One-dimensional linear ion beam scanning device and control method thereof

Abstract

The invention relates to the field of integrated circuit manufacturing, in particular to a one-dimensional linear ion beam scanning device and a control method thereof.The one-dimensional linear ion beam scanning device comprises an ion beam source, a controller and two opposite polar plates; the ion beam source is arranged between the two polar plates and is used for emitting an original ion beam; the original ion beam passes through the space between the two polar plates; each polar plate comprises an electromagnet, and the electromagnets in the two polar plates form an inter-plate magnetic field between the two polar plates; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam; and the controller is electrically connected with the polar plates and is used for adjusting the magnetic field intensity of the inter-plate magnetic field, so that the original ion beam is deflected to different degrees under different magnetic field intensities, and a one-dimensional linear ion beam is obtained. According to the invention, the original ion beam is controlled by the magnetic field, although the motion trail of the original ion beam is changed, the kinetic energy of each ion in the ion beam is not changed, and the process uniformity of ion implantation is improved.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit manufacturing, and in particular to a one-dimensional linear ion beam scanning device and a control method thereof. Background Art

[0002] In the large-scale integrated circuit manufacturing industry, ion implantation technology is a crucial process technology, which is widely used in the ion doping process to change the local electrical properties of the wafer. In addition, it also changes the surface characteristics of the wafer to assist other process processes. The principle of the ion implanter is that the gas molecules are hit by electrons in the ion source and lose electrons to become cations, which are drawn out of the electrode and further attracted out of the ion source. After continuous screening by components such as the analysis magnetic field, the impurity cations are filtered out to obtain the cation beam of the target source species. After a series of acceleration and deceleration, the cation beam of the target source species reaches the required energy. At the same time, the shape and uniformity of the ion beam flow need to be continuously adjusted. Finally, the wafer can be operated after it meets the implantation requirements.

[0003] The beam drawn out from the ion source needs to pass through the extraction electrode. Depending on the shape of the extraction electrode, the beam shape of the implanter is also different. The more commonly used is the "spot beam" ion beam. For the spot ion beam, since the beam spot is small and cannot cover the wafer diameter, the spot ion beam needs to be scanned before injection to make it a one-dimensional linear beam with a length greater than the wafer diameter. At this time, static electricity carries the wafer for mechanical scanning along the vertical direction of the linear beam. The ion implanter will automatically adjust according to the dose requirements of the process menu (Recipe) and the actual beam size, so that the entire wafer is implanted according to the process menu's requirements for ion energy, dose angle, etc.

[0004] In order to scan the point beam into a one-dimensional line with a length greater than the wafer diameter, ion implanters using a point ion beam are all equipped with an electric field scanning device, called a scanner. Its structure consists of two electrode plates at a certain angle. High-frequency and opposite-phase voltages are applied to the two electrode plates, so that the charged cations entering the electrode plates are deflected by the electric field force. The electric fields of opposite phases formed by the two electrode plates make the cations always attracted by one electrode plate and repelled by the other electrode plate, so that the cations are deflected toward a certain electrode plate; when the voltages of the two electrodes are reversed at the same time, the attraction and repulsion forces on the cations are reversed at the same time, and the movement will be deflected toward the other electrode plate, and so on. By increasing the alternating frequency of the voltages of the two electrode plates, the cations can be deflected and scanned back and forth between the two electrode plates at high speed, and finally a one-dimensional linear beam with a length greater than the wafer diameter is formed. Since the scanning process is achieved through the action of the electric field force, it is usually called "electric scanning".

[0005] The current electric scanning method can realize the scanning of the cation beam with a point-shaped cross-section into a one-dimensional line with a length greater than the wafer diameter through the action of the alternating electric field force, which meets the beam size requirements of ion implantation. However, the electric field scanning method will cause the movement speed of the cations in the beam to change. Specifically, the movement speed of the cations will slow down in the process of approaching the two electrode plates, and the movement speed of the cations will speed up in the process of moving away from the two electrode plates, thereby forming a Gaussian distribution of the kinetic energy of the ions, which reduces the uniformity of the ion implantation energy.

[0006] Therefore, how to improve the uniformity of the ion implantation energy of a one-dimensional linear ion beam obtained by scanning a point ion beam is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0007] The object of the present invention is to provide a one-dimensional linear ion beam scanning device and a control method thereof, so as to solve the problem of poor uniformity of ion implantation energy of a one-dimensional linear ion beam obtained by scanning a point ion beam in the prior art.

[0008] In order to solve the above technical problems, the present invention provides a one-dimensional linear ion beam scanning device, comprising an ion beam source, a controller and two oppositely arranged pole plates;

[0009] The ion beam source is disposed between the two plates and is used to emit an original ion beam; the original ion beam passes through between the two plates;

[0010] The pole plates include electromagnets, and the electromagnets in the two pole plates form an inter-plate magnetic field between the two pole plates; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam;

[0011] The controller is electrically connected to the pole plates and is used to adjust the magnetic field strength of the inter-plate magnetic field so that the original ion beam is deflected to different degrees under different magnetic field strengths to obtain a one-dimensional linear ion beam.

[0012] Optionally, in the one-dimensional linear ion beam scanning device, each of the pole plates includes a plurality of the electromagnets.

[0013] Optionally, in the one-dimensional linear ion beam scanning device, the inter-plate magnetic field includes a plurality of unidirectional magnetic field regions;

[0014] The magnetic field direction and magnetic field strength in a single unidirectional magnetic field region are the same.

[0015] Optionally, in the one-dimensional linear ion beam scanning device, the controller is also used to adjust the magnetic field direction of the inter-plate magnetic field.

[0016] Optionally, in the one-dimensional linear ion beam scanning device, the magnetic field direction of the inter-plate magnetic field is perpendicular to the pole plate.

[0017] Optionally, in the one-dimensional linear ion beam scanning device, the magnetic field direction of the inter-plate magnetic field is parallel to the plane where the pole plates are located.

[0018] Optionally, in the one-dimensional linear ion beam scanning device, a beam current detector is also included;

[0019] The beam detector is electrically connected to the controller and is used to detect the state parameter of the one-dimensional linear ion beam; the state parameter includes at least one of a stability parameter, a fluctuation parameter, a position parameter and a parallelism parameter;

[0020] The controller is also used to adjust the magnetic field strength of the inter-plate magnetic field to outside the working range when the state parameter is abnormal, so that the original ion beam cannot be emitted from the one-dimensional linear ion beam scanning device.

[0021] Optionally, in the one-dimensional linear ion beam scanning device, a distribution adjustment component is also included;

[0022] The distribution adjustment component includes two adjustment plates arranged opposite to each other;

[0023] A single adjustment electrode plate includes a plurality of electromagnets, and the electromagnets in two adjustment electrodes form an adjustment magnetic field between the two adjustment electrodes;

[0024] The controller is electrically connected to the adjustment electrode plate; the controller is also used to adjust the magnetic field strength of the adjustment magnetic field, change the emission direction of the one-dimensional linear ion beam and / or adjust the uniformity of the one-dimensional current ion beam.

[0025] A control method for a one-dimensional linear ion beam scanning device, the control method for a one-dimensional linear ion beam scanning device being used for any one of the above-mentioned one-dimensional linear ion beam scanning devices, comprising:

[0026] receiving original ion beam information and target linear ion beam information;

[0027] Determine magnetic field periodic variation information according to the original ion beam information and the target linear ion beam information;

[0028] The magnetic field periodic change information is sent to the controller, so that the controller adjusts the electromagnets on the two plates according to the magnetic field periodic change information, so that the magnetic field between the plates changes periodically, and the original ion beam is scanned into a one-dimensional linear ion beam.

[0029] Optionally, in the control method of the one-dimensional linear ion beam scanning device, it also includes:

[0030] Acquire the state parameters of the one-dimensional linear ion beam from the beam detector;

[0031] Determining the distribution morphology of the one-dimensional linear ion beam according to the state parameter;

[0032] Determine, according to the distribution morphology, a beam-excessive region and / or a beam-excessive region on the one-dimensional linear ion beam;

[0033] The scanning speed of the area where the beam current passes through is reduced, and / or the scanning speed of the area where the beam current passes through is increased.

[0034] The one-dimensional linear ion beam scanning device provided by the present invention comprises an ion beam source, a controller and two pole plates arranged opposite to each other; the ion beam source is arranged between the two pole plates and is used for emitting an original ion beam; the original ion beam passes between the two pole plates; the pole plates comprise electromagnets, and the electromagnets in the two pole plates form an inter-plate magnetic field between the two pole plates; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam; the controller is electrically connected to the pole plates and is used for adjusting the magnetic field strength of the inter-plate magnetic field so that the original ion beam is deflected to different degrees under different magnetic field strengths to obtain a one-dimensional linear ion beam.

[0035] In an ion implanter, conventional technology uses an electric field to scan the cations in a point-shaped ion beam, which changes the movement speed of the cations. In the process of approaching the two electrode plates, the movement speed of the cations slows down, and in the process of moving away from the two electrode plates, the movement speed of the cations speeds up. The poor consistency of the kinetic energy of the cations leads to poor uniformity of ion implantation. The present invention abandons the electric field and instead uses a magnetic field to control the original ion beam, so that the original ion beam scans in a one-dimensional linear direction at a certain frequency. The Lorentz force exerted by the magnetic field on the ions is always perpendicular to the running direction of the ions. In other words, although the magnetic field changes the motion trajectory of the original ion beam, it does not change the kinetic energy of each ion in the ion beam, and can avoid the unevenness of the kinetic energy of the ions caused by the scanning of the electrode plates in the conventional technology, and can also improve the process uniformity within the ion implantation process surface. The present invention also provides a control method for a one-dimensional linear ion beam scanning device having the above-mentioned beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0037] Figure 1 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0038] Figure 2 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0039] Figure 3 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0040] Figure 4 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0041] Figure 5 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0042] Figure 6 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0043] Figure 7 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0044] Figure 8 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0045] Fig. 9 A schematic structural diagram of a specific implementation of a one-dimensional linear ion beam scanning device provided by the present invention;

[0046] Fig.10 A schematic flow chart of a specific implementation of a control method for a one-dimensional linear ion beam scanning device provided by the present invention.

[0047] In the figure, it includes 10-ion beam source, 20-pole plate, 21-electromagnet, 22a-unidirectional magnetic field area, 30-controller, 40-chamber, 50-beam detector, 60-distribution adjustment component, 60a-adjusting magnetic field, and 61-adjusting pole plate. DETAILED DESCRIPTION

[0048] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0049] The core of the present invention is to provide a one-dimensional linear ion beam scanning device, a structural schematic diagram of a specific implementation is shown in FIG. Figure 1 As shown, it is called the specific embodiment 1, which includes an ion beam source 10, a controller 30 and two oppositely arranged pole plates 20;

[0050] The ion beam source 10 is disposed between the two pole plates 20 and is used to emit an original ion beam; the original ion beam passes through between the two pole plates 20;

[0051] The pole plate 20 includes an electromagnet 21, and the electromagnets 21 in the two pole plates 20 form an inter-plate magnetic field between the two pole plates 20; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam;

[0052] The controller 30 is electrically connected to the pole plate 20 and is used to adjust the magnetic field strength of the inter-plate magnetic field so that the original ion beam is deflected to different degrees under different magnetic field strengths to obtain a one-dimensional linear ion beam.

[0053] The basic unit for controlling the magnetic field of the two plates 20 is a single electromagnet 21. In other words, if each plate 20 includes only one electromagnet 21, the magnetic field between the plates is a uniform unidirectional magnetic field with a uniform field strength at all locations. Figure 1 As shown, Figure 1 The dotted dashed line represents the original ion beam, and the arrow represents the magnetic field direction of the inter-plate magnetic field. Figure 1 The same, no further elaboration will be given.

[0054] If each of the pole plates 20 includes a plurality of the electromagnets 21 , and the plurality of electromagnets 21 are laid flat on the pole plates 20 , the uniformity of the magnetic field between the plates can be greatly increased.

[0055] Further, the inter-plate magnetic field includes a plurality of unidirectional magnetic field regions 22a;

[0056] The magnetic field direction and magnetic field strength in a single unidirectional magnetic field region 22a are the same.

[0057] Please refer to Figure 2Since each of the electromagnets 21 is independently controlled by the controller 30, the magnetic field direction and magnetic field strength formed by each of the electromagnets 21 are independently controllable. Based on this, a number of unidirectional magnetic field regions 22a with independent magnetic field strengths and directions can be divided between the two pole plates 20, thereby realizing more complex and diverse orbital control of the original ion beam, adapting to more types of cavities of one-dimensional linear ion beam scanning devices, and conveniently improving the versatility of the present invention, and further improving the control accuracy of the original ion beam and the uniformity of the output one-dimensional linear ion beam.

[0058] On the other hand, the adjustment process of the electromagnet 21 is continuous, which facilitates the precise control of the magnetic field between the plates, so that the original ion beam is scanned at a certain rate in a certain plane into a one-dimensional line that meets the requirements of ion implantation.

[0059] As a preferred embodiment, the controller 30 is also used to adjust the magnetic field direction of the inter-plate magnetic field. In other words, in this preferred embodiment, the direction of the inter-plate magnetic field is variable, and the top view cross-sectional schematic diagram of two original ion beams (marked with dotted lines in the figure) in different magnetic field directions in the chamber 40 of the one-dimensional linear ion beam scanning device during the scanning process is as shown in FIG. Figure 3 As shown in FIG. 1 , since the magnetic field direction of the inter-plate magnetic field is variable, the bending direction of the original ion beam is also variable, and more one-dimensional linear scanning can be achieved to improve the uniformity of the ion beam. Of course, the magnetic field direction of the inter-plate magnetic field may also remain unchanged. In this case, the top view cross-sectional diagram of the original ion beam (marked with dotted lines in the figure) at each position in the scanning process in the chamber 40 of the one-dimensional linear ion beam scanning device is as shown in FIG. Figure 4 shown.

[0060] As a specific implementation manner, the magnetic field direction of the inter-plate magnetic field is perpendicular to the pole plate 20 .

[0061] The foregoing only mentions that the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam. In this specific embodiment, it is further defined that the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam. At this time, according to the left-hand rule, the force direction of the ions in the original ion beam is parallel to the relative surface of the electrode plate 20, that is, the extension direction of the one-dimensional linear ion beam finally obtained is parallel to the relative surface of the electrode plate 20, which saves more space. Please refer to Figures 1 to 4 .

[0062] As another specific implementation, the magnetic field direction of the inter-plate magnetic field is parallel to the plane where the pole plate 20 is located.

[0063] In addition to the above-mentioned specific embodiments, the magnetic field direction of the inter-plate magnetic field can also be parallel to the plane where the pole plate 20 is located. Figure 5 The magnetic field direction of the inter-plate magnetic field in the figure is perpendicular to the paper surface and outward. At this time, the extension direction of the one-dimensional linear ion beam obtained is perpendicular to the relative surface of the electrode 20, which further broadens the application scenarios of the present invention and improves the versatility of the present invention.

[0064] The one-dimensional linear ion beam scanning device provided by the present invention comprises an ion beam source 10, a controller 30 and two oppositely arranged pole plates 20; the ion beam source 10 is arranged between the two pole plates 20 for emitting an original ion beam; the original ion beam passes between the two pole plates 20; the pole plate 20 comprises an electromagnet 21, and the electromagnets 21 in the two pole plates 20 form an inter-plate magnetic field between the two pole plates 20; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam; the controller 30 is electrically connected to the pole plate 20, and is used to adjust the magnetic field strength of the inter-plate magnetic field, so that the original ion beam deflects to different degrees under different magnetic field strengths to obtain a one-dimensional linear ion beam. In an ion implanter, the conventional technology uses an electric field to scan the cations in a point-shaped ion beam, which changes the movement speed of the cations. In the process of approaching the two electrode plates 20, the movement speed of the cations will slow down, and in the process of moving away from the two electrode plates 20, the movement speed of the cations will speed up, and the kinetic energy consistency of the cations is poor, which will also lead to poor uniformity of ion implantation. The present invention abandons the electric field and instead uses a magnetic field to control the original ion beam, so that the original ion beam scans in a one-dimensional linear direction at a certain frequency. The Lorentz force exerted by the magnetic field on the ions is always perpendicular to the running direction of the ions. In other words, although the magnetic field changes the motion trajectory of the original ion beam, it will not change the kinetic energy of each ion in the ion beam, and can avoid the unevenness of the kinetic energy of the ions caused by the scanning of the electrode plate 20 in the traditional technology, thereby improving the process uniformity within the ion implantation process surface.

[0065] On the basis of the first specific implementation, the one-dimensional linear ion beam scanning device is further improved to obtain a second specific implementation, and its corresponding structural schematic diagram is as follows: Figure 6 As shown, it includes an ion beam source 10, a controller 30 and two oppositely arranged pole plates 20;

[0066] The ion beam source 10 is disposed between the two pole plates 20 and is used to emit an original ion beam; the original ion beam passes through between the two pole plates 20;

[0067] The pole plate 20 includes an electromagnet 21, and the electromagnets 21 in the two pole plates 20 form an inter-plate magnetic field between the two pole plates 20; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam;

[0068] The controller 30 is electrically connected to the plate 20 and is used to adjust the magnetic field strength of the inter-plate magnetic field so that the original ion beam is deflected to different degrees under different magnetic field strengths to obtain a one-dimensional linear ion beam;

[0069] Also included is a beam detector 50;

[0070] The beam detector 50 is electrically connected to the controller 30 and is used to detect the state parameter of the one-dimensional linear ion beam; the state parameter includes at least one of a stability parameter, a fluctuation parameter, a position parameter and a parallelism parameter;

[0071] The controller 30 is also used to adjust the magnetic field strength of the inter-plate magnetic field to outside the working range when the state parameter is abnormal, so that the original ion beam cannot be emitted from the one-dimensional linear ion beam scanning device.

[0072] The difference between this specific embodiment and the above specific embodiment is that the beam detector 50 is additionally provided in this specific embodiment, and the remaining structures are the same as those in the above specific embodiment, which will not be described in detail here.

[0073] In this specific embodiment, a beam detector 50 is added to the one-dimensional linear ion beam scanning device to detect the state parameters of the emitted one-dimensional linear ion beam and send the state parameters to the controller 30. When the controller 30 finds that the output state of the one-dimensional linear ion beam exceeds the preset state, the electromagnet 21 on the pole plate 20 is directly adjusted to significantly increase or decrease the magnetic field strength of the inter-plate magnetic field, so that the original ion beam cannot be emitted from the one-dimensional linear ion beam scanning device. In the case of significantly increasing the magnetic field strength, the rotation radius corresponding to the arc trajectory of the original ion beam is significantly reduced, and the original ion beam will be emitted onto the inner wall (generally graphite) of the chamber 40 of the one-dimensional linear ion beam scanning device. In the case of significantly reducing the magnetic field strength, the rotation radius corresponding to the arc trajectory of the original ion beam is significantly increased, and the original ion beam will also be emitted onto the inner wall of the chamber 40 of the one-dimensional linear ion beam scanning device. For reference, Figure 7 , Figure 7 The dotted line in the figure shows a schematic diagram of the original ion beam being deflected and projected onto the inner wall of the chamber 40 of the one-dimensional linear ion beam scanning device when the magnetic field strength of the magnetic field between the plates is too large or too small. Whether to increase the magnetic field strength of the magnetic field between the plates or to reduce the magnetic field strength of the magnetic field between the plates can be selected according to actual conditions.

[0074] This specific implementation does not require other component structures that block the original ion beam, and can promptly shut down the output of the one-dimensional linear ion beam when the emission state of the one-dimensional linear ion beam is abnormal. While streamlining the device structure and reducing the device cost, it achieves rapid shutdown of the ion beam and ensures the quality of ion implantation. It can achieve timely control of bad beam current during ion implantation. When the beam current is unstable and fluctuates (glitch) too much, the system adjusts the intensity of the magnetic field 60a to change the ion deflection angle, and suspends the injection in time to avoid affecting the product. When the beam current state returns to normal, the injection process is automatically resumed.

[0075] On the basis of the second specific implementation mode, the one-dimensional linear ion beam scanning device is further improved to obtain a third specific implementation mode, and its corresponding structural schematic diagram is as follows: Figure 8 As shown, it includes an ion beam source 10, a controller 30 and two oppositely arranged pole plates 20;

[0076] The ion beam source 10 is disposed between the two pole plates 20 and is used to emit an original ion beam; the original ion beam passes through between the two pole plates 20;

[0077] The pole plate 20 includes an electromagnet 21, and the electromagnets 21 in the two pole plates 20 form an inter-plate magnetic field between the two pole plates 20; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam;

[0078] The controller 30 is electrically connected to the plate 20 and is used to adjust the magnetic field strength of the inter-plate magnetic field so that the original ion beam is deflected to different degrees under different magnetic field strengths to obtain a one-dimensional linear ion beam;

[0079] Also included is a beam detector 50;

[0080] The beam detector 50 is electrically connected to the controller 30 and is used to detect the state parameter of the one-dimensional linear ion beam; the state parameter includes at least one of a stability parameter, a fluctuation parameter, a position parameter and a parallelism parameter;

[0081] The controller 30 is also used to adjust the magnetic field strength of the inter-plate magnetic field to outside the working range when the state parameter is abnormal, so that the original ion beam cannot be emitted from the one-dimensional linear ion beam scanning device;

[0082] Also included is a distribution adjustment component 60;

[0083] The distribution adjustment component 60 includes two adjustment plates 61 arranged opposite to each other;

[0084] A single adjustment electrode plate 61 includes a plurality of electromagnets 21 , and the electromagnets 21 in two adjustment electrodes 61 form an adjustment magnetic field 60 a between the two adjustment electrodes 61 ;

[0085] The controller 30 is electrically connected to the adjustment electrode 61; the controller 30 is also used to adjust the magnetic field strength of the adjustment magnetic field 60a, change the emission direction of the one-dimensional linear ion beam and / or adjust the uniformity of the one-dimensional current ion beam.

[0086] The difference between this specific embodiment and the above specific embodiment is that the distribution adjustment component 60 is additionally provided in this specific embodiment, and the remaining structures are the same as those in the above specific embodiment, which will not be elaborated here.

[0087] In this specific embodiment, the distribution adjustment component 60 can be used to further adjust the beam shape and parallelism, and finally obtain a ribbon beam with high energy uniformity and parallelism that meets the injection requirements. The setting of the two adjustment plates 61 in the distribution adjustment component 60 can refer to the setting method of the two plates 20 in the previous text. The adjustment magnetic field 60a has the same principle as the inter-plate magnetic field, except that it does not require reciprocating scanning to convert the point ion beam into a one-dimensional linear ion beam, but it is necessary to adjust the direction, uniformity and parallelism of the one-dimensional linear ion beam.

[0088] Of course, the setting position of the adjustment plate 61 and the direction of the adjustment magnetic field 60a can be different from or the same as the inter-plate magnetic field. Figure 8 As shown, Figure 8 FIG. 6 is a top view of the one-dimensional linear ion beam scanning device. The distribution adjustment component 60 in the figure generates an irregularly shaped adjustment magnetic field 60a, which changes the propagation direction of the one-dimensional linear ion beam while not changing the propagation plane of the one-dimensional linear ion beam. Fig. 9 , Fig. 9 is a front view of the one-dimensional linear ion beam scanning device, from which it can be seen that Fig. 9 The magnetic field intensity direction of the inter-plate magnetic field is perpendicular to the intensity direction of the adjustment magnetic field 60a, and the distribution adjustment component 60 changes the propagation plane of the one-dimensional linear ion beam.

[0089] The present invention also provides a control method for a one-dimensional linear ion beam scanning device, and a flow chart corresponding to a specific implementation method thereof is shown in FIG. Fig.10 As shown, it is called specific implementation mode 4, the control method of the one-dimensional linear ion beam scanning device is used for any one of the one-dimensional linear ion beam scanning devices described above, including:

[0090] S101: receiving original ion beam information and target linear ion beam information.

[0091] S102: Determine magnetic field periodic variation information according to the original ion beam information and the target linear ion beam information.

[0092] S103: Send the magnetic field periodic change information to the controller, so that the controller adjusts the electromagnets on the two plates according to the magnetic field periodic change information, so that the magnetic field between the plates changes periodically, and the emission position of the original ion beam moves repeatedly within a preset linear area to obtain a one-dimensional linear ion beam.

[0093] The control method of the one-dimensional linear ion beam scanning device in this specific embodiment is applied to the one-dimensional linear ion beam scanning device in the foregoing text, so please refer to the foregoing text for specific technical details, and the present invention will not be repeated here.

[0094] As a preferred embodiment, the control method of the one-dimensional linear ion beam scanning device further includes:

[0095] A1: Acquire the state parameters of the one-dimensional linear ion beam from the beam detector.

[0096] A2: Determine the distribution morphology of the one-dimensional linear ion beam according to the state parameters.

[0097] A3: Determine the area where the beam current is too large and / or the area where the beam current is too small on the one-dimensional linear ion beam according to the distribution morphology.

[0098] A4: Reduce the scanning speed of the area where the beam current passes through a small area, and / or increase the scanning speed of the area where the beam current passes through a large area.

[0099] In this preferred embodiment, the scanning speed of the original ion beam can be adjusted according to the state parameters of the one-dimensional linear ion beam by adjusting the magnetic field between the plates, thereby adjusting the uniformity of the beam injected into the wafer to be processed: the scanning speed is appropriately increased for the positions corresponding to the areas where the beam is too large (areas where the ion implantation dose is too large), and the scanning speed is appropriately reduced for the positions corresponding to the areas where the beam is too small (areas where the ion implantation dose is too small).

[0100] Of course, the state parameters of the one-dimensional linear ion beam may be state parameters collected during the ion implantation stage, or may be state parameters detected during the beam current adjustment stage before the ion implantation stage, which is not limited in the present invention.

[0101] The control method of the one-dimensional linear ion beam scanning device provided by the present invention includes receiving original ion beam information and target linear ion beam information; determining magnetic field periodic change information according to the original ion beam information and the target linear ion beam information; sending the magnetic field periodic change information to the controller 30, so that the controller 30 adjusts the electromagnets 21 on the two electrode plates 20 according to the magnetic field periodic change information, so that the magnetic field between the plates changes periodically, so that the emission position of the original ion beam moves repeatedly in a preset linear area, and obtains a one-dimensional linear ion beam. In an ion implanter, the conventional technology uses an electric field to scan the cations in a point-shaped ion beam, which changes the movement speed of the cations. In the process of approaching the two electrode plates 20, the movement speed of the cations will slow down, and in the process of moving away from the two electrode plates 20, the movement speed of the cations will speed up. The kinetic energy consistency of the cations is poor, which will also lead to poor uniformity of ion implantation. The present invention abandons the electric field and instead uses a magnetic field to control the original ion beam, so that the original ion beam scans in a one-dimensional linear direction at a certain frequency. The Lorentz force exerted by the magnetic field on the ions is always perpendicular to the running direction of the ions. In other words, although the magnetic field changes the motion trajectory of the original ion beam, it will not change the kinetic energy of each ion in the ion beam, and can avoid the unevenness of the kinetic energy of the ions caused by the scanning of the electrode plate 20 in the traditional technology, thereby improving the process uniformity within the ion implantation process surface.

[0102] The present invention also provides an ion implantation scanning system, which includes any one of the one-dimensional linear ion beam scanning devices described above. In an ion implanter, the conventional technology uses an electric field to scan the cations in a point-shaped ion beam, which changes the movement speed of the cations. In the process of approaching the two electrode plates 20, the movement speed of the cations will slow down, and in the process of moving away from the two electrode plates 20, the movement speed of the cations will speed up. The poor consistency of the kinetic energy of the cations will also lead to poor uniformity of ion implantation. The present invention abandons the electric field and instead uses a magnetic field to control the original ion beam, so that the original ion beam scans in a one-dimensional linear direction at a certain frequency. The Lorentz force exerted by the magnetic field on the ions is always perpendicular to the running direction of the ions. In other words, although the magnetic field changes the movement trajectory of the original ion beam, it does not change the kinetic energy of each ion in the ion beam, which can avoid the unevenness of the kinetic energy of the ions caused by the scanning of the electrode plates 20 in the conventional technology, and can also improve the process uniformity within the ion implantation process surface.

[0103] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0104] It should be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0105] The one-dimensional linear ion beam scanning device and its control method provided by the present invention are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A one-dimensional linear ion beam scanning device, characterized in that: It includes an ion beam source, a controller and two oppositely arranged pole plates; The ion beam source is disposed between the two plates and is used to emit an original ion beam; the original ion beam passes through between the two plates; The pole plates include electromagnets, and the electromagnets in the two pole plates form an inter-plate magnetic field between the two pole plates; the magnetic field direction of the inter-plate magnetic field is perpendicular to the direction of the original ion beam; The controller is electrically connected to the pole plates and is used to adjust the magnetic field strength of the inter-plate magnetic field so that the original ion beam is deflected to different degrees under different magnetic field strengths to obtain a one-dimensional linear ion beam.

2. The one-dimensional linear ion beam scanning device according to claim 1, characterized in that: Each of the pole plates includes a plurality of the electromagnets.

3. The one-dimensional linear ion beam scanning device according to claim 2, characterized in that: The inter-plate magnetic field includes a plurality of unidirectional magnetic field regions; The magnetic field direction and magnetic field strength in a single unidirectional magnetic field region are the same.

4. The one-dimensional linear ion beam scanning device according to claim 1, characterized in that: The controller is also used to adjust the magnetic field direction of the inter-plate magnetic field.

5. The one-dimensional linear ion beam scanning device according to claim 1, characterized in that: The magnetic field direction of the inter-plate magnetic field is perpendicular to the pole plates.

6. The one-dimensional linear ion beam scanning device according to claim 1, characterized in that: The magnetic field direction of the inter-plate magnetic field is parallel to the plane where the pole plates are located.

7. The one-dimensional linear ion beam scanning device according to claim 1, characterized in that: Also included is a beam detector; The beam detector is electrically connected to the controller and is used to detect the state parameter of the one-dimensional linear ion beam; the state parameter includes at least one of a stability parameter, a fluctuation parameter, a position parameter and a parallelism parameter; The controller is also used to adjust the magnetic field strength of the inter-plate magnetic field to outside the working range when the state parameter is abnormal, so that the original ion beam cannot be emitted from the one-dimensional linear ion beam scanning device.

8. The one-dimensional linear ion beam scanning device according to claim 1, characterized in that: Also included is a distribution adjustment component; The distribution adjustment component includes two adjustment plates arranged opposite to each other; A single adjustment electrode plate includes a plurality of electromagnets, and the electromagnets in two adjustment electrodes form an adjustment magnetic field between the two adjustment electrodes; The controller is electrically connected to the adjustment electrode plate; the controller is also used to adjust the magnetic field strength of the adjustment magnetic field, change the emission direction of the one-dimensional linear ion beam and / or adjust the uniformity of the one-dimensional current ion beam.

9. A control method for a one-dimensional linear ion beam scanning device, characterized in that: The control method of the one-dimensional linear ion beam scanning device is used for the one-dimensional linear ion beam scanning device according to any one of claims 1 to 9, comprising: receiving original ion beam information and target linear ion beam information; Determine magnetic field periodic variation information according to the original ion beam information and the target linear ion beam information; The magnetic field periodic change information is sent to the controller, so that the controller adjusts the electromagnets on the two plates according to the magnetic field periodic change information, so that the magnetic field between the plates changes periodically, and the exit position of the original ion beam moves repeatedly in a preset linear area to obtain a one-dimensional linear ion beam.

10. The control method of the one-dimensional linear ion beam scanning device according to claim 9, characterized in that: Also includes: Acquire the state parameters of the one-dimensional linear ion beam from the beam detector; Determining the distribution morphology of the one-dimensional linear ion beam according to the state parameter; Determine, according to the distribution morphology, a beam-excessive region and / or a beam-excessive region on the one-dimensional linear ion beam; The scanning speed of the area where the beam current passes through is reduced, and / or the scanning speed of the area where the beam current passes through is increased.

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