An integrated hydrogen sensing microsystem, manufacturing method, and data processing method

Abstract

An integrated hydrogen sensing microsystem, a manufacturing method, and a data processing method. Belonging to the technical field of integrated hydrogen sensing microsystems. The present invention solves the problem of accurate detection of a wide range that is difficult to solve with a single principle in current hydrogen detection. The alumina ceramic substrate of the present invention is covered with a first semiconductor principle electrode, a second semiconductor principle electrode, and a catalytic principle heating sensitive electrode. The first semiconductor principle electrode is connected to a first platinum pad, and the catalytic principle heating sensitive electrode is connected to a second platinum pad and a third platinum pad. A sensitive semiconductor blackbody silicon carbide anti-infrared radiation packaging layer is formed on the first semiconductor principle electrode and the second semiconductor principle electrode by a semiconductor principle sensitive material, and a sensitive catalytic body blackbody silicon carbide anti-infrared radiation packaging layer is formed on the catalytic principle heating sensitive electrode by a catalytic principle sensitive material. The integrated hydrogen sensing microsystem, the manufacturing method, and the data processing method of the present invention realize wide-range detection of hydrogen concentration.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated hydrogen sensor microsystems, and in particular relates to a hydrogen sensor microsystem, a manufacturing method, and a data processing method. Background Art

[0002] The world's energy landscape is undergoing profound changes, ushering in a new round of energy transition characterized by clean, low-carbon development. New energy transportation, represented by hydrogen, is poised to replace traditional oil and gas transportation energy sources. It is rapidly penetrating into gas-fired power generation, distributed energy supply, microgrids, and multi-energy hybrids, driving improvements in efficiency and environmental friendliness across all aspects of energy production and transportation. Hydrogen is widely available and boasts high energy density, high conversion efficiency, and cleanliness. As a zero-carbon energy source, hydrogen is a typical secondary energy source, with energy properties similar to electricity but superior in storability. Hydrogen will reduce CO2 emissions. However, unlike traditional petroleum fuels, which are easily transportable and scalable, current hydrogen storage and transportation technologies have yet to address energy efficiency and safety issues. Furthermore, the widely used high-pressure hydrogen transport system suffers from low hydrogen storage density and high compression energy consumption, making large-scale, long-distance transportation unsuitable. Therefore, the safe use of hydrogen requires the protection of hydrogen sensors.

[0003] Currently, research is focused on hydrogen sensing microsystems based on manufacturing. However, relying on a single principle to detect hydrogen is difficult to achieve accurate detection over a wide range. Therefore, this application proposes a hydrogen sensor microsystem, a manufacturing method, and a data processing method. Summary of the Invention

[0004] The purpose of this invention is to address the current difficulty in accurately detecting hydrogen gas over a wide range using a single principle. A brief overview of the invention is provided below to provide a basic understanding of certain aspects of the invention. It should be understood that this overview is not an exhaustive overview of the invention. It is not intended to identify key or important aspects of the invention, nor is it intended to limit the scope of the invention.

[0005] The technical solution of the present invention:

[0006] Solution 1: A method for manufacturing an integrated hydrogen sensing microsystem, comprising the following steps:

[0007] Step 1: Using masked electrochemical micro-additive manufacturing technology, on a three-degree-of-freedom motion platform, powered by a constant voltage-pulse power supply, high-purity aluminum foil is electrochemically oxidized in an acidic electrolyte to produce an alumina ceramic chip with a nanopore array;

[0008] Step 2: Using a replacement reaction involving mercuric chloride, the chip is peeled off from the aluminum foil substrate, and a 1nm to 10nm barrier layer in the sensitive area of ​​the chip is etched away using a subtractive manufacturing process to form a transparent nanopore array alumina ceramic functional body in the sensitive area of ​​the chip;

[0009] Step 3: Prepare a tin nitrate solution with a concentration of 3 mol% to 7 mol%, age it for 24 hours, use ammonia as a precipitant to form a semiconductor tin dioxide material, mix it with the two-dimensional MXene quantum dot solution, and vacuum dry it to form a two-dimensional MXene quantum dot-modified tin dioxide hydrogen semiconductor nano-sensitive material;

[0010] Step 4: preparing a palladium chloride and rhodium chloride catalyst solution, heating and adding nitric acid to dissolve the palladium chloride and rhodium chloride reagents to form an acidic catalyst solution, and aging to form a catalyst solution;

[0011] Step 5: Immerse the transparent nanopore array alumina ceramic functional carrier chip in a solution of aluminum nitrate and two-dimensional MXene quantum dots, vacuum dry, and then place it in a solution of precious metal salts of iridium, rhodium, and palladium catalysts. Vacuum filter, remove the chip, and perform high-temperature heat treatment under nitrogen protection to remove chloride ions, forming a catalytic hydrogen-sensitive chip with quantum dot characteristics.

[0012] Step 6: Make a hollow electrode mask, use sputtering process to form a platinum-sensitive heating electrode on the chip, and form a stable platinum-sensitive heating electrode after heat treatment;

[0013] Step 7: Using a dispensing process, the two-dimensional MXene quantum dot-modified tin dioxide sensitive material is coated on the chip and subjected to high-temperature heat treatment under nitrogen protection;

[0014] Step 8: Using a spraying process to form a particle-sized black body silicon carbide infrared radiation protection packaging layer on the platinum electrode of the chip, and then fixing the silicon carbide layer through high-temperature heat treatment;

[0015] Step 9: Using the slurry sintering process, the leads are soldered to the chip through the platinum slurry;

[0016] Step 10: Assemble the chip using a standard tube socket, weld the leads, and assemble the cap to form an integrated hydrogen sensing microsystem.

[0017] Furthermore, in the step 4, the palladium: rhodium molar ratio of the acidic catalyst solution is 3:1, the comprehensive concentration is 2% to 4%, and the prepared acidic catalyst solution is treated at 70°C to 90°C for 1h to 2h to fully dissolve the acidic catalyst solution, and then the acidic catalyst solution is aged for more than 24h to form a catalyst solution.

[0018] Furthermore, in the step five, the chip is taken out and subjected to high temperature treatment at 700° C. under nitrogen protection, and the formed catalytic hydrogen sensitive chip has quantum dot features of 5 nm to 10 nm.

[0019] Furthermore, in step six, a 1 μm to 2 μm platinum sensitive heating electrode is formed on the chip, and the heat treatment temperature is 900° C. to 1100° C.

[0020] Furthermore, in step seven, the high temperature heat treatment temperature is 600°C.

[0021] Furthermore, in the step eight, the size of the formed black body silicon carbide infrared radiation protection packaging layer is 10 μm to 20 μm, and the thickness is 30 nm to 90 nm.

[0022] Option 2: An integrated hydrogen sensor microsystem, which is manufactured by the manufacturing method of an integrated hydrogen sensor microsystem described in Option 1, includes an alumina ceramic substrate, the alumina ceramic substrate has a triangular structure, and is processed with a first wire hole, a second wire hole and a third wire hole. The alumina ceramic substrate is covered with a first semiconductor principle electrode, a second semiconductor principle electrode and a catalytic principle heating sensitive electrode. The first semiconductor principle electrode is connected to a first platinum pad, and the first platinum pad is arranged in the first wire hole. The catalytic principle heating sensitive electrode is connected to a second platinum pad and a third platinum pad, and the second platinum pad is arranged in the second wire hole, and the third platinum pad is arranged in the third wire hole. A sensitive semiconductor black body silicon carbide anti-infrared radiation packaging layer is formed on the first semiconductor principle electrode and the second semiconductor principle electrode by a semiconductor principle sensitive material, and a sensitive catalytic body black body silicon carbide anti-infrared radiation packaging layer is formed on the catalytic principle heating sensitive electrode by a catalytic principle sensitive material.

[0023] Solution 3: A data processing method for an integrated hydrogen sensor microsystem, which is applied to the integrated hydrogen sensor microsystem manufactured by the manufacturing method of the integrated hydrogen sensor microsystem described in Solution 2.

[0024] The hydrogen concentration was measured using two methods: catalytic combustion and semiconductor principle. The hydrogen sensing microsystem was calibrated under different concentrations and temperatures. The detection data of the sensing microsystem based on the homogeneous principle was processed by summing and averaging. The detection data of the sensing microsystem based on the heterogeneous principle was calculated using the following concentration calculation formula:

[0025] C f =C cat w cat +C semi w semi

[0026] Where C cat is the hydrogen concentration measured by catalytic combustion, Csemi is the hydrogen concentration measured by the semiconductor sensor, w cat and w semi is the corresponding weight. When low concentration hydrogen is detected in the range of [0ppm, 1000ppm), w semi The value accounts for 70%, w cat Take the value as 30%; when the high concentration hydrogen detection is in the range of [1000ppm~40000ppm], w semi The value accounts for 30%, w cat The value is 70% to achieve accurate detection of hydrogen.

[0027] The present invention has the following beneficial effects:

[0028] 1. The integrated hydrogen sensing microsystem designed by the manufacturing method of the present invention is used for safety detection of the four major links of production, storage, transportation and use in the field of hydrogen energy. The integrated sensor microsystem integrates the semiconductor detection principle and the catalytic combustion detection principle to achieve a wide range of hydrogen concentration detection.

[0029] 2. The integrated hydrogen sensing microsystem designed by the manufacturing method of the present invention adopts the combination of electrochemical micro-additive manufacturing technology and micro-machining subtractive manufacturing technology to produce a chip functional structure, which not only makes the sensing microsystem compact and small in size, but also makes batch manufacturing of the microsystem possible.

[0030] 3. The integrated hydrogen sensing microsystem of the present invention adopts a triangular structure and reuses catalytic sensitive unit electrodes, which effectively reduces the space area and reduces the manufacturing cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 Schematic diagram of an alumina ceramic substrate for an integrated hydrogen sensing microsystem;

[0032] Figure 2 Schematic diagram of a functional platinum electrode;

[0033] Figure 3 Schematic diagram of the combination of platinum electrode and alumina ceramic substrate;

[0034] Figure 4 Schematic diagram of the combination of sensitive material, substrate and platinum electrode;

[0035] Figure 5 Schematic diagram of the combination of sensitive material, substrate, platinum electrode and blackbody packaging layer.

[0036] In the figure: 1-alumina ceramic substrate, 2-first wire hole, 3-second wire hole, 4-third wire hole, 5-first platinum pad, 6-second platinum pad, 7-third platinum pad, 8-first semiconductor principle electrode, 9-second semiconductor principle electrode, 10-catalytic principle heating sensitive electrode, 11-semiconductor principle sensitive material, 12-catalytic principle sensitive material, 13-sensitive semiconductor black body silicon carbide anti-infrared radiation packaging layer, 14-sensitive catalytic body black body silicon carbide anti-infrared radiation packaging layer. DETAILED DESCRIPTION

[0037] To make the objectives, technical solutions, and advantages of the present invention more clearly apparent, the present invention is described below using specific embodiments shown in the accompanying drawings. However, it should be understood that these descriptions are merely illustrative and are not intended to limit the scope of the present invention. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present invention.

[0038] The connections mentioned in the present invention are divided into fixed connections and detachable connections. The fixed connections (i.e., non-detachable connections) include but are not limited to conventional fixed connection methods such as hemming, rivet connection, bonding connection, and welding connection. The detachable connections include but are not limited to conventional detachable methods such as threaded connection, snap connection, pin connection, and hinge connection. When the specific connection method is not clearly specified, it is assumed that at least one connection method can always be found among the existing connection methods to achieve the function. Those skilled in the art can choose according to their needs. For example: a welded connection is selected for a fixed connection, and a hinge connection is selected for a detachable connection.

[0039] In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connect," "fixed," etc. should be understood broadly. For example, they may refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in the present invention based on specific circumstances.

[0040] Example 1, combined Figure 1-Figure 5 This embodiment describes a method for manufacturing an integrated hydrogen sensing microsystem, including the following steps:

[0041] Step 1: Using masked electrochemical micro-additive manufacturing technology, on a three-degree-of-freedom motion platform, powered by a constant voltage-pulse power supply, high-purity aluminum foil is electrochemically oxidized in an acidic electrolyte to produce an alumina ceramic chip with a nanopore array;

[0042] Step 2: Using a replacement reaction involving mercuric chloride, the chip is peeled off from the aluminum foil substrate, and a 1nm to 10nm barrier layer in the sensitive area of ​​the chip is etched away using a subtractive manufacturing process to form a transparent nanopore array alumina ceramic functional body in the sensitive area of ​​the chip;

[0043] Step 3: Prepare a tin nitrate solution with a concentration of 6 mol%, age it for 24 hours, use ammonia as a precipitant to form a semiconductor tin dioxide material, mix it with the two-dimensional MXene quantum dot solution, and vacuum dry it to form a two-dimensional MXene quantum dot-modified tin dioxide hydrogen semiconductor nano-sensitive material;

[0044] Step 4: Prepare palladium chloride and rhodium chloride catalyst solutions, heat and add nitric acid to dissolve the palladium chloride and rhodium chloride reagents to form an acidic catalyst solution, with a palladium: rhodium molar ratio of 3:1 and a comprehensive concentration of 2%-4%. The prepared acidic catalyst solution must be treated at 70°C-90°C for 1h-2h to fully dissolve it. The acidic catalyst solution needs to be aged for more than 24 hours to form a catalyst solution;

[0045] Step 5: Immerse the transparent nanopore array alumina ceramic functional carrier chip in a solution of aluminum nitrate and two-dimensional MXene quantum dots, vacuum dry, and then place it in a solution of precious metal salts of iridium, rhodium, and palladium catalysts. Vacuum filter, remove the chip, and perform a high-temperature heat treatment under nitrogen protection at 700°C to remove chloride ions, forming a catalytic hydrogen-sensitive chip with 5-10nm quantum dot features.

[0046] Step 6: Make a hollow electrode mask and use the sputtering process to form a 1um-2um platinum sensitive heating electrode on the chip. Heat treatment at a high temperature of 900℃~1100℃ to form a stable platinum sensitive heating electrode.

[0047] Step 7: Using a dispensing process, the two-dimensional MXene quantum dot-modified tin dioxide sensitive material is coated on the chip, and then subjected to high-temperature heat treatment under nitrogen protection at a temperature of 600°C;

[0048] Step 8: Using a spraying process, a black body silicon carbide infrared radiation protection packaging layer with a thickness of 10um-20um and a particle size of 30nm-90nm is formed on the platinum electrode of the chip, and the silicon carbide layer is fixed by high-temperature heat treatment;

[0049] Step 9: Using the slurry sintering process, the leads are soldered to the chip through the platinum slurry;

[0050] Step 10: Assemble the chip using a standard tube socket, weld the leads, and assemble the cap to form an integrated hydrogen sensing microsystem.

[0051] The integrated hydrogen sensing microsystem manufactured by the manufacturing method of the integrated hydrogen sensing microsystem of this embodiment includes an alumina ceramic substrate 1, which has a triangular structure. A first wire-passing hole 2, a second wire-passing hole 3 and a third wire-passing hole 4 are processed on the alumina ceramic substrate 1. A first semiconductor principle electrode 8, a second semiconductor principle electrode 9 and a catalytic principle heating sensitive electrode 10 are covered on the alumina ceramic substrate 1. The first semiconductor principle electrode 8 is connected to a first platinum pad 5, which is arranged in the first wire-passing hole 2. The catalytic principle heating sensitive electrode 10 is connected to a second platinum pad 6 and a third platinum pad 7, which is arranged in the second wire-passing hole 3 and the third platinum pad 7 is arranged in the third wire-passing hole 4. A sensitive semiconductor blackbody silicon carbide infrared radiation protection packaging layer 13 is formed on the first semiconductor principle electrode 8 and the second semiconductor principle electrode 9 by a semiconductor principle sensitive material 11, and a sensitive catalytic body blackbody silicon carbide infrared radiation protection packaging layer 14 is formed on the catalytic principle heating sensitive electrode 10 by a catalytic principle sensitive material 12.

[0052] Example 2, combined with Figure 1-Figure 5 To illustrate this embodiment, an integrated hydrogen sensing microsystem working mode of this embodiment is to realize hydrogen detection based on the semiconductor principle at 250°C and 300°C by controlling the heating voltage of the hydrogen sensing microsystem; and to realize hydrogen detection based on the catalytic combustion principle at 350°C and 400°C by controlling the heating voltage of the sensor.

[0053] For the integrated hydrogen sensing microsystem, two temperatures of 250°C and 300°C are used to detect hydrogen concentration based on the semiconductor principle, and two temperatures of 350°C and 400°C are used to detect hydrogen concentration based on the catalytic combustion principle. Compared with traditional methods, more abundant information is obtained, and weights are assigned to samples of different concentrations for calculation, which effectively improves the accuracy of hydrogen detection and the detection capability of the hydrogen sensing microsystem. It provides a useful tool for hydrogen leakage safety detection in the hydrogen energy field and brings great reliability to practical engineering applications.

[0054] Catalytic combustion of hydrogen is a process in which hydrogen is converted to water using a catalyst. Hydrogen is first adsorbed on the catalyst surface, forming a reactive hydrogen intermediate. The hydrogen then decomposes on the catalyst surface, releasing hydrogen atoms. These hydrogen atoms then recombine with oxygen atoms from the air on the catalyst surface to form water vapor. The overall chemical formula is: 2H2 + O2 = 2H2O.

[0055] The catalytic working principle is based on the chemical reaction between hydrogen and oxygen in the air on the catalyst surface, which causes the temperature of the sensing microsystem to change. When the hydrogen concentration is high, the reaction is violent and the temperature is high. The detection of hydrogen is achieved by detecting the temperature with a platinum electrode.

[0056] The principle of hydrogen semiconductor detection is based on the chemical reaction between hydrogen and the surface of semiconductor sensitive materials, which causes the conductivity of the sensor to change, thereby realizing the detection of hydrogen concentration. In the metal oxide semiconductor sensor, hydrogen molecules react with oxygen molecules adsorbed on the surface of the material to produce water. The reaction process is: 2H2+O2 - =2H2O+2e - The reaction releases electrons. The chemical reaction between hydrogen and the surface of the sensitive material causes the generation or consumption of electrons in the semiconductor material, thereby changing the material's conductivity. This change in conductivity is a monotonic function of the hydrogen concentration. By measuring the change in conductivity, the hydrogen concentration can be calculated.

[0057] Example 3, combined with Figure 1-Figure 5 This embodiment describes a data processing method for an integrated hydrogen sensing microsystem. The method uses catalytic combustion and semiconductor principles to measure hydrogen concentration, calibrates the hydrogen sensing microsystem under different concentrations and temperatures, and processes the detection data of the sensing microsystem based on the homogeneous principle by summing and averaging. For the detection data of the sensing microsystem based on the heterogeneous principle, the following concentration calculation formula is used:

[0058] C f =C cat w cat +C semi w semi

[0059] Where C cat is the hydrogen concentration measured by catalytic combustion, C semi is the hydrogen concentration measured by the semiconductor sensor, w cat and w semi is the corresponding weight. When low concentration hydrogen is detected in the range of [0ppm, 1000ppm), w semi The value accounts for 70%, w cat Take the value as 30%; when the high concentration hydrogen detection is in the range of [1000ppm~40000ppm], w semi The value accounts for 30%, w cat The value is 70% to achieve accurate detection of hydrogen.

[0060] This embodiment is only an illustrative description of the present invention and does not limit its protection scope. Those skilled in the art may also make partial changes thereto. As long as they do not exceed the spirit of the present invention, they are all within the protection scope of the present invention.

Claims

1. A method for manufacturing an integrated hydrogen sensing microsystem, characterized in that: The following steps are involved: Step 1: Using masked electrochemical micro-additive manufacturing technology, on a three-degree-of-freedom motion platform, powered by a constant voltage-pulse power supply, high-purity aluminum foil is electrochemically oxidized in an acidic electrolyte to produce an alumina ceramic chip with a nanopore array; Step 2: Using a replacement reaction involving mercuric chloride, the chip is peeled off from the aluminum foil substrate, and a 1nm to 10nm barrier layer in the sensitive area of ​​the chip is etched away using a subtractive manufacturing process to form a transparent nanopore array alumina ceramic functional body in the sensitive area of ​​the chip; Step 3: Prepare a tin nitrate solution with a concentration of 3 mol% to 7 mol%, age it for 24 hours, use ammonia as a precipitant to form a semiconductor tin dioxide material, mix it with the two-dimensional MXene quantum dot solution, and vacuum dry it to form a two-dimensional MXene quantum dot-modified tin dioxide hydrogen semiconductor nano-sensitive material; Step 4: preparing a palladium chloride and rhodium chloride catalyst solution, heating and adding nitric acid to dissolve the palladium chloride and rhodium chloride reagents to form an acidic catalyst solution, and aging to form a catalyst solution; Step 5: Immerse the transparent nanopore array alumina ceramic functional carrier chip in a solution of aluminum nitrate and two-dimensional MXene quantum dots, vacuum dry, and then place it in a solution of precious metal salts of iridium, rhodium, and palladium catalysts. Vacuum filter, remove the chip, and perform high-temperature heat treatment under nitrogen protection to remove chloride ions, forming a catalytic hydrogen-sensitive chip with quantum dot characteristics. Step 6: Make a hollow electrode mask, use sputtering process to form a platinum-sensitive heating electrode on the chip, and form a stable platinum-sensitive heating electrode after heat treatment; Step 7: Using a dispensing process, the two-dimensional MXene quantum dot-modified tin dioxide sensitive material is coated on the chip and subjected to high-temperature heat treatment under nitrogen protection; Step 8: Using a spraying process to form a particle-sized black body silicon carbide infrared radiation protection packaging layer on the platinum electrode of the chip, and then fixing the silicon carbide layer through high-temperature heat treatment; Step 9: Using the slurry sintering process, the leads are soldered to the chip through the platinum slurry; Step 10: Assemble the chip using a standard tube socket, weld the leads, and assemble the cap to form an integrated hydrogen sensing microsystem.

2. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 1, wherein: In the step 4, the palladium: rhodium molar ratio of the acidic catalyst solution is 3:1, and the overall concentration is 2% to 4%. The prepared acidic catalyst solution is treated at a temperature of 70° C. to 90° C. for 1 hour to 2 hours to fully dissolve the acidic catalyst solution. The acidic catalyst solution is then aged for more than 24 hours to form a catalyst solution.

3. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 2, wherein: In the step 5, the chip is taken out and subjected to high-temperature treatment at a temperature of 700° C. under nitrogen protection, and the resulting catalytic hydrogen-sensitive chip has quantum dot features of 5 nm to 10 nm.

4. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 3, wherein: In the step six, a platinum sensitive heating electrode with a thickness of 1 μm to 2 μm is formed on the chip, and the heat treatment temperature is 900° C. to 1100° C.

5. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 4, characterized in that: In the step seven, the high temperature heat treatment temperature is 600°C.

6. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 5, characterized in that: In the step eight, the size of the formed black body silicon carbide infrared radiation protection packaging layer is 10 μm to 20 μm, and the thickness is 30 nm to 90 nm.

7. An integrated hydrogen sensor microsystem, manufactured by the method for manufacturing an integrated hydrogen sensor microsystem according to claim 6, characterized in that: The invention comprises an alumina ceramic substrate (1), the alumina ceramic substrate (1) is a triangular structure, a first wire hole (2), a second wire hole (3) and a third wire hole (4) are processed on the alumina ceramic substrate (1), a first semiconductor principle electrode (8), a second semiconductor principle electrode (9) and a catalytic principle heating sensitive electrode (10) are covered on the alumina ceramic substrate (1), a first platinum pad (5) is connected to the first semiconductor principle electrode (8), the first platinum pad (5) is arranged in the first wire hole (2), and the catalytic principle heating sensitive electrode (10) is connected to the first semiconductor principle electrode (8). ) is connected to a second platinum pad (6) and a third platinum pad (7), the second platinum pad (6) is arranged in the second wire hole (3), the third platinum pad (7) is arranged in the third wire hole (4), a sensitive semiconductor black body silicon carbide anti-infrared radiation packaging layer (13) is formed on the first semiconductor principle electrode (8) and the second semiconductor principle electrode (9) through the semiconductor principle sensitive material (11), and a sensitive catalytic body black body silicon carbide anti-infrared radiation packaging layer (14) is formed on the catalytic principle heating sensitive electrode (10) through the catalytic principle sensitive material (12).

8. A data processing method for an integrated hydrogen sensor microsystem, the method being applied to the integrated hydrogen sensor microsystem according to claim 7, characterized in that: The hydrogen concentration was measured using two methods: catalytic combustion and semiconductor principle. The hydrogen sensing microsystem was calibrated under different concentrations and temperatures. The detection data of the sensing microsystem based on the homogeneous principle was processed by summing and averaging. The detection data of the sensing microsystem based on the heterogeneous principle was calculated using the following concentration calculation formula: C f =C cat w cat +C semi w semi Where C cat is the hydrogen concentration measured by catalytic combustion, C semi is the hydrogen concentration measured by the semiconductor sensor, w cat and w semi is the corresponding weight. When low concentration hydrogen is detected in the range of [0ppm, 1000ppm), w semi The value accounts for 70%, w cat Take the value as 30%; when the high concentration hydrogen detection is in the range of [1000ppm~40000ppm], w semi The value accounts for 30%, w cat The value is 70% to achieve accurate detection of hydrogen.

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