Reaction cavity structure and atomic layer deposition equipment

Abstract

The invention discloses a reaction chamber structure and atomic layer deposition equipment, the reaction chamber structure comprises a chamber, a first bushing and a second bushing, the first bushing is arranged in the chamber, the second bushing is arranged in the first bushing, and a gap is formed between the first bushing and the second bushing; wherein the first lining is provided with a first ventilation unit, and the second lining is provided with a second ventilation unit; gas can enter the cavity through the first ventilation unit, the gap and the second ventilation unit in sequence. In the purging process, purging gas passes through the double-layer ventilation unit, namely the first ventilation unit and the second ventilation unit, the purging uniformity is improved, the purging effect is enhanced, the double-layer ventilation unit can effectively enhance the gas flowing and mixing effect, gas is more uniformly distributed in the space by introducing the gas on different layers, and the purging efficiency is improved. Therefore, the overall gas uniformity is improved. The technical problem that the deposition quality of a thin film is influenced by over-high granularity in the cavity due to incomplete purging of a traditional reaction cavity is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a reaction chamber structure and atomic layer deposition equipment. Background Art

[0002] Purging the reaction chamber is an important step in the atomic layer deposition (ALD) process, which is used to remove unreacted precursors and byproducts to ensure that the wafer surface is clean and ready for the next reaction. In specific operations, inert gases such as nitrogen or argon are usually used for purging.

[0003] In order to achieve purging, the traditional solution is generally to directly introduce gas into the reaction chamber, or to use a single-layer liner structure to introduce gas. Both methods result in uneven gas flow and poor purging effect. It is difficult to purge the unreacted precursors and by-products, resulting in excessive particle size in the chamber, which affects the quality of thin film deposition. Summary of the invention

[0004] The embodiments of the present invention provide a reaction chamber structure and an atomic layer deposition device, which solve the technical problem that in a conventional reaction chamber, excessive particles in the chamber are caused by incomplete purging, thus affecting the quality of thin film deposition.

[0005] In order to solve the above problems, according to one aspect of the present application, an embodiment of the present invention provides a reaction chamber structure, which includes a chamber, a first sleeve and a second sleeve, wherein the first sleeve is arranged in the chamber, and the second sleeve is arranged in the first sleeve with a gap therebetween; wherein the first sleeve has a first ventilation unit, and the second sleeve has a second ventilation unit; gas can enter the chamber through the first ventilation unit, the gap and the second ventilation unit in sequence.

[0006] In some embodiments, the first ventilation unit includes a groove and a first ventilation hole, the groove is arranged on the outer wall of the first bushing, and the first ventilation hole is opened at the bottom of the groove.

[0007] In some embodiments, the groove extends from one end to the other end of the first bushing.

[0008] In some embodiments, a plurality of the first ventilation holes are provided, and the plurality of the first ventilation holes are evenly distributed at the bottom of the groove.

[0009] In some embodiments, the second ventilation unit includes a second ventilation hole, and the second ventilation hole is opened on the side wall of the second bushing.

[0010] In some embodiments, one end of the second bushing is an arc-shaped structure, and the arc-shaped structure runs through the length direction of the second bushing.

[0011] In some embodiments, a plurality of the second ventilation holes are provided, and the plurality of the second ventilation holes are evenly distributed along the arc-shaped structure on the side wall of the second bushing.

[0012] In some embodiments, the second ventilation unit further includes a step, which is disposed on a side wall of the second bushing and extends through a width direction of the second bushing.

[0013] In some embodiments, two steps are provided, and the two steps enable a middle area of ​​the second bushing to be higher than an edge area of ​​the second bushing.

[0014] According to another aspect of the present application, an embodiment of the present invention provides an atomic layer deposition device, which includes the above-mentioned reaction chamber structure.

[0015] Compared with the prior art, the reaction chamber structure of the present invention has at least the following beneficial effects:

[0016] The reaction chamber structure provided by the present invention includes a chamber, a first liner and a second liner, wherein the first liner is arranged in the chamber, and the second liner is arranged in the first liner with a gap therebetween; wherein the first liner has a first ventilation unit, and the second liner has a second ventilation unit; gas can enter the chamber through the first ventilation unit, the gap and the second ventilation unit in sequence.

[0017] The purge gas enters the gap between the first bushing and the second bushing through the first ventilation unit, accumulates in the gap, and then enters the chamber through the second ventilation unit to purge the unreacted precursors and by-products in the chamber. In this process, the purge gas passes through the double-layer ventilation unit (the first ventilation unit and the second ventilation unit), which improves the uniformity of the purge and enhances the purge effect. Specifically: first, the double-layer ventilation unit can increase the average velocity and flow intensity of the gas through the interaction of gas flows at different levels; secondly, the double-layer ventilation unit can reduce the stagnant area in the gas flow, thereby shortening the mixing time; and the double-layer ventilation unit can more effectively control the distribution of the gas to avoid the problem of excessive or low local concentration; that is, the double-layer ventilation unit can effectively enhance the gas flow and mixing effect, and by introducing gas at different levels, the gas is more evenly distributed in the space, thereby improving the overall gas uniformity. It solves the technical problem that the traditional reaction chamber has too high a particle size in the chamber due to incomplete purge, which affects the quality of thin film deposition.

[0018] The atomic layer deposition equipment provided by the present invention is designed based on the above-mentioned reaction chamber structure. Its beneficial effects refer to the beneficial effects of the above-mentioned reaction chamber structure, which will not be described in detail here.

[0019] In addition, in the cleaning machine provided by the present invention, the detection component detects the thickness of the surface element of the heating plate in real time, that is, while the polishing component is working according to the polishing time, the detection component is still working, and when it detects that the thickness of the surface element of the heating plate meets the requirement, the polishing component stops working. The detection component, the polishing component and the control component in the present invention form a closed-loop feedback system, which can prevent the surface of the heating plate from being uncleanly cleaned or the surface material from being polished too much.

[0020] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0022] Figure 1 is a structural schematic diagram of a first bushing in a reaction chamber structure provided by an embodiment of the present invention;

[0023] Figure 2 is a top view of a first bushing in a reaction chamber structure provided by an embodiment of the present invention;

[0024] Figure 3 is a structural schematic diagram of a second bushing in a reaction chamber structure provided by an embodiment of the present invention;

[0025] Figure 4 is a top view of a second bushing in a reaction chamber structure provided by an embodiment of the present invention;

[0026] Figure 5 is a structural schematic diagram of a reaction chamber structure provided by an embodiment of the present invention;

[0027] Figure 6 This is the velocity contour of the purge gas after only the first liner is used;

[0028] Figure 7 It is the velocity cloud diagram of the purge gas after the second liner and the second liner are used;

[0029] Reference numerals:

[0030] 1. first bushing; 11. first ventilation unit; 111. groove; 112. first ventilation hole; 2. second bushing; 21. second ventilation unit; 211. second ventilation hole; 212. step. DETAILED DESCRIPTION

[0031] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation methods, structures, features and effects of the present invention application are described in detail below in conjunction with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures, or characteristics in one or more embodiments may be combined in any suitable form.

[0032] In the description of the present invention, it should be clarified that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, but are not necessarily used to describe a specific order or sequence; the terms "vertical", "lateral", "longitudinal", "front", "rear", "left", "right", "up", "down", "horizontal", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, and do not mean that the referred device or element must have a specific direction or position, and therefore cannot be understood as a limitation on the present invention.

[0033] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0034] In the atomic layer deposition (ALD) process, the purging step of the reaction chamber is one of the key links. The main purpose of purging is to remove excess reactants and by-products in the reaction chamber to ensure that the next round of precursors can effectively chemically adsorb and react on the substrate surface. The purge gas usually uses an inert gas, such as nitrogen or argon, and its flow rate and time can be adjusted according to specific process requirements. The purge step plays a vital role in the atomic layer deposition process. It not only affects the quality and uniformity of the film, but is also directly related to the efficiency and reliability of the entire process. In order to achieve purging, traditional solutions generally directly introduce gas into the reaction chamber, or use a single-layer liner structure to introduce gas. Both methods result in uneven gas and poor purging effect. It is difficult to purge the unreacted precursors and by-products, resulting in excessive particles in the chamber, affecting the quality of film deposition.

[0035] In view of the above problems, the present invention mainly starts from improving the uniformity of the gas entering the cavity, and improves the purging effect by improving the uniformity of the gas. In order to improve the uniformity of the gas, the present invention designs a double-layer bushing.

[0036] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0037] Example 1

[0038] This embodiment provides a reaction chamber structure, such as Figure 1-7 As shown, the reaction chamber structure includes a chamber, a first liner 1 and a second liner 2, wherein the first liner 1 is arranged in the chamber, and the second liner 2 is arranged in the first liner 1 with a gap therebetween; wherein the first liner 1 has a first ventilation unit 11, and the second liner 2 has a second ventilation unit 21; gas can enter the chamber through the first ventilation unit 11, the gap and the second ventilation unit 21 in sequence.

[0039] Specifically, the chamber, the first liner 1 and the second liner 2 are nested, the innermost layer is the second liner 2, the middle layer is the first liner 1, and the outermost layer is the chamber. The purge gas enters the gap between the first liner 1 and the second liner 2 through the first ventilation unit 11, and after accumulating in the gap, enters the chamber through the second ventilation unit 21 to purge the unreacted precursors and byproducts in the chamber.

[0040] During this process, the purge gas passes through the double-layer ventilation unit (the first ventilation unit 11 and the second ventilation unit 21), which improves the uniformity of the purge and enhances the purge effect. Specifically: first, the double-layer ventilation unit can increase the average velocity and flow intensity of the gas through the interaction of gas flows at different levels; secondly, the double-layer ventilation unit can reduce the stagnant area in the gas flow, thereby shortening the mixing time; and the double-layer ventilation unit can more effectively control the distribution of the gas to avoid the problem of local concentration being too high or too low; that is, the double-layer ventilation unit can effectively enhance the gas flow and mixing effects, and by introducing gas at different levels, the gas is more evenly distributed in the space, thereby improving the overall gas uniformity.

[0041] In addition, the first bushing 1 and the second bushing 2 are nested, and the double-layer bushing can achieve heat preservation of the chamber, thereby improving the temperature uniformity of the wafer, reducing wafer deformation, improving the uniformity of thin film deposition, and ultimately improving process performance and stability.

[0042] In a specific embodiment, Figure 1 and Figure 2As shown, the first ventilation unit 11 includes a groove 111 and a first ventilation hole 112 . The groove 111 is arranged on the outer wall of the first bushing 1 , and the first ventilation hole 112 is opened at the bottom of the groove 111 .

[0043] Under the guidance of the groove 111, the purge gas can better enter the gap between the first bushing 1 and the second bushing 2 through the first vent hole 112; more specifically, when the purge gas flows through the groove 111, the flow expansion causes the boundary layer to separate, and the suction effect sucks part of the purge gas into the groove 111, achieving circumferential fusion, thereby improving the internal flow state and making the internal pressure more stable.

[0044] In a specific embodiment, the groove 111 extends from one end of the first bushing 1 to the other end.

[0045] For a clearer explanation, it is assumed that the first bushing 1 includes four first-connected surfaces, namely the first surface, the second surface, the third surface and the fourth surface, wherein the first surface and the third surface are two opposite surfaces, and the second surface and the fourth surface are two opposite surfaces; it is assumed that a groove 111 is provided on the first surface, and the groove 111 extends to both sides of the first surface and can extend to the second surface or the fourth surface. At this time, first vent holes 112 are provided on the first surface and the second surface, or the first surface and the fourth surface, while the third surface does not have the first vent hole 112 to avoid the collision of the purge gas after being discharged from the first vent holes 112 on the first surface and the third surface at the same time. Of course, the second surface and the fourth surface do not have the first vent holes 112 at the same time.

[0046] In a specific embodiment, a plurality of the first vent holes 112 are provided, and the plurality of the first vent holes 112 are evenly distributed at the bottom of the groove 111. That is, the plurality of first vent holes 112 are arranged at equal intervals in the extending direction of the groove 111, and the intervals between adjacent first vent holes 112 are equal, so that the gas flow rate of the purge gas entering the gap at each position in the extending direction of the groove 111 is substantially equal, and the purge gas can evenly flow into the gap, thereby improving the purge uniformity.

[0047] In addition, the shape of the first vent hole 112 can be a cylindrical through hole, a tapered through hole, etc. These different hole shapes may affect the flow and distribution of the purge gas, thereby affecting the purge effect. For example, in one embodiment, the shape of the first vent hole 112 is a tapered through hole, which will more effectively guide the flow of the purge gas and improve the purge efficiency.

[0048] In a specific embodiment, Figure 3 and Figure 4 As shown, the second ventilation unit 21 includes a second ventilation hole 211 , and the second ventilation hole 211 is opened on the side wall of the second bushing 2 .

[0049] For a clearer explanation, it is assumed that the second bushing 2 has four faces, namely the fifth face, the sixth face, the seventh face and the eighth face, wherein the fifth face and the seventh face are two opposite faces, and the sixth face and the eighth face are two opposite faces. When the first bushing 1 and the second bushing 2 are matched, the bottom surface of the first bushing 1 is connected to the fifth face of the second bushing 2 through a gap. Then, when the groove 111 is opened on the first face, the second vent 211 is set on the fifth face. In this way, the purge gas enters the gap between the first bushing 1 and the second bushing 2 through the first vent 112, and then enters the chamber through the second vent 211 to purge the unreacted precursors and by-products in the chamber.

[0050] In a specific embodiment, one end of the second bushing 2 is an arc-shaped structure, and the arc-shaped structure runs through the length direction of the second bushing 2. That is to say, the ends of the sixth surface and the eighth surface are arc-shaped structures.

[0051] In a specific embodiment, a plurality of the second ventilation holes 211 are provided, and the plurality of the second ventilation holes 211 are evenly distributed along the arc-shaped structure on the side wall of the second bushing 2 .

[0052] Distributing the second vent holes 211 on the arc structure can increase the area occupied by the second vent holes 211 and the number of the second vent holes 211, thereby making the purge gas entering the chamber through the second vent holes 211 more uniform and avoiding the accumulation of the purge gas in one place.

[0053] Similar to the first vent hole 112, the shape of the second vent hole 211 can be a cylindrical through hole, a tapered through hole, etc. These different hole shapes may affect the flow and distribution of the purge gas, thereby affecting the purge effect. For example, in one embodiment, the shape of the first vent hole 112 is a tapered through hole, which will more effectively guide the flow of the purge gas and improve the purge efficiency. At the same time, the spacing between adjacent second vent holes 211 can also be adjusted according to actual needs.

[0054] In a specific embodiment, the second ventilation unit 21 further includes a step 212, which is provided on the side wall of the second bushing 2 and runs through the width direction of the second bushing 2. Two steps 212 are provided, and the two steps 212 make the middle area of ​​the second bushing 2 higher than the edge area of ​​the second bushing 2.

[0055] When the purge gas enters the gap between the first bushing 1 and the second bushing 2 through the first vent 112, most of the gas accumulates in a relatively middle position, so the purge gas in the middle is relatively sufficient, and the purge gas on both sides is relatively less; when the gas in the gap needs to enter the chamber through the second vent 211, the gas flow rate in the middle will be higher than the gas flow rate on both sides, making the gas uneven. In this embodiment, two steps 212 are set, and the two steps 212 make the middle area of ​​the second bushing 2 higher than the edge area of ​​the second bushing 2, which is equivalent to the second vents 211 on both sides becoming shorter, the flow resistance becoming smaller, and the flow rate becoming larger. This setting further ensures the uniformity of the purge gas.

[0056] In order to more intuitively reflect the effect of the reaction chamber structure provided in this embodiment, the velocity cloud diagram of the purge gas after adopting the reaction chamber structure (the first liner 1 and the second liner 2) provided in this embodiment is simulated, as shown in FIG. Figure 7 At the same time, a comparative example was made, in which a single-layer bushing was used and only the first bushing 1 was used, as shown Figure 6 As shown. Figure 6 and Figure 7 It can be clearly seen that the speed of the purge gas in the comparative example is obviously uneven, mainly reflected in that the speeds of the two sides and the middle are completely different, while the speed of the purge gas in this embodiment is basically uniform.

[0057] The reaction chamber structure provided in this embodiment changes the flow resistance of the purge gas so that it flows more evenly into the reaction chamber, thereby enhancing the purge effect and improving the particle size problem in the chamber. The double-layer liner also has a better heat preservation effect, making the temperature distribution of the chamber where the wafer is located more uniform.

[0058] Example 2

[0059] This embodiment provides an atomic layer deposition device, which includes the reaction chamber structure described in Embodiment 1.

[0060] The atomic layer deposition equipment provided in this embodiment adopts the reaction chamber structure in Example 1. During the purge process, it can effectively remove excess reactants and by-products in the reaction chamber to prevent them from affecting the quality and performance of the film.

[0061] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A reaction chamber structure, characterized in that: The reaction chamber structure includes a chamber, a first sleeve and a second sleeve, wherein the first sleeve is arranged in the chamber, and the second sleeve is arranged in the first sleeve with a gap therebetween; wherein the first sleeve has a first ventilation unit, and the second sleeve has a second ventilation unit; gas can enter the chamber through the first ventilation unit, the gap and the second ventilation unit in sequence.

2. The reaction chamber structure according to claim 1, characterized in that: The first ventilation unit includes a groove and a first ventilation hole. The groove is arranged on the outer wall of the first bushing, and the first ventilation hole is opened at the bottom of the groove.

3. The reaction chamber structure according to claim 2, characterized in that: The groove extends from one end to the other end of the first bushing.

4. The reaction chamber structure according to claim 3, characterized in that: A plurality of the first ventilation holes are arranged, and the plurality of the first ventilation holes are evenly distributed at the bottom of the groove.

5. The reaction chamber structure according to claim 1, characterized in that: The second ventilation unit includes a second ventilation hole, and the second ventilation hole is opened on the side wall of the second bushing.

6. The reaction chamber structure according to claim 5, characterized in that: One end of the second bushing is an arc-shaped structure, and the arc-shaped structure runs through the length direction of the second bushing.

7. The reaction chamber structure according to claim 6, characterized in that: A plurality of the second ventilation holes are provided, and the plurality of the second ventilation holes are evenly distributed along the arc-shaped structure on the side wall of the second bushing.

8. The reaction chamber structure according to claim 6, characterized in that: The second ventilation unit further includes a step, which is disposed on a side wall of the second bushing and extends through a width direction of the second bushing.

9. The reaction chamber structure according to claim 8, characterized in that: Two steps are provided, and the two steps enable the middle area of ​​the second bushing to be higher than the edge area of ​​the second bushing.

10. An atomic layer deposition device, characterized in that: The atomic layer deposition equipment comprises the reaction chamber structure according to any one of claims 1-9.

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