Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. A solvent supply section of the substrate processing apparatus is arranged at a position higher than an opening of an upper surface of a processing tank, and supplies a mist-like solvent from an outer side of the processing tank to an inner side of the processing tank in a plan view. A control section performs a solvent supply operation when a substrate is immersed in a processing liquid, that is, performs a depressurization of an inside of a chamber, and supplies a mist-like solvent from the solvent supply section. When in a solvent supply state in which the inside of the chamber is depressurized and the solvent is supplied, the control section causes a lifter to take out the substrate from the processing liquid in the processing tank, and thereafter, discharges the processing liquid from the processing tank by opening a QDR valve. When in the solvent supply state, the control section causes the substrate to be lowered to a lower position in the processing tank in which the processing liquid is not stored by the lifter, and thereafter, causes the substrate to be raised by the lifter.

Description

TECHNICAL FIELD

[0001] The present application relates to a substrate processing apparatus and a substrate processing method that process a substrate. The substrate can be exemplified by a semiconductor substrate, a substrate for FPD (Flat Panel Display), a glass substrate for a photomask, a substrate for an optical disc, a substrate for a magnetic disc, a ceramic substrate, a substrate for a solar cell, and the like. The FPD can be exemplified by a liquid crystal display device, an organic EL (electroluminescence) display device, and the like. BACKGROUND

[0002] A conventional substrate processing apparatus is provided with a chamber, a processing tank provided in the chamber, and a holding portion that holds a substrate (for example, refer to Japanese Patent Application Publication No. 2023-020268). The processing tank stores a processing liquid. The substrate held by the holding portion is raised between a lower position in the processing tank and an upper position in the chamber above the processing tank.

[0003] In addition, the substrate processing apparatus is provided with a solvent spouting portion and a hydrophobic agent spouting portion. The solvent spouting portion and the hydrophobic agent spouting portion are respectively arranged in the chamber. The solvent spouting portion spouts a vapor of isopropyl alcohol (IPA). The hydrophobic agent spouting portion spouts a vapor of a hydrophobic agent.

[0004] The substrate held by the holding portion is immersed in the processing liquid in the processing tank. Thereafter, the chamber is depressurized, and the vapor of IPA is spouted from the solvent spouting portion into the chamber. In this state, the substrate is lifted to above the processing tank. Thereby, the substrate is exposed to the atmosphere of the vapor of IPA, and thus the processing liquid adhering to the substrate is replaced with IPA (solvent). Thereafter, the vapor of the hydrophobic agent is spouted from the hydrophobic agent spouting portion into the chamber.

[0005] However, there is a possibility that the vapor of IPA is difficult to adhere to the substrate, and the replacement processing with IPA (solvent) is insufficient. For example, if the processing liquid (for example, pure water) remains on the substrate, the hydrophobation processing (silylation processing) becomes insufficient. Therefore, it becomes impossible to prevent pattern collapse well. SUMMARY

[0006] The present application was completed in view of such a situation, and aims to provide a substrate processing apparatus and a substrate processing method that can easily cause a solvent to adhere to a substrate.

[0007] The substrate processing apparatus of the present application is characterized by comprising: a processing tank that stores a processing liquid; a chamber that houses the processing tank; a decompression pump that decompresses the chamber; a lifter that lifts and lowers a substrate in the chamber while holding the substrate; an open / close valve that discharges the processing liquid from the processing tank; a solvent supply portion that is a solvent supply portion provided in the chamber, is disposed at a position higher than an opening formed in an upper surface of the processing tank, and supplies a solvent in at least one of mist and droplet shapes from an outer side of the processing tank to an inner side of the processing tank in plan view; and a control portion that performs a solvent supply operation, i.e., causes the decompression pump to decompress the chamber and supplies the solvent in at least one of mist and droplet shapes from the solvent supply portion, when the substrate is immersed in the processing liquid, and causes the lifter to take out the substrate from the processing liquid in the processing tank when in a solvent supply state in which the chamber is decompressed and the solvent is supplied, and thereafter discharges the processing liquid from the processing tank by opening the open / close valve, and performs a substrate lift operation, i.e., causes the lifter to lower the substrate to a position in the processing tank in which the processing liquid is not stored, and thereafter causes the lifter to raise the substrate, when in the solvent supply state.

[0008] According to the substrate processing apparatus of the present application, the solvent in at least one of mist and droplet shapes is supplied from the solvent supply portion. Thus, after the substrate is taken out from the processing liquid stored in the processing tank, the solvent can be more easily attached to the substrate than the solvent vapor. Therefore, the solvent can be efficiently attached to the substrate.

[0009] Further, in the substrate processing apparatus described above, it is preferable that, in the substrate lift operation, when in the solvent supply state, the substrate is lowered by the lifter to a position in the processing tank, and is held by the lifter at the position in the processing tank for a predetermined lower standby time, and thereafter the substrate is raised by the lifter, and is held by the lifter at a position after the substrate is raised for a predetermined upper standby time, the lower standby time being longer than the upper standby time.

[0010] For example, when the solvent in mist is supplied, the substrate is lifted up and down in order to suppress unevenness of the solvent adhesion. At this time, the lower standby time in which the position of the substrate in the processing tank is made to stand by is set to be longer than the upper standby time in which the position of the substrate after the substrate is lifted up is made to stand by. This is because, for example, when the solvent in mist is supplied, the amount of the solvent adhered to the substrate is more in the case where the substrate is arranged in the position in the processing tank than in the case where the substrate is arranged in the position above the processing tank in the chamber. Thus, the solvent can be more efficiently adhered to the substrate. That is, the consumption amount of the solvent can be reduced, and the processing time can be shortened.

[0011] Further, in the substrate processing apparatus described above, preferably, the substrate lifting operation is performed a plurality of times. The more the substrate lifting operation is repeated, the more the unevenness of the solvent adhesion can be further suppressed.

[0012] Further, in the substrate processing apparatus described above, preferably, a hydrophobic agent nozzle that supplies a hydrophobic agent vapor into the chamber is further provided, and the control section supplies the hydrophobic agent vapor from the hydrophobic agent nozzle to the substrate after the substrate lifting operation is performed and after the supply of the solvent is stopped.

[0013] Since the solvent in at least one of mist and droplet is supplied from the solvent supply section, the solvent can be easily adhered to the substrate. Thus, the replacement processing of the solvent can be prevented from being insufficient and the processing liquid can be left on the substrate. Further, the processing liquid left on the substrate hinders the hydrophobic agent from being adhered to the substrate. Since the replacement processing of the solvent can be sufficiently performed, the hydrophobation processing based on the hydrophobic agent can be favorably performed.

[0014] Further, in the substrate processing apparatus described above, preferably, the control section performs a second solvent supply operation after the supply of the hydrophobic agent vapor is stopped, that is, the reduced pressure pump reduces the pressure in the chamber, and the solvent in at least one of mist and droplet is supplied from the solvent supply section. Thus, the hydrophobic agent and the particles derived from the hydrophobic agent can be washed.

[0015] Further, in the substrate processing apparatus described above, preferably, the second solvent supply operation is performed when the lifter makes the substrate stand by in the position in the processing tank in which the processing liquid is not stored. When the hydrophobic agent or the like is washed, the amount of the solvent adhered to the substrate can be increased.

[0016] Further, in the substrate processing apparatus described above, preferably, the control section, when the second solvent supply operation is performed, lowers the substrate to a position inside the processing tank by the elevator, and stands by the substrate at the position inside the processing tank for a second preset lower standby time, and then raises the substrate by the elevator, and stands by the substrate at a position after the substrate is raised for a second preset upper standby time, the second lower standby time being longer than the second upper standby time.

[0017] For example, when the solvent in mist is supplied, the substrate is lowered and raised in order to suppress unevenness of the solvent attached to the substrate. At this time, the lower standby time in which the substrate is stood at the position inside the processing tank is set to be longer than the upper standby time in which the substrate is stood at the position after the substrate is raised. This is because, for example, when the solvent in mist is supplied, the amount of the solvent attached to the substrate is more in the case where the substrate is disposed at the position inside the processing tank than in the case where the substrate is disposed at the position above the processing tank in the chamber. Thus, the solvent can be more efficiently attached to the substrate. That is, the amount of the solvent consumed can be reduced, and the processing time can be shortened.

[0018] Further, the substrate processing method of the present application is a substrate processing method of a substrate processing apparatus including a processing tank that stores a processing liquid, a chamber that accommodates the processing tank, a decompression pump that decompresses the chamber, an elevator that lowers and raises a substrate in the chamber while holding the substrate, and an on-off valve that discharges the processing liquid from the processing tank, the substrate processing method characterized by comprising: a solvent supply step of causing the decompression pump to decompress the chamber and supplying a solvent in at least one of mist and droplet form from a solvent supply section when the substrate is immersed in the processing liquid; a substrate extraction step of causing the elevator to extract the substrate from the processing liquid inside the processing tank when in a solvent supply state in which the chamber is decompressed and the solvent is supplied; a processing liquid discharge step of discharging the processing liquid from the processing tank by opening the on-off valve when in the solvent supply state and after the substrate extraction step is performed; and a substrate lowering and raising step of lowering the substrate to a position inside the processing tank that does not store the processing liquid by the elevator when in the solvent supply state, and then raising the substrate by the elevator, the solvent supply section being provided inside the chamber, the solvent supply section being disposed at a position higher than an opening formed in an upper surface of the processing tank, and the solvent supply section supplying the solvent in at least one of mist and droplet form from outside the processing tank to inside the processing tank when viewed from above.

[0019] Effects of Invention

[0020] According to the substrate processing apparatus and the substrate processing method of the present application, it is possible to easily attach a solvent to a substrate. BRIEF DESCRIPTION OF DRAWINGS

[0021] Several modes presently considered to be the most practical ones are shown in the drawings and described in detail, it being understood that the application is not limited to the structures and methods as shown.

[0022] Figure 1 is a longitudinal sectional view showing the outline structure of the substrate processing apparatus of Example 1.

[0023] Figure 2 is a plan view showing spray nozzles of two solvent supply portions.

[0024] Figure 3 is a view for explaining the operation of the substrate processing apparatus of Example 1.

[0025] Figure 4 is a time chart showing the operation of the substrate processing apparatus of Example 1.

[0026] Figure 5 is a time chart for explaining the three-time substrate lifting operation in the solvent supply state.

[0027] Figure 6A is a graph of experimental results obtained by comparing the amount of IPA adhering to a substrate in four conditions when IPA in mist form is supplied, Figure 6B is a graph showing the case where a substrate is arranged at an upper position above a processing tank, Figure 6C is a graph showing the case where a substrate is arranged at a lower position in a processing tank.

[0028] Figure 7 is a graph for explaining Step S08A of Example 2.

[0029] Figure 8A 、 Figure 8B is a time chart for explaining the operation of the substrate processing apparatus of Example 2.

[0030] Figure 9 is a longitudinal sectional view showing the outline structure of the substrate processing apparatus of Example 3.

[0031] REFERENCE NUMERALS

[0032] 1: Substrate processing apparatus

[0033] 2: Processing tank

[0034] 2A: Opening

[0035] 3: Chamber

[0036] 4: Lifter

[0037] 11: QDR valve

[0038] 17: Hydrophobic agent vapor spout

[0039] 43: Pressure reducing pump

[0040] 61: Control unit

[0041] H2: Upper position

[0042] H3: Lower position

[0043] V1 to V7: On-off valve DETAILED DESCRIPTION

[0044] Example 1

[0045] Hereinafter, an example 1 of the present application will be described with reference to the drawings. Figure 1 is a longitudinal sectional view showing a schematic structure of the substrate processing apparatus 1 of the example 1. Figure 2 is a plan view showing the spray nozzles 29, 30 of the two solvent supplying sections 19.

[0046] (1) Structure of substrate processing apparatus

[0047] Reference Figure 1 The substrate processing apparatus 1 performs a drying process on a plurality of (for example, 50 or 25) substrates W. Each substrate W is formed, for example, in a circular plate shape. A pattern of an element or the like is formed on a front surface (a surface or a main surface) of each substrate W. In this case, a surface on the opposite side of the front surface of the substrate W is referred to as a back surface.

[0048] The substrate processing apparatus 1 includes a processing tank 2 that stores a processing liquid, a chamber 3 that accommodates the processing tank 2, a lifter 4, and two spouting pipes 5. The processing tank 2 is disposed at a lower portion in the chamber 3 and is disposed away from a bottom surface in the chamber 3. An opening 2A is formed on an upper surface of the processing tank 2. The processing liquid that overflows from the opening 2A is stored at a bottom portion in the chamber 3.

[0049] The lifter 4 lifts the plurality of substrates W in the chamber 3 while holding the plurality of substrates W. The lifter 4 includes a holding section 4A that holds the plurality of substrates W in a vertical posture and a lifting section 4B that lifts the holding section 4A in a vertical direction (Z direction). The plurality of substrates W held by the holding section 4A are disposed at equal intervals in a thickness direction of each substrate W. For example, in the example 1, the plurality of substrates W are arranged in the Y direction. Figure 1

[0050] ​The elevation section 4B has, for example, an electric motor. The elevation section 4B is capable of moving the plurality of substrates W held by the holding section 4A to a handover position Hl above the chamber 3, an upper position H2 inside the chamber 3 and above the processing tank 2, and a lower position (immersion processing position) H3 inside the processing tank 2. Note that the upper position H2 is preferably a position at which the lower end of each substrate W is higher than the two solvent supply sections 19 described later. Alternatively, the upper position H2 can be a position at which the two solvent supply sections 19 are disposed at a height between the center of each substrate W and the lower end of each substrate W.

[0051] Two spout pipes 5 for supplying a processing liquid into the processing tank 2 are provided at the bottom of the processing tank 2. Each spout pipe 5 is formed in a straight line along the Y direction in which the plurality of substrates W are arranged. Each spout pipe 5 has a plurality of spout openings disposed along the Y direction.

[0052] The leading end portion of the processing liquid pipe 7 is branched into two. Thus, the two leading end portions of the processing liquid pipe 7 are connected to the two spout pipes 5, respectively. The base end portion of the processing liquid pipe 7 is connected to a processing liquid supply source 9. The processing liquid supply source 9 supplies, for example, pure water as a processing liquid to the processing liquid pipe 7. The pure water can be, for example, deionized water (DIW). An on-off valve VI is provided on the processing liquid pipe 7. The on-off valve VI performs supply and stop of the pure water. For example, when the on-off valve VI is opened, the pure water is supplied from the two spout pipes 5. Alternatively, when the on-off valve VI is closed, the supply of the pure water from the two spout pipes 5 is stopped.

[0053] Note that, as the processing liquid, a diluted IPA liquid obtained by diluting an isopropyl alcohol (IPA) liquid with pure water can also be used. Alternatively, the two spout pipes 5 can be configured to selectively spout the pure water and the diluted IPA liquid.

[0054] Further, the substrate processing apparatus 1 has a QDR valve 11 provided at the bottom of the processing tank 2. The QDR valve 11 discharges a processing liquid (for example, pure water) from the processing tank 2. Specifically, the QDR valve 11 drains the pure water inside the processing tank 2 to the bottom surface inside the chamber 3. When the QDR valve 11 is opened, the pure water inside the processing tank 2 is rapidly drained to the bottom inside the chamber 3. When the QDR valve 11 is closed, the pure water can be stored inside the processing tank 2. Note that the QDR valve 11 corresponds to the on-off valve of the present application.

[0055] The chamber 3 has an opening 3A through which the plurality of substrates W pass, and an upper cover 13 that closes the upper portion of the opening 3A. The opening 3A is provided at the top of the chamber 3. When the upper cover 13 is opened, the plurality of substrates W can pass through the opening 3A. When the upper cover 13 is closed, the space inside the chamber 3 is closed.

[0056] Additionally, the substrate processing apparatus 1 includes two inactive gas nozzles 15, two hydrophobic agent vapor nozzles 17, and two solvent supply sections (two nozzle rows) 19. The two inactive gas nozzles 15, the two hydrophobic agent vapor nozzles 17, and the two solvent supply sections 19 are respectively disposed within the chamber 3. It should be noted that the solvent supply section 19 corresponds to the solvent supply section of the present invention. The hydrophobic agent vapor nozzles 17 correspond to the hydrophobic agent nozzles of the present invention.

[0057] Between the upper cover 13 and the processing tank 2, two inactive gas nozzles 15, two hydrophobic agent vapor nozzles 17, and two solvent supply units 19 are arranged sequentially from top to bottom. Detailed explanation follows. The two inactive gas nozzles 15 are positioned near the upper cover 13. Furthermore, the two inactive gas nozzles 15 are positioned between the upper cover 13 and the two hydrophobic agent vapor nozzles 17. The two hydrophobic agent vapor nozzles 17 are positioned between the two inactive gas nozzles 15 and the two solvent supply units 19.

[0058] Two solvent supply units 19 are disposed between the two hydrophobic agent vapor nozzles 17 and the processing tank 2. The two solvent supply units 19 are disposed at a position higher than the opening 2A formed on the upper surface of the processing tank 2. The two solvent supply units 19 are disposed near the outer edge of the opening 2A of the processing tank 2, that is, near the upper end of the side wall of the processing tank 2.

[0059] Each solvent supply unit 19, when viewed from above, supplies atomized solvent from the outside of the processing tank 2 (or opening 2A) to the inside of the processing tank 2. That is, as shown... Figure 2 As shown, two solvent supply units 19 are arranged on both sides of the processing tank 2 (or opening 2A) when viewed from above. Similarly, two inactive gas nozzles 15 are also arranged on both sides of the processing tank 2 when viewed from above. Similarly, two hydrophobic agent vapor nozzles 17 are also arranged on both sides of the processing tank 2 when viewed from above.

[0060] Two inactive gas nozzles 15 and two hydrophobic agent vapor nozzles 17 extend in a straight line along the Y direction. Each inactive gas nozzle 15 and each hydrophobic agent vapor nozzle 17 is formed into a tubular shape. Each inactive gas nozzle 15 and each hydrophobic agent vapor nozzle 17 has multiple nozzles arranged along the Y direction.

[0061] Two inactive gas nozzles 15 supply inactive gas to chamber 3 respectively. The front end of the supply pipe 21 branches into two. Thus, as... Figure 1 As shown, the two front ends of the supply pipe 21 are connected to two inert gas nozzles 15, respectively. The base of the supply pipe 21 is connected to a first inert gas supply source 23. The first inert gas supply source 23 supplies nitrogen as an inert gas to the supply pipe 21, for example. An on / off valve V2 is provided on the supply pipe 21. The on / off valve V2 controls the supply and cessation of the inert gas.

[0062] Two hydrophobic agent vapor spouts 17 supply hydrophobic agent vapor into the chamber 3. The front end portion of the supply pipe 25 is branched into two. Thus, the two front end portions of the supply pipe 25 are connected to the two hydrophobic agent vapor spouts 17, respectively. The base end of the supply pipe 25 is connected to a hydrophobic agent vapor supply source 27. The hydrophobic agent vapor supply source 27 delivers hydrophobic agent vapor to the supply pipe 25. The hydrophobic agent vapor is generated by evaporating liquid hydrophobic agent by a heater. The hydrophobic agent vapor can also contain a non-active gas (e.g., nitrogen) as a carrier gas. An on-off valve V3 is provided on the supply pipe 25. The on-off valve V3 performs supply and stop of the hydrophobic agent vapor. The hydrophobic agent modifies the surface of the substrate W to be hydrophobic. The hydrophobic agent can use, for example, a silicon-based hydrophobic agent or a metal-based hydrophobic agent. The hydrophobic agent is also called a silylating agent.

[0063] Two solvent supply portions 19 supply mist-like solvent into the chamber 3, respectively. Referring to Figure 2 The first solvent supply portion 19 is provided with a plurality of spray nozzles 29 arranged in the Y direction. The second solvent supply portion 19 is provided with a plurality of spray nozzles 30 arranged in the Y direction. Each of the spray nozzles 29, 30 is composed of a two-fluid nozzle. The two-fluid nozzle is a nozzle that sprays mist-like solvent by mixing the solvent with a non-active gas. That is, the solvent is sprayed by the two-fluid nozzle.

[0064] The front end portion of a solvent supply pipe 31 is connected to each of the spray nozzles 29, 30 (solvent supply portions 19). The front end portion of the solvent supply pipe 31 is branched into six, for example, in the case where the solvent supply portions 19 are provided with six spray nozzles 29, 30. The six front end portions are connected to the six spray nozzles 29, 30, respectively, for example. The base end of the solvent supply pipe 31 is connected to a solvent supply source 33. The solvent supply source 33 delivers, for example, isopropyl alcohol (IPA) liquid as a solvent (organic solvent). The solvent preferably has hydrophilicity. An on-off valve V4 is provided on the solvent supply pipe 31. The on-off valve V4 performs supply and stop of the solvent.

[0065] In addition, the front end portion of a non-active gas supply pipe 35 is connected to each of the spray nozzles 29, 30 (solvent supply portions 19). Similarly, the front end portion of the non-active gas supply pipe 35 is branched into six, for example, in the case where the solvent supply portions 19 are provided with six spray nozzles 29, 30. The six front end portions of the non-active gas supply pipe 35 are connected to the six spray nozzles 29, 30, respectively, for example. The base end of the non-active gas supply pipe 35 is connected to a second non-active gas supply source 37. The second non-active gas supply source 37 delivers, for example, nitrogen as a non-active gas. An on-off valve V5 is provided on the non-active gas supply pipe 35. The on-off valve V5 performs supply and stop of the non-active gas.

[0066] Further, the substrate processing apparatus 1 is provided with a decompression pump 43. An exhaust port 39 is provided on a side wall of the chamber 3. The exhaust port 39 is disposed on a lower side of a shutter 49 described later. An exhaust pipe 41 is connected to the exhaust port 39. The decompression pump 43 and an on-off valve V6 are provided in this order on the exhaust pipe 41 from the exhaust port 39 side. The decompression pump 43 discharges gas in the chamber 3, thereby decompressing the chamber 3.

[0067] Further, a discharge port 45 is provided on a bottom wall of the chamber 3. A discharge pipe 47 is connected to the discharge port 45. An on-off valve V7 is provided on the discharge pipe 47. When the on-off valve V7 is opened, liquid such as a processing liquid stored in the bottom of the chamber 3 is discharged through the discharge port 45 and the discharge pipe 47. When the on-off valve V7 is closed, liquid such as a processing liquid is not discharged from the chamber 3.

[0068] Further, the chamber 3 is provided with the shutter 49. The shutter 49 separates an upper space and a lower space in the chamber 3, and is disposed on a slightly lower side with respect to an upper edge (or an opening 2A) of the processing tank 2. The shutter 49 is formed so as to surround the processing tank 2. There is a gap between the shutter 49 and the outer wall of the processing tank 2, and between the shutter 49 and the inner wall of the chamber 3. Liquid, gas, and misty solvent pass through the gap.

[0069] The substrate processing apparatus 1 is provided with a control section 61 and a storage section (not shown). The control section 61 controls each structure of the substrate processing apparatus 1. The control section 61 is provided with one or a plurality of processors such as a central processing unit (CPU), for example. The storage section is provided with at least one of a read-only memory (ROM), a random-access memory (RAM), and a hard disk, for example. The storage section stores a computer program necessary for controlling each structure of the substrate processing apparatus 1.

[0070] For example, the control section 61 causes the elevator 4 to lift a plurality of substrates W, and causes the decompression pump 43 to decompress the chamber 3. Further, the control section 61 discharges a processing liquid from the processing tank 2 to the bottom of the chamber 3 by opening the QDR valve 11. Further, the control section 61 supplies misty solvent from the solvent supply section 19 by operating the on-off valves V4 and V5, and supplies hydrophobic agent vapor to the chamber 3 from the hydrophobic agent vapor jet pipe 17 by operating the on-off valve V3.

[0071] (2) Action of Substrate Processing Apparatus 1

[0072] Next, the action of the substrate processing apparatus 1 will be described with reference to Figure 3 , Figure 4 . Note that the illustration of the elevator 4 is omitted in Figure 3 . Further, the illustration of the processing tank 2 is omitted in Figure 3The evacuation operation based on the decompression pump 43 or the like is indicated by reference sign VAC. In Figure 4 In the following, the plurality of substrates W will be appropriately referred to as "substrate W" for explanation.

[0073] [Step S01] First immersion treatment (carrying-in of substrate into chamber)

[0074] Pure water is stored in the treatment tank 2 as a treatment liquid. The pure water is supplied from the spout pipe 5. The lifter 4 receives the plurality of substrates W from an unillustrated transfer robot at the handover position HI using the holding portion 4A. The lifter 4 lowers the substrates W from the handover position HI to a lower position H3 in the treatment tank 2. That is, the lifter 4 immerses the entire substrates W in the pure water in the treatment tank 2. By immersing the substrates W in the pure water, the substrates W can be cleaned and drying can be prevented. Thereafter, the opening 3A of the chamber 3 is closed by the upper lid 13.

[0075] [Step S02] Evacuation in chamber

[0076] Thereafter, the on-off valve V2 is opened to supply nitrogen gas from the non-reactive gas spout pipe 15 into the chamber 3. In addition, the decompression pump 43 performs decompression on the chamber 3 while the substrates W are immersed in the treatment liquid. That is, by operating the decompression pump 43 while the on-off valve V6 is opened, the gas in the chamber 3 is exhausted through the exhaust port 39 and the exhaust pipe 41. Thus, the chamber 3 becomes a state of lower pressure than the atmospheric pressure, i.e., a decompressed state (negative pressure state).

[0077] The decompression pump 43 is operated during steps S02 to S08. Similarly, the on-off valve V6 is opened during steps S02 to S08. Note that the chamber 3 becomes a decompressed state during steps S02 to S08 and in step S13.

[0078] [Step S03] First IPA supply (formation of atmosphere of IPA in mist form)

[0079] Thereafter, the supply of nitrogen gas from the non-reactive gas spout pipe 15 is stopped by closing the on-off valve V2. In addition, while the substrates W are immersed in the treatment liquid, the chamber 3 is decompressed and the IPA in mist form is supplied from the solvent supply portion 19 (solvent supply operation). That is, the on-off valves V4 and V5 are opened to supply the IPA in mist form from the solvent supply portion 19 into the chamber 3. Thus, the chamber 3 becomes an atmosphere of the IPA in mist form. Note that the on-off valves V4 and V5 are opened during steps S03 to S06.

[0080] In addition, the IPA in mist form can be contained in the pure water in the process tank 2. Therefore, it can also be said that it becomes IPA liquid diluted with the pure water in the process tank 2. Thus, in step S04 described later, when the substrate W is taken out from the pure water containing IPA in the process tank 2, it is possible to promote replacement of the pure water adhering to the substrate W with IPA liquid.

[0081] [Step S04] 1st IPA supply (IPA replacement)

[0082] After that, while in a state where the chamber 3 is depressurized and the IPA in mist form is supplied (solvent supply state), the lifter 4 takes out the substrate W from the pure water in the process tank 2. The details are described. The depressurization in the chamber 3 and the supply of the IPA in mist form from the solvent supply part 19 are continued. In this state, the lifter 4 lifts the substrate W from the pure water in the process tank 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2.

[0083] When the substrate W is exposed to the IPA in mist form, replacement processing in which the pure water adhering to the substrate W is replaced with IPA is performed. Note that in step S04, the depressurization pump 43 can also be stopped and the on-off valve V6 can be closed. In this case, the depressurized state is maintained.

[0084] [Step S05] 1st IPA supply (drain pure water from process tank)

[0085] After that, the pure water is drained from the process tank 2 by opening the QDR valve 11. The details are described. After step S04 is performed, the state where the chamber 3 is depressurized and the IPA in mist form is supplied (solvent supply state) is continued. In this state, the pure water is rapidly drained from the process tank 2 to the bottom surface in the chamber 3 by opening the QDR valve 11. After the process tank 2 is emptied, the QDR valve 11 is closed.

[0086] [Step S06] 1st IPA supply (substrate lifting operation)

[0087] After that, while in the solvent supply state, the lifter 4 performs a substrate lifting operation, that is, lowers the substrate W to the lower position H3 in the process tank 2 where the pure water is not stored, and then raises the substrate W. The details are described. Figure 5 is a time chart for explaining three times of substrate lifting operation in the solvent supply state.

[0088] In step S06, three times of substrate lifting operation are performed. In Figure 5In the present embodiment, a first substrate lifting operation is performed during the time points tl to t5. A second substrate lifting operation is performed during the time points t5 to t9. A third substrate lifting operation is performed during the time points t9 to tl3. By performing the substrate lifting operations, unevenness in the attachment of the IPA mist can be suppressed, and the IPA can be uniformly attached to the substrate W. The three substrate lifting operations perform the same operation. Therefore, the first substrate lifting operation will be described as a representative example.

[0089] In Figure 5 Step S05 is performed until the time point tl. At the time points tl to t2, the lifter 4 lowers the substrate W to a lower position H3 inside the processing tank 2. Thereafter, at the time points t2 to t3, the lifter 4 stands by the substrate W at the lower position H3 for a predetermined lower standby time LT. Thereafter, at the time points t3 to t4, the lifter 4 raises the substrate W to an upper position H2 inside the chamber 3 and above the processing tank 2. Thereafter, at the time points t4 to t5, the lifter 4 stands by the substrate W at the upper position H2 after the substrate W is raised for a predetermined upper standby time UT. In this substrate lifting operation, the lower standby time LT is set to be longer than the upper standby time UT.

[0090] In the case where the lower standby time LT is longer than the upper standby time UT, the IPA is more likely to be attached to the substrate W. Therefore, it is possible to prevent the replacement processing of the IPA from becoming insufficient and leaving pure water on the substrate W. The hydrophobic agent vapor is supplied in the next step S07. Here, the pure water remaining on the substrate W hinders the attachment of the hydrophobic agent to the substrate W. Since the replacement processing of the IPA can be sufficiently performed, it is possible to prevent this case.

[0091] Thereafter, the second and third substrate lifting operations are performed at the time points t5 to t13. Thereafter, the supply operation of the hydrophobic agent vapor of the next step S07 is started at the time point t13. Note that, for example, the lowering time (lowering speed) of the time points tl to t2 is shorter (faster) than the raising time (raising speed) of the time points t3 to t4. In this regard, the lowering time can also be the same as the raising time, and can also be longer than the raising time.

[0092] Note that, in step S06, three substrate lifting operations are performed. In this regard, one substrate lifting operation can also be performed. In addition, two or more than four substrate lifting operations can also be performed. That is, one or more substrate lifting operations can also be performed in step S06. Note that, in Figure 5 In the present embodiment, the reference symbol MD indicates an intermediate height position between the upper position H2 and the lower position H3. The solvent supply portion 19 can also be disposed at the height position MD or in the vicinity thereof.

[0093] 〔Step S07〕 Supply of Hydrophobic Agent Vapor

[0094] After that, the evacuation of the chamber 3 is continued. In addition, the supply of the misty IPA from the solvent supply section 19 is stopped by closing the on-off valves V4, V5. After that, the hydrophobic agent vapor is supplied from the hydrophobic agent vapor spouting pipes 17 into the chamber 3 by opening the on-off valve V3. At this time, the lifter 4 lifts the substrate W in such a manner that the substrate W passes between the two hydrophobic agent vapor spouting pipes 17. Thus, the hydrophobic agent vapor is uniformly supplied to the entire substrate W. The supply of the hydrophobic agent vapor replaces the IPA adhering to the substrate W with the hydrophobic agent. The hydrophobic agent modifies the surface of the substrate W to be hydrophobic. Note that, in steps S04 to S06, since the replacement processing with the IPA is sufficiently performed, the hydrophobizing processing is sufficiently performed, and thus, the pattern collapse is favorably prevented.

[0095] 〔Step S08〕 2nd IPA supply

[0096] After the supply of the hydrophobic agent vapor is stopped, the misty solvent is supplied from the solvent supply section 19 (2nd solvent supply operation). The operation is specifically described. The evacuation of the chamber 3 is continued after step S07. The supply of the hydrophobic agent vapor from the hydrophobic agent vapor spouting pipes 17 is stopped by closing the on-off valve V3. In addition, the misty IPA is supplied from the solvent supply section 19 by opening the on-off valves V4, V5. Thus, the hydrophobic agent adhering to the substrate W is replaced with the IPA. That is, the hydrophobic agent adhering to the substrate W is washed with the IPA. In addition, the particles derived from the hydrophobic agent adhering to the substrate W are washed with the IPA. The particles are generated, for example, by the direct contact of the moisture with the hydrophobic agent.

[0097] 〔Step S09〕 Pure water discharge to outside of chamber

[0098] After that, the decompression pump 43 is stopped and the on-off valve V6 is closed. Thus, the evacuation of the chamber 3 is stopped. The supply of the misty IPA from the solvent supply section 19 is stopped by closing the on-off valves V4, V5. In addition, the nitrogen gas is supplied from the non-active gas spouting pipe 15 into the chamber 3 by opening the on-off valve V2. Thus, the chamber 3 is returned from the decompressed state to the atmospheric pressure. After that, the pure water stored in the bottom of the chamber 3 is discharged to the outside of the chamber 3 through the discharge port 45 and the discharge pipe 47 by opening the on-off valve V7. When the pure water is completely discharged from the bottom of the chamber 3 (after the chamber 3 is emptied), the on-off valve V7 is closed. Note that, the nitrogen gas is supplied during steps S09 to Sll.

[0099] 〔Step S10〕 Processing tank cleaning (supply of cleaning liquid)

[0100] After that, the supply of nitrogen gas from the non-reactive gas spout 15 is continued. In this state, the pure water is supplied from the spouting pipe 5 into the processing tank 2 by opening the on-off valve VI as a cleaning liquid. The inside of the processing tank 2 is cleaned by the pure water stored in the processing tank 2. Note that, when the pure water is stored in the processing tank 2, the pure water supplied from the spouting pipe 5 into the processing tank 2 can also be caused to overflow from the opening 2A of the processing tank 2.

[0101] [Step Sll] Cleaning of the processing tank (discharge of cleaning liquid)

[0102] After that, the supply of nitrogen gas from the non-reactive gas spout 15 is continued. In this state, the supply of pure water from the spouting pipe 5 is stopped by closing the on-off valve VI. In addition, the pure water (cleaning liquid) stored in the bottom of the chamber 3 is rapidly discharged from the inside of the processing tank 2 into the bottom surface of the chamber 3 by opening the QDR valve 11. In addition, the pure water (cleaning liquid) stored in the bottom of the chamber 3 is discharged by opening the on-off valve V7. After the processing tank 2 is emptied, the QDR valve 11 is closed. In addition, after the chamber 3 is emptied, the on-off valve V7 is closed.

[0103] [Step S12] 2nd immersion processing

[0104] After that, the supply of nitrogen gas from the non-reactive gas spout 15 is continued. In this state, the on-off valve VI is opened to supply pure water from the spouting pipe 5 into the processing tank 2. When a predetermined amount of pure water is stored in the processing tank 2, the lifter 4 lowers the substrate W from the upper position H2 to the lower position H3. Further, the substrate W is immersed in the pure water in the processing tank 2 for a predetermined period of time. By this, cleaning processing for further removing particles and the like adhering to the substrate W is performed.

[0105] [Step S13] 3rd (final) IPA supply (drying processing)

[0106] After that, the supply of pure water from the spouting pipe 5 is stopped by closing the on-off valve VI. After that, the gas in the chamber 3 is discharged by opening the on-off valve V6 while operating the pressure reducing pump 43. By this, the chamber 3 becomes a reduced pressure state. After that, the on-off valves V4 and V5 are opened to supply the IPA in mist form from the solvent supply section 19. After that, the chamber 3 becomes an atmosphere of the IPA in mist form, the lifter 4 lifts the substrate W from the pure water in the processing tank 2. That is, the lifter 4 raises the substrate W from the lower position H3 to the upper position H2. When the substrate W is exposed to the IPA in mist form, the pure water adhering to the substrate W is replaced with the IPA.

[0107] While the evacuation of the chamber 3 is continued by the reduced-pressure pump 43 or the like, the supply of the misty IPA from the solvent supply section 19 is stopped by closing the on-off valves V4 and V5. Since the supply of the misty IPA is stopped and the chamber 3 is reduced in pressure, the IPA adhering to the substrate W is actively volatilized and the substrate W is subjected to a drying process. In the drying process, the nitrogen gas can also be supplied from the inert gas nozzle 15 after the supply of the misty IPA is stopped.

[0108] 〔Step S14〕 Supply of nitrogen gas

[0109] The reduced-pressure pump 43 is stopped and the on-off valve V6 is closed. In addition, the on-off valve V2 is opened to supply the nitrogen gas from the inert gas nozzle 15. Thereby, the chamber 3 is returned from the reduced-pressure state to the atmospheric pressure. Thereafter, the pure water is discharged from the inside of the process tank 2 by opening the QDR valve 11 and the on-off valve V7, and the pure water is discharged from the bottom of the chamber 3.

[0110] 〔Step S15〕 Carrying-out of substrate from chamber

[0111] The opening 3A is opened by opening the upper lid 13. The substrate W held by the holding section 4A is raised from the upper position H2 to the handover position Hl by the elevator 4. The substrate W raised to the handover position Hl is moved to the next destination by a conveyance robot not shown.

[0112] According to the present embodiment, the misty solvent (e.g., IPA) is supplied from the solvent supply section 19. Thereby, after the substrate W is taken out from the treatment liquid (e.g., pure water) stored in the process tank 2, the solvent can be more easily adhered to the substrate W than the solvent vapor. Therefore, the solvent can be efficiently adhered to the substrate W.

[0113] For example, when the misty solvent is supplied, the substrate W is raised and lowered. At this time, the lower standby time LT in which the substrate W is to be standby at the lower position H3 in the process tank 2 is set to be longer than the upper standby time UT in which the substrate W is to be standby at the upper position H2 after the substrate W is raised. This is because, for example, when the misty solvent is supplied, the amount of the solvent adhered to the substrate W is more in the case where the substrate W is disposed at the lower position H3 in the process tank 2 than in the case where the substrate W is disposed at the upper position H2 above the chamber 3. Thereby, the solvent can be more efficiently adhered to the substrate W. That is, the amount of the solvent consumed can be reduced, and the processing time can be shortened.

[0114] Here, the effects are supplemented with experimental results. Figure 6A is a graph of experimental results obtained by comparing the amount of IPA adhered to the substrate W in four conditions when the misty IPA is supplied. Figure 6B is a graph showing a case where the substrate W is disposed at the upper position H2 above the process tank 2. Figure 6Cis a view showing a case where the substrate W is arranged at the lower position H3 in the processing tank 2. In Figure 6B , Figure 6C , the illustration of the lifter 4 is omitted. In addition, in Figure 6B , Figure 6C , the processing tank 2 is not stored with the processing liquid. Note that, in Figure 6A , the processing time of IPA being the same means the supply amount of IPA being the same.

[0115] In Figure 6A , the black triangular marks are the results when the misty IPA is supplied from the solvent supply section 19 while one piece of the substrate W is arranged at the lower position H3 in the processing tank 2 shown in Figure 6C . In addition, the white triangular marks are the results when the misty IPA is supplied from the solvent supply section 19 while one piece of the substrate W is arranged at the upper position H2 above the processing tank 2 shown in Figure 6B . Comparing the two, it is found that the attachment amount of IPA is more in the case of the black triangular marks (the lower position H3 in the processing tank 2).

[0116] In addition, in Figure 6A , the black circular marks are the results when the misty IPA is supplied from the solvent supply section 19 while 50 pieces of the substrate W are arranged at the lower position H3 in the processing tank 2 shown in Figure 6C . In addition, the white circular marks are the results when the misty IPA is supplied from the solvent supply section 19 while 50 pieces of the substrate W are arranged at the upper position H2 above the processing tank 2 shown in Figure 6B . Comparing the two, it is also found that the attachment amount of IPA is more in the case of the black circular marks (the lower position H3 in the processing tank 2).

[0117] In this way, it is considered that the attachment amount of IPA is more in the case where the substrate W is arranged at the lower position H3 in the processing tank 2 because the misty IPA is likely to stay in the processing tank 2.

[0118] Returning to the explanation of the effects of the present embodiment, the substrate lifting operation is performed a plurality of times (for example, three times). The more the substrate lifting operation is repeated, the more the unevenness of the solvent attachment is suppressed.

[0119] In addition, the control section 61 supplies the hydrophobic agent vapor to the substrate W from the two hydrophobic agent vapor spouts 17 in step S07. This has the following effects. Since the misty solvent is supplied from the solvent supply section 19, the solvent is likely to be attached to the substrate W. Therefore, it is possible to prevent the replacement processing of the solvent from becoming insufficient and the processing liquid from remaining on the substrate W. In addition, the processing liquid remaining on the substrate W hinders the hydrophobic agent from being attached to the substrate W. Since the replacement processing of the solvent is sufficiently performed, the hydrophobic processing based on the hydrophobic agent is favorably performed.

[0120] Embodiment 2

[0121] Next, Embodiment 2 of the present application will be described with reference to the drawings. Note that the description overlapping with Embodiment 1 will be omitted. Figure 7 is a view for explaining Step S08A of Embodiment 2. Figure 8A 、 Figure 8B is a view for explaining the operation of the substrate processing apparatus 1 of Embodiment 2.

[0122] In Embodiment 1, after the IPA adhering to the substrate W is replaced with the hydrophobic agent by the hydrophobic agent vapor, the hydrophobic agent is rinsed with the IPA in mist. At this time, the IPA in mist is supplied while the substrate W is in the upper position H2. At this point, the IPA in mist can also be supplied while the substrate W is in the lower position H3 of the processing tank 2 that does not store the processing liquid (e.g., pure water). That is, instead of performing Step S08 shown in Figure 3 , Step S08A shown in Figure 7 is performed.

[0123] [Step S08A] 2nd IPA supply (2nd solvent supply operation)

[0124] Reference will be made to Figure 7 . After the supply of the hydrophobic agent vapor is stopped, the chamber 3 is depressurized by the depressurizing pump 43, and the solvent (IPA) in mist is supplied from the solvent supply section 19 (2nd solvent supply operation). The operation will be described in detail. The evacuation of the chamber 3 is continued after Step S07. The supply of the hydrophobic agent vapor from the hydrophobic agent vapor nozzle 17 is stopped by closing the on-off valve V3.

[0125] After that, the IPA in mist is supplied from the solvent supply section 19 by opening the on-off valves V4 and V5. In addition, the substrate W is lowered from the upper position H2 to the lower position H3 by the elevator 4. That is, when the substrate W is at (in) the lower position H3 of the processing tank 2 that does not store the processing liquid (e.g., pure water) by the elevator 4, the solvent (i.e., the 2nd solvent supply operation is performed) in mist is supplied from the solvent supply section 19. Since the IPA in mist is supplied while the substrate W is at the lower position H3, the amount of the IPA adhering to the substrate W can be increased.

[0126] As shown in Figure 8A , the substrate W can be lowered from the upper position H2 to the lower position H3 by the elevator 4 while the IPA in mist is supplied from the solvent supply section 19 by opening the on-off valves V4 and V5. In addition, the substrate W can be lowered to the lower position H3 by the elevator 4 (refer to the single-dot chain line shown by reference numeral DL of Figure 8A ) after the IPA in mist is supplied from the solvent supply section 19 by opening the on-off valves V4 and V5.

[0127] In addition, as shown in Figure 8B , the misty IPA can be supplied from the solvent supply section 19 by opening the on-off valves V4, V5 halfway through the lowering of the substrate W to the lower position H3 by the elevator 4. In this case, the substrate W starts to be lowered to the lower position H3 when the hydrophobic agent vapor is supplied from the hydrophobic agent vapor jet pipe 17. In addition, the supply of the misty IPA from the solvent supply section 19 can be started after the substrate W is lowered to the lower position H3 by the elevator 4, that is, when the substrate W is positioned at the lower position H3.

[0128] Note that, as shown in Figure 8A , Figure 8B , the substrate W can be raised from the lower position H3 to the upper position H2 by the elevator 4 in step S09.

[0129] According to the present embodiment, the control section 61 performs the second solvent supply operation after stopping the supply of the hydrophobic agent vapor, that is, causes the reduced-pressure pump 43 to reduce the pressure in the chamber 3 and supplies the misty solvent from the solvent supply section 19. Thereby, the hydrophobic agent and the particles derived from the hydrophobic agent can be rinsed. In addition, the second solvent supply operation is performed when the substrate W is waiting at the lower position H3 in the processing tank 2 in which the processing liquid is not stored by the elevator 4. When the hydrophobic agent and the like are rinsed, the amount of the solvent adhered to the substrate W can be increased. Therefore, the solvent can be efficiently adhered to the substrate. In addition, the processing time can be shortened as compared with the case where the substrate is raised and lowered a plurality of times as shown in Figure 5 .

[0130] Embodiment 3

[0131] Next, Embodiment 3 of the present application will be described with reference to the drawings. Note that the description repeated in Embodiments 1 and 2 will be omitted. Figure 9 is a longitudinal sectional view showing the outline structure of the substrate processing apparatus 1 according to Embodiment 3.

[0132] In Embodiment 1, the spray nozzles 29, 30 of the two solvent supply sections 19 supply the misty solvent (e.g., IPA). In this regard, in Embodiment 3, the spray nozzles 29, 30 can also supply the misty hydrophobic agent.

[0133] Reference will be made to Figure 9 . The substrate processing apparatus 1 does not have the two hydrophobic agent vapor jet pipes 17 shown in Figure 1 . Therefore, the front end of the supply pipe 25 is connected to the solvent supply pipe 31 between the spray nozzles 29, 30 and the on-off valve V4. Specifically, the front end of the supply pipe 25 is connected to the solvent supply pipe 31 between the branch pipe 65 shown in Figure 2 and the on-off valve V4. The branch pipe 65 is a member that divides the solvent supply pipe 31 into the spray nozzle 29 side and the spray nozzle 30 side.

[0134] The base end of the supply pipe 25 is connected to a hydrophobic agent supply source 27A. The hydrophobic agent supply source 27A supplies a liquid of a hydrophobic agent to the supply pipe 25. An on-off valve V3 is provided to the supply pipe 25. Note that a heater HT1, HT2 can be provided to each of between the on-off valve V4 and the solvent supply source 33 and between the on-off valve V3 and the hydrophobic agent supply source 27A. For example, the heater HT2 heats the liquid of the hydrophobic agent passing through the supply pipe 25 to a predetermined temperature from the outside of the supply pipe 25. The heater HT1 also similarly heats the solvent to a predetermined temperature.

[0135] By being configured like this, the two solvent supply portions (two rows of spray pipes) 19 can selectively supply a mist of a solvent (for example, IPA) and a mist of a hydrophobic agent into the chamber 3.

[0136] The operation of the substrate processing apparatus 1 of the present embodiment will be briefly explained. In Figure 3 In the step S07 shown, the exhaust in the chamber 3 is continued. The supply of the mist of IPA from the two solvent supply portions 19 is stopped by closing the on-off valves V4, V5. Thereafter, the mist of the hydrophobic agent is supplied from the two solvent supply portions 19 into the chamber 3 by opening the on-off valves V3, V5. At this time, the elevator 4 elevates the substrate W in such a manner that the substrate W passes between the two solvent supply portions 19. The supply of the hydrophobic agent vapor replaces the IPA adhering to the substrate W with the hydrophobic agent.

[0137] In addition, the operation of elevating the substrate W can be performed in the same manner as the substrate elevation operation of the time points t1 to t5 shown. Figure 5 In addition, the operation of elevating the substrate W can be performed in the same manner as the substrate elevation operation of the time points t1 to t5 shown. That is, the operation of elevating the substrate W can be performed in such a manner that the substrate W is lowered to the lower position H3 in the processing tank 2 by the elevator 4 when the mist of the hydrophobic agent is supplied, and the substrate W is left to stand at the lower position H3 by the elevator 4 for a predetermined lower stand-by time LT, and thereafter, the substrate W is elevated by the elevator 4, and the substrate W is left to stand at the upper position H2 after the substrate W is elevated by the elevator 4 for a predetermined upper stand-by time UT by the elevator 4. In addition, the lower stand-by time LT is set to be longer than the upper stand-by time UT. When the supply of the mist of the hydrophobic agent is stopped, the on-off valves V3, V5 are closed.

[0138] According to the present embodiment, since the mist of the hydrophobic agent is supplied, the hydrophobic agent can be more easily adhered to the substrate W than the solvent vapor. Therefore, the hydrophobic agent can be efficiently adhered to the substrate W. In addition, when the substrate W is elevated while the mist of the hydrophobic agent is supplied, the lower stand-by time LT is made longer than the upper stand-by time UT. Thereby, more hydrophobic agent can be adhered to the substrate W.

[0139] In addition, the solvent and the hydrophobic agent can be selectively sprayed from the spray nozzles 29, 30 of the solvent supply portions 19. For example, as shown in Figure 1As shown, the case where two solvent supply portions 19 and two hydrophobic agent vapor spouting pipes 17 are arranged at different heights is assumed. If the substrate W is caused to pass between the two solvent supply portions 19 in the spouting of the solvent, and the substrate W is caused to pass between the two hydrophobic agent vapor spouting pipes 17 in the spouting of the hydrophobic agent, there is a case where the distance by which the substrate W is raised and lowered becomes long. Therefore, there is a case where the height of the chamber 3 becomes long. However, according to the present embodiment, it is possible to suppress the height of the chamber 3.

[0140] The present application is not limited to the above-described embodiments, and can be implemented as described below.

[0141] (1) In step S08 of the above-described Embodiment 1, when the IPA is supplied in mist form (2nd solvent supply operation), the substrate W is located at the upper position H2, and the substrate W is not raised and lowered. At this point, it is also possible that, when the IPA is supplied in mist form, the lifter 4 lowers the substrate W to the lower position H3, and then raises the substrate W (2nd substrate raising operation).

[0142] In addition, the 2nd substrate raising operation of step S08 of the present modified example can also be performed similarly to the substrate raising operation at the time points t1 to t5 shown in Figure 5 At this point, it is also possible that, when the IPA is supplied in mist form, the lifter 4 lowers the substrate W to the lower position H3 within the processing tank 2, and the lifter 4 causes the substrate W to stand by at the lower position H3 for a pre-set lower standby time LT, and then the lifter 4 raises the substrate W, and the lifter 4 causes the substrate W to stand by at the upper position H2 after the substrate W is raised for a pre-set upper standby time UT. In addition, the lower standby time LT is set to be longer than the upper standby time UT.

[0143] For example, when the solvent is supplied in mist form, the substrate W is raised and lowered in order to suppress unevenness in the attachment of the solvent. At this time, the lower standby time LT at which the substrate W is caused to stand by at the lower position H3 within the processing tank 2 is set to be longer than the upper standby time UT at which the substrate W is caused to stand by at the upper position H2 after the substrate W is raised. This is because, for example, when the solvent is supplied in mist form, the amount of attachment of the solvent to the substrate W is greater in the case where the substrate W is arranged at the lower position H3 within the processing tank 2 than in the case where the substrate W is arranged at the upper position H2 within the chamber 3 and above the processing tank 2. Thus, it is possible to more efficiently attach the solvent to the substrate W. That is, it is possible to reduce the amount of consumption of the solvent, and it is possible to shorten the processing time. Note that the lower standby time LT in step S08 corresponds to the 2nd lower standby time of the present application. The upper standby time UT in step S08 corresponds to the 2nd upper standby time of the present application.

[0144] (2) In step S13 of each of the above-described embodiments and the modified example (1), when the IPA is supplied in mist form, the substrate W is located at the upper position H2, and the substrate W is not raised and lowered. At this point, step S13 can also be performed as follows.Figure 3 、 Figure 5 The substrate lifting operation is performed as described in steps S03 to S06. At this time, one or a plurality of substrate lifting operations can be performed.

[0145] (3) In each of the above embodiments and each of the above modifications, Figure 2 The two solvent supply portions 19 are provided with spray nozzles 29, 30. In this regard, the two solvent supply portions 19 can be provided with a plurality of spray heads (shower nozzles) that supply solvent (e.g., IPA) in the form of droplets instead of the spray nozzles 29, 30. Each of the spray heads does not spray solvent in a linear shape but sprays droplets. The spray heads are also called single-fluid nozzles. Each of the solvent supply portions 19 can supply solvent in at least one of the forms of mist and droplets.

[0146] (4) In each of the above embodiments and the above modifications (1) and (2), the spray nozzles 29, 30 of the two solvent supply portions 19 are composed of two-fluid nozzles. In this regard, the spray nozzles 29, 30 can be composed of single-fluid nozzles. A single-fluid nozzle is a nozzle that makes liquid into mist using the pressure of the liquid without using gas.

[0147] (5) In each of the above embodiments and each of the above modifications, Figure 5 In the three substrate lifting operations of the above-described embodiment, the substrate W is made to stand by at the upper position H2 after being lifted to the upper position H2. The height position at which the substrate W stands by on the upper side can not necessarily coincide with the upper position H2. As shown in FIG. 6, the position at which the substrate W stands by on the upper side can be, for example, a position H2A near the upper position H2. Note that the upper position H2 or the position H2A corresponds to the position after the substrate is lifted according to the present application. Figure 5

[0148] (6) In each of the above embodiments and each of the above modifications, Figure 5 In the three substrate lifting operations of the above-described embodiment, the substrate W is made to stand by at the lower position H3 after being lowered to the lower position H3. The height position at which the substrate W stands by on the lower side can not necessarily coincide with the lower position H3. The position at which the substrate W stands by on the lower side can be, for example, a position H3A near the lower position H3 as shown in FIG. 7. Note that the lower position H3 or the position H3A corresponds to the position in the processing tank according to the present application. Figure 5

[0149] ​​(7) In each of the above embodiments and each of the above modifications, the substrate processing apparatus 1 is provided with the QDR valve 11 that discharges the processing liquid (e.g., pure water) from the processing tank 2. In this regard, the substrate processing apparatus 1 can also be provided with a discharge pipe that extends from the processing tank 2 to the outside of the chamber 3, and an on-off valve provided on the discharge pipe. It can also be that, by opening the on-off valve, the processing liquid is discharged directly from the processing tank 2 to the outside of the chamber 3, without being stored in the bottom portion of the chamber.

[0150] (8) In each of the above embodiments and each of the above modifications, the QDR valve 11 is closed in step S06. In this regard, the QDR valve 11 can also be opened if the following relationship is satisfied, i.e., the amount of IPA adhering to the substrate W is greater when the substrate W is disposed in the lower position H3 than when the substrate W is disposed in the upper position H2.

[0151] (9) In each of Embodiments 1 and 2 and each of the above modifications, two hydrophobic agent vapor spout pipes 17 supply the hydrophobic agent vapor into the chamber 3. Instead of the two hydrophobic agent vapor spout pipes 17, two spout pipe rows can also be provided. The two spout pipe rows are each provided with a plurality of spray nozzles disposed along the Y direction. The spray nozzles of the two spout pipe rows supply the hydrophobic agent in a mist form into the chamber 3.

[0152] The present application can be carried out in other specific forms without departing from the spirit or essential characteristics thereof, and it is to be understood that the above description is not to be considered as limiting.

Claims

1. A substrate processing apparatus for processing a substrate, characterized in that, have: A treatment tank for storing the treatment solution; A chamber that houses the processing tank; A pressure reducing pump, which reduces the pressure within the chamber; A lifter that moves the substrate up and down within the cavity while holding the substrate in place; An on / off valve that discharges the treatment liquid from the treatment tank; A solvent supply unit, which is a solvent supply unit provided in the chamber, is positioned higher than the opening formed on the upper surface of the processing tank, and supplies solvent of at least one shape, either mist or droplet, from the outside of the processing tank to the inside of the processing tank when viewed from above; and Control Department The control unit performs a solvent supply operation when the substrate is immersed in the processing liquid, that is, it causes the pressure-reducing pump to reduce the pressure in the chamber and supplies the solvent in at least one shape, either mist or droplets, from the solvent supply unit. When the chamber is under pressure and the solvent is being supplied, the control unit causes the lifter to remove the substrate from the processing liquid in the processing tank. Then, the processing liquid is discharged from the processing tank by opening the on / off valve. When the solvent is supplied, the control unit performs a substrate lifting operation. Specifically, the lifting device lowers the substrate to a position within the processing tank where no processing liquid is stored. The lifting device then keeps the substrate in a pre-set lower standby time within the processing tank. Afterward, the lifting device raises the substrate, and the lifting device keeps the substrate in a pre-set upper standby time at the raised position. The lower standby time is longer than the upper standby time.

2. The substrate processing apparatus according to claim 1, characterized in that, Perform the aforementioned substrate lifting and lowering operation multiple times.

3. A substrate processing apparatus for processing a substrate, characterized in that, have: A treatment tank for storing the treatment solution; A chamber that houses the processing tank; A pressure reducing pump, which reduces the pressure within the chamber; A lifter that moves the substrate up and down within the cavity while holding the substrate in place; An on / off valve that discharges the treatment liquid from the treatment tank; The solvent supply unit is a solvent supply unit provided in the chamber, which is positioned higher than the opening formed on the upper surface of the processing tank, and supplies solvent of at least one shape, either mist or droplet, from the outside of the processing tank to the inside of the processing tank when viewed from above. A hydrophobic agent nozzle supplies hydrophobic agent vapor into the chamber; and Control Department The control unit performs a solvent supply operation when the substrate is immersed in the processing liquid, that is, it causes the pressure-reducing pump to reduce the pressure in the chamber and supplies the solvent in at least one shape, either mist or droplets, from the solvent supply unit. When the chamber is under pressure and the solvent is being supplied, the control unit causes the lifter to remove the substrate from the processing liquid in the processing tank. Then, the processing liquid is discharged from the processing tank by opening the on / off valve. When the solvent is supplied, the control unit performs a substrate lifting operation, that is, the lifting device lowers the substrate to a position in the processing tank where the processing liquid is not stored, and then the lifting device raises the substrate. After the control unit performs the substrate lifting and lowering operation and stops the supply of solvent, it supplies the hydrophobic agent vapor to the substrate from the hydrophobic agent nozzle.

4. The substrate processing apparatus according to claim 3, characterized in that, After stopping the supply of the hydrophobic agent vapor, the control unit performs a second solvent supply operation, that is, it causes the pressure reducing pump to reduce the pressure in the chamber and supplies a solvent of at least one shape, either mist or droplet, from the solvent supply unit.

5. The substrate processing apparatus according to claim 4, characterized in that, The second solvent supply operation is performed when the elevator keeps the substrate in a standby position in the processing tank where the processing liquid is not stored.

6. The substrate processing apparatus according to claim 4, characterized in that, When the control unit performs the second solvent supply operation, the lifting device lowers the substrate to a position within the processing tank, and the lifting device keeps the substrate in a pre-set second standby time within the processing tank. Then, the lifting device raises the substrate, and the lifting device keeps the substrate in a pre-set second standby time at the raised position. The second standby time is longer than the second standby time.

7. A substrate processing method, which is a substrate processing apparatus comprising: A treatment tank for storing the treatment solution; A chamber that houses the processing tank; A pressure reducing pump, which reduces the pressure within the chamber; A lifter that moves the substrate up and down within the cavity while holding the substrate in place; and An on / off valve that discharges the treatment liquid from the treatment tank. The substrate processing method is characterized by comprising: In the solvent supply process, when the substrate is immersed in the processing liquid, the pressure reducing pump reduces the pressure in the chamber and supplies solvent of at least one shape, either mist or droplet, from the solvent supply unit. In the substrate removal process, when the chamber is under pressure and the solvent is being supplied, the lifter removes the substrate from the processing liquid in the processing tank. In the process of discharging the processing liquid, when the solvent is supplied and after the substrate removal process, the processing liquid is discharged from the processing tank by opening the on / off valve; and In the substrate lifting process, when the solvent is supplied, the lifting device lowers the substrate to a position in the processing tank where no processing liquid is stored. The lifting device then keeps the substrate in the processing tank for a preset lower standby time. Afterward, the lifting device raises the substrate, and the lifting device keeps the substrate in the raised position for a preset upper standby time. The solvent supply unit is located within the chamber. The solvent supply unit is positioned higher than the opening formed on the upper surface of the processing tank, and, when viewed from above, supplies the solvent in at least one shape, either mist or droplets, from the outside of the processing tank to the inside of the processing tank. The lower standby time is longer than the upper standby time.

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