Resonator and electronic device

Abstract

The invention provides a resonator and electronic equipment, and relates to the technical field of resonance. The resonator provided by the invention comprises a substrate, the substrate is provided with at least two cantilever beams, the two cantilever beams are symmetrically arranged relative to the center of the substrate, and each cantilever beam is provided with a first hole. The resonator structure provided by the invention is small in size, can excite the in-plane mode and the out-of-plane mode, and can achieve the switching of the two modes.

Description

Technical Field

[0001] The present application relates to the field of resonance technology, and in particular to a resonator and an electronic device. Background Art

[0002] Resonators play an important role in the field of micro-electromechanical systems and sensors. Traditional resonators are usually composed of a single structure, and their resonant frequency is mainly determined by fixed parameters of materials and geometric dimensions. Once the geometric structure of such resonators is determined, the excited mode is relatively fixed and single, and its application scenarios are limited. To solve this problem, researchers have proposed a variety of tunable resonator solutions, including capacitive tuning, thermal tuning, mechanical tuning, and electromagnetic tuning.

[0003] However, the applicant found that the real-time tuning effect of capacitor tuning is not good, the stability and accuracy of thermal tuning are insufficient, the structural loss of mechanical tuning is large, the long-term stability is insufficient, and the complexity and cost of electromagnetic tuning are high. Therefore, it is urgent to design a fast, reliable and simple modal tunable resonant structure. Summary of the invention

[0004] The present application provides a resonator and an electronic device. The resonator has a small structural volume and can flexibly switch between in-plane modes and out-of-plane modes.

[0005] In order to achieve the above objectives, this application provides the following technical solutions:

[0006] A first aspect of the present application provides a resonator, comprising: a substrate, on which at least two cantilever beams are disposed, the two cantilever beams are symmetrically arranged relative to the center of the substrate, and a first opening is disposed on the cantilever beam.

[0007] In a possible implementation manner, there are four cantilever beams, and the four cantilever beams are symmetrically arranged relative to the center of the substrate, and each of the cantilever beams is provided with the first opening.

[0008] In a possible implementation manner, a support beam is further provided between two adjacent cantilever beams, and the support beam is connected to the substrate.

[0009] In a possible implementation, the angle between the support beam and the cantilever beam is 45 degrees.

[0010] In a possible implementation, a bottom electrode, a piezoelectric layer and a top electrode are sequentially stacked on the substrate, the cantilever beam is arranged on the substrate, the bottom electrode, the piezoelectric layer and the top electrode, and the first opening passes through the substrate, the bottom electrode, the piezoelectric layer and the top electrode.

[0011] In a possible implementation manner, the resonator has a second opening, and the second opening passes through the bottom electrode, the piezoelectric layer, and the top electrode.

[0012] In a possible implementation, the second opening includes a central hole and peripheral holes, and the central hole passes through the substrate, the bottom electrode, the piezoelectric layer, and the top electrode;

[0013] The peripheral holes are located at the peripheral sides of the central hole, and the bottom electrode, the piezoelectric layer and the top electrode are penetrated by the peripheral holes.

[0014] In a possible implementation manner, a metal tuning layer is provided on a side of the top electrode facing away from the substrate, the metal tuning layer is located on a top layer of the cantilever beam, and a material of the metal tuning layer is silver, copper, gold or palladium.

[0015] In a possible implementation, a distance between the outermost sides of two opposite cantilever beams is less than or equal to 1.2 mm.

[0016] The resonator provided in the first aspect of the present application has at least the following beneficial effects:

[0017] By arranging two cantilever beams symmetrically along the center on the substrate and arranging a first opening on the cantilever beam, not only the stiffness of the cantilever beam can be changed, but also the switching between the in-plane mode and the out-of-plane mode of the cantilever beam can be realized by changing the shape and the opening position of the first opening. At the same time, the substrate structure between the cantilever beams can provide support for the cantilever beams and can also couple the cantilever beams to store a portion of the energy lost by the vibration of the cantilever beam when the cantilever beam resonates.

[0018] A second aspect of the present application provides an electronic device, comprising a resonator provided by any of the above technical solutions.

[0019] The beneficial effects of the electronic device provided by the second aspect of the present application have all the beneficial effects of the resonator provided by the first aspect of the present application, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0021] Figure 1 A schematic diagram of the overall structure of a resonator provided in an embodiment of the present application;

[0022] Figure 2 for Figure 1 A schematic diagram of the top view of the resonator;

[0023] Figure 3 for Figure 1 A schematic diagram of the side cross-sectional structure of the middle resonator;

[0024] Figure 4 The in-plane vibration mode diagram of the resonator provided in the embodiment of the present application at 1 MHz;

[0025] Figure 5 This is the out-of-plane vibration mode diagram of the resonator provided in an embodiment of the present application at 19.647 MHz.

[0026] Description of reference numerals:

[0027] 100, substrate;

[0028] 110. Cavity;

[0029] 200, cantilever beam;

[0030] 210, first opening;

[0031] 300, support beam;

[0032] 400, bottom electrode;

[0033] 500, piezoelectric layer;

[0034] 600, top electrode;

[0035] 700, second opening;

[0036] 710, center hole; 720, peripheral side holes;

[0037] 800. Metal tuning layer.

[0038] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0039] As described in the background technology, tunable resonators play an important role in the field of micro-electromechanical systems and sensors. In the related technology, there are many tuning methods for resonators, including capacitive tuning, thermal tuning, mechanical tuning and electromagnetic tuning. However, the applicant found that the real-time tuning effect of capacitive tuning is not good, the stability and accuracy of thermal tuning are insufficient, the structural loss of mechanical tuning is large, the long-term stability is insufficient, and the complexity and cost of electromagnetic tuning are high.

[0040] Among them, the applicant found that the above problems mainly occurred because:

[0041] The range of capacitor tuning is limited, and the capacitance changes slowly, which affects the real-time tuning effect. In addition, the complexity and manufacturing difficulty of the capacitor tuning structure are high, which limits its wide application. Thermal tuning has a larger tuning range, but its energy consumption is high, the response speed is slow, and thermal noise may affect the stability and accuracy of the resonator. Mechanical tuning can achieve a larger range of frequency adjustment, but the wear and fatigue problems of the mechanical moving parts limit its long-term stability and reliability, especially in high-frequency and high-precision applications. Mechanical tuning is difficult to implement. Although electromagnetic tuning is fast, it requires a complex electromagnetic control system, which increases the design and manufacturing costs, and the system complexity is high.

[0042] It should be noted that the resonant frequency of the resonator is changed by changing the capacitor. By changing the capacitance value, the resonant frequency can be adjusted within a certain range. Thermal tuning achieves frequency tuning by heating or cooling the resonator material to change its physical properties, such as Young's modulus. Mechanical tuning adjusts the frequency of the resonator by changing the mechanical structure, such as stretching, compression or bending. Electromagnetic tuning uses the electromagnetic field to act on the resonator to achieve frequency tuning through the Lorentz force or magnetostrictive effect.

[0043] Therefore, it is crucial to propose a fast, reliable, and simple modally tunable resonant structure for multi-scenario application of resonators.

[0044] In response to the above technical problems, an embodiment of the present application provides a resonator, which is configured by arranging two cantilever beams symmetrically along the center on a substrate and arranging a first opening on the cantilever beam, thereby not only changing the stiffness of the cantilever beam, but also changing the shape and opening position of the first opening to achieve switching between the in-plane mode and the out-of-plane mode of the cantilever beam. At the same time, the substrate structure between the cantilever beams can provide support for the cantilever beams and can also couple the cantilever beams to store a portion of the energy lost by the vibration of the cantilever beam when the cantilever beam resonates.

[0045] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work belong to the scope of protection of this application.

[0046] refer to Figures 1 to 5 The resonator provided in the embodiment of the present application includes a substrate 100, on which at least two cantilever beams 200 are provided. The two cantilever beams 200 are symmetrically arranged relative to the center of the substrate 100, and a first opening 210 is provided on the cantilever beam 200.

[0047] In this way, by arranging two cantilever beams 200 symmetrically along the center on the substrate 100 and arranging a first opening 210 on the cantilever beam 200, not only the stiffness of the cantilever beam 200 can be changed, but also the structural damping and energy distribution of the resonator can be changed, so that in-plane modes and out-of-plane modes can be stimulated. The in-plane mode and out-of-plane mode of the cantilever beam 200 can be switched by changing the shape and opening position of the first opening 210. At the same time, the substrate 100 structure between the cantilever beams 200 can provide support for the cantilever beams 200, and can also couple the cantilever beams 200 to store a portion of the energy lost by the vibration of the cantilever beam 200 when the cantilever beam 200 resonates.

[0048] For example, the cantilever beam 200 may be formed by etching on the substrate 100 , and the cavity 110 may be left on the substrate.

[0049] It is further understood that by opening a hole in the cantilever beam 200 to change its stiffness, the shape and position of the first opening 210 will affect the local stiffness of the cantilever beam 200. The in-plane mode (vibration in the plane) and the out-of-plane mode (vibration perpendicular to the plane) of the cantilever beam 200 are different vibration forms. By accurately designing the shape and position of the first opening 210, selective enhancement or suppression of these two modes can be achieved. Certain hole shapes and positions may increase the in-plane stiffness, thereby making the in-plane mode dominant; while other designs may reduce the in-plane stiffness and enhance the out-of-plane mode.

[0050] For example, the first opening 210 is an elliptical hole, which is along the length direction of the cantilever beam 200, close to the center side of the substrate 100, and the long axis of the elliptical hole is parallel to the length direction of the cantilever beam 200. Material is removed without significantly reducing the in-plane stiffness, thereby enhancing the in-plane mode. In another example, the first opening 210 is a diamond hole, which is located on the side of the cantilever beam 200 away from the substrate 100. The long diagonal of the diamond hole is parallel to the width direction of the cantilever beam 200, which can significantly reduce the in-plane stiffness while enhancing the out-of-plane mode.

[0051] In some embodiments, there are four cantilever beams 200 , which are symmetrically arranged relative to the center of the substrate 100 , and each of the cantilever beams 200 is provided with the first opening 210 .

[0052] In this way, four cantilever beams 200 are symmetrically arranged relative to the center of the substrate 100, which can further improve the vibration efficiency of the resonator. Moreover, the resonator body of the four cantilever beams 200 structure reduces the energy leakage of the resonator and improves the device quality factor (Q).

[0053] Furthermore, the shape of the first opening 210 is rectangular, triangular or rhombus, and the shapes of the first opening 210 on each cantilever beam 200 can be the same or different. The first opening 210 can be opened in the middle of the cantilever beam 200, or can be located on a side close to the center of the substrate 100. The first opening 210 can also be opened on a side of the cantilever beam 200 away from the center of the substrate 100.

[0054] In some embodiments, a support beam 300 is further provided between two adjacent cantilever beams 200, and the support beam 300 is connected to the substrate 100. Exemplarily, the support beam 300 can be formed by etching a multilayer structure including a stacked substrate 100, a bottom electrode 400, a piezoelectric layer 500 and a top electrode 600, that is, the support beam 300 structure is formed by etching between two adjacent cantilever beams 200. In other words, the cantilever beam 200 is arranged on the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600, and the support beam 300 is only arranged on the substrate 100.

[0055] Furthermore, the length of the support beam 300 in its own extension direction is smaller than the length of the cantilever beam 200 along its own extension direction. Furthermore, the length of the support beam 300 is 158-168 μm, for example, the length of the support beam 300 is 158 μm, or the length of the support beam 300 is 168 μm, or the length of the support beam 300 is 162 μm.

[0056] In some embodiments, the angle between the support beam 300 and the cantilever beam 200 is 45 degrees.

[0057] In this way, the design of the inclined short support beam 300 can not only provide structural support for the cantilever beams 200 on both sides to ensure their resonance stability, but also can form an irregular outer contour of the resonator compared to the solution in which the support beam 300 is arranged parallel to the cantilever beam 200. The support beam 300 is shorter than the cantilever beam 200, and the resonator as a whole has a smaller structural volume, wherein the outer contour of the resonator is formed by etching.

[0058] In some embodiments, a bottom electrode 400, a piezoelectric layer 500 and a top electrode 600 are sequentially stacked on a substrate 100, a cantilever beam 200 is disposed on the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600, and a first opening 210 penetrates the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600.

[0059] Exemplarily, the substrate 100 is a silicon layer, the bottom electrode 400 is a molybdenum bottom electrode 400, the piezoelectric layer 500 is an aluminum nitride piezoelectric layer 500, and the top electrode 600 is a molybdenum top electrode 600. In this way, the resonator formed by the composition structure can significantly improve the electromechanical conversion efficiency, frequency stability, mechanical strength, quality factor and thermal stability of the resonator, while maintaining compatibility with existing manufacturing processes. Specifically, aluminum nitride (AlN) is a material with good piezoelectric properties, which can efficiently convert electrical signals into mechanical vibrations. Molybdenum (Mo) has high conductivity and high temperature stability, and can provide a low resistance path, thereby reducing power loss. In addition, the thermal expansion coefficient of molybdenum is similar to that of aluminum nitride and silicon, which helps to maintain the stability of the structure when the temperature changes and reduce the frequency drift caused by thermal stress. Due to the low internal friction characteristics of molybdenum and aluminum nitride, this material combination can achieve a high quality factor (Q value), that is, the energy loss of the resonator during vibration is low, thereby improving the frequency selectivity and signal purity of the resonator; this material combination is compatible with standard semiconductor manufacturing processes and is easy to integrate into existing microelectronic systems. This helps reduce manufacturing costs and improve system integration and reliability.

[0060] It should be noted that a conductive pad, i.e., a conductive pad, is provided on the substrate 100, which is used to provide input and output paths for electrical signals. Specifically, the conductive pad transmits external electrical signals to the bottom electrode 400 and the top electrode 600 of the cantilever beam 200 resonator through the conductive path, thereby stimulating the resonator to work. Furthermore, the conductive pad can also provide certain mechanical support to ensure the stability and correct alignment of the electrodes and other layers. In addition, the conductive pad is usually connected to an external circuit, and electrical connection may be achieved through welding, bonding or other means, so as to transmit electrical signals to an external measurement or control system.

[0061] That is, the bottom electrode 400 and the top electrode 600 are connected to the conductive pad on the substrate 100 through the support beam 300. The conductive pad is the connection point between the electrode and the external circuit. By applying an electrical signal through the conductive pad, the working state of the cantilever beam 200 resonator can be controlled.

[0062] Exemplarily, the material of the conductive pad is a highly conductive metal, such as gold, silver, aluminum or copper, to ensure good electrical conductivity and reliable electrical connection.

[0063] In some embodiments, the resonator has a second opening 700, and the second opening 700 passes through the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600. In this way, by setting the second opening 700 passing through the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600, a wiring space is left, so that the bottom electrode 400 and the top electrode 600 are easily connected to the conductive pad of the substrate 100 by wire.

[0064] In some embodiments, the second opening 700 includes a central hole 710 and peripheral holes 720, wherein the central hole 710 passes through the substrate 100, the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600; the peripheral holes 720 are located around the central hole 710, and the peripheral holes 720 pass through the bottom electrode 400, the piezoelectric layer 500 and the top electrode 600.

[0065] In this case, the setting of the center hole 710 can not only reduce the overall structural stiffness of the resonator, but also serve as a frequency adjustment structure. Specifically, during the design process, the frequency of the resonator can be fine-tuned by adjusting the size of the hole.

[0066] In some embodiments, a metal tuning layer is provided on the side of the top electrode 600 facing away from the substrate 100, the metal tuning layer is connected to the top electrode 600, the metal tuning layer and the top electrode 600 are made of different materials, the metal tuning layer is located on the top layer of the cantilever beam 200, the material of the metal tuning layer is silver, or the material of the metal tuning layer is copper, or the material of the metal tuning layer is gold, or the material of the metal tuning layer is palladium.

[0067] Exemplarily, a layer of metallic silver is coated on the top surface of the cantilever beam 200 by magnetron sputtering.

[0068] In this case, a metal tuning layer is provided on the top surface of the cantilever beam 200, and the load of the metal tuning layer can affect the resonant frequency of the cantilever beam 200. The metal on the top surface can be removed by plasma impact to achieve more accurate frequency tuning of the resonator. For example, if there is a slight deviation between the actual frequency of the resonant device product and the required frequency, it can be fine-tuned by partially removing the metal tuning layer.

[0069] In some embodiments, the distance between the outermost sides of two relative cantilever beams 200 is less than or equal to 1.2 mm. Exemplarily, the distance between the outermost sides of two relative cantilever beams 200 is 1 mm. Thus, the rectangular area formed by the lines extending in the direction of the outermost edges of the cantilever beams 200 is 1 square millimeter, which is less than 1.2 mm*1.2 mm. This structure is conducive to subsequent packaging. Furthermore, a single cantilever beam has limited degrees of freedom and limited excitation modes. That is, compared with the single vibration mode of a traditional cantilever beam resonator, the mode of the resonator in the embodiment of the present application is adjustable. Specifically, it can achieve switching between in-plane mode and out-of-plane mode by adjusting the size and position of the first opening on the cantilever beam. At the same time, the presence of the first opening can also reduce the stiffness of the cantilever beam, making the resonator device working at a low frequency smaller in size. Figure 3 The figure shows the in-plane vibration mode diagram of the resonator of the embodiment of the present application at 1 MHz. Figure 4 The figure shows the out-of-plane vibration mode diagram of the resonator according to the embodiment of the present application at 19.647 MHz.

[0070] It should be noted that the in-plane mode and the out-of-plane mode have different application scenarios. The in-plane mode is very sensitive to the changes in physical quantities (such as acceleration and force) in the plane, and because the direction of movement is parallel to the substrate, the air damping is low and it is easy to achieve a high Q value. It can be used in application scenarios such as acceleration sensors and gyroscopes; the out-of-plane mode has a larger amplitude, which is suitable for detecting tiny external disturbances, can support higher vibration frequencies, and is suitable for high-frequency application scenarios, such as pressure sensors and filters. The resonator is in the in-plane mode ( Figure 3 ), the cantilever beam vibrates in a direction parallel to the plane of the screen and deforms in that direction. The resonator is in the out-of-plane mode ( Figure 4 ), the cantilever beam deforms in a direction perpendicular to the screen plane.

[0071] In the second aspect, an embodiment of the present application provides an electronic device, including the resonator provided by any embodiment of the first aspect, and also has all the beneficial effects of any embodiment of the first aspect, which will not be repeated.

[0072] Electronic devices include cars, tablets, smartphones, headphones, hearing aids, drones or robots.

[0073] In the description of the present application, it should be understood that the terms "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0074] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0075] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0076] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0077] The various embodiments or implementation methods in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referenced to each other.

[0078] It should be noted that the embodiments represented by "one embodiment", "an embodiment", "an exemplary embodiment", "some embodiments", etc. mentioned in the specification may include specific features, structures or characteristics, but not every embodiment may include the specific features, structures or characteristics. In addition, such phrases do not necessarily refer to the same embodiment. In addition, when describing specific features, structures or characteristics in conjunction with an embodiment, it is within the knowledge of those skilled in the art to implement such features, structures or characteristics in conjunction with other embodiments that are explicitly or not explicitly described.

[0079] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A resonator, characterized in that: include: A substrate (100) is provided with at least two cantilever beams (200), the two cantilever beams (200) are symmetrically arranged relative to the center of the substrate (100), and the cantilever beams (200) are provided with a first opening (210).

2. The resonator according to claim 1, characterized in that There are four cantilever beams (200), and the four cantilever beams (200) are symmetrically arranged relative to the center of the substrate (100), and each of the cantilever beams (200) is provided with the first opening (210).

3. The resonator according to claim 2, characterized in that A support beam (300) is further provided between two adjacent cantilever beams (200), and the support beam (300) is connected to the substrate (100).

4. The resonator according to claim 3, characterized in that The angle between the support beam (300) and the cantilever beam (200) is 45 degrees.

5. The resonator according to any one of claims 1 to 4, characterized in that: A bottom electrode (400), a piezoelectric layer (500) and a top electrode (600) are sequentially stacked on the substrate (100); the cantilever beam (200) is arranged on the substrate (100), the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600); and the first opening (210) penetrates the substrate (100), the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600).

6. The resonator according to claim 5, characterized in that The resonator has a second opening (700), and the second opening (700) penetrates the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600).

7. The resonator according to claim 6, characterized in that The second opening (700) comprises a central hole (710) and peripheral holes (720), and the central hole (710) penetrates the substrate (100), the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600); The peripheral hole (720) is located on the peripheral side of the central hole (710), and the peripheral hole (720) penetrates the bottom electrode (400), the piezoelectric layer (500) and the top electrode (600).

8. The resonator according to claim 5, characterized in that A metal tuning layer is provided on the side of the top electrode (600) facing away from the substrate (100); the metal tuning layer is located on the top layer of the cantilever beam (200); and the material of the metal tuning layer is silver, copper, gold or palladium.

9. The resonator according to any one of claims 1 to 4, characterized in that: The distance between the outermost sides of the two opposite cantilever beams (200) is less than or equal to 1.2 mm.

10. An electronic device, characterized in that: Comprising a resonator as claimed in any one of claims 1 to 9.

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