Doped diamond thin films and their preparation methods and apparatus

Abstract

This application provides a doped diamond thin film and its preparation method and apparatus. The preparation apparatus includes a first body, a second body, a heating component, a conveying component, a vacuum component, and a laser emitting component. The first body has a first cavity for placing a substrate and introducing a reactive gas. The heating component is located in the first cavity. The second body has a second cavity, and the first and second cavities can be switched between connected and isolated states by a switching valve. The conveying component is located in the second cavity and is used to transport the doped target material from the second cavity to the first cavity or from the first cavity to the second cavity when the first and second cavities are connected. The vacuum component is used to evacuate the first cavity and / or the second cavity. The laser emitting component is used to emit a laser beam toward the doped target material located in the first cavity. The technical solution of this application aims to achieve the preparation of multi-element doped diamond thin films.

Description

Technical Field

[0001] This application relates to the field of diamond thin film preparation technology, and in particular to a doped diamond thin film and its preparation method and apparatus. Background Technology

[0002] Doped diamond films are created by doping diamond films with other elements to alter their properties. Hot-filament chemical vapor deposition (HFCVD) is a common technique for preparing doped diamond films; however, this method often only allows for the doping of a single element, which is not conducive to the modification of the doped diamond film. Summary of the Invention

[0003] This application provides a doped diamond thin film and its preparation method and apparatus, aiming to achieve the preparation of doped diamond thin films with multiple element doping.

[0004] In a first aspect, embodiments of this application provide an apparatus for preparing a doped diamond thin film, comprising:

[0005] The first body has a first cavity, which is used to place the substrate and to introduce the reaction gas;

[0006] The first body has a first cavity, which is used to place the substrate and to access the reaction gas;

[0007] A heating assembly is disposed in the first cavity;

[0008] The second body has a second cavity, and a switching valve is provided between the first body and the second body. The switching valve is used to switch the first cavity and the second cavity between connected and isolated states.

[0009] A transport assembly is disposed in the second cavity, the transport assembly being used to transport the doped target material from the second cavity to the first cavity or from the first cavity to the second cavity when the first cavity and the second cavity are in communication;

[0010] Vacuum assembly for evacuating the first cavity and / or the second cavity;

[0011] A laser emitting assembly for emitting a laser toward the doped target located within the first cavity.

[0012] Optionally, the conveying assembly includes:

[0013] The first support member is disposed in the second cavity and has a plurality of support portions for supporting the doped target material;

[0014] An end effector for connection to the doped target;

[0015] A first drive assembly, at least partially disposed in the second cavity, is drively connected to the end effector and is used to drive the end effector to move to the first cavity.

[0016] Optionally, the conveying assembly further includes:

[0017] The second drive assembly is at least partially disposed in the second cavity and is drively connected to the first carrier. The second drive assembly is used to drive the first carrier to move so that one of the plurality of carrier parts moves to a first preset position.

[0018] Optionally, the first driving component is used to drive the end effector to move along a first direction, the end effector being located on one side of the first carrier along a second direction, the first direction being different from the second direction;

[0019] The transport component also includes:

[0020] A third driving component is at least partially disposed in the second cavity. The third driving component is used to drive the doped target on the support portion at the first preset position to move in the opposite direction of the second direction to the second preset position, and to drive the doped target at the second preset position to move in the forward direction of the second direction to the support portion at the first preset position; the first direction is different from the second direction.

[0021] Optionally, each of the support portions is provided with a through hole penetrating the first support member on opposite sides along the second direction, the through hole being used to accommodate the doped target material;

[0022] The third drive component can pass through the through hole from the end away from the end effector to the end of the through hole near the end effector.

[0023] Optionally, a third body is provided between the first body and the second body. The third body has a channel, and the two ends of the channel are respectively connected to the first cavity and the second cavity. The third body is provided with the switch valve, which is used to close or open the channel.

[0024] Optionally, the preparation apparatus further includes a second support member disposed in the first cavity and located in the extension direction of the channel, the second support member being used to support the doped target.

[0025] Optionally, the first cavity is provided with a mesh structure, the mesh structure being used to filter substances generated by the doped target material under laser irradiation; and / or,

[0026] The first cavity is equipped with an electromagnetic component, which is used to generate an electromagnetic field to filter the substances produced by the doped target under laser irradiation.

[0027] Secondly, embodiments of this application also provide a method for preparing a doped diamond thin film. The doped diamond thin film is prepared using the same preparation apparatus as in the first aspect, and the preparation method includes:

[0028] Place the substrate in the first cavity;

[0029] The doped target is transported to the first cavity by the transport assembly, and the switching valve is controlled to isolate the first cavity and the second cavity from each other.

[0030] The first cavity is evacuated using the vacuum assembly;

[0031] The reactant gas is introduced into the first cavity, and the heating component is controlled to heat the reactant gas.

[0032] The laser emitting assembly is controlled to emit laser light toward the doped target material within the first cavity;

[0033] The second cavity is evacuated using the vacuum assembly;

[0034] Control the first cavity and the second cavity to be in a connected state;

[0035] The doped target material of the first cavity is transported to the second cavity by the transport assembly;

[0036] The other doped target is transported to the first cavity again by the transport assembly, and the switching valve is controlled to isolate the first cavity and the second cavity.

[0037] Thirdly, embodiments of this application also provide a doped diamond thin film, prepared by the preparation method described in the second aspect.

[0038] This application provides a method and apparatus for preparing a doped diamond thin film. In preparing the doped diamond thin film, a substrate is placed in a first cavity, a transport assembly is used to transport a doped target to the first cavity, a switching valve is controlled to isolate the first and second cavities, a vacuum assembly is used to evacuate the first cavity, a reaction gas is introduced into the first cavity, and a heating assembly is used to heat the reaction gas, causing it to decompose and generate carbon atoms. A laser emitting assembly is then controlled to emit a laser beam towards the doped target in the first cavity. Under laser irradiation, the doped target generates a dopant, which contains atoms or molecules of at least one doping element, carbon atoms, and a dopant. The first and second cavities are deposited on a substrate. A vacuum assembly is then used to evacuate the second cavity. A switching valve is then controlled to connect the first and second cavities. A transport assembly moves the doped target from the first cavity to the second cavity, and then moves a different doped target to the first cavity, thus replacing the doped target. The switching valve is then controlled to isolate the first and second cavities. A laser emitting assembly can then emit a laser beam towards the replaced doped target in the first cavity. Under laser irradiation, the doped target produces dopants containing atoms or molecules of different doping elements. These dopants precipitate on the substrate, resulting in a multi-element doped diamond film. Furthermore, during the fabrication process, the vacuum assembly evacuates the first cavity to reduce impurities, and the vacuum assembly evacuates the second cavity to minimize the impact on the environment of the first cavity during target replacement, thus facilitating the preparation of high-quality multi-element doped diamond films. Attached Figure Description

[0039] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0040] Figure 1 A left view of an apparatus for preparing a doped diamond thin film according to an embodiment of this application;

[0041] Figure 2 for Figure 1 A schematic cross-sectional view of the preparation apparatus along the AA direction;

[0042] Figure 3 for Figure 1 A schematic cross-sectional view of the preparation apparatus along the BB direction;

[0043] Figure 4 A right view of the preparation apparatus provided in the embodiments of this application;

[0044] Figure 5 This is a cross-sectional schematic diagram of another apparatus for preparing a doped diamond thin film provided in an embodiment of this application. Detailed Implementation

[0045] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0046] The flowchart shown in the attached diagram is for illustrative purposes only and does not necessarily include all content and operations / steps, nor does it necessarily have to be performed in the order described. For example, some operations / steps can be broken down, combined, or partially merged, so the actual execution order may change depending on the actual situation.

[0047] It should be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0048] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0049] Please refer to Figures 1 to 4 This application provides an apparatus for preparing a doped diamond thin film, including a first body 10, a second body 20, a heating component 30, a conveying component 40, a vacuum component (not shown), and a laser emitting component 50. The first body 10 has a first cavity 10a for placing a substrate and introducing a reaction gas. The heating component 30 is disposed in the first cavity 10a. The second body 20 has a second cavity 20a. A switching valve 100 is provided between the first body 10 and the second body 20, which switches the first cavity 10a and the second cavity 20a between connected and isolated states. The conveying component 40 is disposed in the second cavity 20a and is used to transport the doped target material from the second cavity 20a to the first cavity 10a or from the first cavity 10a to the second cavity 20a when the first cavity 10a and the second cavity 20a are connected. The vacuum component is used to evacuate the first cavity 10a and / or the second cavity 20a. The laser emitting assembly 50 is used to emit laser light toward a doped target located in the first cavity 10a.

[0050] The fabrication apparatus in this embodiment can use the heating component 30 to heat the reaction gas introduced into the first cavity 10a, and the carbon atoms generated by the decomposition of the reaction gas are deposited on the substrate. It can also use the transport component 40 to transport different doped targets to the first cavity 10a. The laser emitting component 50 emits lasers to the different doped targets in the first cavity 10a, so that the different doped targets obtain different dopants under laser irradiation. The dopants include, but are not limited to, plasma, gas and solid particles. Different dopants may contain atoms or molecules of different doping elements. Different dopants are deposited on the substrate to prepare a doped diamond film with multiple doping elements. Furthermore, the vacuum assembly connects the first cavity 10a and the second cavity 20a. By evacuating the first cavity 10a through the vacuum assembly, impurities within the first cavity 10a can be reduced, allowing the first cavity 10a to reach the environmental conditions required for the reaction. Similarly, by evacuating the second cavity 20a through the vacuum assembly, impurities within the second cavity 20a can be reduced. Therefore, when the doped target needs to be replaced using the transfer assembly 40, and the first cavity 10a and the second cavity 20a are switched to a connected state, the impact on the environment inside the first cavity 10a is minimal. This allows for the preparation of high-quality diamond films doped with multiple elements.

[0051] For example, when the fabrication apparatus is used to prepare doped diamond thin films, a substrate can be placed in the first cavity 10a, and multiple doped targets can be placed in the second cavity 20a. When the control valve 100 is opened to connect the first cavity 10a and the second cavity 20a, the transport component 40 located in the second cavity 20a can transport one of the multiple doped targets to the first cavity 10a. Then, the transport component 40 returns to its position within the second cavity 20a, and the control valve 100 is closed to isolate the first cavity 10a and the second cavity 20a. The vacuum component evacuates the first cavity 10a to achieve the required environmental conditions. Then, a reaction gas is introduced into the first cavity 10a, and the heating component 30 located in the first cavity 10a heats the reaction gas, causing it to decompose and generate carbon atoms. The laser emitting component 50 emits a laser beam toward the doped target in the first cavity 10a. Under laser irradiation, the doped target acquires a dopant, which contains at least one dopant. Atoms or molecules of heterogeneous elements, carbon atoms, and atoms or molecules of dopants can be deposited on the substrate. When it is necessary to dopant other elements, the second cavity 20a can be evacuated first through the vacuum assembly, and then the switching valve 100 can be controlled again to connect the first cavity 10a and the second cavity 20a. The transport assembly 40 can transport the doped target in the first cavity 10a to the second cavity 20a again, and then transport another doped target from the multiple doped targets in the second cavity 20a to the first cavity 10a to replace the doped target. When the transport assembly 40 returns to the state of being housed in the second cavity 20a, the switching valve 100 is controlled to close again to isolate the first cavity 10a and the second cavity 20a. The laser emitting assembly 50 emits laser again toward the replaced doped target in the first cavity 10a, so that the doped target is irradiated by the laser to obtain dopants. The dopants contain atoms or molecules of different doping elements than before. The dopants can be deposited on the substrate to obtain a doped diamond film doped with multiple elements.

[0052] Understandably, both the first cavity 10a and the second cavity 20a can switch between being connected to and isolated from the external environment. Specifically, when the heating component 30 heats the reaction gas to deposit carbon atoms on the substrate, and the laser emitting component 50 emits a laser towards the doped target of the first cavity 10a to deposit the dopant on the substrate, the first cavity 10a is isolated from the external environment. Alternatively, only one of the first cavity 10a and the external environment can be connected to the second cavity 20a, or both the first cavity 10a and the external environment can be isolated from the second cavity 20a.

[0053] For example, such as Figure 1As shown, the first main body 10 has a first opening 10b connecting the first cavity 10a and the external environment. A first movable door (not shown) is movably connected to the first main body 10. The first movable door can switch between a closed first opening 10b and an open first opening 10b, thereby switching the first cavity 10a and the external environment between a state of isolation and a state of connection. Specifically, when the first movable door is in the open first opening 10b state, the first cavity 10a and the external environment are connected through the first opening 10b. A preset component can be placed into or removed from the first cavity 10a through the first opening 10b. For example, a substrate can be placed into or removed from the first cavity 10a through the first opening 10b. Another example is that a heating assembly 30 can be installed into or removed from the first cavity 10a through the first opening 10b.

[0054] For example, such as Figure 4 As shown, the second body 20 has a second opening 20b connecting the second cavity 20a and the external environment. A second movable door is movably connected to the second body 20. The second movable door can switch between a closed second opening 20b and an open second opening 20b, thereby switching the second cavity 20a and the external environment between a state of isolation and a state of connection. Specifically, when the second movable door is in the open second opening 20b state, the second cavity 20a and the external environment are connected through the second opening 20b. A preset component can be placed into or removed from the second cavity 20a through the second opening 20b. For example, a doped target can be placed into or removed from the second cavity 20a through the second opening 20b. Similarly, a transport assembly 40 can be installed into or removed from the second cavity 20a through the second opening 20b.

[0055] It is worth noting that while the heating component 30 heats the reactant gas, the laser emitting component 50 emits laser light toward the doped target material in the first cavity 10a. Alternatively, when the heating component 30 stops heating the reactant gas after a period of time, the laser emitting component 50 emits laser light toward the doped target material in the first cavity 10a. In other words, the heating timing and time of the heating component 30 and the laser emitting component 50 can be adjusted according to the actual situation, and are not limited here.

[0056] For example, the first body 10 can be a laser protection body to prevent the laser from penetrating from the first cavity 10a to the outside of the first body 10 and irradiating the human body, thereby avoiding harm to the human body.

[0057] In some embodiments, such as Figure 1 As shown, the first body 10 is provided with a light-transmitting window, and the laser emitted by the laser emitting component 50 can enter the first cavity 10a through the light-transmitting window and irradiate the doped target.

[0058] In some embodiments, the preparation apparatus further includes a protective cover (not shown), which and the first body 10 enclose a receiving space. The laser emitting component 50 may be located within the receiving space to prevent the laser emitted by the laser emitting component 50 from coming into contact with the human body and causing harm to the human body during the transmission to the first body 10. At the same time, it can prevent the laser emitting component 50 from being affected by external interference, thus affecting the preparation quality.

[0059] For example, the laser emitting component 50 emits laser power that is adjustable to meet the irradiation conditions of different doped targets, while also being able to adjust the concentration of dopants.

[0060] For example, such as Figure 3 As shown, the heating assembly 30 includes a heating wire 31, which generates heat when energized to heat the reaction gas. Specifically, as... Figure 3 As shown, the heating assembly 30 includes four electrodes 32, which are symmetrically distributed in pairs. Two adjacent electrodes 32 are fitted with a wire frame 33, and the other two adjacent electrodes 32 are fitted with another wire frame 33. The two wire frames 33 are spaced apart, allowing the two ends of the heating wire 31 to be connected to the two wire frames 33 respectively, thus fixing the heating wire 31. Multiple heating wires 31 can be evenly spaced apart.

[0061] For example, the laser emitting assembly 50 is capable of emitting pulsed lasers toward the doped target of the first cavity 10a.

[0062] For example, such as Figure 2 As shown, the first cavity 10a is provided with a base 11, on which the substrate can be placed. Specifically, the base 11 can be a movable base 11, and the distance between the substrate on the base 11 and the hot wire 31 can be adjusted by controlling the movement of the base 11. For example, in the direction of gravity, the base 11 is located below the hot wire 31, and the base 11 can be a lifting base 11, and the distance between the substrate on the base 11 and the hot wire 31 can be adjusted by controlling the lifting of the base 11.

[0063] For example, the surface of the doped target to be irradiated by the laser is positioned opposite the deposition surface of the substrate. For instance, along the direction of gravity, the doped target is located above the substrate, and the laser emitting assembly 50 can emit a laser beam toward the lower surface of the doped target, allowing carbon atoms and dopants to be deposited on the upper surface of the substrate. The doped target can be located directly above the substrate, or it can be located diagonally above the substrate.

[0064] In some embodiments, such as Figure 2 and Figure 3As shown, the conveying assembly 40 includes a first carrier 41, an end effector 42, and a first drive assembly. The first carrier 41 is disposed in the second cavity 20a and has multiple carrier portions 411 for carrying the doped target. The end effector 42 is used to connect to the doped target. The first drive assembly is at least partially disposed in the second cavity 20a and is drively connected to the end effector 42 for driving the end effector 42 to move to the first cavity 10a. Understandably, since the first carrier 41 can carry multiple doped targets, the doped target to be transported to the first cavity 10a can be located in the second cavity 20a before the doped target is replaced. When the doped target in the first cavity 10a needs to be replaced, the switching valve 100 can be controlled to connect the first cavity 10a and the second cavity 20a. Then, the end effector 42 moves to the first cavity 10a under the drive of the first drive assembly, transporting the doped target in the first cavity 10a to the first carrier 41 in the second cavity 20a. Then, the end effector 42 can move another doped target on the first carrier 41 to the first cavity 10a under the drive of the first drive assembly. During this process, the second cavity 20a is always isolated from the external environment, saving the time required for switching doped targets and reducing the impact on the environment of the first cavity 10a.

[0065] For example, when the number of carrier parts 411 is greater than or equal to the number of doped targets, the second cavity 20a can be kept isolated from the external environment during the preparation of the doped diamond film. When the number of carrier parts 411 is less than the number of doped targets, the first cavity 10a can be isolated from the external environment, and the first cavity 10a and the second cavity 20a can be isolated from the external environment, so that the second cavity 20a is connected to the external environment. The doped target replaced from the first cavity 10a is taken out from the first carrier 41, and the doped target to be transported is placed on the first carrier 41. After the second cavity 20a is connected to the external environment, the second cavity 20a is evacuated by the vacuum assembly, and then the switching valve 100 is controlled to connect the first cavity 10a and the second cavity 20a to replace the doped target.

[0066] For example, the end effector 42 can adsorb the doped target material by vacuum adsorption, or, as... Figure 3 As shown, the end effector 42 includes a mechanical gripper. The end effector 42 can grip the doped target material by gripping it, and then move the doped target material to the first cavity 10a under the drive of the first drive component.

[0067] For example, the first drive assembly includes a first drive motor and a first transmission assembly, wherein the first drive motor is driveably connected to the end effector 42 via the first transmission assembly. For example, as... Figure 3 As shown, a slide rail is provided in the first cavity 10a, and the end effector 42 is slidably connected to the slide rail. The first transmission assembly may include a belt transmission assembly. The end effector 42 is connected to the first drive member through the belt transmission assembly, so that the first drive member can drive the end effector 42 to slide relative to the slide rail through the belt transmission assembly, so that the end effector 42 can transport the doped target material from the second cavity 20a to the first cavity 10a.

[0068] Furthermore, such as Figure 2 As shown, the conveying assembly 40 also includes a second driving assembly 43, which is at least partially disposed in the second cavity 20a. The second driving assembly 43 is driveably connected to the first carrier member 41 and is used to drive the first carrier member 41 to move, so that one of the plurality of carrier parts 411 moves to a first preset position. It can be understood that the second driving assembly 43 can drive the first carrier member 41 to move, so that any one of the plurality of carrier parts 411 of the first carrier member 41 moves to the first preset position, which is a preset position within the second cavity 20a. This allows the end effector 42 to retrieve the doped target material from a specific position in the second cavity 20a under the drive of the first driving assembly, or to move the doped target material from the first cavity 10a to the second cavity 20a and place it at a specific position. This limits the movement of the end effector 42, simplifies the transmission structure between the end effector 42 and the first driving assembly, and facilitates the movement of the end effector 42 between the first cavity 10a and the second cavity 20a.

[0069] For example, the second drive assembly 43 is used to drive the first carrier member 41 to rotate, or the second drive assembly 43 is used to drive the first carrier member 41 to slide. Specifically, the first drive assembly drives the first carrier member 41 to rotate, and a plurality of carrier parts 411 are arranged sequentially along the rotation direction of the first carrier member 41, so that the first drive assembly can drive any one of the plurality of carrier parts 411 to rotate to a first preset position.

[0070] Furthermore, such as Figure 2As shown, the first driving assembly is used to drive the end effector 42 to move along a first direction. The end effector 42 is located on one side of the first carrier 41 along a second direction, and the first direction is different from the second direction. The conveying assembly 40 also includes a third driving assembly 44, which is at least partially disposed in the second cavity 20a. The third driving assembly 44 is used to drive the doped target on the carrier portion 411 at the first preset position to move in the opposite direction of the second direction to the second preset position, and to drive the doped target at the second preset position to move in the forward direction of the second direction to the carrier portion 411 at the first preset position. Understandably, the second preset position is a preset position within the second cavity 20a, which is distinct from the first preset position. The third drive component 44 can drive the doped target on the support portion 411 at the first preset position to move in the reverse direction of the second direction to the second preset position. The end effector 42 can obtain the doped target from the second preset position and move in the reverse direction of the first direction to transport the doped target to the first cavity 10a. Alternatively, the end effector 42 can obtain the doped target from the first cavity 10a and then move in the forward direction of the first direction to move the doped target to the second preset position of the second cavity 20a. The third drive component 44 can obtain the doped target at the second preset position from the end effector 42 and then drive the doped target to move in the forward direction of the second direction to the support portion 411 at the first preset position. Thus, the end effector 42 only needs to move along the first direction, which limits the movement of the end effector 42, simplifies the transmission structure between the end effector 42 and the first drive assembly, and facilitates the movement of the end effector 42 between the first cavity 10a and the second cavity 20a.

[0071] For example, the first direction is as follows Figure 2 As shown in the Y0-Y1 direction, the second direction is as follows: Figure 2 As shown in the Z0-Z1 direction, the positive direction of the second direction can be as follows: Figure 1 As shown in the Z0 direction, the reverse direction of the second direction can be as follows: Figure 1 As shown in the Z1 direction.

[0072] In some embodiments, such as Figure 3 As shown, each support portion 411 is provided with a through hole 411a penetrating the first support member 41 on opposite sides along the second direction. The through hole 411a is used to accommodate the doped target. The third drive assembly 44 can pass through the through hole 411a from the end away from the end actuator 42 to the end of the through hole 411a near the end actuator 42. It can be understood that the doped target can be located in the through hole 411a of the support portion 411 to fix the doped target, while the third drive assembly 44 can pass through the through hole 411a to push the doped target to a second preset position along the second direction, so that the third drive assembly 44 can drive the doped target to move.

[0073] For example, the first carrier 41 can rotate as... Figure 2 When the first carrier 41 rotates in the second direction indicated by Z0-Z1, and the carrier portion 411 of the first carrier 41 rotates to the first preset position around the Z0-Z1 direction, the third drive assembly 44 can move in the opposite direction of the second direction, passing through the end of the through hole 411a away from the end actuator 42 to the end of the through hole 411a near the end actuator 42.

[0074] For example, such as Figure 3 As shown, the through hole 411a can be a stepped hole. The doped target is located at one end of the through hole 411a near the end actuator 42 and supported on the stepped surface of the through hole 411a. The third drive component 44 can pass through from one end of the through hole 411a away from the end actuator 42 to the one end of the through hole 411a near the end actuator 42, lift the doped target and drive the doped target to move in the opposite direction of the second direction to the second preset position.

[0075] For example, the third drive component 44 includes an electric actuator.

[0076] Furthermore, the third driving component 44 is provided with an annular portion for connection to the edge of the doped target. Understandably, the connection between the third driving component 44 and the edge of the doped target via the annular portion avoids impact or wear on the central structure of the doped target, allowing the laser emitting component 50 to emit laser light towards the center of the doped target, thereby facilitating the preparation of high-quality doped diamond films.

[0077] In some embodiments, such as Figure 2 and Figure 3 As shown, a third body 60 is provided between the first body 10 and the second body 20. The third body 60 has a channel 60a, the two ends of which are connected to the first cavity 10a and the second cavity 20a, respectively. The third body 60 is provided with a switching valve 100, which is used to close or open the channel 60a, so that the first cavity 10a and the second cavity 20a can switch between a state of isolation and a state of connection. It is understandable that the first cavity 10a and the second cavity 20a need to accommodate a large number of components, and the space required by the first cavity 10a and the second cavity 20a is large. By opening a channel 60a in the third body 60 between the first body 10 and the second body 20, the radial dimension of the channel 60a can be smaller than that of the first cavity 10a and the second cavity 20a, which can reduce the impact on the internal environment of the first cavity 10a when the first cavity 10a and the second cavity 20a are switched to a state of connection.

[0078] Understandably, the radial dimension of channel 60a can be adjusted according to the structure of the transport assembly 40. Specifically, as mentioned above, simplifying the transmission structure of the end effector 42 and the first drive assembly helps to reduce the size of the transmission structure of the end effector 42 and the first drive assembly, which in turn helps to reduce the radial dimension of channel 60a and reduce the impact on the environment of the first cavity 10a.

[0079] For example, the switching valve 100 includes a baffle valve, which, by controlling the movement of the baffle, enables the baffle to close or open the passage 60a.

[0080] In some embodiments, the preparation apparatus further includes a second carrier 12 disposed in the first cavity 10a, the second carrier 12 being used to carry the doped target material transported to the first cavity 10a.

[0081] For example, the second support member 12 has a support plate, and the end effector 42 can move the doped target to above the support plate along the direction of gravity and place the doped target on the support plate. Specifically, the support plate may be provided with clearance holes. When the support plate carries the doped target, the edge of the doped target can be supported on the support plate, and the middle part of the doped target is provided corresponding to the clearance holes so that the laser can pass through the clearance holes and irradiate the middle part of the doped target.

[0082] Furthermore, such as Figure 2 As shown, the second carrier 12 is located in the extending direction of the channel 60a. This facilitates the placement of the doped target on the second carrier 12 after the transport assembly 40 carries the doped target through the channel 60a, reducing the degree of freedom required for the transport assembly 40, simplifying the structure of the transport assembly 40, reducing the radial dimension of the channel 60a, and reducing the impact of the second cavity 20a on the environment inside the first cavity 10a.

[0083] In some embodiments, such as Figure 3 As shown, the first cavity 10a is provided with a mesh structure 13a. The mesh structure 13a is used to filter the material generated by the doped target under laser irradiation, so that the dopants that meet the preset conditions can pass through the mesh of the mesh structure 13a and be deposited on the substrate. Large particles and low-energy ions are blocked by the mesh structure 13a, so as to avoid the deposition of large particles and low-energy ions on the substrate and affect the quality of the doped diamond film.

[0084] For example, the shape of the grid includes, but is not limited to, circles, ellipses, squares, etc.

[0085] For example, the doped target, the mesh structure 13a, and the substrate are arranged sequentially along a predetermined direction. For instance, the doped target, the mesh structure 13a, and the substrate are arranged at intervals along the direction of gravity.

[0086] For example, the baffle has a mesh structure 13a and is disposed in the first cavity 10a. The baffle may be disposed adjacent to the second support member 12.

[0087] In some embodiments, the baffle is provided with a clearance hole so that the laser emitted by the laser emitting assembly 50 can pass through the clearance hole and irradiate the doped target, thereby preventing the baffle from blocking the laser.

[0088] For example, the mesh structure 13a may be arranged around the outer periphery of the clearance hole, and the mesh of the mesh structure 13a and the clearance hole are spaced apart.

[0089] Furthermore, the baffle is movably connected to the first body 10, and the baffle can move relative to the first body 10 within the first cavity 10a, so that the baffle can move relative to the doped target material disposed in the first cavity 10a, so that the baffle can switch between a blocking state and an avoidance state according to the actual situation. In the blocking state, the baffle blocks the doped target material, thereby filtering the material generated by the doped target material under laser irradiation. In the avoidance state, the doped target material is exposed, and the baffle does not filter the material generated by the doped target material under laser irradiation.

[0090] For example, the baffle is rotatably connected to the first body 10, or the baffle is slidably connected to the first body 10.

[0091] like Figure 5 As shown, in some embodiments, the first cavity 10a is further provided with an electromagnetic component 70. The electromagnetic component 70 is used to generate an electromagnetic field to filter the substances generated by the doped target under laser irradiation, so that dopants that meet the preset conditions can be deposited on the substrate, while large particles, low-energy ions and other impurities are blocked under the action of the electromagnetic field, so as to avoid large particles and low-energy ions from depositing on the substrate and affecting the quality of the doped diamond film.

[0092] For example, with the doped target and substrate located in the first cavity 10a being spaced apart, the electromagnetic component 70 may be located between the doped target and the substrate. The electromagnetic component 70 is spaced apart from the doped target and from the substrate.

[0093] For example, by controlling the current connected to the electromagnetic component 70, the magnetic field strength of the electromagnetic component 70 can be adjusted, thereby regulating the filtering effect of the electromagnetic component 70.

[0094] Furthermore, the electromagnetic component 70 includes an electromagnetic ring, which generates an electromagnetic field when energized.

[0095] For example, such as Figure 5 As shown, the second support member and the base can be located on opposite sides of the axial direction of the electromagnetic ring, so that the doped target and the substrate can be located on opposite sides of the axial direction of the electromagnetic ring. Specifically, the doped target and the substrate can be located on the axis of the electromagnetic ring.

[0096] For example, the opposite sides of the electromagnetic ring can be connected to the first body 10 via connecting rods, so that the electromagnetic ring can be disposed between the second support member and the base, and the electromagnetic ring is spaced apart from the second support member and the base.

[0097] This application also provides a method for preparing a doped diamond thin film. The doped diamond thin film is prepared using the preparation apparatus described above, and the preparation method includes the following steps:

[0098] Step S101: Place the substrate in the first cavity.

[0099] For example, step S101 can be completed by controlling the first movable door described above to be in the open first opening state, then placing the substrate into the first cavity, and then controlling the first movable door to be in the closed first opening state again.

[0100] Step S102: Transport a doped target to the first cavity using a transport assembly, and control the switching valve to isolate the first cavity from the second cavity.

[0101] Understandably, after the transport assembly delivers the doped target to the first cavity, the transport assembly returns to the state of being housed in the second cavity, so that the switching valve can be closed to isolate the first cavity and the second cavity.

[0102] Step S103: Evacuate the first cavity using the vacuum assembly.

[0103] Understandably, at this time, the external environment and the second cavity are isolated from the first cavity. The vacuum assembly is used to evacuate the first cavity, so that the first cavity reaches the environmental conditioning required for the reaction.

[0104] Step S104: Introduce the reaction gas into the first cavity and control the heating component to heat the reaction gas.

[0105] Understandably, the heating power and heating time of the heating element can be adjusted according to the actual situation.

[0106] Step S105: Control the laser emitting component to emit laser light toward the doped target in the first cavity.

[0107] It should be noted that step S104 can be executed first, followed by step S105, or steps S104 and S105 can be executed simultaneously, or step S105 can be executed first, followed by step S104.

[0108] Understandably, the power and duration of laser emission from the laser emitting component can be adjusted according to actual conditions.

[0109] Step S106: Evacuate the second cavity using the vacuum assembly.

[0110] Understandably, at this time, the external environment and the first cavity are both isolated from the second cavity.

[0111] Step S107: Control the switching valve to connect the first cavity and the second cavity.

[0112] Step S108: Transport the doped target material from the first cavity to the second cavity using a transport assembly.

[0113] Step S109: Transport another doped target to the first cavity again through the transport assembly, and control the switching valve to isolate the first cavity and the second cavity.

[0114] Step S110: Control the laser emitting assembly to emit laser light toward the doped target in the first cavity again.

[0115] Understandably, steps S106 to S110 can be repeated to replace the doped target material in the first cavity, achieve doping with multiple elements, and obtain a doped diamond film with multiple elements.

[0116] In this preparation method, a heating component heats the reactant gas introduced into the first cavity, causing carbon atoms generated from the decomposition of the reactant gas to deposit on the substrate. A transport component transports different doped targets to the first cavity, and a laser emitting component emits laser light onto the different doped targets within the first cavity, causing the dopants obtained from the different doped targets to deposit on the substrate under laser irradiation, thus preparing a multi-element doped diamond film. Furthermore, a vacuum component connects the first and second cavities. Vacuuming the first cavity with the vacuum component reduces impurities within it, achieving the desired environmental conditions. Similarly, vacuuming the second cavity with the vacuum component removes impurities. When the doped target needs to be replaced using the transport component, the first and second cavities remain connected, minimizing the impact of the second cavity on the environment within the first cavity. This process enables the preparation of high-quality multi-element doped diamond films.

[0117] For example, the vacuum assembly can evacuate the second assembly before each replacement of the doped target, that is, before controlling the switching valve to connect the first and second assemblies, to ensure that the impact on the environment of the first cavity is minimal when the first cavity and the second cavity are switched to the connected state.

[0118] For example, the vacuum assembly evacuates the second cavity so that the vacuum levels of the first and second cavities are equal.

[0119] Specifically, after preparation is completed, the supply of reaction gas to the first cavity is stopped, the heating component is controlled to stop heating the reaction gas, the heating component is cooled down, and the first cavity is kept in a vacuum state until the temperature inside the first cavity reaches room temperature, after which the substrate can be removed from the first cavity.

[0120] In some embodiments, before placing the substrate into the first cavity, a controllable valve can be closed to isolate the first and second cavities. A vacuum assembly is then used to evacuate the first cavity, followed by the introduction of the reaction gas into the first cavity, and the heating assembly is controlled to heat the reaction gas. This achieves a carbonization pretreatment of the heating assembly, thereby improving the quality of the prepared doped diamond film.

[0121] This application also provides a doped diamond film, prepared by the method described above. This doped diamond film can be doped with various elements, and the specific elements doped can be adjusted according to actual conditions.

[0122] It should be understood that the term "and / or" as used in this specification and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes such combinations. It should be noted that, herein, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or system that includes that element.

[0123] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments. The above descriptions are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

Claims

1. An apparatus for preparing a diamond-doped thin film, characterized in that, include: The first body has a first cavity, which is used to place the substrate and to access the reaction gas; A heating assembly is disposed in the first cavity; The second body has a second cavity, and a switching valve is provided between the first body and the second body. The switching valve is used to switch the first cavity and the second cavity between connected and isolated states. A transport assembly is disposed in the second cavity, the transport assembly being used to transport the doped target material from the second cavity to the first cavity or from the first cavity to the second cavity when the first cavity and the second cavity are in communication; Vacuum assembly for evacuating the first cavity and / or the second cavity; A laser emitting assembly for emitting a laser toward the doped target located within the first cavity; The transport component includes: The first support member is disposed in the second cavity and has a plurality of support portions for supporting the doped target material; An end effector for connection to the doped target; A first drive assembly, at least partially disposed in the second cavity, is drively connected to the end effector and is used to drive the end effector to move to the first cavity. The first drive assembly is used to drive the end effector to move along a first direction. The end effector is located on one side of the first support member along a second direction. The first direction is different from the second direction. A third driving component is at least partially disposed in the second cavity. The third driving component is used to drive the doped target on the support portion at the first preset position to move in the opposite direction of the second direction to the second preset position, and to drive the doped target at the second preset position to move in the forward direction of the second direction to the support portion at the first preset position; the first direction is different from the second direction.

2. The apparatus for preparing doped diamond thin films according to claim 1, characterized in that, The transport component also includes: The second drive assembly is at least partially disposed in the second cavity and is drively connected to the first carrier. The second drive assembly is used to drive the first carrier to move so that one of the plurality of carrier parts moves to a first preset position.

3. The apparatus for preparing doped diamond thin films according to claim 1, characterized in that, Each of the aforementioned support portions is provided with through holes penetrating the first support member on opposite sides along the second direction, the through holes being used to accommodate the doped target material; The third drive component can pass through the through hole from the end away from the end effector to the end of the through hole near the end effector.

4. The apparatus for preparing doped diamond thin films according to any one of claims 1-3, characterized in that, A third body is provided between the first body and the second body. The third body is provided with a channel, and the two ends of the channel are respectively connected to the first cavity and the second cavity. The third body is provided with a switch valve, which is used to close or open the channel.

5. The apparatus for preparing doped diamond thin films according to claim 4, characterized in that, The preparation apparatus further includes a second support member disposed in the first cavity and located in the extension direction of the channel, the second support member being used to support the doped target.

6. The apparatus for preparing doped diamond thin films according to any one of claims 1-3, characterized in that, The first cavity is provided with a mesh structure, which is used to filter substances generated by the doped target material under laser irradiation; and / or, The first cavity is equipped with an electromagnetic component, which is used to generate an electromagnetic field to filter the substances produced by the doped target under laser irradiation.

7. A method for preparing a diamond-doped thin film, characterized in that, The doped diamond film is prepared using the preparation apparatus according to any one of claims 1 to 6, and the preparation method includes: Place the substrate in the first cavity; The third driving component drives the doped target on the support portion at the first preset position to move in the opposite direction of the second direction to the second preset position. The first driving component drives the end effector to transport the doped target to the first cavity. The switching valve is controlled to isolate the first cavity and the second cavity. The first cavity is evacuated using the vacuum assembly; The reactant gas is introduced into the first cavity, and the heating component is controlled to heat the reactant gas. The laser emitting assembly is controlled to emit laser light toward the doped target material within the first cavity; The second cavity is evacuated using the vacuum assembly; Control the switching valve to connect the first cavity and the second cavity; The doped target material of the first cavity is transported to the second cavity by the transport assembly; The third driving component drives another doped target on the support portion at the first preset position to move in the opposite direction to the second preset position along the second direction. The first driving component transports the other doped target to the first cavity and controls the switching valve to isolate the first cavity and the second cavity.

8. A diamond-doped thin film, characterized in that, It is prepared by the preparation method described in claim 7.

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