Preparation method of test carrier, test carrier and test method of micro light emitting diode

Abstract

The present disclosure provides a method for preparing a test carrier, a test carrier and a method for testing a micro-LED, the preparation method comprising: preparing a non-conductive substrate; punching holes in the substrate according to the size information of the micro-LED, and filling a conductive material into a plurality of holes of the substrate to obtain conductive holes; thinning a local area around the conductive holes on the substrate until the height of the local area is lower than the height of the conductive material; preparing a passivation protective layer on the thinned substrate, and removing the local area on the passivation protective layer that covers the conductive holes to obtain a test carrier, wherein one side of the conductive hole of the test carrier is used to contact with the probe of the test machine, and the other side is used to contact with the electrode of the micro-LED. Testing the micro-LED using the test carrier prepared by the present disclosure can avoid direct contact between the probe and the electrode of the micro-LED, alleviating the problem of damage to the electrode by the probe.

Description

Technical Field

[0001] The present disclosure relates to the technical field of light-emitting diodes, and in particular to a method for preparing a test carrier, and a method for testing the test carrier and a micro light-emitting diode. Background Art

[0002] With the gradual development of display technology, Micro Light Emitting Diode (MicroLED) is used more and more. Micro LED is a miniaturized LED with a size ranging from 1um to 100um. Compared with organic display light-emitting devices, Micro LED has the advantages of high luminous efficiency and high brightness.

[0003] Generally, Micro LEDs need to undergo electrical testing to detect their luminous performance and whether they have defects such as leakage and short circuit. Electroluminescence (EL) testing tests Micro LEDs by applying current to them to determine LED defects. However, during the test, the probes on the EL test machine directly contact the P and N electrodes of the LED chip, and the probes will damage the electrode surface. After the test is completed, the damage to the electrode surface cannot be repaired. Summary of the invention

[0004] The embodiments of the present disclosure at least provide a method for preparing a test carrier, and a method for testing the test carrier and a micro light emitting diode.

[0005] In a first aspect, an embodiment of the present disclosure provides a method for preparing a test carrier, comprising:

[0006] preparing a non-conductive substrate;

[0007] According to the size information of the micro-LED, the substrate is punched, and a conductive material is filled into a plurality of holes of the substrate to obtain conductive holes;

[0008] Thinning a local area around the conductive hole on the substrate until the height of the local area is lower than the height of the conductive material;

[0009] A passivation protective layer is prepared on the thinned substrate, and a local area of ​​the passivation protective layer covering the conductive hole is removed to obtain a test carrier, wherein one side of the conductive hole of the test carrier is used to contact the probe of the test machine, and the other side is used to contact the electrode of the micro-light-emitting diode.

[0010] In an optional implementation, after the conductive holes are generated, the method further includes: polishing the conductive holes.

[0011] In a second aspect, the present disclosure also provides a method for preparing a test carrier, comprising:

[0012] preparing a non-conductive substrate;

[0013] Punching holes in the substrate according to the size information of the micro light emitting diodes;

[0014] A conductive material is filled into a plurality of holes of a substrate, and the conductive material is controlled to solidify according to a set target temperature to obtain a test carrier provided with conductive holes, wherein the conductive material is a sticky conductive material, and one side of the conductive hole of the test carrier is used for contacting with a probe of a test machine, and the other side is used for contacting with an electrode of the micro-LED chip.

[0015] In an optional embodiment, the target temperature is lower than 100 degrees Celsius.

[0016] In a third aspect, the embodiments of the present disclosure further provide a test carrier, comprising: a substrate, and a plurality of conductive holes arranged on the substrate, the conductive holes being filled with a conductive material, and a passivation protective layer being arranged in a local substrate area around the conductive holes, wherein the positions and sizes of the plurality of conductive holes are determined according to the size information of the micro light-emitting diodes.

[0017] In an optional implementation, the thickness of the substrate ranges from greater than or equal to 0.5 mm to less than or equal to 1 mm.

[0018] In an optional implementation, the height of the passivation protection layer on the test carrier is higher than the height of the conductive material in the conductive hole and lower than the height of the substrate.

[0019] In an optional implementation, the height difference between the height of the passivation protection layer on the test carrier and the height of the conductive material in the conductive hole is smaller than the electrode height of the micro light emitting diode.

[0020] In a fourth aspect, an embodiment of the present disclosure further provides a test carrier, comprising: a substrate, and a plurality of conductive holes arranged on the substrate, wherein the conductive holes are filled with a viscous conductive material.

[0021] In a fifth aspect, the present disclosure also provides a method for testing a micro light emitting diode, including:

[0022] Aligning a plurality of probes of an electrical testing machine with a plurality of conductive holes of a test carrier; wherein the test carrier is the test carrier described in the third aspect or any one of the embodiments, or the test carrier described in the fourth aspect;

[0023] Placing the micro light emitting diode to be tested on the test carrier, with the P electrode and the N electrode of the micro light emitting diode respectively contacting the plurality of conductive holes of the test carrier;

[0024] After the electrical testing machine is powered on and the micro light emitting diode is powered by the plurality of probes, test data of the micro light emitting diode is collected, and the performance of the micro light emitting diode is determined according to the test data.

[0025] It should be understood that the above general description and the following detailed description are merely exemplary and explanatory, and are not intended to limit the technical solutions of the present disclosure.

[0026] The present disclosure provides a method for preparing a test carrier, a test carrier and a test method for a micro-light emitting diode. The preparation method comprises the following steps: preparing a non-conductive substrate; punching holes in the substrate according to the size information of the micro-light emitting diode, and filling a conductive material into a plurality of holes of the substrate to obtain a conductive hole; thinning a local area around the conductive hole on the substrate until the height of the local area is lower than the height of the conductive material; preparing a passivation protective layer on the thinned substrate, and removing a local area on the passivation protective layer covering the conductive hole to obtain a test carrier, wherein one side of the conductive hole of the test carrier is used to contact with a probe of a test machine, and the other side is used to contact with an electrode of a micro-light emitting diode chip. The test carrier is used to implement an EL test on the micro-light emitting diode, which can avoid direct contact between the probe and the electrode of the micro-light emitting diode, and alleviate the problem of damage to the electrode by the probe. The test carrier of the present disclosure is provided with a passivation protective layer, which can fix the micro-light emitting diode during the test process, and can alleviate the influence of static electricity generated during the test process on the EL test, thereby ensuring the accuracy of the EL test.

[0027] In order to make the above-mentioned objectives, features and advantages of the present disclosure more obvious and easy to understand, preferred embodiments are specifically cited below and described in detail with reference to the attached drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following is a brief introduction to the drawings required for use in the embodiments. The drawings herein are incorporated into the specification and constitute a part of the specification. These drawings illustrate embodiments consistent with the present disclosure and are used together with the specification to illustrate the technical solutions of the present disclosure. It should be understood that the following drawings only illustrate certain embodiments of the present disclosure and should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can also be obtained based on these drawings without creative work.

[0029] Figure 1 A flow chart showing a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0030] Figure 2 A schematic diagram of a micro light emitting diode in a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0031] Figure 3a A schematic diagram of a substrate in a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0032] Figure 3b A schematic diagram of a substrate after punching in a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0033] Figure 3c A schematic diagram of a substrate including a conductive hole in a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0034] Figure 3d A schematic diagram of a thinned substrate in a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0035] Figure 3e A schematic diagram of a passivation protection layer in a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0036] Figure 3f A schematic diagram of a test carrier in a method for preparing a test carrier provided in some embodiments of the present disclosure is shown;

[0037] Figure 4 A flow chart showing a method for preparing a test carrier provided in other embodiments of the present disclosure is shown;

[0038] Figure 5a A schematic diagram of a substrate in a method for preparing a test carrier provided in other embodiments of the present disclosure is shown;

[0039] Figure 5b A schematic diagram of a substrate after being punched in a method for preparing a test carrier provided in other embodiments of the present disclosure is shown;

[0040] Figure 5c A schematic diagram of a test carrier in a method for preparing a test carrier provided in other embodiments of the present disclosure is shown;

[0041] Figure 6 A schematic diagram of a test carrier provided by some embodiments of the present disclosure is shown;

[0042] Figure 7 Schematic diagrams of test carriers provided in other embodiments of the present disclosure are shown;

[0043] Figure 8A flow chart showing a method for testing a micro light emitting diode provided by some embodiments of the present disclosure is shown;

[0044] Fig. 9 A schematic diagram showing the relationship between a test carrier, an electrical testing machine and a micro light emitting diode in a test method for a micro light emitting diode provided in some embodiments of the present disclosure is shown. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical scheme and advantages of the embodiments of the present disclosure clearer, the technical scheme in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments. The components of the embodiments of the present disclosure generally described and shown here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present disclosure is not intended to limit the scope of the present disclosure claimed for protection, but merely represents the selected embodiments of the present disclosure. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present disclosure.

[0046] Micro LEDs need to be tested for electrical properties to check their luminous performance and whether they have defects such as leakage and short circuit. EL testing tests Micro LEDs by applying current to them to determine LED defects. During the test, the probes on the EL test machine directly contact the P and N electrodes of the LED chip, and the probes will damage the electrode surface. After the test is completed, the damage to the electrode surface cannot be repaired.

[0047] Based on the above research, the present disclosure provides a method for preparing a test carrier, which comprises preparing a non-conductive substrate; punching the substrate according to the size information of the micro-LED, and filling the conductive material into the multiple holes of the substrate to obtain conductive holes; thinning the local area around the conductive holes on the substrate until the height of the local area is lower than the height of the conductive material; preparing a passivation protective layer on the thinned substrate, and removing the local area covering the conductive holes on the passivation protective layer to obtain a test carrier, wherein one side of the conductive hole of the test carrier is used to contact with the probe of the test machine, and the other side is used to contact with the electrode of the micro-LED chip. The EL test of the micro-LED is realized by using the test carrier, which can avoid direct contact between the probe and the electrode of the micro-LED, and alleviate the problem of damage to the electrode by the probe. In addition, the test carrier of the present disclosure is provided with a passivation protective layer, which can fix the micro-LED during the test and alleviate the influence of static electricity generated during the test on the EL test, thereby ensuring the accuracy of the EL test.

[0048] The above contents are all the results obtained by the inventor after practice and careful research. Therefore, the process of discovering the above problems and the solutions proposed by the present disclosure for the above problems below should be the contributions made by the inventor to the present disclosure during the disclosure process.

[0049] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0050] See also Figure 1 FIG. 1 is a flow chart of a method for preparing a test carrier provided by an embodiment of the present disclosure, wherein the method comprises steps S101 to S104, wherein:

[0051] S101. Prepare a non-conductive substrate.

[0052] The material of the substrate may be glass, sapphire, polyimide (PI), polyethylene terephthalate (PET), etc.

[0053] The substrate may have a thickness ranging from 0.5 mm to 1 mm, including the thickness range of 0.5 mm and 1 mm.

[0054] S102 , punching holes in the substrate according to the size information of the micro light emitting diodes, and filling the plurality of holes of the substrate with conductive material to obtain conductive holes.

[0055] See also Figure 2 As shown, the size information of the micro light emitting diode may include but is not limited to: the interval width w1 between the P electrode and the N electrode, the electrode width w2 of the P electrode (or the N electrode) and the electrode height h, etc.

[0056] During implementation, a laser may be used to punch holes in the substrate, wherein the selection of the laser may be determined according to the material and thickness of the substrate. For example, the laser may be an ultraviolet laser of about 10W and 355nm, or a green light of about 10-30W and 532nm, or a red light of less than 100W and 1064nm.

[0057] After drilling, a plurality of holes are filled with conductive materials to obtain conductive holes, wherein the conductive materials can be selected as needed, for example, the conductive materials can be nanosilver, conductive gel, conductive carbon fiber, etc. The filling height of the conductive material in the conductive holes is lower than the thickness of the substrate, that is, the filled conductive material does not exceed the depth of the hole.

[0058] Optionally, after generating the conductive hole, the method further includes: performing a polishing operation on the conductive hole.

[0059] By polishing the conductive holes, the surface of the conductive material in the conductive holes can be made smooth and flat, and subsequently the conductive holes can be in full contact with the electrodes to ensure the test effect.

[0060] S103, thinning a local area around the conductive hole on the substrate until the height of the local area is lower than the height of the conductive material.

[0061] Exemplarily, a laser can be used to thin the local area around the conductive hole on the substrate. The laser can be, for example: an ultraviolet laser of about 10W and 355nm, or a green light of about 10-30W and 532nm, or a red light of less than 100W and 1064nm.

[0062] S104, preparing a passivation protective layer on the thinned substrate, and removing the local area of ​​the passivation protective layer covering the conductive hole to obtain a test carrier, wherein one side of the conductive hole of the test carrier is used to contact with the probe of the test machine, and the other side is used to contact with the electrode of the micro light-emitting diode.

[0063] The material of the passivation protective layer can be a non-conductive material selected as needed, for example, the passivation protective layer can be made of organic glue, such as ultraviolet rays curing adhesive (UV) glue, organic silica gel, acrylate, epoxy resin, polyimide, etc.; inorganic passivation materials can also be selected, such as silicon nitride SiNx, silicon dioxide SiO2, etc. Among them, the thickness of the passivation protective layer must be higher than the conductive material in the conductive hole, and does not exceed the height of the substrate, that is, no overflow occurs.

[0064] Since the height of the passivation protection layer is higher than the conductive material of the conductive hole, the passivation protection layer will cover the conductive material. Therefore, it is necessary to remove the local area of ​​the passivation protection layer covering the conductive hole to expose the conductive material and obtain the test carrier. Preferably, a 355nm ultraviolet laser can be selected for thinning, and the power can be selected to be 10-30W; or plasma etching can be selected, and the etching process gas selection is carbon tetrafluoride CF 4 / Trifluoromethane CHF 3 +Oxygen 2 , power is less than 500W.

[0065] One side of the conductive hole of the test carrier is used to contact the probe of the test machine, and the other side is used to contact the electrode of the micro-LED to achieve EL testing of the micro-LED, and can avoid direct contact between the probe and the electrode, which may damage the micro-LED. A passivation protective layer is set on the test carrier to isolate and protect, and can also alleviate the static electricity generated during the test and affect the test process.

[0066] The process of generating a test carrier is described as follows. The process includes:

[0067] Step a1, preparing a substrate. The prepared substrate is as follows Figure 3a shown. Figure 3a What is shown in the figure is a cross-sectional schematic diagram of the substrate, wherein the shape, size, etc. of the substrate can be determined according to the business scenario.

[0068] Step a2: drilling a hole on the substrate.

[0069] For example, see Figure 3b As shown, a mask plate and a laser can be used to perform a drilling operation on the substrate.

[0070] Step a3: Fill the holes of the substrate with conductive material to obtain conductive holes.

[0071] For example, see Figure 3c Conductive holes shown.

[0072] Step a4: thinning a local area of ​​the substrate.

[0073] For example, see Figure 3d As shown, a laser and a mask plate can be used to perform a thinning operation on a local area of ​​the substrate, wherein the mask plate can be made of a material that the laser cannot pass through, such as copper.

[0074] Step a5: preparing a passivation protective layer.

[0075] For example, see Figure 3e The passivation protective layer shown can cover the entire substrate area without leaking out.

[0076] Step a6: thinning the passivation protective layer.

[0077] For example, see Figure 3f As shown, a laser and a mask are used to remove the local area covered with the conductive material on the passivation protection layer, so that the conductive material of the conductive hole is exposed, thereby obtaining a test carrier.

[0078] in Figures 3a to 3f These are schematic diagrams of processing the same substrate. The size change of the substrate in the figures is only for demonstration effect, and the specific processing of the substrate is mainly based on the above description.

[0079] Among them, the depth of the conductive material can be determined according to the thickness of the substrate, the electrode height of the micro-LED, the height of the passivation protective layer, etc., so that the height difference between the height of the passivation protective layer and the height of the conductive material in the conductive hole is smaller than the electrode height, so that when the electrode of the micro-LED is subsequently placed in the conductive hole, the conductive hole can be used to fix the micro-LED to avoid shaking and deviation of the micro-LED, and it can also avoid the situation where the electrode cannot fully contact the conductive material in the conductive hole.

[0080] In the present disclosure, after aligning the probe of the test machine with the conductive hole of the test carrier, it is only necessary to place the electrode of the micro-LED on the conductive hole. After the micro-LED is tested, the micro-LED is taken out and the next micro-LED is placed. There is no need to repeatedly align the probe with the test carrier, that is, the probe only needs to be aligned with the test carrier once, and the test process is relatively simple and efficient. Moreover, the test carrier can be reused multiple times, and the utilization rate is high.

[0081] See also Figure 4 FIG. 4 is a flow chart of another method for preparing a test carrier provided by an embodiment of the present disclosure, the method comprising steps S401 to S403, wherein:

[0082] S401, preparing a non-conductive substrate;

[0083] S402, punching holes in the substrate according to the size information of the micro light emitting diodes;

[0084] S403, filling the conductive material into the multiple holes of the substrate, and controlling the conductive material to solidify according to the set target temperature to obtain a test carrier provided with conductive holes, wherein the conductive material is a sticky conductive material, and one side of the conductive hole of the test carrier is used to contact with the probe of the test machine, and the other side is used to contact with the electrode of the micro light-emitting diode chip.

[0085] During implementation, the material of the substrate may be glass, sapphire, PI, PET, etc., and the thickness of the substrate may not exceed 1 mm.

[0086] According to the size information of the micro-LED, such as the spacing width between the N-electrode and the P-electrode of the micro-LED and the electrode width, the substrate is punched, wherein the width of the hole can be slightly larger than or much larger than the electrode width of the micro-LED, and the spacing between adjacent holes can be less than or equal to the spacing width between the electrodes. For example, the aperture size of the hole can be between 10 micrometers and 30 micrometers, including 10 micrometers and 30 micrometers. The shape of the hole can also be selected as needed, such as round, square, etc.

[0087] During implementation, a laser may be used to punch holes in the substrate, wherein the choice of laser may be determined according to the material and thickness of the substrate, for example, the laser may be an ultraviolet laser of about 10W and 355nm, or a green light of about 10-30W and 532nm, or a red light of less than 100W and 1064nm.

[0088] The conductive material is filled into the plurality of holes of the substrate, and the conductive material is controlled to solidify according to the set target temperature to obtain a test carrier provided with conductive holes. Optionally, the target temperature is lower than 100 degrees Celsius to avoid the conductive material from reacting when the temperature is too high, affecting the conductive performance of the conductive material, and affecting the flatness of the conductive material.

[0089] The conductive material is a viscous conductive material, and the conductive material may be, for example, a conductive silver paste, a conductive hydrogel, a mixture of conductive carbon powder particles and glue, or a mixture of nano silver Ag particles and glue, etc. One side of the conductive hole of the test carrier is used to contact with the probe of the test machine, and the other side is used to contact with the electrode of the micro-LED chip. Therefore, the present disclosure selects a viscous conductive material, which can fix the electrode after the conductive hole contacts the electrode, avoid shaking and deviation of the micro-LED, and ensure the accuracy of the test process.

[0090] The process of generating a test carrier is described as an example. The process includes:

[0091] Step b1, preparing a substrate. The prepared substrate is as follows Figure 5a shown. Figure 5a What is shown in the figure is a cross-sectional schematic diagram of the substrate, wherein the shape, size, etc. of the substrate can be determined according to the business scenario.

[0092] Step b2: drilling holes on the substrate.

[0093] For example, see Figure 5b As shown, a mask plate and a laser can be used to perform a drilling operation on the substrate.

[0094] Step b3, filling with conductive material.

[0095] For example, see Figure 5c As shown, a viscous conductive material can be filled into the hole to generate a conductive hole, wherein the height of the conductive material does not exceed the substrate to prevent leakage of the conductive material.

[0096] The above-mentioned process of generating the test carrier is relatively simple, and by filling the sticky conductive material, the test process of the micro-LED is realized, and the shaking and offset of the micro-light-emitting secondary light can be alleviated to ensure the test effect. At the same time, in the present disclosure, after aligning the probe of the test machine with the conductive hole of the test carrier, it is only necessary to place the electrode of the micro-LED on the conductive hole. After the test of the micro-LED is completed, the micro-LED is taken out and the next micro-LED is placed. There is no need to repeatedly align the probe with the test carrier, that is, the probe only needs to be aligned with the test carrier once, and the test process is relatively simple and efficient. Furthermore, in the present disclosure, the size of the conductive hole can be set larger, so that the test carrier can adapt to micro-LEDs of various sizes, and there is no need to replace probes of different sizes for micro-LEDs of different sizes, thereby improving the test efficiency.

[0097] Optional, see Figure 6 As shown, the present disclosure also provides a test carrier, including: a substrate, and a plurality of conductive holes arranged on the substrate, the conductive holes are filled with conductive materials, and a passivation protection layer is arranged in the local substrate area around the conductive holes, wherein the positions and sizes of the plurality of conductive holes are determined according to the size information of the micro light-emitting diodes.

[0098] Optionally, the thickness of the substrate is in the range of greater than or equal to 0.5 mm and less than or equal to 1 mm. Considering that the thickness of the substrate may affect the test, the preferred thickness range of the present disclosure is between 0.5 mm and 1 mm.

[0099] Optionally, the height of the passivation protection layer on the test carrier is higher than the height of the conductive material in the conductive hole and lower than the height of the substrate. The above configuration can make the passivation protection layer play a role in isolating static electricity and ensure the test effect.

[0100] Optionally, the height difference between the height of the passivation protection layer on the test carrier and the height of the conductive material in the conductive hole is smaller than the electrode height of the micro-LED. By setting the height difference smaller than the electrode height, the electrode and the conductive material can be fully in contact, and the micro-LED can be fixed, preventing the micro-LED from shifting and shaking, thereby ensuring the test effect.

[0101] Optional, see Figure 7 As shown, the present disclosure further provides a test carrier, comprising: a substrate, and a plurality of conductive holes arranged on the substrate, wherein the conductive holes are filled with a viscous conductive material.

[0102] Optional, see Figure 8 As shown, the present disclosure also provides a method for testing a micro light emitting diode, comprising:

[0103] S801, aligning a plurality of probes of an electrical testing machine with a plurality of conductive holes of a test carrier; wherein the test carrier is the test carrier described in any of the above embodiments;

[0104] S802, placing the micro light emitting diode to be tested on the test carrier, and the P electrode and the N electrode of the micro light emitting diode are respectively in contact with the plurality of conductive holes of the test carrier;

[0105] S803 , after controlling the electrical testing machine to be powered on and supplying power to the micro light emitting diode through the multiple probes, collecting test data of the micro light emitting diode, and determining the performance of the micro light emitting diode according to the test data.

[0106] See also Fig. 9 As shown, one side of the conductive hole of the test carrier is contacted with the probe of the electrical test machine, and the other side is contacted with the P electrode and N electrode of the micro-LED to be tested. The electrical test machine is controlled to power on, and the micro-LED is powered through multiple probes. Then, the test data of the micro-LED can be collected. The test data may include but is not limited to: brightness, chromaticity, current, etc., and the performance of the micro-LED is determined based on the test data.

[0107] The micro light emitting diode is tested through the above process, which avoids the damage of the probe to the electrode and ensures the test effect.

[0108] Those skilled in the art will appreciate that, in the above method of specific implementation, the order in which the steps are written does not imply a strict execution order and does not constitute any limitation on the implementation process. The specific execution order of the steps should be determined by their functions and possible internal logic.

[0109] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present disclosure, which are used to illustrate the technical solutions of the present disclosure, rather than to limit them. The protection scope of the present disclosure is not limited thereto. Although the present disclosure is described in detail with reference to the aforementioned embodiments, ordinary technicians in the field should understand that any technician familiar with the technical field can still modify the technical solutions recorded in the aforementioned embodiments within the technical scope disclosed in the present disclosure, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present disclosure, and should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A method for preparing a test carrier, characterized in that: include: preparing a non-conductive substrate; According to the size information of the micro-LED, the substrate is punched, and a conductive material is filled into a plurality of holes of the substrate to obtain conductive holes; Thinning a local area around the conductive hole on the substrate until the height of the local area is lower than the height of the conductive material; A passivation protective layer is prepared on the thinned substrate, and a local area of ​​the passivation protective layer covering the conductive hole is removed to obtain a test carrier, wherein one side of the conductive hole of the test carrier is used to contact the probe of the test machine, and the other side is used to contact the electrode of the micro-light-emitting diode.

2. The preparation method according to claim 1, characterized in that: After generating the conductive holes, it also includes: The conductive hole is polished.

3. A method for preparing a test carrier, characterized in that: include: preparing a non-conductive substrate; Punching holes in the substrate according to the size information of the micro light emitting diodes; A conductive material is filled into a plurality of holes of a substrate, and the conductive material is controlled to solidify according to a set target temperature to obtain a test carrier provided with conductive holes, wherein the conductive material is a sticky conductive material, and one side of the conductive hole of the test carrier is used for contacting with a probe of a test machine, and the other side is used for contacting with an electrode of the micro-LED chip.

4. The preparation method according to claim 3, characterized in that: The target temperature is below 100 degrees Celsius.

5. A test carrier, characterized in that: include: A substrate, and a plurality of conductive holes arranged on the substrate, wherein the conductive holes are filled with conductive materials, and a passivation protection layer is arranged in a local substrate area around the conductive holes, wherein the positions and sizes of the plurality of conductive holes are determined according to the size information of the micro light-emitting diodes.

6. The test carrier according to claim 5, characterized in that: The thickness of the substrate is in the range of greater than or equal to 0.5 mm and less than or equal to 1 mm.

7. The test carrier according to claim 5, characterized in that: The height of the passivation protection layer on the test carrier is higher than the height of the conductive material in the conductive hole and lower than the height of the substrate.

8. The test carrier according to claim 5, characterized in that: The height difference between the height of the passivation protection layer on the test carrier and the height of the conductive material in the conductive hole is smaller than the electrode height of the micro light emitting diode.

9. A test carrier, characterized in that: include: A substrate and a plurality of conductive holes arranged on the substrate, wherein the conductive holes are filled with a viscous conductive material.

10. A method for testing a micro light emitting diode, characterized in that: include: Aligning multiple probes of an electrical test machine with multiple conductive holes of a test substrate; The test carrier is the test carrier according to any one of claims 5 to 8, or the test carrier according to claim 9; Placing the micro light emitting diode to be tested on the test carrier, with the P electrode and the N electrode of the micro light emitting diode respectively contacting the plurality of conductive holes of the test carrier; After the electrical testing machine is powered on and the micro light emitting diode is powered by the plurality of probes, test data of the micro light emitting diode is collected, and the performance of the micro light emitting diode is determined according to the test data.

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