High-temperature high-volume-resistivity electrostatic chuck ceramic plate and preparation method thereof

Abstract

The invention discloses a high-temperature high-volume-resistivity electrostatic chuck ceramic plate and a preparation method thereof, and belongs to the technical field of electrostatic chucks, the electrostatic chuck ceramic plate is an aluminum nitride ceramic plate, and the electrostatic chuck ceramic plate comprises the following components: aluminum nitride powder, Sm or La or Y or AIN mixed with the aluminum nitride powder, and an auxiliary agent, the amount of the added Sm, La, Y or AIN is 2% wt, and the auxiliary agent is any one or a mixture of two or more of a solvent, a dispersing agent, a defoaming agent, a binding agent, a binding agent and a flatting agent. The preparation method of the electrostatic chuck ceramic plate comprises the following steps: preparing an electrostatic chuck ceramic plate preparation material; ball milling: mixing the raw materials and then carrying out ball milling; defoaming: defoaming after ball milling; casting: setting the casting speed and each temperature; laminating: laminating and discharging glue after tape casting; discharging glue after laminating; sintering: sintering in a sintering furnace after glue discharging.

Description

Technical Field

[0001] The invention relates to the technical field of electrostatic chucks, and in particular to a high-temperature and high-volume resistivity electrostatic chuck ceramic plate and a preparation method thereof. Background Art

[0002] Aluminum nitride ceramic electrostatic chucks are widely used at home and abroad because their resistivity and thermal conductivity are better than those of alumina ceramic electrostatic chucks. However, if the volume resistivity of the ceramic needs to be further improved, various elements need to be added before the ceramic is formed. Currently, the most widely used is Y2O3. After addition, yttrium aluminate phase will gradually form during the sintering process, which will be enriched at the grain boundaries of aluminum nitride and replace oxygen elements, thereby increasing the volume resistivity.

[0003] According to various tests conducted by scholars at home and abroad, Sm and La will also affect the volume resistivity of ceramics. Taking Sm2O3-AlN·Sm system materials as an example, since the microstructure of the secondary phase can control the electrical properties, it is used to study the improvement of volume resistivity. However, in the prior art, there is a lack of research on the elements added to aluminum nitride powder and the changes and laws of volume resistivity at different temperatures. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a high-temperature and high-volume resistivity electrostatic chuck ceramic plate and a preparation method thereof, so as to improve the volume resistivity of the electrostatic chuck.

[0005] In order to solve the above technical problems, the technical solution of the present invention is:

[0006] On the one hand, the present invention discloses a high-temperature and high-volume resistivity electrostatic chuck ceramic plate, wherein the electrostatic chuck ceramic plate is an aluminum nitride ceramic plate, and the electrostatic chuck ceramic plate comprises the following components: aluminum nitride powder, Sm or La or Y or AIN mixed with the aluminum nitride powder, and an additive, wherein the amount of the added Sm or La or Y or AIN is 2%wt, and the additive is any one of a solvent, a dispersant, a defoaming agent, a binder, a binder, and a leveling agent, or a mixture of two or more thereof.

[0007] Preferably, the electrostatic chuck ceramic plate comprises the following components: aluminum nitride powder, Sm powder mixed with the aluminum nitride powder, the amount of the Sm powder added is 2%wt, and the auxiliary agent is any one of a solvent, a dispersant, a defoamer, a binder, a binder, and a leveling agent.

[0008] Another aspect of the present invention discloses a method for preparing a high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the preparation method using the components described in claim 1 or 2 as raw materials, the preparation method comprising:

[0009] Prepare materials for preparing the electrostatic chuck ceramic plate: aluminum nitride powder, Sm or La or Y or AIN mixed with the aluminum nitride powder, and an additive;

[0010] Ball milling: After mixing the above raw materials, ball milling is performed for 19 to 29 hours at a rotation speed of 60 to 180 RPM at room temperature;

[0011] Degassing: Degassing is performed after ball milling, and the degassing time is 0.5 to 2 hours;

[0012] Casting: Casting speed and temperature settings match the boiling point of the solvent in various additives. The casting speed is 0.1m / min~0.55m / min, the setting temperature is 50℃~120℃, and the viscosity during casting is 5000cp~12000cp;

[0013] Lamination: Lamination is carried out after casting, the lamination temperature is 40℃~70℃, the pressure is 5~10mpa, and the holding time is 10~20min;

[0014] Debinding: Debinding after lamination, the debinding temperature is 400-600℃, and the maximum temperature holding time is 30-60min;

[0015] Sintering: After debinding, sinter in a sintering furnace. The maximum sintering temperature is 1800℃ and the maximum temperature holding time is 60min.

[0016] Resistivity test: The sintered bodies formed by the above process were ground and cut into discs with a diameter of 50 mm and a thickness of 1 mm, and then the volume resistivity test was carried out.

[0017] Preferably, in the resistivity test step, when the wafer is subjected to a volume resistivity test, the volume resistivity test is performed at 150° C., 300° C., 450° C., 600° C. and room temperature.

[0018] The above technical solution has the following beneficial effects:

[0019] Aluminum nitride powder with Sm, La, Y or AlN added is prepared into a ceramic sheet, the preparation conditions are controlled, and then the volume resistivity of the ceramic sheets with different elements added is tested. The tests are performed at different temperatures, and the volume resistivity test is better, so that a high volume resistivity electrostatic chuck is prepared. DETAILED DESCRIPTION

[0020] The specific embodiments of the present invention are further described below. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in each embodiment of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0021] Example 1

[0022] A high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the electrostatic chuck ceramic plate is an aluminum nitride ceramic plate, the electrostatic chuck ceramic plate comprises the following components: aluminum nitride powder, Sm powder mixed with aluminum nitride powder, and an additive, the amount of the added Sm powder is 2%wt, the additive is any one of a solvent, a dispersant, a defoamer, a binder, a binder, and a leveling agent, or a mixture of two or more thereof.

[0023] Example 2

[0024] A high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the electrostatic chuck ceramic plate is an aluminum nitride ceramic plate, the electrostatic chuck ceramic plate comprises the following components: aluminum nitride powder, La powder mixed with the aluminum nitride powder, and an additive, the amount of the added La powder is 2%wt, the additive is any one of a solvent, a dispersant, a defoamer, a binder, a binder, and a leveling agent, or a mixture of two or more thereof.

[0025] Example 3

[0026] A high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the electrostatic chuck ceramic plate is an aluminum nitride ceramic plate, the electrostatic chuck ceramic plate comprises the following components: aluminum nitride powder, Y powder mixed with aluminum nitride powder, and an additive, the amount of the added Y powder is 2%wt, and the additive is any one of a solvent, a dispersant, a defoamer, a binder, a binder, and a leveling agent, or a mixture of two or more thereof.

[0027] Example 4

[0028] A high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the electrostatic chuck ceramic plate is an aluminum nitride ceramic plate, the electrostatic chuck ceramic plate comprises the following components: aluminum nitride powder, 2%wtAIN powder mixed with aluminum nitride powder, and an auxiliary agent, in which 2%wtAIN powder is added as a control embodiment, the auxiliary agent is any one of a solvent, a dispersant, a defoamer, a binder, a binder, and a leveling agent, or a mixture of two or more thereof.

[0029] Ceramic disks were prepared using Examples 1 to 4 as raw materials for volume resistivity testing. The volume resistivity testing was performed at 150° C., 300° C., 450° C., 600° C. and room temperature, respectively. The results are shown in Table 1 below.

[0030] Table 1:

[0031]

[0032] It can be seen from Table 1 above that the volume resistivity performance of the ceramic matrix doped with Sm is basically better than that of the ceramic matrix doped with La, Y and undoped; the volume resistivity performance of the ceramic matrix doped with Sm, La, and Y is basically better than that of the undoped ceramic matrix. Therefore, when preparing an electrostatic chuck with high volume resistivity, a ceramic disk can be prepared by adding Sm powder to aluminum nitride ceramic powder.

[0033] Example 5

[0034] A method for preparing a high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the preparation method comprising:

[0035] Prepare the materials for preparing the electrostatic chuck ceramic plate: aluminum nitride powder, Sm or La or Y or AIN mixed with aluminum nitride powder, and additives;

[0036] Ball milling: the above raw materials are mixed and then ball milled for 19 hours at a rotation speed of 60 RPM at room temperature;

[0037] Degassing: Degassing is performed after ball milling, and the degassing time is 0.5h;

[0038] Casting: The casting speed and temperature settings match the boiling points of the solvents in various additives. The casting speed is 0.1m / min, the set temperature is 50°C, and the viscosity during casting is 5000cp;

[0039] Lamination: Lamination is performed after casting. The lamination temperature is 40°C, the pressure is 5 MPa, and the holding time is 10 minutes.

[0040] Debinding: Debinding after lamination, the debinding temperature is 400℃, and the maximum temperature holding time is 30min;

[0041] Sintering: After debinding, sinter in a sintering furnace. The maximum sintering temperature is 1800℃ and the maximum temperature holding time is 60min.

[0042] Resistivity test: The sintered bodies formed by the above process were ground and cut into discs with a diameter of 50 mm and a thickness of 1 mm, and then the volume resistivity test was carried out.

[0043] Example 6

[0044] A method for preparing a high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the preparation method comprising:

[0045] Prepare the materials for preparing the electrostatic chuck ceramic plate: aluminum nitride powder, Sm or La or Y or AIN mixed with aluminum nitride powder, and additives;

[0046] Ball milling: the above raw materials are mixed and then ball milled for 29 hours at a rotation speed of 180 RPM at room temperature;

[0047] Degassing: Degassing is performed after ball milling, and the degassing time is 2h;

[0048] Casting: The casting speed and temperature settings match the boiling points of the solvents in various additives. The casting speed is 0.55m / min, the set temperature is 120℃, and the viscosity during casting is 12000cp;

[0049] Lamination: Lamination is performed after casting. The lamination temperature is 70°C, the pressure is 10mpa, and the holding time is 20min.

[0050] Debinding: Debinding after lamination, the debinding temperature is 600℃, and the maximum temperature holding time is 60min;

[0051] Sintering: After debinding, sinter in a sintering furnace. The maximum sintering temperature is 1800℃ and the maximum temperature holding time is 60min.

[0052] Resistivity test: The sintered bodies formed by the above process were ground and cut into discs with a diameter of 50 mm and a thickness of 1 mm, and then the volume resistivity test was carried out.

[0053] Example 7

[0054] A method for preparing a high-temperature and high-volume resistivity electrostatic chuck ceramic plate, the preparation method comprising:

[0055] Prepare the materials for preparing the electrostatic chuck ceramic plate: aluminum nitride powder, Sm or La or Y or AIN mixed with aluminum nitride powder, and additives;

[0056] Ball milling: After mixing the above raw materials, ball milling is performed for 24 hours at a rotation speed of 120 RPM at room temperature;

[0057] Degassing: Degassing is performed after ball milling, and the degassing time is 1.25h;

[0058] Casting: The casting speed and temperature settings match the boiling points of the solvents in various additives. The casting speed is 0.35m / min, the set temperature is 90°C, and the viscosity during casting is 8500cp;

[0059] Lamination: Lamination is performed after casting. The lamination temperature is 550°C, the pressure is 7mpa, and the holding time is 15min.

[0060] Debinding: Debinding after lamination, the debinding temperature is 500℃, and the maximum temperature holding time is 45min;

[0061] Sintering: After debinding, sinter in a sintering furnace. The maximum sintering temperature is 1800℃ and the maximum temperature holding time is 60min.

[0062] Resistivity test: The sintered bodies formed by the above process were ground and cut into discs with a diameter of 50 mm and a thickness of 1 mm, and then the volume resistivity test was carried out.

[0063] The embodiments of the present invention are described in detail above, but the present invention is not limited to the described embodiments. For those skilled in the art, various changes, modifications, substitutions and variations of these embodiments are made without departing from the principles and spirit of the present invention, and still fall within the protection scope of the present invention.

Claims

1. A high temperature and high volume resistivity electrostatic chuck ceramic plate, characterized in that: The electrostatic chuck ceramic plate is an aluminum nitride ceramic plate, and the electrostatic chuck ceramic plate includes the following components: aluminum nitride powder, Sm or La or Y or AIN mixed with the aluminum nitride powder, and an additive, the amount of the added Sm or La or Y or AIN is 2%wt, and the additive is any one of a solvent, a dispersant, a defoaming agent, a binder, a binder, and a leveling agent, or a mixture of two or more thereof.

2. A high temperature and high volume resistivity electrostatic chuck ceramic plate according to claim 1, characterized in that: The electrostatic chuck ceramic plate includes the following components: aluminum nitride powder, Sm powder mixed with the aluminum nitride powder, the amount of the Sm powder added is 2%wt, and the auxiliary agent is any one of a solvent, a dispersant, a defoamer, a binder, a binder, and a leveling agent.

3. A method for preparing a high-temperature and high-volume resistivity electrostatic chuck ceramic plate, characterized in that: The preparation method uses the components described in claim 1 or 2 as raw materials, and the preparation method comprises: Prepare materials for preparing the electrostatic chuck ceramic plate: aluminum nitride powder, Sm or La or Y or AIN mixed with the aluminum nitride powder, and an additive; Ball milling: After mixing the above raw materials, ball milling is performed for 19 to 29 hours at a rotation speed of 60 to 180 RPM at room temperature; Degassing: Degassing is performed after ball milling, and the degassing time is 0.5 to 2 hours; Casting: Casting speed and temperature settings match the boiling point of the solvent in various additives. The casting speed is 0.1m / min~0.55m / min, the setting temperature is 50℃~120℃, and the viscosity during casting is 5000cp~12000cp; Lamination: Lamination is carried out after casting, the lamination temperature is 40℃~70℃, the pressure is 5~10mpa, and the holding time is 10~20min; Debinding: Debinding after lamination, the debinding temperature is 400-600℃, and the maximum temperature holding time is 30-60min; Sintering: After debinding, sinter in a sintering furnace. The maximum sintering temperature is 1800℃ and the maximum temperature holding time is 60min. Resistivity test: The sintered bodies formed by the above process were ground and cut into discs with a diameter of 50 mm and a thickness of 1 mm, and then the volume resistivity test was carried out.

4. The method for preparing a high-temperature and high-volume resistivity electrostatic chuck ceramic plate according to claim 3, characterized in that: In the resistivity test step, when the wafer is subjected to volume resistivity test, the volume resistivity test is performed at 150° C., 300° C., 450° C., 600° C. and room temperature.

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