Vertically stacked light-emitting diode structure
By vertically stacking multiple light emitting elements on the substrate and using reflective layer technology, the problem of difficult to reduce and repair the area of the micro-light emitting diode is solved, and the effect of smaller area and rapid repair is achieved.
Patent Information
- Application Number
- CN202311243747.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-25
- Publication Date
- 2025-04-04
AI Technical Summary
The horizontal arrangement of existing micro-light emitting diodes makes it difficult to further reduce its area and is difficult to replace and repair when certain components are damaged.
Using a vertically stacked light emitting diode structure, the area of the light emitting diode is reduced by stacking multiple light emitting elements on a substrate and reflecting and filtering light with a reflective layer. Meanwhile, the electrodes of the light emitting element are connected to multiple connection points of the substrate, allowing for overall replacement and repair.
The area of the light emitting diode structure is reduced, and the overall structure can be quickly replaced when the components are damaged, solving the difficulty of repairing the traditional structure.
Smart Images
Figure CN119764302A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a vertically stacked light emitting diode structure, and more particularly to a vertically stacked light emitting diode structure which can further reduce the area and is easy to repair. Background Art
[0002] Micro LED is an emerging display technology that consists of even smaller light-emitting chips. Compared with existing light-emitting diode (LED) or organic light-emitting diode (OLED) display technologies, micro LED has higher brightness, contrast and color expression, as well as higher energy efficiency and long life.
[0003] Compared with existing display technologies, micro-LEDs have many advantages. The first is brightness and contrast. The brightness of micro-LEDs can be more than 10 times that of ordinary organic light-emitting diodes, and the contrast is also higher. This makes micro-LED displays significantly improved in color reproduction and image quality.
[0004] Continuing from the above, the advantage of micro-LEDs is secondly the color expression. Since the micro-LED display uses a pure light source, it can display a wider color gamut, thus providing more realistic and vivid colors. At the same time, the micro-LED display can also achieve local dimming, which means that it can achieve independent brightness adjustment of different areas on the same screen, thus achieving better contrast and energy efficiency.
[0005] Continuing from the above, the third advantage is the energy efficiency and longer lifespan, and the micro-LED uses a pure light source, so there is no need for a backlight and a color filter layer, thereby improving the light output efficiency.
[0006] Due to its advantages, micro-LEDs have become the technology of choice for many high-end display products, including smartphones, tablets, TVs, VR / AR helmets and automotive displays.
[0007] As consumers' demand for higher quality and higher resolution displays continues to increase, micro-LED technology has begun to receive more and more attention. Compared with traditional LCD, LED and OLED displays, micro-LED displays have higher brightness and better contrast, as well as a wider color space, and are therefore regarded as an important development direction for the next generation of display technology.
[0008] Micro LEDs also offer advantages in terms of reliability and long-term cost of use. Micro LEDs are more economical than other technologies due to their long life and high durability. Micro LEDs have low power consumption and long life, so they can maintain high-quality displays for a long time without requiring excessive maintenance or replacement of parts.
[0009] However, conventional micro-LEDs are red, green and blue diodes arranged horizontally, making it difficult to further reduce the overall area of the micro-LEDs. When one of the conventional micro-LEDs is damaged, it is difficult to replace or repair it due to its horizontal arrangement. Therefore, as electronic products are becoming increasingly miniaturized, the industry needs an LED structure that can effectively reduce the light-emitting area and is easy to replace or repair.
[0010] In view of the above-mentioned problems of the conventional technology, the present invention provides a vertically stacked LED structure, which stacks a plurality of light-emitting elements on a substrate, and wherein one of the electrodes of the plurality of light-emitting elements is individually extended to connect to a plurality of connection points of the substrate, thereby reducing the area of the LED structure. When one or more of the light-emitting elements are damaged, the corresponding substrate is removed and the entire vertically stacked LED structure is directly replaced. Summary of the invention
[0011] One object of the present invention is to provide a vertically stacked LED structure, in which a plurality of light-emitting elements are stacked on a substrate, and one of the electrodes of the plurality of light-emitting elements is individually extended to connect to a plurality of connection points of the substrate, and the other electrodes of the plurality of light-emitting elements are collectively connected to a shared connection point. This structure provides a light-emitting diode with a smaller area, and when one or more of the light-emitting elements are damaged, the substrate is removed accordingly, and the entire vertically stacked LED structure is directly replaced to quickly repair the micro light-emitting diode panel.
[0012] In order to achieve the above-mentioned purposes and effects, the present invention provides a vertically stacked light-emitting diode structure, which includes: a substrate, a first light-emitting element, a first reflective layer, a second light-emitting element, a second reflective layer and a third light-emitting element, a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals on an upper side of the substrate, a first bump, a second bump, a third bump and a shared bump are arranged at intervals on a lower side of the substrate, the first connection point is electrically connected to the first bump, the second connection point is electrically connected to the second bump, the third connection point is electrically connected to the third bump, and the shared connection point is electrically connected to the shared bump, the first light-emitting element is arranged on an upper side of the substrate, a shared electrode is electrically connected to the shared connection point on a lower side of the first light-emitting element, and a first bump is electrically connected to the shared bump on a lower side of the first light-emitting element. The electrode is electrically connected to the first connection point, the first reflective layer is arranged on one side of the first light-emitting element, the second light-emitting element is arranged on one side of the first reflective layer, one side of the second light-emitting element is electrically connected to the common electrode, one side of the second light-emitting element is electrically connected to the second connection point via a second electrode, the second reflective layer is arranged on one side of the second light-emitting element, the third light-emitting element is arranged on one side of the second reflective layer, one side of the third light-emitting element is electrically connected to the common electrode, one side of the third light-emitting element is electrically connected to the third connection point via a third electrode, wherein a first area of the first light-emitting element is larger than a second area of the second light-emitting element, and the second area of the second light-emitting element is larger than a third area of the third light-emitting element; with this structure, a light-emitting diode structure with a smaller area and capable of being replaced and repaired as a whole is provided.
[0013] In order to achieve the above-mentioned purposes and effects, the present invention provides a vertically stacked light-emitting diode structure, which includes: a substrate, a first light-emitting element, a first reflective layer, a second light-emitting element, a second reflective layer and a third light-emitting element, a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals on an upper side of the substrate, a first bump, a second bump, a third bump and a shared bump are arranged at intervals on a lower side of the substrate, the first connection point is electrically connected to the first bump, the second connection point is electrically connected to the second bump, the third connection point is electrically connected to the third bump, and the shared connection point is electrically connected to the shared bump, the first light-emitting element is arranged on an upper side of the substrate, a shared electrode is electrically connected to the shared connection point on a lower side of the first light-emitting element, and a first electrode is electrically connected to the shared connection point on a upper side of the first light-emitting element. The first electrode is electrically connected to the first connection point, the first reflective layer is arranged on one side of the first light-emitting element, the second light-emitting element is arranged on one side of the first reflective layer, one side of the second light-emitting element is electrically connected to the common electrode, one side of the second light-emitting element is electrically connected to the second connection point via a second electrode, the second reflective layer is arranged on one side of the second light-emitting element, the third light-emitting element is arranged on one side of the second reflective layer, one side of the third light-emitting element is electrically connected to the common electrode, one side of the third light-emitting element is electrically connected to the third connection point via a third electrode, wherein a first area of the first light-emitting element is smaller than a second area of the second light-emitting element, and the second area of the second light-emitting element is smaller than a third area of the third light-emitting element; with this structure, a light-emitting diode structure with a smaller area and capable of being replaced and repaired as a whole is provided.
[0014] In an embodiment of the present invention, the first connection point, the second connection point, the third connection point and the shared connection point are respectively disposed on the upper outer edge of the substrate and are located at an outer edge of the substrate.
[0015] In an embodiment of the present invention, the first light is red light, green light or blue light.
[0016] In an embodiment of the present invention, the second light is red light, green light or blue light.
[0017] In an embodiment of the present invention, the third light is red light, green light or blue light. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 : It is a schematic structural perspective view of the first embodiment of the present invention; Figure 2 : It is a schematic structural diagram of the first embodiment of the present invention; Figure 3 : It is a schematic top view of the first embodiment of the present invention; Figure 4 : It is a schematic structural perspective view of a second embodiment of the present invention; Figure 5 : It is a schematic structural diagram of a second embodiment of the present invention; and Figure 6 : It is a schematic top view of the second embodiment of the present invention.
Figure number comparison
[0019] In order to further understand and appreciate the structural features and effects of the present invention, a preferred embodiment and detailed description are provided as follows:
[0020] In view of the above-mentioned problems of the conventional technology, the present invention is a vertically stacked light-emitting diode structure, which is a first light-emitting element, a first reflective layer, a second light-emitting element, a second reflective layer and a third light-emitting element stacked in sequence on an upper side of a substrate. The first light-emitting element, the second light-emitting element and the third light-emitting element are respectively electrically connected to connection points disposed on the edge of the substrate by electrodes, and the first reflective layer and the second reflective layer are used to reflect and filter the light of the first light-emitting element, the second light-emitting element and the third light-emitting element. The stacked structure further reduces the area of the light-emitting diode structure, thereby solving the problem that the area of the conventional micro light-emitting diode is difficult to further reduce and difficult to replace and repair.
[0021] See also Figure 1 as well as Figure 2 , Figure 1 is a schematic structural perspective view of a first embodiment of the present invention, Figure 21 is a schematic structural diagram of the first embodiment of the present invention. As shown in the figure, this embodiment is the first embodiment. This embodiment is a vertically stacked light-emitting diode structure 1, which includes a substrate 10, a first light-emitting element 20, a first reflective layer 30, a second light-emitting element 40, a second reflective layer 50 and a third light-emitting element 60, and these elements are stacked correspondingly to each other.
[0022] See again Figure 1 as well as Figure 2 As shown in the figure, in this embodiment, a first connection point 12, a second connection point 14, a third connection point 16 and a shared connection point 18 are arranged at intervals on an upper side of the substrate 10, and a first bump B1, a second bump B2, a third bump B3 and a shared bump B4 are arranged at intervals on a lower side of the substrate 10. The first connection point 12 is electrically connected to the first bump B1, the second connection point 14 is electrically connected to the second bump B2, the third connection point 16 is electrically connected to the third bump B3, and the shared connection point 18 is electrically connected to the shared bump B4. In this embodiment, these connection points are individually electrically connected to the bumps inside the substrate 10. The first light-emitting element 20 is arranged on an upper side of the substrate 10, and a common electrode E4 is arranged on a lower side of the first light-emitting element 20. The shared connection point 18 is electrically connected. The first light-emitting element 20 is electrically connected to the first connection point 12 via a first electrode E1 at one end. The first reflective layer 30 is disposed at one end of the first light-emitting element 20. The second light-emitting element 40 is disposed at one end of the first reflective layer 30. The second light-emitting element 40 is electrically connected to the shared electrode E4 at one end. The second light-emitting element 40 is electrically connected to the second connection point 14 at one end via a second electrode E2 at one end. The second reflective layer 50 is disposed at one end of the second light-emitting element 40. The third light-emitting element 60 is disposed at one end of the second reflective layer 50. The third light-emitting element 60 is electrically connected to the shared electrode E4 at one end. The third light-emitting element 60 is electrically connected to the third connection point 16 at one end via a third electrode E3 at one end.
[0023] See again Figure 1 as well as Figure 2 Also see Figure 3 , Figure 3This is a top view schematic diagram of the first embodiment of the present invention. As shown in the figure, in this embodiment, the light emitting surface of the first light emitting element 20 has a first area, the light emitting surface of the second light emitting element 40 has a second area, and the light emitting surface of the third light emitting element 60 has a third area. In this embodiment, the first area is larger than the second area, and the second area is larger than the third area, so that the first light emitting element 20, the second light emitting element 40 and the third light emitting element 60 form a structure with a gradually decreasing area from bottom to top, so that the light emitting element with a smaller area is arranged above the light emitting element with a larger area, so as to avoid the upper light emitting element blocking the lower light emitting element when vertically stacked.
[0024] Continuing with the above, in this embodiment, the substrate 10 is a rectangular sheet structure, and the first connection point 12, the second connection point 14, the third connection point 16 and the shared connection point 18 are respectively distributed at the four corners of the substrate 10 and located at an outer edge of the substrate 10, so that the first light-emitting element 20 is surrounded by the first connection point 12, the second connection point 14, the third connection point 16 and the shared connection point 18.
[0025] Continuing from the above, in this embodiment, the first bump B1, the second bump B2, the third bump B3 and the shared bump B4 disposed under the substrate 10 can be further electrically connected to another substrate, for example, the substrate 10 is disposed on a control circuit board of a display, but this is not limited thereto.
[0026] Continuing with the above, in this embodiment, the light emission wavelength of the first light emitting element 20 is different from the light emission wavelength of the second light emitting element 40, the light emission wavelength of the second light emitting element 40 is different from the light emission wavelength of the third light emitting element 60, and the light emission wavelength of the first light emitting element 20 is different from the light emission wavelength of the third light emitting element 60. For example, the first light emitting element 40, the second light emitting element 40 and the third light emitting element 60 emit light of different colors, but this is not limited thereto.
[0027] Continuing from the above, in this embodiment, the first light emitting element 20 emits red light, green light or blue light, but the present invention is not limited thereto.
[0028] Continuing from the above, in this embodiment, the second light emitting element 40 emits red light, green light or blue light, but the present invention is not limited thereto.
[0029] Continuing from the above, in this embodiment, the third light emitting element 60 emits red light, green light or blue light, but the present invention is not limited thereto.
[0030] Continuing with the above, in this embodiment, the first light-emitting element 20, the second light-emitting element 40 and the third light-emitting element 60 respectively include an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer (not shown). In this embodiment, the N-type semiconductor layer of the first light-emitting element 20 is electrically connected to the common electrode E4, the P-type semiconductor layer of the first light-emitting element 20 is electrically connected to the first electrode E1, the N-type semiconductor layer of the second light-emitting element 40 is electrically connected to the common electrode E4, the P-type semiconductor layer of the second light-emitting element 40 is electrically connected to the second electrode E2, the N-type semiconductor layer of the third light-emitting element 60 is electrically connected to the common electrode E4, and the P-type semiconductor layer of the third light-emitting element 60 is electrically connected to the third electrode E3. The light-emitting two-element structure with vertical electrodes is utilized to further reduce the area of the vertically stacked light-emitting diode structure 1.
[0031] Continuing from the above, the first light-emitting element 20, the second light-emitting element 40 and the third light-emitting element 60 are light-emitting diodes, and the semiconductor materials thereof are preliminarily injected or doped to produce p and n structures. Like other diodes, the current in the light-emitting diode can easily flow from the p-pole (anode) to the n-pole (cathode), but not in the opposite direction. Two different carriers: holes and electrons flow from the electrodes to the p and n structures under the action of different electrode voltages. When holes and electrons meet and recombine, the electrons fall to a lower energy level and release energy in the form of photons (light). The first light-emitting element 20, the second light-emitting element 40 and the third light-emitting element 60 can be applied to micro light-emitting diodes (Micro Light-emitting Diodes, micro light-emitting diodes) which are light-emitting diodes with a size below microns, but are not limited thereto.
[0032] Continuing from the above, in this embodiment, when one or more of the first light emitting element 20 , the second light emitting element 40 and the third light emitting element 60 is damaged, the substrate 10 can be directly removed to replace the vertically stacked light emitting diode structure 1 .
[0033] Continuing from the above, in this embodiment, the first light-emitting element 20, the first reflective layer 30, the second light-emitting element 40, the second reflective layer 50 and the third light-emitting element 60 are light-transmitting layers for light of the first light-emitting element 20, the second light-emitting element 40 and the third light-emitting element 60 to pass through.
[0034] Continuing with the above, in this embodiment, the first reflective layer 30 is a narrow bandpass film, the first reflective layer 30 allows the light of the first light-emitting element 20 to pass through, and the first reflective layer 30 reflects the light of the second light-emitting element 40 and the light of the third light-emitting element 60 to improve the light extraction efficiency of the first light-emitting element 20, the second light-emitting element 40 and the third light-emitting element 60.
[0035] Continuing with the above, in this embodiment, the second reflective layer 50 is a narrow bandpass film, the second reflective layer 50 allows the light of the first light-emitting element 20 and the light of the second light-emitting element 40 to pass through, and the second reflective layer 50 reflects the light of the third light-emitting element 60 to improve the light extraction efficiency of the first light-emitting element 20, the second light-emitting element 40 and the third light-emitting element 60.
[0036] Continuing from the above, in this embodiment, the first reflective layer 30 and the second reflective layer 50 are further made of insulating materials, and the first reflective layer 30 blocks the first light-emitting element 20 and the second light-emitting element 40 , and the second reflective layer 50 blocks the second light-emitting element 40 and the third light-emitting element 60 .
[0037] Continuing from the above, in one embodiment, the material of the substrate 10 is selected from one of gallium nitride, gallium arsenide, gallium phosphide, indium phosphide, silicon carbide and aluminum oxide, but the embodiment is not limited thereto.
[0038] Continuing from the above, in one embodiment, the material of each of the first light emitting element 20 , the second light emitting element 40 and the third light emitting element 60 is selected from one of gallium nitride, aluminum indium gallium phosphide, aluminum gallium arsenide and aluminum gallium phosphide, but the embodiment is not limited thereto.
[0039] See also Figure 4 as well as Figure 5 , Figure 4 is a schematic structural perspective view of a second embodiment of the present invention, Figure 5 1 is a schematic diagram of the structure of the second embodiment of the present invention. As shown in the figure, this embodiment is the second embodiment. This embodiment is based on the above-mentioned first embodiment. This embodiment is a vertically stacked light-emitting diode structure 1, which includes a substrate 10, a first light-emitting element 20, a first reflective layer 30, a second light-emitting element 40, a second reflective layer 50 and a third light-emitting element 60. These elements are stacked correspondingly to each other.
[0040] See again Figure 4 as well as Figure 5As shown in the figure, in this embodiment, a first connection point 12, a second connection point 14, a third connection point 16 and a shared connection point 18 are arranged at intervals on an upper side of the substrate 10, and a first bump B1, a second bump B2, a third bump B3 and a shared bump B4 are arranged at intervals on a lower side of the substrate 10. The first connection point 12 is electrically connected to the first bump B1, the second connection point 14 is electrically connected to the second bump B2, the third connection point 16 is electrically connected to the third bump B3, and the shared connection point 18 is electrically connected to the shared bump B4. In this embodiment, these connection points are individually electrically connected to the bumps inside the substrate 10. The first light-emitting element 20 is arranged on an upper side of the substrate 10, and a common electrode E4 is arranged on a lower side of the first light-emitting element 20. The shared connection point 18 is electrically connected. The first light-emitting element 20 is electrically connected to the first connection point 12 via a first electrode E1 at one end. The first reflective layer 30 is disposed at one end of the first light-emitting element 20. The second light-emitting element 40 is disposed at one end of the first reflective layer 30. The second light-emitting element 40 is electrically connected to the shared electrode E4 at one end. The second light-emitting element 40 is electrically connected to the second connection point 14 at one end via a second electrode E2 at one end. The second reflective layer 50 is disposed at one end of the second light-emitting element 40. The third light-emitting element 60 is disposed at one end of the second reflective layer 50. The third light-emitting element 60 is electrically connected to the shared electrode E4 at one end. The third light-emitting element 60 is electrically connected to the third connection point 16 at one end via a third electrode E3 at one end.
[0041] See again Figure 4 as well as Figure 5 Also see Figure 6 , Figure 6 This is a top view schematic diagram of the second embodiment of the present invention. As shown in the figure, in this embodiment, the light emitting surface of the first light emitting element 20 has a first area, the light emitting surface of the second light emitting element 40 has a second area, and the light emitting surface of the third light emitting element 60 has a third area. In this embodiment, the first area is smaller than the second area, and the second area is smaller than the third area, so that the first light emitting element 20, the second light emitting element 40 and the third light emitting element 60 form a structure with gradually larger areas from bottom to top, such as an inverted trapezoid, with a light emitting element with a smaller area being arranged below a light emitting element with a larger area. When vertically stacked, a light emitting element with higher luminous intensity can be arranged below, and a light emitting element with lower luminous intensity can be arranged above, so as to adjust the light emitting light of the overall light emitting element. The relationship between other elements in this embodiment is the same as that in the above embodiments, so it is not repeated here.
[0042] In summary, the present invention provides a vertically stacked LED structure, which stacks a plurality of light-emitting elements on a substrate, and one electrode of the plurality of light-emitting elements is individually extended to connect to a plurality of connection points at the edge of the substrate, and the other electrodes of the plurality of light-emitting elements are collectively connected to a single shared connection point, thereby reducing the overall light-emitting area. When one or more of the light-emitting elements are damaged, the substrate together with the plurality of light-emitting elements can be removed accordingly, and the entire vertically stacked LED structure can be directly replaced to quickly repair the panel of the micro-LED. This structure solves the problem that the area of the conventional micro-LED is difficult to further reduce and difficult to replace and repair.
[0043] The order of execution of each step in the above embodiment does not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application.
[0044] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent changes and modifications to the shape, structure, characteristics and spirit described in the claims of the present invention should be included in the scope of the claims of the present invention.
Claims
1. A vertically stacked light emitting diode structure, characterized in that: It contains: A substrate, wherein a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals on an upper portion thereof, and a first bump, a second bump, a third bump and a shared bump are arranged at intervals on a lower portion of the substrate, wherein the first connection point is electrically connected to the first bump, the second connection point is electrically connected to the second bump, the third connection point is electrically connected to the third bump, and the shared connection point is electrically connected to the shared bump; A first light-emitting element is disposed on an upper portion of the substrate, a lower portion of the first light-emitting element is electrically connected to the common connection point via a common electrode, and an upper portion of the first light-emitting element is electrically connected to the first connection point via a first electrode; a first reflective layer disposed above the first light-emitting element; A second light-emitting element is disposed above the first reflective layer, a lower portion of the second light-emitting element is electrically connected to the common electrode, and an upper portion of the second light-emitting element is electrically connected to the second connection point via a second electrode; a second reflective layer disposed above the second light emitting element; and a third light-emitting element disposed on an upper portion of the second reflective layer, wherein a lower portion of the third light-emitting element is electrically connected to the common electrode, and an upper portion of the third light-emitting element is electrically connected to the third connection point via a third electrode; A first area of the first light-emitting element is larger than a second area of the second light-emitting element, and the second area of the second light-emitting element is larger than a third area of the third light-emitting element.
2. The vertically stacked light emitting diode structure according to claim 1, wherein: The first connection point, the second connection point, the third connection point and the shared connection point are respectively arranged on the upper side of the substrate and are located at an outer edge of the substrate.
3. The vertically stacked light emitting diode structure according to claim 1, wherein: The first light emitting element emits red light, green light or blue light.
4. The vertically stacked light emitting diode structure according to claim 1, wherein: The second light emitting element emits red light, green light or blue light.
5. The vertically stacked light emitting diode structure according to claim 1, wherein: The third light emitting element emits red light, green light or blue light.
6. A vertically stacked light emitting diode structure, characterized in that: It contains: A substrate, wherein a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals on an upper portion thereof, and a first bump, a second bump, a third bump and a shared bump are arranged at intervals on a lower portion of the substrate, wherein the first connection point is electrically connected to the first bump, the second connection point is electrically connected to the second bump, the third connection point is electrically connected to the third bump, and the shared connection point is electrically connected to the shared bump; A first light-emitting element is disposed on an upper portion of the substrate, a lower portion of the first light-emitting element is electrically connected to the common connection point via a common electrode, and an upper portion of the first light-emitting element is electrically connected to the first connection point via a first electrode; a first reflective layer disposed above the first light-emitting element; A second light-emitting element is disposed above the first reflective layer, a lower portion of the second light-emitting element is electrically connected to the common electrode, and an upper portion of the second light-emitting element is electrically connected to the second connection point via a second electrode; a second reflective layer disposed above the second light emitting element; and a third light-emitting element disposed on an upper portion of the second reflective layer, wherein a lower portion of the third light-emitting element is electrically connected to the common electrode, and an upper portion of the third light-emitting element is electrically connected to the third connection point via a third electrode; A first area of the first light-emitting element is smaller than a second area of the second light-emitting element, and the second area of the second light-emitting element is smaller than a third area of the third light-emitting element.
7. The vertically stacked light emitting diode structure of claim 6, wherein: The first connection point, the second connection point, the third connection point and the shared connection point are respectively arranged on the upper outer edge of the substrate and are located at an outer edge of the substrate.
8. The vertically stacked light emitting diode structure of claim 6, wherein: The first light emitting element emits red light, green light or blue light.
9. The vertically stacked light emitting diode structure of claim 6, wherein: The second light emitting element emits red light, green light or blue light.
10. The vertically stacked light emitting diode structure of claim 6, wherein: The third light emitting element emits red light, green light or blue light.