Bearing device for grinding equipment, grinding equipment, grinding method and silicon wafer

Abstract

The embodiment of the invention provides a bearing device for grinding equipment, the grinding equipment, a grinding method and a silicon wafer, the bearing device is used for supporting the silicon wafer in the horizontal direction so that the first surface of the silicon wafer can be ground from the upper portion, and the bearing device comprises a shell; the soft part is at least partially surrounded by the shell, the soft part is arranged to be in contact with the second surface of the silicon wafer through the upper surface of the soft part so as to deform according to the shape of the second surface when the silicon wafer is ground, the first surface is opposite to the second surface, and the first surface is opposite to the second surface. According to the bearing device, uniform support can be provided for different silicon wafers in the grinding process, damage caused by stress concentration is effectively avoided, the grinding amount of different areas of the silicon wafers meets the expectation, and therefore the silicon wafers with the bending degree and the warping degree reduced and the surface quality improved are obtained.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the field of silicon wafer processing technology, and in particular to a carrier device for a grinding device, a grinding device, a grinding method, and a silicon wafer. Background Art

[0002] As the carrier of semiconductor circuit manufacturing process, the quality of silicon wafer has a decisive influence on the formation of integrated circuit. At present, the main processes in silicon wafer processing include: physical grinding, chemical grinding, chemical etching, physical polishing, chemical polishing, etc. of silicon wafers cut from single crystal silicon rods.

[0003] During the production and processing, factors such as internal stress, thermal stress or other external forces can cause deformation of silicon wafers, resulting in poor morphology of silicon wafers, such as large bow and warp of silicon wafers, where bow and warp are parameters used to describe the bending and warping of silicon wafers. Silicon wafers with large bow and warp are not only more likely to break or be damaged during processing and use, but also affect the performance and yield of the final device.

[0004] In actual production and processing, it is expected that the grinding process can eliminate or reduce the bending and warping of the silicon wafer that may occur in the previous process such as wire cutting. In the horizontal grinding process, the silicon wafer needs to be placed horizontally on the workbench so that the grinding head can evenly thin it.

[0005] However, if the silicon wafer has an uneven surface due to significant bending and warping before entering the grinding process, this will result in only a portion of the supported surface of the silicon wafer being in contact with the workbench when it is placed on a flat workbench, while the other portion is suspended in the air. In this case, the grinding operation cannot be performed while the silicon wafer is stably held, and the grinding operation is not only difficult to correct the bending and warping of the silicon wafer, but will also cause problems such as increased bending and warping of the silicon wafer, uneven thickness, reduced surface quality, and damaged internal structure. Summary of the invention

[0006] In view of this, the embodiments of the present disclosure are intended to provide a carrier device for a grinding device, a grinding device, a grinding method, and a silicon wafer. The carrier device is configured to effectively adapt to the surfaces of silicon wafers with different curvatures and warpages, provide uniform support for different silicon wafers during the grinding process, effectively avoid damage caused by stress concentration, and make the grinding amount of different areas of the silicon wafer meet expectations, thereby obtaining a silicon wafer with reduced curvature and warpage, improved thickness uniformity, and improved surface quality.

[0007] The technical solution of the embodiment of the present disclosure is implemented as follows: In a first aspect, an embodiment of the present disclosure provides a carrier device for a grinding device, the carrier device being used to support a silicon wafer in a horizontal direction so that a first surface of the silicon wafer is ground from above, wherein the carrier device comprises: case; A soft portion at least partially surrounded by the shell, the soft portion being arranged to contact the second surface of the silicon wafer through its upper surface so as to deform according to the shape of the second surface when the silicon wafer is ground, wherein the first surface is opposite to the second surface.

[0008] In some optional examples, the soft part includes an isolation layer and a filling layer, wherein: The upper surface of the isolation layer contacts the second surface of the silicon wafer, and the isolation layer and the housing enclose a sealed chamber. The sealed chamber is filled with soft material to form the filling layer.

[0009] In some optional examples, the carrier device further includes: a supply portion for providing a fluid to the upper surface of the isolation layer, and a discharge portion for discharging the fluid away from the carrier device.

[0010] In some optional examples, the supply portion includes a first injection port formed on the shell, and the discharge portion includes a first discharge port formed on the shell.

[0011] In some optional examples, the isolation layer is formed as a soft film.

[0012] In some optional examples, the soft material is a fluid.

[0013] In some optional examples, a second injection port for injecting the fluid into the sealed chamber and a second discharge port for discharging the fluid in the sealed chamber are formed on the shell.

[0014] In some optional examples, the carrying device is provided with a connection portion, and the connection portion is configured to transmit power to the carrying device so that the carrying device rotates in the horizontal direction.

[0015] In a second aspect, an embodiment of the present disclosure provides a grinding device, the grinding device comprising: A carrier device for a grinding device according to the first aspect; A grinding head is configured to grind the first surface of the silicon wafer supported by the carrier from above.

[0016] In some optional examples, the grinding equipment further includes a workbench, the carrying device is disposed on the workbench, and the workbench is configured to be able to drive the carrying device to rotate in a horizontal direction.

[0017] In some optional examples, the workbench is provided with a driving part, and the driving part is configured to be connected to the connecting part of the carrying device to drive the carrying device to rotate in the horizontal direction.

[0018] In a third aspect, an embodiment of the present disclosure provides a grinding method, the grinding method is performed by the grinding device according to the second aspect, the grinding method comprising: Supporting the silicon wafer in a horizontal direction by a supporting device of the grinding equipment; Grinding the first surface of the silicon wafer from above by a grinding head of the grinding device; Among them, supporting the silicon wafer in a horizontal direction by the supporting device of the grinding equipment includes: making the second surface of the silicon wafer opposite to the first surface contact with the upper surface of the soft part of the supporting device, so that the soft part can be deformed according to the shape of the second surface when the silicon wafer is ground.

[0019] In a fourth aspect, an embodiment of the present disclosure provides a silicon wafer, which is manufactured by using the grinding method according to the third aspect, wherein the curvature and warpage of the silicon wafer are respectively less than 20 microns, and the total thickness deviation of the silicon wafer is less than 1.5 microns.

[0020] Embodiments of the present disclosure provide a bearing device, a grinding device, a grinding method and a silicon wafer for a grinding device. The bearing device is used to support the silicon wafer in a horizontal direction so that the first surface of the silicon wafer is ground from above. The bearing device is provided with a shell and a soft part at least partially surrounded by the shell, and the soft part is configured to deform according to the actual shape of the second surface of the silicon wafer when in contact with the second surface of the silicon wafer and subjected to the pressure of the silicon wafer, so as to expand the contact area with the second surface as much as possible. Thus, by compensating the unevenness of the silicon wafer through the deformation ability of the soft part, it can be ensured that the bearing device supports the silicon wafer more comprehensively, evenly and stably during the grinding process, so as to improve the stability of the grinding operation, so that the curvature and warpage, total thickness change, surface quality and other aspects of the ground silicon wafer are significantly improved, and the deformation aggravation and internal damage of the silicon wafer caused by uneven pressure distribution during the grinding process are reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic diagram of a conventional grinding device; Figure 2 A schematic diagram of a grinding device provided in an embodiment of the present disclosure; Figure 3 for Figure 2 A top view of a portion of a grinding device; Figure 4 A schematic diagram of a carrying device provided in an embodiment of the present disclosure; Figure 5 A schematic diagram of a carrying device provided for another embodiment of the present disclosure; Figure 6 A schematic diagram of a carrying device provided for yet another embodiment of the present disclosure; Figure 7 A schematic diagram of a carrying device provided in yet another embodiment of the present disclosure; Figure 8 A schematic diagram of a grinding device provided for another embodiment of the present disclosure; Fig. 9 A flow chart of a grinding method provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure.

[0023] See also Figure 1 , which shows a schematic diagram of a conventional grinding device. The grinding device 1 mainly includes a workbench 11 and a grinding head 12. The workbench 11 can be used to ensure that the silicon wafer W is stably held during the grinding process. The grinding head 12 can be used to grind the surface of the silicon wafer W held on the workbench 11.

[0024] The workbench 11 may have a horizontal bearing surface 111 for horizontally bearing the silicon wafer W. The workbench 11 may hold the silicon wafer W by vacuum adsorption during the grinding process, for example, to prevent the silicon wafer from being displaced by the grinding head 12 .

[0025] The grinding head 12 may include a grinding portion 121, a pressurizing portion 122, and a driving portion 123. The grinding portion 121 may be used to directly grind the surface of the material. The pressurizing portion 122 may be used to apply pressure to the silicon wafer W through the grinding portion 121. The driving portion 123 may be used to drive the grinding head 12 to move in a vertical direction and rotate around its own rotation axis.

[0026] When the silicon wafer is ground using the grinding device 1, the first surface of the silicon wafer can be ground using the grinding head 12 first. In this process, the silicon wafer contacts the bearing surface 111 of the workbench 11 through the second surface opposite to the first surface so that it can be supported by the workbench 11. After this grinding operation is completed, the silicon wafer can be turned over, and the second surface of the silicon wafer can be ground while the silicon wafer is supported by the workbench through the first surface. Alternatively, the grinding order can be changed, that is, the first surface can be ground after the second surface is ground. It should be noted that in each embodiment of the present disclosure, the surface of the silicon wafer refers to: the surface of the silicon wafer used to form a semiconductor device and the surface opposite to the surface. In the art, these two surfaces may also be referred to as the front and back of the silicon wafer, respectively.

[0027] In the art, it is expected that the morphological defects of silicon wafers caused by the previous process can be eliminated or reduced by grinding operations, such as reducing the curvature and warpage of silicon wafers, improving the thickness uniformity of silicon wafers, improving surface quality, etc. However, in actual production, the morphology of silicon wafers after grinding often still does not meet the requirements.

[0028] In view of the above problems, the inventors have found that, for the existing grinding equipment 1, the bearing surface 111 of the workbench 11 is a flat surface, but the silicon wafer to be processed is non-flat due to the presence of morphological defects, especially having two uneven surfaces. When the uneven silicon wafer is placed on the flat bearing surface 111 of the workbench 11, the bearing surface of the silicon wafer is only partially in contact with the bearing surface 111. In fact, only the high points on the surface of the silicon wafer can contact the bearing surface 111 and form a support point, while the low point area is suspended or has poor contact with the bearing surface 111, such as Figure 1 shown.

[0029] After further research, the inventors noticed that the above situation will cause many problems in the subsequent processing of silicon wafers. Specifically, during the grinding process, due to the uneven contact between the silicon wafer and the bearing surface of the workbench, not only may the silicon wafer shake when contacting the grinding head, causing the grinding operation to be unable to be carried out stably, but also cause the high point area to be subjected to excessive pressure, while the low point area is insufficient. Excessive pressure in local areas will cause stress concentration in these areas, which will cause damage to the internal structure of the silicon wafer in these areas, such as lattice deformation. When the stress exceeds the intrinsic strength of the silicon wafer material, cracks may form in the pressure concentration area. In severe cases, the cracks will further extend to other parts of the silicon wafer, especially the edges or weak areas with small defects, causing local breakage of the silicon wafer. In addition, when the bent or warped silicon wafer is deformed to be flat after being subjected to the pressure of the grinding head, the low point area that was originally not in contact with the grinding head may be pushed to the grinding head, causing the low point area to be ground beyond expectations. Moreover, the unstable support of the silicon wafer also directly leads to the instability of the grinding operation, making the specific grinding position of the grinding head on the silicon wafer surface uncertain. These factors result in uneven overall thickness and poor surface quality of the ground silicon wafer, and may even introduce new or aggravate existing bends and warps, such as introducing new bends and warps in the edge region of the silicon wafer.

[0030] In view of the above situation, the embodiments of the present disclosure are expected to provide a carrier device for a grinding device, a grinding device, a grinding method and a silicon wafer. The carrier device is configured to effectively adapt to the surfaces of silicon wafers with different curvatures and warpages, and provide comprehensive and uniform support for different silicon wafers during the grinding process to improve the stability of the grinding operation, and make the grinding amount of different areas of the silicon wafer meet expectations, so as to obtain a silicon wafer with reduced curvature and warpage, uniform thickness and improved surface quality, and effectively avoid silicon wafer damage caused by stress concentration.

[0031] The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0032] See also Figure 2 Some embodiments of the present disclosure provide a carrier device 13 for a grinding device. The carrier device 13 is used to support a silicon wafer W in a horizontal direction so that a first surface S1 of the silicon wafer W is ground from above.

[0033] The carrier 13 may include a shell 131 and a soft portion 132 at least partially surrounded by the shell 131. The soft portion 132 may be configured to contact the second surface S2 of the silicon wafer W through its upper surface so as to deform according to the shape of the second surface S2 when the silicon wafer W is ground, and the first surface S1 is opposite to the second surface S2.

[0034] Specifically, the carrier 13 can be configured to hold the silicon wafer W approximately in a horizontal direction and expose the first surface S1 or the second surface S2 upward, so as to grind the exposed first surface S1 or the second surface S2 from above without interfering with the grinding operation.

[0035] In some embodiments of the present disclosure, Figure 2 and Figure 3 As shown in FIG. 1 , the housing 131 of the carrier 13 can be configured to be roughly annular to restrict the silicon wafer W from the outer periphery of the silicon wafer W, thereby preventing the silicon wafer W from being displaced horizontally relative to the carrier 13. The housing 131 can be made of, for example, metal or hard plastic. In order to prevent the silicon wafer W from rotating in the same direction as the grinding head during the grinding process and thus affecting the grinding efficiency, as shown in FIG. Figure 3 As shown, the carrier 13 may be further provided with an anti-rotation portion 133. The anti-rotation portion 133 may be configured to be matched with the notch on the silicon wafer W, thereby preventing the silicon wafer W from rotating around its center relative to the carrier 13. It should be noted that the carrier 13 may also limit the rotation of the silicon wafer W relative to it in other ways, which are not limited here.

[0036] In the case where the housing 131 is formed into a substantially annular shape, the housing 131 may be arranged around the soft portion 132 in the circumferential direction. The soft portion 132 may be connected to the workbench 11 or not, and the present disclosure does not limit this. The soft portion 132 may be made of a soft material, such as rubber, silicone or other materials having deformation ability and shape memory properties, so as to allow the soft portion 132 to deform according to the contacted silicon wafer surface when the silicon wafer is ground. The carrier 13 may contact one surface of the silicon wafer W via the soft portion 132, so the surface of the soft portion 132 for contacting the silicon wafer W may have a shape corresponding to the first surface S1 or the second surface S2 of the silicon wafer W. In order to ensure that the soft portion 132 fully supports the silicon wafer W, the surface of the soft portion 132 for contacting the silicon wafer W has an area greater than the first surface S1 or the second surface S2 of the silicon wafer W.

[0037] like Figure 2 As shown in , the silicon wafer W can be placed on the soft portion 132 in a substantially horizontal direction so that the soft portion 132 contacts the second surface S2 of the silicon wafer W. Once the silicon wafer W is placed on the soft portion 132, the soft portion 132 can be deformed under the gravity of the silicon wafer W. The soft portion 132 can increase the contact area with the second surface S2 of the silicon wafer W through the deformation. In this case, the soft portion 132 is not only in contact with the high points on the second surface S2 of the silicon wafer W, but can also be in contact with other areas on the second surface S2, even low point areas.

[0038] During the grinding process, the grinding head grinds the first surface S1 of the silicon wafer W while applying pressure to the first surface S1 of the silicon wafer W. The pressure on the silicon wafer W can be directly transmitted to the soft portion 132. The soft portion 132 is further deformed under the dual effects of the pressure and the gravity of the silicon wafer W itself, thereby further expanding the contact area between the silicon wafer W and the soft portion 132.

[0039] The material and size of the soft portion 132 can be determined according to the specifications of the silicon wafer and the grinding process parameters, such as the pressure applied by the grinding head to the silicon wafer during grinding. The soft portion 132 can be designed to not only deform according to the pressure and the shape of the silicon wafer to increase the contact area with the silicon wafer, especially to fill the low point area, but also have sufficient rigidity after deformation to provide necessary support for the silicon wafer, that is, in terms of mechanical properties, it can withstand continuous grinding operations without being completely deformed, thereby ensuring the flatness and stability of the silicon wafer during the grinding process.

[0040] When the deformed soft part 132 fully and evenly supports the second surface S2 of the silicon wafer W, the grinding head can remove the material of the first surface S1 of the silicon wafer W in a top-to-bottom order, so that the uneven first surface S1 gradually tends to be flat, until the grinding amount of the first surface S1 reaches a preset value, wherein the grinding amount can be set according to the thickness requirements of the final product and the morphology of the silicon wafer before grinding. Since the soft part 132 always maintains stable support for the silicon wafer W during this process, and the shell 131 restricts the silicon wafer W, the silicon wafer W will not be deformed or displaced. This avoids the silicon wafer from being damaged by stress concentration, so that the removal amount of each area by the grinding head meets expectations, and there will be no excessive grinding of the high point area or excessive grinding of the low point area. In view of this, the curvature and warpage of the ground silicon wafer are reduced, and the overall thickness is more uniform. Moreover, the grinding operation is performed under the above-mentioned stable condition, so that the surface of the silicon wafer is evenly ground, so that the surface quality is improved. The embodiment of the present disclosure provides a carrier 13 for a grinding device. The carrier 13 is used to support the silicon wafer W in the horizontal direction so that the first surface of the silicon wafer W is ground from above. The carrier 13 is provided with a shell 131 and a soft part 132 at least partially surrounded by the shell 131. The soft part 132 is configured to deform according to the actual shape of the second surface S2 of the silicon wafer W when in contact with the second surface S2 of the silicon wafer W and subjected to the pressure of the silicon wafer W, so as to expand the contact area with the second surface S2 as much as possible. Thus, by compensating the unevenness of the silicon wafer W through the deformation ability of the soft part 132, it can be ensured that the carrier 13 supports the silicon wafer W more comprehensively, evenly and stably during the grinding process, so as to improve the stability of the grinding operation, so that the curvature and warpage, total thickness change, surface quality and other aspects of the ground silicon wafer W are significantly improved, and the deformation aggravation and internal damage of the silicon wafer caused by uneven pressure distribution during the grinding process are reduced.

[0041] In addition to using a single material, the soft portion 132 can also be a composite structure composed of multiple materials. In this regard, in some embodiments of the present disclosure, In some embodiments of the present disclosure, see Figure 4 The soft part 132 may include an isolation layer 132a and a filling layer 132b, wherein the upper surface of the isolation layer 132a contacts the second surface S2 of the silicon wafer W, and the isolation layer 132a and the shell 131 enclose a sealed chamber 131a, and the sealed chamber 131a is filled with soft material to form a filling layer 132b.

[0042] and Figure 2 and Figure 3 Unlike the embodiment shown in Figure 4In the illustrated embodiment, the housing 131 includes a bottom portion and a circumferential portion extending around the outer peripheral edge of the bottom portion, that is, compared to Figure 2 and Figure 3 The ring-shaped part in the embodiment also has a bottom.

[0043] The isolation layer 132a may be connected to the inner wall of the circumferential portion of the housing 131 in a sealed manner, and the bottom and circumferential portion of the housing 131 may be formed integrally, thereby defining a sealed chamber 131a together with the circumferential portion and the bottom of the housing 131. In other embodiments of the present disclosure, the bottom and circumferential portion of the housing 131 may be formed separately and connected together in a sealed manner. The present disclosure does not limit this.

[0044] The isolation layer 132a is a part of the soft part, and is used to directly contact the second surface S2 of the silicon wafer. Therefore, the isolation layer 132a can have good deformation ability to adapt to the irregularity of the second surface S2. In some embodiments of the present disclosure, the isolation layer 132a is formed as a soft film.

[0045] In order to achieve the above functions, the material of the isolation layer can be selected to have compressibility and resilience, such as rubber, silicone or polyurethane, so as to provide necessary deformation during the silicon wafer grinding process.

[0046] The filling layer 132b may be made of a soft material to provide support and ensure that the silicon wafer is subjected to uniform pressure during the grinding process. In some embodiments of the present disclosure, the soft material may be a fluid.

[0047] Specifically, the soft material of the filling layer can be a liquid such as deionized water, hydraulic oil, silicone oil, etc., or a gas such as air, nitrogen, and argon. Among them, liquid filling materials can provide better pressure control and uniformity, while gas filling materials are easier to control and maintain.

[0048] The inventors have also found through research that the silicon wafer may still have impurities attached to the surface before grinding, for example, the cutting fluid remaining on the surface of the silicon wafer after the wire cutting operation, environmental impurities attached to the surface of the silicon wafer during the transfer from the wire cutting station to the grinding station, etc. In addition, during the grinding process, the removed silicon wafer portion may also be scattered in the surrounding environment in the form of particles, and eventually at least partially attached to the supported surface of the silicon wafer. If these impurities or particles are not cleaned, they may damage the supported surface of the silicon wafer through the supporting force of the soft part during the grinding operation.

[0049] In order to clean the silicon wafers in time, in some embodiments of the present disclosure, the carrier 13 may further include: a supply portion 131b for providing fluid to the upper surface of the isolation layer, and a discharge portion 131c for discharging the fluid away from the carrier.

[0050] The supply part 131b and the discharge part 131c can be arranged to be respectively connected to the space fluid formed by the circumferential part of the housing 131 of the carrier 13 and the upper surface of the isolation layer 132a. The fluid provided by the supply part 131b can clean the second surface S2 of the silicon wafer and the upper surface of the isolation layer 132a, and the contaminated fluid after cleaning can be discharged from the carrier 13 in time through the discharge part 131c to avoid secondary contamination. The supply part 131b and the discharge part 131c can be used during the grinding operation, or before or after the grinding operation, to clean the carrier 13 in advance or finally.

[0051] In some embodiments of the present disclosure, see Figure 5 , the supply portion 131 b may include a first injection port 131 d formed on the housing 131 , and the discharge portion 131 c may include a first discharge port 131 e formed on the housing 131 .

[0052] The first injection port 131d and the first discharge port 131e may be disposed on the circumferential portion of the housing 131 and open toward the inner side of the housing 131. The first injection port 131d and the first discharge port 131e are located above the isolation layer 132a in the vertical direction. A plurality of first injection ports and a plurality of first discharge ports may be provided, and the first injection ports and the first discharge ports may be disposed oppositely to form a fluid flow path from the first injection port through the isolation layer 132a to the first discharge port. In some embodiments of the present disclosure, the first injection port 131d and the first discharge port 131e are disposed close to the upper surface of the isolation layer 132a to increase the fluid flow rate, thereby improving the cleaning efficiency.

[0053] The selection of soft material, density and volume ratio of the sealed chamber 131a can be determined according to the grinding process parameters, the morphology of the silicon wafer before grinding and the index requirements after grinding, and can be different for different application scenarios. In order to more accurately match the application scenario and make the carrier 13 more versatile, in some embodiments of the present disclosure, see Figure 6 When the soft material is a fluid, the housing 131 is formed with a second injection port 131 f for injecting the fluid into the sealed chamber 131 a and a second discharge port 131 g for discharging the fluid in the sealed chamber 131 a .

[0054] The second injection port 131f and the second discharge port 131g may be provided on the circumferential portion of the housing 131 and open toward the inner side of the housing 131. The second injection port 131f and the second discharge port 131g are located below the isolation layer 132a in the vertical direction. A plurality of second injection ports and a plurality of second discharge ports may be provided, and the second injection port and the second discharge port may be provided opposite to each other to form a fluid flow path from the second injection port through the sealed chamber to the second discharge port.

[0055] By adjusting the amount of fluid filled in the sealed chamber through the second injection port 131f and the second discharge port 131g, the deformation capacity of the entire soft part can be changed to deform silicon wafers with different morphologies and provide appropriate support force for different grinding parameters.

[0056] In order to improve the grinding efficiency and grinding uniformity, during the grinding process, the carrier 13 can be rotated to drive the silicon wafer W to rotate. In this regard, in some embodiments of the present disclosure, see Figure 7 The carrying device 13 may be provided with a connecting portion 131h, and the connecting portion 131h may be configured to transmit power to the carrying device 13 so that the carrying device 13 rotates in a horizontal direction.

[0057] exist Figure 7 In the embodiment shown in FIG. 1 , the connecting portion 131h is formed as a through hole provided in the housing 131. It is understandable that this is only one implementation form of the connecting portion. In other embodiments not shown, the connecting portion 131h can be implemented in other forms as long as it can be matched with the device providing power for transmission.

[0058] See also Figure 2 Some embodiments of the present disclosure further provide a grinding device 1. The grinding device 1 may include: a carrier device 13 for grinding the device described above; and a grinding head 12, which is configured to grind the first surface S1 of the silicon wafer S supported by the carrier device 13 from above.

[0059] In order to realize the rotation of the silicon wafer during the grinding process, in some other embodiments of the present disclosure, see Figure 8 The grinding device 1 may also include a workbench 11, and a carrying device 13 may be arranged on the workbench 11. The workbench 11 may be configured to drive the carrying device 13 to rotate in a horizontal direction to drive the silicon wafer to rotate in a horizontal direction, wherein the rotation direction of the silicon wafer and the rotation direction of the grinding head may be opposite, and the rotation speeds of the two may be the same or different, which is not limited in the present disclosure.

[0060] In order to realize the driving of the carrying device 13 by the workbench 11, in other embodiments of the present disclosure, see Figure 8The workbench 11 may be provided with a driving portion 112, and the driving portion 112 is configured to be connected to the connecting portion 131h of the carrying device 13 to drive the carrying device 13 to rotate in the horizontal direction.

[0061] like Figure 8 The driving part 112 shown includes a base 112a and a driving member 112b fixedly connected to the base. The base 112a can be connected to a power source, such as an electric motor (not shown in the figure), so as to rotate under the driving action of the power source. The driving member 112b can be connected with the connecting portion 131h of the carrying device 13 to transmit the power provided by the power source to the carrying device 13. In the embodiment shown in the figure, the driving member 112b is formed as a pin, and the connecting portion 131h is formed as a hole, and the two can be a gap or a transition fit. The driving part 112 can also be formed in other forms, and accordingly, the connecting portion 131h of the carrying device 13 can also be formed in other forms, as long as it can transmit power to realize the rotation of the carrying device 13, and the present disclosure does not limit this.

[0062] The present disclosure also provides a grinding method, see Fig. 9 The grinding method is performed by the grinding device 1 described above, and the grinding method comprises: S01, supporting the silicon wafer W in a horizontal direction by the carrier 13 of the grinding device 1; S02, grinding the first surface S1 of the silicon wafer W from above by the grinding head 12 of the grinding device 1; Among them, the supporting device 13 of the grinding equipment 1 supports the silicon wafer W in the horizontal direction, including: making the second surface S2 of the silicon wafer W opposite to the first surface S1 contact with the upper surface of the soft part 132 of the supporting device 13, so that the soft part 132 can be deformed according to the shape of the second surface S2 when the silicon wafer W is ground.

[0063] In some embodiments of the present disclosure, the following silicon wafers can be obtained by using the above-mentioned grinding method provided by the embodiments of the present disclosure: the curvature and warpage of the silicon wafer are respectively less than 20 microns, the total thickness deviation (Total Thickness Variation, TTV) is less than 1.5 microns, and there are no pits or protrusions on the surface of the silicon wafer caused by grinding. The changes in the curvature (Bow) and warp (Warp) and the total thickness deviation (TTV) values ​​of the silicon wafer before grinding and after grinding using the above-mentioned grinding method provided by the embodiments of the present disclosure are shown in Table 1.

[0064] Table 1

[0065] It should be noted that the technical solutions described in the embodiments of the present disclosure can be combined arbitrarily without conflict.

[0066] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A carrying device for a grinding device, characterized in that: The carrier is used to support the silicon wafer in a horizontal direction so that the first surface of the silicon wafer is ground from above, wherein the carrier comprises: case; A soft portion at least partially surrounded by the shell, the soft portion being arranged to contact the second surface of the silicon wafer through its upper surface so as to deform according to the shape of the second surface when the silicon wafer is ground, wherein the first surface is opposite to the second surface.

2. The carrying device for grinding equipment according to claim 1, characterized in that: The soft part includes an isolation layer and a filling layer, wherein: The upper surface of the isolation layer contacts the second surface of the silicon wafer, and the isolation layer and the housing enclose a sealed chamber. The sealed chamber is filled with soft material to form the filling layer.

3. The carrying device for grinding equipment according to claim 2, characterized in that: The carrier device further comprises: a supply portion for providing a fluid to the upper surface of the isolation layer, and a discharge portion for discharging the fluid away from the carrier device.

4. The carrying device for grinding equipment according to claim 3, characterized in that: The supply portion includes a first injection port formed on the housing, and the discharge portion includes a first discharge port formed on the housing.

5. The carrying device for grinding equipment according to claim 2, characterized in that: The isolation layer is formed as a soft film.

6. The carrying device for grinding equipment according to any one of claims 2 to 5, characterized in that: The soft material is a fluid.

7. The carrying device for grinding equipment according to claim 6, characterized in that: The housing is formed with a second injection port for injecting the fluid into the sealed chamber and a second discharge port for discharging the fluid in the sealed chamber.

8. The carrying device for grinding equipment according to any one of claims 1 to 5, characterized in that: The carrying device is provided with a connecting portion, and the connecting portion is configured to transmit power to the carrying device so as to rotate the carrying device in the horizontal direction.

9. A grinding device, characterized in that: The grinding equipment comprises: A carrier device for a grinding device according to any one of claims 1 to 8; A grinding head is configured to grind the first surface of the silicon wafer supported by the carrier from above.

10. The grinding device according to claim 9, characterized in that The grinding equipment further comprises a workbench, the carrying device is arranged on the workbench, and the workbench is arranged to be able to drive the carrying device to rotate in a horizontal direction.

11. The grinding device according to claim 10, characterized in that The workbench is provided with a driving part, and the driving part is configured to be connected to the connecting part of the carrying device to drive the carrying device to rotate in the horizontal direction.

12. A grinding method, characterized in that: The grinding method is performed by the grinding device according to any one of claims 9 to 11, and the grinding method comprises: Supporting the silicon wafer in a horizontal direction by a supporting device of the grinding equipment; Grinding the first surface of the silicon wafer from above by using a grinding head of the grinding device; Among them, supporting the silicon wafer in a horizontal direction by the supporting device of the grinding equipment includes: making the second surface of the silicon wafer opposite to the first surface contact with the upper surface of the soft part of the supporting device, so that the soft part can be deformed according to the shape of the second surface when the silicon wafer is ground.

13. A silicon wafer, characterized in that: The silicon wafer is manufactured by using the grinding method according to claim 12, wherein the curvature and the warpage of the silicon wafer are respectively less than 20 micrometers, and the total thickness deviation of the silicon wafer is less than 1.5 micrometers.

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