Control method and product of parallel circuit of silicon switching device and silicon carbide switching device

Abstract

The invention provides a control method and product of a silicon switching device and silicon carbide switching device parallel circuit, and relates to the field of circuit control, and the control circuit comprises a total current collection sub-circuit which is used for collecting the total current value of the parallel circuit; the logic control sub-circuit is used for determining a control mode of the parallel circuit according to the total current value; the driving sub-circuit is used for sending a first switch control instruction matched with the control mode to the silicon switching device and sending a second switch control instruction matched with the control mode to the silicon carbide switching device; the control of the silicon switching device by the first switching control instruction and the control of the silicon carbide switching device by the second switching control instruction are matched with the control mode. When the control circuit provided by the embodiment of the invention is used for controlling the parallel circuit, the control loss of the parallel circuit can be reduced to the maximum extent, and the control efficiency of the parallel circuit is improved.

Description

Technical Field

[0001] The present invention relates to the field of circuit control, and in particular to a control method and product for a parallel circuit of a silicon switch device and a silicon carbide switch device. Background Art

[0002] The electric drive controller is the core component of new energy vehicles. Traditional electric drive controllers use silicon switching devices (such as Si IGBT). Compared with silicon carbide switching devices (such as SiC MOSFET), silicon switching devices have slower switching speeds and higher conduction losses, and cannot meet the higher conversion efficiency requirements of new energy vehicles. However, the cost of silicon switching devices is lower than that of silicon carbide switching devices, so combining the two is the main direction of the design of electric drive controllers for new energy vehicles.

[0003] Therefore, how to design a control circuit for mixed parallel connection of silicon switching devices and silicon carbide switching devices so that cost-advantaged silicon switching devices and performance-advantaged silicon carbide switching devices can be used in combination is an issue that needs to be considered when designing electric drive controllers for new energy vehicles. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a control method and product for a parallel circuit of a silicon switching device and a silicon carbide switching device, aiming to control the parallel circuit of a silicon switching device and a silicon carbide switching device.

[0005] In a first aspect, an embodiment of the present application provides a control circuit for a parallel circuit of a silicon switch device and a silicon carbide switch device, comprising: A total current acquisition subcircuit, the total current acquisition subcircuit is used to acquire the total current value of the parallel circuit; a logic control subcircuit, wherein a first end of the logic control subcircuit is electrically connected to the total current acquisition subcircuit, and the logic control subcircuit is used to determine a control mode of the parallel circuit according to the total current value; a driving subcircuit, wherein a first end of the driving subcircuit is electrically connected to a second end of the logic control subcircuit, a second end of the driving subcircuit is electrically connected to the silicon switch device, and a third end of the driving subcircuit is electrically connected to the silicon carbide switch device, and the driving subcircuit is used to send a first switch control instruction to the silicon switch device and send a second switch control instruction to the silicon carbide switch device; the control of the silicon switch device by the first switch control instruction and the control of the silicon carbide switch device by the second switch control instruction match the control mode; Wherein, when the total current value is greater than or equal to the first preset current threshold, the control mode is the first control mode, and the first control mode is used to control the silicon switch device to be turned on before the silicon carbide switch device is turned on and / or to be turned off after the silicon carbide switch device is turned off; When the total current value is less than the first preset current threshold, the control mode is a second control mode, and the second control mode is used to control the silicon carbide switching device to be turned on before the silicon switching device is turned on and / or to be turned off after the silicon switching device is turned off.

[0006] In some embodiments, the logic control subcircuit includes: a first logic control unit, wherein a first end of the first logic control unit is electrically connected to the total current acquisition subcircuit, and the logic control subcircuit is used to determine a control mode of the parallel circuit according to the total current value; a second logic control unit, wherein a first end of the second logic control unit is connected to a second end of the first logic control unit, a second end of the second logic control unit is electrically connected to a first end of the driving sub-circuit, and the second logic control unit is used to control the driving sub-circuit to send the first switching control instruction and the second switching control instruction according to a sending timing of the first switching control instruction and the second switching control instruction corresponding to the control mode; Wherein, in the case where the first switch control instruction and the second switch control instruction are conduction instructions, if the control mode is the first control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the second switch control instruction is sent at a time point delayed by a first delay time from a first time point, and the first time point is the sending time point of the first switch control instruction; if the control mode is the second control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the first switch control instruction is sent at a time point delayed by a second delay time from a second time point, and the second time point is the sending time point of the second switch control instruction; In the case where the first switch control instruction and the second switch control instruction are turn-off instructions, if the control mode is the first control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the first switch control instruction is sent at a time point delayed from a third time point by a third delay time length, and the third time point is the sending time point of the second switch control instruction; if the control mode is the second control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the second switch control instruction is sent at a time point delayed from a fourth time point by a fourth delay time length, and the fourth time point is the sending time point of the first switch control instruction.

[0007] In some embodiments, the control circuit further comprises: a current collection subcircuit, wherein a first end of the current collection subcircuit is electrically connected to the second logic control unit, a second end of the current collection subcircuit is electrically connected to the silicon switch device and the silicon carbide switch device, and the current collection subcircuit is used to collect a first current value of a loop conducted by the silicon switch device and a second current value of a loop conducted by the silicon carbide switch device; When the first switch control instruction and the second switch control instruction are conduction instructions, the second logic control unit is used to determine the sending timing of the first switch control instruction and the second switch control instruction according to the control mode and the first current value or the second current value; Among them, if the control mode is the first control mode, then at the time point of sending the second switch control instruction, the first current value is greater than the second preset current threshold; if the control mode is the second control mode, then at the time point of sending the first switch control instruction, the second current value is greater than the third preset current threshold.

[0008] In some embodiments, the control circuit further comprises: a voltage collection subcircuit, wherein a first end of the voltage collection subcircuit is electrically connected to the second logic control unit, a second end of the voltage collection subcircuit is electrically connected to the silicon switch device and the silicon carbide switch device, and the voltage collection subcircuit is used to collect a first voltage value of the silicon switch device during a shutdown process and a second voltage value of the silicon carbide switch device during a shutdown process; When the first switch control instruction and the second switch control instruction are off instructions, the second logic control unit is used to determine the sending timing of the first switch control instruction and the second switch control instruction according to the control mode and the first voltage value or the second voltage value; Among them, if the control mode is the first control mode, then at the time point of sending the first switch control instruction, the second voltage value is greater than the first preset voltage threshold; if the control mode is the second control mode, then at the time point of sending the second switch control instruction, the first voltage value is greater than the second preset voltage threshold.

[0009] In some embodiments, the driving subcircuit includes: a first driving unit, wherein a first end of the first driving unit is electrically connected to the logic control subcircuit, a second end of the first driving unit is electrically connected to the silicon switching device, and the first driving unit is used to send a first switch control instruction corresponding to the control mode to the silicon switching device; A second drive unit, wherein a first end of the second drive unit is electrically connected to the logic control subcircuit, a second end of the second drive unit is electrically connected to the silicon carbide switching device, and the second drive unit is used to send a second switch control instruction corresponding to the control mode to the silicon carbide switching device.

[0010] In a second aspect, an embodiment of the present application provides a vehicle, comprising: a control circuit for a parallel circuit of a silicon switching device and a silicon carbide switching device provided in the first aspect of the embodiment of the present application, and the parallel circuit.

[0011] In some embodiments, when the logic control subcircuit includes a first logic control unit and a second logic control unit, the total current acquisition subcircuit and the first logic control unit are integrated into the main control chip of the vehicle, the second logic control unit and the drive subcircuit are integrated into the drive chip, and the drive chip and the parallel circuit are integrated into the electric drive controller of the vehicle.

[0012] In a third aspect, an embodiment of the present application provides a control method for a parallel circuit of a silicon switch device and a silicon carbide switch device, the method comprising: Collecting the total current value of the parallel circuit; determining a control mode of the parallel circuit according to the total current value; According to the control mode, sending a first switch control instruction to the silicon switch device, and sending a second switch control instruction to the silicon carbide switch device; Wherein, when the total current value is greater than or equal to the first preset current threshold, the control mode is the first control mode, and the first control mode is used to control the silicon switch device to be turned on before the silicon carbide switch device is turned on and / or to be turned off after the silicon carbide switch device is turned off; When the total current value is less than the first preset current threshold, the control mode is a second control mode, and the second control mode is used to control the silicon carbide switching device to be turned on before the silicon switching device is turned on and / or to be turned off after the silicon switching device is turned off.

[0013] In some implementations, sending a first switch control instruction to the silicon switch device and sending a second switch control instruction to the silicon carbide switch device according to the control mode includes: When the first switch control instruction and the second switch control instruction are conduction instructions, the first current value of the circuit conducted by the silicon switching device or the second current value of the circuit conducted by the silicon carbide switching device is collected, and according to the control mode and the first current value or the second current value, the first switch control instruction is sent to the silicon switching device, and the second switch control instruction is sent to the silicon carbide switching device.

[0014] In some implementations, sending the first switch control instruction to the silicon switch device and sending the second switch control instruction to the silicon carbide switch device according to the control mode and the first current value or the second current value includes: If the control mode is the first control mode, the first control instruction is sent to the silicon switch device at a first time point, and the second control instruction is sent to the silicon carbide switch device at a time point delayed by a first delay time from the first time point; at the time point of sending the second switch control instruction, the first current value is greater than a second preset current threshold; If the control mode is the second control mode, the second control instruction is sent at a second time point, and the first control instruction is sent at a time point delayed by a second delay time from the second time point; at the sending time point of the first switch control instruction, the second current value is greater than the third preset current threshold.

[0015] In some implementations, sending a first switch control instruction to the silicon switch device and sending a second switch control instruction to the silicon carbide switch device according to the control mode includes: In the case where the first switch control instruction and the second switch control instruction are shutdown instructions, a first voltage value of the silicon switching device during the shutdown process or a second voltage value of the silicon carbide switching device during the shutdown process is collected, and according to the control mode and the first voltage value or the second voltage value, the first switch control instruction is sent to the silicon switching device, and the second switch control instruction is sent to the silicon carbide switching device.

[0016] In some implementations, sending the first switch control instruction to the silicon switch device and sending the second switch control instruction to the silicon carbide switch device according to the control mode and the first voltage value or the second voltage value includes: If the control mode is the first control mode, the second control instruction is sent at a third time point, and the first control instruction is sent at a time point delayed by a third delay time from the third time point; at the sending time point of the first switch control instruction, the second voltage value is greater than the first preset voltage threshold; If the control mode is the second control mode, the first control instruction is sent at a fourth time point, and the second control instruction is sent at a time point delayed by a fourth delay time from the fourth time point; at the sending time point of the second switch control instruction, the first voltage value is greater than the second preset voltage threshold.

[0017] In an embodiment of the present application, the logic control subcircuit in the control circuit dynamically selects a control mode based on the total current value of the parallel circuit acquired by the total current acquisition subcircuit, so that the driving subcircuit outputs a first switch control instruction and a second switch control instruction that match the determined control mode, so as to respectively control the silicon switch device and the silicon carbide switch device, thereby optimizing the switching order of the silicon switch device and the silicon carbide switch device. When the total current value is greater than or equal to the first preset threshold value, the control mode is determined to be the first control mode. In the first control mode, the silicon switch device is turned on first and then off compared to the silicon carbide switch device, realizing the zero voltage switch (Zero Voltage Switch, ZVS) of the silicon carbide switch device, and making full use of the conduction characteristics of the silicon switch device to cope with large currents, thereby minimizing the loss during the conduction and switching processes, and also ensuring the safety of the silicon carbide switch device; when the total current value is less than the first preset threshold value, the control mode is determined to be the second control mode. In the second control mode, the silicon carbide switch device is turned on first and then off compared to the silicon switch device, realizing the ZVS of the silicon switch device, and maximizing the low loss advantage of the silicon carbide switch device, and also minimizing the loss during the conduction and switching processes. It can be seen that the control circuit of the embodiment of the present application is used to control the above-mentioned parallel circuit, which can maximize the reduction of the control loss of the above-mentioned parallel circuit and improve the control efficiency of the above-mentioned parallel circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is one of the structural schematic diagrams of the control circuit of the parallel circuit of the silicon switch device and the silicon carbide switch device provided in the embodiment of the present application; Figure 2 It is a schematic diagram of loss composition provided in an embodiment of the present application; Figure 3It is a schematic diagram of the change of conduction loss of a silicon switch device and a silicon carbide switch device provided in an embodiment of the present application; Figure 4 is a schematic diagram of current changes when a silicon switch device and a silicon carbide switch device provided in an embodiment of the present application are connected in parallel; Figure 5 is a schematic diagram of a first control mode provided in an embodiment of the present application; Figure 6 is a schematic diagram of a second control mode provided in an embodiment of the present application; Figure 7 This is the second structural schematic diagram of the control circuit of the parallel circuit of the silicon switch device and the silicon carbide switch device provided in the embodiment of the present application; Figure 8 is a circuit diagram of a control circuit of a parallel circuit of a silicon switch device and a silicon carbide switch device provided in an embodiment of the present application; Fig. 9 is a schematic structural diagram of a vehicle provided in an embodiment of the present application; Fig.10 It is a flow chart of a control method for a parallel circuit of a silicon switch device and a silicon carbide switch device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0020] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the terms used in this way are interchangeable where appropriate, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0021] First, several terms involved in the embodiments of the present application are explained.

[0022] Silicon switching devices: Silicon switching devices generally refer to power semiconductor devices made of silicon materials, such as IGBT (Insulated Gate Bipolar Transistor) and MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). These devices are widely used, especially suitable for working at medium frequency and high current. The characteristics of silicon material make it have lower conduction loss under high current conditions, but it is easy to produce higher switching loss under high frequency switching conditions. Therefore, silicon switching devices are more cost-effective and have better conduction performance when used in high current circuits.

[0023] Silicon carbide switching devices: Silicon carbide switching devices are power devices based on silicon carbide semiconductor materials, such as silicon carbide MOSFETs and silicon carbide diodes. Compared with traditional silicon devices, silicon carbide devices have higher breakdown voltage and thermal conductivity, allowing them to operate efficiently in high voltage, high frequency and high temperature environments. Silicon carbide devices have faster switching speeds and lower switching losses, making them suitable for high-frequency, high-efficiency switching applications. At the same time, the high thermal conductivity of silicon carbide helps reduce device temperature rise and improve the heat dissipation performance of the system. The conduction loss of silicon carbide devices is small under low current conditions, but they may face higher conduction losses in high current applications.

[0024] The electric drive controller is the core component of new energy vehicles. Traditional electric drive controllers use silicon switching devices (such as Si IGBT). Compared with silicon carbide switching devices (such as SiC MOSFET), silicon switching devices have slower switching speeds and higher conduction losses, and cannot meet the higher conversion efficiency requirements of new energy vehicles. However, the cost of silicon switching devices is lower than that of silicon carbide switching devices, so combining the two is the main direction of the design of electric drive controllers for new energy vehicles.

[0025] Therefore, how to design a control circuit for mixed parallel connection of silicon switching devices and silicon carbide switching devices so that cost-advantaged silicon switching devices and performance-advantaged silicon carbide switching devices can be used in combination is an issue that needs to be considered when designing electric drive controllers for new energy vehicles.

[0026] Based on this, an embodiment of the present application provides a control method and product for a parallel circuit of a silicon switching device and a silicon carbide switching device.

[0027] In conjunction with the accompanying drawings, the control method and product of the parallel circuit of the silicon switch device and the silicon carbide switch device provided in the embodiment of the present application are described in detail through specific embodiments and their application scenarios.

[0028] See also Figure 1, is one of the structural schematic diagrams of the control circuit of the parallel circuit of the silicon switch device and the silicon carbide switch device provided in the embodiment of the present application. Figure 1 As shown, in a first aspect of an embodiment of the present application, a control circuit 100 of a parallel circuit of a silicon switch device and a silicon carbide switch device is provided, and the control circuit 100 includes: The total current acquisition subcircuit 110 is used to acquire the total current value of the parallel circuit 200; A logic control subcircuit 120, wherein a first end of the logic control subcircuit is electrically connected to the total current acquisition subcircuit 110, and the logic control subcircuit 120 is used to determine a control mode of the parallel circuit 200 according to the total current value; A driving subcircuit 130, wherein a first end of the driving subcircuit 130 is electrically connected to a second end of the logic control subcircuit 120, a second end of the driving subcircuit 130 is electrically connected to a silicon switch device, and a third end of the driving subcircuit 130 is electrically connected to a silicon carbide switch device. The driving subcircuit 130 is used to send a first switch control instruction to the silicon switch device, and to send a second switch control instruction to the silicon carbide switch device; the control of the silicon switch device by the first switch control instruction and the control of the silicon carbide switch device by the second switch control instruction match the control mode; Wherein, when the total current value is greater than or equal to the first preset current threshold, the control mode is the first control mode, and the first control mode is used to control the silicon switch device to be turned on before the silicon carbide switch device is turned on and / or to be turned off after the silicon carbide switch device is turned off; When the total current value is less than the first preset current threshold, the control mode is the second control mode, and the second control mode is used to control the silicon carbide switching device to be turned on before the silicon switching device is turned on and / or to be turned off after the silicon switching device is turned off.

[0029] The control circuit 100 of the parallel circuit 200 of a silicon switch device and a silicon carbide switch device provided in the embodiment of the present application can flexibly select different switch control modes according to the current of the parallel circuit 200 to optimize the switching loss and conduction loss of the system. The control circuit 100 includes three main components: Total current acquisition subcircuit 110: The total current acquisition subcircuit 110 is used to collect the total current value of the parallel circuit 200 of the silicon switch device and the silicon carbide switch device. By acquiring the total current value of the parallel circuit 200, the total current acquisition subcircuit 110 can determine the working condition of the device to which the parallel circuit 200 belongs, such as the electric drive controller, in real time, thereby providing a basis for the selection of the control mode.

[0030] Logic control subcircuit 120: The logic control subcircuit 120 is electrically connected to the total current acquisition subcircuit 110, and determines the current control mode according to the total current value transmitted by the total current acquisition subcircuit 110. If the total current value is greater than or equal to the preset first preset current threshold, the first control mode is selected; if the total current value is less than the threshold, the second control mode is selected. It can be understood by those skilled in the art that the first preset current threshold can be adaptively debugged and set by the technician according to the design requirements of the control circuit 100 and the basic parameters of the silicon switch device and the silicon carbide switch device.

[0031] Driving subcircuit 130: The driving subcircuit 130 is electrically connected to the logic control subcircuit 120, and is connected to the silicon switch device and the silicon carbide switch device respectively. The driving subcircuit 130 sends a switch control instruction matching the determined control mode to the silicon switch device and the silicon carbide switch device (sends a first control instruction to the silicon switch device, and sends a second control instruction to the silicon carbide switch device) according to the output of the logic control subcircuit 120.

[0032] When the control mode is the first control mode, the first switch control instruction and the second switch control instruction matching the control mode are used to control the silicon switch device to turn on before the silicon carbide switch device turns on, and / or to turn off after the silicon carbide switch device turns off, that is, to control the silicon switch device to turn on first and then turn off, and the silicon carbide switch device to turn on later and then turn off. Specifically, the logic control subcircuit 120 can control the timing of sending control instructions to the silicon switch device and the silicon carbide switch device by controlling the driving subcircuit 130 to control the silicon switch device to turn on before the silicon carbide switch device turns on, and / or to turn off after the silicon carbide switch device turns off.

[0033] Figure 2 is a schematic diagram of the loss composition provided in the embodiment of the present application, such as Figure 2 As shown, the loss of the parallel circuit is composed of switching loss (turn-on loss and turn-off loss) and conduction loss.

[0034] Specifically, the silicon switch device is turned on first and bears the main current in the circuit. When the silicon carbide switch device is turned on with a delay, the voltage in the parallel circuit 200 has been greatly reduced, thereby allowing the silicon carbide switch device to be turned on at a state close to zero voltage, achieving ZVS, and greatly reducing the turn-on loss of the silicon carbide switch device. Similarly, the silicon switch device is turned off later than the silicon carbide switch device, thereby allowing the silicon carbide switch device to be turned off at a state close to zero voltage, also achieving ZVS, and reducing the turn-off loss of the silicon carbide switch device. In this way, the switching losses of the silicon switch device and the silicon carbide switch device are minimized.

[0035] In the first control mode, the silicon switch device, as the first device turned on, bears most (or all) of the current, meeting the high current load requirement of the parallel circuit 200. This is because the conduction loss of the silicon switch device is relatively small compared to the silicon carbide switch device under high current conditions (e.g. Figure 3 As shown, Figure 3 This is a schematic diagram of the change in conduction loss of a silicon switching device and a silicon carbide switching device provided in an embodiment of the present application, wherein the silicon switching device is expressed as IGBT and the silicon carbide switching device is expressed as SiC). Placing the main current load on the silicon switching device for conduction not only improves the overall efficiency, but also greatly reduces the conduction loss of the silicon carbide switching device under high current conditions.

[0036] Moreover, by delaying the turn-on time of the silicon carbide switch device and only acting as an auxiliary conduction device to share part of the current load in the later stage, the silicon carbide switch device is ensured to be always in a safe current range. This not only reduces the temperature rise risk of the silicon carbide switch device, but also improves the reliability of the parallel circuit 200 under high current conditions.

[0037] When the control mode is the second control mode, the driving subcircuit 130 controls the silicon carbide switch device to turn on before the silicon switch device turns on, and / or turns off after the silicon switch device turns off, that is, the silicon carbide switch device is controlled to turn on first and then turn off, and the silicon switch device is controlled to turn on later and then turn off. Specifically, the logic control subcircuit 120 can control the silicon carbide switch device to turn on before the silicon switch device turns on, and / or turns off after the silicon switch device turns off, by controlling the timing of sending control instructions to the silicon carbide switch device and the silicon switch device by the driving subcircuit 130.

[0038] Specifically, the silicon carbide switch device is turned on first and bears the main current load. When the silicon switch device is turned on, the voltage in the circuit has been reduced. At this time, the silicon switch device is turned on at a lower voltage, thus achieving ZVS, which significantly reduces the turn-on loss of the silicon switch device. Similarly, the silicon carbide switch device is delayed from the silicon switch device to turn off, allowing the silicon switch device to turn off at a state close to zero voltage, also achieving ZVS and reducing the turn-off loss of the silicon switch device.

[0039] Since silicon carbide switching devices themselves have the advantage of low switching losses, as the first device to be turned on, it withstands and bears most of the losses during the turn-on and turn-off processes. However, due to the low switching losses of silicon carbide switching devices under smaller current conditions, this process does not cause significant additional losses.

[0040] During the conduction process, the silicon carbide switch device, as the first conduction device, carries most of the current, so the main conduction loss occurs in the silicon carbide switch device. Since the conduction loss of the silicon carbide switch device is low under low current conditions, this current sharing method can maintain a low overall conduction loss. At the same time, the silicon switch device delays conduction and mainly plays an auxiliary sharing role in the circuit, and does not need to bear the main current (such as Figure 4 As shown, Figure 4 Schematic diagram of current change when a silicon switch device and a silicon carbide switch device provided in an embodiment of the present application are connected in parallel, wherein the silicon switch device is expressed as Si and the silicon carbide switch device is expressed as SiC).

[0041] Exemplarily, in the parallel circuit 200, the silicon (Si) switching device uses Si IGBT, and the silicon carbide (SiC) switching device uses SiC MOSFET. This control circuit 100 uses the total current acquisition subcircuit 110 to monitor the total current value of the system in real time. When the total current value is greater than or equal to the first preset current threshold, the logic control subcircuit 120 selects the first control mode. In this mode, the driving subcircuit 130 preferentially outputs the first switch control instruction to turn on the Si IGBT, and then outputs the second switch control instruction to turn on the SiC MOSFET to achieve zero voltage turn-on of the SiC IGBT. This sequential allocation allows the Si IGBT to bear most of the current and optimizes the conduction loss during conduction. When it is necessary to shut down, the SiC MOSFET is turned off first and then the Si IGBT is turned off to achieve zero voltage turn-off of the SiC IGBT, thereby minimizing the switching loss (such as Figure 5 As shown, Figure 5 is a schematic diagram of the first control mode provided in an embodiment of the present application).

[0042] When the total current is less than the first preset current threshold, the logic control subcircuit 120 selects the second control mode. In this mode, the drive subcircuit 130 preferentially outputs the second switch control instruction to turn on the SiC MOSFET, and then delays the output of the first switch control instruction to turn on the Si IGBT to achieve zero voltage turn-on of the Si IGBT. The SiC MOSFET is turned on first and bears the small current conduction loss, avoiding unnecessary loss of the Si IGBT under small current. When it is necessary to shut down, the Si IGBT is turned off first and then the SiC MOSFET is turned off to achieve zero voltage turn-off of the Si IGBT, thereby minimizing the switching loss (such as Figure 6 As shown, Figure 6 is a schematic diagram of the second control mode provided in an embodiment of the present application).

[0043] The logic control subcircuit 120 in the control circuit 100 provided in the embodiment of the present application dynamically selects a control mode based on the total current value of the parallel circuit 200 acquired by the total current acquisition subcircuit 110, so that the driving subcircuit 130 outputs a first switch control instruction and a second switch control instruction matching the determined control mode, so as to respectively control the silicon switch device and the silicon carbide switch device, thereby optimizing the switching order of the silicon switch device and the silicon carbide switch device. When the total current value is greater than or equal to the first preset threshold value, the control mode is determined to be the first control mode. In the first control mode, the silicon switching device is turned on first and then turned off compared to the silicon carbide switching device, thereby realizing the ZVS of the silicon carbide switching device, and making full use of the conduction characteristics of the silicon switching device to cope with larger currents, thereby minimizing the losses during the conduction and switching processes, and ensuring the safety of the silicon carbide switching device; when the total current value is less than the first preset threshold value, the control mode is determined to be the second control mode. In the second control mode, the silicon carbide switching device is turned on first and then turned off compared to the silicon switching device, thereby realizing the ZVS of the silicon switching device, and maximizing the low loss advantage of the silicon carbide switching device, and also minimizing the losses during the conduction and switching processes.

[0044] In some embodiments, the logic control subcircuit 120 includes: A first logic control unit, wherein a first end of the first logic control unit is electrically connected to the total current acquisition subcircuit, and the first logic control unit is used to determine a control mode of the parallel circuit according to the total current value; A second logic control unit, wherein a first end of the second logic control unit is connected to a second end of the first logic control unit, and a second end of the second logic control unit is electrically connected to a first end of the driving sub-circuit 130, and the second logic control unit is used to control the driving sub-circuit 130 to send the first switching control instruction and the second switching control instruction according to the sending timing of the first switching control instruction and the second switching control instruction corresponding to the control mode; Wherein, in the case where the first switch control instruction and the second switch control instruction are conduction instructions, if the control mode is the first control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the second switch control instruction is sent at a time point delayed by a first delay time length from a first time point, and the first time point is the sending time point of the first switch control instruction; if the control mode is the second control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the first switch control instruction is sent at a time point delayed by a second delay time length from a second time point, and the second time point is the sending time point of the second switch control instruction; In the case where the first switch control instruction and the second switch control instruction are shut-off instructions, if the control mode is the first control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the first switch control instruction is sent at a time point delayed from the third time point by the third delay time, and the third time point is the sending time point of the second switch control instruction; if the control mode is the second control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the second switch control instruction is sent at a time point delayed from the fourth time point by the fourth delay time, and the fourth time point is the sending time point of the first switch control instruction.

[0045] In this embodiment, the logic control subcircuit 120 can be divided into two parts according to the design requirements of the overall device, a first logic control unit for determining the control mode, and a second logic control unit for controlling the drive subcircuit 130 to output control instructions. For example, in a vehicle, the first logic control unit can be integrated into the main control chip of the vehicle, and the second logic control unit can be integrated into the drive chip of the vehicle electric drive controller (the electric drive controller includes the parallel circuit 200), the drive chip is electrically connected to the parallel circuit 200, and the main control chip and the drive chip can be communicatively connected (the first end of the second logic control unit is communicatively connected to the second end of the first logic control unit). Similarly, the drive subcircuit 130 included in the control circuit 100 can also be integrated in the above-mentioned drive chip.

[0046] In this embodiment, in the first control mode, the logic control subcircuit 120 controls the timing of sending control instructions to the silicon switch device and the silicon carbide switch device by controlling the driving subcircuit 130 to control the silicon switch device to turn on before the silicon carbide switch device turns on, and / or to turn off after the silicon carbide switch device turns off. Specifically, after the first logic control unit determines the control mode, it sends the control mode to the second logic control unit. After receiving the control mode sent by the first logic control unit, the second logic control unit controls the driving subcircuit 130 to send control instructions to the silicon switch device and the silicon carbide switch device according to the sending timing corresponding to the control mode.

[0047] In the first control mode, when the silicon switch device is controlled to be turned on before the silicon carbide switch device is turned on, the silicon switch device is first controlled to be turned on (a first switch control instruction as a turn-on instruction is sent to the silicon switch device), and after a first delay time at a first time point, the silicon carbide switch device is controlled to be turned on (a second switch control instruction as a turn-on instruction is sent to the silicon carbide switch device), wherein the first time point is the time point when the silicon switch device is controlled to be turned on (i.e., the time point when the first switch control instruction is sent). In this way, ZVS of the silicon carbide switch device is achieved when it is turned on, and the silicon switch device bears the main working current.

[0048] Similarly, in the second control mode, when the silicon carbide switch device is controlled to be turned on before the silicon switch device is turned on, the silicon carbide switch device is first controlled to be turned on (a second switch control instruction as a turn-on instruction is sent to the silicon carbide switch device), and after a second delay time at a second time point, the silicon switch device is controlled to be turned on (a first switch control instruction as a turn-on instruction is sent to the silicon switch device), wherein the second time point is the time point when the silicon carbide switch device is controlled to be turned on (i.e., the time point when the second switch control instruction is sent). In this way, ZVS of the silicon switch device is achieved when it is turned on, and the silicon carbide switch device bears the main working current.

[0049] In this embodiment, in the first control mode, when the silicon switch device is controlled to turn off after the silicon carbide switch device is turned off, the silicon carbide switch device is first controlled to turn off (a second switch control instruction as a turn-off instruction is sent to the silicon carbide switch device), and after a third delay time at a third time point, the silicon switch device is controlled to turn off (a first switch control instruction as a turn-off instruction is sent to the silicon switch device), wherein the third time point is the time point when the silicon carbide switch device is controlled to turn off (i.e., the time point when the second switch control instruction is sent). In this way, ZVS of the silicon carbide switch device when it is turned off is achieved.

[0050] Similarly, in the second control mode, when the silicon carbide switch device is controlled to turn off after the silicon switch device is turned off, the silicon switch device is first controlled to turn off (a first switch control instruction as a turn-off instruction is sent to the silicon switch device), and after a fourth delay time at a fourth time point, the silicon carbide switch device is controlled to turn off (a second switch control instruction as a turn-off instruction is sent to the silicon carbide switch device), wherein the fourth time point is the time point when the silicon switch device is controlled to turn off (i.e., the time point when the first switch control instruction is sent). In this way, ZVS of the silicon switch device when it is turned off is achieved.

[0051] In some embodiments, the encoding of the four delay durations can be achieved through the following steps: different delay times (selecting delay pairs) are achieved by configuring the two delay units differently; the second logic control unit then dynamically selects different delay pair configurations according to different delay pairs, for example, by setting binary codes (such as 0, 1, 2) to adapt to real-time requirements; in an offline state, different delay pair combinations can be pre-configured, each delay pair corresponds to specific delay parameters and structures, and these configurations are managed by numbering for quick call at runtime. Different combinations have corresponding delay values ​​in the coding table, which can be quickly searched and applied under different operating conditions.

[0052] In some embodiments, the control circuit 100 further includes: A current collection subcircuit, wherein a first end of the current collection subcircuit is electrically connected to the second logic control unit, a second end of the current collection subcircuit is electrically connected to the silicon switch device and the silicon carbide switch device, and the current collection subcircuit is used to collect a first current value of a loop conducted by the silicon switch device and a second current value of a loop conducted by the silicon carbide switch device; When the first switch control instruction and the second switch control instruction are conduction instructions, the second logic control unit is used to determine the sending timing of the first switch control instruction and the second switch control instruction according to the control mode and the first current value or the second current value; Among them, if the control mode is the first control mode, then at the time point of sending the second switch control instruction, the first current value is greater than the second preset current threshold; if the control mode is the second control mode, then at the time point of sending the first switch control instruction, the second current value is greater than the third preset current threshold.

[0053] Since the silicon switching devices and the silicon carbide switching devices are connected in parallel and have crosstalk with each other, the actual operation of the silicon switching devices and the silicon carbide switching devices may deviate from the predetermined operation of the control mode determined by the logic control subcircuit 120, and there is a risk that the actual operation of the hardware is inconsistent with the software expectations.

[0054] In this embodiment, the control circuit 100 further includes a current acquisition subcircuit. The first end of the current acquisition subcircuit is electrically connected to the second logic control unit in the logic control subcircuit 120 (that is, the current acquisition subcircuit can be integrated with the second logic control unit in the same chip), and the second end is electrically connected to the silicon switch device and the silicon carbide switch device. The function of the current acquisition subcircuit 140 is to collect the current value of the silicon switch device conduction loop and the current value of the silicon carbide switch device conduction loop, and send these current values ​​to the second logic control unit.

[0055] In the first control mode, in the process of controlling the silicon switch device to turn on and controlling the silicon carbide switch device to turn on at a time point delayed from the first time point by the first delay time, the logic control subcircuit 120 first controls the silicon switch device to turn on (controls the drive subcircuit 130 to send a first switch control instruction), and obtains the current value (first current value) of the silicon switch device conduction loop; only when the first current value exceeds the second preset current threshold (that is, indicating that the silicon switch device has been turned on) and the time interval between the current time point and the first time point is greater than or equal to the first delay time, the silicon carbide switch device is controlled to turn on (controls the drive subcircuit 130 to send a second switch control instruction) to ensure that the silicon switch device is turned on first and the silicon carbide switch device is turned on later.

[0056] In the second control mode, in the process of controlling the silicon carbide switching device to turn on and controlling the silicon switching device to turn on at a time point delayed by a second delay time at a second time point, the logic control subcircuit 120 first controls the silicon carbide switching device to turn on (controls the drive subcircuit 130 to send a second switch control instruction), and obtains the current value (second current value) of the conduction loop of the silicon carbide switching device; only when the second current value exceeds the third preset current threshold (that is, indicating that the silicon carbide switching device has been turned on) and the time interval between the current time point and the second time point is greater than or equal to the second delay time, the silicon switching device is controlled to turn on (controls the drive subcircuit 130 to send the first switch control instruction) to ensure that the silicon carbide switching device is turned on first and the silicon switching device is turned on later.

[0057] In this way, when the logic control subcircuit 120 controls the conduction of the silicon switching device and the silicon carbide switching device according to the control mode, it detects and obtains the corresponding currents of the two switching devices through the current acquisition subcircuit, and performs corresponding feedback and correction to ensure that the actual actions of the silicon switching device and the silicon carbide switching device are consistent with the expected actions of the control mode.

[0058] Those skilled in the art will appreciate that the second preset current threshold, the third preset current threshold, the first time point, the first delay period, the second time point and the second delay period can be adaptively debugged and set by technicians based on the design requirements of the control circuit 100 and the basic parameters of the silicon switching device and the silicon carbide switching device.

[0059] In some embodiments, The control circuit 100 further includes: A voltage collection subcircuit, wherein a first end of the voltage collection subcircuit is electrically connected to the second logic control unit, a second end of the voltage collection subcircuit is electrically connected to the silicon switch device and the silicon carbide switch device, and the voltage collection subcircuit is used to collect a first voltage value of the silicon switch device during a shutdown process and a second voltage value of the silicon carbide switch device during a shutdown process; In the case where the first switch control instruction and the second switch control instruction are off instructions, the second logic control unit is used to determine the sending timing of the first switch control instruction and the second switch control instruction according to the control mode and the first voltage value or the second voltage value; Among them, if the control mode is the first control mode, then at the time point of sending the first switch control instruction, the second voltage value is greater than the first preset voltage threshold; if the control mode is the second control mode, then at the time point of sending the second switch control instruction, the first voltage value is greater than the second preset voltage threshold.

[0060] Since the silicon switching devices and the silicon carbide switching devices are connected in parallel and have crosstalk with each other, the actual operation of the silicon switching devices and the silicon carbide switching devices may deviate from the predetermined operation of the control mode determined by the logic control subcircuit 120, and there is a risk that the actual operation of the hardware is inconsistent with the software expectations.

[0061] In this embodiment, the control circuit 100 further includes a voltage acquisition subcircuit. The first end of the voltage acquisition subcircuit is electrically connected to the second logic control unit in the logic control subcircuit 120 (that is, the voltage acquisition subcircuit can be integrated with the second logic control unit in the same chip), and the second end is electrically connected to the silicon switch device and the silicon carbide switch device. The function of the voltage acquisition subcircuit is to collect the current value of the silicon switch device conduction loop and the voltage value of the silicon carbide switch device during the shutdown process, and send these voltage values ​​to the second logic control unit.

[0062] In the first control mode, in the process of controlling the silicon carbide switching device to turn off and controlling the silicon switching device to turn off at a time point delayed by a third delay time at a third time point, the logic control subcircuit 120 first controls the silicon carbide switching device to turn off (controls the drive subcircuit 130 to send a second switch control instruction), and obtains the voltage value (second voltage value) during the shutdown process of the silicon carbide switching device; only when the second voltage value exceeds the first preset voltage threshold (that is, indicating that the silicon carbide switching device has been shut down) and the time interval between the current time point and the third time point is greater than or equal to the third delay time, the silicon switching device is controlled to turn off (controls the drive subcircuit 130 to send the first switch control instruction) to ensure that the silicon carbide switching device is turned off first and the silicon switching device is turned off later.

[0063] In the second control mode, in the process of controlling the silicon switch device to turn off and controlling the silicon carbide switch device to turn off at a time point delayed by a fourth delay time at a fourth time point, the logic control subcircuit 120 first controls the silicon switch device to turn off (controls the drive subcircuit 130 to send a first switch control instruction), and obtains the voltage value (first voltage value) during the shutdown process of the silicon switch device; only when the first voltage value exceeds the second preset voltage threshold (that is, indicating that the silicon switch device has been turned off) and the time interval between the current time point and the fourth time point is greater than or equal to the fourth delay time, the silicon carbide switch device is controlled to turn off (controls the drive subcircuit 130 to send a second switch control instruction) to ensure that the silicon switch device is turned off first and the silicon carbide switch device is turned off later.

[0064] In this way, when the logic control subcircuit 120 controls the shutdown of the silicon switching device and the silicon carbide switching device according to the control mode, it detects and obtains the corresponding voltages of the two switching devices during the shutdown process through the voltage acquisition subcircuit, and performs corresponding feedback and correction to ensure that the actual actions of the silicon switching device and the silicon carbide switching device are consistent with the expected actions of the control mode.

[0065] Those skilled in the art will appreciate that the first preset voltage threshold, the second preset voltage threshold, the third time point, the third delay period, the fourth time point and the fourth delay period can be adaptively debugged and set by technicians based on the design requirements of the control circuit 100 and the basic parameters of the silicon switching device and the silicon carbide switching device.

[0066] In some embodiments, the driver subcircuit 130 includes: A first driving unit, wherein a first end of the first driving unit is electrically connected to the logic control subcircuit 120, a second end of the first driving unit is electrically connected to the silicon switch device, and the first driving unit is used to send a first switch control instruction corresponding to the control mode to the silicon switch device; A second drive unit, wherein a first end of the second drive unit is electrically connected to the logic control subcircuit 120, a second end of the second drive unit is electrically connected to the silicon carbide switching device, and the second drive unit is used to send a second switch control instruction corresponding to the control mode to the silicon carbide switching device.

[0067] In this embodiment, the driving subcircuit 130 includes two driving units, namely a first driving unit and a second driving unit, which are used to control the silicon switching device and the silicon carbide switching device respectively. The first driving unit and the second driving unit may include an isolation circuit (such as an optical coupler or transformer isolation, which is used to isolate the control circuit 100 from the parallel circuit 200 to improve the system safety and anti-interference ability), a driving circuit (used to amplify the control signal to the required voltage and current), and a protection circuit (such as an overcurrent and overvoltage protection circuit to prevent the device from being damaged under abnormal conditions).

[0068] The first end of the first driving unit is connected to the logic control subcircuit 120, and the second end is connected to the silicon switch device, and is responsible for sending the first switch control instruction to the silicon switch device according to the output of the logic control subcircuit 120. Specifically, the first driving unit sends the corresponding first switch control instruction to the silicon switch device according to different control modes to control its on or off sequence.

[0069] The first end of the second driving unit is also connected to the logic control subcircuit 120, and the second end is connected to the silicon carbide switching device. It is responsible for receiving and executing instructions from the logic control subcircuit 120, and sending a second switching control instruction to the silicon carbide switching device, so that it can achieve a switching sequence control different from that of the silicon switching device.

[0070] Thus, the design of independently driving two switch devices as described above is conducive to modular expansion and maintenance of the control circuit 100. Each drive unit can be debugged and replaced independently, avoiding the complexity caused by a single drive for synchronous control of two devices. This design makes the control circuit 100 more flexible in practical applications, and a single device or drive unit can be upgraded or replaced when necessary, thereby improving the maintainability and scalability of the control circuit 100.

[0071] Figure 7 This is the second structural schematic diagram of the control circuit of the parallel circuit of the silicon switch device and the silicon carbide switch device provided in the embodiment of the present application, Figure 8 This is a circuit diagram of a control circuit of a parallel circuit of a silicon switch device and a silicon carbide switch device provided in an embodiment of the present application. Please refer to Figure 7 and Figure 8 Based on the above-mentioned various implementations, the control circuit 100 provided in the embodiment of the present application can be described as follows: The control circuit 100 includes a total current acquisition subcircuit 110 and a logic control subcircuit 120. The total current acquisition subcircuit 110 acquires the total current value of the parallel circuit 200 and sends it to the logic control subcircuit 120, so that the logic control subcircuit 120 determines the control mode of the parallel circuit 200 according to the total current value and outputs a control instruction corresponding to the control mode.

[0072] The logic control subcircuit 120 can be divided into two parts according to the design requirements of the overall device, a first logic control unit 121 for determining the control mode, and a second logic control unit 122 for outputting control instructions. For example, in a vehicle, the first logic control unit 121 can be integrated into the main control chip of the vehicle, and the second logic control unit 122 can be integrated into the driver chip of the vehicle electric drive controller (the electric drive controller includes the parallel circuit 200), the driver chip is electrically connected to the parallel circuit 200, and the main control chip is communicatively connected to the driver chip.

[0073] The driving subcircuit 130 included in the control circuit 100 is integrated in the above-mentioned driving chip, including a first driving unit 131 and a second driving unit 132, which are electrically connected to the silicon switch device and the silicon carbide switch device in the parallel circuit 200 respectively, and are used to send a switch control instruction to the two switch devices according to the instruction output by the second logic control unit 122 of the logic control subcircuit 120 (the first driving unit 131 sends a first switch control instruction to the silicon switch device, and the second driving unit 132 sends a second switch control instruction to the silicon carbide switch device), and perform some necessary signal processing on the control instruction before sending. The first driving unit 131 and the second driving unit 132 can be electrically connected to the silicon switch device and the silicon carbide switch device respectively through a signal amplification circuit. The signal amplification circuit can include multiple operational amplifiers, multiple MOFET tubes and other components.

[0074] At the same time, the driver chip can also integrate a current acquisition sub-circuit 140 and a voltage acquisition sub-circuit 150, both of which are connected between the second logic control unit 122 of the logic control sub-circuit 120 and the two switching devices, and are used to collect the current value and voltage value of the two switching devices and send them to the second logic control unit 122 of the logic control sub-circuit 120. The second logic control unit 122 of the logic control sub-circuit 120 uses the collected current value and voltage value, combined with the control mode issued by the first logic control unit 121 (main control chip) of the logic control sub-circuit 120, to output switch control instructions to the two switching devices through the driver sub-circuit 130, so as to ensure that the actual action of the two switching devices is consistent with the expected action of the control mode.

[0075] A plurality of voltage dividing units may also be included between the voltage acquisition subcircuit 150 and the two switch devices to ensure that the voltage of the control circuit 100 is within a safe range during the acquisition process.

[0076] Fig. 9 is a schematic diagram of the structure of a vehicle provided in an embodiment of the present application, such as Fig.10 As shown, the second aspect of the embodiment of the present application provides a vehicle 1000, including the control circuit 100 provided in the first aspect of the embodiment of the present application, and a parallel circuit 200 of a silicon switching device and a silicon carbide switching device controlled by the control circuit 100.

[0077] In some embodiments, when the logic control subcircuit 120 includes a first logic control unit 121 and a second logic control unit 122, the total current acquisition subcircuit 110 and the first logic control unit 121 are integrated into the main control chip of the vehicle 1000, the second logic control unit 122 and the driving subcircuit 130 are integrated into the driving chip, and the driving chip and the parallel circuit 200 are integrated into the electric drive controller of the vehicle 1000.

[0078] The vehicle provided in the second aspect of the embodiment of the present application can implement the same process of the above-mentioned control circuit 100 embodiment and achieve the same beneficial effects. To avoid repetition, it will not be repeated here.

[0079] See also Fig.10 , is a flow chart of a control method for a parallel circuit of a silicon switch device and a silicon carbide switch device provided in an embodiment of the present application. A third aspect of an embodiment of the present application provides a control method for a parallel circuit of a silicon switch device and a silicon carbide switch device, comprising: Step S110: collecting the total current value of the parallel circuit; Step S120: determining a control mode of the parallel circuit according to the total current value; Step S130: sending a first switch control instruction to the silicon switch device and sending a second switch control instruction to the silicon carbide switch device according to the control mode; Wherein, when the total current value is greater than or equal to the first preset current threshold, the control mode is the first control mode, and the first control mode is used to control the silicon switch device to be turned on before the silicon carbide switch device is turned on and / or to be turned off after the silicon carbide switch device is turned off; When the total current value is less than the first preset current threshold, the control mode is the second control mode, and the second control mode is used to control the silicon carbide switching device to be turned on before the silicon switching device is turned on and / or to be turned off after the silicon switching device is turned off.

[0080] In some embodiments, according to the control mode, sending a first switch control instruction to a silicon switch device and sending a second switch control instruction to a silicon carbide switch device include: When the first switch control instruction and the second switch control instruction are conduction instructions, the first current value of the circuit conducted by the silicon switching device or the second current value of the circuit conducted by the silicon carbide switching device is collected, and according to the control mode and the first current value or the second current value, the first switch control instruction is sent to the silicon switching device, and the second switch control instruction is sent to the silicon carbide switching device.

[0081] In some embodiments, according to the control mode and the first current value or the second current value, sending a first switch control instruction to the silicon switch device and sending a second switch control instruction to the silicon carbide switch device include: If the control mode is the first control mode, a first control instruction is sent to the silicon switch device at a first time point, and a second control instruction is sent to the silicon carbide switch device at a time point delayed by a first delay time from the first time point; at the time point of sending the second switch control instruction, the first current value is greater than the second preset current threshold; If the control mode is the second control mode, the second control instruction is sent at the second time point, and the first control instruction is sent at a time point delayed by a second delay time from the second time point; at the sending time point of the first switch control instruction, the second current value is greater than the third preset current threshold.

[0082] In some embodiments, according to the control mode, sending a first switch control instruction to a silicon switch device and sending a second switch control instruction to a silicon carbide switch device include: When the first switch control instruction and the second switch control instruction are shutdown instructions, the first voltage value of the silicon switching device during the shutdown process or the second voltage value of the silicon carbide switching device during the shutdown process is collected, and according to the control mode, and the first voltage value or the second voltage value, the first switch control instruction is sent to the silicon switching device, and the second switch control instruction is sent to the silicon carbide switching device.

[0083] In some embodiments, according to the control mode and the first voltage value or the second voltage value, sending a first switch control instruction to the silicon switch device and sending a second switch control instruction to the silicon carbide switch device include: If the control mode is the first control mode, the second control instruction is sent at the third time point, and the first control instruction is sent at a time point delayed by a third delay time from the third time point; at the sending time point of the first switch control instruction, the second voltage value is greater than the first preset voltage threshold; If the control mode is the second control mode, the first control instruction is sent at a fourth time point, and the second control instruction is sent at a time point delayed by a fourth delay time from the fourth time point; at the sending time point of the second switch control instruction, the first voltage value is greater than the second preset voltage threshold.

[0084] The control method provided in the third aspect of the embodiment of the present application can implement the same process of the above-mentioned control circuit 100 embodiment and achieve the same beneficial effects. To avoid repetition, it will not be described here.

[0085] A fourth aspect of an embodiment of the present application provides a machine-readable storage medium, on which instructions are stored. When the instructions are executed by a processor, the processor implements the above-mentioned control method for a parallel circuit of a silicon switching device and a silicon carbide switching device.

[0086] In some embodiments, the embodiments of the present application further provide a computer program product, including a computer program, which, when executed by a processor, implements a control method for a parallel circuit of a silicon switching device and a silicon carbide switching device according to the above-mentioned embodiment.

[0087] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment in combination with software and hardware. Moreover, the present application may adopt the form of a computer program product implemented in one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) that include computer-usable program code.

[0088] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 These computer program instructions can also be stored in a computer-readable memory that can guide a computer or other programmable data processing device to work in a specific way, so that the instructions stored in the computer-readable memory produce a product including an instruction device, which implements the functions specified in the process. Figure 1 A process or multiple processes and / or boxes Figure 1 These computer program instructions can also be loaded onto a computer or other programmable data processing device, so that a series of operation steps are executed on the computer or other programmable device to produce a computer-implemented process, so that the instructions executed on the computer or other programmable device provide for implementing the process in the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0089] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0090] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0091] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transcript media), such as modulated data signals and carrier waves.

[0092] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0093] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

[0094] In addition, various embodiments of the present invention may be arbitrarily combined, and as long as they do not violate the concept of the present invention, they should also be regarded as the contents disclosed by the present invention.

Claims

1. A control circuit for a parallel circuit of a silicon switch device and a silicon carbide switch device, characterized in that: include: A total current acquisition subcircuit, the total current acquisition subcircuit is used to acquire the total current value of the parallel circuit; a logic control subcircuit, wherein a first end of the logic control subcircuit is electrically connected to the total current acquisition subcircuit, and the logic control subcircuit is used to determine a control mode of the parallel circuit according to the total current value; a driving subcircuit, wherein a first end of the driving subcircuit is electrically connected to a second end of the logic control subcircuit, a second end of the driving subcircuit is electrically connected to the silicon switch device, and a third end of the driving subcircuit is electrically connected to the silicon carbide switch device, and the driving subcircuit is used to send a first switch control instruction to the silicon switch device and send a second switch control instruction to the silicon carbide switch device; the control of the silicon switch device by the first switch control instruction and the control of the silicon carbide switch device by the second switch control instruction match the control mode; Wherein, when the total current value is greater than or equal to the first preset current threshold value, the control mode is the first control mode, and the first control mode is used to control the silicon switch device to be turned on before the silicon carbide switch device is turned on and / or to be turned off after the silicon carbide switch device is turned off; When the total current value is less than the first preset current threshold, the control mode is a second control mode, and the second control mode is used to control the silicon carbide switching device to be turned on before the silicon switching device is turned on and / or to be turned off after the silicon switching device is turned off.

2. The control circuit according to claim 1, characterized in that: The logic control subcircuit comprises: a first logic control unit, wherein a first end of the first logic control unit is electrically connected to the total current acquisition subcircuit, and the first logic control unit is used to determine a control mode of the parallel circuit according to the total current value; a second logic control unit, wherein a first end of the second logic control unit is connected to a second end of the first logic control unit, a second end of the second logic control unit is electrically connected to a first end of the driving sub-circuit, and the second logic control unit is used to control the driving sub-circuit to send the first switching control instruction and the second switching control instruction according to a sending timing of the first switching control instruction and the second switching control instruction corresponding to the control mode; Wherein, in the case where the first switch control instruction and the second switch control instruction are conduction instructions, if the control mode is the first control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the second switch control instruction is sent at a time point delayed by a first delay time from a first time point, and the first time point is the sending time point of the first switch control instruction; if the control mode is the second control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the first switch control instruction is sent at a time point delayed by a second delay time from a second time point, and the second time point is the sending time point of the second switch control instruction; In the case where the first switch control instruction and the second switch control instruction are turn-off instructions, if the control mode is the first control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the first switch control instruction is sent at a time point delayed from a third time point by a third delay time length, and the third time point is the sending time point of the second switch control instruction; if the control mode is the second control mode, the sending timing of the first switch control instruction and the second switch control instruction satisfies: the second switch control instruction is sent at a time point delayed from a fourth time point by a fourth delay time length, and the fourth time point is the sending time point of the first switch control instruction.

3. The control circuit according to claim 2, characterized in that: The control circuit further comprises: a current collection subcircuit, wherein a first end of the current collection subcircuit is electrically connected to the second logic control unit, a second end of the current collection subcircuit is electrically connected to the silicon switch device and the silicon carbide switch device, and the current collection subcircuit is used to collect a first current value of a loop conducted by the silicon switch device and a second current value of a loop conducted by the silicon carbide switch device; When the first switch control instruction and the second switch control instruction are conduction instructions, the second logic control unit is used to determine the sending timing of the first switch control instruction and the second switch control instruction according to the control mode and the first current value or the second current value; Among them, if the control mode is the first control mode, then at the time point of sending the second switch control instruction, the first current value is greater than the second preset current threshold; if the control mode is the second control mode, then at the time point of sending the first switch control instruction, the second current value is greater than the third preset current threshold.

4. The control circuit according to claim 2, characterized in that: The control circuit further comprises: a voltage collection subcircuit, wherein a first end of the voltage collection subcircuit is electrically connected to the second logic control unit, a second end of the voltage collection subcircuit is electrically connected to the silicon switch device and the silicon carbide switch device, and the voltage collection subcircuit is used to collect a first voltage value of the silicon switch device during a shutdown process and a second voltage value of the silicon carbide switch device during a shutdown process; When the first switch control instruction and the second switch control instruction are off instructions, the second logic control unit is used to determine the sending timing of the first switch control instruction and the second switch control instruction according to the control mode and the first voltage value or the second voltage value; Among them, if the control mode is the first control mode, then at the time point of sending the first switch control instruction, the second voltage value is greater than the first preset voltage threshold; if the control mode is the second control mode, then at the time point of sending the second switch control instruction, the first voltage value is greater than the second preset voltage threshold.

5. The control circuit according to claim 1, characterized in that: The driving sub-circuit comprises: a first driving unit, wherein a first end of the first driving unit is electrically connected to the logic control subcircuit, a second end of the first driving unit is electrically connected to the silicon switching device, and the first driving unit is used to send a first switch control instruction corresponding to the control mode to the silicon switching device; A second drive unit, wherein a first end of the second drive unit is electrically connected to the logic control subcircuit, a second end of the second drive unit is electrically connected to the silicon carbide switching device, and the second drive unit is used to send a second switch control instruction corresponding to the control mode to the silicon carbide switching device.

6. A vehicle, characterized in that: A control circuit comprising a parallel circuit of a silicon switching device and a silicon carbide switching device as claimed in any one of claims 1 to 5, and the parallel circuit.

7. The vehicle according to claim 6, characterized in that In the case where the logic control subcircuit includes a first logic control unit and a second logic control unit, the total current acquisition subcircuit and the first logic control unit are integrated into the main control chip of the vehicle, the second logic control unit and the drive subcircuit are integrated into the drive chip, and the drive chip and the parallel circuit are integrated into the electric drive controller of the vehicle.

8. A control method for a parallel circuit of a silicon switch device and a silicon carbide switch device, characterized in that: The method comprises: Collecting the total current value of the parallel circuit; determining a control mode of the parallel circuit according to the total current value; According to the control mode, sending a first switch control instruction to the silicon switch device, and sending a second switch control instruction to the silicon carbide switch device; Wherein, when the total current value is greater than or equal to the first preset current threshold value, the control mode is the first control mode, and the first control mode is used to control the silicon switch device to be turned on before the silicon carbide switch device is turned on and / or to be turned off after the silicon carbide switch device is turned off; When the total current value is less than the first preset current threshold, the control mode is a second control mode, and the second control mode is used to control the silicon carbide switching device to be turned on before the silicon switching device is turned on and / or to be turned off after the silicon switching device is turned off.

9. The control method according to claim 8, characterized in that: The sending of a first switch control instruction to the silicon switch device and a second switch control instruction to the silicon carbide switch device according to the control mode comprises: When the first switch control instruction and the second switch control instruction are conduction instructions, the first current value of the circuit conducted by the silicon switching device or the second current value of the circuit conducted by the silicon carbide switching device is collected, and according to the control mode and the first current value or the second current value, the first switch control instruction is sent to the silicon switching device, and the second switch control instruction is sent to the silicon carbide switching device.

10. The control method according to claim 9, characterized in that: The sending the first switch control instruction to the silicon switch device and the sending the second switch control instruction to the silicon carbide switch device according to the control mode and the first current value or the second current value comprises: If the control mode is the first control mode, the first control instruction is sent to the silicon switch device at a first time point, and the second control instruction is sent to the silicon carbide switch device at a time point delayed by a first delay time from the first time point; at the time point of sending the second switch control instruction, the first current value is greater than a second preset current threshold; If the control mode is the second control mode, the second control instruction is sent at a second time point, and the first control instruction is sent at a time point delayed by a second delay time from the second time point; at the sending time point of the first switch control instruction, the second current value is greater than the third preset current threshold.

11. The control method according to claim 8, characterized in that: The sending of a first switch control instruction to the silicon switch device and a second switch control instruction to the silicon carbide switch device according to the control mode comprises: In the case where the first switch control instruction and the second switch control instruction are shutdown instructions, the first voltage value of the silicon switching device during the shutdown process or the second voltage value of the silicon carbide switching device during the shutdown process is collected, and according to the control mode and the first voltage value or the second voltage value, the first switch control instruction is sent to the silicon switching device, and the second switch control instruction is sent to the silicon carbide switching device.

12. The control method according to claim 11, characterized in that: The sending the first switch control instruction to the silicon switch device and the sending the second switch control instruction to the silicon carbide switch device according to the control mode and the first voltage value or the second voltage value comprises: If the control mode is the first control mode, the second control instruction is sent at a third time point, and the first control instruction is sent at a time point delayed by a third delay time from the third time point; at the sending time point of the first switch control instruction, the second voltage value is greater than the first preset voltage threshold; If the control mode is the second control mode, the first control instruction is sent at a fourth time point, and the second control instruction is sent at a time point delayed by a fourth delay time from the fourth time point; at the sending time point of the second switch control instruction, the first voltage value is greater than the second preset voltage threshold.

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