain a green sheet.

[0086] S6. Place the green sheet obtained in step S5 in a muffle furnace for heating treatment to remove binder and form a green sheet. During the heating treatment, the temperature is increased to 600° C. at a heating rate of 0.5° C. / min and kept at this temperature for 8 hours.

[0087] S7. The green blank obtained in step S6 is vacuum sintered at 1730° C. for 30 h, annealed in air at 1400° C. for 20 h, and taken out to obtain a transparent YAG fluorescent complex phase crystal.

[0088] S8. Provide an aluminum nitride substrate on which 42 light-emitting units connected in series are arranged, wherein the laser chip in each light-emitting unit is a VCSEL blue laser chip.

[0089] S9. Cover the YAG fluorescent complex phase crystal obtained in step S7 on the laser chip in each light-emitting unit in step S8 by gluing to obtain a laser chip light source, wherein the length and width of the YAG fluorescent complex phase crystal are adapted to the size of the substrate.

[0090] Using a remote integrating sphere, the luminous flux of the laser chip light source in performance test example 1 and performance test example 2 was measured under the conditions of voltage of 40V and current of 0.3A, and the light extraction efficiency was obtained by the luminous flux and power. The light extraction efficiency = (luminous flux / power) × 100%, where power = voltage × current. It was measured that the light extraction efficiency of performance test example 1 was 283.2lm / W; the light extraction efficiency of performance test example 2 was 291.1lm / W.

[0091] The above description is only an exemplary embodiment of the present application and does not limit the patent scope of the present application. All equivalent structural changes made by using the contents of the present application specification and drawings under the technical concept of the present application, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present application.

Claims

1. A laser chip light source, characterized in that: include: A substrate having a front side and a back side opposite to each other, wherein the front side is arranged corresponding to the light emitting side; At least one light-emitting unit is disposed on the front side of the substrate, each of the light-emitting units comprises a pad and a laser chip disposed in sequence in a direction away from the front side of the substrate, and in each of the light-emitting units, the pad comprises a circuit pad and a fixed pad, the laser chip is fixed to the fixed pad and electrically connected to the circuit pad; and, A light-transmitting layer, wrapped on the corresponding laser chip or covering a plurality of the laser chips, so as to have a first packaging state or a second packaging state; Wherein, in the first packaging state, there are multiple light-transmitting layers, and the multiple light-transmitting layers are wrapped on multiple corresponding laser chips, and the preparation materials of the light-transmitting layers include epoxy resin AB glue, hollow glass microbeads and fluorescent powder; In the second packaging state, the light-transmitting layer is in a plate shape, used to cover the plurality of laser chips, and the raw materials for preparing the light-transmitting layer include hollow alumina balls, fluorescent materials and a binder.

2. The laser chip light source according to claim 1, characterized in that: When in the first packaging state, the light-transmitting layer includes the following raw materials in parts by weight: 80 to 91 parts of epoxy resin AB glue and 10 to 21 parts of powder; The powder material includes hollow glass microspheres and fluorescent powder, and the weight ratio of the hollow glass microspheres to the fluorescent powder is (22-26): (4-8); The particle size of the hollow glass microspheres is 30 to 70 μm, and the particle size of the phosphor is 1 to 20 μm.

3. The laser chip light source according to claim 1, characterized in that: When in the second packaging state, the light-transmitting layer includes the following raw materials in parts by weight: 40-60 parts of powder, 0.2-0.3 parts of sintering modifier, 7-8 parts of sintering aid, 15-25 parts of binder, 20-30 parts of deionized water, 1-2 parts of dispersant, 0.6-1.2 parts of plasticizer, and 0.2-0.6 parts of defoaming agent; Wherein, the powder includes hollow alumina balls, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the hollow alumina balls, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58-82): (10-12): (5-8): (0.05-0.15): (0.04-0.07): (0.20-0.30).

4. The laser chip light source according to claim 1, characterized in that: The thickness of the light-transmitting layer is 0.1-0.4 mm.

5. The laser chip light source according to claim 1, characterized in that: In each of the light-emitting units, the circuit pads include a positive electrode pad and a negative electrode pad, the positive electrode of the laser chip is electrically connected to the positive electrode pad via a gold wire, and the negative electrode is electrically connected to the negative electrode pad via a gold wire.

6. The laser chip light source according to claim 5, characterized in that: Each of the light-emitting units further comprises a group of electrode terminals and a group of conductive holes, wherein the group of electrode terminals comprises a positive electrode terminal and a negative electrode terminal disposed on the back side of the substrate, and the group of conductive holes comprises a positive electrode conductive hole and a negative electrode conductive hole penetrating the substrate; In each of the light-emitting units, the positive electrode pad is electrically connected to the positive electrode terminal through the positive electrode conductive hole, and the negative electrode pad is electrically connected to the negative electrode terminal through the negative electrode conductive hole.

7. The laser chip light source according to claim 5, characterized in that: In each of the light-emitting units, the positive electrode pad and the negative electrode pad define an inner region, the fixing pad is arranged in the inner region, and the laser chip is provided with a connecting pad corresponding to the fixing pad on a side close to the substrate.

8. The laser chip light source according to claim 7, characterized in that: The fixing pad and the connecting pad are made of gold-tin alloy.

9. The laser chip light source according to claim 1, characterized in that: The laser chip is a blue laser chip; and / or, The plurality of light emitting units are connected in series or in parallel.

10. The laser chip light source according to claim 1, characterized in that: The substrate is selected from one of an aluminum oxide substrate, an aluminum nitride substrate and a sapphire substrate.

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