Substrate processing apparatus and substrate processing method

Abstract

The connection portion of the substrate processing apparatus has an opening that connects the second space and the first space. In a substrate processing apparatus, a space including a first space and a second space communicating with each other via an opening is a processing space. The static electricity eliminating part is configured to generate plasma from the plasma generating gas supplied into the second vacuum tank, and the average free stroke of charge particles in the plasma in the processing space is shorter than the minimum size of an opening in a plane orthogonal to a plane along a direction from the second space to the first space. Therefore, the static electricity of the supporting part in the first space is eliminated.

Description

Technical Field

[0001] The invention relates to a substrate processing device and a substrate processing method. Background Art

[0002] An example of an apparatus for performing static elimination on a static elimination target located in a vacuum tank includes: a vacuum tank in which the static elimination target is arranged and a ground electrode that closes the opening of the vacuum tank. An insulating ring member is mounted on the ground electrode, and a filament and a mesh electrode are mounted on the ring member. The filament is mounted on the ring member in a manner protruding in a space surrounded by the ring member, and the mesh electrode is mounted on the ring member in a manner sandwiching the space surrounded by the ring member and the ground electrode.

[0003] In the static eliminator, a gas is supplied into a space surrounded by a ring member while current is supplied to the filament and voltage is applied to the mesh electrode, thereby generating plasma, thereby eliminating charges of the object to be eliminable in the vacuum chamber (see, for example, Patent Document 1). Prior art literature Patent Literature

[0004] Patent Document 1: Japanese Patent Application Publication No. 2021-157909 Summary of the invention Technical issues to be solved by the invention

[0005] However, a cluster tool type device as an example of a substrate processing device includes: a transport chamber and a plurality of processing chambers connected to the transport chamber via a gate valve. If the processing chamber is, for example, a sputtering chamber, the target and a carrier facing the target are located in the sputtering chamber, and an electrostatic chuck for adsorbing the substrate is located in the carrier.

[0006] The above-mentioned static elimination device must be installed in the vacuum tank where the static elimination object is arranged. Therefore, if the static elimination object is a component located in the sputtering chamber, a component such as a filament electrode or a mesh electrode for generating plasma must be installed in the sputtering chamber. However, various components for sputtering film formation are installed in the sputtering chamber, so it is difficult to install the component for generating plasma in the sputtering chamber. Therefore, it is necessary to generate plasma in a processing chamber different from the processing chamber where the static elimination object is arranged, and to be able to perform static elimination by using the plasma.

[0007] The above-mentioned problem is not limited to a cluster tool type device having a sputtering chamber, but is common to film forming devices having a processing chamber for forming films by a method other than sputtering such as CVD or a processing device for performing processes other than film formation, and having two or more vacuum tanks. Technical solutions adopted to solve technical problems

[0008] The substrate processing device for solving the above-mentioned problem comprises: a first vacuum tank defining a first space for accommodating an object to be electrostatically eliminated; a second vacuum tank defining a second space; a connection portion connecting the second vacuum tank to the first vacuum tank, and an electrostatic elimination portion for performing electrostatic elimination on the object to be electrostatically eliminated located in the first vacuum tank. The connection portion has an opening for connecting the second space with the first space. The space including the first space and the second space connected to each other by the opening is a processing space. The electrostatic elimination portion is configured to generate plasma from a plasma generating gas supplied to the second vacuum tank, and perform electrostatic elimination on the object to be electrostatically eliminated located in the first space by making the average free path of the charged particles in the plasma in the processing space shorter than the minimum dimension of the opening in a plane orthogonal to a plane along a direction from the second space toward the first space.

[0009] The substrate processing method for solving the above-mentioned problem includes: making the second space defined by the second vacuum tank connected to the first space defined by the first vacuum tank and for accommodating the static elimination object through the opening of the connecting portion connecting the second vacuum tank and the first vacuum tank, and generating plasma containing the above-mentioned charged particles by the plasma generating gas supplied into the above-mentioned second vacuum tank in a manner that the average free path of the charged particles in the processing space including the above-mentioned first space and the above-mentioned second space connected by the above-mentioned opening is shorter than the minimum dimension of the above-mentioned opening in a plane orthogonal to a plane along a direction from the above-mentioned second space toward the above-mentioned first space, thereby performing static elimination on the above-mentioned static elimination object located in the above-mentioned first space.

[0010] With the substrate processing apparatus and substrate processing method, the charged particles in the plasma easily move from the second space to the first space, so the potential of the object to be statically eliminated easily decreases, and the time required for statically eliminating the object to be statically eliminated can be shortened.

[0011] In the substrate processing apparatus, the static elimination unit may adjust the mean free path of the charged particles by the pressure in the processing space so that the mean free path is shorter than the minimum dimension of the opening.

[0012] According to the substrate processing apparatus, the mean free path of the charged particles is inversely proportional to the pressure. Therefore, if the pressure in the processing space is adjusted, the mean free path of the charged particles can be easily changed.

[0013] In the substrate processing apparatus, the static eliminator may adjust the pressure in the processing space by adjusting the flow rate of the plasma generating gas supplied into the processing space.

[0014] According to the substrate processing apparatus, the mean free path of the charged particles generated in the processing space can be changed simply by changing the flow rate of the plasma generating gas supplied into the processing space, so that the mean free path can be easily adjusted.

[0015] In the above substrate processing apparatus, the plasma generating gas may be a rare gas. With the substrate processing apparatus, the diameter of charged particles in plasma generated by a rare gas can be easily made larger than the diameter of charged particles contained in plasma generated by other inert gases, thereby making the mean free path shorter than the size of the opening. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] [ Figure 1 ] Figure 1 This is a block diagram schematically showing the structure of a cluster tool type sputtering apparatus as an example of a substrate processing apparatus. [ Figure 2 ] Figure 2 Yes Figure 1 1 is a block diagram schematically showing the structures of the transfer chamber and the first sputtering chamber included in the sputtering apparatus shown. [ Figure 3 ] Figure 3 It is a top view showing the opening provided in the connection portion. [ Figure 4 ] Figure 4 It is a plan view showing the position of a charging plate arranged on the static electricity elimination target. [ Figure 5 ] Figure 5 This is a table showing the relationship between the voltage value of the positively charged charging plate and the elapsed time from the start of the static electricity elimination process. [ Figure 6 ] Figure 6 This is a table showing the relationship between the voltage value of the negatively charged charging plate and the elapsed time from the start of the static elimination process. [ Figure 7 ] Figure 7 This is a graph showing the relationship between the voltage value of the positively charged charging plate and the elapsed time from the start of the static electricity elimination process. [ Figure 8 ] Figure 8 This is a graph showing the relationship between the voltage value of the negatively charged charging plate and the elapsed time from the start of the static electricity elimination process. [ Fig. 9 ] Fig. 9 This is a functional diagram for explaining the function of the substrate processing apparatus. [ Fig.10 ] Fig.10 This is a functional diagram for explaining the function of the substrate processing apparatus. DETAILED DESCRIPTION

[0017] Reference Figures 1 to 10 , an embodiment of a substrate processing device and a substrate processing method. [Substrate processing equipment] Reference Figures 1 to 3 , a substrate processing apparatus is described. A cluster tool type sputtering apparatus is described below as an example of a substrate processing apparatus.

[0018] like Figure 1 As shown, the cluster tool type sputtering apparatus 10 includes a transfer chamber 11, two sputtering chambers 12, a loading and unloading chamber 13, and two substrate processing chambers 14. The sputtering apparatus 10 includes a first sputtering chamber 12A and a second sputtering chamber 12B as the two sputtering chambers 12.

[0019] Each of the processing chambers 12A, 12B, 13, and 14 is connected to the transport chamber 11. A gate valve is located between the transport chamber 11 and each of the processing chambers 12A, 12B, 13, and 14. By opening the gate valve, the transport space defined by the transport chamber 11 is communicated with the processing space defined by each of the processing chambers 12A, 12B, 13, and 14. On the other hand, by closing the gate valve, the transport space of the transport chamber 11 and the processing space of each of the processing chambers 12A, 12B, 13, and 14 are separated from each other.

[0020] The transport chamber 11 includes a transport robot 11R. The transport robot 11R is configured to be able to transport substrates between each processing chamber connected to the transport chamber 11 and the transport chamber 11. The transport robot 11R transports the substrates between the transport chamber 11 and each processing chamber along a surface substantially parallel to a horizontal plane. The transport chamber 11 includes a plasma generating unit 11P that generates plasma in a transport space. The plasma generating unit 11P is located at the center of the transport chamber 11, for example, when the transport chamber 11 is viewed from above.

[0021] The carry-in / out chamber 13 is configured to carry a substrate before processing from outside the sputtering device 10 into the sputtering device 10, and to carry a substrate after processing from inside the sputtering device 10 out of the sputtering device 10. The carry-in / out chamber 13 is provided with an exhaust section 13E. When a substrate is carried in, the carry-in / out entrance of the carry-in / out chamber 13 is opened in a state where the carry-in / out chamber 13 is separated from the transport chamber 11, thereby opening the carry-in / out chamber 13 to the atmosphere. Then, after the substrate before processing is carried in from the carry-in / out entrance, the carry-in / out entrance is closed. Next, the carry-in / out chamber 13 is exhausted by the exhaust section 13E, thereby reducing the pressure in the carry-in / out chamber 13 to the same level as that in the transport chamber 11. Thereafter, the gate valve located between the carry-in / out chamber 13 and the transport chamber 11 is opened.

[0022] On the other hand, when the substrate is unloaded, after the processed substrate is loaded from the transport chamber 11 into the load-in / load-out chamber 13, the gate valve between the load-in / load-out chamber 13 and the transport chamber 11 is closed. Then, after the pressure in the load-in / load-out chamber 13 is raised to atmospheric pressure, the load-out entrance of the load-in / load-out chamber 13 is opened. Then, the processed substrate is unloaded from the load-out entrance to the outside of the sputtering device 10.

[0023] Each sputtering chamber 12A, 12B includes a cathode 20. Each sputtering chamber 12A, 12B is configured to form a thin film on the surface of a substrate by sputtering using the cathode 20. Each sputtering chamber 12A, 12B includes exhaust units 12AE, 12BE for exhausting a processing space defined by the sputtering chamber 12A, 12B.

[0024] Each substrate processing chamber 14 is configured to perform a predetermined process on the substrate. The process performed in the substrate processing chamber 14 may be a pre-processing performed on the substrate before film formation in the sputtering chambers 12A and 12B, or a post-processing performed on the substrate after film formation in the sputtering chambers 12A and 12B. The pre-processing and post-processing may be, for example, a heating process or a cooling process. Each substrate processing chamber 14 is provided with an exhaust section 14E for exhausting the processing space defined by the substrate processing chamber 14.

[0025] Reference Figure 2 , the transfer chamber 11 and the first sputtering chamber 12A are described in more detail. Figure 2 For the convenience of illustration, the distance between the plasma generating unit 11P and the first sputtering chamber 12A is Figure 1 The distance between the plasma generating section 11P and the first sputtering chamber 12A is shorter.

[0026] like Figure 2 As shown, the transport chamber 11 defines a transport space 11S for transporting the substrate Sb. The first sputtering chamber 12A defines a first film forming space 12AS. The sputtering device 10 includes a connection portion 10P connecting the transfer chamber 11 and the first sputtering chamber 12A. The connection portion 10P has an opening 10PA (see FIG. 1 ) that connects the transfer space 11S of the transfer chamber 11 and the first film forming space 12AS of the first sputtering chamber 12A. Figure 3 ). The gate valve 10G is located at the connection portion 10P. Since the gate valve 10G is opened, the opening 10PA is opened, and thus the first film forming space 12AS is connected to the transport space 11S through the opening 10PA. In contrast, since the gate valve 10G is closed, the opening 10PA is blocked, and thus the first film forming space 12AS is separated from the transport space 11S. The space defined by the connection portion 10P connecting the transport space 11S and the first film forming space 12AS, which are connected to each other through the opening 10PA, is included in the processing space together with the transport space 11S and the first film forming space 12AS.

[0027] The transport chamber 11 includes a vacuum chamber 11C that defines a transport space 11S. The vacuum chamber 11C is an example of a second vacuum chamber, and the transport space 11S is an example of a second space. The transport chamber 11 includes a plasma generating unit 11P as described above. The plasma generating unit 11P generates plasma from a plasma generating gas supplied into the transport space 11S. The plasma generating unit 11P is, for example, a microwave plasma source.

[0028] The first sputtering chamber 12A includes a vacuum tank 12AC that defines a first film-forming space 12AS. The vacuum tank 12AC is an example of a first vacuum tank, and the first film-forming space 12AS is an example of a first space for accommodating an object to be electrostatically eliminated. The first sputtering chamber 12A includes a cathode 20 as described above. The cathode 20 includes a target 21 and a backing plate 22. The target 21 is formed of, for example, a metal, a metal compound, or a mixture of a metal and a metal compound. The target 21 includes a sputtered surface that is sputtered when a film is formed on a substrate Sb. The backing plate 22 is bonded to the target 21. The backing plate 22 is conductive. The cathode 20 is mounted on one side of a side wall portion that defines the first film-forming space 12AS. At least the sputtered surface of the target 21 in the cathode 20 is exposed to the first film-forming space 12AS.

[0029] A target power source 23 is connected to the backing plate 22. The target power source 23 applies a voltage to the backing plate 22, thereby applying a voltage to the target 21 connected to the backing plate 22. The target power source 23 may be, for example, a DC power source or an AC power source.

[0030] The first sputtering chamber 12A includes a support portion 31 and an adsorption portion 32. The support portion 31 is an example of an object to be statically eliminated. The support portion 31 includes a support surface 31F that supports the substrate Sb. The support surface 31F may be formed of a material different from the material of the surface of the substrate Sb that contacts the support surface 31F. For example, the support surface 31F may be formed of aluminum oxide, and the substrate Sb is a glass substrate. For example, the support portion 31 has a flat plate shape, and the support surface 31F is a flat surface provided by the support portion 31.

[0031] The adsorption unit 32 is located in the support unit 31. The adsorption unit 32 electrostatically adsorbs the substrate Sb located on the support surface 31F to the support surface 31F. The adsorption unit 32 is an electrostatic chuck that adsorbs the substrate Sb using electrostatic force.

[0032] The first sputtering chamber 12A includes a position changing portion 33. The position changing portion 33 is configured to change the position of the support portion 31 relative to the cathode 20. The position changing portion 33 changes the position of the support portion 31 between the first position and the second position. When the support portion 31 is located at the first position, the support surface 31F is approximately orthogonal to the cathode 20. That is, when the support portion 31 is located at the first position, the support surface 31F is located in an approximately horizontal direction. In contrast, when the support portion 31 is located at the second position, the support surface 31F is approximately parallel to the cathode 20. That is, when the support portion 31 is located at the second position, the support surface 31F is located in an approximately vertical direction.

[0033] The first sputtering chamber 12A is further provided with a gas introduction part 34. The gas introduction part 34 is a gas introduction port of the vacuum tank 12AC. The gas introduction part 34 is connected to a gas cylinder located outside the sputtering device 10 via a mass flow controller. The gas introduction part 34 introduces a plasma generating gas into the first film forming space 12AS. The plasma generating gas is, for example, an inert gas. The inert gas may also be a rare gas or nitrogen. The rare gas may also be, for example, argon or helium. Plasma containing charged particles is generated by the plasma generating gas. In the present invention, charged particles refer to particles having a charge other than electrons. For example, if argon is the plasma generating gas, positively charged argon ions are an example of charged particles. If helium is the plasma generating gas, positively charged helium ions are an example of charged particles.

[0034] The gas introduction part 34 may also include a conductance valve. The conductance valve sets the flow rate of the gas flowing into the first film forming space 12AS through the gas introduction part 34 by the opening degree. By changing the opening degree of the conductance valve from the first opening degree to the second opening degree, the flow rate of the gas flowing into the first film forming space 12AS changes from the first flow rate to the second flow rate.

[0035] When the support portion 31 is located at the second position, and the support surface 31F is located in a substantially vertical direction, the gas introduction portion 34 is located, for example, between the support portion 31 and the target 21 when viewed from a perspective opposite to the horizontal plane. The gas introduction portion 34 is located, for example, at the upper wall of the vacuum chamber 12AC. At this time, the gas introduction portion 34 introduces gas into the first film forming space 12AS along a direction from the upper side to the lower side in the vertical direction.

[0036] The vacuum tank 12AC is further provided with an exhaust port 35 connected to the exhaust section 12AE. The first sputtering chamber 12A may also include a conductance valve between the exhaust port 35 and the exhaust section 12AE. The conductance valve sets the exhaust flow rate by the opening degree. By changing the opening degree of the conductance valve from the first opening degree to the second opening degree, the exhaust flow rate is changed from the first flow rate to the second flow rate.

[0037] When film formation is performed on the substrate Sb, the pressure in the first film forming space 12AS is adjusted to a predetermined pressure by the exhaust gas generated by the exhaust unit 12AE and the plasma generating gas introduced from the gas introduction unit 34. The pressure in the first film forming space 12AS can be, for example, 1×10 -1 Pa or above 1×10 1 Pa or less. The pressure in the first film forming space 12AS during film formation may be the same as the pressure in the first film forming space 12AS during static elimination in the first sputtering chamber 12A.

[0038] When the support portion 31 is subjected to static elimination, the pressure in the first film forming space 12AS is adjusted to a predetermined pressure by the exhaust gas generated by the exhaust portion 12AE and the plasma generating gas introduced from the gas inlet portion 34. When the support portion 31 is subjected to static elimination, the gate valve 10G is opened and the opening 10PA is opened, so that the pressure in the first film forming space 12AS is approximately equal to the pressure in the transport space 11S. Therefore, the pressure in the processing space including the first film forming space 12AS and the transport space 11S is approximately uniform. Therefore, the mean free path of the charged particles in the first film forming space 12AS can be regarded as equal to the mean free path of the charged particles in the transport space 11S, and also equal to the mean free path of the charged particles in the processing space. When the support portion 31 is subjected to static elimination, the pressure in the first film forming space 12AS can be, for example, 1×10 -1 Pa or above 1×10 1 Below Pa.

[0039] Figure 3 The plan view structure of the opening 10PA included in the connection portion 10P is shown. Figure 3 The structure of the opening 10PA on the plane perpendicular to the plane along the direction from the transfer chamber 11 toward the first sputtering chamber 12A. That is, Figure 3 The structure of the opening 10PA on a plane perpendicular to the plane extending in the direction of the connection portion 10P connecting the transfer chamber 11 to the first sputtering chamber 12A is shown. Figure 1 and Figure 2 The connection portion 10P shown has a cylindrical shape extending in the direction from the transfer chamber 11 toward the first sputtering chamber 12A, and the inner surface of the connection portion 10P defines a passage for the transfer robot 11R on which the substrate Sb is placed.

[0040] Figure 3The plate member 10PB shown is located in the passage defined by the connection portion 10P. The plate member 10PB has an opening 10PA. The outer edge of the plate member 10PB contacts the inner surface of the connection portion 10P, thereby sealing the portion other than the opening 10PA in the plane including the plate member 10PB and in the passage defined by the connection portion 10P. Therefore, the transport space 11S is connected to the first film forming space 12AS via the opening 10PA.

[0041] In this embodiment, the opening 10PA has a rectangular shape. Figure 3 In the example shown, the four corners of the opening 10PA have a curvature whose center of curvature is located within the opening 10PA. Since the opening 10PA has a rectangular shape, the length of the short side 10PAS in the opening 10PA is equivalent to the minimum dimension Lm of the opening 10PA. The opening 10PA is not limited to a rectangular shape, and may also have a polygonal shape other than a rectangular shape. Polygonal shapes other than a rectangular shape include, for example, a square shape, a diamond shape, and a hexagonal shape. The opening 10PA may also have a circular shape.

[0042] The minimum size of the opening 10PA refers to the length of the line segment that passes through the geometric center of the outer edge of the opening 10PA and connects the first point and the second point of the outer edge. Therefore, for example, if the opening 10PA has a square shape, the length of the line segment that passes through the geometric center of the outer edge of the opening 10PA and connects a pair of parallel sides of the outer edge is the minimum size of the opening 10PA. In addition, if the opening 10PA has a circular shape, the line segment that passes through the geometric center of the outer edge of the opening 10PA and connects two points on the circumference, that is, the diameter of the circle is the minimum size of the opening 10PA.

[0043] In the sputtering device 10 of the present embodiment, the static elimination unit generates plasma from the plasma generating gas supplied into the transport chamber 11. At this time, the static elimination is performed on the support portion 31 located in the first film forming space 12AS by making the mean free path of the charged particles in the plasma shorter than the minimum dimension Lm of the opening 10PA in the processing space. As a result, the charged particles in the plasma easily move from the transport space 11S toward the first film forming space 12AS, so that the potential of the support portion 31, that is, the absolute value of the potential of the support portion 31, is easily reduced, and the time required for the static elimination of the support portion 31 can be shortened. That is, the static elimination of the support portion 31 is easy.

[0044] The mean free path λ of the charged particles is calculated by the following formula (1).

[0045] [Number 1]

[0046] In formula (1), 2r is the diameter of the charged particle and n is the particle number density. Therefore, the mean free path is inversely proportional to the pressure according to the following formula (2).

[0047] [Number 2] p=n·k·T···Formula (2)

[0048] In formula (2), p is the pressure, n is the particle number density, k is the Boltzmann constant, and T is the thermodynamic temperature.

[0049] The static elimination unit can adjust the mean free path of the charged particles by adjusting the pressure in the processing space so that the mean free path of the charged particles is shorter than the minimum dimension Lm of the opening 10PA. As can be seen from the above equations (1) and (2), the mean free path of the charged particles is inversely proportional to the pressure, so if the pressure in the processing space is adjusted, the mean free path of the charged particles can be easily changed.

[0050] The static elimination unit can also adjust the pressure in the processing space by the flow rate of the plasma generating gas supplied to the processing space. In this case, the mean free path of the charged particles generated in the processing space can be changed only by changing the flow rate of the plasma generating gas supplied to the processing space, so the mean free path can be easily adjusted.

[0051] The plasma generating gas may be a rare gas. In the plasma generated by the rare gas, the diameter of the charged particles is likely to be larger than the diameter of the charged particles contained in the plasma generated using other inert gases. Therefore, the mean free path is likely to be shorter than the size of the opening 10PA.

[0052] [Substrate processing method] The substrate processing method of the present embodiment includes: connecting the first film forming space 12AS with the conveying space 11S and performing static elimination on the support portion 31 located in the first film forming space 12AS. In connecting the first film forming space 12AS with the conveying space 11S, the conveying space 11S is connected to the first film forming space 12AS via the opening 10PA of the connecting portion 10P. In performing static elimination on the support portion 31, plasma is generated by the plasma generating gas supplied into the conveying chamber 11 in such a manner that the mean free path of the charged particles in the plasma in the processing space is shorter than the minimum dimension of the opening 10PA, thereby performing static elimination on the support portion 31. The substrate processing method of the present embodiment is described in more detail below.

[0053] When the static electricity of the support part 31 is eliminated, the gate valve 10G is opened in a state where the exhaust part 12AE provided in the first sputtering chamber 12A reduces the pressure in the first film forming space 12AS to a predetermined pressure. Thus, since the opening 10PA is opened, the transport space 11S defined by the transport chamber 11 is also reduced in pressure together with the first film forming space 12AS by the exhaust part 12AE. After a predetermined period of time has passed since the gate valve 10G was opened, the plasma generating gas is introduced into the first film forming space 12AS by the gas introduction part 34. The timing of starting to introduce the plasma generating gas into the first film forming space 12AS is preferably set after a period of time has passed in which the transport space 11S is reduced in pressure to the same degree as the first film forming space 12AS. By introducing the plasma generating gas into the first film forming space 12AS, the plasma generating gas is also introduced into the transport space 11S through the opening 10PA.

[0054] After a predetermined period of time has passed since the introduction of the plasma generating gas, microwave power is supplied to the plasma generating unit 11P, thereby generating plasma from the plasma generating gas in the transport space 11S. Charged particles in the plasma are supplied from the transport space 11S to the first film forming space 12AS via the opening 10PA, thereby eliminating static electricity from the support portion 31 that is the object of static elimination. That is, in the sputtering device 10 of the present embodiment, the static elimination unit that eliminates static electricity from the support portion 31 located in the first film forming space 12AS includes the gas introduction unit 34, the exhaust unit 12AE, and the plasma generating unit 11P.

[0055] The static elimination of the support portion 31 is performed during the period when the support portion 31 is not electrostatically adsorbing the substrate Sb. Therefore, the static elimination of the support portion 31 is performed between the film forming process on the first substrate Sb and the film forming process on the second substrate Sb. The static elimination of the support portion 31 can be performed each time the film forming process is performed on the substrate Sb, or each time the film forming process is performed on multiple substrates Sb.

[0056] [Test example] Reference Figures 4 to 10 , describing the test example. Figure 4 It is a plan view showing the position of the charging plate arranged on the support portion 31 .

[0057] like Figure 4As shown, in Experimental Examples 1 to 3, charged plates are arranged one by one at the four corners of the support portion 31 having a square shape. In the direction from the transport chamber 11 toward the first sputtering chamber 12A, among the four corners of the support portion 31, the third plate P3 is arranged at the first corner, and the fourth plate P4 is arranged at the second corner. In addition, in the direction from the transport chamber 11 toward the first sputtering chamber 12A, among the four corners of the support portion 31, the first plate P1 is arranged at the first corner, and the second plate P2 is arranged at the second corner.

[0058] Therefore, the distance from the plasma generating part 11P to each charged plate is substantially equal between the first plate P1 and the second plate P2, and substantially equal between the third plate P3 and the fourth plate P4. The distance between the plasma generating part 11P and the first plate P1 is 3750 mm, and the distance between the plasma generating part 11P and the second plate P2 is 3820 mm. The distance between the plasma generating part 11P and the third plate P3 is 2850 mm, and the distance between the plasma generating part 11P and the fourth plate P4 is 2940 mm.

[0059] [Test Example 1] In the cluster tool type sputtering device 10, plasma is generated in the processing space in a state where the opening 10PA is opened. The conditions for plasma generation are set as follows.

[0060] ·Pressure in processing space: 6.8×10 -2 Pa · Plasma generation gas: Argon · Flow rate of plasma generation gas: 11.12 sccm Average free travel: 105mm Minimum size of opening 10PA: 250mm

[0061] [Test Example 2] In Experimental Example 2, among the conditions for plasma generation in Experimental Example 1, the pressure and mean free path in the processing space were changed as shown below, and the flow rate of the plasma generation gas was set as shown below. At this time, the opening of the conduction valve between the exhaust port and the exhaust part was changed from the opening of Experimental Example 1. Other than that, plasma was generated under the same conditions as in Experimental Example 1.

[0062] ·Pressure in processing space: 1.1×10 -2 Pa · Flow rate of plasma generation gas: 11.12 sccm Average free travel: 650mm

[0063] [Test Example 3] In Experimental Example 3, among the conditions for plasma generation in Experimental Example 1, the pressure and mean free path in the processing space were changed as shown below, and the flow rate of the plasma generation gas was set as shown below. At this time, the opening of the conduction valve between the exhaust port and the exhaust part was changed from the opening of Experimental Example 1. Other than that, plasma was generated under the same conditions as in Experimental Example 1.

[0064] ·Pressure in processing space: 6.1×10 -3 Pa · Flow rate of plasma generation gas: 11.12 sccm Average free travel: 1170mm

[0065] [Evaluation methods and evaluation results] In each test example, after plasma was generated in the processing space with the initial voltage value of each charged plate set to approximately +1.2 V, the time-dependent change in the voltage value of each charged plate from the moment when plasma generation started was measured. In addition, after plasma was generated in the processing space with the initial voltage value of each charged plate set to approximately -1.2 V, the time-dependent change in the voltage value of each charged plate from the moment when plasma generation started was measured.

[0066] When the initial voltage value of the first plate P1 is set to approximately +1.2 V, the voltage value changes with time as shown in the following figure. Figure 5 In addition, when the initial voltage value of the first plate P1 is set to about -1.2V, the voltage value changes with time as shown in Figure 6 When the initial voltage value of the fourth plate P4 is set to about +1.2V, the voltage value changes with time as shown in FIG. Figure 7 In addition, when the initial voltage value of the fourth plate P4 is set to about -1.2V, the voltage value changes with time as shown in Figure 8 shown.

[0067] like Figure 5 and Figure 6 As shown, regardless of the positive or negative initial voltage value in the first plate P1, in Test Example 1, it was found that if the generation of plasma was started, the voltage value of the first plate P1 rapidly approached 0V during a period of less than 1 second from the start. In contrast, regardless of the positive or negative initial voltage value in the first plate P1, it was found that the change speed in the voltage value of the first plate P1 was low in Test Examples 2 and 3. In addition, in Test Examples 2 and 3, it was found that the change in the voltage value of the first plate P1 stopped when the voltage value of the first plate P1 did not reach 0V at a time when about 30 seconds had passed from the start of plasma generation. In Test Examples 2 and 3, it was found that if the initial voltage value in the first plate P1 was negative, the change in the voltage value of the first plate P1 stopped when the deviation of the voltage value of the first plate P1 from 0V was large.

[0068] like Figure 7 and Figure 8 As shown, regardless of the positive or negative initial voltage value in the fourth plate P4, in Test Example 1, it was found that if the generation of plasma was started, the voltage value of the first plate P1 rapidly approached 0V during a period of about 1 second from the start. However, it was found that the deviation of the voltage value in the fourth plate P4 from 0V was greater than the deviation of the voltage value in the first plate P1 from 0V. In contrast, regardless of the positive or negative initial voltage value in the fourth plate P4, it was found in Test Examples 2 and 3 that the change speed in the voltage value of the fourth plate P4 was low. In addition, in Test Examples 2 and 3, it was found that if the initial voltage value of the fourth plate P4 was negative, the change in the voltage value of the fourth plate P4 stopped at a time of about 20 seconds from the start of plasma generation. At this time, it was found that the voltage value of the fourth plate P4 did not reach 0V. In addition, in Test Examples 2 and 3, it was found that the change in the voltage value of the fourth plate P4 stopped in a state where the deviation of the voltage value of the fourth plate P4 from 0V was large.

[0069] As shown above, it is found that if the mean free path of the charged particles is longer than the minimum size of the opening 10PA, especially when the initial voltage value of the charged plate is negative, the charged plate is not easily eliminated by static electricity. In contrast, if the mean free path of the charged particles is shorter than the minimum size of the opening 10PA, static electricity is eliminated equally regardless of the positive or negative initial voltage value of the charged plate, so it can be considered that the difference between the mobility of electrons and the mobility of ions is suppressed. In addition, the effect caused by the mean free path of the charged particles being smaller than the minimum size of the opening 10PA is more obvious when the initial voltage value of the charged plate is negative, that is, it is more obvious in static electricity elimination by ions.

[0070] The temporal change of the voltage value at the second plate P2 has the same tendency as the temporal change of the voltage value at the first plate P1. In addition, the temporal change of the voltage value at the third plate P3 has the same tendency as the temporal change of the voltage value at the fourth plate P4.

[0071] Reference Fig. 9 and Fig.10 , the function of the substrate processing device is explained. Fig. 9 The figure shows the behavior of the charged particles estimated when the mean free path of the charged particles is longer than the minimum dimension Lm of the opening 10PA. Fig.10 The figure shows the behavior of the charged particles estimated when the mean free path of the charged particles is shorter than the minimum dimension Lm of the opening 10PA.

[0072] Fig. 9As shown, if the mean free path of the charged particles CP is greater than the minimum dimension Lm of the opening 10PA, the charged particles CP are unlikely to collide with other particles in the processing space before and after the charged particles CP pass through the opening 10PA. Thus, since the trajectory of the charged particles CP is unlikely to change, the charged particles CP are unlikely to reach the support portion 31.

[0073] In contrast, Fig.10 As shown in FIG. 1 , if the mean free path of the charged particles CP is shorter than the minimum dimension Lm of the opening 10PA, the charged particles CP are likely to collide with other particles existing in the processing space before and after the charged particles CP pass through the opening 10PA. Thus, since the trajectory of the charged particles CP is likely to change, the proportion of the charged particles CP reaching the support portion 31 is likely to increase among the charged particles CP.

[0074] As described above, according to one embodiment of the substrate processing apparatus and the substrate processing method, the following effects can be obtained. (1) Since the charged particles CP in the plasma easily move from the transfer space 11S toward the first film forming space 12AS, the potential of the support portion 31 easily decreases, and the time required for static elimination of the support portion 31 can be shortened.

[0075] (2) The mean free path of the charged particles CP is inversely proportional to the pressure. Therefore, if the pressure in the processing space is adjusted, the mean free path of the charged particles CP can be easily changed.

[0076] (3) Since the mean free path of the charged particles generated in the processing space can be changed simply by changing the flow rate of the plasma generating gas supplied into the processing space, the mean free path can be easily adjusted.

[0077] (4) In plasma generated from a rare gas, the diameter of charged particles can be easily made larger than the diameter of charged particles contained in plasma generated using other inert gases. Therefore, the mean free path can be easily made shorter than the size of the opening 10PA.

[0078] The above-mentioned embodiments may be modified and implemented as follows. [Static elimination department] The mean free path of the charged particles may be changed from the first value to the second value by changing at least one of the flow rate of the plasma generating gas, the type of the plasma generating gas, the opening of the conduction valve between the exhaust port 35 and the exhaust section 12AE, and the exhaust flow rate of the exhaust section 12AE. That is, the mean free path of the charged particles may be adjusted by only one of the flow rate of the plasma generating gas, the type of the plasma generating gas, the opening of the conduction valve between the exhaust port 35 and the exhaust section 12AE, and the exhaust flow rate of the exhaust section 12AE, or may be adjusted by any two or more of them.

[0079] [Sputtering device] The sputtering device may also be configured to include a plurality of processing chambers arranged in one direction, and the substrate to be processed is transported in the sputtering device along a plane substantially parallel to the vertical plane. In this case, the plasma for static elimination may be generated in such a manner that the mean free path of the particles is shorter than the minimum dimension of the opening between the second vacuum chamber for generating the plasma for static elimination and the first vacuum chamber, thereby obtaining the effect of (1) above.

[0080] [Substrate processing equipment] The substrate processing apparatus of the present invention may be a film forming apparatus other than a sputtering apparatus. The substrate processing apparatus may be, for example, a CVD apparatus. Alternatively, the substrate processing apparatus of the present invention may be a substrate processing apparatus that performs a process other than film forming on a substrate. The substrate processing apparatus may be, for example, an etching apparatus. Explanation of symbols

[0081] 10: Sputtering device 11: Transport room 12: Sputtering chamber 12A: No. 1 Sputtering Chamber 12B: 2nd sputtering chamber

Claims

1. A substrate processing device, wherein: have: A first vacuum tank defining a first space for accommodating an object to be electrostatically eliminated; a second vacuum tank defining a second space; a connecting portion connecting the second vacuum chamber to the first vacuum chamber, and a static elimination unit for eliminating static electricity on the static elimination target located in the first vacuum chamber, The connecting portion has an opening that connects the second space with the first space. The space including the first space and the second space communicated with each other through the opening is a processing space. The static elimination section is configured to generate plasma from a plasma generating gas supplied into the second vacuum chamber, and to perform static elimination on the static elimination object located in the first space by making the average free path of the charged particles in the plasma in the processing space shorter than the minimum dimension of the opening in a plane orthogonal to a plane extending in a direction from the second space toward the first space.

2. The substrate processing apparatus according to claim 1, wherein: The static elimination unit adjusts the mean free path of the charged particles by the pressure of the processing space so that the mean free path is shorter than the minimum dimension of the opening.

3. The substrate processing apparatus according to claim 2, wherein: The static elimination unit adjusts the pressure in the processing space by adjusting the flow rate of the plasma generating gas supplied into the processing space.

4. The substrate processing apparatus according to any one of claims 1 to 3, wherein: The plasma generating gas is a rare gas.

5. A substrate processing method, wherein: Include: The second space defined by the second vacuum tank is connected to the first space defined by the first vacuum tank and for accommodating the static elimination target through the opening of the connection portion connecting the second vacuum tank and the first vacuum tank, and In a processing space including the first space and the second space connected through the opening, a mean free path of charged particles is shorter than a minimum dimension of the opening in a plane orthogonal to a plane extending in a direction from the second space toward the first space, and plasma including the charged particles is generated by a plasma generating gas supplied into the second vacuum chamber, thereby performing static elimination on the static elimination object located in the first space.

Images