Resistance adjusting circuit, silicon carbide device and electronic equipment

Abstract

The invention provides a resistance adjusting circuit, a silicon carbide device and electronic equipment. The resistance adjusting circuit is provided with a resistance adjusting structure, a first input end of the resistance adjusting structure is used for receiving a starting signal to start a chip, and a second input end of the resistance adjusting structure is used for receiving a resistance adjusting signal, so that the resistance of the resistance adjusting structure is adjusted according to the resistance adjusting signal, and the opening speed of the chip is adjusted; compared with the prior art, the adjustment of the turn-on speed of the chip is realized, so that the problem that the prior art lacks a technical scheme for adjusting the turn-on speed of the silicon carbide chip is solved.

Description

Technical Field

[0001] The present application relates to the technical field of silicon carbide devices, and in particular to a resistance adjustment circuit, a silicon carbide device and an electronic device. Background Art

[0002] Power devices are gradually developing in the direction of high voltage and high current. On the one hand, multiple chips need to be connected in parallel inside the device to meet parameter requirements. Due to the fast switching speed of silicon carbide chips, the chip current sharing problem becomes more serious. In addition, multiple chips in parallel require multiple sets of signal-side loop lines. The currently used bonding aluminum wires increase the complexity, difficulty and failure risk of device packaging. Therefore, it is necessary to design a more robust and intelligent signal loop module to control the drive side of the module.

[0003] At the same time, the device appearance needs to have enough space to meet insulation requirements (such as external creepage of high-voltage devices) and certain specifications (such as general-purpose 62mm devices), and the internal utilization rate of existing modules is low.

[0004] In summary, it can be seen that the existing solutions lack a technical solution for adjusting the activation speed of silicon carbide chips. Summary of the invention

[0005] The main purpose of the present application is to provide a resistance adjustment circuit, a silicon carbide device and an electronic device, so as to at least solve the problem that the existing solutions lack a technical solution for adjusting the opening speed of the silicon carbide chip.

[0006] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a resistance adjustment circuit is provided, the resistance adjustment circuit comprising: a resistance adjustment structure having a first input end, a second input end and an output end, the output end of the resistance adjustment structure being used to be electrically connected to a chip, the first input end of the resistance adjustment structure being used to receive a start signal, the start signal being used to start the chip, the second input end of the resistance adjustment structure being used to receive a resistance adjustment signal, the resistance adjustment structure being used to adjust the resistance of the resistance adjustment structure according to the resistance adjustment signal, so as to adjust the turn-on speed of the chip.

[0007] Optionally, the resistance adjustment structure includes:

[0008] A microprocessor, wherein an input terminal of the microprocessor is used to receive the resistance adjustment signal;

[0009] A resistance value replacement module, comprising a plurality of paths, wherein a first input end of each path in the resistance value replacement module is electrically connected to an output end of the microprocessor, a second input end of each path in the resistance value replacement module is used to receive the start signal, and an output end of each path in the resistance value replacement module is used to be electrically connected to the chip;

[0010] The microprocessor is used to output a high level signal at an output end corresponding to the microprocessor according to the resistance adjustment signal to turn on the corresponding path in the resistance change module to adjust the resistance of the resistance change module.

[0011] Optionally, each of the paths in the resistance value replacement module includes a resistance module and a transistor, the first end of the resistance module is used to receive the start signal, the gate of the transistor is electrically connected to an output end of the microprocessor, the drain of the transistor is electrically connected to the second end of the resistance module, and the source of the transistor is electrically connected to the chip.

[0012] Optionally, the resistance adjustment structure further includes a transformer, an input end of the transformer is used to receive the resistance adjustment signal, and an output end of the transformer is electrically connected to an input end of the microprocessor.

[0013] Optionally, the resistance adjustment structure further includes a power switch device, and the power switch device is electrically connected between the chip and an output end of one of the paths in the resistance replacement module.

[0014] According to another aspect of the present application, a silicon carbide device is provided, and the silicon carbide device includes a chip and any one of the resistance adjustment circuits described above.

[0015] Optionally, the silicon carbide device further includes a flexible circuit board, a connection structure and a lining plate, wherein the flexible circuit board is electrically connected to the first input end of the resistance adjustment structure, and the flexible circuit board uses the connection structure to form an electrical connection with the chip.

[0016] Optionally, the connection structure includes an insulating material plate and a metal terminal, and the insulating material plate uses the metal terminal to electrically connect the flexible circuit board to the chip.

[0017] Optionally, a groove matching a preset portion of the chip is provided on the insulating material plate to play an insulating role, and the preset portion represents a portion between adjacent bonding areas on the chip.

[0018] According to another aspect of the present application, an electronic device is provided, which includes any one of the silicon carbide devices described above.

[0019] By applying the technical solution of the present application, a resistance adjustment structure is set, and a start signal is received at the first input end of the resistance adjustment structure to start the chip, and a resistance adjustment signal is received at the second input end of the resistance adjustment structure, so that the resistance of the resistance adjustment structure is adjusted according to the resistance adjustment signal to adjust the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thereby solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of the silicon carbide chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0021] Figure 1 A schematic diagram of a resistance adjustment circuit provided according to an embodiment of the present application is shown;

[0022] Figure 2 A schematic diagram showing the connection between the resistance adjustment structure and the chip provided in an embodiment of the present application is shown;

[0023] Figure 3 A schematic diagram showing the connection between multiple resistance adjustment structures and chips provided according to an embodiment of the present application is shown;

[0024] Figure 4 A first schematic diagram of a silicon carbide device provided according to an embodiment of the present application is shown;

[0025] Figure 5 A second schematic diagram of a silicon carbide device provided according to an embodiment of the present application is shown;

[0026] Figure 6 A schematic diagram of a metal terminal provided according to an embodiment of the present application is shown;

[0027] Figure 7 A schematic diagram of a product structure provided according to an embodiment of the present application is shown.

[0028] The above drawings include the following reference numerals:

[0029] 100, resistance adjustment structure; 110, resistance replacement module; 200, chip; 300, flexible circuit board; 400, insulating material board; 410, groove; 500, metal terminal; 510, upper raised ring; 520, lower raised ring; 600, lining plate; 700, first terminal; 800, second terminal. DETAILED DESCRIPTION

[0030] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0031] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0032] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0033] As introduced in the background technology, power devices are gradually developing towards high voltage and high current. On the one hand, multiple chips need to be connected in parallel inside the device to meet parameter requirements. Since the switching speed of silicon carbide chips is relatively fast, the chip current sharing problem becomes more serious. In addition, multiple chips need to be connected in parallel with multiple groups of signal side loop lines. The currently used bonding aluminum wires and other forms increase the complexity, difficulty and failure risk of device packaging. Therefore, it is necessary to design a more robust and intelligent signal loop module to control the driving side of the module. In order to solve the problem that the existing scheme lacks a technical solution for adjusting the opening speed of silicon carbide chips, the embodiments of the present application provide a resistance adjustment circuit, a silicon carbide device and an electronic device.

[0034] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0035] The present application provides a resistance adjustment circuit, such as Figure 1As shown, the resistance adjustment circuit includes: a resistance adjustment structure 100, having a first input terminal, a second input terminal and an output terminal, the output terminal of the resistance adjustment structure is used to be electrically connected to the chip, the first input terminal of the resistance adjustment structure is used to receive a start signal In1, the start signal is used to start the chip, the second input terminal of the resistance adjustment structure is used to receive a resistance adjustment signal In2, the resistance adjustment structure is used to adjust the resistance of the resistance adjustment structure according to the resistance adjustment signal, so as to adjust the turn-on speed of the chip.

[0036] In the above-mentioned resistance adjustment circuit, a resistance adjustment structure is set, and a start signal is received at the first input end of the resistance adjustment structure to start the chip, and a resistance adjustment signal is received at the second input end of the resistance adjustment structure, so that the resistance of the above-mentioned resistance adjustment structure is adjusted according to the above-mentioned resistance adjustment signal to adjust the turn-on speed of the above-mentioned chip. Compared with the existing scheme, the turn-on speed of the chip is adjusted, thereby solving the problem that the existing scheme lacks a technical solution for adjusting the turn-on speed of the silicon carbide chip.

[0037] In one embodiment of the present application, Figure 2 As shown ( Figure 2 The resistance adjustment structure is not shown. The microprocessor and the resistance change module together constitute the resistance adjustment structure. The resistance adjustment structure includes:

[0038] A microprocessor MCU, wherein an input terminal IN of the microprocessor is used to receive the resistance adjustment signal;

[0039] The resistance value changing module 110 includes a plurality of paths, wherein the first input end of each of the paths in the resistance value changing module is respectively connected to an output end (such as Figure 2 As shown, the output ends of the MCU are OUT1, OUT2, and OUT3 in sequence) electrically connected, the second input end of each of the above-mentioned paths in the above-mentioned resistance value replacement module is used to receive the above-mentioned start signal, and the output end of each of the above-mentioned paths in the above-mentioned resistance value replacement module is used to be electrically connected to the above-mentioned chip 200;

[0040] like Figure 3 (Although Figure 3Multiple Q4s are not shown, but each chip has a corresponding Q4). As shown in FIG. 1 , there can be multiple resistance replacement modules 110, each corresponding to a chip. Then, a microprocessor can be used to adjust the opening speed of multiple chips at the same time, that is, a resistance replacement module for multiple parallel chips is set inside a resistance adjustment structure to perform independent adjustments, thereby improving current sharing and weakening the effect of adjusting the parallel chips separately to achieve current sharing: by weakening the separate adjustment of the parallel chips, the complexity of design and debugging can be reduced and production efficiency can be improved; the required parts and materials can be reduced, thereby reducing production costs; reducing the complexity of adjustment and maintenance can improve the reliability of the system and reduce the failure rate; through current sharing control, power consumption can be effectively reduced and energy utilization efficiency can be improved; weakening the separate adjustment of the parallel chips can make the system more stable and reduce instability caused by errors. In general, weakening the effect of adjusting the parallel chips separately to achieve current sharing can make the system simpler, more efficient and more reliable.

[0041] The microprocessor is used to output a high level signal at the output end corresponding to the microprocessor according to the resistance adjustment signal to conduct the corresponding path in the resistance change module to adjust the resistance of the resistance change module.

[0042] Specifically, multiple resistance replacement modules can be provided, and each resistance replacement module is electrically connected to a power switch device. The MCU calculates the control logic according to the resistance adjustment signal and the gate voltage signal of each MOS chip, thereby determining which gate resistance branches (i.e., paths) should be opened by the resistance replacement module corresponding to each MOS chip.

[0043] The multi-layer line strip of the gate resistance branch (i.e., setting up multiple paths) realizes the individual control of each chip in the power device and the free selection of the driving resistance, which facilitates the consistent regulation of the parameters of each chip in the power device and can flexibly adjust the operation of each chip.

[0044] In one embodiment of the present application, each of the above-mentioned paths in the above-mentioned resistance value replacement module respectively includes a resistance module and a transistor, the first end of the above-mentioned resistance module is used to receive the above-mentioned start signal, the gate of the above-mentioned transistor is electrically connected to an output end of the above-mentioned microprocessor, the drain of the above-mentioned transistor is electrically connected to the second end of the above-mentioned resistance module, and the source of the above-mentioned transistor is electrically connected to the above-mentioned chip.

[0045] Specifically, Figure 2 As shown, R1 and Q1 form a path, R2 and Q2 form a path, and R3 and Q3 form a path, and each path is electrically connected to an output terminal of the MCU. Through the combination of different gate resistance branches, the gate resistance of each MOS chip can be set to a different value, thereby adjusting the opening speed of the MOS chip.

[0046] In one embodiment of the present application, Figure 2 As shown, the resistance adjustment structure further includes a transformer T1, the input end of the transformer is used to receive the resistance adjustment signal, and the output end of the transformer is electrically connected to the input end of the microprocessor.

[0047] Specifically, transformers are used to isolate signals.

[0048] In one embodiment of the present application, the resistance adjustment structure further includes a power switch device, and the power switch device is electrically connected between the chip and an output end of one of the paths in the resistance change module.

[0049] Specifically, the power switch device may be a transistor, which functions to provide isolation capability.

[0050] The present application also provides a silicon carbide device, such as Figure 4 As shown, the silicon carbide device includes a chip 200 and any one of the above-mentioned resistance adjustment circuits 100 .

[0051] In the above-mentioned silicon carbide device, a resistance adjustment structure is provided, and a start signal is received at the first input end of the resistance adjustment structure to start the chip, and a resistance adjustment signal is received at the second input end of the resistance adjustment structure, so that the resistance of the resistance adjustment structure is adjusted according to the resistance adjustment signal to adjust the turn-on speed of the above-mentioned chip. Compared with the existing scheme, the turn-on speed of the chip is adjusted, thereby solving the problem that the existing scheme lacks a technical solution for adjusting the turn-on speed of the silicon carbide chip.

[0052] In one embodiment of the present application, Figure 5 As shown, the silicon carbide device further includes a flexible circuit board 300, a connection structure (the connection structure includes an insulating material plate 400 and a metal terminal 500, and the insulating material plate uses the metal terminal to make the flexible circuit board and the chip form an electrical connection) and a liner 600, and the flexible circuit board is electrically connected to the first input end of the resistance adjustment structure ( Figure 5 The connection between the above-mentioned flexible circuit board and the above-mentioned resistance adjustment structure is not shown), and the above-mentioned flexible circuit board adopts the above-mentioned connection structure to form an electrical connection with the above-mentioned chip.

[0053] Specifically, an upper raised ring and a lower raised ring are provided on the metal terminal, which realize a snap-fitting effect when installed on the PCB board, thereby preventing the metal terminal and the PCB board (i.e., the flexible circuit board) from falling off during movement or inversion of the packaged device.

[0054] In one embodiment of the present application, Figure 5As shown, the insulating material plate 400 is provided with a groove 410 that matches the preset part of the chip 200 to play an insulating role (further ensuring the effective isolation between adjacent first bonding areas, avoiding mutual interference between signals and currents, and enhancing the electrical performance of the chip assembly). The preset part represents the part between adjacent bonding areas on the chip to perform electrical isolation, prevent short circuits, and improve electrical safety. The groove 410 is provided to prevent the Kelvin source and gate on the surface of the chip from being electrically connected after 400 is interconnected with the chip 200. "Kelvin" comes from the "Kelvin connection" in the circuit, which originally refers to the technology of avoiding the introduction of additional parasitic parameters through methods such as four-wire system to perform precise measurements. In the application of silicon carbide devices, the "Kelvin source" refers to the decoupling of the power circuit and the drive circuit of the silicon carbide chip by leading out a dedicated electrical connection for the drive circuit at the source of the silicon carbide chip, thereby improving the switching speed of the device and reducing losses and oscillations.

[0055] like Figure 6 As shown, an upper raised ring 510 and a lower raised ring 520 are provided on the metal terminal 500, which realize a snap-fitting effect when installed on the PCB board (the metal terminal can be either a discrete structure or a structure that is originally integrated with the insulating material board), preventing the metal terminal and the PCB board from falling off during movement or inversion of the device after packaging.

[0056] like Figure 7 As shown, the product structure shows a resistance adjustment structure 100, a chip 200, a flexible circuit board 300, a liner 600, a first terminal 700 and a second terminal 800. The first terminal 700 is used to receive a start signal In1, and the second terminal 800 is used to receive a resistance adjustment signal In2. The first terminal is electrically connected to a first input end of the resistance adjustment structure, and the second terminal is electrically connected to a second end of the resistance adjustment structure. The discrete metal terminals can be connected to the structure (i.e., an insulating material plate and a metal terminal) by spiral assembly, and further connected to the flexible circuit board.

[0057] This product structure realizes the bond-free design of the auxiliary circuit of the power device, which makes the layout more flexible, improves the overall reliability of the device and simplifies the packaging process.

[0058] The present application also provides an electronic device, which includes any one of the above-mentioned silicon carbide devices. By setting a resistance adjustment structure, a first input end of the resistance adjustment structure is used to receive a start signal to start the chip, and a second input end of the resistance adjustment structure is used to receive a resistance adjustment signal, so that the resistance of the resistance adjustment structure is adjusted according to the resistance adjustment signal to adjust the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thereby solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of the silicon carbide chip.

[0059] It should be noted that the above electrical connection can be a direct electrical connection or an indirect electrical connection. Direct electrical connection means that two devices are directly connected, and indirect electrical connection means that other devices such as capacitors and resistors are also connected between the connected A and B.

[0060] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0061] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0062] 1) The resistance adjustment circuit of the present application, by setting a resistance adjustment structure, receives a start signal at the first input end of the resistance adjustment structure to start the chip, and receives a resistance adjustment signal at the second input end of the resistance adjustment structure, thereby adjusting the resistance of the resistance adjustment structure according to the resistance adjustment signal to adjust the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thereby solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of the silicon carbide chip.

[0063] 2) The silicon carbide device of the present application, by setting a resistance adjustment structure, receives a start signal at the first input end of the resistance adjustment structure to start the chip, and receives a resistance adjustment signal at the second input end of the resistance adjustment structure, thereby adjusting the resistance of the resistance adjustment structure according to the resistance adjustment signal to adjust the turn-on speed of the chip. Compared with the existing solution, the turn-on speed of the chip is adjusted, thereby solving the problem that the existing solution lacks a technical solution for adjusting the turn-on speed of the silicon carbide chip.

[0064] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A resistance adjustment circuit, characterized in that: include: The resistance adjustment structure comprises a first input end, a second input end and an output end, wherein the output end of the resistance adjustment structure is used to be electrically connected to a chip, the first input end of the resistance adjustment structure is used to receive a start signal, and the start signal is used to start the chip, the second input end of the resistance adjustment structure is used to receive a resistance adjustment signal, and the resistance adjustment structure is used to adjust the resistance of the resistance adjustment structure according to the resistance adjustment signal to adjust the turn-on speed of the chip.

2. The resistance adjustment circuit according to claim 1, characterized in that: The resistance adjustment structure comprises: A microprocessor, wherein an input terminal of the microprocessor is used to receive the resistance adjustment signal; A resistance value replacement module, comprising a plurality of paths, wherein a first input end of each path in the resistance value replacement module is electrically connected to an output end of the microprocessor, a second input end of each path in the resistance value replacement module is used to receive the start signal, and an output end of each path in the resistance value replacement module is used to be electrically connected to the chip; The microprocessor is used to output a high level signal at an output end corresponding to the microprocessor according to the resistance adjustment signal to turn on the corresponding path in the resistance change module to adjust the resistance of the resistance change module.

3. The resistance adjustment circuit according to claim 2, characterized in that: Each of the paths in the resistance value replacement module includes a resistance module and a transistor, wherein the first end of the resistance module is used to receive the start signal, the gate of the transistor is electrically connected to an output end of the microprocessor, the drain of the transistor is electrically connected to the second end of the resistance module, and the source of the transistor is electrically connected to the chip.

4. The resistance adjustment circuit according to claim 2, characterized in that: The resistance adjustment structure further includes a transformer, an input end of the transformer is used to receive the resistance adjustment signal, and an output end of the transformer is electrically connected to an input end of the microprocessor.

5. The resistance adjustment circuit according to claim 2, characterized in that: The resistance adjustment structure further includes a power switch device, and the power switch device is electrically connected between the chip and an output end of one of the paths in the resistance change module.

6. A silicon carbide device, characterized in that: include: A chip and a resistance adjusting circuit as claimed in any one of claims 1 to 5.

7. The silicon carbide device according to claim 6, characterized in that: The silicon carbide device also includes a flexible circuit board, a connection structure and a liner. The flexible circuit board is electrically connected to the first input end of the resistance adjustment structure. The flexible circuit board uses the connection structure to form an electrical connection with the chip.

8. The silicon carbide device according to claim 7, characterized in that: The connection structure includes an insulating material plate and a metal terminal, and the insulating material plate uses the metal terminal to form an electrical connection between the flexible circuit board and the chip.

9. The silicon carbide device according to claim 8, characterized in that: The insulating material plate is provided with a groove matched with a preset portion of the chip to play an insulating role, and the preset portion represents a portion between adjacent bonding areas on the chip.

10. An electronic device, characterized in that: include: A silicon carbide device as claimed in any one of claims 6 to 9.

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