Photoelectric device, preparation method of photoelectric device and electronic equipment

Abstract

The invention discloses a photoelectric device, a preparation method of the photoelectric device and electronic equipment, the photoelectric device comprises a bottom electrode and a top electrode which are oppositely arranged, a functional layer arranged between the bottom electrode and the top electrode, and an auxiliary layer arranged on one side, far away from the functional layer, of the top electrode, the material of the auxiliary layer comprises a heavy metal adsorption material, so that the auxiliary layer has a heavy metal adsorption function, the risk of heavy metal leakage is effectively reduced on the premise that the performance of a functional layer in the photoelectric device is not affected, the application field of the photoelectric device is widened, the electronic equipment comprises the photoelectric device, and the photoelectric device is applied to the electronic equipment. And the heavy metal leakage risk of the electronic equipment is reduced.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to an optoelectronic device, a method for preparing an optoelectronic device, and an electronic device. Background Art

[0002] Photoelectric devices refer to a type of device made using the photoelectric effect of semiconductors, including but not limited to photoelectric devices, solar cells or photodetectors. Taking light-emitting devices as an example, light-emitting devices include but are not limited to organic light-emitting diodes 10 (Organic Light-Emitting Diode, OLED) and quantum dot light-emitting diodes (Quantum Dot Light-Emitting Diodes, QLED). OLED / QLED has a "sandwich" structure, that is, it includes an anode, a cathode and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of OLED / QLED is: electrons are injected from the cathode of the device into the light-emitting area, and holes are injected from the anode of the device into the light-emitting area. Electrons and holes are recombined in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in performance indicators and have shown great potential for application development. However, optoelectronic devices have the risk of heavy metal leakage, which limits the application of optoelectronic devices. Therefore, how to reduce the risk of heavy metal leakage in optoelectronic devices is of great significance to the application and development of optoelectronic devices. Summary of the invention

[0004] The present application provides a photoelectric device, a method for preparing the photoelectric device, and an electronic device to improve the device life of the photoelectric device.

[0005] In a first aspect, an embodiment of the present application provides an optoelectronic device, including:

[0006] A bottom electrode and a top electrode are arranged opposite to each other;

[0007] a functional layer disposed between the bottom electrode and the top electrode; and

[0008] An auxiliary layer, disposed on a side of the top electrode away from the functional layer;

[0009] Wherein, the material of the auxiliary layer includes heavy metal adsorption material.

[0010] Optionally, the heavy metal adsorption material comprises one or more of mineral soil adsorbent, lignin, chitosan, xanthate, chelating resin, carbon material, silica gel and mesoporous metal oxide.

[0011] Optionally, the heavy metal adsorption material includes a first material and a second material, the first material is selected from one or more of mineral soil adsorbents, lignin, chitosan, xanthate, chelating resin and silica gel, and the second material is selected from one or more of carbon materials and mesoporous metal oxides.

[0012] Optionally, the mineral soil adsorbent is selected from one or more of diatomaceous earth, zeolite and kaolin; and / or

[0013] The xanthate is selected from one or more of methyl methacrylate, ethyl methyl acrylate and isopropyl methyl acrylate; and / or

[0014] The carbon material is selected from one or more of graphene, activated carbon and carbon nanotubes; and / or

[0015] The mesoporous metal oxide is selected from one or more of mesoporous TiO2, mesoporous ZnO, mesoporous SnO2 and mesoporous Al2O3, and / or the specific surface area of ​​the mesoporous metal oxide is 100 m 2 / g~1000m 2 / g, and / or the average particle size of the mesoporous metal oxide is 2nm to 20nm; and / or

[0016] The heavy metal adsorption material consists of a first material and a second material.

[0017] Optionally, the mass ratio of the first material to the second material is 1:(1-5).

[0018] Optionally, the auxiliary layer has a thickness of 50 nm to 500 nm; and / or

[0019] The materials of the bottom electrode and the bottom electrode are independently selected from one or more of metals, carbon materials and first metal oxides; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the first metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3.

[0020] Optionally, the optoelectronic device is a light-emitting device, the functional layer comprises a light-emitting layer, and the material of the light-emitting layer comprises one or more of an organic light-emitting material and quantum dots;

[0021] The organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2 + , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation.

[0022] Optionally, one of the bottom electrode and the top electrode is an anode, and the other is a cathode;

[0023] The functional layer also includes a first electronic functional layer arranged between the cathode and the light-emitting layer, and the material of the first electronic functional layer includes a doped or undoped first inorganic compound, wherein the undoped first inorganic compound is selected from one or more of a second metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the second metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2, and / or the IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe and CdS, and / or the IIIA-VA semiconductor material is selected from one or more of InP and GaP, and / or the IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS; and / or the doping element in the doped first inorganic compound is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin; and / or

[0024] The photoelectric device also includes a first hole functional layer disposed between the anode and the light-emitting layer, wherein the material of the first hole functional layer includes a doped or undoped second inorganic compound, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-di(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)phenylamine]], triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[ 4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, One or more of 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyaniline and polypyrrole, wherein the undoped second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and the doping element in the doped second inorganic compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0025] Optionally, the optoelectronic device is a solar cell, the functional layer comprises a light absorbing layer, the material of the light absorbing layer comprises perovskite quantum dots, the general structural formula of the perovskite quantum dots is DMX3, wherein D is selected from methylamine ions, FA ions, Cs + and K + One or more of, M is selected from Pb 2+ Sn2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2 + and Eu 2+ One or more of, X is a halogen anion;

[0026] One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the photoelectric device further comprises a second electronic functional layer disposed between the cathode and the light absorbing layer, wherein the material of the second electronic functional layer comprises one or more of TiO2, SnO2, ZnO, PCBM and C60;

[0027] The photoelectric device further comprises a second hole function layer disposed between the cathode and the light absorption layer, wherein the material of the second hole function layer comprises NiO x 、MoO x , CuCrO2, CuCaO2, CuAlO2, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) or more thereof.

[0028] In a second aspect, the present application also provides a method for preparing a photoelectric device, comprising the following steps:

[0029] providing a bottom electrode, and forming a functional layer on one side of the bottom electrode;

[0030] forming a top electrode on a side of the functional layer away from the bottom electrode; and

[0031] A dispersion containing a heavy metal adsorption material is deposited on a side of the top electrode away from the functional layer, and then the deposited dispersion is dried to obtain an auxiliary layer.

[0032] Optionally, the concentration of the heavy metal adsorption material in the dispersion is 10 mg / mL to 50 mg / mL; and / or

[0033] The dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds; optionally, the alkane is selected from one or more of nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, and / or the aromatic hydrocarbon is selected from one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and One or more of 1-methylnaphthalene or indene, and / or the halogenated alkane is selected from one or more of dichloromethane, chloroform and carbon tetrachloride, and / or the alcohol compound is selected from one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, and / or the ether compound is selected from ethylene glycol monomethyl ether, and / or the furan compound is selected from tetrahydrofuran, and / or the pyridine compound is selected from pyridine, and / or the amide compound is selected from N,N-dimethylformamide; and / or

[0034] The heavy metal adsorption material comprises one or more of mineral soil adsorbent, lignin, chitosan, xanthate, chelating resin, carbon material, silica gel and mesoporous metal oxide.

[0035] In a third aspect, the present application further provides an electronic device, comprising the optoelectronic device as described in any one of the first aspects, or the optoelectronic device manufactured by the preparation method as described in any one of the second aspects.

[0036] The present application provides an optoelectronic device, a method for preparing an optoelectronic device, and an electronic device, which have the following technical effects:

[0037] In the optoelectronic device, an auxiliary layer is added on the side of the top electrode away from the functional layer, and the material of the auxiliary layer contains a heavy metal adsorption material so that the auxiliary layer has a heavy metal adsorption function. This effectively reduces the risk of heavy metal leakage without affecting the performance of the functional layer in the optoelectronic device, thereby broadening the application field of the optoelectronic device.

[0038] The electronic device includes the optoelectronic device, which is beneficial to reducing the risk of heavy metal leakage of the electronic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0040] Figure 1 A schematic diagram of the structure of a first optoelectronic device provided in an embodiment of the present application;

[0041] Figure 2 A schematic diagram of the structure of a second optoelectronic device provided in an embodiment of the present application;

[0042] Figure 3 A schematic structural diagram of a second optoelectronic device provided in an embodiment of the present application.

[0043] The reference numerals are as follows:

[0044] 10: optoelectronic device, 11: bottom electrode, 12: top electrode, 13: functional layer, 14: auxiliary layer, 131: light-emitting layer, 132: first electron functional layer, 133: first hole functional layer, 134: light absorption layer, 135: second electron functional layer, 136: second hole functional layer, 1331: hole injection layer, 1332: hole transport layer. DETAILED DESCRIPTION

[0045] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0046] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0047] It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be presented in the form of a range. It should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0048] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the optoelectronic device in actual use or working state, specifically the drawing direction in the attached drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish a sequence.

[0049] The term "including" means "including but not limited to".

[0050] The term "and / or" is used to describe the association relationship of associated objects, indicating that there may be three relationships. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural.

[0051] The term "at least one" refers to one or more, and "more than one" refers to two or more. The term "at least one", "the following at least one" or similar expressions refer to any combination of these items, including any combination of a single or multiple. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e. a and b), ac, bc or abc, where a, b and c can be single or multiple, respectively.

[0052] In the present application, “layer A is formed on one side of layer B”, “layer A is formed on the side of layer B away from layer C” or similar descriptions can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacing structure layers can be formed between layer A and layer B. Similarly, “layer A is arranged on one side of layer B”, “layer A is arranged on the side of layer B away from layer C” can be expressed as layer A is in direct contact with layer B, or as other spacing structure layers are arranged between layer A and layer B; “layer A is arranged between layer B and layer C” can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and layer A is in direct contact with layer C.

[0053] The applicant has found that some optoelectronic devices contain heavy metal elements. For example, quantum dots in QLEDs and perovskite solar cells usually contain heavy metal elements. Although the optoelectronic devices are provided with an encapsulation layer, the encapsulation layer will fall off over time, changes in environmental factors, external forces and other factors, resulting in the risk of heavy metal leakage in the optoelectronic devices.

[0054] Based on this, the embodiment of the present application provides a photoelectric device, which can be a positive structure or an inverted structure. The photoelectric device includes but is not limited to a light emitting device, a solar cell or a photodetector, such as Figure 1 As shown, the photoelectric device 10 includes a bottom electrode 11, a top electrode 12, a functional layer 13 and an auxiliary layer 14, wherein the bottom electrode 11 and the top electrode 12 are arranged opposite to each other, the functional layer 13 is arranged between the bottom electrode 11 and the top electrode 12, and the auxiliary layer 14 is arranged on the side of the top electrode 12 away from the functional layer 13, wherein the material of the auxiliary layer 14 includes heavy metal adsorption material.

[0055] In the optoelectronic device of the embodiment of the present application, an auxiliary layer 14 is added on the side of the top electrode 12 away from the functional layer 13, and the material of the auxiliary layer 14 includes a heavy metal adsorption material, so that the auxiliary layer 14 has a heavy metal adsorption function, specifically adsorbing heavy metal ions leaked from the bottom electrode, the top electrode and the functional layer, such as Cu 2+ 、Cd 2+ , Hg 2+ , Pb 2+ , Mn 2+ 、Ni 2+ Etc., thereby effectively reducing the risk of heavy metal leakage without affecting the performance of the functional layer in the optoelectronic device, thereby broadening the application field of the optoelectronic device 10.

[0056] In some embodiments of the present application, the heavy metal adsorption material comprises one or more of mineral soil adsorbent, lignin, chitosan, xanthate, chelating resin, carbon material, silica gel and mesoporous metal oxide.

[0057] In some embodiments of the present application, the heavy metal adsorption material includes a first material and a second material, and the heavy metal adsorption material is exemplified as being composed of the first material and the second material, wherein the first material is selected from one or more of mineral soil adsorbents, lignin, chitosan, xanthate, chelate resin and silica gel, and the second material is selected from one or more of carbon materials and mesoporous metal oxides. The first material can effectively adsorb heavy metals at room temperature and a wide pH range. Furthermore, xanthate and chelate resin have chelating properties, can react with heavy metals to form complexes, and quickly generate insoluble, low-water-content, easily filtered and removed flocculent precipitates in a short time. The second material has a nanoporous structure, which can bind the adsorbed heavy metals in the pores, so that it is not easy to volatilize to the outside world; in addition, the second material has a high conductivity and can form a composite electrode with the top electrode, thereby improving the conductivity of the photoelectric device, effectively reducing the internal resistance, and being conducive to improving the photoelectric performance of the photoelectric device.

[0058] In some embodiments of the present application, the heavy metal adsorption material consists of a first material and a second material.

[0059] In some embodiments of the present application, the natural mineral soil adsorbent is selected from one or more of diatomaceous earth, zeolite and kaolin; and / or, the xanthate is selected from one or more of methyl methacrylate, ethyl methyl acrylate and isopropyl methyl acrylate; and / or, the carbon material is selected from one or more of graphene, activated carbon and carbon nanotubes; and / or, the mesoporous metal oxide is selected from one or more of mesoporous TiO2, mesoporous ZnO, mesoporous SnO2 and mesoporous Al2O3; and / or, the specific surface area of ​​the mesoporous metal oxide is 100m 2 / g~1000m 2 / g, and / or the average particle size of the mesoporous metal oxide is 2nm to 20nm.

[0060] In order to further reduce the risk of heavy metal leakage and ensure that the optoelectronic device 10 has good conductivity, in some embodiments of the present application, the mass ratio of the first material to the second material is 1:(1-5), for example, it can be 1:1, 1:2, 1:3, 1:4, 1:5 or a ratio between any two of the foregoing ratios.

[0061] Under the premise of ensuring that the auxiliary layer 14 has a good heavy metal adsorption effect, in order to reduce the preparation cost and operating power consumption of the optoelectronic device 10, in some embodiments of the present application, the thickness of the auxiliary layer 14 is 50nm to 500nm, for example, it can be 50nm, 100nm, 200nm, 300nm, 400nm, 500nm or a value between any two of the aforementioned values.

[0062] In order to further improve the photoelectric performance of the photoelectric device 10, in some embodiments of the present application, the materials of the bottom electrode 11 and the top electrode 12 are independently selected from one or more of metals, carbon materials and first metal oxides. Among them, the metal includes but is not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg; the carbon material includes but is not limited to one or more of graphite, carbon nanotubes, graphene and carbon fiber; the first metal oxide can be doped or undoped, and the doped first metal oxide includes but is not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) and magnesium-doped zinc oxide (MZO), and the undoped first metal oxide includes but is not limited to one or more of TiO2, SnO2, ZnO and In2O3.

[0063] It should be noted that the bottom electrode 11 or the top electrode 12 can also be a composite electrode, which has a structure similar to a "sandwich", in which the materials of the upper and bottom layers are respectively doped or undoped second metal oxides, and the material of the middle layer is a metal, examples of which are AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, TiO2 / Ag / TiO2 and TiO2 / Al / TiO2. The thickness of the bottom electrode 11 and the top electrode 12 is, for example, independently selected from 20nm to 300nm. It is understandable that one of the bottom electrode 11 and the top electrode is an anode and the other is a cathode.

[0064] In some embodiments of the present application, the optoelectronic device 10 is a light emitting device, such as Figure 2 As shown, the functional layer 13 includes a light-emitting layer 131. The material of the light-emitting layer 131 includes one or more of organic light-emitting materials and quantum dots. The thickness of the light-emitting layer 131 is, for example, 10 nm to 100 nm.

[0065] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0066] The quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots include, but are not limited to, one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2nm to 20nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, or a value between any two of the foregoing values.

[0067] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0068] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br- or I-.

[0069] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl-, Br- or I-.

[0070] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+, X is a halogen anion, including but not limited to Cl-, Br- or I - .

[0071] When the material of the light-emitting layer 131 includes quantum dots, in order to improve the solution processing performance of the quantum dots and further improve the luminous efficiency of the optoelectronic device 10, in some embodiments of the present application, the surface of the quantum dots is also connected with a ligand. The ligand can be a common ligand in the art, including but not limited to C1~C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Aliphatic thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0072] Among them, the fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. The thiol aromatic ligands include, but are not limited to, one or more of benzene mercaptan, triphenylmethyl mercaptan and p-terphenyl-4,4"-dithiol. The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine. The aromatic amine ligands include, but are not limited to, aniline, indenepropylamine, 4-octylaniline and and one or more of benzidine. Aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, aromatic phosphine ligands include but are not limited to one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, aromatic phosphate ligands include but are not limited to one or more of tetraethyl p-xylene diphosphate and diphenylethyl phosphate. Halogen ligands include but are not limited to -Cl, -F, -I or -Br.

[0073] Further, in order to improve the photoelectric performance of the photoelectric device 10, in some embodiments of the present application, the functional layer 13 further includes a first electronic functional layer 132 disposed between the cathode and the light-emitting layer 131. When the photoelectric device 10 is a positive structure, continue to refer to Figure 2 The first electronic functional layer 132 is disposed between the light emitting layer 131 and the top electrode 12; it can be understood that when the optoelectronic device 10 is an inverted structure, the first electronic functional layer 132 is disposed between the bottom electrode 11 and the light emitting layer 131. The thickness of the first electronic functional layer 132 is, for example, 10 nm to 200 nm.

[0074] The first electronic functional layer 132 may be a single-layer structure or a multi-layer structure. The first electronic functional layer 132 may include, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the first electronic functional layer 132 including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode than the hole blocking layer, and the hole blocking layer is closer to the light-emitting layer 131 than the electron injection layer. As an example, continue to refer to Figure 2 , the first electronic functional layer 132 is a single-layer structure, and the first electronic functional layer 132 is an electron transport layer.

[0075] The material of the first electronic functional layer 132 includes a doped or undoped first inorganic compound. The undoped first inorganic compound is selected from one or more of a second metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material, and an IB-IIIA-VIA semiconductor material, the second metal oxide includes but is not limited to one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2, and / or the IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe, and CdS, and / or the IIIA-VA semiconductor material is selected from one or more of InP and GaP, and / or the IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS. The doping element in the doped first inorganic compound is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin. The doped inorganic compound is, for example, selected from one or more of zinc oxide magnesium, zinc oxide calcium, zinc oxide zirconium, zinc oxide gallium, zinc oxide aluminum, zinc oxide lithium, zinc oxide titanium, yttrium zinc oxide, indium tin oxide and titanium lithium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Wx O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x O, wherein 0<x≤0.5. It is understood that when the material of the first electronic functional layer 132 includes multiple materials and the first electronic functional layer 132 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers, or partially in the same layer.

[0076] Further, in order to improve the photoelectric performance of the photoelectric device 10, in some embodiments of the present application, the functional layer 13 further includes a first hole functional layer 133 disposed between the anode and the light-emitting layer 131. When the photoelectric device 10 is a positive structure, continue to refer to Figure 2 The first hole functional layer 133 is disposed between the light emitting layer 131 and the bottom electrode 11; it can be understood that when the optoelectronic device 10 is an inverted structure, the first hole functional layer 133 is disposed between the light emitting layer 131 and the top electrode 12. The thickness of the first hole functional layer 133 is, for example, 10 nm to 200 nm.

[0077] The first hole functional layer 133 may be a single-layer structure or a multi-layer structure. The first hole functional layer 133 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the first hole functional layer 133 including the hole injection layer, the hole transport layer, and the electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode than the electron blocking layer, and the electron blocking layer is closer to the light-emitting layer 131 than the hole injection layer. As an example, continue to refer to Figure 2 The first hole functional layer 133 is composed of a hole injection layer 1331 and a hole transport layer 1332 which are stacked together. The hole injection layer 1331 is closer to the anode than the hole transport layer 1332 .

[0078] The material of the first hole functional layer 133 includes a doped or undoped second inorganic compound, poly (3,4-ethylenedioxythiophene): poly (styrene sulfonic acid) (abbreviated as PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30- 1), polypyrrole (CAS No. 30604-81-0), 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly (9-vinyl carbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis (9-carbazole) biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N, N-bis (4-methylphenyl) aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (4,4'- (N- (4-sec-butylphenyl) diphenylamine)] (abbreviated as TFB, CA S No. 220797-16-0), poly [(N, N'-(4-n-butylphenyl)-N, N'-diphenyl-1, 4-phenylenediamine) -ALT- (9, 9-di-n-octylfluorenyl-2, 7-diyl)] (CAS No. 223569-31-1), 4, 4', 4'-tri (N-3-methylphenyl-N-phenylamino) triphenylamine (CAS No. 124729-98-2), 4, 4', 4"-tri (carbazol-9-yl) triphenylamine (abbreviated as TCTA, CAS No. 139092-78-7), 4, 4', 4'-tri (2-naphthylphenylamino) triphenylamine (CAS No. 185690-41-9), N, N'-diphenyl-N, N'- (1-naphthylphenylamino) triphenylamine )-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviated as Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,One or more of 9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9) and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-omeTAD, CAS No. 207739-72-8).

[0079] It is understood that when the material of the first hole functional layer 133 includes multiple materials and the first hole functional layer 133 is a multi-layer structure, the multiple materials may all be in the same layer, or in different layers, or partially in the same layer. For example, when the first hole functional layer 133 is composed of a stacked hole injection layer and a hole transport layer, the material of the first hole functional layer 133 includes PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers, the material of the hole injection layer is PEDOT:PSS, and the material of the hole transport layer is PVK.

[0080] As an alternative embodiment, the optoelectronic device 10 is a solar cell, such as Figure 3 As shown, the functional layer 13 includes a light absorbing layer 134. The material of the light absorbing layer 134 includes perovskite quantum dots. The general structural formula of the perovskite quantum dots is DMX3. Wherein D is selected from methylamine ions, FA ions, Cs + and K + One or more of; M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2 + 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of; X is a halogen anion, including but not limited to Cl - Br - or I - The thickness of the light absorbing layer 134 is, for example, 10 nm to 100 nm.

[0081] In order to further improve the photoelectric performance of the photoelectric device 10, in some embodiments of the present application, the photoelectric device 10 further includes a second electronic functional layer 135 disposed between the cathode and the light absorbing layer 134. The thickness of the second electronic functional layer 135 is, for example, 10 nm to 200 nm. Figure 3 , the second electronic functional layer 135 is arranged between the bottom electrode 11 and the light absorbing layer 134 ; it can be understood that when the optoelectronic device 10 is an inverted structure, the second electronic functional layer 135 is arranged between the top electrode 12 and the light absorbing layer 134 .

[0082] The second electronic functional layer 135 may be a single-layer structure or a multi-layer structure. The material of the second electronic functional layer 135 includes but is not limited to one or more of TiO2, SnO2, ZnO, PCBM (C70) and C60. It is understood that when the material of the second electronic functional layer 135 includes multiple materials and the second electronic functional layer 135 is a multi-layer structure, the multiple materials may all be in the same layer, or in different layers, or partially in the same layer.

[0083] In order to further improve the photoelectric performance of the photoelectric device 10, in some embodiments of the present application, the photoelectric device 10 further includes a second hole functional layer 136 disposed between the anode and the light absorbing layer 134. The thickness of the second hole functional layer 136 is, for example, 10 nm to 200 nm. Figure 3 , the second hole functional layer 136 is arranged between the top electrode 12 and the light absorbing layer 134 ; it can be understood that when the optoelectronic device 10 is an inverted structure, the second hole functional layer 136 is arranged between the bottom electrode 11 and the light absorbing layer 134 .

[0084] The second hole function layer 136 may be a single layer structure or a multi-layer structure. The material of the second hole function layer 136 includes but is not limited to NiO x 、MoO x , CuCrO2, CuCaO2, CuAlO2, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (CAS No. 207739-72-8) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) or more thereof. It is understood that when the material of the second hole functional layer 136 includes a plurality of materials and the second hole functional layer 136 is a multilayer structure, the plurality of materials may all be in the same layer, or in different layers, or partially in the same layer.

[0085] The present invention also provides a method for preparing a photoelectric device, comprising the following steps:

[0086] S1. providing a bottom electrode and forming a functional layer on one side of the bottom electrode;

[0087] S2, forming a top electrode on a side of the functional layer away from the bottom electrode;

[0088] S3. Depositing a dispersion containing a heavy metal adsorption material on a side of the top electrode away from the functional layer, and then drying the deposited dispersion to obtain an auxiliary layer.

[0089] Wherein, one of the bottom electrode and the top electrode is an anode, and the other is a cathode. When the optoelectronic device is a light-emitting device, the functional layer, for example, includes a first hole functional layer, a light-emitting layer, and a first electron functional layer stacked in sequence, the first hole functional layer is closer to the anode than the first electron functional layer, and the structures and compositions of the first hole functional layer, the light-emitting layer, and the first electron functional layer can all refer to the above description. When the optoelectronic device is a solar cell, the functional layer, for example, includes a second hole functional layer, a light-absorbing layer, and a second electron functional layer stacked in sequence, the second hole functional layer is closer to the anode than the second electron functional layer, and the structures and compositions of the second hole functional layer, the light-absorbing layer, and the second electron functional layer can all refer to the above description.

[0090] In step S3, the dispersant of the dispersion or the solvent of the solution is selected from one or more of water, alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds, wherein alkanes include but are not limited to one or more of nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include but are not limited to one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include but are not limited to ethylene glycol monomethyl ether, furan compounds include but are not limited to tetrahydrofuran, pyridine compounds include but are not limited to pyridine, and amide compounds include but are not limited to N,N-dimethylformamide. It is understandable that, in addition to the heavy metal adsorption material, the dispersion or solution may also contain other substances, including but not limited to substances that promote the dispersion or dissolution of the heavy metal adsorption material. For example, when the heavy metal adsorption material contains chitosan, the dispersion or solution may also contain hydrochloric acid or acetic acid.

[0091] In order to improve the density of the auxiliary layer and the dispersion performance of the heavy metal adsorption material in the dispersion, in some embodiments of the present application, the concentration of the heavy metal adsorption material in the dispersion is 5 mg / mL to 30 mg / mL, for example, it can be 5 mg / mL, 10 mg / mL, 13 mg / mL, 15 mg / mL, 18 mg / mL, 20 mg / mL, 25 mg / mL, 30 mg / mL or a value between any two of the foregoing values.

[0092] In step S3, the dispersion liquid is deposited by one or more methods including but not limited to spin coating, printing, doctor blading, dip pulling, immersion, spraying, rolling, casting, slit coating and strip coating.

[0093] In step S3, "drying treatment" includes all processes that can enable the deposited dispersion to obtain higher energy and transform into a solidified film, including but not limited to one or more of natural air drying treatment, heat treatment, vacuum drying treatment, laser annealing treatment, electron beam annealing treatment, atomic annealing treatment and microwave irradiation annealing treatment.

[0094] It should be noted that, in addition to the auxiliary layer, the preparation methods of other film layers in the optoelectronic device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and co-precipitation. Physical methods include but are not limited to physical plating and solution methods. Physical plating methods include but are not limited to thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. One or more of solution methods include but are not limited to spin coating, printing, blade coating, dip-coating, immersion, spraying, roll coating, casting, slit coating and strip coating.

[0095] The present application also provides an electronic device, the electronic device comprising any of the optoelectronic devices described above, or an optoelectronic device prepared by any of the preparation methods described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical machine, a camera, a game console, a digital camera, a car navigation system, an electronic billboard, an ATM, a smart bracelet, a smart watch, a virtual reality (VR) device or a wearable device.

[0096] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0097] Light emitting device embodiment 1

[0098] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device is a quantum dot light emitting diode of an upright structure, such as Figure 2 As shown, in the direction from bottom to top, the optoelectronic device 10 includes a bottom electrode 11, a functional layer 13, a top electrode 12 and an auxiliary layer 14 stacked in sequence, the bottom electrode 11 is an anode and the top electrode 12 is a cathode, the functional layer 13 includes a first hole functional layer 133, a light emitting layer 131 and a first electron functional layer 132 stacked in sequence, the first hole functional layer 133 is composed of a hole injection layer 1331 and a hole transport layer 1332 stacked in sequence, and the hole injection layer 1331 is closer to the bottom electrode 11 than the hole transport layer 1332. The light emitting area of ​​the optoelectronic device is 2mm×2mm.

[0099] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0100] The material of the bottom electrode 11 is ITO, and the thickness of the bottom electrode 11 is 100 nm;

[0101] The material of the top electrode 12 is Ag, and the thickness of the top electrode 12 is 100 nm;

[0102] The material of the light-emitting layer 131 is CdSe quantum dots, the light-emitting color is blue, and the thickness of the light-emitting layer 131 is 20 nm;

[0103] The material of the hole injection layer 1331 is PEDOT:PSS, and the thickness of the hole injection layer 1331 is 30 nm;

[0104] The material of the hole transport layer 1332 is PVK, and the thickness of the hole transport layer 1332 is 25 nm;

[0105] The material of the first electronic functional layer 132 is nano ZnO (average particle size is 5 nm), and the thickness of the first electronic functional layer 132 is 40 nm;

[0106] The material of the auxiliary layer 14 is composed of diatomaceous earth and graphene, the mass ratio of diatomaceous earth to graphene is 1:1, and the thickness of the auxiliary layer 14 is 50 nm.

[0107] The method for preparing the optoelectronic device in this embodiment comprises the following steps:

[0108] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, acetone for 15 minutes, ethanol for 15 minutes, and isopropanol for 15 minutes, and then dry and perform ultraviolet-ozone surface treatment for 15 minutes to obtain a substrate including a bottom electrode;

[0109] S1.2, in an air environment at room temperature and pressure, spin-coating a 2.8% PEDOT:PSS aqueous solution on the side of the bottom electrode away from the substrate, and then subjecting it to a constant temperature heat treatment at 150°C to solidify the film to obtain a hole injection layer;

[0110] S1.3, in a nitrogen environment at room temperature and pressure, spin-coat a 6.5 mg / mL PVK-chlorobenzene solution on the side of the hole injection layer away from the bottom electrode, and then heat-treat at 170°C to solidify the film to obtain a hole transport layer;

[0111] S1.4. In a nitrogen environment at room temperature and pressure, a CdSe-n-octane solution with a concentration of 20 mg / mL is spin-coated on the side of the hole transport layer away from the hole injection layer, and then subjected to a constant temperature heat treatment at 80° C. to solidify the film to obtain a light-emitting layer;

[0112] S1.5. In a nitrogen environment at room temperature and pressure, a nano ZnO-ethanol solution with a concentration of 30 mg / mL is spin-coated on the side of the light-emitting layer away from the hole transport layer, and then subjected to a constant temperature heat treatment at 80°C to solidify the film to obtain a first electronic functional layer;

[0113] S1.6, place the prefabricated device after step S1.5 in an atmosphere with a pressure of 4×10 -6 In a evaporation chamber at mbar, Ag is thermally evaporated on the side of the first electronic functional layer away from the light-emitting layer through a mask plate to obtain a top electrode;

[0114] S1.7. Take 50 mg of powdered diatomaceous earth and 50 mg of powdered graphene and disperse them in 20 mL of N,N-dimethylformamide to obtain a dispersion. In a nitrogen environment at room temperature and pressure, spin coat an appropriate amount of the dispersion on the side of the top electrode away from the first electronic functional layer, and then place it at a constant temperature heat treatment of 160°C to form an auxiliary layer to obtain a photoelectric device.

[0115] Light emitting device embodiment 2

[0116] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the "mass ratio of diatomaceous earth: graphene is 1:1" in the auxiliary layer is replaced by "1:3".

[0117] Compared with the preparation method of the optoelectronic device in the light-emitting device embodiment 1, the preparation method of the optoelectronic device in this embodiment is different only in that "50 mg of powdered graphene" in step S1.7 is replaced by "150 mg of powdered graphene".

[0118] Light emitting device embodiment 3

[0119] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the "mass ratio of diatomaceous earth: graphene is 1:1" in the auxiliary layer is replaced by "1:3".

[0120] Compared with the preparation method of the optoelectronic device in the light-emitting device embodiment 1, the preparation method of the optoelectronic device in this embodiment is different only in that "50 mg of powdered graphene" in step S1.7 is replaced by "250 mg of powdered graphene".

[0121] Light emitting device embodiment 4

[0122] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in the light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the thickness of the auxiliary layer is replaced with "200 nm".

[0123] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the light-emitting device embodiment 1.

[0124] Light emitting device embodiment 5

[0125] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is composed of lignin and graphene, and the mass ratio of lignin:graphene is 1:1.

[0126] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the light-emitting device embodiment 1.

[0127] Light emitting device embodiment 6

[0128] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is composed of chitosan and graphene, and the mass ratio of chitosan:graphene is 1:1.

[0129] Compared with the preparation method of the optoelectronic device in the light-emitting device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is only that: step S1.7 is replaced by "take 50 mg of powdered chitosan (CAS No. 9012-76-4) and 50 mg of powdered graphene and disperse them in 20 mL of dispersant to obtain a dispersion, the dispersant is composed of 1% (mass percentage) hydrochloric acid aqueous solution and N,N-dimethylformamide, the volume ratio of 1% hydrochloric acid aqueous solution: dimethylformamide is 1:1, then under a nitrogen environment at room temperature and pressure, spin coat an appropriate amount of dispersion on the side of the top electrode away from the first electronic functional layer, and then place it at 160°C for constant temperature heat treatment to form an auxiliary layer to obtain a photoelectric device".

[0130] Light emitting device embodiment 7

[0131] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is composed of zeolite (CAS number 1327-39-5) and graphene, and the mass ratio of zeolite:graphene is 1:1.

[0132] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the light-emitting device embodiment 1.

[0133] Light emitting device embodiment 8

[0134] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in the light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is composed of Lanxess TP260 chelating resin and graphene, and the mass ratio of Lanxess TP260 chelating resin:graphene is 1:1.

[0135] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the light-emitting device embodiment 1.

[0136] Light emitting device embodiment 9

[0137] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is composed of carbon nanotubes and graphene, and the mass ratio of carbon nanotubes:graphene is 1:1.

[0138] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the light-emitting device embodiment 1.

[0139] Light emitting device embodiment 10

[0140] This embodiment provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in the light-emitting device embodiment 1, the difference of the photoelectric device in this embodiment is only that the material of the auxiliary layer is composed of diatomaceous earth and mesoporous TiO2 (the preparation method refers to embodiment 1 of Chinese patent application CN103979605B), and the mass ratio of diatomaceous earth: mesoporous TiO2 is 1:1.

[0141] The preparation method of the optoelectronic device in this embodiment is carried out with reference to the light-emitting device embodiment 1.

[0142] Light emitting device embodiment 11

[0143] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in the light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is graphene.

[0144] Compared with the preparation method of the optoelectronic device in the light-emitting device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is only that: step S1.7 is replaced by "take 100 mg of powdered graphene and disperse it in 20 mL of dimethylformamide to obtain a dispersion liquid, under a nitrogen environment at room temperature and pressure, spin coat an appropriate amount of the dispersion liquid on the side of the top electrode away from the first electronic functional layer, and then place it at 160°C for constant temperature heat treatment to form an auxiliary layer to obtain a photoelectric device".

[0145] Light emitting device embodiment 12

[0146] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in the light emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is diatomaceous earth.

[0147] Compared with the preparation method of the optoelectronic device in the light-emitting device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is only that: step S1.7 is replaced by "take 100 mg of powdered diatomaceous earth and disperse it in 20 mL of dimethylformamide to obtain a dispersion liquid, under a nitrogen environment at room temperature and pressure, spin coat an appropriate amount of the dispersion liquid on the side of the top electrode away from the first electronic functional layer, and then place it at 160°C for constant temperature heat treatment to form an auxiliary layer to obtain a photoelectric device".

[0148] Light emitting device embodiment 13

[0149] This embodiment provides a photoelectric device and a method for preparing the same. Compared with the photoelectric device in light-emitting device embodiment 1, the photoelectric device in this embodiment is different only in that the material of the auxiliary layer is mesoporous TiO2 (the preparation method refers to embodiment 1 of Chinese patent application CN103979605B).

[0150] Compared with the preparation method of the optoelectronic device in the light-emitting device embodiment 1, the difference of the preparation method of the optoelectronic device in this embodiment is only that: step S1.7 is replaced by "take 100 mg of mesoporous TiO2 and disperse it in 20 mL of dimethylformamide to obtain a dispersion, and in a nitrogen environment at room temperature and pressure, spin coat an appropriate amount of the dispersion on the side of the top electrode away from the first electronic functional layer, and then place it at 160°C for constant temperature heat treatment to form an auxiliary layer to obtain a photoelectric device."

[0151] Light Emitting Device Comparison

[0152] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in the light-emitting device embodiment 1, the photoelectric device in this comparative example is different only in that the auxiliary layer is omitted.

[0153] Compared with the method for preparing the optoelectronic device in the light-emitting device embodiment 1, the method for preparing the optoelectronic device in this embodiment is different only in that step S1.7 is omitted.

[0154] Solar cell embodiment

[0155] This embodiment provides a photoelectric device and a method for preparing the same. The photoelectric device is a perovskite solar cell with an upright structure, such as Figure 3 As shown, in the direction from bottom to top, the photoelectric device 10 includes a bottom electrode 11, a functional layer 13, a top electrode 12 and an auxiliary layer 14 which are stacked in sequence, the bottom electrode 11 is a cathode and the top electrode 12 is an anode, the functional layer 13 includes a second electronic functional layer 135, a light absorption layer 134 and a second hole functional layer 136 which are stacked in sequence, and the second electronic functional layer 135 is closer to the bottom electrode 11 than the second hole functional layer 136.

[0156] The materials and thicknesses of the various layers in the optoelectronic device 10 are as follows:

[0157] The material of the bottom electrode 11 is FTO, and the thickness of the bottom electrode 11 is 100 nm;

[0158] The material of the top electrode 12 is Ag, and the thickness of the top electrode 12 is 100 nm;

[0159] The material of the second electronic functional layer 135 is TiO2, and the thickness of the second electronic functional layer 135 is 50 nm;

[0160] The material of the light absorbing layer 134 is CH3NH3PbI3, and the thickness of the light absorbing layer 134 is 30nm;

[0161] The material of the second hole functional layer 136 is 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiro-oMeTAD), and the thickness of the second hole functional layer 136 is 50 nm;

[0162] The material of the auxiliary layer 14 is composed of diatomaceous earth and graphene, the mass ratio of diatomaceous earth to graphene is 1:1, and the thickness of the auxiliary layer 14 is 50 nm.

[0163] The method for preparing the optoelectronic device in this embodiment comprises the following steps:

[0164] S10.1, providing a substrate, sputtering FTO on one side of the substrate to obtain an FTO layer, and then sequentially performing cleaning, drying and UV-ozone surface treatment steps to obtain a substrate including a bottom electrode;

[0165] S10.2, in a nitrogen environment at room temperature and pressure, depositing a diisopropyl titanate-isopropyl alcohol solution on the side of the bottom electrode away from the substrate, and then subjecting the solution to a constant temperature treatment at 500° C. for 30 min to obtain a second electronic functional layer;

[0166] S10.3. In a nitrogen environment at room temperature and pressure, a lead iodide-N,N-dimethylformamide solution is deposited on the side of the second electronic functional layer away from the bottom electrode, and then the film layer is subjected to a constant temperature treatment at 100°C for 15 minutes to obtain a film layer. After cooling to room temperature, the film layer is immersed in a methylammonium iodide-isopropanol solution for 60 minutes, and then the film layer is rinsed with dry isopropanol and nitrogen, and then dried at 100°C for 30 minutes to obtain a light absorption layer.

[0167] S10.4, in a nitrogen environment at room temperature and pressure, depositing a spiro-oMeTAD-chlorobenzene solution on a side of the light absorbing layer away from the second electronic functional layer, and then subjecting the solution to a constant temperature treatment at 150° C. to curing to form a film, thereby obtaining a second hole functional layer;

[0168] S10.5, place the prefabricated device after step S10.4 in an atmosphere with a pressure of 4×10 -6 In a evaporation chamber of mbar, Ag is thermally evaporated through a mask plate on the side of the second hole functional layer away from the light absorption layer to obtain a top electrode;

[0169] S10.6. Take 50 mg of powdered diatomaceous earth and 50 mg of powdered graphene and disperse them in 20 mL of dimethylformamide to obtain a dispersion. In a nitrogen environment at room temperature and pressure, spin coat an appropriate amount of the dispersion on the side of the top electrode away from the second hole functional layer, and then place it at a constant temperature heat treatment of 160°C to form an auxiliary layer to obtain a photoelectric device.

[0170] Solar cell comparison

[0171] This comparative example provides a photoelectric device and a preparation method thereof. Compared with the photoelectric device in the solar cell embodiment, the photoelectric device in this comparative example is different only in that the auxiliary layer is omitted.

[0172] Compared with the optoelectronic device in the solar cell embodiment, the only difference in the method for preparing the optoelectronic device in this comparative example is that step S10.6 is omitted.

[0173] Experimental Example 1

[0174] The heavy metal leakage of the photoelectric devices in the light-emitting device embodiments 1 to 13 and the light-emitting device comparison examples was detected respectively. Each photoelectric device (unpackaged) was immersed in a container filled with 25°C deionized water (heavy metal content was 0 mg / mL), and the container was placed in an oscillator at a speed of 220 r / min for 24 hours. The heavy metal content in the water was detected using an ICP tester. During the detection process, three parallel samples were set for each photoelectric device, and the test results were taken as the average of the three parallel samples. The heavy metal leakage of each photoelectric device is shown in Table 1 below:

[0175] Table 1 List of heavy metal leakage of optoelectronic devices in light emitting device examples 1 to 13 and light emitting device comparative examples

[0176]

[0177]

[0178] It can be seen from Table 1 that compared with the optoelectronic devices in the light-emitting device comparison example, the optoelectronic devices in light-emitting device embodiments 1 to 14 have a lower risk of heavy metal leakage. The reason is that the optoelectronic devices in light-emitting device embodiments 1 to 14 include an auxiliary layer, which is arranged on the side of the top electrode away from the functional layer, and the material of the auxiliary layer includes a heavy metal adsorption material, so that the auxiliary layer has a heavy metal adsorption function, thereby effectively reducing the risk of heavy metal leakage without affecting the performance of the functional layer in the optoelectronic device.

[0179] Experimental Example 2

[0180] Epoxy resin was used to encapsulate the light-emitting device embodiments 1 to 13 and the photoelectric devices in the light-emitting device comparative example, and then the performance of each encapsulated photoelectric device was tested. IVL optical property measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems) was used to detect and obtain the parameters such as the start-up voltage, current, brightness, and luminescence spectrum of each photoelectric device, and then the maximum external quantum efficiency (EQE max , %), power efficiency and other key parameters, and use life test equipment to test the device life of each of the above-mentioned optoelectronic devices. During the performance test process, three parallel samples are set for each optoelectronic device, and the test average value of the three parallel samples is taken for each performance test parameter.

[0181] The device life test method includes the following steps: under the drive of a constant current (2 mA), a 128-channel QLED life test system is used to perform electroluminescent life analysis on each optoelectronic device, and the time required for each optoelectronic device to decay from the maximum brightness to 95% (T95, h) is recorded.

[0182] The performance test results of various optoelectronic devices under 25°C environment are shown in Table 2 below:

[0183] Table 2 Summary of performance test data of optoelectronic devices in light emitting device examples 1 to 13 and light emitting device comparative examples

[0184]

[0185]

[0186] It can be seen from Table 1 and Table 2 that compared with the optoelectronic devices in the light-emitting device comparison example, the optoelectronic devices in light-emitting device embodiments 1 to light-emitting device embodiments 13 have better comprehensive performance, specifically: the risk of heavy metal leakage of the optoelectronic devices in light-emitting device embodiments 1 to light-emitting device embodiments 13 is lower, and the optoelectronic performance and device life of the optoelectronic devices in light-emitting device embodiments 1 to light-emitting device embodiments 13 are at least equivalent to those of the optoelectronic devices in the light-emitting device comparison example.

[0187] It can be seen from this that by adding an auxiliary layer on the side of the top electrode away from the functional layer, and the material of the auxiliary layer contains heavy metal adsorption material, so that the auxiliary layer has a heavy metal adsorption function, the risk of heavy metal leakage is effectively reduced without affecting the performance of the functional layer in the optoelectronic device, and there is almost no negative impact on the photoelectric performance and device life of the optoelectronic device. Even by controlling the composition of the heavy metal adsorption material, the photoelectric performance and device life of the optoelectronic device can be further improved.

[0188] Experimental Example 3

[0189] The heavy metal leakage of the optoelectronic devices in the solar cell embodiment and the solar cell comparative example was detected respectively, and the detection method was referred to Experimental Example 1. The heavy metal leakage of the optoelectronic devices in the solar cell embodiment and the solar cell comparative example is shown in Table 3 below:

[0190] Table 3 Heavy metal leakage of optoelectronic devices in solar cell examples and solar cell comparative examples

[0191]

[0192] It can be seen from Table 3 that compared with the optoelectronic device in the solar cell comparison example, the optoelectronic device in the solar cell embodiment has a lower risk of heavy metal leakage. The reason is that the optoelectronic device in the solar cell embodiment includes an auxiliary layer, and the auxiliary layer is arranged on the side of the top electrode away from the functional layer. The material of the auxiliary layer includes a heavy metal adsorption material, so that the auxiliary layer has a heavy metal adsorption function, thereby effectively reducing the risk of heavy metal leakage without affecting the performance of the functional layer in the optoelectronic device.

[0193] The above is a detailed introduction to a photoelectric device, a method for preparing a photoelectric device, and an electronic device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A photoelectric device, characterized in that: include: A bottom electrode and a top electrode are arranged opposite to each other; A functional layer is disposed between the bottom electrode and the top electrode; as well as An auxiliary layer, disposed on a side of the top electrode away from the functional layer; Wherein, the material of the auxiliary layer includes heavy metal adsorption material.

2. The optoelectronic device according to claim 1, characterized in that: The heavy metal adsorption material comprises one or more of mineral soil adsorbent, lignin, chitosan, xanthate, chelating resin, carbon material, silica gel and mesoporous metal oxide.

3. The optoelectronic device according to claim 2, characterized in that: The heavy metal adsorption material comprises a first material and a second material, wherein the first material is selected from one or more of mineral soil adsorbent, lignin, chitosan, xanthate, chelating resin and silica gel, and the second material is selected from one or more of carbon material and mesoporous metal oxide.

4. The optoelectronic device according to claim 3, characterized in that: The natural mineral soil adsorbent is selected from one or more of diatomaceous earth, zeolite and kaolin; and / or The xanthate is selected from one or more of methyl methacrylate, ethyl methyl acrylate and isopropyl methyl acrylate; and / or The carbon material is selected from one or more of graphene, activated carbon and carbon nanotubes; and / or The mesoporous metal oxide is selected from one or more of mesoporous TiO2, mesoporous ZnO, mesoporous SnO2 and mesoporous Al2O3, and / or the specific surface area of ​​the mesoporous metal oxide is 100 m 2 / g~1000m 2 / g, and / or the average particle size of the mesoporous metal oxide is 2nm to 20nm; and / or The heavy metal adsorption material consists of a first material and a second material.

5. The optoelectronic device according to claim 3 or 4, characterized in that: The mass ratio of the first material to the second material is 1:(1-5).

6. The optoelectronic device according to claim 1, characterized in that: The thickness of the auxiliary layer is 50nm to 500nm; and / or The materials of the bottom electrode and the bottom electrode are independently selected from one or more of metals, carbon materials and first metal oxides; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the first metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3.

7. The optoelectronic device according to claim 1, characterized in that: The optoelectronic device is a light-emitting device, the functional layer comprises a light-emitting layer, and the material of the light-emitting layer comprises one or more of an organic light-emitting material and a quantum dot; The organic light-emitting material is selected from one or more of 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2 + , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation.

8. The optoelectronic device according to claim 7, characterized in that: One of the bottom electrode and the top electrode is an anode, and the other is a cathode; The functional layer also includes a first electronic functional layer arranged between the cathode and the light-emitting layer, and the material of the first electronic functional layer includes a doped or undoped first inorganic compound, wherein the undoped first inorganic compound is selected from one or more of a second metal oxide, a IIB-VIA semiconductor material, a IIIA-VA semiconductor material and an IB-IIIA-VIA semiconductor material, the second metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2, and / or the IIB-VIA semiconductor material is selected from one or more of ZnS, ZnSe and CdS, and / or the IIIA-VA semiconductor material is selected from one or more of InP and GaP, and / or the IB-IIIA-VIA semiconductor material is selected from one or more of CuInS and CuGaS; and / or the doping element in the doped first inorganic compound is selected from one or more of magnesium, calcium, zirconium, tungsten, gallium, lithium, aluminum, titanium, yttrium, indium and tin; and / or The photoelectric device also includes a first hole functional layer disposed between the anode and the light-emitting layer, wherein the material of the first hole functional layer includes a doped or undoped second inorganic compound, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-di(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)phenylamine]], triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[ 4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, One or more of 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polyaniline and polypyrrole, wherein the undoped second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and the doping element in the doped second inorganic compound is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

9. The optoelectronic device according to claim 1, characterized in that: The photoelectric device is a solar cell, the functional layer includes a light absorption layer, the material of the light absorption layer includes perovskite quantum dots, the general structural formula of the perovskite quantum dots is DMX3, wherein D is selected from methylamine ions, FA ions, Cs + and K + One or more of, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; One of the bottom electrode and the top electrode is an anode, and the other is a cathode; the photoelectric device further comprises a second electronic functional layer disposed between the cathode and the light absorbing layer, wherein the material of the second electronic functional layer comprises one or more of TiO2, SnO2, ZnO, PCBM and C60; The photoelectric device further comprises a second hole function layer disposed between the cathode and the light absorption layer, wherein the material of the second hole function layer comprises NiO x 、MoO x , CuCrO2, CuCaO2, CuAlO2, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) or more thereof.

10. A method for preparing a photoelectric device, characterized in that: The steps include: Providing a bottom electrode, and forming a functional layer on one side of the bottom electrode; forming a top electrode on a side of the functional layer away from the bottom electrode; and A dispersion containing a heavy metal adsorption material is deposited on a side of the top electrode away from the functional layer, and then the deposited dispersion is dried to obtain an auxiliary layer.

11. The preparation method according to claim 10, characterized in that: The concentration of the heavy metal adsorbent in the dispersion is 10 mg / mL to 50 mg / mL; and / or The dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds; optionally, the alkane is selected from one or more of nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, and / or the aromatic hydrocarbon is selected from one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and One or more of 1-methylnaphthalene or indene, and / or the halogenated alkane is selected from one or more of dichloromethane, chloroform and carbon tetrachloride, and / or the alcohol compound is selected from one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, and / or the ether compound is selected from ethylene glycol monomethyl ether, and / or the furan compound is selected from tetrahydrofuran, and / or the pyridine compound is selected from pyridine, and / or the amide compound is selected from N,N-dimethylformamide; and / or The heavy metal adsorption material comprises one or more of mineral soil adsorbent, lignin, chitosan, xanthate, chelating resin, carbon material, silica gel and mesoporous metal oxide.

12. An electronic device, characterized in that: The invention comprises a photoelectric device as claimed in any one of claims 1 to 9, or a photoelectric device prepared by the preparation method as claimed in claim 10 or 11.

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