Pulse high-voltage silicon stack manufacturing method

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a pulse high-voltage silicon stack manufacturing method, which comprises the following steps of: analyzing the change trend of simulation results of various to-be-optimized targets under any type of to-be-optimized circuit parameters under the current iteration and all previous iterations; determining a comprehensive simulation change coefficient under the current iteration; the distance between the position updating coordinates of each rime particle under each iteration and the adjacent previous iteration is analyzed, the change trend of the position variation under the current iteration and all previous iterations is evaluated, the position change degree of each rime particle under the current iteration is determined, and the position of each rime particle under the current iteration is calculated in combination with the comprehensive simulation change coefficient. And optimizing the to-be-optimized parameters of the pulse high-voltage silicon stack. According to the method, the adhesion degree of the rime particles is dynamically adjusted, so that the precision of convergence of the rime particles to a pareto optimal solution and the performance of a pulse high-voltage silicon stack product are improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method for manufacturing a pulsed high-voltage silicon stack. Background Art

[0002] The pulsed high-voltage silicon stack is a new type of special semiconductor device, usually composed of multiple silicon pulsed high-voltage diode cores packaged in series and parallel, with an operating voltage between tens of thousands of volts and hundreds of thousands of volts, and a pulse current between thousands of amperes and hundreds of thousands of amperes. It is often used in the field of electromagnetic catapults in large-scale scientific research experimental equipment related to nuclear physics, synchrotron radiation light sources or other large pulse power modulators for pulse isolation, reverse suppression protection or modulation waveforms. In the manufacturing process of the pulsed high-voltage silicon stack, in order to reduce production costs, simulation software is usually used to simulate and analyze the circuit parameters of the pulsed high-voltage silicon stack, and based on the simulation results, the circuit parameters of the pulsed high-voltage silicon stack are optimized using a multi-objective optimization algorithm to improve the performance of the pulsed high-voltage silicon stack, such as improving the uniformity of voltage distribution and voltage utilization in the pulsed high-voltage silicon stack.

[0003] The Multi-objective rime optimization algorithm (MORIME) is a multi-objective extension of the rime optimization algorithm (RIME). It is a new type of heuristic optimization algorithm. On the classic IEEECEC2022 test set, the RIME algorithm has superior performance compared to some intelligent optimization algorithms. However, when solving complex multi-objective optimization problems, such as circuit parameter optimization problems with highly nonlinear and complex interactions such as pulsed high-voltage silicon stacks, the growth environment or attached object model of rime in the MORIME algorithm will change. Therefore, it is necessary to modify the parameters in the MORIME algorithm to avoid falling into the local optimal solution when directly using the MORIME algorithm to optimize the circuit parameters of the pulsed high-voltage silicon stack, which will affect the selection of the best circuit parameters in the pulsed high-voltage silicon stack, thereby reducing the performance of the pulsed high-voltage silicon stack product. Summary of the invention

[0004] In order to solve the above technical problems, the present application provides a method for manufacturing a pulsed high voltage silicon stack to solve the existing problems.

[0005] A pulsed high-voltage silicon stack manufacturing method of the present application adopts the following technical solution: An embodiment of the present application provides a method for manufacturing a pulsed high voltage silicon stack, the method comprising the following steps: Obtain various circuit parameters and targets to be optimized of the pulsed high-voltage silicon stack, and use the multi-objective rime algorithm to iteratively optimize the various circuit parameters to be optimized. The specific process is as follows: S1: For the current iteration and all previous iterations, obtain the simulation results of various targets to be optimized of the pulsed high-voltage silicon stack under different circuit parameters to be optimized in each iteration, and update the coordinates of the positions of each rime particle at the end of each iteration; S2: By analyzing the change trend of the simulation results of various targets to be optimized under any type of circuit parameters to be optimized in the current iteration and all previous iterations, the simulation change values ​​of various targets to be optimized in the pulse high-voltage silicon stack under any type of parameters to be optimized in the current iteration are determined, and based on the average distribution of the simulation change values ​​of various targets to be optimized under all types of parameters to be optimized, the simulation change coefficients of various targets to be optimized in the current iteration are determined to determine the comprehensive simulation change coefficient in the current iteration; S3: determining the position change of each rime particle in each iteration by analyzing the distance between the position update coordinates of each rime particle in each iteration and the previous iteration; evaluating the change trend of the position change in the current iteration and all previous iterations, determining the position change trend value of each rime particle in the current iteration, and determining the position change degree of each rime particle in the current iteration in combination with the position change in the current iteration; S4: Based on the comprehensive simulation variation coefficient and the position variation degree, determining the adhesion adjustment value of each rime particle in the current iteration, so as to optimize the parameters to be optimized of the pulsed high-voltage silicon stack.

[0006] Preferably, the various types of circuit parameters to be optimized and various types of targets to be optimized of the pulse high-voltage silicon stack are obtained, including: all types of circuit parameters to be optimized include at least the reverse internal resistance, the silicon rectifier tube to ground capacitance, the distributed capacitance to the high-voltage end, the number of series tubes and the PN junction reverse barrier capacitance; all types of targets to be optimized include at least the voltage uniformity coefficient, the voltage utilization rate and the reverse withstand voltage value.

[0007] Preferably, the method for determining the simulation change value of each type of target to be optimized in the pulsed high voltage silicon stack under any type of parameter to be optimized in the current iteration is: For the current iteration and all previous iterations, the simulation results of various types of targets to be optimized under any type of circuit parameters to be optimized are fitted to obtain a fitting straight line, and the slope of the fitting straight line is used as the simulation change value of various types of targets to be optimized in the pulse high-voltage silicon stack under any type of circuit parameters to be optimized in the current iteration.

[0008] Preferably, the simulation variation coefficient of each type of target to be optimized in the current iteration is the average of the simulation variation coefficients of each type of target to be optimized in the pulse high voltage silicon stack under all types of circuit parameters to be optimized in the current iteration.

[0009] Preferably, the expression of the comprehensive simulation variation coefficient under the current iteration is: ; In the formula, Indicates the comprehensive simulation change coefficient under the current iteration; Indicates the number of simulation variation coefficients greater than 0 among the simulation variation coefficients of all targets to be optimized in the current iteration and all previous iterations; It represents the simulation variation coefficient of the nth type of target to be optimized in the pulse high-voltage silicon stack under the current iteration; N represents the total number of categories of targets to be optimized in the high-voltage silicon stack under the current iteration; exp( ) represents an exponential function with a natural constant as the base.

[0010] Preferably, the position change amount of each rime particle in each iteration is the Euclidean distance between the position update coordinates of each rime particle in each iteration and the previous iteration adjacent thereto.

[0011] Preferably, the method for determining the position change trend value of each rime particle in the current iteration is: The position change of each rime particle in the current iteration and all previous iterations is used as the ordinate for fitting, and a fitting straight line is obtained and recorded as the position fitting straight line. The slope of the position fitting straight line is used as the position change trend value of each rime particle in the current iteration.

[0012] Preferably, the expression for the degree of position change of each rime particle in the current iteration is: ; In the formula, Indicates the degree of position change of the ath rime particle in the current iteration; Indicates the position change of the ath rime particle in the current iteration; It represents the position change trend value of the ath rime particle in the current iteration; exp() represents an exponential function with a natural constant as the base.

[0013] Preferably, the expression of the adhesion adjustment value of each rime particle in the current iteration is: ; In the formula, represents the adhesion adjustment value of the ath rime particle in the current iteration; S represents the comprehensive simulation change coefficient in the current iteration; Indicates the position change degree of the ath rime particle in the current iteration; norm() represents the normalization function; Indicates a preset constant greater than 0.

[0014] Preferably, the optimizing the parameters to be optimized of the pulsed high voltage silicon stack comprises: All types of circuit parameters to be optimized in the pulse high-voltage silicon stack are used as the input of the multi-objective rime algorithm, wherein the adhesion adjustment value of each rime particle in the current iteration is used as the adhesion of the corresponding rime particle in the next iteration of the multi-objective rime algorithm until the iteration is completed, and the optimal circuit parameters of all types in the pulse high-voltage silicon stack are obtained.

[0015] This application has at least the following beneficial effects: The present application constructs a comprehensive simulation variation coefficient by analyzing the variation trends of simulation results of various targets to be optimized of the pulsed high-voltage silicon stack under different circuit parameters to be optimized, which can effectively evaluate the variation of simulation results of multiple targets to be optimized of the pulsed high-voltage silicon stack, thereby detecting and analyzing the variation trends of the objective function, judging whether the optimization process is developing in the right direction, and adjusting the optimization strategy in a timely and accurate manner to avoid the multi-objective rime algorithm from falling into a local optimal solution; further, by analyzing the variation of the position coordinates of the rime particles under different iterations, the position variation degree is constructed, which can guide the optimization algorithm to adjust the adhesion of the rime particles during the iteration process, improve the accuracy of the algorithm converging to the optimal solution, and thus improve the performance of the pulsed high-voltage silicon stack product; the present application dynamically adjusts the adhesion of the rime particles by combining the position variation degree and the comprehensive simulation variation coefficient, thereby effectively avoiding the optimization algorithm from falling into a local optimal solution, improving the accuracy of the rime particles converging to the Pareto optimal solution, and then obtaining better circuit parameters of the pulsed high-voltage silicon stack, and improving the performance of the pulsed high-voltage silicon stack product. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 A flowchart of a method for manufacturing a pulsed high voltage silicon stack provided in one embodiment of the present application; Figure 2 A schematic diagram of a process for extracting an adhesion adjustment value provided in one embodiment of the present application. DETAILED DESCRIPTION

[0018] In order to further explain the technical means and effects adopted by the present application to achieve the predetermined invention purpose, the following is a detailed description of the pulse high-voltage silicon stack manufacturing method proposed in the present application, its specific implementation method, structure, features and effects, in combination with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "another embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures or characteristics in one or more embodiments may be combined in any suitable form.

[0019] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.

[0020] The specific scheme of the pulse high-voltage silicon stack manufacturing method provided by the present application is described in detail below with reference to the accompanying drawings.

[0021] An embodiment of the present application provides a method for manufacturing a pulsed high voltage silicon stack. Specifically, the following method for manufacturing a pulsed high voltage silicon stack is provided. Figure 1 , the method comprises the following steps: S1: For the current iteration and the preset number of iterations before it, obtain the simulation results of various targets to be optimized of the pulsed high-voltage silicon stack under different circuit parameters to be optimized in each iteration, and update the position coordinates of each rime particle at the end of each iteration.

[0022] According to the equivalent circuit of the high-voltage silicon stack when it is running in reverse, the ATP software is used to build a simulation model of the pulse high-voltage silicon stack. In this embodiment, the reverse internal resistance of the silicon rectifier tube in the simulation model of the pulse high-voltage silicon stack, the capacitance of the silicon rectifier tube to ground, the distributed capacitance to the high-voltage end, the number of series tubes (the total number of silicon rectifier tubes in the simulation model) and the reverse barrier capacitance of the PN junction are used as circuit parameters to be optimized for the pulse high-voltage silicon stack; in this embodiment, the voltage uniformity coefficient, voltage utilization rate and reverse withstand voltage value of the pulse high-voltage silicon stack are used as targets to be optimized for the pulse high-voltage silicon stack.

[0023] Furthermore, a multi-objective rime algorithm is used to iteratively optimize various circuit parameters to be optimized. For the current iteration and a preset number of iterations before it, simulation results of various targets to be optimized of the pulsed high-voltage silicon stack under different circuit parameters to be optimized are obtained in each iteration, as well as the position coordinates of each rime particle are updated at the end of each iteration.

[0024] S2: By analyzing the change trend of the simulation results of various types of targets to be optimized under any type of circuit parameters to be optimized in the current iteration and all previous iterations, the simulation change values ​​of various types of targets to be optimized in the pulse high-voltage silicon stack under any type of parameters to be optimized in the current iteration are determined; based on the average distribution of the simulation change values ​​of various types of targets to be optimized under all types of parameters to be optimized, the simulation change coefficients of various types of targets to be optimized in the current iteration are determined to determine the comprehensive simulation change coefficient in the current iteration.

[0025] In the multi-objective rime algorithm, the adhesion of rime particles is used to control the distance between the centers of two rime particles, where the adhesion is a random number between 0 and 1. Different circuit parameters of the pulsed high-voltage silicon stack will have different effects on the target to be optimized of the pulsed high-voltage silicon stack. For example, increasing the reverse barrier capacitance of the PN junction will reduce the voltage uniformity coefficient, reducing the capacitance of the silicon rectifier to the ground will increase the voltage uniformity coefficient, and increasing the number of silicon rectifiers in series will increase the voltage uniformity coefficient and reduce the voltage utilization rate. When the multi-objective rime algorithm is directly used to optimize the circuit parameters of the pulsed high-voltage silicon stack, the randomness of the adhesion in the algorithm will cause the rime particles to converge too quickly to a local search space that simultaneously reduces the results of multiple targets to be optimized of the pulsed high-voltage silicon stack during its iteration process, making it difficult for the multi-objective rime algorithm to converge to the Pareto optimal frontier in a limited number of iterations, and thus unable to provide a set of optimal circuit parameters that balance all targets to be optimized of the pulsed high-voltage silicon stack.

[0026] Therefore, in the process of iteratively optimizing the optimization parameters by using the multi-objective rime algorithm, if the simulation results of multiple targets to be optimized of the pulsed high-voltage silicon stack show a large decreasing trend, it means that the rime particles may have fallen into a local search space that simultaneously reduces the results of multiple targets to be optimized of the pulsed high-voltage silicon stack, and it is difficult for the rime particles to jump out of the local search space in subsequent iterations. Therefore, this embodiment expands the search range of the rime particles by increasing the adhesion of the rime particles, so that the rime particles jump out of the local search space in subsequent iterations, so as to avoid the subsequent rime particles from converging to the local optimal solution; On the contrary, during the iteration process of the rime particles, if the simulation results of multiple targets to be optimized of the pulsed high-voltage silicon stack show a large growth trend, it means that the rime particles have entered the local search space containing the Pareto optimal solution, and may jump out of the local search space in its subsequent iterations. Therefore, this embodiment reduces the adhesion of the rime particles to narrow the search range of the rime particles, so that the rime particles iterate in the search space where the Pareto optimal solution is located, thereby improving the accuracy of the subsequent rime particles converging to the Pareto optimal solution.

[0027] Based on the above analysis, the result of multiplying all the optimization targets of the pulse high-voltage silicon stack is first used as the objective function of the multi-objective rime algorithm. This is because improving the uniformity of the distribution of the reverse voltage on the silicon rectifier tube in the pulse high-voltage silicon stack and the maximum reverse voltage value that the pulse high-voltage silicon stack can withstand, that is, improving the voltage uniformity coefficient and reverse withstand voltage value of the pulse high-voltage silicon stack, can avoid the silicon rectifier tube with the largest reverse voltage in the pulse high-voltage silicon stack from being broken down; and improving the voltage utilization rate of the pulse high-voltage silicon stack can reduce the energy loss when the pulse high-voltage silicon stack is used.

[0028] Secondly, all types of circuit parameters to be optimized in the pulsed high-voltage silicon stack are used as dimensions in the search space of the multi-objective rime algorithm, that is, each dimension represents a type of circuit parameters to be optimized, and the upper and lower limit values ​​of each type of circuit parameters to be optimized are used as the upper and lower limits of the corresponding dimensions.

[0029] Among them, in this embodiment, the initial population of rime, the maximum number of iterations and the external archive size in the multi-objective rime algorithm are set to 50, 100, and 100 respectively, the external archive size shall not be less than the size of the initial population of rime, and the control coefficient of the environmental factor in the multi-objective rime algorithm is 5. The values ​​of the initial population size of rime, the maximum number of iterations, the external archive size and the control coefficient of the environmental factor in the multi-objective rime algorithm are all artificially set, and their values ​​are not specially restricted in this embodiment. The implementer can also set them by himself according to the specific situation, and this embodiment does not impose special restrictions.

[0030] Furthermore, for the current iteration and all previous iterations, the simulation results of various types of targets to be optimized under any type of circuit parameters to be optimized are fitted to obtain a fitting straight line, and the slope of the fitting straight line is used as the simulation change value of various types of targets to be optimized in the pulsed high-voltage silicon stack under any type of circuit parameters to be optimized in the current iteration.

[0031] It should be noted that there are many commonly used fitting algorithms. In this embodiment, the least square fitting algorithm is used to fit the simulation results of various types of targets to be optimized under any type of circuit parameters to be optimized in the current iteration and all previous iterations to obtain a fitting straight line. The implementer may also use other fitting methods such as linear regression. This embodiment does not impose any special restrictions on the selection of the fitting method. Among them, all the contents related to fitting in this embodiment use the least square fitting algorithm. The least square fitting algorithm is a well-known technology, and its specific fitting principle process will not be repeated.

[0032] Furthermore, the average of the simulation variation coefficients of various types of targets to be optimized in the pulse high-voltage silicon stack under all types of circuit parameters to be optimized in the current iteration is used as the simulation variation coefficient of various types of targets to be optimized in the current iteration.

[0033] Comprehensive simulation variation coefficient under the current iteration The expression is: ; In the formula, Indicates the number of simulation variation coefficients greater than 0 among the simulation variation coefficients of all targets to be optimized in the current iteration and all previous iterations; It represents the simulation variation coefficient of the nth type of target to be optimized in the pulse high-voltage silicon stack under the current iteration; N represents the total number of categories of targets to be optimized in the high-voltage silicon stack under the current iteration; exp( ) represents an exponential function with a natural constant as the base.

[0034] According to the comprehensive simulation variation coefficient under the current iteration, it can be understood that in the current iteration and all previous iterations, if the number of simulation variation coefficients of all targets to be optimized under the current iteration and all previous iterations is greater than 0, that is, the number of targets to be optimized showing a growth trend in the simulation results of the targets to be optimized of the pulsed high-voltage silicon stack is greater, and the larger the simulation variation coefficients of various targets to be optimized in the pulsed high-voltage silicon stack under the current iteration, that is, the greater the degree to which the simulation results of the targets to be optimized show a growth trend as a whole, then the larger the comprehensive simulation variation coefficient is, indicating that the simulation results of multiple targets to be optimized of the pulsed high-voltage silicon stack show a greater growth trend in the current iteration; On the contrary, if the number of simulation variation coefficients of all targets to be optimized in the current iteration and all previous iterations whose simulation variation coefficients are greater than 0 is smaller, that is, the number of targets to be optimized showing an increasing trend in the simulation results of the targets to be optimized of the pulsed high-voltage silicon stack is smaller, and the simulation variation coefficients of various targets to be optimized in the pulsed high-voltage silicon stack in the current iteration are smaller, that is, the degree to which the simulation results of the targets to be optimized show an overall growth trend is smaller, then the comprehensive simulation variation coefficient is smaller.

[0035] S3: Determine the position change of each rime particle in each iteration by analyzing the distance between the position update coordinates of each rime particle in each iteration and the previous iteration; evaluate the changing trend of the position change in the current iteration and all previous iterations, determine the position change trend value of each rime particle in the current iteration, and determine the degree of position change of each rime particle in the current iteration in combination with the position change in the current iteration.

[0036] In the process of iterative optimization of the optimization parameters using the multi-objective rime algorithm, if the position of the rime particles does not change significantly during the iteration, it means that the rime particles may have fallen into a local search space of multiple target results to be optimized that simultaneously reduce the pulse high-voltage silicon stack, and it is difficult for the rime particles to jump out of the local search space in subsequent iterations; on the contrary, in the iterative process of the rime particles, if the position of the rime particles changes significantly in its subsequent iterations, it means that the rime particles have entered the local search space containing the Pareto optimal solution, and may jump out of the local search space in subsequent iterations. Therefore, this embodiment reduces the adhesion of the rime particles to narrow the search range of the rime particles, so that the rime particles iterate in the search space where the Pareto optimal solution is located, thereby improving the accuracy of the subsequent rime particles converging to the Pareto optimal solution.

[0037] Based on the above analysis, this embodiment analyzes the position change trend of rime particles, thereby increasing or decreasing the adhesion of rime particles to narrow the search range of rime particles, so that rime particles are iterated in the search space where the Pareto optimal solution is located, so as to improve the accuracy of subsequent rime particles converging to the Pareto optimal solution, specifically: The Euclidean distance between the updated coordinates of each rime particle in each iteration and the previous iteration is used as the position change of each rime particle in each iteration; it is used to characterize the change between the position of the rime particle at the end of each iteration and the position at the end of the previous iteration.

[0038] The calculation method of the Euclidean distance is a well-known technology, and its specific calculation process will not be repeated here.

[0039] In particular, a method for determining the position change amount of the first iteration is: taking the Euclidean distance between the position coordinates of the position update coordinates of the rime particles in the first iteration and the initial position coordinates of the rime particles as the position change amount of the rime particles in the first iteration, wherein the initial position coordinates of the rime particles can be obtained through a multi-objective rime algorithm.

[0040] Furthermore, the position change of each rime particle in the current iteration and all previous iterations is used as the ordinate for fitting, and a fitting straight line is obtained and recorded as the position fitting straight line. The slope of the position fitting straight line is used as the position change trend value of each rime particle in the current iteration.

[0041] The degree of position change of the ath rime particle in the current iteration The expression is: ; In the formula, Indicates the position change of the ath rime particle in the current iteration; It represents the position change trend value of the ath rime particle in the current iteration; exp() represents an exponential function with a natural constant as the base.

[0042] According to the position change degree of each rime particle in the current iteration, it can be understood that if the current position change of the rime particle is larger and the position change trend value is larger, the obtained position change degree of the rime particle is larger, indicating that the position of the rime particle has changed significantly compared with the previous iteration, and it is more necessary to reduce the adhesion of the rime particle to narrow the search range of the rime particle; conversely, if the current position change of the rime particle is smaller and the position change trend value is smaller, the obtained position change degree of the rime particle is smaller, indicating that the position of the rime particle has not changed significantly compared with the previous iteration, and it is more necessary to increase the adhesion of the rime particle to increase the search range of the rime particle.

[0043] S4: Based on the comprehensive simulation variation coefficient and the position variation degree, determining the adhesion adjustment value of each rime particle in the current iteration, so as to optimize the parameters to be optimized of the pulsed high-voltage silicon stack.

[0044] In the process of iteratively optimizing the optimization parameters by using the multi-objective rime algorithm, if the simulation results of multiple targets to be optimized of the pulsed high-voltage silicon stack show a large decreasing trend, and the position of the rime particles does not show a large change in its subsequent iterations, it means that the rime particles may have fallen into a local search space that simultaneously reduces the results of multiple targets to be optimized of the pulsed high-voltage silicon stack, and it is difficult for the rime particles to jump out of the local search space in subsequent iterations. Therefore, this embodiment expands the search range of the rime particles by increasing the adhesion of the rime particles, so that the rime particles jump out of the local search space in subsequent iterations, so as to avoid the subsequent rime particles from converging to the local optimal solution; On the contrary, during the iteration process of the rime particles, if the simulation results of multiple targets to be optimized of the pulsed high-voltage silicon stack show a large growth trend, and the position of the rime particles changes significantly in its subsequent iterations, it means that the rime particles have entered the local search space containing the Pareto optimal solution and may jump out of the local search space in its subsequent iterations. Therefore, this embodiment reduces the adhesion of the rime particles to narrow the search range of the rime particles, so that the rime particles iterate in the search space where the Pareto optimal solution is located, thereby improving the accuracy of the subsequent rime particles converging to the Pareto optimal solution.

[0045] Therefore, based on the comprehensive simulation variation coefficient and the position variation degree, the adhesion adjustment value of each rime particle in the current iteration is determined, specifically: The expression of the adhesion adjustment value of each rime particle in the current iteration is: ; In the formula, represents the adhesion adjustment value of the ath rime particle in the current iteration; S represents the comprehensive simulation change coefficient in the current iteration; represents the position change degree of the ath rime particle in the current iteration; norm() represents the normalization function, which is used to convert The value of is mapped to (0, 1), because the value range of adhesion in the multi-objective rime algorithm is (0, 1); Indicates a constant greater than 0 to prevent the denominator from being 0. The value of is artificially set. The value of is 0.01, and the implementer can also set it according to the specific situation. This embodiment does not impose any special limitation.

[0046] According to the adhesion adjustment value of each rime particle in the current iteration, it can be understood that if the adhesion adjustment value of the rime particle in the current iteration is larger and the comprehensive simulation variation coefficient is larger, it means that the rime particle has entered the local search space containing the Pareto optimal solution and may jump out of the local search space in its subsequent iteration. Therefore, this embodiment reduces the adhesion of the rime particles to narrow the search range of the rime particles, so the obtained adhesion adjustment value is smaller; conversely, if the adhesion adjustment value of the rime particles in the current iteration is smaller and the comprehensive simulation variation coefficient is smaller, the rime particles may have fallen into a local search space of multiple optimization target results of simultaneously reducing the pulse high-voltage silicon stack, and it is difficult for the rime particles to jump out of the local search space in subsequent iterations. The search range of the rime particles is expanded by increasing the adhesion of the rime particles, so the obtained adhesion adjustment value is larger.

[0047] Preferably, the schematic diagram of the adhesion adjustment value extraction process provided in this embodiment is as follows: Figure 2 shown.

[0048] Furthermore, all types of circuit parameters to be optimized in the pulsed high-voltage silicon stack are used as inputs to the multi-objective rime algorithm, wherein the adhesion adjustment value of each rime particle in the current iteration is used as the adhesion of the corresponding rime particle in the next iteration of the multi-objective rime algorithm until the iteration is completed, thereby obtaining the optimal circuit parameters of all types in the pulsed high-voltage silicon stack.

[0049] The staff selects the optimal circuit parameter combination that complies with the national standard GB / T6351-1998 Semiconductor Devices Discrete Devices Part 2: Rectifier Diodes Part 1 100A or less ambient or case rated rectifier diodes (including avalanche rectifier diodes) blank detailed specifications from all types of optimal circuit parameters to carry out subsequent pulse high-voltage silicon stack manufacturing.

[0050] It should be noted that the above sequence of the embodiments of the present application is for description only and does not represent the advantages and disadvantages of the embodiments. The above is a description of a specific embodiment of this specification. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or continuous order shown to achieve the desired results. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0051] The various embodiments in this specification are described in a progressive manner, and the same or similar parts between the various embodiments can be referenced to each other, and each embodiment focuses on the differences from other embodiments.

[0052] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Modifications to the technical solutions recorded in the aforementioned embodiments, or equivalent replacement of some of the technical features therein, do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A method for manufacturing a pulsed high voltage silicon stack, characterized in that: The method comprises the following steps: Obtain various circuit parameters and targets to be optimized of the pulsed high-voltage silicon stack, and use the multi-objective rime algorithm to iteratively optimize the various circuit parameters to be optimized. The specific process is as follows: S1: For the current iteration and all previous iterations, obtain the simulation results of various targets to be optimized of the pulsed high-voltage silicon stack under different circuit parameters to be optimized in each iteration, and update the coordinates of the positions of each rime particle at the end of each iteration; S2: By analyzing the change trend of the simulation results of various targets to be optimized under any type of circuit parameters to be optimized in the current iteration and all previous iterations, the simulation change values ​​of various targets to be optimized in the pulse high-voltage silicon stack under any type of parameters to be optimized in the current iteration are determined, and based on the average distribution of the simulation change values ​​of various targets to be optimized under all types of parameters to be optimized, the simulation change coefficients of various targets to be optimized in the current iteration are determined to determine the comprehensive simulation change coefficient in the current iteration; S3: determining the position change of each rime particle in each iteration by analyzing the distance between the position update coordinates of each rime particle in each iteration and the previous iteration; evaluating the change trend of the position change in the current iteration and all previous iterations, determining the position change trend value of each rime particle in the current iteration, and determining the position change degree of each rime particle in the current iteration in combination with the position change in the current iteration; S4: Based on the comprehensive simulation variation coefficient and the position variation degree, determining the adhesion adjustment value of each rime particle in the current iteration, so as to optimize the parameters to be optimized of the pulsed high-voltage silicon stack.

2. A method for manufacturing a pulsed high voltage silicon stack as claimed in claim 1, characterized in that: The various types of circuit parameters to be optimized and various types of targets to be optimized of the pulse high-voltage silicon stack are obtained, including: all types of circuit parameters to be optimized include at least the reverse internal resistance, the silicon rectifier tube to ground capacitance, the distributed capacitance to the high-voltage end, the number of series tubes and the PN junction reverse barrier capacitance; all types of targets to be optimized include at least the voltage uniformity coefficient, the voltage utilization rate and the reverse withstand voltage value.

3. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The method for determining the simulation change value of each type of target to be optimized in the pulsed high voltage silicon stack under any type of parameter to be optimized in the current iteration is: For the current iteration and all previous iterations, the simulation results of various types of targets to be optimized under any type of circuit parameters to be optimized are fitted to obtain a fitting straight line, and the slope of the fitting straight line is used as the simulation change value of various types of targets to be optimized in the pulse high-voltage silicon stack under any type of circuit parameters to be optimized in the current iteration.

4. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The simulation variation coefficients of various types of targets to be optimized in the current iteration are the average values ​​of the simulation variation coefficients of various types of targets to be optimized in the pulse high-voltage silicon stack under all types of circuit parameters to be optimized in the current iteration.

5. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The expression of the comprehensive simulation variation coefficient under the current iteration is: ; In the formula, Indicates the comprehensive simulation change coefficient under the current iteration; Indicates the number of simulation variation coefficients greater than 0 among the simulation variation coefficients of all targets to be optimized in the current iteration and all previous iterations; It represents the simulation variation coefficient of the nth type of target to be optimized in the pulse high-voltage silicon stack under the current iteration; N represents the total number of categories of targets to be optimized in the high-voltage silicon stack under the current iteration; exp( ) represents an exponential function with a natural constant as the base.

6. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The position change amount of each rime particle in each iteration is the Euclidean distance between the position update coordinates of each rime particle in each iteration and the previous iteration.

7. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The method for determining the position change trend value of each rime particle in the current iteration is: The position change of each rime particle in the current iteration and all previous iterations is used as the ordinate for fitting, and a fitting straight line is obtained and recorded as the position fitting straight line. The slope of the position fitting straight line is used as the position change trend value of each rime particle in the current iteration.

8. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The expression for the position change degree of each rime particle in the current iteration is: ; In the formula, Indicates the degree of position change of the ath rime particle in the current iteration; Indicates the position change of the ath rime particle in the current iteration; It represents the position change trend value of the ath rime particle in the current iteration; exp() represents an exponential function with a natural constant as the base.

9. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The expression of the adhesion adjustment value of each rime particle in the current iteration is: ; In the formula, represents the adhesion adjustment value of the ath rime particle in the current iteration; S represents the comprehensive simulation change coefficient in the current iteration; Indicates the position change degree of the ath rime particle in the current iteration; norm() represents the normalization function; Indicates a preset constant greater than 0.

10. The method for manufacturing a pulsed high voltage silicon stack according to claim 1, characterized in that: The optimizing the parameters to be optimized of the pulsed high voltage silicon stack comprises: All types of circuit parameters to be optimized in the pulse high-voltage silicon stack are used as the input of the multi-objective rime algorithm, wherein the adhesion adjustment value of each rime particle in the current iteration is used as the adhesion of the corresponding rime particle in the next iteration of the multi-objective rime algorithm until the iteration is completed, and the optimal circuit parameters of all types in the pulse high-voltage silicon stack are obtained.

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