Evaporation source and evaporation method

Abstract

The invention discloses an evaporation source and an evaporation method, the evaporation source comprises a crucible body and a crucible cover plate, the crucible cover plate is arranged at an end opening of the crucible body, and a first separator is arranged on the crucible body or the crucible cover plate to divide an accommodating cavity for accommodating a film material on the crucible body into an impurity removal area and an evaporation area which are communicated with each other; the crucible cover plate is provided with a feeding port and an evaporation port, the feeding port communicates with the impurity removal area so that the film material can enter the containing cavity and guide impurities in the film material to be evaporated and then discharged from the impurity removal area, and the evaporation port communicates with the evaporation area so that the impurity-removed film material can be guided to be deposited on the base material. Impurities in the film material are evaporated in the impurity removal area and then discharged from the feeding port, the film material subjected to impurity removal is evaporated in the evaporation area and is sprayed out and deposited on the base material under the guidance of the evaporation port, and the situation that the impurities in the film material splash to affect the evaporation effect when the evaporation source is used for evaporation is avoided; in addition, due to the arrangement of the feeding port, evaporated impurities can be discharged, and continuous supplement of the film materials is facilitated.

Description

Technical Field

[0001] The present invention relates to the field of evaporation technology, and in particular to an evaporation source and an evaporation method. Background Art

[0002] Vacuum evaporation, or evaporation for short, refers to a process in which a coating material (or film material) is evaporated and vaporized by a certain heating evaporation method under vacuum conditions, and the particles fly to the surface of the substrate (such as polymer materials) and condense into a film. Evaporation is an earlier and more widely used vapor deposition technology, with the advantages of simple film formation, high film purity and density, and unique film structure and performance.

[0003] In the prior art, a crucible or an evaporation boat is used as an evaporation source. The crucible includes a crucible body and a crucible cover arranged on the crucible body, and a nozzle is arranged on the crucible cover. When a crucible is used for evaporation, the film material is generally placed in the crucible body in advance, and then the crucible cover is covered. The film material is vaporized in the crucible body by heating and sprayed out from the nozzle on the crucible cover and deposited on the substrate to realize the evaporation process. However, since the crucible cover is only provided with a nozzle for spraying the film material, if the substrate size is large or the film layer to be evaporated is thick, it is necessary to reopen the crucible cover to add the film material to the crucible body, and continuous production cannot be achieved, which will reduce production efficiency. Evaporation by an evaporation boat also has certain problems. Although the evaporation boat adopts a wire feeding method, which can solve the problem of continuous production, the evaporation boat is arranged horizontally and without shielding. Impurities will splash more violently when evaporated in the evaporation boat than when evaporated in the crucible.

[0004] Therefore the prior art still needs to be improved and enhanced. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide an evaporation source and an evaporation method, aiming to solve the problem of poor evaporation effect of the evaporation source in the prior art.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] An evaporation source comprises a crucible pot body and a crucible cover plate, wherein the crucible cover plate is arranged at the end opening of the crucible pot body, and a first partition is arranged on the crucible pot body or the crucible cover plate to separate a containing cavity on the crucible pot body for containing film material into a connected impurity removal area and a vapor deposition area, and the crucible cover plate is provided with a feed inlet and a vapor deposition inlet, wherein the feed inlet is communicated with the impurity removal area so that the film material enters the containing cavity and guides impurities in the film material to evaporate and then be discharged from the impurity removal area, and the vapor deposition inlet is communicated with the vapor deposition area so as to guide the film material after impurity removal to be deposited on a substrate.

[0008] A first channel is defined between the first partition and the bottom of the crucible pot body for connecting the impurity removal area and the evaporation area.

[0009] A second partition is provided in the crucible pot body to divide the impurity removal zone into a purification zone and a transition zone, and a second channel is defined between the second partition and the bottom of the crucible body to connect the purification zone and the transition zone; a third channel is defined between the second partition and the crucible cover plate to connect the upper part of the transition zone with the feed inlet.

[0010] The upper end of the second partition is higher than the end opening of the crucible pot body.

[0011] The feed inlet is arranged on the peripheral side of the crucible cover plate, so that impurities in the film material can be discharged after evaporation and the film material can contact the crucible cover plate after melting and flow back into the containing cavity; the evaporation port is arranged directly above the evaporation area.

[0012] The opening size of the evaporation port gradually decreases from the lower end surface of the crucible cover to the upper end surface of the crucible cover.

[0013] The crucible cover plate comprises a cover plate end and a support portion arranged at the lower end of the cover plate end, and a horizontal end surface is arranged on the support portion so that the crucible cover plate is supported at the end opening of the crucible pot body.

[0014] The first partition is detachably arranged on the crucible pot body or the crucible cover plate to adjust the size of the first channel.

[0015] The temperature of the purification zone is lower than the evaporation temperature of the film material and higher than the melting temperature of the film material; the temperature of the evaporation zone is higher than the temperature of the transition zone; and the temperature of the transition zone is not lower than the evaporation temperature of the film material.

[0016] A vapor deposition method using the evaporation source as described above comprises the following steps:

[0017] The crucible pot body is heated and the film material is placed in the impurity removal area from the feed inlet, so that the impurities in the film material are vaporized and discharged from the feed inlet;

[0018] After the film material is cleaned and melted, it enters the evaporation zone to evaporate and is ejected from the evaporation port to be deposited on the substrate.

[0019] Compared with the prior art, the present invention provides an evaporation source and an evaporation method, wherein the evaporation source includes a crucible pot body and a crucible cover plate, the crucible cover plate is arranged at the end opening of the crucible pot body, the crucible pot body or the crucible cover plate is provided with a first partition to separate the accommodating cavity on the crucible pot body for accommodating the film material into a connected impurity removal area and an evaporation area, the crucible cover plate is provided with a feed inlet and an evaporation inlet, the feed inlet is connected with the impurity removal area to allow the film material to enter the accommodating cavity and guide the impurities in the film material to evaporate and then be discharged from the impurity removal area, the evaporation inlet is connected with the evaporation area to guide the impurity-free film material to be deposited on the substrate. In the present application, the accommodating cavity of the crucible pot body is divided into an impurity removal area and an evaporation area by a first partition, after the film material is placed into the impurity removal area from the feed inlet, the impurities in the film material evaporate in the impurity removal area and then are discharged from the feed inlet, the impurity-free film material evaporates in the evaporation area and is ejected and deposited on the substrate under the guidance of the evaporation inlet. The present application removes impurities from the film material before evaporation to prevent impurities in the film material from splashing during evaporation from the evaporation source and affecting the evaporation effect; in addition, the setting of the feed port can not only discharge the impurities after evaporation, but also facilitate the continuous replenishment of the film material to ensure the continuity of the evaporation process. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of the structure in which the first partition and the crucible pot body are integrated into one body and the crucible end cover in the linear evaporation source provided by the present invention.

[0021] Figure 2 for Figure 1 Cross-sectional view of the corresponding structure after assembly.

[0022] Figure 3 This is a schematic structural diagram of a linear evaporation source provided by the present invention in which a first partition is detachably arranged on a crucible cover plate and a second partition is integrally formed with the crucible pot body.

[0023] Figure 4 for Figure 1 Cross-sectional view of the corresponding structure after assembly.

[0024] Figure 5 This is a schematic structural diagram of a linear evaporation source provided by the present invention in which a first partition and a crucible cover plate are integrally formed.

[0025] Figure 6 This is a schematic structural diagram of a linear evaporation source provided by the present invention in which a first partition and a second partition are detachably arranged on a crucible pot body. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0027] It should be noted that when a component is referred to as being "mounted on", "fixed on" or "disposed on" another component, it may be directly on the other component or there may be a central component at the same time. When a component is referred to as being "connected to" another component, it may be directly connected to the other component or there may be a central component at the same time.

[0028] It should also be noted that the directional terms such as left, right, up, and down in the embodiments of the present invention are merely relative concepts or are based on the normal use status of the product and should not be considered as restrictive.

[0029] Vacuum evaporation, or evaporation for short, refers to a process in which a coating material (or film material) is evaporated and vaporized by a certain heating evaporation method under vacuum conditions, and the particles fly to the surface of the substrate (such as polymer materials) and condense into a film. Evaporation is an earlier and more widely used vapor deposition technology, with the advantages of simple film formation, high film purity and density, and unique film structure and performance.

[0030] In the prior art, a crucible or an evaporation boat is used as an evaporation source. The crucible includes a crucible body and a crucible cover arranged on the crucible body. The crucible cover is provided with a nozzle. In the crucible evaporation method, the film material is generally placed in the crucible body in advance, and then the crucible cover is covered. The film material is vaporized in the crucible body by heating and sprayed out from the nozzle on the crucible cover and deposited on the substrate to realize the evaporation process. However, since the crucible cover is only provided with a nozzle for spraying the film material, if the substrate size is large or the film layer to be evaporated is thick, it is necessary to reopen the crucible cover and inject the film into the crucible body. Adding film material cannot achieve continuous production and will reduce production efficiency. In addition, the nozzle on the crucible cover is in the shape of a hole. Due to the small opening of the nozzle, on the one hand, it will affect the uniformity of the deposition of the film material on the substrate. On the other hand, the film material is ejected from the nozzle with large kinetic energy and high temperature. After contacting the substrate, the film material may burn through the substrate. There are also certain problems with evaporation by evaporation boat. Although the evaporation boat adopts a wire feeding method, which can solve the problem of continuous production, the evaporation boat is set horizontally and without shielding. Impurities will splash more violently when evaporated in the evaporation boat than when evaporated in the crucible.

[0031] In view of the above problems, this application provides an evaporation source, please refer to Figure 1-Figure 6, comprising a crucible pot body 1 and a crucible cover plate 2, the crucible cover plate 2 being arranged at the end opening of the crucible pot body 1, a first partition 11 being arranged on the crucible pot body 1 or the crucible cover plate 2 to separate a containing cavity (not marked in the figure) on the crucible pot body 1 for containing film material into a connected de-impurity zone 3 and a vapor deposition zone 4, a feed inlet 21 and a vapor deposition port 22 being arranged on the crucible cover plate 2, the feed inlet 21 being connected with the de-impurity zone 3 to allow the film material to enter the containing cavity and guide the impurities in the film material to evaporate and be discharged from the de-impurity zone 3, the vapor deposition port 22 being connected with the vapor deposition zone 4 to guide the de-impurity film material to be deposited on the substrate. In the present application, the first partition 11 is used to divide the accommodating cavity of the crucible pot body 1 into a de-impurity zone 3 and a vapor deposition zone 4. After the film material is placed into the de-impurity zone 3 from the feed port 21, the impurities in the film material evaporate in the de-impurity zone 3 and then discharged from the feed port 21. The de-impurity film material evaporates in the vapor deposition zone 4 and is ejected and deposited on the substrate under the guidance of the vapor deposition port 22. The present application removes impurities from the film material before evaporation to prevent impurities in the film material from splashing during vapor deposition from the evaporation source and affecting the vapor deposition effect; in addition, the setting of the feed port 21 can not only discharge the evaporated impurities, but also facilitate the continuous replenishment of the film material to ensure the continuity of the vapor deposition process.

[0032] It should be noted that the film material in the present application is a metal material. Since the capacity of the accommodating cavity of the crucible pot body 1 is limited, for a larger substrate, the evaporation source can be used in conjunction with a feeding device. The discharge port of the feeding device is connected to the feed port 21 of the evaporation source. The feeding device in the prior art is a device for continuously conveying metal particles. The feeding device conveys the metal particles to the impurity removal zone 3 through the feed port 21. Since the evaporation source is in a high temperature and high pressure state, when the film material enters the impurity removal zone 3 and falls to the bottom of the crucible pot body 1, impurities are It will be discharged from the feed port 21 after being vaporized at high temperature in the impurity removal zone 3; by arranging the feed port 21 on the crucible cover plate 2, the film material can be continuously transported to the crucible pot body 1, and the vaporized impurities are discharged from the feed port 21, and the impurities after impurity removal are evaporated in the evaporation zone 4 and deposited on the substrate under the guidance of the evaporation port 22; the evaporation source of the present application can be used to remove impurities from the film material before evaporation to improve the purity of the film material, which is beneficial to improve the bonding strength between the film material and the substrate and ensure the deposition effect of the film material on the substrate.

[0033] Furthermore, a first channel 51 is defined between the first partition 11 and the bottom of the crucible pot body 1, so as to connect the impurity removal zone 3 and the evaporation zone 4. In the present application, the film material enters the impurity removal zone 3 through the feed port 21, and the impurities in the film material evaporate in the impurity removal zone 3 and are discharged from the feed port 21, and the impurity-removed film material enters the evaporation zone 4 from the impurity removal zone 3; the first channel 51 is located at the bottom of the accommodating cavity, so that the film material evaporated in the evaporation zone 4 is impurity-removed, which improves the purity of the film material during evaporation, and is conducive to a closer combination of the film material and the substrate.

[0034] In the first embodiment of the present application, the first partition 11 can be an integrally formed structure with the crucible pot body 1; specifically, the first partition 11 is longitudinally arranged in the crucible pot body 1, and the longitudinal side walls of the first partition 11 are connected to the inner wall of the crucible pot body 1, and there is a height difference between the lower end of the first partition 11 and the bottom of the crucible pot body 1, and the height difference between the two is the first channel 51 connecting the evaporation zone 4 of the impurity removal zone 3. Of course, alternatively, the lower end of the first partition 11 contacts the bottom of the crucible pot body 1, but the first partition 11 is provided with a plurality of conducting holes 13 connecting the impurity removal zone 3 and the evaporation zone 4, the lower end of the conducting hole 13 is an opening, and the conducting hole 13 is the first channel 51. The shape of the conducting hole 13 can be set to be square, and the lower end of the conducting hole 13 is flush with the bottom of the crucible pot body 1, which will not affect the flow of the film material after melting. It should be noted that the height difference between the lower end of the first partition 11 and the crucible pot body 1, the number of the conductive holes 13 on the first partition 11, the size of the conductive holes 13, the spacing between adjacent conductive holes 13 and other parameters can be adaptively selected according to the material of the film material and the capacity of the crucible pot body 1, and this application does not limit them here. Figure 1 and Figure 2 In the first embodiment, the first partition 11 and the second partition 12 are both integrally formed with the crucible body 1 .

[0035] In the second embodiment of the present application, Figure 5 As shown in , the first partition 11 can be an integrally formed structure with the crucible cover plate 2; specifically, the lower end surface of the crucible cover plate 2 is connected to the upper end surface of the first partition 11. When the crucible cover plate 2 is covered on the crucible pot body 1, the two side walls of the first partition 11 will contact the inner wall of the crucible pot body 1 to divide the accommodating cavity of the crucible pot body 1 into the impurity removal area 3 and the evaporation area 4. As in the first embodiment, the lower end of the first partition 11 can be made to have a height difference with the bottom of the crucible pot body 1, that is, the first channel 51; the lower end of the first partition 11 can also be made to contact the bottom of the crucible pot body 1, but a conducting hole 13 is set on the first partition 11. The specific principle and structure have been explained in the first embodiment and will not be repeated here.

[0036] Furthermore, a second partition 12 is provided in the crucible pot body 1 to separate the impurity removal zone 3 into a purification zone 31 and a transition zone 32; a second channel 52 is defined between the second partition 12 and the bottom of the crucible pot body 1 to connect the purification zone 31 and the transition zone 32; a third channel 53 is defined between the second partition 12 and the crucible cover plate 2 to enable the upper part of the transition zone 32 to communicate with the feed port 21.

[0037] In the present application, the second partition 12 can be an integral structure with the crucible pot body 1, or can be detachably arranged in the crucible pot body 1; if the second partition 12 is to be detachably arranged in the crucible pot body 1, a guide groove 14 can be arranged on the inner wall of the crucible pot body 1, and the details can be referred to later. The first partition 11 is assembled in the crucible pot body 1 using the guide groove 14, which is the same as that described later, and will not be repeated here. It should be noted that, because there is a height difference between the second partition 12 and the bottom of the crucible pot body 1 and the lower end surface of the crucible cover plate 2, the two guide grooves 14 on the crucible pot body 1, one of which passes through the side wall of the crucible pot body 1, and the other guide groove 14 does not pass through the side wall of the crucible pot body 1. One end of the partition is inserted from the guide groove 14 that passes through one side of the crucible pot body 1 and the inserted end is placed in the guide groove 14 that does not pass through the side wall of the crucible pot body 1, so that the second partition 12 can be installed. In the present application, the accommodating chamber is divided into a connected impurity removal zone 3 and a vapor deposition zone 4 by a first partition 11. This design allows the film material to be preliminarily purified in the impurity removal zone 3. After impurities are removed, the film material enters the vapor deposition zone 4 for vapor deposition. Further, the second partition 12 divides the impurity removal zone 3 into a purification zone 31 and a transition zone 32, which helps to more efficiently remove impurities in the film material in the purification zone 31, and buffers through the transition zone 32 to ensure that the film material smoothly enters the vapor deposition zone 4, which is beneficial to improving the vapor deposition efficiency.

[0038] Furthermore, the temperature of the purification zone 31 is lower than the evaporation temperature of the film material and higher than the melting temperature of the film material; the temperature of the evaporation zone is higher than the temperature of the transition zone 32; and the temperature of the transition zone 32 is not lower than the evaporation temperature of the film material.

[0039] In the present application, the film material enters the purification zone 31, and the temperature of the purification zone 31 is lower than the evaporation temperature of the film material and higher than the melting temperature of the film material. Then, the impurities in the film material are vaporized and discharged from the feed port 21. The film material after impurities removal is melted into molten metal and flows into the transition zone 32 and the evaporation zone 4 at the lower part of the accommodating cavity. If a large amount of film material is continuously fed into the feed port 21, the molten metal is in dynamic equilibrium in the purification zone 31, the transition zone 32 and the evaporation zone 4. Since the temperatures of the purification zone 31, the transition zone 32 and the evaporation zone 4 are not the same, the film material in the transition zone 32 is subjected to secondary impurities removal and part of the melted film material evaporates and refluxes after encountering the crucible cover plate 2. The film material in the evaporation zone 4 evaporates and is ejected from the evaporation port 22 and deposited on the substrate. It should be noted that in order to make the temperatures of the purification zone 31, transition zone 32 and evaporation zone 4 different, separate heating wires can be set in the three corresponding areas at the bottom of the crucible pot body 1. Of course, an electrically heated graphite block can also be set at the bottom of the crucible pot body 1 to heat the three areas separately or other heating methods can be used.

[0040] Furthermore, the feed port 21 is arranged on the peripheral side of the crucible cover plate 2 so that impurities in the film material can be discharged after evaporation and the film material can contact the crucible cover plate 2 after melting and flow back into the containing cavity; the evaporation port 22 is arranged directly above the evaporation area 4.

[0041] In the present application, after the film material enters the purification zone 31 through the feed port 21, because the temperature of the purification zone 31 is greater than the melting temperature of the film material and lower than the evaporation temperature of the film material, the impurities in the film material evaporate and are discharged from the feed port 21, and the film material in the purification zone 31 melts into a liquid state, and then the film material that has been decontaminated once enters the transition zone 32 through the second channel 52. Because the temperature of the transition zone 32 is not lower than the evaporation temperature of the film material, the film material in the transition zone 32 will be decontaminated for a second time, and the impurities will be discharged through the third channel 53 and the feed port 21, further preventing the influence of impurities on the coating. At the same time, part of the film material will vaporize and condense at the lower end of the crucible cover plate 2 after encountering the crucible cover plate 2, and the condensed film material will flow back to the purification zone 31; because the temperature of the evaporation zone 4 is greater than the temperature of the transition zone 32, after the film material enters the evaporation zone 4 through the transition zone 32, it will evaporate in the evaporation zone 4 and be ejected from the evaporation port 22 and deposited on the substrate. In the present application, the substrate is arranged directly above the evaporation source, so the evaporation port 22 is arranged directly above the evaporation zone 4, that is, the evaporation port 22 is located at the end face of the crucible cover plate 2; the feed port 21 is not arranged at the end face of the crucible cover plate 2, on the one hand, to avoid the film material from splashing onto the substrate along the feed port 21 when impurities evaporate after entering the de-impurity zone 3 to affect the evaporation effect, and on the other hand to avoid the film material from being ejected from the feed port 21 after evaporation in the transition zone 32 and unable to be effectively deposited on the preset surface of the substrate; the feed port 21 is arranged on the peripheral side of the crucible cover plate 2, so that the film material in the de-impurity zone 3 encounters the crucible cover plate 2 after vaporization and condenses on the lower end face of the crucible cover plate 2, and then flows back to the accommodating cavity, so as to reduce the loss caused by the evaporation of the film material in the transition zone 32, and improve the utilization rate of the film material.

[0042] Furthermore, the upper end of the second partition 12 is higher than the end opening of the crucible pot body 1. The advantage of such a setting is that, since the temperature of the transition zone 32 is greater than or equal to the evaporation temperature of the film material, the upper end of the second partition 12 is higher than the end opening of the crucible pot body 1 and is close to the lower end surface of the crucible cover plate 2, which minimizes the amount of film material discharged from the transition zone 32 through the third channel 53 and the feed inlet 21 after evaporation, which is conducive to the reflux of the condensed film material to the transition zone 32.

[0043] The opening size of the evaporation port 22 gradually decreases from the lower end surface of the crucible cover plate 2 to the upper end surface of the crucible cover plate 2. Figure 4As shown, in the present application, a chamfer is provided at the evaporation port 22. The setting of the chamfer makes the opening of the evaporation port 22 on the crucible cover plate 2 present a shape that is small at the top and high at the bottom, that is, the opening of the evaporation port 22 at the upper end surface of the crucible cover plate 2 is smaller than the opening at the lower end surface of the crucible cover plate 2; such a design can guide the film material when it is sprayed out at the evaporation port 22, so that the film material can be sprayed out from the evaporation port 22 more smoothly, reduce the eddy and turbulent phenomena in the film material spraying process, and improve the stability of evaporation. At the same time, the chamfer can also reduce the stress concentration phenomenon at the evaporation port 22 and increase the service life of the crucible cover plate 2; in addition, by changing the angle of the chamfered inclined surface, the speed and angle of the film material spraying can be optimized, and the uniformity of evaporation can be improved. In the present application, the evaporation port 22 is slender, and can be specifically set to be rectangular or waist-shaped. Compared with the existing method of setting the evaporation port 22 as a hole, the film material sprayed from the slender evaporation port 22 has a larger coverage area, and can form a coating on a larger area of ​​the substrate, thereby improving the uniformity of the coating, which is beneficial to improving the evaporation efficiency. At the same time, it also avoids the problem that the film material may burn through the substrate after being sprayed from the hole-shaped evaporation port.

[0044] Furthermore, the crucible cover plate 2 includes a cover plate end 23 and a support portion 24 disposed at the lower end of the cover plate end 23, and a horizontal end surface is disposed on the support portion 24 so that the crucible cover plate 2 is supported at the end opening of the crucible pot body 1. An unclosed annular cover portion 25 extends from the lower end of the support portion 24, and when the crucible cover plate 2 is covered on the crucible pot body 1, the horizontal end surface of the support portion 24 contacts the open end surface of the crucible pot body 1 to support the crucible cover plate 2 on the crucible pot body 1; the arrangement of the support portion 24, when the crucible cover plate 2 is supported on the crucible pot body 1, makes a height difference between the cover plate end 23 and the open end surface of the crucible pot body 1, thereby preventing the cover plate end 23 from sealing the opening of the crucible pot body 1, and only the support portion 24 and the cover portion 25 are provided with a feed port. 21, the accommodating chamber can be connected to the feeding device; if a common bottle cap is used as the crucible cover plate 2 to cover the crucible pot body 1, it is necessary to open an opening corresponding to the feed port 21 on the crucible pot body 1. Each time the crucible cover plate 2 is covered on the crucible pot body 1, it is necessary to align the feed port 21 with the opening on the crucible pot body 1, which is more troublesome. When the crucible cover plate 2 of the present application is covered on the crucible pot body 1, it is only necessary to place the feed port 21 on one side of the purification area 31, that is, to connect the feed port 21 with the purification area 31, which is more convenient to operate. The setting of the cover portion 25, on the one hand, increases the counterweight of the crucible cover plate 2, so that the crucible cover plate 2 can be placed on the crucible pot body 1 more stably, and on the other hand, it plays a limiting role to prevent the crucible cover plate 2 from sliding off the crucible pot body 1.

[0045] Furthermore, the first partition 11 is detachably disposed on the crucible pot body 1 or the crucible cover plate 2 to adjust the size of the first channel 51 .

[0046] In the third embodiment of the present application, the first separator 11 is detachably arranged on the crucible pot body 1 as an example for explanation. Specifically, two oppositely arranged guide grooves 14 are longitudinally arranged on the inner wall of the crucible pot body 1. The guide grooves 14 may or may not penetrate the side wall of the crucible pot body 1. The first separator 11 may be longitudinally inserted into the crucible pot body 1 along the guide grooves 14 to separate the accommodating cavity of the crucible pot body 1 into a de-mixing area 3 and a vapor deposition area 4. In this embodiment, the first separator 11 includes a mounting portion (not shown in the figure) that cooperates with the guide grooves 14 for mounting the first separator 11 and a partition portion (not shown in the figure) located at the lower end of the mounting portion. In order to make the size of the first channel 51 adjustable, different first separators may be inserted into the guide grooves 14. 11, to adapt to different evaporation requirements; different first partitions 11 differ in that their partitions are different. One way is to make a height difference between the lower end of the partition and the bottom of the crucible pot body 1, and to set partitions of different heights at the lower end of the mounting portion to change the height difference between the lower end of the partition and the bottom of the crucible pot body 1, thereby achieving a change in the size of the first channel 51. Another way is to make the lower end of the partition contact with the bottom of the crucible pot body 1, but the partition is provided with a plurality of conducting holes 13 connecting the de-doping area 3 and the evaporation area 4. The specific shape of the conducting holes 13 is the same as that in the first embodiment, and is not repeated here. Figure 6 The first partition 11 and the second partition 12 are inserted into the crucible body along the guide groove 14 .

[0047] In the fourth embodiment of the present application, the first partition 11 is detachably arranged on the crucible cover plate 2 as an example for explanation. Specifically, an insertion port 26 can be provided on the crucible cover plate 2, and the first partition 11 can be inserted into the crucible pot body 1, and the lower end of the first partition 11 is in contact with the bottom of the crucible pot body 1. When the crucible cover plate 2 is covered on the crucible pot body 1, the upper end of the first partition 11 is inserted into the insertion port 26, and the two side walls of the first partition 11 are in contact with the inner walls of the crucible pot body 1 and the crucible cover plate 2 to divide the accommodating chamber into the impurity removal area 3 and the evaporation area 4. Similarly, a conducting hole 13 is provided on the first partition 11, and the specific shape of the conducting hole 13 is the same as that in the first embodiment, which will not be repeated here. Figure 3 and Figure 4 The first partition 11 is detachably arranged on the crucible cover plate 2 .

[0048] The present application also provides a corresponding evaporation method using the evaporation source, comprising the following steps:

[0049] The crucible pot body is heated and the film material is placed in the impurity removal area from the feed inlet, so that the impurities in the film material are vaporized and discharged from the feed inlet;

[0050] After the film material is cleaned of impurities and melted, it enters the evaporation zone to evaporate and is ejected from the evaporation port to be deposited on the substrate. By using the evaporation source and evaporation method in this application, the film material is cleaned of impurities before evaporation of the film material, and the cleaned film material is ejected and deposited on the substrate, which reduces the influence of impurities in the film material on the positive effect during the evaporation process and improves the bonding strength between the film material and the substrate.

[0051] In summary, the present invention provides an evaporation source and an evaporation method, wherein the evaporation source includes a crucible pot body and a crucible cover plate, the crucible cover plate is arranged at the end opening of the crucible pot body, the crucible pot body or the crucible cover plate is provided with a first partition to separate the holding cavity on the crucible pot body for accommodating the film material into a connected impurity removal area and an evaporation area, the crucible cover plate is provided with a feed inlet and an evaporation port, the feed inlet is connected with the impurity removal area to allow the film material to enter the holding cavity and guide the impurities in the film material to evaporate and then be discharged from the impurity removal area, the evaporation port is connected with the evaporation area to guide the impurity-free film material to be deposited on the substrate. In the present application, the holding cavity of the crucible pot body is divided into an impurity removal area and an evaporation area by a first partition, after the film material is placed into the impurity removal area from the feed inlet, the impurities in the film material evaporate in the impurity removal area and then are discharged from the feed inlet, the impurity-free film material evaporates in the evaporation area and is ejected and deposited on the substrate under the guidance of the evaporation port. The present application removes impurities from the film material before evaporation to prevent impurities in the film material from splashing during evaporation from the evaporation source and affecting the evaporation effect; in addition, the setting of the feed port can not only discharge the impurities after evaporation, but also facilitate the continuous replenishment of the film material to ensure the continuity of the evaporation process.

[0052] It is understandable that those skilled in the art can make equivalent substitutions or changes based on the technical solution and inventive concept of the present invention, and all these changes or substitutions should fall within the protection scope of the claims attached to the present invention.

Claims

1. An evaporation source, characterized in that: It includes a crucible pot body and a crucible cover plate, the crucible cover plate is arranged at the end opening of the crucible pot body, the crucible pot body or the crucible cover plate is provided with a first partition to separate the containing cavity on the crucible pot body for containing the film material into a connected impurity removal area and a vapor deposition area, the crucible cover plate is provided with a feed port and a vapor deposition port, the feed port is connected with the impurity removal area to allow the film material to enter the containing cavity and guide the impurities in the film material to evaporate and then be discharged from the impurity removal area, the vapor deposition port is connected with the vapor deposition area to guide the film material after impurity removal to be deposited on the substrate.

2. The evaporation source according to claim 1, characterized in that: A first channel is defined between the first partition and the bottom of the crucible pot body for connecting the impurity removal area and the evaporation area.

3. The evaporation source according to claim 1, characterized in that: A second partition is provided in the crucible pot body to divide the impurity removal zone into a purification zone and a transition zone, and a second channel is defined between the second partition and the bottom of the crucible body to connect the purification zone and the transition zone; a third channel is defined between the second partition and the crucible cover plate to connect the upper part of the transition zone with the feed inlet.

4. The evaporation source according to claim 3, characterized in that: The upper end of the second partition is higher than the end opening of the crucible pot body.

5. The evaporation source according to claim 3, characterized in that: The feed inlet is arranged on the peripheral side of the crucible cover plate, so that impurities in the film material can be discharged after evaporation and the film material can contact the crucible cover plate after melting and flow back into the containing cavity; the evaporation port is arranged directly above the evaporation area.

6. The evaporation source according to claim 5, characterized in that: The opening size of the evaporation port gradually decreases from the lower end surface of the crucible cover to the upper end surface of the crucible cover.

7. The evaporation source according to claim 5, characterized in that: The crucible cover plate comprises a cover plate end and a support portion arranged at the lower end of the cover plate end, and a horizontal end surface is arranged on the support portion so that the crucible cover plate is supported at the end opening of the crucible pot body.

8. The evaporation source according to claim 2, characterized in that: The first partition is detachably arranged on the crucible pot body or the crucible cover plate to adjust the size of the first channel.

9. The evaporation source according to claim 3, characterized in that: The temperature of the purification zone is lower than the evaporation temperature of the film material and higher than the melting temperature of the film material; the temperature of the evaporation zone is higher than the temperature of the transition zone; and the temperature of the transition zone is not lower than the evaporation temperature of the film material.

10. An evaporation method using the evaporation source according to any one of claims 1 to 9, characterized in that: The following steps are involved: The crucible pot body is heated and the film material is placed in the impurity removal area from the feed inlet, so that the impurities in the film material are vaporized and discharged from the feed inlet; After the film material is cleaned and melted, it enters the evaporation zone to evaporate and is ejected from the evaporation port to be deposited on the substrate.

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