Electroplating device and photovoltaic cell production line

Abstract

The invention belongs to the technical field of electroplating, and discloses an electroplating device and a photovoltaic cell production line, the electroplating device comprises a carrier, a blocking piece, a plating solution box, an anode piece, a cathode electric brush and a recovery assembly, the carrier is provided with a containing groove, and the containing groove is used for containing a silicon wafer; a plating solution area is defined by the blocking piece; the plating solution box is arranged above the plating solution area, the plating solution box is used for containing plating solution, an opening is formed in the plating solution box, and the plating solution in the plating solution box can enter the plating solution area through the opening; the anode piece is electrically connected with the plating solution in the plating solution area; the cathode brush is arranged outside the plating solution area; the recycling assembly is used for recycling the plating solution in the plating solution area into the plating solution box; and the upper surface of the silicon wafer can be simultaneously contacted with the plating solution in the plating solution area and the cathode brush to form a conductive loop. The accommodating groove provides fixation and support for the silicon wafer, so that the fragmentation risk of the silicon wafer is effectively reduced; the contact position of the silicon wafer and the cathode brush is fixed and is static contact, so that the uniformity of the electroplating grid line is ensured; the barrier isolates the plating solution from the cathode brush and the non-plating area of the silicon wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of electroplating, and in particular to an electroplating device and a photovoltaic cell production line. Background Art

[0002] In order to reduce the production cost of photovoltaic cells, the thickness of silicon wafers used in the manufacture of photovoltaic cells is becoming thinner and thinner to reduce the cost of silicon wafers. The industry usually uses electroplated copper grid lines instead of silk-screened silver grid lines to reduce metallization costs.

[0003] In mainstream solar cells, the positive and negative grid lines of BC cells (back contact cells) are integrated on the back of the cell. There is no grid line blocking the front, so there is no need to consider the shading loss of the cell, and the passivation of the front and back can be taken into account. The photoelectric conversion efficiency is significantly improved compared to bifacial cells (such as PERC, TOPCON, HJT, etc.), especially when using copper electroplating. Due to the low metallization cost, the grid lines can be made denser to improve the carrier collection capacity, which can better exert the efficient power generation capacity of the BC cell.

[0004] Existing electroplating schemes are mainly divided into horizontal electroplating and vertical electroplating. Vertical electroplating usually uses a clamp to clamp the silicon wafer for power-on electroplating. Clamping will increase the risk of silicon wafer fragmentation. At the same time, the clamping point will affect the appearance of the battery and may cause damage to the passivation film of the battery cell. Horizontal electroplating usually uses rollers to transfer silicon wafers, but as the silicon wafers become thinner, roller transmission causes a higher risk of silicon wafer fragmentation. In addition, existing single-sided horizontal electroplating devices usually immerse one side of the silicon wafer in the plating solution for transmission, and the transmission and electroplating are carried out simultaneously. During the transmission of the silicon wafer, the cathode side switches the power connection position all the time, resulting in continuous changes in the power connection resistance on the back side, affecting the uniformity of the electroplated grid line. In addition, during the transmission process, the plating solution can easily contact the cathode side of the silicon wafer, resulting in electrolysis of the metal on the non-electroplated surface, or copper plating on the cathode brush, affecting product quality and production efficiency.

[0005] Therefore, there is an urgent need to provide an electroplating device and a photovoltaic cell production line to solve the above problems. Summary of the invention

[0006] The purpose of the present invention is to provide an electroplating device and a photovoltaic cell production line, which can reduce the risk of silicon wafer fragmentation, ensure the uniformity of electroplating grid lines, prevent the plating solution from contacting non-electroplating areas and cathode brushes, ensure product quality, and improve production efficiency.

[0007] To achieve this object, the present invention adopts the following technical solutions:

[0008] An electroplating device, comprising:

[0009] A carrier, wherein a receiving groove is provided on the carrier, and the receiving groove is used to receive the silicon wafer;

[0010] A blocking member, wherein the blocking member is arranged to enclose a plating solution area;

[0011] A plating liquid box, the plating liquid box is arranged above the plating liquid area, the plating liquid box is used to contain the plating liquid, and the plating liquid box is provided with an opening, and the plating liquid in the plating liquid box can enter the plating liquid area through the opening;

[0012] an anode member, the anode member being electrically connected to the plating solution in the plating solution area; a cathode brush, the cathode brush being arranged outside the plating solution area;

[0013] A recovery component, used for recovering the plating solution in the plating solution area into the plating solution box;

[0014] The upper surface of the silicon wafer can be in contact with the plating solution in the plating solution area and the cathode brush at the same time to form a conductive loop.

[0015] Furthermore, the anode member is a porous anode plate, the bottom of the plating solution box is penetrated to form the opening, the porous anode plate is arranged at the opening, and the plating solution passes through the porous anode plate into the plating solution area.

[0016] Furthermore, the electroplating device further comprises a water blocking member, wherein the water blocking member is arranged between the blocking member and the cathode brush to prevent the cathode brush from contacting the plating solution.

[0017] Furthermore, the water blocking component is a water blocking roller.

[0018] Furthermore, the surface of the water-blocking roller is coated with porous water-absorbing material.

[0019] Further, the depth of the receiving groove is not greater than the thickness of the silicon wafer; and / or,

[0020] The carrier is provided with a plurality of the accommodating slots distributed in an array.

[0021] Furthermore, the cathode brushes are arranged on both sides of the plating solution area along its length direction.

[0022] Furthermore, the electroplating device also includes a transmission component, and the transmission component is used to drive the carrier to move along the width direction of the plating solution area.

[0023] Furthermore, the interior of the blocking member is hollow to form a recovery channel, the lower end of the recovery channel is communicated with the plating liquid area, and the upper end of the recovery channel is communicated with the plating liquid box.

[0024] A photovoltaic cell production line comprises a loading and unloading assembly and the electroplating device as described above, wherein the loading and unloading assembly can place the silicon wafer to be electroplated into the receiving tank and can take out the silicon wafer that has been electroplated from the receiving tank.

[0025] Beneficial effects of the present invention:

[0026] The present invention provides an electroplating device and a photovoltaic cell production line, comprising a carrier, a blocking member, a plating liquid box, an anode member, a cathode brush and a recovery component, wherein a receiving groove is provided on the carrier, and the receiving groove is used to receive a silicon wafer; the blocking member is arranged to form a plating liquid area; the plating liquid box is arranged above the plating liquid area, and is used to receive the plating liquid, and an opening is provided on the plating liquid box, and the plating liquid in the plating liquid box can enter the plating liquid area through the opening; the anode member is electrically connected to the plating liquid in the plating liquid area; the cathode brush is arranged outside the plating liquid area; the recovery component is used to recover the plating liquid in the plating liquid area into the plating liquid box; the upper surface of the silicon wafer can contact the plating liquid in the plating liquid area and the cathode brush at the same time to form a conductive circuit. By placing the silicon wafer in the receiving groove, the silicon wafer is provided with stable fixation and support, which can effectively reduce the risk of silicon wafer fragmentation; the cathode brush is arranged outside the plating solution area, and the contact position between the silicon wafer and the cathode brush is fixed and static contact, which can ensure the uniformity of the electroplating grid line; the blocking member blocks the plating solution in the plating solution area, which can prevent the plating solution from contacting the cathode brush and the non-electroplating area of ​​the silicon wafer, avoiding the non-electroplating area and the cathode brush from being plated with metal, which is beneficial to ensuring product quality, increasing product qualification rate, reducing the frequency of replacing and repairing the cathode brush, and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic structural diagram of the carrier of the present invention;

[0028] Figure 2 is a front view of the electroplating device of the present invention;

[0029] Figure 3 It is a top view of the electroplating device of the present invention.

[0030] In the figure:

[0031] 100. Silicon wafer; 1. Carrier; 11. Receiving tank; 2. Blocking member; 3. Plating solution area; 4. Plating solution box; 5. Anode member; 6. Cathode brush; 7. Water-blocking roller; 8. Recovery channel. DETAILED DESCRIPTION

[0032] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0033] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0035] In the description of this embodiment, the terms "upper", "lower", "right", etc., directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0036] like Figure 1 to Figure 3As shown, this embodiment provides an electroplating device, including a carrier 1, a blocking member 2, a plating liquid box 4, an anode member 5, a cathode brush 6 and a recovery component, the carrier 1 is provided with a receiving groove 11, the receiving groove 11 is used to accommodate the silicon wafer 100; the blocking member 2 is surrounded to form a plating liquid area 3; the plating liquid box 4 is arranged above the plating liquid area 3, the plating liquid box 4 is used to accommodate the plating liquid, and the plating liquid box 4 is provided with an opening, the plating liquid in the plating liquid box 4 can enter the plating liquid area 3 through the opening; the anode member 5 is electrically connected to the plating liquid in the plating liquid area 3; the cathode brush 6 is arranged outside the plating liquid area 3; the recovery component is used to recover the plating liquid in the plating liquid area 3 into the plating liquid box 4; the upper surface of the silicon wafer 100 can be in contact with the plating liquid in the plating liquid area 3 and the cathode brush 6 at the same time to form a conductive circuit. By accommodating the silicon wafer 100 in the receiving groove 11, the silicon wafer 100 is provided with stable fixation and support, which can effectively reduce the risk of fragmentation of the silicon wafer 100; the cathode brush 6 is arranged outside the plating solution area 3, and the contact position between the silicon wafer 100 and the cathode brush 6 is fixed and static contact, which can ensure the uniformity of the electroplated grid line; the blocking member 2 blocks the plating solution in the plating solution area 3, which can prevent the plating solution from contacting the cathode brush 6 and the non-electroplating area of ​​the silicon wafer 100, and avoids the non-electroplating area and the cathode brush 6 from being plated with metal, which is beneficial to ensuring product quality, and increases the product qualification rate, reduces the frequency of replacing and repairing the cathode brush 6, and improves production efficiency.

[0037] In this embodiment, the anode member 5 is a porous anode plate, and the bottom of the plating solution box 4 is penetrated to form the above-mentioned opening. The porous anode plate is arranged at the opening, and the plating solution passes through the porous anode plate into the plating solution area 3. The porous anode plate is arranged at the bottom of the plating solution box 4. The plating solution naturally flows through the porous anode plate into the plating solution area 3 under the action of gravity, which can reduce the demand for the amount of plating solution, help save plating solution, and reduce production costs; and the contact area between the plating solution and the porous anode plate is large and uniform, which is conducive to increasing the electrochemical reaction rate, thereby improving the electroplating efficiency.

[0038] Furthermore, the electroplating device also includes a water-blocking member, which is arranged between the blocking member 2 and the cathode brush 6 to prevent the cathode brush 6 from contacting the plating solution, prevent the cathode brush 6 from being contaminated, and further extend the service life of the cathode brush 6.

[0039] like Figure 2 and Figure 3As shown, in this embodiment, the water-blocking member is a water-blocking roller 7. On the one hand, the water-blocking roller 7 can block the plating solution to prevent the plating solution from leaking from between the blocking member 2 and the silicon wafer 100, and further prevent the plating solution from contacting the cathode brush 6 and the non-electroplating area of ​​the silicon wafer 100. The water-blocking roller 7 can roll relative to the surface of the silicon wafer 100, and the friction between it and the silicon wafer 100 is small, which can reduce the resistance to the movement of the silicon wafer 100 and reduce the risk of damage to the silicon wafer 100. On the other hand, when the silicon wafer 100 is electroplated after the silicon wafer 100 is removed, the water-blocking roller 7 can drive the plating solution on the surface of the silicon wafer 100 by rolling to avoid the presence of plating solution residue on the surface of the silicon wafer 100, thereby preventing the cathode brush 6 from contacting the plating solution during the transfer process of the silicon wafer 100, and driving the plating solution to the surface of the next group of silicon wafers 100 to be electroplated, and continuing the electroplating, which can improve the utilization rate of the plating solution and reduce the production cost.

[0040] Furthermore, the surface of the water-blocking roller 7 is coated with a porous water-absorbing material, which is conducive to absorbing the plating solution cleanly, and further preventing the cathode brush 6 from contacting the plating solution during the transfer process of the silicon wafer 100. In this embodiment, the porous water-absorbing material is a porous sponge, which is conducive to improving the absorption capacity of the plating solution on the one hand, and on the other hand, the porous sponge material is soft, has a large contact area with the surface of the silicon wafer 100, and can avoid damaging the silicon wafer 100. Optionally, the porous water-absorbing material includes but is not limited to sponges, gels, silica gel or alumina, etc., which are not limited here.

[0041] In other embodiments, the water blocking member includes but is not limited to a silicone scraper, etc., which is not limited here.

[0042] Among them, the depth of the receiving groove 11 is not greater than the thickness of the silicon wafer 100. When the silicon wafer 100 is accommodated in the receiving groove 11, the upper surface of the silicon wafer 100 is flush with the surface of the carrier 1, or the upper surface of the silicon wafer 100 is higher than the surface of the carrier 1, so that the water-blocking roller 7 is in full contact with the upper surface of the silicon wafer 100, ensuring that there is no plating solution residue on the surface of the silicon wafer 100.

[0043] like Figure 1 As shown, in order to improve production efficiency, a plurality of receiving slots 11 distributed in an array are provided on the carrier 1, which can accommodate a plurality of silicon wafers 100, so as to electroplate the plurality of silicon wafers 100 at the same time, thereby improving production efficiency.

[0044] Furthermore, the cathode brushes 6 are arranged on both sides of the plating area 3 along its length direction. Multiple silicon wafers 100 can be arranged along the length direction of the plating area 3, so that multiple silicon wafers 100 can be electroplated at the same time, which is beneficial to improve production efficiency and reduce production costs.

[0045] In addition, the electroplating device also includes a transmission component, which is used to drive the carrier 1 to move along the width direction of the plating solution area 3, so as to remove the silicon wafers 100 that have completed electroplating, and transfer the next group of silicon wafers 100 to be electroplated to the bottom of the plating solution area 3 for electroplating. During the transfer process, the water-blocking roller 7 rolls in the opposite direction of the movement of the carrier 1 under the drive of the silicon wafer 100, and can drive the plating solution on the surface of the silicon wafer 100 to the surface of the next group of silicon wafers 100 to be electroplated, so as to facilitate the next round of electroplating.

[0046] Specifically, the transmission assembly includes a driving member and a transmission member, wherein the transmission member is used to carry the carrier 1, and the driving member is used to drive the transmission member to drive the carrier 1 to move along the width direction of the plating liquid area 3. The driving member includes but is not limited to a motor or a cylinder, etc.; the transmission member includes but is not limited to a roller or a belt, etc., which are not limited here.

[0047] like Figure 2 As shown, in the present embodiment, the interior of the blocking member 2 is hollow to form a recovery channel 8, the lower end of the recovery channel 8 is connected to the plating liquid area 3, and the upper end of the recovery channel 8 is connected to the plating liquid box 4. By forming the recovery channel 8 through the hollow interior of the blocking member 2, the plating liquid can be recovered along the circumference of the plating liquid area 3, which is beneficial to reduce the residual plating liquid and can make the structure of the electroplating device compact, avoiding the recovery device from occupying the space of the plating liquid area 3.

[0048] In this embodiment, the recovery component includes a liquid pump, which is used to drive the plating liquid from the plating liquid area 3 along the recovery channel 8 into the plating liquid box 4. The plating liquid can be recovered quickly and efficiently through the liquid pump. The input end of the liquid pump is connected to the recovery channel 8, and the output end is connected to the plating liquid box 4. The liquid pump includes but is not limited to being arranged in the recovery channel 8 or on the plating liquid box 4, which is not limited here.

[0049] Optionally, the re-extraction component may further include a liquid extractor, the input end of which is connected to the recovery channel 8, and the output end of which is connected to the plating liquid box 4, which can also realize the extraction of plating liquid, which is not limited here. Among them, the specific structure of the liquid extractor belongs to the prior art and is not repeated here.

[0050] In other embodiments, the recovery component may further include a liquid extraction pipe, in which the recovery channel 8 is arranged. One end of the liquid extraction pipe is located at the bottom of the plating liquid area 3, and the other end is connected to the plating liquid box 4. The liquid extraction pump or liquid extractor can recover the plating liquid in the plating liquid area 3 into the plating liquid box 4 through the liquid extraction pipe.

[0051] It is easy to understand that after the electroplating device of this embodiment completes single-sided electroplating, the silicon wafer 100 is turned over and the other side of the silicon wafer 100 can be electroplated to achieve double-sided electroplating. It can meet the electroplating needs of various battery silicon wafers and has a wide range of applications.

[0052] In addition, this embodiment also provides a photovoltaic cell production line, including a loading and unloading assembly and an electroplating device of any of the above embodiments, wherein the loading and unloading assembly can place the silicon wafer 100 to be electroplated into the receiving tank 11, and can take out the silicon wafer 100 that has been electroplated from the receiving tank 11, thereby improving the automation and production efficiency of photovoltaic cell production. By adopting the above electroplating device, the risk of silicon wafer 100 fragmentation can be reduced, the uniformity of the electroplated grid line can be ensured, the plating solution is prevented from contacting the non-electroplating area and the cathode brush 6, the product quality can be ensured, and the production efficiency can be improved.

[0053] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. For those skilled in the art, various obvious changes, readjustments and substitutions can be made without departing from the protection scope of the present invention. It is not necessary and impossible to list all the embodiments here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the claims of the present invention.

Claims

1. An electroplating device, characterized in that: include: A carrier (1), wherein a receiving groove (11) is provided on the carrier (1), and the receiving groove (11) is used to receive a silicon wafer (100); A blocking member (2), wherein the blocking member (2) is arranged to enclose a plating liquid area (3); A plating liquid box (4), the plating liquid box (4) being arranged above the plating liquid area (3), the plating liquid box (4) being used to contain plating liquid, and the plating liquid box (4) being provided with an opening, through which the plating liquid in the plating liquid box (4) can enter the plating liquid area (3); an anode member (5), the anode member (5) being electrically connected to the plating solution in the plating solution area (3); A cathode brush (6), wherein the cathode brush (6) is arranged outside the plating solution area (3); A recovery component, used for recovering the plating solution in the plating solution area (3) into the plating solution box (4); The upper surface of the silicon wafer (100) can be in contact with the plating solution in the plating solution area (3) and the cathode brush (6) at the same time to form a conductive loop.

2. The electroplating device according to claim 1, characterized in that: The anode member (5) is a porous anode plate. The bottom of the plating solution box (4) is penetrated to form the opening. The porous anode plate is arranged at the opening. The plating solution passes through the porous anode plate and enters the plating solution area (3).

3. The electroplating device according to claim 1, characterized in that: The electroplating device further comprises a water blocking member, which is arranged between the blocking member (2) and the cathode brush (6) to prevent the cathode brush (6) from contacting the plating solution.

4. The electroplating device according to claim 3, characterized in that: The water blocking component is a water blocking roller (7).

5. The electroplating device according to claim 4, characterized in that: The surface of the water-blocking roller (7) is coated with a porous water-absorbing material.

6. The electroplating device according to claim 1, characterized in that: The depth of the containing groove (11) is not greater than the thickness of the silicon wafer (100); and / or, The carrier (1) is provided with a plurality of accommodating slots (11) distributed in an array.

7. The electroplating device according to claim 1, characterized in that: The cathode brushes (6) are arranged on both sides of the plating solution area (3) along its length direction.

8. The electroplating device according to claim 7, characterized in that: The electroplating device further comprises a transmission component, wherein the transmission component is used to drive the carrier (1) to move along the width direction of the plating liquid area (3).

9. The electroplating device according to any one of claims 1 to 8, characterized in that: The blocking member (2) is hollow inside to form a recovery channel (8), the lower end of the recovery channel (8) is connected to the plating liquid area (3), and the upper end of the recovery channel (8) is connected to the plating liquid box (4).

10. A photovoltaic cell production line, characterized in that: It comprises a loading and unloading assembly and an electroplating device as claimed in any one of claims 1 to 9, wherein the loading and unloading assembly is capable of placing the silicon wafer (100) to be electroplated into the receiving tank (11), and is capable of taking the silicon wafer (100) that has been electroplated out of the receiving tank (11).

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