Atomic layer deposition for in-situ sputtering

Abstract

Examples are disclosed that relate to the use of in-situ sputtering in an atomic layer deposition tool to form angular surface features in a substrate. One example provides a method of forming corner surface features on a substrate in an integrated circuit process. The method includes placing a substrate in a processing chamber of an atomic layer deposition (ALD) tool. The method further includes controlling the ALD tool to form a film on the substrate by performing one or more ALD cycles. The method further includes controlling the ALD tool to sputter the film to form angular surface features.

Description

Background Art

[0001] Electronic device manufacturing processes may involve many steps of material deposition, patterning, and removal to form integrated circuits on a substrate. A variety of methods can be used to process films of material to form integrated circuits. For example, atomic layer deposition (ALD) can be used to form films on a substrate in a layer-by-layer manner. As another example, sputtering can be performed to remove material from a substrate by bombarding the substrate with gas phase ions. Summary of the invention

[0002] This summary is provided to introduce a selection of concepts in a simplified form, which will be further described in the following detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. Furthermore, the claimed subject matter is not limited to implementations that address any or all of the disadvantages mentioned in any part of this disclosure.

[0003] Examples are disclosed that involve using in-situ sputtering in an atomic layer deposition tool to form angular surface features in a substrate in an ALD deposition process. One example provides a method of forming angular surface features on a substrate in an integrated circuit manufacturing process. The method includes placing the substrate in a process chamber of an atomic layer deposition (ALD) tool. The method also includes controlling the ALD tool to form a film on the substrate by performing one or more ALD cycles. The method also includes controlling the ALD tool to sputter the film to form the angular surface features.

[0004] In some such examples, an ALD cycle in the one or more ALD cycles includes: introducing a film precursor into the processing chamber so that the film precursor is adsorbed on the substrate, purging the processing chamber, introducing a reactant into the processing chamber, and reacting the film precursor with the reactant by forming a plasma containing the reactant to form the film.

[0005] In some such examples, controlling the ALD tool to sputter the film additionally or alternatively includes sputtering the film within the ALD cycle using ions in the plasma.

[0006] In some such examples, the method also additionally or alternatively includes controlling the ALD tool to form the plasma using the lower frequency component and the higher frequency component.

[0007] In some such examples, controlling the ALD tool to sputter the film additionally or alternatively includes performing a sputtering cycle in the ALD tool separate from the one or more ALD cycles.

[0008] In some such examples, the angled surface features additionally or alternatively include a recess above the void.

[0009] In some such examples, the angled surface features additionally or alternatively include a slope in the lining of the gap.

[0010] In some such examples, controlling the ALD tool to sputter the film additionally or alternatively includes forming a plasma comprising an inert gas and hydrogen.

[0011] In some such examples, controlling the ALD tool to sputter the film additionally or alternatively includes controlling the processing tool to heat a substrate heater to a temperature in a range of 50°C to 1000°C.

[0012] In some such examples, controlling the ALD tool to sputter the film additionally or alternatively includes controlling the ALD tool to maintain a pressure within the process chamber at 8 Torr or less during sputtering.

[0013] Another example provides an atomic layer deposition (ALD) tool. The ALD tool includes a process chamber. The ALD tool also includes: a substrate support, which is disposed in the process chamber. The ALD tool also includes: a film precursor source, which includes a film precursor. The ALD tool also includes: a reactant gas source, which includes a reactant. The ALD tool also includes: an inert gas source, which includes an inert gas. The ALD tool also includes: flow control hardware, which is configured to control the flow of film precursors, reactants and inert gases into the process chamber. The ALD tool also includes: an RF power source, which is operable to form a plasma in the process chamber. The ALD tool also includes a controller, which is configured to: control the flow control hardware and the RF power source to perform one or more ALD cycles to form a film on a substrate placed on the substrate support. The controller is also configured to: control the flow control hardware and the RF power source to perform one or more sputtering cycles to sputter the film to form an angular surface feature, the one or more sputtering cycles being separate from the one or more ALD cycles.

[0014] In some such examples, the ALD tool further includes a hydrogen source comprising hydrogen gas, and the controller is further configured to control the flow control hardware to introduce the inert gas and the hydrogen gas into the processing chamber, and to control the RF power source to form a plasma comprising the inert gas and the hydrogen gas.

[0015] In some such examples, the RF power source is additionally or alternatively configured to supply RF power comprising a lower frequency component and a higher frequency component.

[0016] In some such examples, the ALD tool also additionally or alternatively includes an exhaust system, and the controller is further configured to control the flow control hardware and the exhaust system to maintain a pressure within the processing chamber at 8 Torr or less during the one or more sputtering cycles.

[0017] In some such examples, the controller is additionally or alternatively configured to sputter the film during at least one ALD cycle of the one or more ALD cycles.

[0018] In some such examples, the ALD tool also additionally or alternatively includes a substrate heater, and the controller is configured to heat the substrate heater to a temperature in a range of 50°C to 1000°C.

[0019] In some such examples, the controller is additionally or alternatively configured to purge the chamber after controlling the RF power source to extinguish the plasma.

[0020] In some such examples, the flow control hardware is additionally or alternatively configured to introduce the inert gas into the process chamber through a process chemistry outlet that is spaced apart from the substrate by a spacing in a range of 0.2 inches to 0.8 inches.

[0021] Another example provides an atomic layer deposition (ALD) tool comprising a process chamber. The ALD tool also includes: a substrate support disposed in the process chamber. The ALD tool also includes: one or more film precursor sources including one or more film precursors. The ALD tool also includes: an inert gas source including an inert gas. The ALD tool also includes: one or more reactant sources including one or more reactants. The ALD tool also includes: flow control hardware configured to control the flow of the one or more film precursors, the one or more reactants, and the inert gas into the process chamber. The ALD tool also includes: an RF power source and an electrode pair configured to form a plasma in the process chamber. The ALD tool also includes a controller configured to: control the flow control hardware and the RF power source to perform one or more ALD cycles with sputtering to form a film on a substrate placed on the substrate support and to form angular surface features of the film.

[0022] In some such examples, the one or more reactants include a nitrogen-containing precursor.

[0023] In some such examples, the one or more reactants additionally or alternatively include an oxidant. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1A-1B An exemplary ALD gap-fill process without in-situ sputtering is shown.

[0025] Figure 2 A block diagram of an exemplary ALD tool is shown.

[0026] Figure 3A-3B An exemplary ALD gap-fill process utilizing in-situ sputtering is shown.

[0027] Figure 4 An exemplary ALD liner deposition process omitting in-situ sputtering is shown.

[0028] Figures 5A-5C An exemplary ALD liner deposition process utilizing in-situ sputtering to form exemplary angular surface features is shown.

[0029] Figures 6A-6C Another exemplary ALD liner deposition process utilizing in-situ sputtering to form exemplary angular surface features is shown.

[0030] Figure 7 A flow chart depicting an exemplary method for performing in-situ sputtering simultaneously with an atomic layer deposition (ALD) cycle is shown.

[0031] Figure 8 A flow chart depicting an exemplary method for performing separate ALD cycles and in-situ sputtering cycles is shown.

[0032] Fig. 9 A flow chart depicting an exemplary method for performing an ALD cycle with or without sputtering in addition to a separate in-situ sputtering cycle is shown.

[0033] Fig.10 A block diagram of an example computing device is shown. DETAILED DESCRIPTION

[0034] The term "atomic layer deposition" (ALD) may generally refer to a process of forming a film in a single film layer on a substrate by continuous ALD cycles. Examples of ALD processes include plasma enhanced ALD (PEALD) and thermal ALD (TALD). PEALD and TALD utilize plasma of reactive gases and heat, respectively, to promote the conversion of precursor chemicals adsorbed onto a substrate into a film on the substrate. The terms "growth", "deposition" and variations thereof may also be used to refer to film formation.

[0035] The term "ALD cycle" may generally refer to a cycle of adsorbing a precursor to a substrate and reacting the adsorbed precursor to form a film layer.

[0036] The term "ALD cycle with sputtering" may generally refer to an ALD cycle that forms a film layer using a plasma configured to cause controllable in-situ sputtering of angular surface features of the film.

[0037] The term "sputter-free ALD cycle" may generally refer to a PEALD or other ALD cycle that forms a film layer using a plasma configured to not cause in-situ sputtering of angular surface features of the film.

[0038] The term "ALD tool" may generally refer to a machine that includes a processing chamber and other hardware configured to enable ALD to be performed in the processing chamber.

[0039] The term "angular surface feature" may generally refer to features on a substrate surface that are transverse to the plane of the substrate surface and transverse to the normal to the substrate surface. Exemplary angular surface features may include concavities and bevels. When used in reference to an angular surface feature, the term "profile" may generally refer to the cross-sectional shape of the angular surface feature.

[0040] The term "bevel" may generally refer to an angled edge of a feature.

[0041] The term "bevel angle" may be generally used to refer to the angle of the bevel relative to the substrate surface.

[0042] The term "recess" may generally refer to an angular surface feature that is recessed from a substrate surface. During a gap-fill process, a recess may be formed on a gap. In various examples, the sides of the recess may be substantially flat or curved.

[0043] The term "recess angle" may be used generally to refer to the angle between the sides of a recess.

[0044] The term "film" may generally refer to a layer of material deposited on a substrate.

[0045] The term "film precursor" may generally refer to a chemical substance that can be adsorbed to a substrate surface and chemically converted to form a film. The chemical conversion may occur by reaction with a reactant. Exemplary films include films of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and metal oxides such as aluminum oxide, molybdenum oxide, titanium oxide, tungsten oxide, tin oxide, zirconium oxide, or hafnium oxide. Exemplary film precursors include silicon-containing precursors, carbon-containing precursors, and metal-containing precursors, such as molybdenum-containing precursors, tungsten-containing precursors, aluminum-containing precursors, titanium-containing precursors, tin-containing precursors, zirconium-containing precursors, and hafnium-containing precursors.

[0046] An exemplary silicon-containing precursor for forming a silicon-containing film using ALD may include a material having the following general structure: Wherein R1, R2 and R3 can be the same or different substituents and can include silane, siloxy group, amine, halide, hydrogen or organic groups such as alkylamine, alkoxy, alkyl, alkenyl, alkynyl and aromatic groups.

[0047] More specific exemplary silicon-containing precursors include polysilane (H3Si-(SiH2) n -SiH3), where n≥1, such as silane, disilane, trisilane, tetrasilane and trisilylamine.

[0048] In some examples, the silicon-containing precursor is an alkoxysilane. Useful alkoxysilanes include the following: x -Si-(OR) y , wherein x=1-3, x+y=4 and each R is a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group or a substituted or unsubstituted aromatic group; and H x (RO) y ,-Si-Si-(OR) y H x , wherein each R is a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group, or a substituted or unsubstituted aromatic group.

[0049] Further examples of silicon-containing precursors include tetraethyl silicate (TEOS), tetramethoxysilane (TMOS), methylsilane, trimethylsilane (3MS), tetramethylsilane, ethylsilane, butasilane, pentasilane, octylsilane, heptylsilane, hexasilane, cyclotetrasilane, cycloheptylsilane, cyclohexasilane, cyclooctylsilane, cyclopentasilane, 1,4-dioxa-2,3,5,6-tetrasilcyclohexane, diethoxymethylsilane (DEMS), diethoxysilane (DES), dimethoxymethylsilane, dimethoxysilane (DMOS), methyldiethoxysilane (MDES), methyldimethoxysilane (MDMS), tert-butoxydisilane, triethoxysilane (TES) and trimethoxysilane (TMS or TriMOS).

[0050] In some examples, the silicon-containing precursor may include a siloxane. Exemplary siloxanes include octamethylcyclotetrasiloxane (OMCTS), octamethoxydodecylsiloxane (OMODDS), tetramethylcyclotetrasiloxane (TMCTS), triethoxysiloxane (TRIES), and tetraoxymethylcyclotetrasiloxane (TOMCTS).

[0051] Further, in some examples, the silicon-containing precursor may be an aminosilane, such as bis-diethylaminosilane, diisopropylaminosilane, bis-(tert-butylamino)silane (BTBAS), di-sec-butylaminosilane, or tris-(dimethylamino)silane (3DMAS). Aminosilane precursors include the following: x -Si-(NR) y , wherein x=1-3, x+y=4, and R is a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group, a substituted or unsubstituted aromatic group, or a hydride group.

[0052] In some examples, a halogen-containing silane may be used as a silicon-containing precursor such that the silane contains at least one hydrogen atom. Such a silane may have a chemical formula of SiX a H y , where y≥1, a+y=4. In some examples, dichlorosilane (H2SiCl2) may be used.

[0053] Exemplary carbon-containing film precursors for forming silicon carbide films include those having the general formula C n H 2n+2 Alkanes (where n = 1 to 10 (e.g. methane, ethane, etc.)) having the general formula C n H 2n Olefins (where n = 2 to 10 (e.g., ethylene, propylene, etc.)) having the general formula C n H 2n-2 Alkynes (where n=2 to 10 (eg, acetylene, propyne, etc.)), and other hydrocarbons (such as cyclic hydrocarbons and nitrogen-containing compounds, including aromatic compounds), which are in the vapor phase under the processing conditions.

[0054] The term "metal-containing precursor" may generally refer to any material that can be introduced into a processing chamber and oxidized on a substrate surface to form a metal oxide film on the substrate surface. Examples of metal-containing precursors include aluminum-containing precursors, molybdenum-containing precursors, titanium-containing precursors, tungsten-containing precursors, tin-containing precursors, zirconium-containing precursors, and hafnium-containing precursors, which can be used to form aluminum oxide (AlO x ), molybdenum oxide (MoO x ), titanium oxide (TiO x ), tungsten oxide (WO x ) film, tin oxide (SnO x ) film, zirconium oxide (ZrO x ) film, hafnium oxide (HfOx) film.

[0055] To form aluminum oxide (AlO x Examples of aluminum-containing precursors include aluminum halides (AlX y ), aluminum alkoxide (C9H 21AlO3), trimethylaluminum (AlC3H9), carbonylaluminum (Al(CO) x ) and aluminum hydride (AlH3).

[0056] To form molybdenum oxide (MoO x Examples of molybdenum-containing precursors include bis(tert-butylimino)bis(dimethylamino)molybdenum (C12H 30 MoN4), molybdenum pentachloride (MoCl5), dichloromolybdenum oxide (MoO2Cl2), tetrachloromolybdenum oxide (MoOCl4) and molybdenum hexacarbonyl (Mo(CO)6).

[0057] For forming titanium oxide film (TiO x Examples of titanium-containing precursors of ) include titanium tetrachloride (TCl4) and isopropyl titanate (Ti(OCH(CH3)2)4).

[0058] For forming tungsten oxide film (WO x Examples of tungsten-containing precursors include tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), bis(tert-butylimino)bis(dimethylamino)tungsten (C12H 30 N4W) and hexacarbonyl tungsten (W(CO)6).

[0059] For forming tin oxide film (SnO x ) include tin tetrachloride (SnCl4), tetramethyltin ((CH3)4Sn), tetraethyltin ((C2H5)4Sn), dimethyltin dichloride ((CH3)2SnCl2), dibutyl(dimethoxy)tin (Bu2Sn(OMe)2), tetrakis(dimethylamino)tin(IV) (Sn(NMe2)4), dimethylaminodimethyltin (Me2Sn(NMe2)2) and dimethylaminotrimethyltin (Me3Sn(NMe2)), where Bu represents a butyl group (C4H9) and Me represents a methyl group (CH3).

[0060] Examples of zirconium-containing precursors include tetrakis(dimethylamino)zirconium(IV) ((NMe2)4Zr), tetrakis(ethylmethylamino)zirconium(IV) ((NEtMe)4Zr), and tetrakis(diethylamino)zirconium(IV) ((NEt2)4Zr), where Et represents an ethyl group (C2H5).

[0061] For forming hafnium oxide film (HfO x Examples of hafnium-containing precursors include hafnium tetrachloride (HfCl4), tetrakis(diethylamino)hafnium (Hf(N(C2H5)2)4), and tetrakis(tert-butoxy)hafnium (Hf(OC(CH3)3)4).

[0062] Exemplary reactants that can react with the film precursor to form a film can include oxidants and nitrogen-donating compounds. Exemplary oxidants include oxygen, ozone, hydrogen peroxide, and water vapor. Exemplary reactants for supplying nitrogen to form a silicon nitride film include nitrogen (N2), ammonia (NH3), and hydrazine (N2H4). An exemplary reactant for supplying nitrogen to form a silicon oxynitride film is N2O.

[0063] The term "flow control hardware" may generally refer to components configured to place one or more chemical sources in fluid connection with a process chamber. The flow control hardware may, for example, include one or more mass flow controllers and / or valves. Exemplary chemical sources include film precursor sources, inert gas sources, and reactant gas sources.

[0064] The term "gap" may generally refer to a recessed feature in the surface of a substrate.

[0065] The term "gap fill" may generally refer to a process of at least partially filling a gap on a substrate with a material.

[0066] The term "intermediate structure" may generally refer to a structure formed by an earlier processing step and modified by a subsequent processing step.

[0067] The term "liner" may generally refer to a film of material that coats features of a substrate.

[0068] The term "plasma" may generally refer to an ionized gas containing positive ions and free electrons. Plasma may be generated using any suitable method and may include radio frequency (RF) plasma, microwave plasma, and electron beam generated plasma. Plasma may be used to generate free radical species.

[0069] The term "processing chamber" may generally refer to an enclosure in which chemical and / or physical processes are performed on a substrate.

[0070] The term "process chemical outlet" may generally refer to any structure for injecting gas phase process chemicals into a process chamber of a process tool. In various examples, the process chemical outlet may include a nozzle or a showerhead. Exemplary process chemicals include film precursors, reactants, and inert gases.

[0071] The term "processing tool" may generally refer to a machine that includes a processing chamber and other hardware configured to enable a process to be performed in the processing chamber.

[0072] The term "purge" and its variations may generally refer to the process of removing undesirable materials from a processing chamber.

[0073] The term "radio frequency (RF) power source" may generally refer to a component of a processing tool that is configured to apply power to a pair of electrodes in a processing chamber to form a plasma between the electrodes.

[0074] The term "showerhead" may generally refer to a treatment chemical outlet comprising a plurality of holes distributed over an area.

[0075] The term "sputtering" and variations thereof may generally refer to a process in which ions in a plasma are accelerated toward a substrate with sufficient kinetic energy to cause at least some material to be ejected from the substrate upon collision with the substrate. "In-situ sputtering" refers to sputtering performed within an ALD tool.

[0076] The term "sputtering cycle" may generally refer to a process cycle that includes sputtering a substrate surface using ions in a plasma.

[0077] The term "substrate" may generally refer to any object upon which a film may be deposited.

[0078] The term "substrate heater" may generally refer to a heater in a processing chamber that is configured to heat a substrate.

[0079] The term "substrate support" may generally refer to any structure used to support a substrate in a processing chamber. Examples include chucks, pedestals, and showerhead pedestals for backside deposition processes.

[0080] The term "sticking coefficient" may generally refer to the ratio of the amount of gas-phase species adsorbed on the substrate surface compared to the amount of gas-phase species impinging on the substrate surface.

[0081] The term "void" may generally refer to a hollow cavity in a substrate.

[0082] The term "3D DRAM" is an acronym for Three-Dimensional Dynamic Random Access Memory.

[0083] The term “3D NAND” is an acronym for Three-Dimensional NOT AND Memory and refers to a memory architecture based on NOT AND logic gates.

[0084] The term “3D NOR” is an acronym for Three-Dimensional NOT OR Memory and refers to a memory architecture based on NOT OR logic gates.

[0085] As mentioned above, the manufacture of electronic devices involves many steps of material deposition, patterning, and removal. For example, 3D NAND (Not AND) semiconductor devices are built on stacked paired material layers. One layer in each pair is a device layer. The other layer in each pair is a dielectric layer for electrical isolation. A stack comprising multiple such paired material layers may be referred to as a "mold stack". Patterning, etching, and metallization of the mold stack are performed to form a 3D NAND memory chip. Similar processes can be used to form 3D DRAM and 3D NOR chips.

[0086] During the 3D NAND device integration process, large areas of effectively empty space are formed within the device. These areas are called gaps. These gaps can be filled with material to provide material for further patterning steps and / or for forming various structures such as circuits, gates, or memory structures.

[0087] In some examples, the gaps are partially filled to create voids to achieve desired electronic and / or mechanical properties. For example, when forming 3D NAND memory blocks, ALD can be used to deposit material in the gaps such that the deposited material forms voids between the memory blocks. Figure 1A-1B An example of such a deposition process is schematically shown. Figure 1A An intermediate structure is shown that includes a film 102 that is partially deposited in a process that fills a gap 104 in a substrate 106. In some examples, the profile of the gap and / or the film thickness can be adjusted by adjusting the processing conditions. In some examples, the substrate 106 can represent a 3D NAND die stack. In other examples, the substrate 106 can represent any other suitable structure, such as an intermediate structure in a 3D DRAM or 3D NOR process. The film 102 can include any suitable material. Examples include silicon oxide, silicon nitride, and silicon oxynitride.

[0088] As the film 102 grows, the adhesion coefficient of the material forming the film 102 causes the film 102 to be preferentially deposited closer to the opening of the gap 104 rather than deeper within the gap 104. Figure 1B , the film 102 pinches off the gap 104 near the top of the gap 104 to form a void 108. Further, a recess 110 is formed above the void 108 at the surface of the film 102.

[0089] The recess 110 formed above the void 108 may have a sharp corner where the sides of the recess 110 meet. When the recess 110 is covered by another material, the recess 110 with a sharp corner may cause the formation of additional, undesirable voids (not shown). In addition, the upper end 120 of the void 108 is located near the substrate surface, close to the recess 110. Therefore, the film 102 has a relatively thin profile. This is marked with thickness 112. In some examples, the void 108 may be less than 40nm from the recess 110. In some examples, the upper end 120 of the void 108 may be above the top surface 122 of the substrate 106. This may cause the void 108 to be opened when planarization or etching is performed in subsequent processing. Such problems may cause device defects.

[0090] One possible solution is to use an ALD tool to deposit a portion of the film 102, then move the substrate to a sputtering tool to modify the deposited film. For example, sputtering can be used to move material of the film 102 to a location deeper within the gap 104. Alternating ALD cycles with sputtering cycles can alternatively or additionally be used to drive the pinched-off location of the film 102 deeper into the gap 104. However, moving the substrate between the ALD tool and the sputtering tool can be time consuming, increase costs, and reduce production yields.

[0091] Thus, examples of performing in-situ sputtering within an ALD tool are disclosed. In-situ sputtering within an ALD tool may be performed to modify the profile of angular surface features (e.g., recess 110) of a film during film deposition. In-situ sputtering and film deposition in an ALD tool may be used to partially fill gaps and avoid forming sharp recessed corners. In-situ sputtering during ALD deposition may also be used to move the pinch-off depth of the film deeper into the gap compared to ALD without in-situ sputtering. Other angular surface features may also be formed by performing in-situ sputtering in an ALD tool. Another example of an angular surface feature includes an angled liner formed within the gap. As described in more detail below, such a structure may be formed without repeatedly moving the substrate between the ALD tool and the sputtering tool. This may allow angular surface features to be efficiently formed by performing in-situ sputtering in an ALD tool during a film deposition process.

[0092] Figure 2 An exemplary ALD tool 200 configured to perform in-situ sputtering is schematically shown. The ALD tool 200 is configured as a PEALD tool. The ALD tool 200 includes a process chamber 202 and a substrate support 204 within the process chamber. The substrate support 204 is configured to support a substrate 206 disposed within the process chamber 202. The substrate support 204 may include a pedestal, a chuck, and / or any other suitable structure. The substrate support 204 is configured to be raised and lowered to adjust the position of the substrate 206 within the process chamber 202.

[0093] The processing chamber 202 can further include a substrate heater 208 configured to heat a substrate placed on the substrate support 204. In other examples, the heater can be omitted. In some examples, the substrate heater 208 is configured to heat to a temperature in the range of 50° C. to 1000° C. In some examples, a relatively high substrate temperature can be used to achieve a relatively large degree of sputtering.

[0094] The ALD tool 200 further includes a process chemical outlet 210 and flow control hardware 214. In some examples, the process chemical outlet 210 may include a nozzle, a showerhead, or other device for introducing a gas into the process chamber 202. The substrate support 204 may be raised and lowered to adjust the spacing between the substrate 206 and the process chemical outlet 210. In some examples, the spacing may be adjusted to a spacing within a range of 0.2 inches to 0.8 inches. In other examples, spacings outside of this range may be used. In some examples, a relatively small spacing may provide a higher sputtering rate than a larger spacing.

[0095] Flow control hardware 214 is connected to a film precursor source 216, a reactant gas source 218, an inert gas source 220, and an optional hydrogen-containing gas source 222. Film precursor source 216 may include any suitable film precursor that can form a film in an ALD process. Exemplary films include silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and metal oxides such as aluminum oxide, molybdenum oxide, titanium oxide, tungsten oxide, tin oxide, zirconium oxide, or hafnium oxide.

[0096] An exemplary silicon-containing precursor for forming a silicon-containing film using ALD may include a material having the following general structure: Wherein R1, R2 and R3 can be the same or different substituents and can include silane, siloxy group, amine, halide, hydrogen or organic groups such as alkylamine, alkoxy, alkyl, alkenyl, alkynyl and aromatic groups.

[0097] More specific exemplary silicon-containing precursors include polysilane (H3Si-(SiH2) n -SiH3), where n≥1, such as silane, disilane, trisilane, tetrasilane and trisilylamine.

[0098] In some examples, the silicon-containing precursor is an alkoxysilane. Useful alkoxysilanes include the following: x -Si-(OR) y , wherein x=1-3, x+y=4 and each R is a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group or a substituted or unsubstituted aromatic group; and H x (RO) y ,-Si-Si-(OR) y H x , wherein R is a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group, or a substituted or unsubstituted aromatic group.

[0099] Further examples of silicon-containing precursors include tetraethyl silicate (TEOS), tetramethoxysilane (TMOS), methylsilane, trimethylsilane (3MS), tetramethylsilane, ethylsilane, butasilane, pentasilane, octylsilane, heptylsilane, hexasilane, cyclotetrasilane, cycloheptylsilane, cyclohexasilane, cyclooctylsilane, cyclopentasilane, 1,4-dioxa-2,3,5,6-tetrasilcyclohexane, diethoxymethylsilane (DEMS), diethoxysilane (DES), dimethoxymethylsilane, dimethoxysilane (DMOS), methyldiethoxysilane (MDES), methyldimethoxysilane (MDMS), tert-butoxydisilane, triethoxysilane (TES) and trimethoxysilane (TMS or TriMOS).

[0100] In some examples, the silicon-containing precursor may include a siloxane. Exemplary siloxanes include octamethylcyclotetrasiloxane (OMCTS), octamethoxydodecylsiloxane (OMODDS), tetramethylcyclotetrasiloxane (TMCTS), triethoxysiloxane (TRIES), and tetraoxymethylcyclotetrasiloxane (TOMCTS).

[0101] Further, in some examples, the silicon-containing precursor may be an aminosilane, such as bis-diethylaminosilane, diisopropylaminosilane, bis-(tert-butylamino)silane (BTBAS), di-sec-butylaminosilane, or tris-(dimethylamino)silane (3DMAS). Aminosilane precursors include the following: x -Si-(NR) y , wherein x=1-3, x+y=4, and R is a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkynyl group, a substituted or unsubstituted aromatic group, or a hydride group.

[0102] In some examples, a halogen-containing silane may be used such that the silane contains at least one hydrogen atom. Such a silane may have the chemical formula SiX a H y , where y≥1, a+y=4. In some examples, dichlorosilane (H2SiCl2) may be used.

[0103] Exemplary carbon-containing precursors for forming silicon carbide films include those having the general formula C n H 2n+2 Alkanes (where n = 1 to 10 (e.g. methane, ethane, etc.)) having the general formula C n H 2n Olefins (where n = 2 to 10 (e.g., ethylene, propylene, etc.)) having the general formula C n H 2n-2Alkynes (where n = 2 to 10 (eg, acetylene, propyne, etc.)), and other hydrocarbons (eg, aromatic and other cyclic hydrocarbons, and nitrogen-containing compounds) which are in the vapor phase under the processing conditions.

[0104] To form aluminum oxide (AlO x Examples of aluminum-containing precursors include aluminum halides (AlX y ), aluminum alkoxide (C9H 21 AlO3), trimethylaluminum (AlC3H9), carbonylaluminum (Al(CO) x ) and aluminum hydride (AlH3).

[0105] To form molybdenum oxide (MoO x Examples of molybdenum-containing precursors include bis(tert-butylimino)bis(dimethylamino)molybdenum (C12H 30 MoN4), molybdenum pentachloride (MoCl5), dichloromolybdenum oxide (MoCl5), tetrachloromolybdenum oxide (MoOCl4) and molybdenum hexacarbonyl (Mo(CO)6).

[0106] For forming titanium oxide film (TiO x Examples of titanium-containing precursors of ) include titanium tetrachloride (TCl4) and isopropyl titanate (Ti(OCH(CH3)2)4).

[0107] For forming tungsten oxide film (WO x Examples of tungsten-containing precursors include tungsten hexafluoride (WF6), tungsten hexachloride (WCl6), bis(tert-butylimino)bis(dimethylamino)tungsten (C12H 30 N4W) and hexacarbonyl tungsten (W(CO)6).

[0108] For forming tin oxide film (SnO x ) include tin tetrachloride (SnCl4), tetramethyltin ((CH3)4Sn), tetraethyltin ((C2H5)4Sn), dimethyltin dichloride ((CH3)2SnCl2), dibutyl(dimethoxy)tin (Bu2Sn(OMe)2), tetrakis(dimethylamino)tin(IV) (Sn(NMe2)4), dimethylaminodimethyltin (Me2Sn(NMe2)2), and dimethylaminotrimethyltin (Me3Sn(NMe2)).

[0109] Examples of zirconium-containing precursors include tetrakis(dimethylamino)zirconium(IV) ((NMe2)4Zr), tetrakis(ethylmethylamino)zirconium(IV) ((NEtMe)4Zr), and tetrakis(diethylamino)zirconium(IV) ((NEt2)4Zr).

[0110] For forming hafnium oxide film (HfO xExamples of hafnium-containing precursors include hafnium tetrachloride (HfCl4), tetrakis(diethylamino)hafnium (Hf(N(C2H5)2)4), and tetrakis(tert-butoxy)hafnium (Hf(OC(CH3)3)4).

[0111] Reactant gas source 218 may include any suitable reactant or reactant mixture that forms a film when reacting with the film precursor adsorbed to the substrate surface. Exemplary reactants for providing oxygen to form oxide films include oxygen (O2), hydrogen peroxide (H2O2), ozone (O3), and water vapor (H2O). Exemplary reactants for providing nitrogen to form silicon nitride films include nitrogen (N2), ammonia (NH3), and hydrazine (N2H4). An exemplary reactant for providing nitrogen and oxygen to form silicon oxynitride films is N2O. When depositing carbon oxide films, one or more reactant gas sources may include an oxidant and a carbon-containing substance.

[0112] The inert gas source 220 may include any suitable inert gas. Examples include one or more of argon, nitrogen, helium, neon, krypton, or xenon. The inert gas may be used to form a plasma to sputter a film. In some examples, a heavier inert gas may provide a relatively higher sputtering rate than a lighter gas. For example, argon may provide a relatively higher sputtering rate than helium under similar pressure, temperature, and RF power conditions.

[0113] The hydrogen-containing gas source 222 includes any suitable hydrogen-containing gas. Examples include one or more of hydrogen, ammonia, water, methane, or silane. Introducing a hydrogen-containing gas into the processing chamber can enhance sputtering of the film. For example, the presence of hydrogen in the processing chamber during sputtering can help to chemically reduce the surface of the film and / or passivate dangling bonds on the surface of the film. Passivation of dangling bonds can promote ejection of the film material by powered ions during sputtering.

[0114] The flow control hardware 214 may be controlled to cause gases to flow from the film precursor source 216, the reactant gas source 218, the inert gas source 220, and the hydrogen-containing gas source 222 into the process chamber 202 via the process chemistry outlet 210. The flow control hardware 214 may include one or more mass flow controllers and / or valves that are controllable to place one or more selected gas sources in fluid connection with the process chemistry outlet 210. In other examples, the process tool may include one or more additional process chemistry outlets in addition to the process chemistry outlet 210.

[0115] The ALD tool 200 further includes an exhaust system 224. The exhaust system 224 is configured to exhaust gases from the processing chamber 202. The exhaust system 224 may include one or more pumps. In some examples, the exhaust system 224 is configured to actively remove gases from the processing chamber 202 and / or apply a partial vacuum. In this way, the flow control hardware 214 and the exhaust system 224 can be used to control the pressure within the processing chamber 202. In some examples, the pressure can be adjusted to 8 Torr or lower. In some examples, a relatively low pressure can provide more efficient sputtering compared to a relatively high pressure. In some examples, the ALD tool 200 is configured to apply a relatively low pressure during a sputtering cycle and a relatively high pressure during an ALD cycle.

[0116] The ALD tool 200 further includes an RF power source 228 electrically connected to the substrate support 204. The RF power source 228 is configured to form a plasma containing an inert gas and / or a reactant. In some examples, the plasma may further contain hydrogen. In this example, the process chemical outlet 210 is configured as a grounded relative electrode. In other examples, the RF power source 228 can supply RF power to the process chemical outlet 210 or to other appropriate electrode structures. The ALD tool 200 further includes a matching network 229 for impedance matching of the RF power source 228. The RF power source 228 can be configured for any appropriate frequency and power (i.e., amplitude). Examples of suitable frequencies include 400kHz, 13.56MHz, 27MHz, 60Mz, and 90MHz. Examples of suitable powers include powers between 0 watts and 1500 watts. In some examples, the RF power source 228 is configured to operate at a plurality of different frequencies and / or powers. In some examples, a first higher frequency RF power component can be used to form a plasma, while a second lower frequency RF power component can be used to enhance in-situ sputtering. For example, using an RF power having a higher amplitude can provide a relatively higher sputtering rate than using a lower amplitude. In addition, using a high frequency RF power component in combination with a low frequency RF power component can provide a relatively higher sputtering rate than an example in which the low frequency RF power component is omitted.

[0117] The controller 230 is operably coupled to the substrate heater 208, the flow control hardware 214, the exhaust system 224, and the RF power source 228. The controller 230 is configured to control various functions of the ALD tool 200 to perform an ALD cycle with sputtering, an ALD cycle without sputtering, and / or a sputtering cycle to form an angular surface feature on a substrate. An exemplary process cycle for performing an ALD deposition including in-situ sputtering is described in more detail below. For example, the controller 230 is configured to operate the substrate heater 208 to heat the substrate heater to a selected temperature. The controller 230 is also configured to raise and lower the substrate support 204 to adjust the spacing between the substrate 206 and the process chemical outlet 210. The controller 230 is also configured to operate the flow control hardware 214 to flow a selected gas or gas mixture into the process chamber 202 at a selected rate. The controller 230 is further configured to operate the exhaust system 224 to remove gas from the process chamber 202. The controller 230 is further configured to operate the flow control hardware 214 and the exhaust system 224 to control the pressure within the process chamber 202. In addition, the controller 230 is configured to operate the RF power source 228 to form a plasma to react one or more film precursors to form a film. The controller 230 is also configured to operate the RF power source 228 to form a plasma to perform sputtering on the film, as well as control any other suitable functions of the ALD tool 200. The controller 230 may include any suitable computing system, examples of which are described below with reference to Fig. 9 Give a description.

[0118] As mentioned above Figure 1A and 1B As discussed, in a gap fill process, the adhesion coefficient of the film precursor may cause the film to preferentially grow closer to the opening of the gap rather than deeper into the gap. This preferential growth may produce a relatively thin film over the voids formed by the gap fill process. This preferential growth may also result in relatively sharp concave corners in the film over the voids. Therefore, an ALD process including in-situ sputtering can be used to overcome these problems.

[0119] Figure 3A-3B An exemplary ALD process for forming a void in a gap and controlling the profile of a recess above the void using sputtering is schematically shown. Figure 3A, intermediate structure 300 is shown as including film 302 deposited within gap 304 of substrate 306 using ALD. Film 302 may include any suitable film. Examples include films of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and metal oxides such as aluminum oxide, molybdenum oxide, titanium oxide, tungsten oxide, tin oxide, zirconium oxide, or hafnium oxide. During ALD deposition of film 302, processing conditions are controlled to cause in-situ sputtering of film 302. Sputtering may cause material to be ejected from film 302 near the opening of gap 304. The ejected film material may be redeposited deeper in gap 304, thereby forming tip 308. Various exemplary process cycles including ALD deposition with in-situ sputtering are described below with reference to FIGS. 6-8.

[0120] Figure 3B An intermediate structure 300 is shown after further film deposition. As ALD proceeds, the tip 308 pinches off to form a void 312. The profile of the void 312 can be adjusted by controlling the processing conditions. Further, a recess 314 is located above the void 312. The recess 314 is an angular surface feature that includes a profile with a reentrant corner 316. The reentrant corner 316 can be compared to the reentrant corner 316 due to in-situ sputtering during ALD. Figure 1B The recess 110 is relatively wider. In some examples, the recess angle 316 includes an angle between 60° and 120°. Further, in some examples, the final sputtering cycle after completing the ALD film deposition can be used to modify the recess angle and / or reach a selected recess depth. For example, the final sputtering cycle can be used to increase the recess angle to ≥80°, ≥90°, or ≥95°. In other examples, the recess angle may be outside these ranges. In addition to the wider recess angle, the bottom of the recess 314 may also become more rounded due to sputtering. The wider recess angle and / or the rounder recess may facilitate further processing of the substrate. For example, compared with the relatively pointed recess 110 ( Figure 1B ), it is easier to avoid the formation of undesirable voids when depositing material on the recess 314 in subsequent processing steps.

[0121] Further, the sputtered material is redeposited deeper in the gap 304 to form the tip 308. Figure 1A-1B In the ALD deposition without sputtering, the closure depth of void 312 is pushed deeper into gap 304. Therefore, thickness 318 is greater than thickness 112. Further, the distance between upper end 320 of void 312 and top surface 322 of substrate 306 is greater than Figure 1A-1BThe distance between the upper end 120 and the top surface 122. In some examples, the thickness 318 can be in the range of 10 nm to 1000 nm. In other examples, the thickness 318 can have a suitable value outside of this range. The thickness 318 can depend on the width of the gap 304. In some examples, the thickness 318 depends on the width of the gap 304. The thickness 318 can help avoid opening the gap 312 in subsequent processing steps. For example, for Figure 1B The etching and / or planarization processes performed on structure 100 may cause the voids to be punctured or cause cracks in film 102. In contrast, structure 300 includes a thicker portion located above void 312, and upper end 320 is located below top surface 322. Therefore, film 302 is less likely to be cracked or punctured. In various examples, the profile, size, and location of the voids can be adjusted according to processing conditions.

[0122] In-situ sputtering can also help achieve a more rounded profile at the top of the voids compared to the example where sputtering is omitted. For example, compared to the more rounded upper end 320 of void 312, void 108 ( Figure 1B ) of the upper end 120( Figure 1B ) has a relatively sharp profile. Compared to a sharp profile, a rounded profile helps to distribute stress. Therefore, the rounded profile of the upper end 320 of the gap 312 can provide a relatively sharp profile compared to the gap 108 ( Figure 1B ) of the upper end 120( Figure 1B )A more mechanically stable membrane.

[0123] In-situ sputtering during ALD can be implemented using any suitable process. In some examples, the ALD process can include performing in-situ sputtering during film deposition. In other examples, the ALD process can include performing in-situ sputtering separately from deposition. In still other examples, a mixture of sputtering during deposition and sputtering separate from deposition can be used. An exemplary ALD process including in-situ sputtering is described in more detail below.

[0124] Various processing conditions can be controlled to control the extent of in-situ sputtering. As an example, a higher amplitude RF power can be used to cause a higher in-situ sputtering rate during deposition. Similarly, a lower amplitude RF power can be used to cause a lower in-situ sputtering rate during deposition, or to avoid in-situ sputtering. Further, in some examples, a higher frequency RF power component can be used to form a plasma, while a lower frequency RF power component can be used to control the rate of in-situ sputtering. The substrate temperature can also be controlled to help control the in-situ sputtering. For example, a relatively high substrate temperature can result in a relatively high in-situ sputtering rate. The chamber pressure can also be controlled to help control the in-situ sputtering. For example, a relatively low chamber pressure can result in a relatively high in-situ sputtering rate.

[0125] exist Figure 3A-3BIn the example, the ALD process including in-situ sputtering is used to partially fill the gap and form the desired void and recess profile. In other examples, the ALD process including in-situ sputtering can be used to form any other suitable angular surface features. For example, the ALD process including in-situ sputtering can be used to form a liner including a bevel. Figure 4 Schematically illustrated is a structure 400 including a liner layer deposited using ALD without in-situ sputtering. The liner layer includes a film 402 deposited over a surface of a gap 404 formed in a substrate 406. The gap 404 also extends through a silicon oxide layer 408 disposed on the substrate 406. In other examples, layer 408 may include any other suitable material, or may be omitted.

[0126] Film 402 covers the bottom and sidewalls of gap 404. Film 402 also covers the upper surface of layer 408. In this example, an upper portion 410 of gap 404 near the top of gap 404 may be substantially perpendicular to surface 412 of layer 408.

[0127] although Figure 4 Although not shown in the figure, in some manufacturing processes, it may be necessary to form a sloped portion at the upper portion of the gap 404.

[0128] Figures 5A-5C An exemplary liner deposition and bevel formation using ALD and in-situ sputtering is schematically shown. First, Figure 5A A structure 500 is shown including an ALD deposited liner 502 within a gap 504 in a substrate 506. The ALD deposited liner 502 may include any suitable film that may be deposited using ALD. Exemplary films include silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and metal oxides. The substrate 506 may represent any suitable structure in which the gap 504 may be formed. Examples include a 3D NAND die stack, a 3D DRAM structure, or a 3D NOR structure. The ALD deposited liner 502 is also deposited on a layer 508 of silicon dioxide. In other examples, layer 508 may include any other suitable material, or may be omitted.

[0129] Figure 5B A first exemplary endpoint of the structure 500 is shown after performing in-situ sputtering in a PEALD tool after depositing the ALD deposited liner 502 to form a bevel 510 in the ALD deposited liner 502. Figure 5B 508 is not exposed in the bevel 510. The bevel 510 includes a bevel angle 512 that can be based on a preferential angle of sputtering. The profile of the bevel 510 can be controlled by controlling processing conditions such as temperature, pressure, gas composition (including hydrogen concentration), and RF power. In some examples, the bevel angle includes an angle between 45° and 90°. In a more specific example, the bevel angle can include an angle between 75° and 89°.

[0130] In some examples, a wider opening with a longer bevel may be desired. Figure 5C A second exemplary endpoint of structure 500 after further in-situ sputtering of structure 500 is schematically shown. Due to the further sputtering, additional material is removed from the ALD deposited liner 502 to form a bevel 518 from which some material has been removed from layer 508. As such, a portion 502A of the ALD deposited liner is disposed within gap 504, while a portion 502B of the ALD deposited liner is disposed above layer 508. Bevel 518 includes a bevel angle 520 that may be based on a preferential angle of sputtering. The profile of bevel 518 may be controlled by controlling processing conditions such as temperature, pressure, gas composition (including hydrogen concentration), and RF power. In some examples, the bevel angle includes an angle between 45° and 90°. In a more specific example, the bevel angle may include an angle between 75° and 89°.

[0131] Figures 6A-6C Another exemplary liner deposition and bevel formation using ALD with in-situ sputtering is shown. Figures 5A-5C In the example of , the depicted endpoint structure can be formed by in-situ sputtering performed after ALD deposition of the liner. Figures 6A-6C The structure is formed by simultaneous ALD and in-situ sputtering.

[0132] More specifically, Fig. 6A Structure 600 is shown including gap 604 in substrate 606 and silicon dioxide layer 608 deposited over substrate 606. Substrate 606 may represent any suitable structure in which gap 604 may be formed, such as a 3D NAND die stack, a 3D DRAM structure, or a 3D NOR structure.

[0133] Figure 6B The structure 600 is shown after performing ALD and in-situ sputtering simultaneously. Films 610A, 610B are deposited as a liner over gap 604 and layer 608. Film 610A represents a portion of the film deposited over gap 604. Film 610B represents a portion of the film deposited over layer 608. Further, a bevel 614 is formed by in-situ sputtering. Films 610A, 610B may include any suitable material that may be deposited using ALD. Exemplary films include silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and metal oxides.

[0134] Figure 6C The structure 600 is shown after further simultaneous ALD and in-situ sputtering. Due to the additional ALD cycle with in-situ sputtering, Figure 6C The ratio of the films 610A and 610B Figure 6BFurther, the bevel 614 has grown to cover a larger portion of the films 610A and 610B. Figure 5C In contrast to the example depicted in , less or no material is removed from layer 608. Bevel 614 includes a bevel angle 620 that can be based on a preferred angle of sputtering. The profile of bevel 614 can be controlled by controlling process conditions such as temperature, pressure, gas composition (including hydrogen concentration), and RF power. In some examples, the bevel angle includes an angle between 45° and 90°. In more specific examples, the bevel angle can include an angle between 75° and 89°. In some examples, a mixture of simultaneous deposition / sputtering and in-situ sputtering after deposition can be performed to produce the desired structure.

[0135] The ALD process including in-situ sputtering may be performed using any suitable sequence of process steps. Figure 7 , 8 9 show exemplary methods 700, 800, and 900 for processing a substrate using ALD including in-situ sputtering. Methods 700, 800, and 900 may be performed using any suitable ALD tool configured for plasma processing, such as ALD tool 200.

[0136] first, Figure 7 A flow chart of an exemplary method 700 is shown, which includes one or more ALD cycles without sputtering 701 and one or more ALD cycles with sputtering 702. The method 700 includes placing a substrate in a processing chamber of an ALD tool at 704. The method 700 proceeds to 706 to determine whether to perform the ALD cycle with sputtering 702 or the ALD cycle without sputtering 701.

[0137] If sputter-free ALD film deposition 701 is to be performed, the method 700 proceeds to 710. The sputter-free ALD cycle 701 includes introducing one or more film precursors into the process chamber to adsorb the one or more film precursors on the substrate at 710. Suitable film precursors include one or more of a silicon-containing precursor, a molybdenum-containing precursor, a tungsten-containing precursor, an aluminum-containing precursor, a titanium-containing precursor, a tin-containing precursor, a zirconium-containing precursor, or a hafnium-containing precursor.

[0138] The sputter-free ALD cycle 701 further includes purging the process chamber at 712. The purge may be performed to remove excess film precursor from the process chamber. In some examples, the purge at 712 may be omitted. The sputter-free ALD cycle 701 further includes introducing reactants into the process chamber at 714. When depositing an oxide film, an oxidant may be introduced. In other examples, when depositing a nitride or carbide film, a nitrogen-containing reactant or a carbon-containing reactant may be introduced. When depositing an oxynitride film, an oxidant and a nitrogen-containing reactant may be introduced. In some examples, nitrogen and oxygen may be introduced in the form of the same molecule (e.g., N2O). When depositing an oxycarbide film, an oxidant and a carbon-containing reactant may be introduced. In some examples, at 716, the sputter-free ALD cycle 701 further includes introducing an inert gas with the reactants. Suitable inert gases include one or more of argon, nitrogen, helium, neon, krypton, or xenon.

[0139] The ALD cycle 701 without sputtering additionally includes forming a plasma at 718. Any suitable plasma source may be used, such as an inductively coupled plasma generator, a capacitively coupled plasma generator, or a microwave plasma generator. In some examples, forming the plasma may further include controlling an RF power source of the ALD tool to supply power to the paired electrodes to form the plasma. Examples of suitable RF power frequencies include 400 kHz, 13.56 MHz, 27 MHz, 60 Mz, and 90 MHz. Examples of suitable powers include powers between 0 watts and 1500 watts. In some examples, the RF power may be supplied at a plurality of different frequencies and / or powers. In some examples, the ALD cycle 701 without sputtering may use a relatively higher frequency RF power component at a relatively lower amplitude than the ALD cycle 702 with sputtering.

[0140] At 720, the sputter-free ALD cycle 701 includes reacting a reactant with an adsorbed precursor to form a film. In the example of forming an oxide film, a plasma may be used to react an oxidant with the adsorbed precursor. In the example of depositing a nitride film, a plasma may be used to react a nitrogen-containing reactant with the adsorbed precursor. In the example of depositing a carbide film, a plasma may be used to react a carbon-containing reactant with the adsorbed precursor. In the example of forming a nitrogen oxide, a plasma may be used to react an oxidant and a nitrogen-containing reactant with the adsorbed precursor. In some examples, a single molecule may provide nitrogen and oxygen (e.g., N2O). In the example of forming a carbide oxide, a plasma may be used to react an oxidant and a carbon-containing reactant with the adsorbed precursor. After reacting the precursors with the plasma at 720, the processing chamber is purged at 721.

[0141] If it is determined at 706 that the ALD cycle 702 with sputtering is to be performed, the method 700 proceeds to 730. At 730, the ALD cycle 702 with sputtering includes introducing one or more film precursors into the processing chamber so that the one or more film precursors are adsorbed on the substrate. The ALD cycle 702 with sputtering may then perform an optional sweep at 732. In some examples, the sweep at 732 may be omitted. The ALD cycle 702 with sputtering further includes introducing reactants into the processing chamber at 734. When depositing an oxide film, an oxidant may be introduced. In other examples, when depositing a nitride or carbide film, a nitrogen-containing reactant or a carbon-containing reactant may be introduced. When depositing an oxynitride film, an oxidant and a nitrogen-containing reactant may be introduced. In some examples, nitrogen and oxygen may be introduced as the same molecule (e.g., N2O). When depositing an oxycarbide film, an oxidant and a carbon-containing reactant may be introduced.

[0142] At 736, the ALD cycle 702 with sputtering includes introducing a sputtering gas comprising an inert gas (e.g., argon, nitrogen, helium, neon, krypton, or xenon). In some examples, the use of a relatively heavy inert gas can provide a higher sputtering rate than a relatively light inert gas. For example, the use of argon at 736 can provide a relatively higher sputtering rate than the use of helium. In some examples, at 737, the ALD cycle 702 with sputtering includes introducing a hydrogen-containing gas with the inert gas. Examples include hydrogen, ammonia, water, methane, or silane. As described above, the presence of hydrogen can provide an enhanced sputtering effect. Further, in some examples, the sputtering gas may include a reactant gas for film conversion. Exemplary reactant gases include oxidizing gases such as molecular oxygen, water vapor, ozone, and hydrogen peroxide.

[0143] The ALD cycle 702 with sputtering further includes forming a plasma comprising an inert gas at 738. In some examples, the plasma may further include the reactants introduced at 734 and / or the hydrogen introduced at 737. Forming the plasma at 738 may include, for example, controlling an RF power source to supply power to a pair of electrodes disposed in a processing chamber. Examples of suitable frequencies include 400 kHz, 13.56 MHz, 27 MHz, 60 Mz, and 90 MHz. Examples of suitable powers include powers between 0 watts and 1500 watts. In some examples, RF power may be supplied at a plurality of different frequencies and / or powers. In some examples, a first higher frequency RF power component may be used to form a plasma, while a second lower frequency RF power component may be used to enhance sputtering. Further, in some examples, the ALD cycle 702 with sputtering may utilize a relatively higher amplitude RF power compared to the ALD cycle 701 without sputtering.

[0144] At 740, the ALD cycle 702 with sputtering includes reacting precursors with reactants using plasma to form a film on a substrate, and sputtering the film using ions in the plasma to form angular surface features. The ALD cycle 702 with sputtering further includes optionally purging the process chamber at 741.

[0145] The processing conditions inside the processing chamber can be controlled in any suitable manner to form the desired angular surface features using ALD including in-situ sputtering. In some examples, a relatively low pressure can be used when performing the ALD cycle 702 with sputtering compared to the ALD cycle 701 without sputtering. In other examples, the ALD cycle 701 without sputtering and the ALD cycle 702 with sputtering can be performed at similar pressures. Exemplary pressures include a pressure of 8 Torr or less. In addition, the ALD cycle can be performed at any suitable temperature. In some examples, a substrate temperature in the range of 50°C to 1000°C can be used. Using a relatively high temperature can help achieve a relatively high sputtering rate. Similarly, the spacing between the substrate support and the processing chemical outlet configured as an electrode can be adjusted to control the sputtering rate. In some examples, the spacing can be in the range of 0.2 inches to 0.8 inches. In other examples, a spacing outside this range can be used.

[0146] After completing the ALD cycle without sputtering 701 or the ALD cycle with sputtering 702, it is determined whether additional cycles are to be performed at 750. If yes, the method 700 returns to 706. If no, the method 700 ends.

[0147] The method 700 may include any suitable number and sequence of ALD cycles 701 without sputtering and ALD cycles 702 with sputtering. Using a greater number of ALD cycles may deposit a thicker film than using a lesser number of ALD cycles. Further, performing a relatively greater proportion of ALD cycles 702 with sputtering may provide a relatively better sputtering effect on the film. In some examples, the ratio of ALD cycles 701 without sputtering to ALD cycles 702 with sputtering may be in a range of 1:20 to 20:1. In various examples, the ratio of ALD cycles 701 without sputtering to ALD cycles 702 with sputtering may be adjusted to achieve a selected profile of an angular surface feature, such as a selected recess depth, a selected recess angle, or a selected bevel angle.

[0148] Figure 8A flow chart of another exemplary method 800 for performing ALD including in-situ sputtering is shown. In contrast to method 700, method 800 includes a sputter-free ALD cycle 801 and a separate sputtering cycle 802 without deposition. At 804, method 800 includes placing a substrate in a process chamber of a processing tool. Method 800 further includes performing one or more sputter-free ALD cycles 801 to deposit a film on the substrate.

[0149] At 810, the sputter-free ALD cycle 801 includes introducing one or more film precursors into the processing chamber so that the one or more film precursors are adsorbed on the substrate. Suitable films include films of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and metal oxides. Any suitable precursor or combination of precursors may be used, such as those discussed above. The sputter-free ALD cycle 801 further includes sweeping the processing chamber at 812. In some examples, the sweep at 812 may be omitted. At 814, the method 800 includes introducing reactants into the processing chamber. When depositing an oxide film, an oxidant may be introduced. When depositing a nitride or carbide film, a nitrogen-containing reactant or a carbon-containing reactant may be introduced. When depositing a nitride oxide film, an oxidant and a nitrogen-containing reactant may be introduced. In some examples, nitrogen and oxygen may be introduced as the same molecule (e.g., N2O). When depositing a carbide oxide film, an oxidant and a carbon-containing reactant may be introduced. In some examples, the sputter-free ALD cycle 801 further includes introducing an inert gas with the reactants at 816. Suitable inert gases include argon, nitrogen, helium, neon, krypton, and xenon. The sputter-free ALD cycle 801 additionally includes forming a plasma at 818. At 820, the sputter-free ALD cycle 801 includes reacting the one or more film precursors with the reactants to form a film layer on the substrate. After reacting the precursors with the reactants using the plasma at 820, the processing chamber is purged at 821.

[0150] As indicated at 822, the sputter-free ALD cycle 801 may be repeated any suitable number "X" times. After performing the one or more sputter-free ALD cycles 801, method 800 proceeds to 830 and performs a sputtering cycle 802. Sputtering cycle 802 allows in-situ sputtering of the film to be performed separately from the sputter-free ALD cycle 801. Any suitable sputtering gas may be used. At 830, method 800 includes introducing an inert gas into the processing chamber for use as a sputtering gas. Any suitable inert gas may be used, such as argon, nitrogen, helium, neon, krypton, or xenon. In some examples, at 832, sputtering cycle 802 includes introducing a hydrogen-containing gas with the inert gas. As described above, the presence of hydrogen may help achieve a relatively high sputtering rate compared to examples in which hydrogen is omitted. Further, in some examples, the sputtering gas may include a reactant gas for film conversion. Exemplary reactant gases include oxidizing gases, such as molecular oxygen, water vapor, ozone, and hydrogen peroxide.

[0151] Continuing, the sputtering cycle 802 further includes forming a plasma at 834 and sputtering the film using ions in the plasma to form angular surface features in the film. Forming the plasma at 834 may include controlling an RF power source to supply power to a pair of electrodes disposed in a processing chamber. Examples of suitable frequencies include 400 kHz, 13.56 MHz, 27 MHz, 60 Mz, and 90 MHz. Examples of suitable powers include powers between 0 watts and 1500 watts. As described above, the RF power may be supplied at a plurality of different frequencies and / or powers. In some examples, the sputtering cycle 802 may use a relatively high-frequency RF power component of a relatively high amplitude to form the plasma at 834 compared to the ALD cycle 801 without sputtering. Further, the sputtering cycle 802 may use a combination of a low-frequency RF power component and a high-frequency RF power component. As described above, the relative amplitude and / or use of the low-frequency RF power component may help increase the sputtering rate during the sputtering cycle 802. After extinguishing the plasma, the sputtering cycle 802 optionally includes purging the processing chamber at 835.

[0152] Conditions within the processing chamber may be adjusted to control the amount of sputtering during the sputtering cycle 802. In some examples, performing the sputtering cycle 802 at a relatively low pressure may help achieve a relatively high sputtering rate at 834. In some examples, the sputtering cycle 802 may be performed while maintaining a pressure of 8 Torr or less. In other examples, any other suitable pressure may be used. In some examples, a relatively low pressure may be used when performing the sputtering cycle 802 compared to the ALD cycle 801 without sputtering. In some examples, the ALD cycle 801 without sputtering and the sputtering cycle 802 may be performed at similar pressures. In addition, the sputtering cycle 802 may be performed at any suitable temperature. In some examples, a substrate temperature in the range of 50° C. to 1000° C. may be used. In some examples, using a relatively high temperature may help achieve a relatively high sputtering rate at 834. Further, the spacing between the process chemical outlet and the substrate support electrode may be adjusted. In some examples, the spacing may be in the range of 0.2 inches to 0.8 inches. In other examples, a spacing outside of this range may be used. A relatively smaller spacing may help achieve a relatively higher sputtering rate at 834 compared to a relatively larger spacing.

[0153] Any suitable sputtering duration may be used at 834. In some examples, sputtering cycle 802 may include a sputtering duration in the range of 10 seconds to 200 seconds. In other examples, durations outside of this range may be used.

[0154] In some examples, a final sputtering cycle (e.g., sputtering cycle 802) may be performed to modify the profile of the angular surface features. For example, multiple ALD cycles 801 without sputtering may be used, followed by a sputtering cycle 802 to deposit a film over the gap and form angular surface features in the film. Next, a final sputtering cycle may be performed to modify the angular surface features. In the specific example of a recess, the final sputtering cycle may be used to modify the recess angle of the recess and / or form a more rounded recess. In some examples, performing a final sputtering cycle may help achieve a relatively wide recess angle. In some examples, the recess angle may include an angle of ≥60°. In some examples, the final sputtering cycle may be used to increase the recess angle to ≥80°, ≥90°, or ≥95°.

[0155] After completing the sputtering cycle 802, the method 800 proceeds to 850 and determines whether additional cycles are to be performed. If "yes", the method 800 returns to 810 and begins a non-sputtering ALD cycle 801. If additional cycles are not to be performed, the method 800 ends.

[0156] The method 800 may include any suitable number of sputter-free ALD cycles 801 and sputtering cycles 802. Performing a greater number of sputter-free ALD cycles 801 may facilitate depositing relatively thicker films. Further, the ratio of the sputter-free ALD cycles 801 to the sputtering cycles 802 may be adjusted to achieve a selected degree of sputtering. In various examples, the ratio of the sputter-free ALD cycles 801 to the sputtering cycles 802 may be in a range of 1:1 to 1:20, in a range of 1:1 to 1:100, in a range of 1:1 to 1:1000, or in a range of 1:1 to 1:5000. The ratio of the sputter-free ALD cycles 801 to the sputtering cycles 802 and / or the sputtering duration of the sputtering cycles 802 may be adjusted to achieve a selected profile of an angular surface feature. Examples include a selected recess depth, a selected recess angle, or a selected bevel angle.

[0157] Fig. 9 A flow chart of an exemplary method 900 for performing an ALD cycle without sputtering 901, an ALD cycle with sputtering 902, and a sputtering cycle separate from the ALD cycle 903 is shown. At 902, the method 900 includes placing a substrate in a processing chamber of an ALD tool configured to perform sputtering.

[0158] The method 900 includes placing a substrate in a processing chamber of an ALD tool at 904. The method 900 then proceeds to 906, where it is determined whether to perform an ALD cycle 902 with sputtering or an ALD cycle 901 without sputtering. As described above, the ALD cycle may be performed to deposit any suitable film on the substrate. Suitable films include films of silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and metal oxides. Any suitable precursor or combination of precursors may be used, such as those discussed above.

[0159] The sputter-free ALD cycle 901 is equivalent to the sputter-free ALD cycle 801 and the sputter-free ALD cycle 701. At 910, the sputter-free ALD cycle 901 includes introducing one or more film precursors into the processing chamber so that the one or more film precursors are adsorbed on the substrate. The sputter-free ALD cycle 901 further includes purging the processing chamber at 912. In some examples, the purge at 912 can be omitted. The sputter-free ALD cycle 901 further includes introducing reactants into the processing chamber at 914. When depositing an oxide film, an oxidant can be introduced. In other examples, when depositing a nitride or carbide film, a nitrogen-containing reactant or a carbon-containing reactant can be introduced. When depositing an oxynitride film, an oxidant and a nitrogen-containing reactant can be introduced. In some examples, nitrogen and oxygen can be introduced as the same molecule (e.g., N2O). When depositing an oxycarbide film, an oxidant and a carbon-containing reactant can be introduced. In some examples, the sputter-free ALD cycle 901 further includes introducing an inert gas with the reactants at 916. The sputter-free ALD cycle 901 additionally includes forming a plasma at 918. The sputter-free ALD cycle 901 includes reacting one or more film precursors with the reactants to form a film layer on the substrate at 920. After reacting the precursors with the reactants using the plasma at 920, the process chamber can be optionally purged at 921.

[0160] On the other hand, if it is determined at 906 that an ALD cycle 902 with sputtering is to be performed, the method 900 proceeds to 930. At 930, the ALD cycle 902 with sputtering includes introducing one or more film precursors into the processing chamber to adsorb the one or more film precursors on the substrate. The ALD cycle 902 with sputtering may then perform an optional sweep at 932. At 934, the method 900 includes introducing reactants into the processing chamber. When depositing an oxide film, an oxidant may be introduced. When depositing a nitride or carbide film, a nitrogen-containing reactant or a carbon-containing reactant may be introduced. When depositing an oxynitride film, an oxidant and a nitrogen-containing reactant may be introduced. In some examples, nitrogen and oxygen may be introduced as the same molecule (e.g., N2O). When depositing an oxycarbide film, an oxidant and a carbon-containing reactant may be introduced.

[0161] At 936, the ALD cycle 902 with sputtering includes introducing a sputtering gas comprising an inert gas. In some examples, at 937, the ALD cycle 902 with sputtering includes introducing a hydrogen-containing gas along with the inert gas. As described above, the presence of hydrogen can provide an enhanced sputtering effect. Further, in some examples, the sputtering gas may include a reactant gas for film conversion. Exemplary reactant gases include oxidizing gases, such as molecular oxygen, water vapor, ozone, and hydrogen peroxide. The ALD cycle 902 with sputtering further includes forming a plasma comprising an inert gas at 938. At 940, the ALD cycle 902 with sputtering includes reacting a precursor with a reactant using a plasma to form a film on a substrate, and sputtering the film using ions in the plasma to form angular surface features. The ALD cycle 902 with sputtering further includes optionally purging the processing chamber at 941.

[0162] The ALD cycle may be repeated any suitable number of times, as indicated at 942. Further, the ALD cycle 901 without sputtering and the ALD cycle 902 with sputtering may be performed in any suitable order.

[0163] After performing an appropriate number of ALD cycles, method 900 may proceed from 942 to 950 and perform a sputtering cycle 903. Sputtering cycle 903 may be equivalent to sputtering cycle 802. At 950, sputtering cycle 903 includes introducing a sputtering gas comprising an inert gas into the processing chamber. In some examples, at 952, sputtering cycle 903 includes introducing a hydrogen-containing gas with the inert gas. Further, in some examples, the sputtering gas may include a reactant gas for film conversion. Sputtering cycle 903 further includes forming a plasma at 954 and sputtering the film using ions in the plasma to form angular surface features in the film. After extinguishing the plasma, sputtering cycle 903 includes optionally purging the processing chamber at 955.

[0164] After completing the sputtering cycle 903, the method 900 proceeds to 960 and determines whether to perform additional ALD cycles. If "yes", the method 900 returns to 906 and determines whether to perform an ALD cycle without sputtering 901 or an ALD cycle with sputtering 902. If no additional cycles are performed, the method ends.

[0165] As described above, conditions within the processing chamber may be adjusted to control the amount of sputtering during the ALD cycle 902 with sputtering and the sputtering cycle 903. In some examples, a relatively low pressure may help achieve a relatively high sputtering rate at 940 and / or 954. In some examples, sputtering may be performed while maintaining a pressure of 8 Torr or less. In other examples, any other suitable pressure may be used. In some examples, a relatively low pressure may be used when performing the ALD cycle 902 with sputtering or the sputtering cycle 903 compared to the ALD cycle 901 without sputtering. In addition, the method 900 may be performed at any suitable temperature. In some examples, a substrate temperature in the range of 50° C. to 1000° C. may be used. In some examples, using a relatively high temperature may help achieve a relatively high sputtering rate at 940 and / or 954. Further, the spacing between the process chemical outlet and the substrate support may be adjusted, wherein a relatively small spacing may help achieve a relatively high sputtering rate compared to a larger spacing. In some examples, the spacing may be in the range of 0.2 inches to 0.8 inches. In other examples, spacing outside of this range may be used.

[0166] Forming the plasma at 920, 940, and 954 may include controlling the RF power source to supply power at any suitable frequency and any suitable power. Examples of suitable frequencies include 400 kHz, 13.56 MHz, 27 MHz, 60 Mz, and 90 MHz. Examples of suitable powers include powers between 0 watts and 1500 watts. As described above, the RF power may be supplied at a plurality of different frequencies and / or powers. In some examples, the ALD cycle 902 with sputtering and the sputtering cycle 903 may each use a relatively high-frequency RF power component of a relatively high amplitude to form a plasma compared to the ALD cycle 901 without sputtering. Further, the ALD cycle 902 with sputtering and the sputtering cycle 903 may each optionally use a combination of a low-frequency RF power component and a high-frequency RF power component. As described above, the relatively high amplitude and / or use of a low-frequency RF power component may help enhance in-situ sputtering.

[0167] In some examples, sputtering the film at 940 and 954 includes forming a recess above the void. In some examples, sputtering can help reduce the closure depth of the void and increase the thickness of the portion of the film above the void. In some examples, sputtering can include forming a bevel in the liner covering the gap. In some examples, a final sputtering cycle (e.g., sputtering cycle 903) can be performed to modify the profile of the angular surface features. For example, repeating the ALD cycle 901 without sputtering and the ALD cycle 902 with sputtering can be used to deposit a film above the gap and form a recess in the film. Then, the sputtering cycle 903 can be performed to modify the concave angle of the recess and / or form a more rounded recess. In some examples, performing the final sputtering cycle can help achieve a relatively wide concave angle. In some examples, the concave angle may include an angle of ≥60°. In some examples, the final sputtering cycle can be used to increase the concave angle to ≥80°, ≥90°, or ≥95°.

[0168] Thus, the disclosed examples may facilitate in-situ sputtering within an ALD tool to form angled substrate features. Performing in-situ sputtering and film deposition in an ALD tool may allow the film to partially fill the gap and avoid forming sharp reentrant corners, and push the pinch-off depth to a suitable depth in the gap for subsequent processing. Performing in-situ sputtering in an ALD tool may also allow the formation of other angular surface features, such as forming an angled liner within the gap. Such structures may be formed without repeatedly moving the substrate between the ALD tool and the sputtering tool. This may allow the disclosed examples of angular surface features to be efficiently formed in an ALD tool.

[0169] In some embodiments, the methods and processes described herein may be incorporated into a computing system of one or more computing devices. Specifically, such methods and processes may be implemented as a computer application or service, an application programming interface (API), a library, and / or other computer program products.

[0170] Fig.10 A non-limiting embodiment of a computing system 1000 is schematically shown that can perform one or more of the above methods and processes. The computing system 1000 is shown in simplified form. The computing system 1000 can take the form of one or more personal computers, workstations, computers integrated with substrate processing tools, and / or network accessible server computers.

[0171] The computing system 1000 includes a logic machine 1002 and a storage machine 1004. The computing system 1000 may optionally include a display subsystem 1006, an input subsystem 1008, a communication subsystem 1010, and / or Fig.10 Controller 230 is an example of computing system 1000 .

[0172] Logic machine 1002 includes one or more physical devices configured to execute instructions. For example, the logic machine can be configured to execute instructions that are part of one or more applications, services, programs, routines, libraries, objects, components, data structures, or other logical constructs. Such instructions can be implemented to perform tasks, implement data types, transform the state of one or more components, achieve technical effects, or otherwise achieve desired results.

[0173] The logic machine may include one or more processors configured to execute software instructions. Additionally or alternatively, the logic machine may include one or more hardware or firmware logic machines configured to execute hardware or firmware instructions. The processor of the logic machine may be single-core or multi-core, and the instructions executed thereon may be configured for sequential, parallel and / or distributed processing. The various components of the logic machine may optionally be distributed in two or more separate devices that may be remotely located and / or configured for coordinated processing. Various aspects of the logic machine may be virtualized and executed by a remotely accessible networked computing device configured in a cloud computing configuration.

[0174] The storage machine 1004 includes one or more physical devices configured to store instructions 1012 that can be executed by a logic machine to implement the methods and processes described herein. When such methods and processes are implemented, the state of the storage machine 1004 can be transformed—for example, to store different data.

[0175] The storage machine 1004 may include removable and / or built-in devices. The storage machine 1004 may include optical storage (e.g., CD, DVD, HD-DVD, Blu-ray disc, etc.), semiconductor storage (e.g., RAM, EPROM, EEPROM, etc.), and / or magnetic storage (e.g., hard disk drive, floppy disk drive, tape drive, MRAM, etc.). The storage machine 1004 may include volatile, non-volatile, dynamic, static, read / write, read-only, random access, sequential access, location addressable, file addressable, and / or content addressable devices.

[0176] It should be understood that storage 1004 includes one or more physical devices. However, alternatively, aspects of the instructions described herein may be propagated via a communication medium (eg, electromagnetic signals, optical signals, etc.) that is not held for a finite duration by a physical device.

[0177] Aspects of the logic machine 1002 and the storage machine 1004 may be integrated together into one or more hardware logic components. For example, such hardware logic components may include field programmable gate arrays (FPGAs), program and application specific integrated circuits (PASIC / ASIC), program and application specific standard products (PSSP / ASSP), systems on chips (SOCs), and complex programmable logic devices (CPLDs).

[0178] When included, display subsystem 1006 can be used to present a visual representation of the data stored by storage machine 1004. This visual representation can take the form of a graphical user interface (GUI). Since the methods and processes described herein change the data held by the storage machine, and therefore change the state of the storage machine, the state of display subsystem 1006 can also be converted to visually represent the change of the underlying data. Display subsystem 1006 can include one or more display devices using almost any type of technology. Such display devices can be combined with logic machine 1002 and / or storage machine 1004 in a shared cabinet (a shared enclosure), or such display devices can be peripheral display devices.

[0179] When included, the input subsystem 1008 may include or may interact with one or more user input devices (e.g., a keyboard, mouse, or touch screen). In some embodiments, the input subsystem may include or interact with selected natural user input (NUI) components. Such components may be integrated or peripheral, and the conversion and / or processing of input actions may be handled on-board or off-board. Exemplary NUI components may include microphones for voice and / or sound recognition, and infrared, color, stereo, and / or depth cameras for machine vision and / or gesture recognition.

[0180] When included, the communication subsystem 1010 can be configured to communicatively couple the computing system 1000 with one or more other computing devices. The communication subsystem 1010 can include wired and / or wireless communication devices compatible with one or more different communication protocols. As non-limiting examples, the communication subsystem can be configured to communicate using a wireless telephone network, or a wired or wireless local area network or wide area network. In some embodiments, the communication subsystem can allow the computing system 1000 to send messages to other devices and / or receive messages from other devices over a network such as the Internet.

[0181] It should be understood that the configuration and / or method described herein is exemplary in nature, and these specific one or more embodiments or examples should not be considered restrictive, because many variations are possible. The specific routine or method described herein can represent one or more of any number of processing strategies. Therefore, the various actions shown and / or described can be performed in the order shown and / or described, in other orders, in parallel or omitted. Similarly, the order of the above-mentioned process can be changed.

[0182] The subject matter of the present disclosure includes all novel and nonobvious combinations and subcombinations of the various processes, systems and configurations, and other features, functions, acts, and / or properties disclosed herein, as well as any and all equivalents thereof.

Claims

1. A method for forming an angular surface feature on a substrate in an integrated circuit manufacturing process, the method comprising: placing the substrate in a process chamber of an atomic layer deposition (ALD) tool; controlling the ALD tool to form a film on the substrate by performing one or more ALD cycles; as well as The ALD tool is controlled to sputter the film to form the angular surface features.

2. The method of claim 1 , wherein an ALD cycle in the one or more ALD cycles comprises: introducing a film precursor into the process chamber so that the film precursor is adsorbed on the substrate, cleaning the processing chamber, introducing an oxidant into the process chamber, and The film precursor is reacted with the oxidant by forming a plasma containing the oxidant to form the film.

3. The method of claim 2, wherein controlling the ALD tool to sputter the film comprises: The film is sputtered within the ALD cycle using ions in the plasma.

4. The method of claim 3, further comprising controlling the ALD tool to form the plasma using a lower frequency component and a higher frequency component.

5. The method of claim 2, wherein controlling the ALD tool to sputter the film comprises: A sputtering cycle is performed in the ALD tool separate from the one or more ALD cycles. The method of claim 1 , wherein the angled surface features include recesses above voids.

7. The method of claim 1, wherein the angled surface feature comprises a slope in a lining of the gap.

8. The method of claim 1 , wherein controlling the ALD tool to sputter the film comprises: A plasma is formed comprising an inert gas and hydrogen.

9. The method of claim 1 , wherein controlling the ALD tool to sputter the film comprises: The processing tool is controlled to heat the substrate heater to a temperature in the range of 50°C to 1000°C.

10. The method of claim 1 , wherein controlling the ALD tool to sputter the film comprises: The ALD tool is controlled to maintain a pressure within the processing chamber at 8 Torr or less during sputtering.

11. An atomic layer deposition (ALD) tool comprising: Processing room; a substrate support disposed in the processing chamber; a membrane precursor source, which includes a membrane precursor; a reactant gas source comprising reactants; an inert gas source comprising an inert gas; flow control hardware configured to control the flow of film precursors, reactants, and inert gases into the process chamber; a radio frequency power source operable to form a plasma in the processing chamber; as well as A controller configured to: controlling the flow control hardware and the RF power source to perform one or more ALD cycles to form a film on a substrate placed on the substrate support; as well as The flow control hardware and the RF power source are controlled to perform one or more sputtering cycles to sputter the film to form angular surface features, the one or more sputtering cycles being separate from the one or more ALD cycles.

12. The ALD tool of claim 11 , further comprising a hydrogen source comprising hydrogen gas, wherein the controller is further configured to control the flow control hardware to introduce the inert gas and the hydrogen gas into the processing chamber, and to control the RF power source to form a plasma comprising the inert gas and the hydrogen gas.

13. The ALD tool of claim 11, wherein the RF power source is configured to supply RF power comprising a lower frequency component and a higher frequency component.

14. The ALD tool of claim 11, further comprising an exhaust system, and the controller is further configured to control the flow control hardware and the exhaust system to maintain the pressure within the processing chamber at 8 Torr or less during the one or more sputtering cycles.

15. The ALD tool of claim 11, wherein the controller is further configured to sputter the film during at least one ALD cycle of the one or more ALD cycles.

16. The ALD tool of claim 11, further comprising a substrate heater, wherein the controller is configured to heat the substrate heater to a temperature in a range of 50°C to 1000°C.

17. The ALD tool of claim 11, wherein the controller is further configured to purge the chamber after controlling the RF power source to extinguish the plasma.

18. The ALD tool of claim 11, wherein the flow control hardware is configured to introduce the inert gas into the process chamber through a process chemistry outlet that is spaced apart from the substrate by a spacing in a range of 0.2 inches to 0.8 inches.

19. An atomic layer deposition (ALD) tool comprising: Processing room; a substrate support disposed in the processing chamber; one or more membrane precursor sources comprising one or more membrane precursors; one or more reactant sources comprising one or more reactants; an inert gas source comprising an inert gas; flow control hardware configured to control the flow of the one or more film precursors, the one or more reactants, and the inert gas into the process chamber; a radio frequency power source and an electrode pair configured to form a plasma in the processing chamber; as well as A controller configured to: The flow control hardware and the RF power source are controlled to perform one or more ALD cycles with sputtering to form a film on a substrate placed on the substrate support and to form angular surface features of the film.

20. The ALD tool of claim 19, wherein the one or more reactants comprises a nitrogen-containing precursor.

21. The ALD tool of claim 19, wherein the one or more reactants comprises an oxidant.

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