Chip module, electronic device and electronic circuit

Abstract

The invention provides a chip module, an electronic device and an electronic circuit, according to the chip module, a plurality of series structures are arranged on a substrate, and then a plurality of flip chips are mounted at corresponding positions on the substrate, so that the chip module serving as a small high-voltage structure is realized. Wherein each series structure comprises a plurality of substrate electrode units, each substrate electrode unit comprises an anode substrate electrode and a cathode substrate electrode, and each cathode substrate electrode is electrically connected with the anode substrate electrode in the next substrate electrode unit. According to a small high-voltage structure in the prior art, a plurality of units are connected in series in a chip, so that grooves crossing the units may cause circuit failure due to non-uniform filling, the chip module realizes series connection of a plurality of substrate electrode units on a smooth substrate, risks in the prior art are avoided, and the reliability of the chip module is improved. Therefore, the reliability of the chip module as the small high-voltage structure is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device preparation, and in particular to a chip module, an electronic device and an electronic circuit. Background Art

[0002] The small high voltage structure is achieved by dividing a large chip into multiple small units during the chip preparation process, and then connecting the multiple small units in series through electrodes.

[0003] However, the small high-voltage structures in the prior art usually have poor insulation problems during the electrode interconnection process and the risk of circuit failure caused by uneven coverage of the interconnected electrodes on uneven dividing lines.

[0004] Therefore, how to improve the reliability of small high voltage structures has become a technical problem that needs to be solved urgently in the industry. Summary of the invention

[0005] The present invention provides a chip module, which solves the problem of low reliability of small and high voltage structures in the prior art.

[0006] According to a first aspect of the present invention, there is provided a chip module, comprising:

[0007] substrate;

[0008] A plurality of series structures, wherein the plurality of series structures are arranged on the surface of the substrate, each of the series structures comprises a plurality of substrate electrode units, each of the substrate electrode units comprises an anode substrate electrode and a cathode substrate electrode, and each of the cathode substrate electrodes is electrically connected to an anode substrate electrode in a next substrate electrode unit;

[0009] A plurality of flip chips, each of which corresponds to a substrate electrode unit, a first electrode of the flip chip is electrically connected to a corresponding anode substrate electrode, and a second electrode of the flip chip is electrically connected to a corresponding cathode substrate electrode.

[0010] Optionally, the anode substrate electrode and the cathode substrate electrode are both convex structures.

[0011] Optionally, the substrate includes at least a PCB board, a TFT circuit board or a ceramic substrate.

[0012] Optionally, the flip chip structure includes:

[0013] a light-emitting layer, the light-emitting layer being located on a first region of the second surface of the first semiconductor layer;

[0014] a second semiconductor layer, wherein the second semiconductor layer is located on the light emitting layer;

[0015] a second semiconductor layer, wherein the second semiconductor layer is located on the light emitting layer;

[0016] a metal reflective layer, wherein the metal reflective layer is located on the second semiconductor layer;

[0017] A first electrode and a second electrode, wherein the first electrode is located on a surface of the metal reflective layer, and the second electrode is located on a second region of a second surface of the first semiconductor layer.

[0018] Optionally, the light-emitting layer is a multi-quantum well.

[0019] Optionally, the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the first electrode is a P-type electrode, and the second electrode is an N-type electrode.

[0020] Optionally, the first surface of the first semiconductor layer is a roughened surface, and the first surface of the first semiconductor layer is opposite to the second surface of the first semiconductor layer.

[0021] Optionally, the material of the first semiconductor layer and the second semiconductor layer is gallium nitride.

[0022] According to a second aspect of the present invention, there is provided an electronic device comprising the chip module.

[0023] According to a third aspect of the present invention, there is provided an electronic circuit comprising the electronic device.

[0024] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:

[0025] In a chip module provided by the present invention, a plurality of series structures are arranged on a substrate, and then a plurality of flip-chips are mounted at corresponding positions on the substrate to realize a chip module as a small high voltage structure. Each series structure includes a plurality of substrate electrode units, each substrate electrode unit includes an anode substrate electrode and a cathode substrate electrode, and each cathode substrate electrode is electrically connected to the anode substrate electrode in the next substrate electrode unit. Since the small high voltage structure of the prior art is to connect multiple units in series inside the chip, the grooves spanning between the units may cause circuit failure due to uneven filling, while the chip module of the present invention realizes the series connection of several substrate electrode units on a smooth substrate, avoiding the risks existing in the prior art, thereby improving the reliability of the chip module as a small high voltage structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic diagram of a chip module structure provided by an embodiment of the present invention;

[0027] Figure 2is along Figure 1 A schematic diagram of the cross-sectional structure along the A1-A2 direction is shown.

[0028] Reference numerals:

[0029] 1-Substrate;

[0030] 2-Flip chip;

[0031] 3- anode substrate electrode;

[0032] 4- cathode substrate electrode;

[0033] 5-tandem structure;

[0034] 201- first semiconductor layer;

[0035] 202- first electrode;

[0036] 203 - second electrode;

[0037] 204-metal reflective layer;

[0038] 205- second semiconductor layer;

[0039] 206-light-emitting layer. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the embodiments in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present invention. The terms "first", "second", "third", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0041] As described in the background art, small high-voltage structures usually have poor insulation problems in the electrode interconnection process and the risk of line failure caused by uneven coverage of interconnected electrodes on uneven boundary lines.

[0042] The following takes a high voltage light emitting diode embodiment as an example to analyze in detail the problems existing in the manufacturing process of the existing small high voltage structure.

[0043] Generally, a small high voltage structure is achieved by using a deep groove etching method to divide a large chip into multiple small units during the chip preparation process, then filling the grooves with an insulating layer, and finally depositing a wire material to form a wire to connect multiple small units in series through electrodes. However, due to the problem of poor insulation in the electrode interconnection process and the risk of line failure caused by uneven coverage of the interconnected electrodes on the uneven dividing line, the small high voltage structure in the prior art is not highly reliable during the manufacturing process.

[0044] In view of this, the present invention creatively proposes a chip module.

[0045] in, Figure 1 It is a schematic diagram of the chip module structure provided by an embodiment of the present invention.

[0046] Please refer to Figure 1 , an embodiment of the present invention provides a chip module, comprising:

[0047] substrate1;

[0048] A plurality of series structures 5, wherein the plurality of series structures 5 are arranged on the surface of the substrate 1, each of the series structures 5 comprises a plurality of substrate electrode units, each of the substrate electrode units comprises an anode substrate electrode 3 and a cathode substrate electrode 4, and each of the cathode substrate electrodes 4 is electrically connected to the anode substrate electrode 3 in the next substrate electrode unit;

[0049] There are several flip chips 2, each of which corresponds to a substrate electrode unit. The first electrode 202 of the flip chip 2 is electrically connected to the corresponding anode substrate electrode 3, and the second electrode 203 of the flip chip 2 is electrically connected to the corresponding cathode substrate electrode 4.

[0050] The chip module provided by the present invention realizes the small high voltage structure of the chip by setting a series structure 5 on a smooth and flat substrate 1, thereby avoiding the risk of line failure caused by crossing the grooves between each small unit during the electrode interconnection process in the prior art, thereby improving the reliability of the chip module as a small high voltage structure.

[0051] Each of the series structures 5 is used as a small high voltage structure, and since different series structures 5 can connect different numbers of substrate electrode units in series, the voltage values ​​of different small high voltage structures will also be different. The number of series structures 5 and the number of substrate electrode units in different series structures 5 can be set according to actual needs, and will not be elaborated here.

[0052] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0053] As a specific implementation, the anode substrate electrode 3 and the cathode substrate electrode 4 are both convex structures. Of course, there are many structures of the anode substrate electrode 3 and the cathode substrate electrode 4, and the present invention is not limited here.

[0054] As a specific implementation, the substrate 1 at least includes a PCB board, a TFT circuit board or a ceramic substrate. Any substrate that can be provided with a series structure 5 on its surface is within the protection scope of the present invention.

[0055] in, Figure 2 yes Figure 1 Schematic diagram of the cross-sectional structure shown along the A1-A2 direction.

[0056] Please refer to Figure 2 As an example, the flip chip 2 is an LED flip chip, comprising:

[0057] First semiconductor layer 201 .

[0058] The first semiconductor layer 201 may be, for example, an N-type semiconductor layer.

[0059] Preferably, the first surface of the first semiconductor layer is a roughened surface; the roughened surface can change the propagation path of light, so that the light that originally meets the total reflection condition is no longer completely reflected back into the chip, but partially scattered, thereby improving the light extraction efficiency. Among them, there are many specific structures of the roughened surface, and technicians in this field can choose according to actual conditions, and the present invention does not limit this.

[0060] The light emitting layer 206 is located on the first region of the second surface of the first semiconductor layer 201, and the first surface of the first semiconductor layer 201 is opposite to the second surface of the first semiconductor layer 201. Specifically, the light emitting layer 206 can be, for example, a multi-quantum well. Of course, there are many kinds of materials for the light emitting layer 206, which are not limited in the present invention.

[0061] The second semiconductor layer 205 is located on the light emitting layer 206 ; the second semiconductor layer 205 may be, for example, a P-type semiconductor layer.

[0062] The metal reflective layer 204 is located on the second semiconductor layer 205 .

[0063] Specifically, the metal reflective layer 204 is usually a highly conductive metal material, such as aluminum, silver, gold, copper, etc. These metals have high reflectivity and good optical properties, and are suitable for reflection requirements of different bands. Those skilled in the art can select the material of the metal reflective layer 204 according to actual conditions, and the present invention does not limit this.

[0064] A first electrode 202 and a second electrode 203, wherein the first electrode 202 is located on the surface of the metal reflective layer 204, and the second electrode 203 is located on the second region of the second surface of the first semiconductor layer 201; wherein the first electrode 202 is a P-type electrode, and the second electrode 203 is an N-type electrode.

[0065] Specifically, the first electrode 202 and the second electrode 203 are usually made of metal, transparent conductive oxide or carbon nanomaterial, etc. Their main function is to serve as channels for current input and output, ensuring that the current can be efficiently transmitted to the LED chip, thereby achieving light emission. Among them, electrodes of different materials have different effects on the performance of the LED chip, so the selection of the electrode material needs to be determined according to actual conditions, and the present invention does not limit this.

[0066] As an example, the material of the first semiconductor layer 201 and the second semiconductor layer 205 may be gallium nitride. Of course, there are many other materials for the first semiconductor layer 201 and the second semiconductor layer 205, and the present invention is not limited thereto.

[0067] The flip chip may further include a growth substrate, and the growth substrate is located on the first surface of the first semiconductor layer 201. Of course, there are many types of flip chips besides LED flip chips, and those skilled in the art can select according to actual conditions.

[0068] The following Figure 1 Taking the schematic diagram of the chip module structure shown as an example, the working principle of the chip module provided by the present invention is explained.

[0069] Please refer to Figure 1, a plurality of series structures 5 are arranged on the substrate 1, each of the series structures 5 includes a plurality of substrate electrode units, each of the substrate electrode units includes an anode substrate electrode 3 and a cathode substrate electrode 4, the cathode substrate electrode 4 in each substrate electrode unit is electrically connected to the anode substrate electrode 3 in the next substrate electrode unit, and the flip chips 2 are mounted on the substrate electrode units one by one to form a chip module as a small high voltage structure. Wherein, each small high voltage structure includes a series structure 5 and a plurality of flip chips 2 electrically connected to the substrate electrode units in the series structure 5, then the driving voltage of the small high voltage structure, that is, the voltage between the anode substrate electrode 3 in the first substrate electrode unit and the cathode substrate electrode 4 in the last substrate electrode unit, is the sum of the voltages of the plurality of flip chips 2. Therefore, when the positive pole of the power supply is connected to the anode substrate electrode 3 in the small high voltage structure, and the negative pole of the power supply is connected to the cathode substrate electrode 4 in the small high voltage structure, the small high voltage structure is connected to the power supply voltage. If the power supply voltage is greater than or equal to the sum of the voltages of the flip chips 2, the small high voltage structure can be driven successfully. On the contrary, if the power supply voltage is less than the sum of the voltages of the flip chips 2, the small high voltage structure cannot be driven.

[0070] In summary, in a chip module provided by the present invention, a plurality of series structures are arranged on a substrate, and then a plurality of flip-chips are mounted at corresponding positions on the substrate to realize a chip module as a small high voltage structure. Each series structure includes a plurality of substrate electrode units, each substrate electrode unit includes an anode substrate electrode and a cathode substrate electrode, and each cathode substrate electrode is electrically connected to the anode substrate electrode in the next substrate electrode unit. Since the small high voltage structure of the prior art is to connect multiple units in series inside the chip, the grooves spanning between the units may cause circuit failure due to uneven filling, while the chip module of the present invention realizes the series connection of several substrate electrode units on a smooth substrate, avoiding the risks existing in the prior art, thereby improving the reliability of the chip module as a small high voltage structure.

[0071] An embodiment of the present invention further provides an electronic device, which includes the chip module.

[0072] An embodiment of the present invention further provides an electronic circuit, wherein the electronic device includes the electronic device.

[0073] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A chip module, characterized in that: include: substrate; A plurality of series structures, wherein the plurality of series structures are arranged on the surface of the substrate, each of the series structures comprises a plurality of substrate electrode units, each of the substrate electrode units comprises an anode substrate electrode and a cathode substrate electrode, and each of the cathode substrate electrodes is electrically connected to an anode substrate electrode in a next substrate electrode unit; A plurality of flip chips, each of which corresponds to a substrate electrode unit, a first electrode of the flip chip is electrically connected to a corresponding anode substrate electrode, and a second electrode of the flip chip is electrically connected to a corresponding cathode substrate electrode.

2. The chip module according to claim 1, characterized in that: The anode substrate electrode and the cathode substrate electrode are both convex point structures.

3. The chip module according to claim 1, characterized in that: The substrate at least includes a PCB board, a TFT circuit board or a ceramic substrate.

4. The chip module according to claim 1, characterized in that: The flip chip structure comprises: a first semiconductor layer; a light-emitting layer, the light-emitting layer being located on a first region of the second surface of the first semiconductor layer; a second semiconductor layer, wherein the second semiconductor layer is located on the light emitting layer; a metal reflective layer, wherein the metal reflective layer is located on the second semiconductor layer; A first electrode and a second electrode, wherein the first electrode is located on a surface of the metal reflective layer, and the second electrode is located on a second region of a second surface of the first semiconductor layer.

5. The chip module according to claim 4, characterized in that: The light-emitting layer is a multi-quantum well.

6. The chip module according to claim 4, characterized in that: The first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the first electrode is a P-type electrode, and the second electrode is an N-type electrode.

7. The chip module according to claim 4, characterized in that: The first surface of the first semiconductor layer is a roughened surface, and the first surface of the first semiconductor layer is opposite to the second surface of the first semiconductor layer.

8. The chip module according to claim 4, characterized in that: The material of the first semiconductor layer and the second semiconductor layer is gallium nitride.

9. An electronic device, characterized in that: The electronic device comprises the chip module as described in any one of claims 1-8.

10. An electronic circuit, characterized in that: The electronic circuit comprises the electronic device according to claim 9.

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