Gas phase annealing method of tellurium-zinc-cadmium crystal

By performing point defect detection and gas-phase source film preparation on zinc tellurium crystals, combined with multi-temperature segment annealing furnace and diffusion pipeline design, the gas pressure and diffusion amount of the gas phase source are accurately controlled, and the problem of difficult to accurately control the gas phase source during gas phase annealing of zinc tellurium crystals is significantly improved, and the electrical properties and overall quality of the crystal are significantly improved.

CN119685937APending Publication Date: 2025-03-25SHANGHAI UNIV
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Patent Information

Application Number
CN202411632614.1
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-15
Publication Date
2025-03-25

AI Technical Summary

Technical Problem

During the gas-phase annealing process, the gas-phase source of zinc tellurium crystals is difficult to accurately control, resulting in internal defects of the crystal and affecting its electrical and optical properties.

Method used

By detecting the type of point defects and defect concentrations inside the zinc tellurium cadmium tellurium wafer, the types and content of gas phase sources required for annealing regulation are determined, and a gas phase source film is prepared on a quartz sheet. Combined with the multi-temperature segment annealing furnace and diffusion pipeline design, the gas pressure and diffusion amount of the gas phase source are accurately controlled.

Benefits of technology

It significantly reduces the internal defects of zinc tellurium crystals, improves its electrical properties, enhances the overall quality and performance of the crystals, and meets the application needs of high-performance zinc tellurium crystals in electronics and optical devices.

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Abstract

The invention relates to a gas phase annealing method of a cadmium zinc telluride crystal. The gas phase annealing method comprises the following steps: S1, detecting the type and the defect concentration of point defects in the cadmium zinc telluride crystal; s2, determining a corresponding gas phase source for annealing regulation and control according to a point defect detection result; s3, preparing a gas phase source film on the quartz plate through physical vapor deposition; s4, confirming the gas phase source gas pressure of annealing; and S5, respectively packaging the tellurium-zinc-cadmium wafer and the quartz plate deposited with the gas-phase source film at two ends of an annealing quartz tube, then placing the annealing quartz tube in an annealing furnace, respectively heating the two ends of the annealing quartz tube, and finally obtaining the CdZnTe crystal modified by gas-phase annealing. Compared with the prior art, the method has the advantages that the variety and content of the gas phase source can be regulated and controlled, and finally the tellurium-zinc-cadmium crystal of which the internal defects are remarkably reduced and the electrical property of the crystal is remarkably improved is obtained.
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