Cleaning method for preventing PI damage

Abstract

The invention belongs to the technical field of wafer cleaning, and particularly relates to a cleaning method for preventing PI damage, which comprises the following steps of: 1, replacing a cleaning spray head, and replacing a columnar high-pressure spray nozzle with a fan-shaped high-pressure spray nozzle; 2, placing a wafer for cleaning, and placing the wafer below a fan-shaped high-pressure nozzle for washing; and step 3, taking out the wafer, inspecting, cleaning the wafer which does not meet the requirement again until the requirement is met, changing the high-pressure cleaning nozzle from a conventional columnar shape into a fan shape, weakening the impact force on the unit area of the PI surface on the premise of not influencing the cleaning effect, achieving the purpose of not damaging the PI, changing the nozzle from the columnar shape into the fan shape, and improving the cleaning efficiency. The cleaning efficiency can be improved, and the cleaning process time is saved.

Description

Technical Field

[0001] The invention relates to the technical field of wafer cleaning, in particular to a cleaning method for preventing PI from being damaged. Background Art

[0002] Usually, the water flow of a high-pressure cleaning machine (scrubber) is columnar. The multi-layer intermetallic dielectric layer PI is bombarded by plasma and then cleaned with a columnar scrubber. There will be abnormal PI damage on the surface, which will affect the subsequent PVD deposition quality and appearance.

[0003] To this end, the present application proposes a cleaning method for preventing PI damage. Summary of the invention

[0004] The purpose of this section is to summarize some aspects of the embodiments of the present invention and briefly introduce some preferred embodiments. Some simplifications or omissions may be made in this section and the specification abstract and the invention title of this application to avoid blurring the purpose of this section, the specification abstract and the invention title, and such simplifications or omissions cannot be used to limit the scope of the present invention.

[0005] In view of the above and / or existing problems in conventional wafer cleaning, the present invention is proposed.

[0006] Therefore, the purpose of the present invention is to provide a cleaning method for preventing PI from being damaged. The high-pressure cleaning nozzle is changed from a conventional columnar shape to a fan-shaped shape. Under the premise of not affecting the cleaning effect, the impact force per unit area of ​​the PI surface is weakened, thereby achieving the purpose of not damaging the PI. At the same time, the nozzle is changed from a columnar shape to a fan-shaped shape, which can improve the cleaning efficiency and save the cleaning process time.

[0007] To solve the above technical problems, according to one aspect of the present invention, the present invention provides the following technical solutions:

[0008] A cleaning method for preventing PI damage comprises the following steps:

[0009] Step 1: Replace the cleaning nozzle and replace the columnar high-pressure nozzle with a fan-shaped high-pressure nozzle;

[0010] Step 2: Place the wafer for cleaning and rinse it under the fan-shaped high-pressure nozzle;

[0011] Step 3: Take out the wafers, inspect them, and clean the wafers that do not meet the requirements again until they meet the requirements.

[0012] As a preferred embodiment of the cleaning method for preventing PI damage described in the present invention, in step 1, the water spraying angle of the fan-shaped high-pressure nozzle is 60°.

[0013] As a preferred solution of the cleaning method for preventing PI damage described in the present invention, wherein: in the step 2, the Pressure is 0-18MPa, and the process pressure is 8MPa.

[0014] As a preferred embodiment of the cleaning method for preventing PI damage described in the present invention, in the step three, the wafer cleaning surface that meets the requirements is smooth and no watermark appears on the surface after cleaning.

[0015] Compared with the prior art: the present invention changes the high-pressure cleaning nozzle from a conventional columnar shape to a fan-shaped shape, which reduces the impact force per unit area of ​​the PI surface without affecting the cleaning effect, thereby achieving the purpose of not damaging the PI. At the same time, the nozzle is changed from a columnar shape to a fan-shaped shape, which can improve the cleaning efficiency and save the cleaning process time. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the present invention will be described in detail below in combination with the accompanying drawings and detailed embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative labor. Among them:

[0017] Figure 1 It is a schematic diagram of the structure of the steps of the present invention;

[0018] Figure 2 This is a 0.2mm cylindrical high-pressure nozzle and the PVD effect after cleaning;

[0019] Figure 3 This is a picture of the fan-shaped high-pressure nozzle and the PVD effect after cleaning. DETAILED DESCRIPTION

[0020] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0021] In the following description, many specific details are set forth to facilitate a full understanding of the present invention, but the present invention may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0022] Secondly, the present invention is described in detail with reference to schematic diagrams. When describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0023] To make the objectives, technical solutions and advantages of the present invention more clear, the embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.

[0024] The present invention provides a cleaning method to prevent PI from being damaged. The high-pressure cleaning nozzle is changed from a conventional columnar shape to a fan-shaped shape. Under the premise of not affecting the cleaning effect, the impact force per unit area of ​​the PI surface is weakened, so as to achieve the purpose of not damaging the PI. At the same time, the nozzle is changed from a columnar shape to a fan-shaped shape, which can improve the cleaning efficiency and save the cleaning process time. Please refer to Figure 1-Figure 3 , comprising the following method steps:

[0025] Step 1: Replace the cleaning nozzle and replace the columnar high-pressure nozzle with a fan-shaped high-pressure nozzle;

[0026] Step 2: Place the wafer for cleaning and rinse it under the fan-shaped high-pressure nozzle;

[0027] Step 3: Take out the wafers, inspect them, and clean the wafers that do not meet the requirements again until they meet the requirements.

[0028] The water spray angle of the fan-shaped high-pressure nozzle is 60°.

[0029] Pressure 0-18MPa, process pressure 8MPa.

[0030] The wafer cleaning surface that meets the requirements is smooth and no watermark appears on the surface after cleaning.

[0031] In actual use, after the traditional cleaning method uses columnar high pressure cleaning, watermarks of the cleaning motion track will be left on the PI surface (such as Figure 2 ), which is clearly visible after metal deposition.

[0032] The present application changes the cylindrical high pressure nozzle into a 60° angle fan-shaped nozzle, such as Figure 3 , so that the pure water sprayed out is fan-shaped, and no watermark appears on the surface after cleaning, which solves the problem of watermark on the wafer surface after high-pressure cleaning, while maintaining the cleaning effect unchanged.

[0033] Although the present invention has been described above with reference to the embodiments, various modifications may be made thereto and parts thereof may be replaced by equivalents without departing from the scope of the present invention. In particular, as long as there is no structural conflict, the various features in the embodiments disclosed in the present invention may be used in combination with each other in any manner, and the fact that these combinations are not exhaustively described in this specification is only for the sake of omitting space and saving resources. Therefore, the present invention is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A cleaning method for preventing PI damage, characterized in that: The method comprises the following steps: Step 1: Replace the cleaning nozzle and replace the columnar high-pressure nozzle with a fan-shaped high-pressure nozzle; Step 2: Place the wafer for cleaning and rinse it under the fan-shaped high-pressure nozzle; Step 3: Take out the wafers, inspect them, and clean the wafers that do not meet the requirements again until they meet the requirements.

2. A cleaning method for preventing PI damage according to claim 1, characterized in that: In the step 1, the water spraying angle of the fan-shaped high-pressure nozzle is 60°.

3. A cleaning method for preventing PI damage according to claim 1, characterized in that: In the step 2, Pressure is 0-18MPa, and process pressure is 8MPa.

4. A cleaning method for preventing PI damage according to claim 1, characterized in that: In the step three, the wafer cleaning surface that meets the requirements is smooth and clean, and no watermark appears on the surface after cleaning, which is qualified.

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