Three-dimensional stacked high-power multichannel dual-polarization airtight packaging T / R assembly

Abstract

The invention relates to a three-dimensional stacked high-power multi-channel dual-polarization airtight packaging T / R assembly, which comprises a power supply modulation layer, a multifunctional processing layer and a power amplifier low-noise amplifier layer which are sequentially stacked from bottom to top, and electrical interconnection among the three circuit layers and with the outside is realized by adopting the BGA solder balls. The three circuit layers adopt LTCC (Low Temperature Co-Fired Ceramic) or HTCC (High Temperature Coefficient Chip) to realize an integrated packaging structure with a cavity; the interior of the integrated structure is divided into a plurality of same independent cavities so as to accommodate circuits and structures of the channels; a signal transmission structure and a grounding through hole array are arranged in the cavity wall of the integrated structure, so that electrical interconnection, impedance matching and electromagnetic shielding inside and outside the package are realized; each cavity is sealed in an independent airtight mode through a metal cover plate. When necessary, a wave-absorbing material is added in the cavity to prevent self-excitation of the assembly. According to the invention, the product structure and the production process are simplified, the production efficiency, the packaging efficiency and the yield are improved, and the cost is reduced; the power capacity and the reliability of the product are improved, and the maintainability is good.

Description

Technical Field

[0001] The invention relates to the field of microwave / millimeter wave transceiver components, and in particular to a three-dimensional stacked high-power multi-channel dual-polarization gas-sealed T / R component. Background Art

[0002] In recent years, microwave / millimeter wave communications and radars have developed rapidly, especially in the field of phased array radars. With the trend of radar transmission frequency, transmission power, and performance continuously improving, the T / R components, the core components with the largest installed capacity in phased array radars, have put forward higher and higher requirements on their output power, integration, and reliability.

[0003] According to the assembly method, T / R components can be divided into two structures: brick-type and tile-type. The brick-type structure usually adopts 2D-MCM technology, which has a high degree of technical maturity. In recent years, it has been widely used in phased array radars, but its integration is low, its size is large, and its weight is heavy. Tile-type T / R components have the advantages of high integration and light weight, and have gradually become a new trend in the development of T / R components. The current technical maturity is low. To realize tile-type T / R components, several bottleneck problems need to be solved: 1) Chipization or miniaturization of passive and active circuits; 2) High-density integration; 3) Miniaturized, high-performance, and highly reliable RF vertical interconnection technology; 4) Heat dissipation; 5) Electromagnetic compatibility; 6) Reliability; 7) Maintainability, etc.

[0004] In recent years, a lot of achievements have been made in circuit miniaturization, chipization, and three-dimensional high-density integration, but there are still many problems. For example, Chinese patent document CN117497532 discloses an AIP three-dimensional stacked TR airtight packaging component, and Chinese patent document CN112466864 discloses a three-dimensional stacked microwave component based on high-temperature co-fired ceramics. Both documents use different structures to achieve electromagnetic shielding and electrical interconnection respectively, resulting in insufficient component integration. Chinese patent document CN117577639 discloses a bidirectional stacked three-dimensional airtight ceramic packaging structure, and Chinese patent document CN114334865A discloses a three-dimensional stacked high-power TR airtight packaging component. These two packaging structures are too idealized, the process operability is not strong, and electromagnetic compatibility and airtightness are also difficult to ensure.

[0005] Therefore, it is necessary to realize a three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R component with strong process operability and high reliability. Summary of the invention

[0006] The purpose of the present invention is to provide a three-dimensional stacked high-power multi-channel bipolar gas-sealed T / R component, which can solve the shortcomings of the prior art and has the characteristics of strong process operability and high reliability.

[0007] To achieve the above object, the present invention adopts the following technical solutions:

[0008] A three-dimensional stacked high-power multi-channel bipolarized hermetic sealed T / R component, the T / R component comprises three functional circuit layers arranged in sequence from bottom to top: a power modulation layer, a multi-function processing layer and a power amplifier low-noise layer; BGA solder balls are used to achieve electrical interconnection between the three functional circuit layers and between the T / R component and the outside.

[0009] The power modulation layer, the multi-function processing layer and the power amplifier low noise layer are all implemented as an integrated packaging structure with a cavity using LTCC or HTCC, and the integrated packaging structure includes a shell and partition ribs arranged in the shell; the partition ribs divide the shell into a plurality of identical cavities to accommodate the circuits and structures of each channel, forming an integrated ceramic packaging structure with multiple cavities opened on a single side; a cover plate is provided at the opening of each cavity to achieve independent airtight sealing; a signal transmission structure and a grounding through hole array are provided on the cavity wall of the cavity to achieve electrical interconnection and electromagnetic shielding inside and outside the package.

[0010] As a further improvement of the above technical solution, the partition ribs are in a cross shape or a tic-tac-toe shape.

[0011] As a further improvement of the above technical solution, the signal transmission structure is used to achieve electrical interconnection and impedance matching inside and outside the package; the grounding through-hole array includes a plurality of grounding through-holes arranged in an array to form a plurality of electromagnetic shielding walls to achieve electromagnetic isolation between channels.

[0012] As a further improvement of the above technical solution, a metallized step is respectively provided on the opening end surface of each cavity of the power amplifier low-noise layer, the multi-functional processing layer and the power modulation layer for installing a sealing cover to ensure good grounding and electromagnetic shielding properties of the cover.

[0013] As a further improvement of the above technical solution, the cover plate is made of metal.

[0014] As a further improvement of the above technical solution, an absorbing material is provided on the cover plate in the cavity of the power amplifier low noise layer and the multifunctional processing layer; the absorbing material is used to improve the EMC of the T / R component and prevent the component from self-excitation.

[0015] As a further improvement of the above technical solution, the BGA solder balls are placed on the cavity wall port surfaces of the power amplifier low noise layer and the power modulation layer or on the cover plates of the power amplifier low noise layer and the multifunctional processing layer.

[0016] As a further improvement of the above technical solution, the power amplifier low noise amplifier layer and the power modulation layer are provided with input / output interfaces to electrically interconnect with the antenna and the wave control board respectively.

[0017] As a further improvement of the above technical solution, the power amplifier low noise amplifier processing layer includes a circuit T1; the circuit T1 includes an attenuator, a power amplifier, a circulator, a limiter and a low noise amplifier.

[0018] The circuit T1 is divided into a transmitting branch, a horizontal polarization receiving branch and a vertical polarization receiving branch; the transmitting branch includes a first attenuator, a power amplifier and a circulator; the horizontal polarization receiving branch includes a circulator, a first limiter, a first low noise amplifier and a second attenuator; the vertical polarization receiving branch includes a second limiter, a second low noise amplifier and a third attenuator; the transmitting branch and the horizontal polarization receiving branch share the same circulator.

[0019] The transmitting branch is used to receive the transmitting signal from the multi-functional processing layer, which is attenuated and impedance matched by the first attenuator ATT_2, amplified by the first power amplifier, and then output to the antenna through the circulator; the horizontal polarization receiving branch is used to receive the signal from the horizontal polarization antenna, which is processed by the circulator and the first limiter, and then transmitted to the low noise amplifier for amplification, and then transmitted to the multi-functional processing layer after level adjustment and impedance matching by the second attenuator; the vertical polarization receiving branch is used to receive the signal from the vertical polarization antenna, which is processed by the second limiter, and then transmitted to the second low noise amplifier for amplification, and then transmitted to the multi-functional processing layer after level adjustment and impedance matching by the third attenuator; the limiter adopts a limiter with anti-burning function to prevent the low noise amplifier from saturation and burning; the circulator is used to realize the transmit and receive isolation of the T / R component; the power amplifier is used to amplify the transmitting signal to the required power level and then output it.

[0020] The multifunctional processing layer includes a circuit T2; the circuit T2 includes a microwave switch and a multifunctional processing part for realizing amplitude and phase control; wherein the microwave switch is used to realize switching between vertical polarization and horizontal polarization channels; the multifunctional processing part is used to realize switching of the transceiver state of the T / R component. When in the transmitting state, the multifunctional processing part amplifies the microwave signal received from the outside, adjusts the amplitude and phase, and sends it to the power amplifier and low noise amplifier processing layer; when in the receiving state, the multifunctional processing part receives the microwave signal from the dual polarization switching switch, amplifies, adjusts the amplitude and phase, and sends it to the external circuit.

[0021] The power modulation layer includes a circuit T3 of a power modulation part; the circuit T3 of the power modulation part includes a power modulation chip A, a power modulation chip B and a multifunctional driver C; the power modulation chip A and the power modulation chip B are both dual-channel independent in-phase power modulation chips; the circuit T3 of the power modulation part is used to receive three control signals TRRO, TRTO and D0 provided by the multifunctional processing part; wherein the control signal TRRO and the control signal TRTO are respectively connected to the two input ports of the dual-channel independent in-phase power modulation chip A, and the power modulation chip A outputs two in-phase control signals to control the transmitting amplifier and the receiving amplifier in the multifunctional processing part. state, works when high level, and does not work when low level; the control signal TRRO is respectively connected to the two input ports of the dual-path independent in-phase power modulation chip B, wherein the first routing control signal D0 enables control, and the other routing control signal D0 is enabled after being inverted by the multi-function driver C; the two output ports of the power modulation chip B respectively enable and control the low noise amplifier of the vertical polarization and horizontal polarization channels; at the same time, the control signal D0 controls the switching of the dual polarization channel selection switch; the control signal TRTO outputs two complementary control signals through the multi-function driver C to control the conduction and cutoff of the PMOS tube, and at the same time, the multi-function driver C also outputs a negative voltage for the PA to perform gate voltage bias.

[0022] As a further improvement of the above technical solution, the circulator is a microstrip circulator; the upper half of the cross section of the microstrip circulator is trapezoidal, and the lower half is rectangular; the microstrip circulator has three ports. The microstrip circulator is miniaturized by optimizing the five-port dual-polarization circulator into a three-port device and omitting the electromagnetic shielding cover on the ferrite, and the size is 7.6×3.9×2.3mm 3 At the same time, in order to adapt to the internal structure of the integrated package, a trapezoidal structure is designed.

[0023] Compared with the prior art, the advantages of the present invention are:

[0024] The three-dimensional stacked high-power multi-channel bipolarized airtight packaged T / R component described in the present invention adopts one-time integrated molding for each layer of the integrated packaging structure, which has a simple structure and does not require an external frame; the cavity wall of each layer of the integrated packaging structure simultaneously has the functions of electromagnetic shielding, electrical interconnection and structural support, and does not require additional independent electromagnetic shielding partition walls, electrical interconnection structures and structural supports. Therefore, it simplifies the product structure and production process, improves production efficiency and packaging efficiency, and reduces costs; each layer of the package body can be independently airtightly packaged and tested independently, thereby improving the product yield. The power amplifier low-noise layer adopts high thermal conductivity ceramic materials, which is convenient for realizing low thermal resistance heat conduction between the component and the system cold plate, and can be applied to high-power occasions; the metal packaging cover plate of each layer is used to realize airtight packaging, heat conduction, and structural support, preventing BGA balls from being stressed, and improving component reliability. In addition, the present invention designs a new type of micro circulator, which not only realizes the miniaturization of the T / R component, but also ensures its power capacity and reliability. Therefore, the three-dimensional stacked high-power multi-channel dual-polarization gas-sealed T / R assembly described in the present invention has the characteristics of strong process operability, high reliability, good maintainability, and support for dual-polarization mode. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the structure of a three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly in the present invention;

[0026] Figure 2 1 is a schematic diagram of the structure of the power amplifier low noise layer in the present invention; wherein (a) is a cross-sectional diagram of the integrated packaging structure of the power amplifier low noise layer (before assembly); (b) is a cross-sectional diagram of the integrated packaging structure of the power amplifier low noise layer (after assembly); (c) is an assembly diagram of the power amplifier low noise layer; (d) is a schematic diagram of the structure of the first cover plate;

[0027] Figure 3 Schematic diagram of the structure of the multifunctional processing layer in the present invention; wherein (a) is a cross-sectional diagram of the integrated packaging structure of the multifunctional processing layer (before assembly); (b) is a cross-sectional diagram of the integrated packaging structure of the multifunctional processing layer (after assembly); (c) is an assembly diagram of the multifunctional processing layer; (d) is a schematic diagram of the structure of the second cover plate;

[0028] Figure 4 Schematic diagram of the structure of the power modulation layer in the present invention; wherein (a) is a cross-sectional diagram of the integrated packaging structure of the power modulation layer (before assembly); (b) is a cross-sectional diagram of the integrated packaging structure of the power modulation layer (after assembly); (c) is an assembly diagram of the power modulation layer; (d) is a schematic diagram of the structure of the third cover plate;

[0029] Figure 5 It is a circuit principle block diagram of the present invention;

[0030] Figure 6 is a schematic structural diagram of a circulator in the present invention;

[0031] Figure 7 It is a schematic diagram of the structure of the existing brick-type T / R assembly;

[0032] Figure 8 It is a schematic diagram of the nominal height of the chip-type T / R assembly realized by the present invention;

[0033] Fig. 9 It is a physical picture of the integrated packaging structure (cavity) of three T / R components of the present invention;

[0034] Fig.10 This is a physical picture of three single-layer products of the T / R assembly of the present invention after assembly;

[0035] Fig.11 This is a physical picture of the T / R assembly of the present invention after three-dimensional stacking;

[0036] Fig.12 This is the schematic diagram of the conventional power modulation technology solution;

[0037] Fig.13 It is a schematic diagram of the structure of a conventional dual-polarization circulator. DETAILED DESCRIPTION

[0038] The present invention will be further described below in conjunction with the accompanying drawings:

[0039] like Figure 1 A three-dimensional stacked high-power multi-channel bipolarized airtight package T / R component is shown, comprising a power modulation layer 3, a multi-functional processing layer 2 and a power amplifier low-noise layer 1 arranged in sequence from bottom to top; the power amplifier low-noise layer 1, the multi-functional processing layer 2 and the power modulation layer 3 are all independently airtight, and are electrically interconnected with each other using BGA solder balls 4.

[0040] The power amplifier and low noise amplifier processing layer 1 is used to accommodate the circuit T1 of the power amplifier 101, circulator 102, limiter 103, dual polarization low noise amplifier 104 and other parts in the T / R component. The multifunctional processing layer 2 is used to accommodate the circuit T2 of the microwave switch 201 and the multifunctional processing 202 part for realizing amplitude and phase control in the T / R component. The power modulation layer 3 is used to accommodate the circuit T3 of the power modulation part in the T / R component.

[0041] like Figure 2As shown, the power amplifier low noise layer 1 is an integrated packaging structure with a cavity realized by high temperature co-fired ceramic (HTCC). The power amplifier low noise layer 1 includes a first shell 11, and a first partition rib 10 formed integrally with the first shell is arranged inside the first shell. The first partition rib 10 is cross-shaped and is used to separate the first shell into four identical first cavities 12 to accommodate the power amplifier low noise circuit and structure T1 of each channel, forming a first integrated ceramic packaging structure with four cavities opened on one side.

[0042] Furthermore, a plurality of first signal through holes and a plurality of first grounding through holes 16 are respectively provided on the first shell 11 and the first partition rib 10. The first signal through holes are used to realize the electrical interconnection inside and outside the package of the power amplifier low noise layer 1. The first signal through holes include first RF signal through holes 14 and other first non-RF signal through holes 15. The first grounding through holes 16 are arranged in an array to form a series of electromagnetic shielding partition walls to realize electromagnetic isolation between channels. A first step 13 is provided on the open end face of the first cavity for installing a first sealing cover plate 17 to realize independent airtight sealing. The first cover plate 17 is made of metal.

[0043] Furthermore, a first BGA solder ball 411 is provided on the port surface of the first shell 11 and the first partition rib 10 of the power amplifier low noise layer 1 or the first cover plate 17 to achieve electrical interconnection and structural support inside and outside the power amplifier low noise layer 1.

[0044] Furthermore, a first absorbing material 18 is provided on the first cover plate 17 of the first cavity 12 of the power amplifier low noise layer 1 to improve the EMC of the T / R component and prevent the component from self-excitation.

[0045] like Figure 3 As shown, the multifunctional processing layer 2 is an integrated packaging structure with a cavity realized by low temperature co-fired ceramic (LTCC). The multifunctional processing layer 2 includes a second shell 21, and an integrated second partition rib 20 is arranged inside the second shell; the second partition rib 20 is cross-shaped, and is used to separate the second shell into four identical second cavities 22 to accommodate the multifunctional processing circuits and structures T2 of each channel, forming a second integrated ceramic packaging structure 2 with four cavities opened on one side.

[0046] Furthermore, a plurality of second signal through holes and a plurality of second grounding through holes 26 are respectively provided on the second shell 21 and the second partition rib 20. The second signal through holes are used to realize the electrical interconnection inside and outside the package of the multifunctional processing layer 2. The second signal through holes include second RF signal through holes 24 and other second non-RF signal through holes 25. The second grounding through holes 26 are arranged in an array to form a series of electromagnetic shielding partition walls to realize electromagnetic isolation between the channels. A second step 23 is provided on the opening end face of the second cavity for installing a second sealing cover plate 27 to realize independent airtight sealing. The second cover plate 27 is made of metal.

[0047] like Figure 4 As shown, the power modulation layer 3 is an integrated packaging structure with a cavity realized by low temperature co-fired ceramic (LTCC). The power modulation layer 3 includes a third shell, and an integrated third partition rib 30 is arranged inside the third shell; the third partition rib 30 is cross-shaped, and is used to separate the third shell into four identical third cavities 32 to accommodate the power modulation circuit and structure T3 of each channel, forming an integrated ceramic packaging structure 3 with four cavities opened on one side.

[0048] Furthermore, a plurality of third signal through holes and a plurality of third grounding through holes 36 are respectively provided on the third shell 31 and the third partition rib 30. The third signal through holes are used to realize electrical interconnection inside and outside the power modulation layer 3 package. The third signal through holes include third RF signal through holes 34 and other third non-RF signal through holes 35. The third grounding through holes 36 are arranged in an array to form a series of electromagnetic shielding partition walls to realize electromagnetic isolation between channels. The opening end surface of each third cavity is provided with a third step 33 for installing a third sealing cover plate 37 to realize independent airtight sealing. The third cover plate 37 is made of metal.

[0049] Furthermore, a third BGA solder ball 431 is provided on the port surface of the cavity wall of the third shell 30 and the third partition rib 31 or on the third cover plate 37 to achieve electrical interconnection and structural support inside and outside the power modulation layer 3 .

[0050] Furthermore, a second absorbing material 28 is provided on the second cover plate 27 of the second cavity 22 of the multifunctional processing layer 2 to improve the EMC of the T / R component and prevent the component from self-excitation.

[0051] Furthermore, an input / output interface 412 is provided on the surface of the power amplifier low noise layer 1 facing the antenna, and an input / output interface 432 is provided on the surface of the power modulation layer 3 facing the wave control board, so as to electrically interconnect with the antenna and the wave control board respectively.

[0052] like Figure 5As shown, the power amplifier low noise amplifier processing layer 1 includes a circuit T1; the circuit T1 includes an attenuator, a power amplifier 101, a circulator 102, a limiter 103 and a low noise amplifier 104. The circulator is a microstrip circulator.

[0053] Specifically, the circuit T1 is divided into a transmitting branch, a horizontal polarization receiving branch and a vertical polarization receiving branch; the transmitting branch includes a first attenuator, a power amplifier and a circulator; the horizontal polarization receiving branch includes a circulator, a first limiter, a first low noise amplifier and a second attenuator; the vertical polarization receiving branch includes a second limiter, a second low noise amplifier and a third attenuator; the transmitting branch and the horizontal polarization receiving branch share the same circulator.

[0054] The transmitting branch is used to receive the transmitting signal from the multifunctional processing layer 2, which is attenuated and impedance matched by the first attenuator ATT_2, amplified by the first power amplifier, and then output to the antenna through the circulator 102; the horizontal polarization receiving branch is used to receive the signal from the horizontal polarization antenna, which is processed by the circulator 102 and the first limiter, and then transmitted to the low noise amplifier 104 for amplification, and then transmitted to the multifunctional processing layer 2 after level adjustment and impedance matching by the second attenuator; the vertical polarization receiving branch is used to receive the signal from the vertical polarization antenna, which is processed by the second limiter, and then transmitted to the second low noise amplifier for amplification, and then transmitted to the multifunctional processing layer 2 after level adjustment and impedance matching by the third attenuator; the limiter 103 adopts a limiter with an anti-burning function to prevent the low noise amplifier 104 from saturation and burning; the circulator 102 is used to realize the transmit and receive isolation of the T / R component; the power amplifier 101 is used to amplify the transmitting signal to the required power level and then output it.

[0055] The multifunctional processing layer 2 includes a circuit T2; the circuit T2 includes a microwave switch 201 and a multifunctional processing part 202 for realizing amplitude and phase control; wherein the microwave switch 201 is used to realize the switching of vertical polarization and horizontal polarization channels; the multifunctional processing part 202 is used to realize the switching of the transceiver state of the T / R component. When in the transmitting state, the multifunctional processing part 202 amplifies the microwave signal received from the outside, adjusts the amplitude and phase, and sends it to the power amplifier and low noise amplifier processing layer 1; when in the receiving state, the multifunctional processing part 202 receives the microwave signal from the dual polarization switching switch, and sends it to the external circuit after amplification, amplitude and phase adjustment.

[0056] The power modulation layer 3 includes a circuit T3 of a power modulation part; the circuit T3 of the power modulation part includes a power modulation chip A, a power modulation chip B and a multifunctional driver C; the power modulation chip A and the power modulation chip B are both dual-channel independent in-phase power modulation chips; the circuit T3 of the power modulation part is used to receive three control signals TRRO, TRTO and D0 provided by the multifunctional processing part 202; wherein the control signal TRRO and the control signal TRTO are respectively connected to the two input ports of the dual-channel independent in-phase power modulation chip A, and the power modulation chip A outputs two in-phase control signals to control the transmitting amplifier and the receiving amplifier in the multifunctional processing part 202 The state of the device works when it is at a high level and does not work when it is at a low level; the control signal TRRO is respectively connected to the two input ports of the dual-path independent in-phase power modulation chip B, wherein the first routing control signal D0 enables control, and the other routing control signal D0 is inverted by the multifunctional driver C and enables control; the two output ports of the power modulation chip B respectively enable and control the low noise amplifier 104 of the vertical polarization and horizontal polarization channels; at the same time, the control signal D0 controls the switching of the dual polarization channel selection switch; the control signal TRTO outputs two complementary control signals through the multifunctional driver C to control the conduction and cutoff of the PMOS tube, and at the same time, the multifunctional driver C also outputs a negative voltage for the PA to perform gate voltage bias.

[0057] Furthermore, the three-dimensional stacked high-power multi-channel dual-polarization gas-sealed T / R assembly designed a new type of micro circulator 102 with a size of only 7.6×3.9×2.3mm 3 , which is about 1 / 3 of the volume of the current microstrip circulator. The circulator in the present invention is a microstrip circulator 102; the upper half of the cross section of the microstrip circulator 102 is trapezoidal, and the lower half is rectangular; the microstrip circulator 102 has three ports. The microstrip circulator is miniaturized by optimizing the five-port dual-polarization circulator into a three-port device and omitting the electromagnetic shielding cover on the ferrite, with a size of 7.6×3.9×2.3mm 3 At the same time, in order to adapt to the internal structure of the integrated package, a trapezoidal structure is designed.

[0058] Figure 5 The predecessor of the circuit shown is an actual circuit used in a certain key model equipment. Due to the limitations of T / R component design and process level at that time, the circuit was used as follows Figure 7 The brick-type structure based on PCB and aluminum alloy is shown, and the signal flow direction of the structure is 68.1mm long. Since the installation direction of the T / R component is perpendicular to the antenna array, its significant disadvantage is that the thickness of the entire active phased array array is very high.

[0059] For active phased arrays, once the system specifications are determined, the spacing between array elements (i.e., the dimensions in the x and y planes) is fixed. The only way to achieve system miniaturization is to achieve a low profile of the T / R component, that is, to reduce the size of the T / R component in the signal flow direction (i.e., the Z direction), that is, the height. The idea of ​​the present invention is to propose a chip T / R component in this application context, and to implement the original function in the chip T / R component. Figure 8 As shown, the nominal height of the actual chip T / R assembly realized by the present invention is 9.1 mm, which is only about 13% of the original product. Detailed product photos are as follows Figure 8 to Figure 11 shown.

[0060] The difficulty in realizing the three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly described in the present invention is:

[0061] (1) The functions are complex, including receiving dual polarization, and more integrated circuits are required.

[0062] (2) The output power is large, ≥7W / channel, and large-sized devices such as integrated circulators need to be integrated. At the same time, the heat dissipation of the product needs to be given special consideration.

[0063] (3) Small size, only 13% of the original size.

[0064] (4) Working in the Ku band with high frequency, it has high requirements on the electromagnetic compatibility and transmission loss of the product.

[0065] The present invention will Figure 5 The circuit shown is divided into three categories according to the differences in circuit functions and signal characteristics, namely, the power modulation part, the multifunctional processing part and the power amplifier low noise amplifier part, and they are respectively arranged in their respective integrated packaging structures. Among them, the power modulation part mainly includes various timing control and state control function circuits of the T / R components to realize the phased array wave control function, and this part is mainly digital circuits; the multifunctional processing part mainly receives external wave control control signals to realize the amplification, channel selection, amplitude and phase control of microwave signals, etc. This part includes digital-analog hybrid circuits and microwave circuits, etc.; the power amplifier low noise amplifier part mainly realizes the amplification of the transmitted signal, the limiting and amplification of the received signal, and the isolation of the transmission and reception, etc., and this part is all microwave circuits. Taking into account various factors such as signal flow direction, number of input / output pins, and heat dissipation, the present invention arranges the above three parts in their respective packaging structures.

[0066] In the three-dimensional stacked high-power multi-channel dual-polarization gas-sealed T / R assembly described in the present invention, the multifunctional processing part is a microwave small signal processing circuit, which has more RF interfaces and more control lines, and generates less heat, so it is placed in the middle layer. The power modulation part is almost entirely control signals, and has a large number of input / output pins, and generates relatively less heat, so it is placed in the bottom layer. The power amplifier low-noise amplifier part is at one end of the signal flow. Considering factors such as power efficiency and heat treatment, it must be placed closest to the antenna and the cold plate, which is the top layer in this system.

[0067] The integrated packaging structure adopted by the present invention has the following significant features:

[0068] (1) According to the application requirements, ceramic-based integration based on LTCC or AlN HTCC process is used. Among them, the power modulation layer and the multifunctional processing layer have low heat consumption and low heat dissipation requirements. In order to reduce microwave transmission loss, the LTCC process is used, and its loss factor is 0.002 and its thermal conductivity is 2-3W / m·℃. As for the power amplifier low-noise layer, although microwave transmission loss must also be considered, the heat dissipation problem is more prominent for high-power components. Therefore, the power amplifier low-noise layer uses AlN HTCC process, and its loss factor is 0.004 and its thermal conductivity is 170-200W / m·℃.

[0069] The above combination scheme has the following advantages:

[0070] ① Both HTCC and LTCC achieve good thermal matching with the silicon chips, GaAs chips, etc. used.

[0071] ② The multifunctional processing layer and the power modulation layer are made of LTCC material. Due to its small loss factor, its transmission loss is small.

[0072] ③ The multi-functional processing layer and the power modulation layer are made of LTCC material, and the power amplifier low-noise layer adopts AlN HTCC process, which can prevent the reverse conduction of heat from the power amplifier low-noise layer, which is conducive to heat dissipation through the cold plate and antenna direction, thereby improving product reliability.

[0073] (2) In the conventional single-sided ceramic multi-cavity solution, there are restrictions on the cavity depth and cavity wall thickness, such as cavity depth ≤ 1.0mm; wall thickness ≥ 1.5mm. When there are requirements for both cavity depth and cavity wall, a metal frame is usually welded or bonded to the ceramic substrate as an integral whole. The conventional solution has the following obvious disadvantages: ① The metal frame increases the weight of the product; ② The metal frame does not have an electrical interconnection function, and an additional electrical interconnection structure is required, making the product structure more complex; ③ A welding or bonding process is required, and a new process temperature gradient needs to be introduced, increasing the process complexity. The integrated packaging structure adopted in the present invention is a single-sided opening of multiple deep cavities, the number of cavities is ≥ 4, the cavity depth is ≥ 2.9mm, and the cavity wall is very thin, with a typical value of only 0.7mm; and it adopts integrated sintering molding, the process is simple, and there is no need to introduce a new process temperature gradient.

[0074] (3) The integrated packaging structure adopted by the present invention has a three-dimensional transmission line structure for microwave signal and control signal transmission in the cavity wall, and is also provided with a grounding through-hole array for electromagnetic shielding. Therefore, the cavity wall of the present invention has the functions of electrical interconnection, electromagnetic shielding, structural support, etc. In conventional technical solutions, these three functions are realized by different structures, which is not conducive to improving the system integration.

[0075] (4) The airtightness of conventional ceramic packaging is achieved by welding a metal frame on a ceramic substrate at high temperature and then achieving airtightness through parallel seam welding and other processes. The process is complicated and requires an additional temperature gradient. The integrated packaging structure adopted by the present invention has a metallized step for airtight packaging on the cavity wall port surface. The metallized step and the metal cover plate are directly bonded using a nanosilver bonding process, which meets the grounding, electromagnetic shielding and airtightness requirements at the same time without introducing a new structure and an additional temperature gradient.

[0076] (5) In conventional packaging design, BGA balls are implanted on the ceramic packaging body. When an airtight packaging structure is required, a thicker cavity wall is required, such as 1.5 mm or thicker. Under certain external dimensions, the internal integration space of the structure is obviously compressed. Since the integrated packaging structure has many internal integrated functions, the cavity wall is thinner, and an airtight sealing step needs to be formed, resulting in insufficient space for implanting BGA balls. Therefore, part of the BGA on the overall packaging structure is implanted on the ceramic packaging structure, and part is implanted on the metal cover plate, such as Figure 2 (d) Figure 3 Obviously, the advantage of the T / R assembly of the present invention is that the internal integration space of the package is maximized, which can maximize the system integration.

[0077] (6) Conventional power modulation schemes such as Fig.12As shown in FIG. 1 , the scheme requires two single-channel in-phase power modulation chips A, two dual-channel positive and negative power modulation chips B, one high-voltage dual-channel positive and negative power modulation chip C, one negative voltage bias chip and two AND gate chips. The significant disadvantage of this scheme is that the number of chips used is too large, the logical relationship is complex, and the integration is low. The present invention reorganizes and optimizes the control truth table, and finally forms Figure 5 The circuit scheme of the T3 part in the figure. This scheme only requires two dual-channel in-phase power modulation chips and one multi-function power modulation chip, which includes one reverse power modulation, one complementary output power modulation, and one negative voltage bias. Obviously, the above design greatly simplifies the circuit structure and reduces the difficulty of system integration.

[0078] (7) The structure diagram of a conventional dual-polarization circulator is shown in Fig.13 As shown, it has 5 input / output ports, of which RP1 to RP2 are straight-through lines, and the product has large dimensions in the X, Y, and Z directions.

[0079] In the present invention, due to the use of an integrated packaging structure, the through-line function from RP1 to RP2 is directly integrated into the packaging structure using a three-dimensional transmission line structure, thereby simplifying the circulator to a device with only three ports (such as Figure 5 As shown in the figure, the circulator size is reduced, the length and insertion loss of the transmission line are reduced, and the electrical characteristics of the product are improved. At the same time, the circulator is designed into a trapezoidal structure to adapt to the inner cavity size of the integrated packaging structure. In addition, the circulator described in the present invention removes the electromagnetic shielding cover in the conventional circulator, thereby achieving height optimization.

[0080] (8) After the three functional circuit layers in the three-dimensional stacked high-power multi-channel bipolar gas-sealed T / R assembly described in the present invention are assembled and tested separately, they are stacked in sequence from bottom to top, and then reflow soldering is performed once to complete the assembly of the entire product.

[0081] The above-described embodiments are merely descriptions of preferred implementations of the present invention and are not intended to limit the scope of the present invention. Without departing from the design spirit of the present invention, various modifications and improvements made to the technical solutions of the present invention by ordinary technicians in this field should all fall within the scope of protection determined by the claims of the present invention.

Claims

1. A three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly, characterized in that: The T / R component comprises three functional circuit layers arranged in sequence from bottom to top: a power modulation layer (3), a multifunctional processing layer (2) and a power amplifier low noise layer (1); BGA solder balls (4) are used to realize electrical interconnection between the three functional circuit layers and between the T / R component and the outside; The power modulation layer (3), the multifunctional processing layer (2) and the power amplifier low noise layer (1) are all implemented as an integrated packaging structure with a cavity using LTCC or HTCC, and the integrated packaging structure comprises a shell and partition ribs arranged in the shell; the partition ribs divide the shell into a plurality of identical cavities to accommodate the circuits and structures of each channel, forming an integrated ceramic packaging structure with multiple cavities opened on a single side; a cover plate is provided at the opening of each cavity to achieve independent airtight sealing; a signal transmission structure and a grounding through hole array are provided on the cavity wall to achieve electrical interconnection and electromagnetic shielding inside and outside the package.

2. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1 is characterized in that: The partition ribs are in a cross shape or a well shape.

3. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1 is characterized in that: The signal transmission structure is used to achieve electrical interconnection and impedance matching inside and outside the package; The grounding through hole array includes a plurality of grounding through holes arranged in an array to form a plurality of electromagnetic shielding partition walls to achieve electromagnetic isolation between channels.

4. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1, characterized in that: The opening end faces of the cavities of the power amplifier low noise layer (1), the multifunctional processing layer (2) and the power modulation layer (3) are respectively provided with a metallized step for installing a sealing cover plate.

5. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1, characterized in that: The cover plate (17) is made of metal.

6. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1, characterized in that: Wave absorbing materials are provided on the cover plates in the cavities of the power amplifier low noise layer (1) and the multifunctional processing layer (2); The wave absorbing material is used to improve the EMC of the T / R component and prevent the component from self-excitation.

7. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1, characterized in that: The BGA solder balls (4) are placed on the cavity wall port surfaces of the power amplifier low-noise layer (1) and the power modulation layer (3) or on the cover plates of the power amplifier low-noise layer (1) and the multifunctional processing layer (2).

8. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1, characterized in that: The power amplifier low noise amplifier layer (1) and the power modulation layer (3) are provided with input / output interfaces for electrically interconnecting with the antenna and the wave control board respectively.

9. The three-dimensional stacked high-power multi-channel bipolarization gas-sealed T / R assembly according to claim 1, characterized in that: The power amplifier low noise amplifier processing layer (1) comprises a circuit T1; the circuit T1 comprises an attenuator, a power amplifier (101), a circulator (102), a limiter (103) and a low noise amplifier (104); The circuit T1 is divided into a transmitting branch, a horizontal polarization receiving branch and a vertical polarization receiving branch; the transmitting branch includes a first attenuator, a power amplifier and a circulator; the horizontal polarization receiving branch includes a circulator, a first limiter, a first low noise amplifier and a second attenuator; the vertical polarization receiving branch includes a second limiter, a second low noise amplifier and a third attenuator; the transmitting branch and the horizontal polarization receiving branch share the same circulator; The transmitting branch is used to receive the transmitting signal from the multifunctional processing layer (2), attenuate and impedance match the signal through the first attenuator ATT_2, amplify the signal through the first power amplifier, and output the signal to the antenna through the circulator (102); the horizontal polarization receiving branch is used to receive the signal from the horizontal polarization antenna, process the signal through the circulator (102) and the first limiter, and then transmit the signal to the low noise amplifier (104) for amplification, and then transmit the signal to the multifunctional processing layer (2) after level adjustment and impedance matching through the second attenuator; the vertical polarization receiving branch is used to receive the signal from the horizontal polarization antenna, process the signal through the circulator (102) and the first limiter, and then transmit the signal to the low noise amplifier (104) for amplification, and then transmit the signal to the multifunctional processing layer (2) after level adjustment and impedance matching through the second attenuator; The branch is used to receive the signal from the vertically polarized antenna, and after being processed by the second limiter, the signal is sent to the second low noise amplifier for amplification, and then after being level adjusted and impedance matched by the third attenuator, the signal is sent to the multifunctional processing layer (2); the limiter (103) adopts a limiter with an anti-burning function to prevent the low noise amplifier (104) from saturation and burning; the circulator (102) is used to achieve the transmission and reception isolation of the T / R component; the power amplifier (101) is used to achieve the output after amplifying the transmission signal to the required power level; The multifunctional processing layer (2) comprises a circuit T2; the circuit T2 comprises a microwave switch (201) and a multifunctional processing part (202) for realizing amplitude and phase control; wherein the microwave switch (201) is used to realize the switching between vertical polarization and horizontal polarization channels; the multifunctional processing part (202) is used to realize the switching of the receiving and transmitting state of the T / R component; when in the transmitting state, the multifunctional processing part (202) amplifies the microwave signal received from the outside, adjusts the amplitude and phase, and sends it to the power amplifier and low noise amplifier processing layer (1); when in the receiving state, the multifunctional processing part (202) receives the microwave signal from the dual polarization switching switch, amplifies it, adjusts the amplitude and phase, and sends it to the external circuit; The power modulation layer (3) includes a circuit T3 of a power modulation part; the circuit T3 of the power modulation part includes a power modulation chip A, a power modulation chip B and a multifunctional driver C; the power modulation chip A and the power modulation chip B are both dual-channel independent in-phase power modulation chips; the circuit T3 of the power modulation part is used to receive three control signals TRRO, TRTO and D0 provided by the multifunctional processing part (202); wherein the control signal TRRO and the control signal TRTO are respectively connected to the two input ports of the dual-channel independent in-phase power modulation chip A, and the power modulation chip A outputs two in-phase control signals to control the transmitting amplifier and the receiving amplifier in the multifunctional processing part (202). The state of the amplifier is that it works when it is at a high level and does not work when it is at a low level; the control signal TRRO is respectively connected to the two input ports of the dual-path independent in-phase power modulation chip B, wherein the first routing control signal D0 enables control, and the other routing control signal D0 enables control after being inverted by the multifunctional driver C; the two output ports of the power modulation chip B respectively enable and control the low noise amplifier (104) of the vertical polarization channel and the horizontal polarization channel; at the same time, the control signal D0 controls the switching of the dual polarization channel selection switch; the control signal TRTO outputs two complementary control signals through the multifunctional driver C to control the conduction and cutoff of the PMOS tube, and at the same time, the multifunctional driver C also outputs a negative voltage for the PA to perform gate voltage bias.

10. The three-dimensional stacked high-power multi-channel bipolarization hermetically sealed T / R assembly according to claim 9, characterized in that: The circulator (102) is a microstrip circulator; the upper half of the cross section of the microstrip circulator is trapezoidal, and the lower half is rectangular; the microstrip circulator has three ports.

Images