Voltage control method of semiconductor equipment

Abstract

The invention provides a voltage control method of semiconductor equipment. The method comprises the following steps: S1, providing the semiconductor equipment; s2, the control device judges whether the preset process pressure exceeds a pressure threshold value or not; if yes, the action of switching the pressure regulating working mode from the pump independent pressure regulating mode to the pump valve mixed pressure regulating mode is executed, and the step S3 is executed; if not, executing a pressure regulating working mode and continuing to adopt the independent pressure regulating mode action of the pump; s3, the pressure control valve controls the pressure of the cavity in real time, the control device judges whether the pressure increasing rate is normal or not, and if yes, the pressure control valve continues to control the pressure of the cavity in real time; and if not, the action of adding an angle control valve to adjust the cavity pressure is executed. Through pressure control of the pump and the valve, the pressure adjusting range is larger, and the pressure adjusting device is suitable for wide semiconductor technologies and particularly suitable for small-flow wafer machining technologies.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to the technical field of a voltage control method for semiconductor equipment. Background Art

[0002] In the process of semiconductor chip processing, semiconductor processing equipment is required, such as etching equipment, photolithography equipment, and thin film equipment.

[0003] Semiconductor equipment is mainly used for processing wafers, such as thin film deposition, etching, ion implantation and other processing techniques. When processing wafers, it is necessary to control the pressure, temperature and flow field of the cavity in the semiconductor equipment to meet the process parameters. Among them, the pressure of the cavity is an important process parameter. Different processes have different pressure requirements, but the existing pressure control uses pumps and valves to control the cavity pressure. For example, a fixed-frequency pump is used to pump air, and the valve plate opening of the control valve is used to adjust the pressure change in the cavity. However, since the pump is fixed-frequency, only the opening of the valve plate is used to adjust the pressure. When high pressure is required, it is difficult to increase the pressure. In addition, some existing technologies use variable-frequency pumps to adjust the pressure in the cavity, but because the pump itself has the characteristic of slow response speed, the response to pressure changes is slow, which is difficult to adapt to the requirements of the process. Summary of the invention

[0004] The purpose of the present invention is to provide a pressure control method, especially to solve the problem that it is difficult to achieve high pressure under small flow conditions and the problem that the pressure regulation speed is slow.

[0005] In order to achieve the above objectives, the present invention is implemented by the following technical solutions:

[0006] The present invention provides a voltage control method for semiconductor equipment, the steps comprising:

[0007] S1. Provide a semiconductor device, wherein the semiconductor device comprises a pressure control valve, an angle control valve and a pump connected in sequence to the exhaust port of the cavity, wherein the pump is provided with a frequency converter; the cavity is provided with a control device and a pressure detection device, wherein the pressure detection device is used to measure the pressure of the cavity; the control device is respectively connected to the pressure control valve, the angle control valve, the pump and the pressure detection device, and is used to control the pressure control valve, the angle control valve and the pump according to changes in pressure;

[0008] S2, the control device determines whether the preset process pressure exceeds the pressure threshold; if yes, the pressure regulation working mode is switched from the pump-only pressure regulation mode to the pump-valve mixed pressure regulation mode, and the process jumps to step S3; if no, the pressure regulation working mode continues to adopt the pump-only pressure regulation mode;

[0009] S3, the pressure control valve controls the cavity pressure in real time, and the control device determines whether the pressure increase rate is normal. If so, the pressure control valve continues to control the cavity pressure in real time; if not, the pressure control angle valve is added to adjust the cavity pressure.

[0010] Optionally, in step S1, the semiconductor device further includes a process gas source and a mass flow meter, and the process gas source and the mass flow meter are sequentially connected to the gas inlet of the cavity.

[0011] Optionally, in step S2, the pressure threshold range is 110-650 Torr.

[0012] Optionally, in step S3, the determining whether the boost rate is normal is: determining whether the boost rate exceeds a boost rate threshold, if yes, it is normal; if no, it is abnormal.

[0013] Optionally, in step S3, adding an angle control valve to adjust the cavity pressure includes: reducing the opening of the angle control valve.

[0014] Optionally, in step S3, adding an angle-controlled valve to adjust the chamber pressure also includes: determining whether the process gas flow in the chamber is less than or equal to a small flow threshold, and if so, continuing to reduce an opening increment on the basis of reducing the opening of the angle-controlled valve.

[0015] Optionally, in step S3, the pressure control valve controls the cavity pressure in real time through a PID algorithm.

[0016] Optionally, the low flow threshold ranges from 8 to 15 SLM.

[0017] Optionally, the operating frequency of the pump is 15HZ-50HZ.

[0018] Compared with the prior art, the present invention has the following advantages:

[0019] 1. The pressure control method of the present invention can achieve rapid pressure increase by controlling the pressure through the pressure control valve 170, the angle control valve 190 and the variable frequency pump.

[0020] 2. The method of the present invention can be used in the case of small flow rates. When the flow rate is small, the pressure control is still stable and fast, and high pressure control can be guaranteed at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0022] Figure 1 It is a schematic structural diagram of the semiconductor device of the present invention. DETAILED DESCRIPTION

[0023] The scheme proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the accompanying drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0024] Figure 1 A schematic structural diagram of the semiconductor device of the present invention is shown, wherein the semiconductor device comprises a pressure control valve 170, an angle control valve 190 and a pump 120 which are sequentially connected to the exhaust port of a cavity 150, and the pump is provided with a frequency converter 121; the cavity 150 is provided with a control device and a pressure detection device, and the pressure detection device is used to measure the pressure of the cavity; the control device is respectively connected to the pressure control valve 170, the angle control valve 190, the pump 120 and the pressure detection device, and is used to control the pressure control valve, the angle control valve and the pump according to changes in pressure.

[0025] The pressure control valve 170 is controlled by a PID algorithm. The angle control valve 160 has only a fixed opening, such as 0%, 30%, 50%, 100%, etc. The frequency converter 121 is used to control the power change of the pump 120 , thereby adjusting the pressure in the cavity 150 .

[0026] Optionally, the semiconductor device further includes a process gas source 110, a mass flow meter 130, a first valve 141, a second valve 142, a third valve 161 and a fourth valve 162, wherein the process gas source 110 and the mass flow meter 130 are sequentially connected to the gas inlet of the chamber 150; the first valve 141 and the second valve 142 are respectively arranged upstream and downstream of the mass flow meter 130, that is, the first valve 141 is arranged between the process gas source 110 and the mass flow meter 130, and the second valve 142 is arranged between the mass flow meter 130 and the gas inlet. The third valve 161 is arranged between the exhaust port and the pressure control valve 170; the fourth valve 162 is arranged between the angle control valve 190 and the pump 120. The mass flow meter 130 is used to control the flow rate of the process gas entering the chamber from the process gas source 110. The present invention controls the pressure together by setting a pressure control valve 170, an angle control valve 190 and a variable frequency pump, wherein the variable frequency pump can autonomously adjust the pressure in the cavity. The pressure control valve 170 and the angle control valve 190 cooperate with the pump to compensate for the disadvantage of slow pressure control speed of the pump.

[0027] Optionally, the first valve 141 , the second valve 142 , the third valve 161 and the fourth valve 162 are PV valves for shutoff.

[0028] The present invention also provides a voltage control method, in particular a method for controlling voltage boost, comprising:

[0029] S1. Provide semiconductor equipment;

[0030] The semiconductor device is Figure 1 The semiconductor device shown.

[0031] S2. The control device determines whether the preset process pressure exceeds the pressure threshold; if so, the pressure regulation working mode is switched from the pump-only pressure regulation mode to the pump-valve mixed pressure regulation mode, and jumps to step S3; if not, the pressure regulation working mode continues to adopt the pump-only pressure regulation mode.

[0032] Optionally, in step S2, the pressure threshold range is 110-650Torr. Since the pump control pressure is easy to control at low pressure, but as the pressure increases, the pump increases the pressure by reducing the speed, but the speed is too low to cause unstable pressure control. Therefore, when the pressure threshold is exceeded, the pump-valve mixed pressure regulation mode is more conducive to the stable increase of pressure and to make the pressure rise higher. Optionally, the operating frequency of the pump is 15HZ-50HZ to make the pressure increase more stable.

[0033] S3, the pressure control valve controls the cavity pressure in real time, and the control device determines whether the pressure increase rate is normal. If so, the pressure control valve continues to control the cavity pressure in real time; if not, the pressure control angle valve is added to adjust the cavity pressure.

[0034] Optionally, in step S3, judging whether the boost rate is normal is: judging whether the boost rate exceeds a boost rate threshold, if yes, it is normal; if no, it is abnormal. In step S3, adding an angle control valve to adjust the cavity pressure is: reducing the opening of the angle control valve.

[0035] Since the pressure control valve 170 uses a PID algorithm to control the pressure, the algorithm has limitations and sometimes it is difficult to raise the pressure. Therefore, the angle control valve 190 can make up for this shortcoming. At the same time, its response speed is fast and the pressure can be raised quickly to meet the requirements of process parameters.

[0036] Optionally, in step S3, adding an angle control valve to adjust the cavity pressure also includes: determining whether the process gas flow in the cavity is less than or equal to a small flow threshold, and if so, continuing to reduce an opening increment on the basis of reducing the opening of the angle control valve. Optionally, the range of the small flow threshold is 8-15SLM. At low flow rates, pressure control becomes more difficult, especially at low flow rates, it is more difficult to increase the pressure. This problem can be solved by combining pressure control valve 170 and angle control valve 190 to achieve a maximum pressure control of 700Torr.

[0037] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements. In addition, the term "connection" herein means that A and B are directly connected, or that A and B are indirectly connected, such as A and B are connected through C, or even through more components such as C and D, and A and B can be connected in one piece, or in separate pieces, or removable, or fixed. The term "optional" herein means that the technical feature can be combined or not combined with any feature in the text.

[0038] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A voltage control method for a semiconductor device, characterized in that the steps include: S1. Provide a semiconductor device, wherein the semiconductor device comprises a pressure control valve, an angle control valve and a pump connected in sequence to the exhaust port of the cavity, wherein the pump is provided with a frequency converter; the cavity is provided with a control device and a pressure detection device, wherein the pressure detection device is used to measure the pressure of the cavity; the control device is respectively connected to the pressure control valve, the angle control valve, the pump and the pressure detection device, and is used to control the pressure control valve, the angle control valve and the pump according to changes in pressure; S2, the control device determines whether the preset process pressure exceeds the pressure threshold; If yes, the pressure regulating working mode is switched from the pump-only pressure regulating mode to the pump-valve mixed pressure regulating mode, and the process jumps to step S3; if no, the pressure regulating working mode continues to adopt the pump-only pressure regulating mode; S3, the pressure control valve controls the cavity pressure in real time, and the control device determines whether the pressure increase rate is normal. If so, the pressure control valve continues to control the cavity pressure in real time; if not, the pressure control angle valve is added to adjust the cavity pressure.

2. The voltage control method of a semiconductor device according to claim 1, wherein: In the step S1, the semiconductor device further includes a process gas source and a mass flow meter, and the process gas source and the mass flow meter are sequentially connected to the gas inlet of the chamber.

3. The voltage control method of a semiconductor device according to claim 2, characterized in that: In the step S2, the pressure threshold range is 110-650 Torr.

4. The voltage control method of a semiconductor device according to claim 1, wherein: In step S3, the determination of whether the boost rate is normal is as follows: determining whether the boost rate exceeds a boost rate threshold; if so, it is normal; if not, it is abnormal.

5. The voltage control method of a semiconductor device according to claim 4, characterized in that: In the step S3, the adding of the angle control valve to adjust the cavity pressure is: reducing the opening of the angle control valve.

6. The voltage control method of a semiconductor device according to claim 5, characterized in that: In step S3, adding the angle control valve to adjust the chamber pressure also includes: judging whether the process gas flow in the chamber is less than or equal to a small flow threshold, and if so, continuing to reduce an opening increment on the basis of reducing the opening of the angle control valve.

7. The voltage control method of a semiconductor device according to claim 6, characterized in that: In step S3, the pressure control valve controls the cavity pressure in real time through a PID algorithm.

8. The voltage control method of a semiconductor device according to claim 6, wherein: The range of the low flow threshold is 8-15 SLM.

9. The voltage control method of a semiconductor device according to claim 1, wherein: The operating frequency of the pump is 15HZ-50HZ.

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