Device and method for detecting broken silicon wafer

Abstract

The invention discloses a broken silicon wafer detection device and method. The fragment detection device comprises a detection module and a fragment judgment module; the detection module comprises a first sensor group, a second sensor group, a third sensor group and a fourth sensor group; the first sensor group is used for sensing a first side and a second side of a silicon wafer in sequence, the second sensor group is used for sensing the first side and the second side in sequence, and the third sensor group is used for sensing a third side; the fourth sensor group is used for sensing a fourth side; the fragment judgment module is in communication connection with the first sensor group, the second sensor group, the third sensor group and the fourth sensor group, and is used for determining whether the first edge and the second edge of the silicon wafer are damaged or not according to the received first sensing signal and the second sensing signal; and determining whether the third edge and the fourth edge of the silicon wafer are damaged or not according to the received third sensing signal and the fourth sensing signal. The fragment detection device provided by the invention is simple in structure, low in cost and easy to maintain.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer detection, and in particular to a device and method for detecting broken silicon wafers. Background Art

[0002] The current wet process chain equipment in photovoltaic plants will produce a certain amount of broken wafers during the production of silicon wafers, that is, silicon wafers with broken corners. Broken silicon wafers are scrapped. If they are not discovered and handled in time, they may cause blockage in the downstream equipment or even abnormal damage to the equipment. Therefore, in order to avoid the above situation, the produced silicon wafers are usually tested for broken wafers before entering the next process equipment, so as to detect and handle the broken silicon wafers in time.

[0003] The commonly used fragment detection device now is a CCD industrial camera, which can be used to detect fragments. However, the above-mentioned fragment detection device has the problems of high cost and cumbersome maintenance. Summary of the invention

[0004] The present invention provides a silicon wafer chip detection device and method to solve the problems of high cost and complicated maintenance of the existing chip detection device.

[0005] In a first aspect, an embodiment of the present invention provides a device for detecting broken silicon wafers, wherein the silicon wafer comprises a first side and a second side arranged opposite to each other along a first direction and a third side and a fourth side arranged opposite to each other along a second direction; the first direction and the second direction intersect; the silicon wafer moves along the first direction with a silicon wafer transfer platform;

[0006] The fragment detection device includes a detection module and a fragment judgment module;

[0007] The detection module includes a first sensor group, a second sensor group, a third sensor group and a fourth sensor group; the first sensor group is used to sequentially sense the first edge and the second edge, the second sensor group is used to sequentially sense the first edge and the second edge, and the sum of the sensing ranges of the first sensor group and the second sensor group in the second direction is greater than or equal to the length of the first edge; the third sensor group is used to sense the third edge; and the fourth sensor group is used to sense the fourth edge;

[0008] The broken fragment judgment module is communicatively connected to the first sensor group, the second sensor group, the third sensor group and the fourth sensor group respectively, and is used to receive a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group and a fourth sensing signal output by the fourth sensor group, and determines whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal, and determines whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal.

[0009] Optionally, a sensing range of the first sensor group in the second direction is greater than or equal to half the length of the first side;

[0010] A sensing range of the second sensor group in the second direction is greater than or equal to half of the length of the second side.

[0011] Optionally, the first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals;

[0012] The second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals;

[0013] The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal;

[0014] The fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal.

[0015] Optionally, the third sensor and the fourth sensor correspond one to one;

[0016] Along the second direction, the third sensor and the fourth sensor overlap.

[0017] Optionally, the first sensor includes a photoelectric sensor;

[0018] The second sensor comprises a photoelectric sensor;

[0019] The third sensor comprises a photoelectric sensor;

[0020] The fourth sensor includes a photosensor.

[0021] In a second aspect, an embodiment of the present invention provides a method for detecting silicon wafer fragments, which is applied to the fragment detection device described in the first aspect. The fragment detection method includes:

[0022] receiving a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group;

[0023] determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal;

[0024] Whether the third side and the fourth side of the silicon wafer are damaged is determined according to the third sensing signal and the fourth sensing signal.

[0025] Optionally, the first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals; the second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals;

[0026] Determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal includes:

[0027] During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the first time, part of the first sub-sensing signals remain unchanged for a time exceeding a first preset time, or when part of the second sub-sensing signals changes for the first time, part of the second sub-sensing signals remain unchanged for a time exceeding a second preset time, it is determined that the first edge is damaged;

[0028] During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the second time, part of the first sub-sensing signals remain unchanged for a time exceeding a third preset time, or when part of the second sub-sensing signals changes for the second time, part of the second sub-sensing signals remain unchanged for a time exceeding a fourth preset time, then it is determined that the second side is damaged.

[0029] Optionally, determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal further includes:

[0030] In the process of the silicon wafer moving along the first direction, if, when part of the first sub-sensing signals changes for the first time, part of the first sub-sensing signals remain unchanged for more than a fifth preset time, or when part of the second sub-sensing signals changes for the first time, part of the second sub-sensing signals remain unchanged for more than a sixth preset time, it is determined that the damage length dimension of the first side in the first direction is greater than the first preset dimension, wherein the fourth preset time is greater than the first preset time, and the sixth preset time is greater than the second preset time;

[0031] During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the second time, part of the first sub-sensing signals remain unchanged for a time exceeding a seventh preset time, or when part of the second sub-sensing signals changes for the second time, part of the second sub-sensing signals remain unchanged for a time exceeding an eighth preset time, it is determined that the damaged length dimension of the second side in the first direction is greater than the second preset dimension, wherein the third preset time is greater than the seventh preset time, and the fourth preset time is greater than the eighth preset time.

[0032] Optionally, the third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal;

[0033] Determining whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal includes:

[0034] During the movement of the silicon wafer along the first direction, if the third sub-sensing signal changes more than twice or less than twice, it is determined that the third side is damaged;

[0035] During the movement of the silicon wafer along the first direction, if the fourth sub-sensing signal changes more than twice or less than twice, it is determined that the fourth side is damaged.

[0036] Optionally, the third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal; the third sensor and the fourth sensor correspond to each other one by one; along the second direction, the third sensor and the fourth sensor overlap;

[0037] Determining whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal includes:

[0038] During the process of the silicon wafer moving along the first direction, if the corresponding third sub-sensing signal is different from the corresponding fourth sub-sensing signal, it is determined that the third side or the fourth side is damaged.

[0039] The technical solution of the embodiment of the present invention provides a fragment detection device including a detection module and a fragment judgment module. The four sensor groups in the detection module can sense the four edges of the silicon wafer and transmit the sensed sensing signals to the fragment judgment module. The fragment judgment module can judge whether the four edges of the silicon wafer are damaged according to the received sensing signals to realize the fragment detection of the silicon wafer. Compared with the fragment detection device including an industrial camera used in the prior art, the fragment detection device including four sensor groups and the fragment judgment module provided by the embodiment of the present invention has a simple structure, low cost and easy maintenance.

[0040] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0042] Figure 1 A schematic diagram of the structure of a silicon wafer provided by an embodiment of the present invention;

[0043] Figure 2 A schematic diagram of the structure of a fragment detection device provided by an embodiment of the present invention;

[0044] Figure 3 A schematic structural diagram of another fragment detection device provided by an embodiment of the present invention;

[0045] Figure 4 A flowchart of a fragment detection method provided by an embodiment of the present invention;

[0046] Figure 5 A flowchart of another fragment detection method provided by an embodiment of the present invention;

[0047] Figure 6 A flowchart of another fragment detection method provided by an embodiment of the present invention;

[0048] Figure 7 A flowchart of another fragment detection method provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0049] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0050] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices. The orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is only used to illustrate the relative positional relationship between the components or components, and does not particularly limit the specific installation orientation of the components or components.

[0051] Figure 1 A schematic diagram of the structure of a silicon wafer provided in an embodiment of the present invention, referring to Figure 1 The silicon wafer in the embodiment of the present invention includes a first side 10 and a second side 20 arranged oppositely along a first direction X, and a third side 30 and a fourth side 40 arranged oppositely along a second direction Y. It should be noted that the first direction X and the second direction Y intersect, and the silicon wafer can move along the first direction X with the silicon wafer transfer platform.

[0052] Figure 1 The silicon wafer shown is a rectangular silicon wafer, the length of the first side 10 and the length of the second side 20 of which are the same, and the length of the third side 30 and the length of the fourth side 40 are the same.

[0053] Figure 2 A schematic diagram of a fragment detection device provided by an embodiment of the present invention, referring to Figure 2The fragment detection device in the embodiment of the present invention includes a detection module 50 and a fragment judgment module 60. The detection module 50 includes a first sensor group 51, a second sensor group 52, a third sensor group 53 and a fourth sensor group 54. The first sensor group 51 is used to sequentially sense the first side 10 and the second side 20, and the second sensor group 52 is used to sequentially sense the first side 10 and the second side 20, and the sum of the sensing ranges of the first sensor group 51 and the second sensor group 52 in the second direction Y is greater than or equal to the side length of the first side 10. The third sensor group 53 is used to sense the third side 30. The fourth sensor group 54 is used to sense the fourth side 40.

[0054] The broken fragment judgment module 60 is respectively connected to the first sensor group 51, the second sensor group 52, the third sensor group 53 and the fourth sensor group 54 for communication, and is used to receive the first sensing signal output by the first sensor group 51, the second sensing signal output by the second sensor group 52, the third sensing signal output by the third sensor group 53 and the fourth sensing signal output by the fourth sensor group 54, and determine whether the first side 10 and the second side 20 of the silicon wafer are damaged according to the first sensing signal and the second sensing signal, and determine whether the third side 30 and the fourth side 40 of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal.

[0055] Exemplarily, the detection module 50 can be set on one side of the silicon wafer transfer platform, for example, above the silicon wafer transfer platform. When the silicon wafer moves along the first direction X with the silicon wafer transfer platform, the silicon wafer will pass under the detection module 50, and each sensor group in the detection module 50 will sense each edge of the silicon wafer. Specifically, the first sensor group 51 and the second sensor group 52 can sense the first edge 10 and the second edge 20 of the silicon wafer in turn, the third sensor group 53 can sense the third edge 30 of the silicon wafer, and the fourth sensor group 53 can sense the fourth edge 40 of the silicon wafer. It can be understood that the sensing signal output by the sensor group that senses the edge of the silicon wafer when it is damaged is different from the sensing signal output by the sensor group that senses the edge when the edge of the silicon wafer is not damaged. Therefore, the fragment judgment module 60 can determine whether the first edge 10 and the second edge 20 of the silicon wafer are damaged based on the first sensing signal output by the first sensor group 51 and the second sensing signal output by the second sensor group 52, and can determine whether the third edge 30 and the fourth edge 40 of the silicon wafer are damaged based on the third sensing signal output by the third sensor group 53 and the fourth sensing signal output by the fourth sensor group 54.

[0056] The embodiment of the present invention provides a fragment detection device including a detection module 50 and a fragment judgment module 60. The four sensor groups in the detection module 50 can sense the four edges of the silicon wafer and transmit the sensed sensing signals to the fragment judgment module 60. The fragment judgment module 60 can judge whether the four edges of the silicon wafer are damaged according to the received sensing signals to realize the fragment detection of the silicon wafer. Compared with the fragment detection device including an industrial camera used in the prior art to realize the fragment detection, the fragment detection device including four sensor groups and the fragment judgment module provided by the embodiment of the present invention has a simple structure, low cost and easy maintenance.

[0057] As a feasible implementation, the sensing range of the first sensor group 51 in the second direction Y is greater than or equal to half the length of the first side 10 . The sensing range of the second sensor group 52 in the second direction Y is greater than or equal to half the length of the second side 20 .

[0058] It should be noted that the sensing range of the sensor group is related to the number of sensors it includes. When other factors are the same, the more sensors there are, the larger the sensing range of the sensor group. It can be understood that it is only necessary to ensure that the sum of the sensing ranges of the first sensor group 51 and the second sensor group 52 in the second direction Y is greater than or equal to the length of the first side 10, so as to ensure that the first sensor group 51 and the second sensor group 52 can sense the entire side of the first side 10 and the entire side of the second side 20 during the movement of the silicon wafer along the silicon wafer transfer platform along the first direction X. In order to minimize the number of sensors included in the first sensor group 51 and the number of sensors included in the second sensor group 52, the sensing range of the first sensor group 51 in the second direction Y can be set to be greater than or equal to half of the length of the first side 10, and the sensing range of the second sensor group 52 in the second direction Y can be set to be greater than or equal to half of the length of the second side 20. For example, the sensing range of the first sensor group 51 in the second direction Y is at the lower half of the first side 10 and the second side 20, and the sensing range of the second sensor group 52 in the second direction Y is at the upper half of the first side 10 and the second side 20, or the sensing range of the first sensor group 51 in the second direction Y is at the upper half of the first side 10 and the second side 20, and the sensing range of the second sensor group 52 in the second direction Y is at the lower half of the first side 10 and the second side 20.

[0059] Figure 2 A schematic diagram of the structure of a fragment detection device provided by an embodiment of the present invention, Figure 3 A schematic diagram of another fragment detection device provided by an embodiment of the present invention, referring to Figure 2 and Figure 3, the first sensor group 51 includes at least two first sensors 511 arranged along the second direction Y, and the first sensing signal output by the first sensor group 51 includes at least two first sub-sensing signals. The second sensor group 52 includes at least two second sensors 521 arranged along the second direction Y, and the second sensing signal output by the second sensor group 52 includes at least two second sub-sensing signals. The third sensor group 53 includes at least one third sensor 531, and the third sensing signal output by the third sensor group 53 includes at least one third sub-sensing signal. The fourth sensor group 54 includes at least one fourth sensor 541, and the fourth sensing signal output by the fourth sensor group 54 includes at least one fourth sub-sensing signal.

[0060] Exemplarily, the first sensor 511 and the second sensor 521 are respectively connected to the fragmentation judgment module 60 for communication, and can output the first sub-sensing signal and the second sub-sensing signal to the fragmentation judgment module 60, and the fragmentation judgment module 60 can determine whether the first side 10 and the second side 20 of the silicon wafer are damaged according to the received first sub-sensing signal and the second sub-sensing signal. The third sensor 531 and the fourth sensor 541 are respectively connected to the fragmentation judgment module 60 for communication, and can output the third sub-sensing signal and the fourth sub-sensing signal to the fragmentation judgment module 60, and the fragmentation judgment module 60 can determine whether the third side 30 and the fourth side 40 of the silicon wafer are damaged according to the received third sub-sensing signal and the fourth sub-sensing signal.

[0061] It can be understood that if the first side 10 and the second side 20 of the silicon wafer are not broken, then in the process of the silicon wafer moving along the first direction X with the silicon wafer transfer table, the first sub-sensing signal output by the first sensor 511 in the first sensor group 51 should change simultaneously and twice, and the second sub-sensing signal output by the second sensor 521 in the second sensor group 52 should change simultaneously and twice.

[0062] The damaged edge of the silicon wafer is usually irregular. If the first edge 10 of the silicon wafer is broken, when the silicon wafer moves along the first direction X with the silicon wafer transfer table, when the first sub-sensing signal output by some of the first sensors 511 changes for the first time, some of the first sub-sensing signals output by the first sensors 511 do not change at the same time, or when the second sub-sensing signal output by some of the second sensors 521 changes for the first time, some of the second sub-sensing signals output by the second sensors 521 do not change at the same time.

[0063] If the second side 20 of the silicon wafer is broken, when the silicon wafer moves along the silicon wafer transfer platform along the first direction X, when the first sub-sensing signals output by some of the first sensors 511 change for the second time, some of the first sub-sensing signals output by some of the first sensors 511 do not change simultaneously, or when the second sub-sensing signals output by some of the second sensors 521 change for the second time, some of the second sub-sensing signals output by some of the second sensors 521 do not change simultaneously.

[0064] It can be understood that if the third side 30 of the silicon wafer is not broken, then in the process of the silicon wafer moving along the first direction X with the silicon wafer transfer stage, the third sub-sensing signal output by the third sensor 531 in the third sensor group 53 should change simultaneously and twice, and if the fourth side 40 is not broken, then in the process of the silicon wafer moving along the first direction X with the silicon wafer transfer stage, the fourth sub-sensing signal output by the fourth sensor 541 in the fourth sensor group 54 should change simultaneously and twice.

[0065] The damaged edge of the silicon wafer is usually irregular. If the third edge 30 of the silicon wafer is broken, when the silicon wafer moves along the first direction X with the silicon wafer transfer platform, the third sub-sensing signal output by the third sensor 531 may change more than twice (more than twice or less than twice).

[0066] If the fourth side 40 of the silicon wafer is broken, when the silicon wafer moves along the first direction X with the silicon wafer transfer platform, the fourth sub-sensing signal output by the fourth sensor 541 may change more than twice (more than twice or less than twice).

[0067] exist Figure 3 In the illustrated embodiment, the two third sensors 531 included in the third sensor group 53 are arranged along the first direction X. It should be noted that, in the embodiment of the present invention, the plurality of third sensors 531 included in the third sensor group 53 may also be arranged along the second direction Y, and the fragment determination module 60 may also determine whether the third side 30 and the fourth side 40 of the silicon wafer are broken according to the number of changes of the third sub-sensing signal of the third sensor 531 and the number of changes of the fourth sub-sensing signal output by the fourth sensor 541.

[0068] Continue to refer Figure 2 and Figure 3 , the third sensor 531 corresponds to the fourth sensor 541. Along the second direction Y, the third sensor 531 and the fourth sensor 541 overlap.

[0069] It can be understood that, when the third sensor 531 and the fourth sensor 541 correspond one to one and overlap along the second direction Y, the broken fragment judgment module 60 can determine whether the third side 30 and the fourth side 40 of the silicon wafer are damaged according to whether the received third sub-sensing signal and the fourth sub-sensing signal are the same. Specifically, if the third side 30 and the fourth side 40 of the silicon wafer are not broken, then in the process of the silicon wafer moving along the first direction X with the silicon wafer conveyor, the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521 should be the same, that is, the third sensor 531 and the fourth sensor 541 both sense the silicon wafer, or neither senses the silicon wafer. If the third side 30 or the fourth side 40 of the silicon wafer is broken, then in the process of the silicon wafer moving along the first direction X with the silicon wafer conveyor, there will be a difference between the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521, that is, only the third sensor 531 senses the silicon wafer, or only the fourth sensor 541 senses the silicon wafer.

[0070] As a feasible implementation, the first sensor includes a photoelectric sensor. The second sensor includes a photoelectric sensor. The third sensor includes a photoelectric sensor. The fourth sensor includes a photoelectric sensor.

[0071] Exemplarily, in the process of the silicon wafer moving along the silicon wafer transfer table along the first direction X, the light beam emitted by the photoelectric sensor can be irradiated onto the silicon wafer transfer table and the silicon wafer. It can be understood that if the light beam emitted by the photoelectric sensor is irradiated onto the silicon wafer transfer table, the silicon wafer transfer table will not reflect the light beam to the photoelectric sensor, or the light beam reflected back to the photoelectric sensor will be filtered by the photoelectric sensor. At this time, the sensing signal transmitted by the photoelectric sensor to the fragment judgment module 60 can be a low level; if the light beam emitted by the photoelectric sensor is irradiated onto the silicon wafer, the silicon wafer will reflect the light beam to the photoelectric sensor, and the photoelectric sensor will convert the received light beam into a sensing signal (electrical signal). At this time, the sensing signal transmitted by the photoelectric sensor to the fragment judgment module 60 can be a high level.

[0072] Optionally, the diameter C1 of the light spot formed by the light beam emitted by the photoelectric sensor at a distance of 70 mm from the photoelectric sensor satisfies 1mm≤C1≤3mm. It is understandable that the smaller the diameter C1 of the light spot formed at a distance of 70 mm from the photoelectric sensor, the higher the accuracy of the photoelectric sensor, but the higher the cost. By using a sensor in which the diameter C1 of the light spot formed by the light beam emitted at a distance of 70 mm from the photoelectric sensor satisfies 1mm≤C1≤3mm, the accuracy requirements of fragment detection can be met, and the cost can also be kept in a low range.

[0073] Based on the same inventive concept, an embodiment of the present invention provides a method for detecting silicon wafer fragments, and the method for detecting silicon wafer fragments is applied to the device for detecting silicon wafer fragments provided in the above embodiment of the present invention. Figure 4 A flowchart of a fragment detection method provided by an embodiment of the present invention, referring to Figure 4 , the fragment detection method in the embodiment of the present invention includes:

[0074] S110 , receiving a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group.

[0075] Exemplary, reference Figure 1 and Figure 2 ,refer to Figure 1 and Figure 2 In the process of the silicon wafer moving along the first direction X with the silicon wafer transfer platform, the first sensor group 51 can sequentially sense the first side 10 and the second side 20 of the silicon wafer and output a first sensing signal, the second sensor group 52 can sequentially sense the first side 10 and the second side 20 of the silicon wafer and output a second sensing signal, the third sensor group 53 can sense the third side 30 of the silicon wafer and output a third sensing signal, and the fourth sensor group 53 can sense the fourth side 40 of the silicon wafer and output a fourth sensing signal. The first sensor group 51, the second sensor group 52, the third sensor group 53 and the fourth sensor group 54 are respectively connected to the broken fragment judgment module 60 for communication, and the broken fragment judgment module 60 can receive the first sensing signal output by the first sensor group 51, the second sensing signal output by the second sensor group 52, the third sensing signal output by the third sensor group 53 and the fourth sensing signal output by the fourth sensor group 54.

[0076] S120 , determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal.

[0077] refer to Figure 1 and Figure 2 It can be understood that, when the silicon wafer moves along the first direction X with the silicon wafer transfer platform, the first sensing signal output by the first sensor group 51 is different when the first side 10 of the silicon wafer is damaged and when it is not damaged, and the second sensing signal output by the second sensor group 52 is also different. Similarly, when the second side 20 of the silicon wafer is damaged and when it is not damaged, the first sensing signal output by the first sensor group 51 is different, and the second sensing signal output by the second sensor group 52 is also different. Therefore, the broken fragment judgment module 60 can determine whether the first side 10 and the second side 20 of the silicon wafer are damaged according to the first sensing signal and the second sensing signal.

[0078] S130 , determining whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal.

[0079] refer to Figure 1 and Figure 2 It can be understood that, when the silicon wafer moves along the first direction X with the silicon wafer transfer stage, the third sensing signal output by the third sensor group 53 is different when the third side 30 of the silicon wafer is damaged and when it is not damaged. Similarly, the fourth sensing signal output by the fourth sensor group 54 is different when the fourth side 40 of the silicon wafer is damaged and when it is not damaged. Therefore, the broken piece judgment module 60 can determine whether the third side 30 and the fourth side 40 of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal.

[0080] The embodiment of the present invention can detect silicon wafer fragments by adopting the above-mentioned fragment detection method. Since the fragment detection device that implements the above-mentioned fragment detection method has the advantages of simple structure, low cost and easy maintenance compared to the fragment detection device including industrial cameras in the prior art, accordingly, the above-mentioned detection method has the advantages of being simple, practical and easy to promote.

[0081] refer to Figure 2 and Figure 3 The first sensor group 51 includes at least two first sensors 511 arranged along the second direction Y, and the first sensing signal output by the first sensor group 51 includes at least two first sub-sensing signals. The second sensor group 52 includes at least two second sensors 521 arranged along the second direction Y, and the second sensing signal output by the second sensor group 52 includes at least two second sub-sensing signals. Figure 5 A flowchart of another fragment detection method provided by an embodiment of the present invention, Figure 5 The embodiment shown in the figure describes in detail how to determine whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal. Figure 5 , the fragment detection method in the embodiment of the present invention includes:

[0082] S210 , receiving a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group.

[0083] S220. During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the first time, part of the first sub-sensing signals remain unchanged for a period exceeding a first preset time, or when part of the second sub-sensing signals change for the first time, part of the second sub-sensing signals remain unchanged for a period exceeding a second preset time, it is determined that the first side is damaged.

[0084] refer to Figure 1 , Figure 2 and Figure 3It can be understood that, when the silicon wafer moves along the first direction X with the silicon wafer transfer stage, if the first side 10 of the silicon wafer is not broken, the first sub-sensing signal output by the first sensor 511 in the first sensor group 51 will change for the first time at the same time, and the second sub-sensing signal output by the second sensor 521 in the second sensor group 52 will also change for the first time at the same time. If the first side 10 of the silicon wafer is broken, when the silicon wafer moves along the first direction X with the silicon wafer transfer stage, when the first sub-sensing signal output by some of the first sensors 511 changes for the first time, some of the first sub-sensing signals output by the first sensors 511 do not change at the same time, or when the second sub-sensing signal output by some of the second sensors 521 changes for the first time, some of the second sub-sensing signals output by the second sensors 521 do not change at the same time.

[0085] Considering the installation error of the first sensor 511 in the first sensor group 51, that is, the multiple first sensors 511 along the second direction Y do not completely overlap, and the installation error of the second sensor 521 in the second sensor group 51, that is, the multiple second sensors 511 along the second direction Y do not completely overlap, in order to avoid the installation error causing false detection, the embodiment of the present invention is arranged that during the movement of the silicon wafer along the first direction X, if when some of the first sub-sensing signals change for the first time, some of the first sub-sensing signals remain unchanged for a time exceeding the first preset time, or when some of the second sub-sensing signals change for the first time, some of the second sub-sensing signals remain unchanged for a time exceeding the second preset time, then it is determined that the first edge 10 is damaged. It should be noted that the embodiment of the present invention does not limit the specific values ​​of the above-mentioned first preset time and the second preset time, and the two can be the same or different, for example, the first preset time and the second preset time can both be 100ms.

[0086] S230. During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the second time, part of the first sub-sensing signals remain unchanged for a time exceeding a third preset time, or when part of the second sub-sensing signals changes for the second time, part of the second sub-sensing signals remain unchanged for a time exceeding a fourth preset time, it is determined that the second side is damaged.

[0087] refer to Figure 1 , Figure 2 and Figure 3It can be understood that, when the silicon wafer moves along the first direction X with the silicon wafer transfer stage, if the second side 20 of the silicon wafer is not broken, the first sub-sensing signal output by the first sensor 511 in the first sensor group 51 will change for the second time at the same time, and the second sub-sensing signal output by the second sensor 521 in the second sensor group 52 will also change for the second time at the same time. If the second side 20 of the silicon wafer is broken, when the silicon wafer moves along the first direction X with the silicon wafer transfer stage, when the first sub-sensing signals output by some of the first sensors 511 change for the second time, some of the first sub-sensing signals output by the first sensors 511 do not change at the same time, or when the second sub-sensing signals output by some of the second sensors 521 change for the second time, some of the second sub-sensing signals output by the second sensors 521 do not change at the same time.

[0088] Considering the installation error of the first sensor 511 in the first sensor group 51, that is, the multiple first sensors 511 along the second direction Y do not completely overlap, and the installation error of the second sensor 521 in the second sensor group 51, that is, the multiple second sensors 511 along the second direction Y do not completely overlap, in order to avoid the installation error causing false detection, the embodiment of the present invention is arranged that during the movement of the silicon wafer along the first direction X, if when some of the first sub-sensing signals change for the second time, some of the first sub-sensing signals remain unchanged for a time exceeding the third preset time, or when some of the second sub-sensing signals change for the second time, some of the second sub-sensing signals remain unchanged for a time exceeding the fourth preset time, then it is determined that the second side 20 is damaged. It should be noted that the embodiment of the present invention does not limit the specific values ​​of the third preset time and the fourth preset time, and the two can be the same or different, for example, the third preset time and the fourth preset time can both be 100ms.

[0089] S240 , determining whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal.

[0090] Further, determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal further includes:

[0091] During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the first time, part of the first sub-sensing signals remain unchanged for a time exceeding the fifth preset time, or when part of the second sub-sensing signals change for the first time, part of the second sub-sensing signals remain unchanged for a time exceeding the sixth preset time, then it is determined that the damage length dimension of the first side in the first direction is greater than the first preset dimension, wherein the fourth preset time is greater than the first preset time, and the sixth preset time is greater than the second preset time.

[0092] During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the second time, part of the first sub-sensing signals remain unchanged for a time exceeding the seventh preset time, or when part of the second sub-sensing signals change for the second time, part of the second sub-sensing signals remain unchanged for a time exceeding the eighth preset time, it is determined that the damage length dimension of the second side in the first direction is greater than the second preset dimension, wherein the third preset time is greater than the seventh preset time, and the fourth preset time is greater than the eighth preset time.

[0093] It should be noted that the embodiment of the present invention does not limit the specific values ​​of the fifth preset time, the sixth preset time, the seventh preset time, and the eighth preset time, and they can be the same or different, and those skilled in the art can set them according to actual conditions. It should also be noted that the embodiment of the present invention does not limit the first preset size and the second preset size, and they can be the same or different, and those skilled in the art can set them according to actual conditions.

[0094] The embodiment of the present invention is configured to further determine whether the damage length of the first side in the first direction exceeds the first preset size, and whether the damage length of the second side in the first direction exceeds the second preset size, so that the staff can more clearly understand the damage conditions of the first side and the second side.

[0095] refer to Figure 2 and Figure 3 The third sensor group 53 includes at least one third sensor 531, and the third sensing signal output by the third sensor group 53 includes at least one third sub-sensing signal. The fourth sensor group 54 includes at least one fourth sensor 541, and the fourth sensing signal output by the fourth sensor group 54 includes at least one fourth sub-sensing signal. Figure 6 A flowchart of another fragment detection method provided by an embodiment of the present invention, Figure 6 The illustrated embodiment provides a detailed description of how to determine whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal. Figure 6 , the fragment detection method in the embodiment of the present invention includes:

[0096] S310 , receiving a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group.

[0097] S320 , determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal.

[0098] S330 , when the silicon wafer moves along the first direction, if the third sub-sensing signal changes more than twice or less than twice, it is determined that the third side is damaged.

[0099] refer to Figure 1 , Figure 2 and Figure 3 It can be understood that, when the silicon wafer moves along the first direction X with the silicon wafer transfer platform, if the third side 30 of the silicon wafer is not broken, the third sub-sensing signal output by the third sensor 531 in the third sensor group 53 should change simultaneously and twice. If the third side 30 of the silicon wafer is broken, the third sub-sensing signal output by the third sensor 531 may change more than twice (more than twice or less than twice). Therefore, the broken fragment judgment module 60 can determine that the third side 30 is broken when the number of changes of the received third sub-sensing signal is more than twice or less than twice.

[0100] S340 , when the silicon wafer moves along the first direction, if the fourth sub-sensing signal changes more than twice or less than twice, it is determined that the fourth side is damaged.

[0101] refer to Figure 1 , Figure 2 and Figure 3 It can be understood that, in the process of the silicon wafer moving along the first direction X with the silicon wafer transfer stage, if the fourth side 40 is not broken, the fourth sub-sensing signal output by the fourth sensor 541 in the fourth sensor group 54 should change simultaneously and twice. If the fourth side 40 of the silicon wafer is broken, the fourth sub-sensing signal output by the fourth sensor 541 may change more than twice (more than twice or less than twice). Therefore, the broken fragment judgment module 60 can determine that the fourth side 40 is broken when the number of changes in the received fourth sub-sensing signal is more than twice or less than twice.

[0102] In another possible implementation, reference Figure 2 and Figure 3 The third sensor group 53 includes at least one third sensor 531, and the third sensing signal output by the third sensor group 53 includes at least one third sub-sensing signal. The fourth sensor group 54 includes at least one fourth sensor 541, and the fourth sensing signal output by the fourth sensor group 54 includes at least one fourth sub-sensing signal. The third sensor 531 and the fourth sensor 541 correspond one to one. Along the second direction Y, the third sensor 531 and the fourth sensor 541 overlap. Figure 7 A flowchart of another fragment detection method provided by an embodiment of the present invention, Figure 7 The illustrated embodiment provides a detailed description of how to determine whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal. Figure 7, the fragment detection method in the embodiment of the present invention includes:

[0103] S410 , receiving a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group.

[0104] S420 , determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal.

[0105] S430 , when the silicon wafer moves along the first direction, if the corresponding third sub-sensing signal is different from the corresponding fourth sub-sensing signal, it is determined that the third side or the fourth side is damaged.

[0106] refer to Figure 1 and 2 It can be understood that, when the third sensor 531 and the fourth sensor 541 correspond one to one and overlap along the second direction Y, the broken fragment judgment module 60 can determine whether the third side 30 and the fourth side 40 of the silicon wafer are damaged according to whether the received third sub-sensing signal and the fourth sub-sensing signal are the same. Specifically, in the process of the silicon wafer moving along the first direction X with the silicon wafer transfer platform, if the third side 30 and the fourth side 40 of the silicon wafer are not broken, the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521 should be the same, that is, the third sensor 531 and the fourth sensor 541 both sense the silicon wafer, or neither senses the silicon wafer. If the third side 30 or the fourth side 40 of the silicon wafer is broken, the first sub-sensing signal output by the first sensor 511 and the second sub-sensing signal output by the second sensor 521 will be different, that is, only the third sensor 531 senses the silicon wafer, or only the fourth sensor 541 senses the silicon wafer.

[0107] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A silicon wafer breakage detection device, wherein the silicon wafer comprises a first edge and a second edge arranged opposite to each other along a first direction and a third edge and a fourth edge arranged opposite to each other along a second direction; the first direction and the second direction intersect; the silicon wafer moves along the first direction with a silicon wafer transfer platform; It is characterized in that The fragment detection device includes a detection module and a fragment judgment module; The detection module includes a first sensor group, a second sensor group, a third sensor group and a fourth sensor group; the first sensor group is used to sequentially sense the first edge and the second edge, the second sensor group is used to sequentially sense the first edge and the second edge, and the sum of the sensing ranges of the first sensor group and the second sensor group in the second direction is greater than or equal to the length of the first edge; the third sensor group is used to sense the third edge; and the fourth sensor group is used to sense the fourth edge; The broken fragment judgment module is communicatively connected to the first sensor group, the second sensor group, the third sensor group and the fourth sensor group respectively, and is used to receive a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group and a fourth sensing signal output by the fourth sensor group, and determines whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal, and determines whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal.

2. The fragment detection device according to claim 1, characterized in that: The sensing range of the first sensor group in the second direction is greater than or equal to half the length of the first side; A sensing range of the second sensor group in the second direction is greater than or equal to half of the length of the second side.

3. The fragment detection device according to claim 1, characterized in that: The first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals; The second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals; The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; The fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal.

4. The fragment detection device according to claim 3, characterized in that: The third sensor and the fourth sensor correspond one to one; Along the second direction, the third sensor and the fourth sensor overlap.

5. The fragment detection device according to claim 3, characterized in that: The first sensor comprises a photoelectric sensor; The second sensor comprises a photoelectric sensor; The third sensor comprises a photoelectric sensor; The fourth sensor includes a photosensor.

6. A method for detecting silicon wafer fragments, applied to the fragment detection device according to any one of claims 1 to 5, characterized in that: The fragment detection method comprises: receiving a first sensing signal output by the first sensor group, a second sensing signal output by the second sensor group, a third sensing signal output by the third sensor group, and a fourth sensing signal output by the fourth sensor group; determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal; Whether the third side and the fourth side of the silicon wafer are damaged is determined according to the third sensing signal and the fourth sensing signal.

7. The fragment detection method according to claim 6, characterized in that: The first sensor group includes at least two first sensors arranged along the second direction, and the first sensing signal output by the first sensor group includes at least two first sub-sensing signals; the second sensor group includes at least two second sensors arranged along the second direction, and the second sensing signal output by the second sensor group includes at least two second sub-sensing signals; Determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal includes: During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the first time, part of the first sub-sensing signals remain unchanged for a time exceeding a first preset time, or when part of the second sub-sensing signals changes for the first time, part of the second sub-sensing signals remain unchanged for a time exceeding a second preset time, it is determined that the first edge is damaged; During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the second time, part of the first sub-sensing signals remain unchanged for a time exceeding a third preset time, or when part of the second sub-sensing signals changes for the second time, part of the second sub-sensing signals remain unchanged for a time exceeding a fourth preset time, then it is determined that the second side is damaged.

8. The fragment detection method according to claim 7, characterized in that: Determining whether the first side and the second side of the silicon wafer are damaged according to the first sensing signal and the second sensing signal, further comprising: In the process of the silicon wafer moving along the first direction, if, when part of the first sub-sensing signals changes for the first time, part of the first sub-sensing signals remain unchanged for more than a fifth preset time, or when part of the second sub-sensing signals changes for the first time, part of the second sub-sensing signals remain unchanged for more than a sixth preset time, it is determined that the damage length dimension of the first side in the first direction is greater than the first preset dimension, wherein the fourth preset time is greater than the first preset time, and the sixth preset time is greater than the second preset time; During the movement of the silicon wafer along the first direction, if, when part of the first sub-sensing signals changes for the second time, part of the first sub-sensing signals remain unchanged for a time exceeding a seventh preset time, or when part of the second sub-sensing signals changes for the second time, part of the second sub-sensing signals remain unchanged for a time exceeding an eighth preset time, it is determined that the damaged length dimension of the second side in the first direction is greater than the second preset dimension, wherein the third preset time is greater than the seventh preset time, and the fourth preset time is greater than the eighth preset time.

9. The fragment detection method according to claim 6, characterized in that: The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal; Determining whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal includes: During the movement of the silicon wafer along the first direction, if the third sub-sensing signal changes more than twice or less than twice, it is determined that the third side is damaged; During the movement of the silicon wafer along the first direction, if the fourth sub-sensing signal changes more than twice or less than twice, it is determined that the fourth side is damaged.

10. The fragment detection method according to claim 6, characterized in that: The third sensor group includes at least one third sensor, and the third sensing signal output by the third sensor group includes at least one third sub-sensing signal; the fourth sensor group includes at least one fourth sensor, and the fourth sensing signal output by the fourth sensor group includes at least one fourth sub-sensing signal; the third sensor and the fourth sensor correspond to each other one by one; along the second direction, the third sensor and the fourth sensor overlap; Determining whether the third side and the fourth side of the silicon wafer are damaged according to the third sensing signal and the fourth sensing signal includes: During the process of the silicon wafer moving along the first direction, if the corresponding third sub-sensing signal is different from the corresponding fourth sub-sensing signal, it is determined that the third side or the fourth side is damaged.

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