A SLP type carrier processing technology control method and device

Abstract

The embodiment of the present invention provides a method and device for controlling the processing technology of an SLP type carrier board, comprising: obtaining a carrier board design drawing, determining the through-hole position of the carrier board design drawing; controlling a device to attach a through-hole dry film at a corresponding position of the copper-plated substrate; controlling a device to perform a first etching operation to thin the copper thickness of the copper-plated substrate with the through-hole dry film attached, so as to obtain a copper-plated substrate after the copper thickness is thinned; controlling a device to perform a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is thinned, and then performing a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes; etching fine circuits and small pad sizes after thinning the copper thickness can ensure etching accuracy, thereby ensuring the hole conduction reliability of the SLP type carrier board, and at the same time, etching can produce fine circuits and small pad sizes, thereby ensuring the dimensional accuracy of circuit components; by adjusting the through-hole offset, the placement position of the robot arm is calibrated to reduce the probability of offset and improve the accuracy of dry film attaching.

Description

Technical Field

[0001] The present invention relates to the field of computer technology, and in particular to a SLP type carrier board processing technology control method and a SLP type carrier board processing technology control device, a computer device and a storage medium. Background Art

[0002] SLP It is a substrate-like PCB, which belongs to the next generation PCB hard board . It can shorten the line width / line spacing from 40 / 50 microns of HDI (High Density Interconnector) to 20 / 35 microns, that is, the minimum line width / spacing will be shortened from 40 microns of HDI to within 30 microns of SLP. From the process point of view, SLP is closer to the IC substrate used for semiconductor packaging, but it has not yet reached the specifications of IC substrates, and its purpose is still to carry various active and passive components, so it still belongs to the category of PCB. In the same area, the SLP board of a smartphone can carry twice as many electronic components as HDI.

[0003] In the existing process method of SLP type substrates, after copper plating the through holes, a dry film is made, and then the circuit pattern is etched out with a solution. When the copper plating layer is thicker, the size of the fine circuits and small pads is smaller during etching, and the probability of residual copper between the circuits is higher. Summary of the invention

[0004] In view of the above problems, embodiments of the present invention are proposed to provide an SLP type substrate processing control device, a computer device and a storage medium that overcome the above problems or at least partially solve the above problems.

[0005] In order to solve the above problems, an embodiment of the present invention discloses a SLP type carrier processing process control method, including:

[0006] Obtaining a carrier-like design drawing, and determining a through-hole position of the carrier-like design drawing;

[0007] The control device affixes a through-hole dry film at a corresponding position of the copper-plated substrate;

[0008] The control device performs a first etching operation to reduce the copper thickness on the copper-plated substrate with the through-hole dry film attached, so as to obtain the copper-plated substrate after the copper thickness is reduced;

[0009] The control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes.

[0010] Preferably, the obtaining of the carrier-like design drawing and determining the through-hole positions of the carrier-like design drawing include:

[0011] Identify multiple front circular arc curves from the front design drawing of the similar carrier board;

[0012] Determine the first circle center position and the first circle area corresponding to the front circular arc curve;

[0013] Obtaining a second circle center position of the carrier-like front design drawing that is in a mirror image position with respect to the first circle center position;

[0014] Determine whether the second circle center position includes multiple segments of reverse circular arc curves, and determine whether the second circle area corresponding to the multiple segments of reverse circular arc curves is the same as the first circle area;

[0015] If the second circle center position includes multiple reverse arc curves and the second circle area corresponding to the multiple reverse arc curves is the same as the first circle area, the first circle center position is determined to be the through hole position of the substrate-like design drawing.

[0016] Preferably, the control device applies a through-hole dry film to a corresponding position of the copper-plated substrate, comprising:

[0017] Get the through hole offset of the through hole dry film pasting position;

[0018] The relative position of the robotic arm and the first circle center position is calibrated according to the through hole offset, and the robotic arm is controlled to attach the through hole dry film at the corresponding position of the copper-plated substrate.

[0019] Preferably, the step of obtaining the through-hole offset of the through-hole dry film pasting position includes:

[0020] Obtaining through-hole drilling accuracy, robot arm vibration accuracy, first device body vibration coefficient, and exposure offset;

[0021] The through-hole offset of the position where the through-hole dry film is pasted is calculated according to the through-hole drilling accuracy, the vibration accuracy of the robot arm, the vibration coefficient of the first device body, and the exposure offset.

[0022] Preferably, the control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes, including:

[0023] Obtaining a vibration coefficient of a second device body;

[0024] Adjusting etching parameters according to the vibration coefficient of the second device body to obtain specific etching parameters;

[0025] Calculating a specific line width loss parameter according to the specific etching parameter;

[0026] The specific line width loss parameter control device is used to adjust the size of the copper-plated substrate after the copper thickness is reduced during the dry film pattern transfer operation, and then a second etching operation is performed to obtain an SLP type carrier with fine circuits and small pad size.

[0027] Preferably, the etching parameters are adjusted according to the vibration coefficient of the second device body to obtain specific etching parameters, including:

[0028] Get depth parameters, inner wire width, and outer wire width;

[0029] Calculate the etching parameters according to the depth parameter, the inner line width of the wire, and the outer line width of the wire;

[0030] The etching parameters are adjusted by the vibration coefficient of the second device body to obtain specific etching parameters.

[0031] The embodiment of the present invention discloses a SLP type carrier processing process control device, comprising:

[0032] A through hole position determination module, used to obtain a carrier-like design drawing and determine the through hole positions of the carrier-like design drawing;

[0033] A dry film module, used for controlling the device to apply a through-hole dry film to the corresponding position of the copper-plated substrate;

[0034] The copper thickness reduction module is used to control the equipment to perform the first etching and copper thickness reduction operation on the copper-plated substrate with the through-hole dry film attached, so as to obtain the copper-plated substrate after the copper thickness is reduced;

[0035] The dry film pattern transfer module is used to control the equipment to perform a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then perform a second etching operation to obtain an SLP type carrier board containing fine circuits and small pad sizes.

[0036] Preferably, the through hole position determination module comprises:

[0037] The recognition submodule is used to recognize multiple front circular arc curves from the front design drawing of the similar carrier board;

[0038] A first determination submodule, used to determine a first circle center position and a first circle area corresponding to the front circular arc curve;

[0039] A first acquisition submodule is used to acquire a second center position of the carrier-like front design drawing that is in a mirror image with the first center position;

[0040] A judging submodule, used to judge whether the second circle center position includes multiple segments of reverse circular arc curves, and to judge whether the second circle area corresponding to the multiple segments of reverse circular arc curves is the same as the first circle area;

[0041] The second determination submodule is used to determine that the first circle center position is a through hole position of a similar substrate design drawing if the second circle center position includes multiple reverse arc curves and the second circle area corresponding to the multiple reverse arc curves is the same as the first circle area.

[0042] An embodiment of the present invention further discloses a computer device, including a memory and a processor, wherein the memory stores a computer program, and the processor implements the above-mentioned steps of SLP type substrate processing process control when executing the computer program.

[0043] The embodiment of the present invention further discloses a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of controlling the processing technology of the SLP type substrate are implemented.

[0044] The embodiments of the present invention include the following advantages:

[0045] In an embodiment of the present invention, the SLP type carrier processing process control method includes: obtaining a carrier-like design drawing and determining the through-hole position of the carrier-like design drawing; controlling a device to attach a through-hole dry film at a corresponding position of the copper-plated substrate; controlling a device to perform a first etching thinning operation on the copper-plated substrate with the through-hole dry film attached to obtain a copper-plated substrate after the copper thickness is thinned; controlling a device to perform a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is thinned, and then performing a second etching operation to obtain an SLP type carrier including fine circuits and small pad sizes; etching fine circuits and small pad sizes after thinning the copper thickness can ensure etching accuracy, thereby ensuring the hole conduction reliability of the SLP type carrier, and at the same time, etching can produce fine circuits and small pad sizes, ensuring the dimensional accuracy of circuit components; by adjusting the through-hole offset, the placement position of the robot arm is calibrated to reduce the probability of offset and improve the accuracy of dry film attachment. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0047] Figure 1 It is a flowchart of a method for controlling a process for processing a SLP type carrier board according to an embodiment of the present invention;

[0048] Figure 2 is a schematic diagram of a design of a carrier-like board according to an embodiment of the present invention;

[0049] Figure 3is a schematic diagram of etching dimensions of a fine circuit and a small pad in an embodiment of the present invention;

[0050] Figure 4 It is a structural block diagram of an embodiment of a SLP type carrier processing process control device of an embodiment of the present invention;

[0051] Figure 5 The diagram is a diagram of the internal structure of a computer device according to an embodiment. DETAILED DESCRIPTION

[0052] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present invention more clearly understood, the embodiments of the present invention are further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0053] In a core concept of an embodiment of the present invention, in an existing SLP type substrate processing method, after copper plating in the through hole, a dry film is made, and then a circuit pattern is etched out with a solution. When the copper plating layer is thicker, the size of the fine circuit and the small pad is smaller during etching, and the probability of residual copper between the circuits is relatively high; however, in an embodiment of the present invention, after copper plating in the through hole, the copper in the through hole protection hole is first covered with a dry film of a corresponding size, and the other exposed parts are pre-thinned with a solution of corrosion to reduce the copper thickness, and then the fine circuit and the small pad size are etched to ensure the etching quality, thereby ensuring the hole conduction reliability of the SLP type substrate, and at the same time, the fine circuit and the small pad size can be etched; specifically, it is necessary to take into account the dimensional error caused by the vibration characteristics of the robot arm of the automation equipment, and the offset is calculated by the vibration accuracy of the robot arm and the vibration coefficient of the equipment body, and the alignment coordinate parameters of the dry film are adjusted according to the offset, so as to improve the accuracy of the dry film pasting of the equipment, improve the processing efficiency and the accuracy of dimensional control.

[0054] Reference Figure 1 , shows a flow chart of steps of an SLP type carrier processing process control method embodiment of the present invention, which may specifically include the following steps:

[0055] Step 101, obtaining a carrier-like design drawing, and determining the position of the through hole in the carrier-like design drawing;

[0056] In an embodiment of the present invention, the processing technology control method can be applied to an integrated semiconductor device, which can be composed of multiple different types of semiconductor devices to realize the functions of multiple semiconductor processing steps, such as material pre-baking equipment, inner layer imaging equipment, drilling equipment, electroplating equipment, browning equipment, lamination and pressing equipment, dry film pasting equipment, exposure equipment, developing equipment, etching equipment, etc. The embodiment of the present invention does not impose too many restrictions on this. The above-mentioned multiple different types of semiconductor devices can be used by equipment such as a robotic arm to operate materials. Specifically, the robotic arm can also be configured with a variety of different devices such as an adsorption device. The embodiment of the present invention does not impose too many restrictions on this; the integrated semiconductor device is also connected to a control terminal or a server, which can be used to control the operation process of the above-mentioned equipment. The terminal can be but not limited to various personal computers, laptops, smart phones, tablet computers and portable wearable devices. The server can be implemented with an independent server or a server cluster composed of multiple servers. The terminal is connected to a variety of semiconductor devices, and the operating system of the terminal can include Android, Harmony OS, IOS, WindowsPhone, Windows, etc. The present invention does not impose too many restrictions on this.

[0057] Specifically, in the embodiment of the present invention, a quasi-substrate design drawing can be first obtained to determine the through-hole positions of the quasi-substrate design drawing; specifically, Figure 2 As shown, the through hole position can be directly identified by combining image recognition with annotation instructions.

[0058] In another preferred embodiment of the present invention, in the case of unclear markings and unclear design drawings, the obtaining of a quasi-carrier board design drawing and determining the position of the through hole in the quasi-carrier board design drawing include: identifying multiple front circular arc curves from the front design drawing of the quasi-carrier board; determining a first center position and a first circular area corresponding to the front circular arc curve; obtaining a second center position of the front design drawing of the quasi-carrier board that is in a mirror image position with the first center position; determining whether the second center position includes multiple reverse circular arc curves, and determining whether the second circular area corresponding to the multiple reverse circular arc curves is the same as the first circular area; if the second center position includes multiple reverse circular arc curves and the second circular area corresponding to the multiple reverse circular arc curves is the same as the first circular area, determining the first center position as the through hole position in the quasi-carrier board design drawing.

[0059] That is, when the marking is unclear and the design drawing is not clear, the arc curve of the front design drawing is identified by image recognition, and the center position and the corresponding circle area are determined according to the above arc curve; then according to the mirror position of the back design drawing of the same PCB, it is determined whether the circle area corresponding to the arc curve at the mirror position is the same as the first circle area. If so, it means that the hole at this position is a through hole, and the other holes are blind holes. In the embodiment of the present invention, only image recognition can be used to identify whether the hole is a through hole or a blind hole, without the need for marking, thereby improving recognition efficiency.

[0060] Step 102, controlling the device to apply a through-hole dry film to the corresponding position of the copper-plated substrate;

[0061] After the through-hole position is identified, the device can be controlled to attach a through-hole dry film to the through-hole position of the copper-plated substrate. Specifically, the size of the through-hole dry film is the same as the designed size of the through-hole.

[0062] Specifically applied to the embodiment of the present invention, the control device affixes a through-hole dry film at a corresponding position of the copper-plated substrate, including: obtaining a through-hole offset of the position where the through-hole dry film is affixed; calibrating the relative position of a robotic arm and the first center position according to the through-hole offset, controlling the robotic arm to affix a through-hole dry film at a corresponding position of the copper-plated substrate, and calibrating the placement position of the robotic arm by adjusting the through-hole offset, thereby reducing the probability of offset and improving the accuracy of affixing the dry film.

[0063] Further, the through-hole offset of the position of the dry film pasting the through-hole is obtained, including: obtaining the through-hole drilling accuracy, the vibration accuracy of the mechanical arm, the vibration coefficient of the first device body, and the exposure offset; the through-hole offset of the position of the dry film pasting the through-hole is calculated according to the through-hole drilling accuracy, the vibration accuracy of the mechanical arm, the vibration coefficient of the first device body, and the exposure offset; in the embodiment of the present invention, considering the dimensional error caused by the vibration characteristics of the automation equipment itself and the actuator mechanical arm, the through-hole offset is calculated by the vibration accuracy of the mechanical arm and the vibration coefficient of the device body, and the alignment coordinate parameter of the dry film pasting, that is, the center position, is adjusted according to the through-hole offset; in addition, the exposure offset refers to the offset of the device body of the exposure device during the exposure process, which can be obtained by measurement; the through-hole drilling accuracy refers to the error parameter of the through-hole aperture in the circuit board; the vibration accuracy of the mechanical arm refers to the dimensional change parameter during the operation of the mechanical arm; the vibration coefficient of the first device body refers to the mean value of the dimensional change parameter of the through-hole dry film pasting device body during the operation, and the above parameters can all be obtained by measurement, and the number of parameters can be multiple, and the embodiment of the present invention does not impose too many restrictions on this.

[0064] In the embodiment of the present invention, the through hole offset is disclosed as follows:

[0065]

[0066] Among them, d Indicates the through hole offset; T i Indicates through-hole drilling accuracy; B i is the vibration accuracy of the robot arm, M is the vibration coefficient of the first equipment body; SW i represents the exposure offset; N refers to the number of through holes, which is a positive integer, and the maximum value of n is N; n and i also refer to the number of through holes, i = 1, 2, 3, 4·n.

[0067] Step 103, the control device performs a first etching operation to reduce the copper thickness on the copper-plated substrate with the through-hole dry film, so as to obtain a copper-plated substrate with reduced copper thickness;

[0068] Furthermore, after the copper-plated substrate is affixed with a through-hole dry film, a first etching operation to reduce the copper thickness can be performed to obtain a copper-plated substrate with reduced copper thickness. Specifically, chemical etching can be used to reduce the copper thickness in other areas where the dry film is not affixed.

[0069] Step 104, the control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes.

[0070] In actual application to the embodiment of the present invention, after the copper thickness reduction operation is performed, the device can be controlled to perform a dry film pattern transfer operation on the copper-plated substrate after the copper thickness reduction, and then a second etching operation can be performed. After the copper thickness is reduced, the etching of fine circuits and small pad sizes can ensure the etching accuracy, thereby ensuring the hole conduction reliability of the SLP type carrier board. At the same time, fine circuits and small pad sizes can be etched to ensure the dimensional accuracy of the circuit devices. The specific effects are as follows: Figure 3 shown.

[0071] Specifically applied to an embodiment of the present invention, the control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier with fine circuits and small pad sizes, including: obtaining a vibration coefficient of a second device body; adjusting etching parameters according to the vibration coefficient of the second device body to obtain specific etching parameters; calculating specific line width loss parameters according to the specific etching parameters; controlling the device to perform size adjustment in the dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced through the specific line width loss parameters, and then performing a second etching operation to obtain an SLP type carrier with fine circuits and small pad sizes.

[0072] The vibration coefficient of the second device body refers to the mean value of the dimensional change parameter during the operation of the etching device body; the etching parameter refers to the etching ability of the etching line; the specific etching parameter refers to the etching parameter adjusted by the vibration coefficient of the second device body; the specific line width loss parameter refers to the error size parameter of the line width during the processing;

[0073] Specifically, the etching parameters are adjusted according to the vibration coefficient of the second device body to obtain specific etching parameters, including obtaining a depth parameter, an inner line width of the wire, and an outer line width of the wire; the etching parameters are calculated according to the depth parameter, the inner line width of the wire, and the outer line width of the wire; the etching parameters are adjusted by the vibration coefficient of the second device body to obtain specific etching parameters; wherein the depth parameter is the depth of etching, that is, the thickness of the copper layer; the outer line width of the wire refers to the lower line width of the wire that is etched under the condition that the etching point is 100%; the inner line width of the wire refers to the lower line width of the wire that is etched under the condition that the etching point is less than 100%; the specific formula is as follows:

[0074]

[0075] E S =E*D;

[0076]

[0077] Wherein, w1 represents the inner line width of the wire, w2 represents the outer line width of the wire, h represents the depth parameter, D represents the vibration coefficient of the second device body, E represents the etching parameter, and E S represents specific etching parameters, K is a specific line width loss parameter, and L represents the conversion empirical coefficient.

[0078] In an embodiment of the present invention, the SLP type carrier processing process control method includes: obtaining a carrier-like design drawing and determining the through-hole position of the carrier-like design drawing; controlling a device to attach a through-hole dry film at a corresponding position of the copper-plated substrate; controlling a device to perform a first etching thinning operation on the copper-plated substrate with the through-hole dry film attached to obtain a copper-plated substrate after the copper thickness is thinned; controlling a device to perform a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is thinned, and then performing a second etching operation to obtain an SLP type carrier including fine circuits and small pad sizes; etching fine circuits and small pad sizes after thinning the copper thickness can ensure etching accuracy, thereby ensuring the hole conduction reliability of the SLP type carrier, and at the same time, etching can produce fine circuits and small pad sizes, ensuring the dimensional accuracy of circuit components; by adjusting the through-hole offset, the placement position of the robot arm is calibrated to reduce the probability of offset and improve the accuracy of dry film attachment.

[0079] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present invention are not limited by the order of the actions described, because according to the embodiments of the present invention, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present invention.

[0080] Reference Figure 4 , shows a structural block diagram of an SLP type carrier processing process control device embodiment of the present invention, which may specifically include the following modules:

[0081] The through hole position determination module 301 is used to obtain a carrier-like design drawing and determine the through hole positions of the carrier-like design drawing;

[0082] A dry film module 302, used to control the device to apply a through-hole dry film on the corresponding position of the copper-plated substrate;

[0083] The copper thickness reduction module 303 is used to control the device to perform a first etching and copper thickness reduction operation on the copper-plated substrate with the through-hole dry film attached thereto, so as to obtain the copper-plated substrate after the copper thickness is reduced;

[0084] The dry film pattern transfer module 304 is used to control the equipment to perform a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then perform a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes.

[0085] Preferably, the through hole position determination module comprises:

[0086] The recognition submodule is used to recognize multiple front circular arc curves from the front design drawing of the similar carrier board;

[0087] A first determination submodule, used to determine a first circle center position and a first circle area corresponding to the front circular arc curve;

[0088] A first acquisition submodule is used to acquire a second center position of the carrier-like front design drawing that is in a mirror image with the first center position;

[0089] A judging submodule, used to judge whether the second circle center position includes multiple segments of reverse circular arc curves, and to judge whether the second circle area corresponding to the multiple segments of reverse circular arc curves is the same as the first circle area;

[0090] The second determination submodule is used to determine that the first circle center position is a through hole position of a similar substrate design drawing if the second circle center position includes multiple reverse arc curves and the second circle area corresponding to the multiple reverse arc curves is the same as the first circle area.

[0091] Preferably, the dry film module comprises:

[0092] The offset acquisition submodule is used to obtain the through-hole offset to the through-hole dry film pasting position;

[0093] The dry film submodule is used to calibrate the relative position of the robot arm and the first center position according to the through-hole offset, and control the robot arm to attach the through-hole dry film at the corresponding position of the copper-plated substrate.

[0094] Preferably, the offset acquisition submodule includes:

[0095] A first acquisition unit is used to acquire through-hole drilling accuracy, mechanical arm vibration accuracy, first device body vibration coefficient, and exposure offset;

[0096] The first calculation unit is used to calculate the through-hole offset of the through-hole dry film pasting position according to the through-hole drilling accuracy, the vibration accuracy of the robot arm, the vibration coefficient of the first device body, and the exposure offset.

[0097] Preferably, the dry film pattern transfer module comprises:

[0098] A second acquisition submodule is used to acquire the vibration coefficient of the second device body;

[0099] An adjusting submodule, used for adjusting etching parameters according to the vibration coefficient of the second device body to obtain specific etching parameters;

[0100] A calculation submodule, used for calculating a specific line width loss parameter according to the specific etching parameter;

[0101] The dry film pattern transfer submodule is used to adjust the size of the copper-plated substrate after the copper thickness is reduced during the dry film pattern transfer operation through the specific line width loss parameter control device, and then perform a second etching operation to obtain an SLP type carrier with fine circuits and small pad size.

[0102] Preferably, the regulating submodule comprises

[0103] The second acquisition unit is used to acquire the depth parameter, the inner wire width of the conductor, and the outer wire width of the conductor;

[0104] A second calculation unit, used for calculating the etching parameters according to the depth parameter, the inner line width of the wire, and the outer line width of the wire;

[0105] The adjusting unit is used to adjust the etching parameters through the vibration coefficient of the second device body to obtain specific etching parameters.

[0106] As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0107] For the specific definition of the SLP type substrate processing technology control device, please refer to the definition of the SLP type substrate processing technology control method mentioned above, which will not be repeated here. Each module in the above-mentioned SLP type substrate processing technology control device can be implemented in whole or in part by software, hardware and their combination. The above-mentioned modules can be embedded in or independent of the processor in the computer device in the form of hardware, or can be stored in the memory of the computer device in the form of software, so that the processor can call and execute the operations corresponding to the above modules.

[0108] The SLP type carrier board processing technology control device provided above can be used to execute the SLP type carrier board processing technology control method provided in any of the above embodiments, and has corresponding functions and beneficial effects.

[0109] In one embodiment, a computer device is provided. The computer device may be a terminal, and its internal structure diagram may be as follows: Figure 5 As shown. The computer device includes a processor, a memory, a network interface, a display screen and an input device connected through a system bus. Among them, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The network interface of the computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, a method for simulating daylighting is implemented. The display screen of the computer device can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer device can be a touch layer covering the display screen, or a button, trackball or touchpad set on the computer device housing, or an external keyboard, touchpad or mouse, etc.

[0110] Those skilled in the art will understand that Figure 5 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components.

[0111] In one embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and when the processor executes the computer program, the following steps are implemented:

[0112] Obtaining a carrier-like design drawing, and determining a through-hole position of the carrier-like design drawing;

[0113] The control device affixes a through-hole dry film at a corresponding position of the copper-plated substrate;

[0114] The control device performs a first etching operation to reduce the copper thickness on the copper-plated substrate with the through-hole dry film attached, so as to obtain the copper-plated substrate after the copper thickness is reduced;

[0115] The control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes.

[0116] Preferably, the obtaining of the carrier-like design drawing and determining the through-hole positions of the carrier-like design drawing include:

[0117] Identify multiple front circular arc curves from the front design drawing of the similar carrier board;

[0118] Determine the first circle center position and the first circle area corresponding to the front circular arc curve;

[0119] Obtaining a second circle center position of the carrier-like front design drawing that is in a mirror image position with respect to the first circle center position;

[0120] Determine whether the second circle center position includes multiple segments of reverse circular arc curves, and determine whether the second circle area corresponding to the multiple segments of reverse circular arc curves is the same as the first circle area;

[0121] If the second circle center position includes multiple reverse arc curves and the second circle area corresponding to the multiple reverse arc curves is the same as the first circle area, the first circle center position is determined to be the through hole position of the substrate-like design drawing.

[0122] Preferably, the control device applies a through-hole dry film to a corresponding position of the copper-plated substrate, comprising:

[0123] Get the through hole offset of the through hole dry film pasting position;

[0124] The relative position of the robotic arm and the first circle center position is calibrated according to the through hole offset, and the robotic arm is controlled to attach the through hole dry film at the corresponding position of the copper-plated substrate.

[0125] Preferably, the step of obtaining the through-hole offset of the through-hole dry film pasting position includes:

[0126] Obtaining through-hole drilling accuracy, robot arm vibration accuracy, first device body vibration coefficient, and exposure offset;

[0127] The through-hole offset of the position where the through-hole dry film is pasted is calculated according to the through-hole drilling accuracy, the vibration accuracy of the robot arm, the vibration coefficient of the first device body, and the exposure offset.

[0128] Preferably, the control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes, including:

[0129] Obtaining a vibration coefficient of a second device body;

[0130] Adjusting etching parameters according to the vibration coefficient of the second device body to obtain specific etching parameters;

[0131] Calculating a specific line width loss parameter according to the specific etching parameter;

[0132] The specific line width loss parameter control device is used to adjust the size of the copper-plated substrate after the copper thickness is reduced during the dry film pattern transfer operation, and then a second etching operation is performed to obtain an SLP type carrier with fine circuits and small pad size.

[0133] Preferably, the etching parameters are adjusted according to the vibration coefficient of the second device body to obtain specific etching parameters, including:

[0134] Get depth parameters, inner wire width, and outer wire width;

[0135] Calculate the etching parameters according to the depth parameter, the inner line width of the wire, and the outer line width of the wire;

[0136] The etching parameters are adjusted by the vibration coefficient of the second device body to obtain specific etching parameters.

[0137] In one embodiment, a computer-readable storage medium is provided, on which a computer program is stored, and when the computer program is executed by a processor, the following steps are implemented:

[0138] Obtaining a carrier-like design drawing, and determining a through-hole position of the carrier-like design drawing;

[0139] The control device affixes a through-hole dry film at a corresponding position of the copper-plated substrate;

[0140] The control device performs a first etching operation to reduce the copper thickness on the copper-plated substrate with the through-hole dry film attached, so as to obtain the copper-plated substrate after the copper thickness is reduced;

[0141] The control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes.

[0142] Preferably, the obtaining of the carrier-like design drawing and determining the through-hole positions of the carrier-like design drawing include:

[0143] Identify multiple front circular arc curves from the front design drawing of the similar carrier board;

[0144] Determine the first circle center position and the first circle area corresponding to the front circular arc curve;

[0145] Obtaining a second circle center position of the carrier-like front design drawing that is in a mirror image position with respect to the first circle center position;

[0146] Determine whether the second circle center position includes multiple segments of reverse circular arc curves, and determine whether the second circle area corresponding to the multiple segments of reverse circular arc curves is the same as the first circle area;

[0147] If the second circle center position includes multiple reverse arc curves and the second circle area corresponding to the multiple reverse arc curves is the same as the first circle area, the first circle center position is determined to be the through hole position of the substrate-like design drawing.

[0148] Preferably, the control device applies a through-hole dry film to a corresponding position of the copper-plated substrate, comprising:

[0149] Get the through hole offset of the through hole dry film pasting position;

[0150] The relative position of the robotic arm and the first circle center position is calibrated according to the through hole offset, and the robotic arm is controlled to attach the through hole dry film at the corresponding position of the copper-plated substrate.

[0151] Preferably, the step of obtaining the through-hole offset of the through-hole dry film pasting position includes:

[0152] Obtaining through-hole drilling accuracy, robot arm vibration accuracy, first device body vibration coefficient, and exposure offset;

[0153] The through-hole offset of the position where the through-hole dry film is pasted is calculated according to the through-hole drilling accuracy, the vibration accuracy of the robot arm, the vibration coefficient of the first device body, and the exposure offset.

[0154] Preferably, the control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes, including:

[0155] Obtaining a vibration coefficient of a second device body;

[0156] Adjusting etching parameters according to the vibration coefficient of the second device body to obtain specific etching parameters;

[0157] Calculating a specific line width loss parameter according to the specific etching parameter;

[0158] The specific line width loss parameter control device is used to adjust the size of the copper-plated substrate after the copper thickness is reduced during the dry film pattern transfer operation, and then a second etching operation is performed to obtain an SLP type carrier with fine circuits and small pad size.

[0159] Preferably, the etching parameters are adjusted according to the vibration coefficient of the second device body to obtain specific etching parameters, including:

[0160] Get depth parameters, inner wire width, and outer wire width;

[0161] Calculate the etching parameters according to the depth parameter, the inner line width of the wire, and the outer line width of the wire;

[0162] The etching parameters are adjusted by the vibration coefficient of the second device body to obtain specific etching parameters.

[0163] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory can include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0164] The various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0165] It will be appreciated by those skilled in the art that the embodiments of the present invention may be provided as methods, devices, or computer program products. Therefore, the embodiments of the present invention may take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the embodiments of the present invention may take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0166] The embodiments of the present invention are described with reference to flowcharts and / or block diagrams of apparatuses, terminal devices (systems), and computer program products according to the embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of the processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing terminal device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing terminal device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0167] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing terminal device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce a manufactured product including an instruction method, which is implemented in the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0168] These computer program instructions can also be loaded onto a computer or other programmable data processing terminal device so that a series of operating steps are executed on the computer or other programmable terminal device to produce a computer-implemented process, thereby providing instructions for executing on the computer or other programmable terminal device to implement the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0169] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the present invention.

[0170] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, device, article or terminal device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, device, article or terminal device. In the absence of further restrictions, the elements defined by the sentence "comprise a..." do not exclude the existence of other identical elements in the process, device, article or terminal device including the elements.

[0171] The above describes in detail a SLP type substrate processing technology control method and an SLP type substrate processing technology control device, a computer device and a storage medium provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A SLP type carrier processing technology control method, characterized in that: include: Obtaining a carrier-like design drawing, and determining a through-hole position of the carrier-like design drawing; The control device affixes a through-hole dry film at a corresponding position of the copper-plated substrate; The control device performs a first etching operation to reduce the copper thickness on the copper-plated substrate with the through-hole dry film attached, so as to obtain the copper-plated substrate after the copper thickness is reduced; The control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes.

2. The method according to claim 1, characterized in that The obtaining of the carrier-like design drawing and determining the through-hole position of the carrier-like design drawing includes: Identify multiple front circular arc curves from the front design drawing of the similar carrier board; Determine the first circle center position and the first circle area corresponding to the front circular arc curve; Obtaining a second circle center position of the carrier-like front design drawing that is in a mirror image position with respect to the first circle center position; Determine whether the second circle center position includes multiple segments of reverse circular arc curves, and determine whether the second circle area corresponding to the multiple segments of reverse circular arc curves is the same as the first circle area; If the second circle center position includes multiple reverse arc curves and the second circle area corresponding to the multiple reverse arc curves is the same as the first circle area, the first circle center position is determined to be the through hole position of the substrate-like design drawing.

3. The method according to claim 2, characterized in that The control device affixes a through-hole dry film at a corresponding position of the copper-plated substrate, including: Get the through hole offset of the through hole dry film pasting position; The relative position of the robotic arm and the first circle center position is calibrated according to the through hole offset, and the robotic arm is controlled to attach the through hole dry film at the corresponding position of the copper-plated substrate.

4. The method according to claim 3, characterized in that The step of obtaining the through hole offset of the through hole dry film pasting position includes: Obtaining through-hole drilling accuracy, robot arm vibration accuracy, first device body vibration coefficient, and exposure offset; The through-hole offset of the position where the through-hole dry film is pasted is calculated according to the through-hole drilling accuracy, the vibration accuracy of the robot arm, the vibration coefficient of the first device body, and the exposure offset.

5. The method according to claim 4, characterized in that The control device performs a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then performs a second etching operation to obtain an SLP type carrier board including fine circuits and small pad sizes, including: Obtaining a vibration coefficient of a second device body; Adjusting etching parameters according to the vibration coefficient of the second device body to obtain specific etching parameters; Calculating a specific line width loss parameter according to the specific etching parameter; The specific line width loss parameter control device is used to adjust the size of the copper-plated substrate after the copper thickness is reduced during the dry film pattern transfer operation, and then a second etching operation is performed to obtain an SLP type carrier with fine circuits and small pad size.

6. The method according to claim 5, characterized in that The step of adjusting the etching parameters according to the vibration coefficient of the second device body to obtain specific etching parameters includes: Get depth parameters, inner wire width, and outer wire width; Calculate the etching parameters according to the depth parameter, the inner line width of the wire, and the outer line width of the wire; The etching parameters are adjusted by the vibration coefficient of the second device body to obtain specific etching parameters.

7. A SLP type carrier processing technology control device, characterized in that: include: A through hole position determination module, used to obtain a carrier-like design drawing and determine the through hole positions of the carrier-like design drawing; A dry film module, used for controlling the device to apply a through-hole dry film to the corresponding position of the copper-plated substrate; The copper thickness reduction module is used to control the equipment to perform the first etching and copper thickness reduction operation on the copper-plated substrate with the through-hole dry film attached, so as to obtain the copper-plated substrate after the copper thickness is reduced; The dry film pattern transfer module is used to control the equipment to perform a dry film pattern transfer operation on the copper-plated substrate after the copper thickness is reduced, and then perform a second etching operation to obtain an SLP type carrier board containing fine circuits and small pad sizes.

8. The device according to claim 7, characterized in that The through hole position determination module comprises: The recognition submodule is used to recognize multiple front circular arc curves from the front design drawing of the carrier-like board; A first determination submodule, used to determine a first circle center position and a first circle area corresponding to the front circular arc curve; A first acquisition submodule is used to acquire a second center position of the carrier-like front design drawing that is in a mirror image with the first center position; A judging submodule, used to judge whether the second circle center position includes multiple segments of reverse circular arc curves, and to judge whether the second circle area corresponding to the multiple segments of reverse circular arc curves is the same as the first circle area; The second determination submodule is used to determine that the first circle center position is a through hole position of a similar substrate design drawing if the second circle center position includes multiple reverse arc curves and the second circle area corresponding to the multiple reverse arc curves is the same as the first circle area.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the SLP type carrier processing process control method described in any one of claims 1 to 6 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the SLP type carrier processing process control method described in any one of claims 1 to 6 are implemented.

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